CN115732918A - FSIW millimeter wave microstrip antenna based on higher order mode - Google Patents
FSIW millimeter wave microstrip antenna based on higher order mode Download PDFInfo
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Abstract
The invention discloses an FSIW millimeter wave microstrip antenna based on a higher mode, which comprises a plurality of antenna modules distributed in a periodic array manner; each antenna module is a 2 x 2 antenna array and comprises an antenna radiation structure, two FSIW cavity structures and a Y-shaped waveguide power divider. The antenna radiation structure comprises an antenna radiation unit, a first dielectric layer and a first metal layer; the antenna radiating element comprises four metal rectangular patches. The metal rectangular patch radiates outwards as an antenna unit, a group of symmetrical coupling feed gaps are etched on two sides right below each unit, and the antenna unit is subjected to high-order mode TE 20 The use of a mold; for transmittingConducting TE 20 The FSIW cavity of the die is formed by folding the two sides inwards through ideal magnetic wall surfaces, and the plane area is reduced by nearly 33%. The antenna of the invention obtains 8.93% impedance bandwidth, sidelobe level lower than 13.4dB and maximum peak gain of 12.85dBi, and can be directly integrated with a millimeter wave radio frequency front-end circuit.
Description
Technical Field
The invention belongs to the technical field of microwave antennas, and particularly relates to an FSIW (folded substrate integrated waveguide) millimeter wave microstrip antenna based on a higher mode, which can be applied to the fields of 5G mobile communication, satellites and the like.
Background
With the continuous advance of modern wireless communication technology, the requirements for the performance and the integration level of a wireless communication system are increased, and the requirements for an antenna as a part of the system are also increased.
Substrate Integrated Waveguides (SIW) have been widely studied and used in the field of microwave devices such as filters, phase shifters, couplers, power splitters and antennas due to their low loss, low profile and easy processing. However, the size of the traditional SIW is large, and the requirement of the existing microwave circuit for miniaturization is generally difficult to meet, while the half-module SIW (HSIW) can obtain a considerable miniaturization effect close to half of the original area in the plane size, and has a relatively similar effect in the aspect of transmission performance, but because one side is in an open state, the energy leakage is relatively large, and the antenna radiation structure is not favorable for building on a non-open end.
On the other hand, the high-order mode antenna is widely used for improving the gain of the antenna, the microstrip antenna is convenient to process and easy to integrate with a planar circuit, and has the advantages of small volume, low profile, low cost and the like; the microstrip antenna using higher harmonic radiation enlarges the size of the resonance unit, improves the unit gain, can reduce the feed network required by realizing high gain, and can also reduce the processing difficulty. The substrate integrated waveguide is applied to the high-order mode microstrip antenna, so that the anti-interference capability of the antenna can be effectively improved. However, when the substrate integrated waveguide is used for antenna array combination, the problem that the antenna unit spacing of the higher mode is far and the side lobe level is high is caused by the large size.
Aiming at the problems, the invention provides a microstrip antenna array based on a folded substrate integrated waveguide of a higher-order mode, which realizes the folding of the higher-order mode by using FSIW under the higher-order mode, realizes the area size reduction of more than 33 percent, has the impedance bandwidth of 8.93 percent as a narrow-band antenna, has the maximum peak gain of 12.85dBi, and ensures that the space between antenna units is close to each other through the area reduction so as to reduce the high side lobe level of the antenna, wherein the peak value of the highest side lobe level is lower than 13.4dB.
Disclosure of Invention
The invention aims to solve the problems that the traditional SIW is large in size and high sidelobe level exists in an antenna applying an SIW structure, and provides an FSIW millimeter wave microstrip antenna based on a higher-order mode.
The invention adopts the following technical scheme:
a folded substrate integrated waveguide millimeter wave microstrip antenna based on a higher order mode comprises a plurality of antenna modules distributed in a periodic array; wherein the content of the first and second substances,
each antenna module is a 2 x 2 antenna array and comprises an antenna radiation structure, two FSIW cavity structures and a Y-shaped waveguide power divider;
the antenna radiation structure comprises an antenna radiation unit, a first dielectric layer (2) and a first metal layer (3);
the antenna radiation unit comprises four metal rectangular patches (1) which have the same size and are distributed in a 2 x 2 array, and gaps exist among the four metal rectangular patches (1);
the first metal layer (3) is etched with four pairs of coupling feed gap pairs (8) corresponding to the metal rectangular patches (1), namely, the projections of the four pairs of coupling feed gap pairs (8) on the antenna radiation unit respectively fall on the four metal rectangular patches (1); the center of each metal rectangular patch (1) is aligned with the center of the corresponding coupling feed gap pair (8);
the coupling feed gap pair (8) is arranged in axial symmetry with respect to the axis of the first dielectric layer (2) in the long side direction (namely Y axis);
preferably, the number of the metal rectangular patches (1) distributed along the short side direction (namely, X axis) of the rectangular coupling slot (10) of the antenna radiation unit is the same as the number of the metal rectangular patches (1) distributed along the long side direction (namely, Y axis) of the rectangular coupling slot (10).
Preferably, the distance M _ X between adjacent metal rectangular patches (1) along the short side direction (i.e. X axis) of the rectangular coupling slot (10) is 0.5 lambda 0 ～λ 0 More preferably 0.56 lambda 0 (ii) a Between adjacent metal rectangular patches (1) along the long side direction (Y axis) of the rectangular coupling gap (10)Distance M _ y is 0.5 lambda 0 ～λ 0 More preferably 0.65 lambda 0 Wherein λ is 0 A wavelength corresponding to 28GHz in free space;
preferably, the metal rectangular patch (1) has a width W p Satisfies 0.28 lambda 0 Length L of p Satisfies 0.20 lambda 0 Regulating and controlling the radiation of the antenna in a millimeter wave frequency band;
preferably, the width of the coupling feed gap pair (8) after optimization is W s The length Ls satisfies 0.19 lambda 0 ；
The two FSIW cavity structures are arranged axisymmetrically with respect to a Y-axis of the antenna module; each FSIW cavity structure comprises a first metal layer (3), a second dielectric layer (4), a second metal layer (5), a middle metal plate arranged in the middle layer of the second dielectric layer (4), a first metalized through hole array (9 a) penetrating through the second dielectric layer (4) and a second metalized blind hole array (9 d);
preferably, the distance between the centers of the two FSIW cavities is the same as the distance between the two metal rectangular patches (1) in the X-axis direction;
the second metallized blind hole array (9 d) forms an FSIW cavity electric wall formed by folding and overlapping electric walls on two sides of the SIW;
the first metalized through hole array (9 a) forms two long-side metal walls and two short-circuit metal walls which are formed by folding and sealing the magnetic wall of the SIW to form an FSIW cavity;
the middle metal layer (9 b) is formed by folding surfaces of SIW, two short-circuit metal walls surrounded by the first metalized through hole array (9 a) penetrate through the middle metal layer (9 b), wherein the length of the long edge of the middle metal layer (9 b) is longer than that of the long-edge metal walls on two sides surrounded by the first metalized through hole array (9 a), so that unnecessary energy leakage of a part, contacted with the short-circuit end of the middle metal layer (9 b), of the first metalized through hole array (9 a) is prevented, the structure edge is close to, the middle metal layer (9 b) extending out of the short edge of the first metalized through hole array (9 a) does not need to be designed in other length, and processing is facilitated;
the long-side metal walls on the two sides of the FSIW cavity are not in contact with the middle metal layer (9 b);
the second metal layer (5) is etched with 2 rectangular coupling gaps (10) which are respectively positioned right below the second metallized blind hole array (9 d);
the FSIW cavity has a length L siw Width W siw ；
Preferably, the diameters of the through holes of the first metallized through hole array (9 a) and the second metallized blind hole array (9 d) are the same;
preferably, the antenna also comprises an edge center metal perturbation column (9 c) for connecting the middle metal layer (9 b) and the first metal layer (3), and a radiation matching metal perturbation column (9 e) for connecting the middle metal layer (9 b) and the second metal layer (5), wherein the edge center metal perturbation column is respectively used for bisecting the higher-order mode and the antenna radiation matching;
preferably, the adjustment of the working bandwidth is realized by adjusting and controlling the electric inter-wall distance Xm formed by the edge center metal perturbation column (9 c) and the second metallized blind hole array (9 d) and the electric inter-wall distance Xs formed by the radiation matching metal perturbation column (9 e) and the second metallized blind hole array (9 d).
Preferably, the length L of the rectangular coupling slot (10) s1 For FSIW waveguide wavelength lambda g Is one fourth of (1), ensures a coupled resonance, and has a width W s1 Should be as small as possible;
the Y-shaped waveguide power divider adopts a one-to-two power divider; the Y-shaped waveguide power divider adopts a one-to-two power divider; projections of the two rectangular coupling gaps (10) on the Y-shaped waveguide power divider are respectively positioned in two paths equally divided by the Y-shaped waveguide power divider;
preferably, the Y-shaped waveguide power divider comprises a second metal layer (5), a third dielectric layer (6), a third metal layer (7), a third metalized through hole array penetrating through the third dielectric layer (6), a coupling matching metal perturbation column (11 a), a refraction perturbation column (11 b) and a central metal perturbation column (11 c);
the coupling matching metal perturbation column (11 a) and the rectangular coupling gap (10) are used for coupling energy from the Y-shaped waveguide power divider into the two FSIW cavities; a central metal perturbation column (11 c) for equally dividing the energy of the input signalIs arranged at the branch position of the Y shape and adjusts and controls the distance D between the central metal perturbation column (11 c) and the input port xv3 Coupling the divided energy to the refraction perturbation columns (11 b) at the corners, and coupling the divided energy to the rectangular coupling gaps (10) at 90 degrees;
preferably, the aperture of the coupling matching metal perturbation column (11 a), the aperture of the refraction perturbation column (11 b) and the aperture of the central metal perturbation column (11 c) are the same as the aperture of the first metallized through hole array (9 a);
preferably, the thicknesses of the first dielectric layer (2) and the third dielectric layer (6) are the same, and the thickness of the second dielectric layer (4) is the sum of the thicknesses of the first dielectric layer (2) and the third dielectric layer (6).
The working principle is as follows:
input electric field at input end is TE 10 The mode signal is divided into two paths of equally divided half-power signals by a central metal perturbation column (11 c) in the Y-shaped waveguide power divider in equal division, the signals are refracted to the short-circuit ends at the two ends of the Y-shaped waveguide under the perturbation action of a refraction perturbation column (11 b), and the signal route is similar to a Y shape;
the half-power signals at the two ends are coupled into the FSIW cavity structure under the action of a coupling matching metal perturbation column (11 a) and a rectangular coupling gap (10) at the short-circuit end of the Y-shaped waveguide;
when designing the FSIW cavity structure, a suitable width should be selected according to the designed frequency band, and the formula is as follows:
wherein, C o Denotes the speed of light, d denotes the diameter of the via, s denotes the pitch of the via, f c (TE) 20 Represents TE 20 The cutoff frequency of the mode;
because the widths of the metal through hole wall, namely the width of the second metallized blind hole array (9 d) and the widths of the upper layer and the lower layer of FSIW are not equal after the SIW is folded, the width of the metal through hole wall is equal to that of the lower layer, and the width of the metal through hole wall is equal to that of the upper layer and the width of the lower layer of FSIW by using an introduced correction term delta:
selecting proper folding gap width W according to the value of the correction term f ；
The length L of the rectangular coupling slot (10) s1 According to substantially the waveguide wavelength lambda g One fourth of (a);
where λ represents the wavelength in free space of the center frequency of the selected millimeter wave band, λ c Represents the cutoff frequency of FSIW;
electric field TE of signal 10 The mode passes through the coupling action of the rectangular coupling gap (10) to generate TE with opposite phases on the two sides of the long side of the rectangular coupling gap (10) 20 A high-order mode electric field is modeled, then a side central metal perturbation column (9 c) is introduced to expand the frequency bandwidth, and the center of the upper layer and the center of the lower layer of the FSIW are respectively moved along the X-axis direction to perform electromagnetic simulation so as to obtain the position with the optimal performance, wherein the position is positioned on the upper layer of the FSIW and is away from the second metallized blind hole array (9 d) in the X-axis direction s ；
Finally, TE 20 Under the matching action of the electric field on the radiation matching metal perturbation column at the lower layer of the FSIW cavity, a radiation field source is formed at the coupling feed gap pair (8); TE 20 The two electric fields of the mode have opposite phases, act on the rectangular coupling gap (10) in the two folded FSIW cavities, generate the same radiation field source and couple the radiation field source to the metal rectangular patch (1), generate currents in the same direction, superpose the currents, and enhance the outward radiation energy of the metal rectangular patch (1).
The invention has the following beneficial effects:
(1) The invention provides the folding substrate integrated waveguide in the field of antennas for the first time, and realizes the size reduction of more than 33% in a plane effect, thereby achieving the miniaturization effect; the antenna of the invention obtains 8.93% impedance bandwidth, sidelobe level lower than 13.4dB and maximum peak gain of 12.85dBi, and can be directly integrated with a millimeter wave radio frequency front-end circuit.
(2) The antenna array units are arranged at similar longitudinal and transverse distances, have good directivity and have lower side lobe levels;
(3) The antenna array input end of the invention adopts single-mode excitation, and the structure generates a high-order mode to radiate the patch antenna unit, thereby effectively avoiding a complex input end high-order mode excitation mode.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional layered structure of an antenna array of the present invention;
FIG. 2 is a plan view of the various layer structures of the present invention: a radiation plan view, (b) an antenna feed structure plan view, (c) an FSIW cavity upper layer plan view, (d) an FSIW cavity lower layer plan view, (e) an FSIW cavity cross-sectional view, (f) an FSIW cavity feed structure plan view, and (g) a Y-type waveguide power divider plan view;
fig. 3 is a reflection coefficient and gain curve for an antenna array of the present invention;
FIG. 4 is a voltage standing wave ratio of the antenna array of the present invention;
fig. 5 is the radiation efficiency of the antenna array of the present invention;
fig. 6 is the E-plane and H-plane radiation patterns of the inventive antenna array at (a) 28GHz, (b) 29GHz, (c) 30GHz, and (d) maximum peak gain frequency 29.3GHz, respectively.
The mark in the figure is: the device comprises a metal rectangular patch 1, a first dielectric layer 2, a first metal layer 3, a second dielectric layer 4, a second metal layer 5, a third dielectric layer 6, a third metal layer 7, a coupling feed gap pair 8, a first metalized through hole array 9a, a middle metal layer 9b, a side center metal perturbation column 9c, a second metalized blind hole array 9d, a radiation matching metal perturbation column 9e, a rectangular coupling gap 10, a coupling matching metal perturbation column 11a, a refraction perturbation column 11b and a center metal perturbation column 11c.
Detailed Description
The implementation of the present invention is further illustrated below with reference to the accompanying drawings:
fig. 1 is a schematic diagram of a three-dimensional layered structure of an antenna array, and the 2 × 2 rectangular patch antenna array of a folded substrate integrated waveguide based on a higher order mode provided by the invention sequentially comprises a metal rectangular patch 1, a first dielectric layer 2, a first metal layer 3, a second dielectric layer 4 and an embedded layer from top to bottomIn the FSIW cavity of the second dielectric layer 4, the middle metal layer 9b, the first metalized through hole array 9a, the middle metal layer 9b, the edge center metal perturbation column 9c, the second metalized blind hole array 9d, the radiation matching metal perturbation column 9e, the second metal layer 5, the third dielectric layer 6 and the lowest third metal layer 7 are arranged, the dielectric layers are made of Rogers RT/dual 4003 (tm) with the dielectric constant of 3.55, and the metal layers are made of copper. The metal rectangular patches 1 are periodically arranged to form a 2 x 2 array, the energy of the input end is equally divided by a central metal perturbation column 11c, and then is matched and coupled into the FSIW cavity structure by a refraction metal perturbation column 11b, a coupling matching metal perturbation column 11a and a rectangular coupling gap 10 to form the feed process from the power divider to the cavity; the energy entering the cavity forms TE due to the coupling feed mode of the rectangular coupling gap 10 and the separation effect of the edge center perturbation metal column 9c on the energy 10 Mode to TE 20 Transformation of the mould; the higher order mode electric field passing through the FSIW cavity then acts as a feed source for the antenna array via the radiation field source generated by the coupled feed slot pair 8.
Fig. 2 is a plan view of the structure of each layer of the antenna array: fig. 2 (a) is a radiation plan view, fig. 2 (b) is a plan view of an antenna feed structure, fig. 2 (c) is a plan view of an upper FSIW cavity layer, fig. 2 (d) is a plan view of a lower FSIW cavity layer, fig. 2 (e) is a cross-sectional view of an FSIW cavity structure, fig. 2 (f) is a plan view of an FSIW cavity feed structure, and fig. 2 (g) is a plan view of a Y-type waveguide power divider.
As shown in fig. 2 (a), the length and width of the microstrip rectangular patch are L p 、W p The distance between the patch units on the X axis is M _ X, and the distance between the patch units on the Y axis is M _ Y;
as shown in fig. 2 (b), each rectangular slot of the pair of coupled feed slots 8a, 8b, 8c, 8d has a length L s Width is W s And the center of the metal rectangular patch 1 is offset by a distance X slot ；
FIG. 2 (e) is a diagram of the FSIW chamber structure, which together with FIGS. 2 (c) and (d) illustrates the internal dimensions of the structure, wherein the width is W siw Length L of siw 9a is the metallized via array outside the cavity, 9d is the metallized via array inside,9b is an inner metal plate with a folding gap width W f The edge center metal perturbation column 9c and the radiation matching metal perturbation column 9e are respectively used for bisecting the higher order mode and antenna radiation matching, wherein Y is s 、X s The offset position of the edge center metal perturbation column 9e relative to the metallized through hole array 9a and the rectangular coupling gap 10 on the outer side of the cavity body;
FIG. 2 (f) shows the coupling slot of the energy Y waveguide into the FSIW cavity, where the length is L s1 Width of W s1 ；
In FIG. 2 (g), the metal posts 11c are located in the middle of the whole structure and have the function of dividing the electric field equally, the electric field is refracted by the refractive metal perturbation posts 11b, and then matched by the coupling matching metal perturbation posts 11a, and the electric field energy is coupled into the FSIW cavity, wherein the relative position of the coupling matching metal perturbation posts 11a to the short-circuit metal wall is V along the Y-axis y A distance V in the X-axis direction x The diameter of the central metal perturbation column 11c is D v3 The diameters of the coupling matching metal perturbation column 11a and the refraction metal perturbation column 11b are respectively D v1 、D v2 The position of the refractive metal perturbation column 11b relative to the central metal perturbation column 11c is D along the X axis x Along the Y-axis of D y The diameter of the metal column of the peripheral metal wall is D v The pitch is s.
The specific dimensions for each label are shown in the following table (unit: mm):
| L p | W p | M_x | M_y | L s | W s | X slot | Y s | X s | X m | s |
| 3 | 2.1 | 6 | 7 | 2 | 0.25 | 0.8 | 3.1 | 1.65 | 1.65 | 0.7 |
| L siw | W siw | W 1 | L s1 | W s1 | Y s1 | X s1 | W f | D v | D v3 | D xv3 |
| 13.2 | 4.4 | 3.6 | 3.2 | 0.4 | 1.9 | 2.2 | 0.15 | 0.4 | 0.5 | 4 |
fig. 3 is a reflection coefficient and gain curve of the antenna array of the present invention, which can be seen to have good reflection coefficient, and | S of the antenna array can be seen from the figure 11 |<10dB, the impedance bandwidth is 27.76-30.26GHz, the relative bandwidth is 8.93%, the millimeter wave antenna belongs to a narrow-band antenna, the gain of the antenna array is also high, and the maximum peak gain reaches 12.85dBi.
Fig. 4 is a graph of the voltage standing wave ratio of the antenna array of the present invention, which can be seen to be less than 1.5 throughout its operating bandwidth.
Fig. 5 shows the radiation efficiency of the antenna array of the present invention, which is seen to be above 70% in the operating bandwidth, for a narrow-band antenna array, the radiation efficiency is at a relatively normal level, and the narrow band is relatively sensitive to frequency, and it can be seen that outside the operating bandwidth, the efficiency is attenuated more severely.
Fig. 6 is a radiation pattern for the frequency 29.3GHz at frequencies (a) 28GHz, (b) 29GHz, (c) 30GHz, and (d) maximum peak gain, respectively, for a 2 x 2 array of higher-order mode-based FSIW millimeter wave microstrip antennas of the present invention. It can be seen from the figure that the antenna array designed by the invention has better directivity, and the highest sidelobe level is below-13.4 dB.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (10)
1. The FSIW millimeter wave microstrip antenna based on the higher mode comprises a plurality of antenna modules distributed in a periodic array; the antenna is characterized in that each antenna module is a 2 x 2 antenna array and comprises an antenna radiation structure, two FSIW cavity structures and a Y-shaped waveguide power divider;
the antenna radiation structure comprises an antenna radiation unit, a first dielectric layer (2) and a first metal layer (3);
the antenna radiation unit comprises four metal rectangular patches (1) which have the same size and are distributed in a 2 x 2 array, and gaps exist among the four metal rectangular patches (1);
four pairs of coupling feed gap pairs (8) corresponding to the metal rectangular patch (1) are etched on the first metal layer (3); the center of each metal rectangular patch (1) is aligned with the center of the corresponding coupling feed gap pair (8);
the coupling feed gap pair (8) is arranged in axial symmetry around the long side direction axis of the first dielectric layer (2);
the two FSIW cavity structures are arranged in an axial symmetry mode relative to the long side direction of the rectangular coupling slot (10) of the antenna module; each FSIW cavity structure comprises a first metal layer (3), a second dielectric layer (4), a second metal layer (5), a middle metal plate arranged in the middle layer of the second dielectric layer (4), a first metalized through hole array (9 a) penetrating through the second dielectric layer (4) and a second metalized blind hole array (9 d);
the second metallized blind hole array (9 d) forms an FSIW cavity electric wall formed by folding and overlapping electric walls on two sides of the SIW;
the first metalized through hole array (9 a) forms two long-side metal walls and two short-circuit metal walls which are formed by folding and sealing the magnetic wall of the SIW to form an FSIW cavity;
the middle metal layer (9 b) is formed by folding surfaces of SIW, two short-circuit metal walls surrounded by the first metalized through hole array (9 a) penetrate through the middle metal layer (9 b), and the length of the long side of the middle metal layer (9 b) is longer than that of the long side metal walls surrounded by the first metalized through hole array (9 a);
the long-side metal walls on the two sides of the FSIW cavity are not in contact with the middle metal layer (9 b);
the second metal layer (5) is etched with 2 rectangular coupling gaps (10) which are respectively positioned right below the second metallized blind hole array (9 d);
the Y-shaped waveguide power divider adopts a one-to-two power divider; projections of the two rectangular coupling gaps (10) on the Y-shaped waveguide power divider are respectively positioned in two paths equally divided by the Y-shaped waveguide power divider.
2. The FSIW millimeter wave microstrip antenna based on a higher mode according to claim 1, characterized in that the distance M _ x between adjacent metal rectangular patches (1) along the short side of the rectangular coupling slot (10) is 0.5 λ 0 ～λ 0 The distance M _ y between adjacent metal rectangular patches (1) along the long side direction of the rectangular coupling gap (10) is 0.5 lambda 0 ～λ 0 Wherein λ is 0 Which is the corresponding wavelength in free space at 28 GHz.
3. The FSIW millimeter wave microstrip antenna based on higher order modes according to claim 1, characterized in that the metal rectangular patch (1) has a width W p Satisfies 0.28 lambda 0 Length L of p Satisfies 0.20 lambda 0 And the radiation of the antenna is regulated and controlled in a millimeter wave frequency band.
4. An FSIW millimeter wave microstrip antenna based on a higher mode according to claim 1 characterized in that the distance between the centers of the two FSIW cavities is the same as the distance between the two metal rectangular patches (1) along the short side of the rectangular coupling slot (10).
5. The FSIW millimeter wave microstrip antenna based on higher order mode of claim 1 further comprising a center metal perturbation column (9 c) for connecting the middle metal layer (9 b) with the first metal layer (3), a radiation matching metal perturbation column (9 e) for connecting the middle metal layer (9 b) with the second metal layer (5) for bisecting the higher order mode and the antenna radiation matching, respectively.
6. The FSIW millimeter wave microstrip antenna based on the higher mode according to claim 1, wherein the electrical inter-wall distance X is formed by adjusting and controlling the edge center metal perturbation column (9 c) and the second metallized blind hole array (9 d) m And the distance X between the electric walls formed by the radiation matching metal perturbation column (9 e) and the second metallized blind hole array (9 d) s And the adjustment of the working bandwidth is realized.
7. The FSIW millimeter wave microstrip antenna according to claim 1, wherein the rectangular coupling slot (10) has a length L s1 For FSIW waveguide wavelength lambda g Is one fourth of (1), ensures a coupled resonance, and has a width W s1 Should be as small as possible.
8. The FSIW millimeter wave microstrip antenna based on a higher mode according to claim 1, characterized in that the Y-shaped waveguide power divider comprises a second metal layer (5), a third dielectric layer (6), a third metal layer (7), a third metalized via array penetrating through the third dielectric layer (6), and a coupling matching metal perturbation column (11 a), a refraction perturbation column (11 b) and a central metal perturbation column (11 c);
the coupling matching metal perturbation column (11 a) and the rectangular coupling gap (10) are used for coupling energy from the Y-shaped waveguide power divider into the two FSIW cavities; the central metal perturbation column (11 c) for equally dividing the input signal energy is placed at the bifurcation position of the Y shape, and the distance D between the central metal perturbation column (11 c) and the input port is regulated and controlled xv3 The halved energy is coupled to the refraction perturbation column (11 b) and then coupled to the rectangular coupling slit (10) by 90 degrees.
9. The higher-order mode-based FSIW millimeter wave microstrip antenna according to claim 1, characterized in that the apertures of the coupling matching metal perturbation column (11 a), the refraction perturbation column (11 b), the central metal perturbation column (11 c), the first metalized through-hole array (9 a) and the second metalized blind-hole array (9 d) are the same.
10. The FSIW millimeter wave microstrip antenna based on higher order mode of claim 8 wherein:
input electric field at input end is TE 10 The signal of the mode is divided into two paths of equally divided half-power signals by the Y-shaped waveguide power divider; half-power signals at two ends are coupled to the two FSIW cavities under the action of the rectangular coupling gap (10);
the FSIW cavity selects a proper width according to the designed frequency band, and the formula is as follows:
wherein, C o Representing the speed of light, d the diameter of the via, s the pitch of the via, f c (TE) 20 Represents TE 20 The cutoff frequency of the mode;
because the widths of the second metallized blind hole array (9 d) and the widths of the upper layer and the lower layer of FSIW are not equal after folding SIW, a correction term delta is introduced:
the correction term is used as a reference, and the width W of the folding gap is selected f ；
According to the wave length λ of the waveguide g As the length L of the rectangular coupling slot (10) s1 ；
Wherein λ represents the center frequency of the selected millimeter wave band in free spaceWavelength of (a) c Representing the cut-off frequency of the FSIW;
electric field TE of signal 10 The mode passes through the coupling action of the rectangular coupling gap (10) to generate TE with opposite phases on the two sides of the long side of the rectangular coupling gap (10) 20 A high-order mode electric field is modeled, then an edge center metal perturbation column (9 c) is introduced, the frequency bandwidth is expanded, the center of the upper layer and the center of the lower layer of the FSIW are respectively moved along the direction of the short side of the rectangular coupling gap (10) to carry out electromagnetic simulation, and the position with the optimal performance is obtained and is positioned on the upper layer of the FSIW and is far away from a second metallized blind hole array (9 d) along the direction X of the short side of the rectangular coupling gap (10) s ；
Finally, TE 20 Under the matching action of the radiation matching metal perturbation column (9 e) at the lower layer of the FSIW cavity, a radiation field source is formed at the coupling feed gap pair (8) by the electric field; TE (TE) 20 The two electric fields of the mode have opposite phases, act on the rectangular coupling gap (10) in the two folded FSIW cavities, generate the same radiation field source and couple the radiation field source to the metal rectangular patch (1), generate currents in the same direction, superpose the currents, and enhance the outward radiation energy of the metal rectangular patch (1).
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| CN202211503634.XA Pending CN115732918A (en) | 2022-11-28 | 2022-11-28 | FSIW millimeter wave microstrip antenna based on higher order mode |
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| CN (1) | CN115732918A (en) |
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2022
- 2022-11-28 CN CN202211503634.XA patent/CN115732918A/en active Pending
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