CN115732302A

CN115732302A - Process method for maintaining spare parts of ECCP (electron cyclotron resonance plasma) dry plasma etching equipment in Chamber WALL (wafer-to-wafer level)

Info

Publication number: CN115732302A
Application number: CN202210849394.2A
Authority: CN
Inventors: 于辉; 熊志红; 朱峰
Original assignee: Hubei Shishang Electronic Technology Co ltd
Current assignee: Hubei Shishang Electronic Technology Co ltd
Priority date: 2022-07-19
Filing date: 2022-07-19
Publication date: 2023-03-03

Abstract

The invention relates to the technical field of etching, in particular to a process method for maintaining a spare part Chamber WALL of ECCP dry plasma etching equipment, which comprises the following steps: the method comprises the steps of dry ice decontamination, chemical leg membrane coating, grinding, chemical polishing, anodic oxidation, ultrapure water hole sealing, cleaning, drying and vacuum packaging. And the practice shows that the product performance is better.

Description

Process method for maintaining spare parts of ECCP (electron cyclotron resonance plasma) dry plasma etching equipment in Chamber WALL (wafer-to-wafer level)

Technical Field

The invention relates to the technical field of etching, in particular to a process method for maintaining a spare part Chamber WALL of ECCP dry plasma etching equipment.

Background

The plasma etcher is also called a plasma etcher, a plasma plane etcher, a plasma surface treatment instrument, a plasma cleaning system and the like.

In the structure of the plasma etcher, a quartz component directly contacts with plasma and is closely related to the state of a reaction chamber, the roughness of the surface of the quartz component is aggravated along with the increase of the etching reaction times, and the quartz component needs to be maintained when the roughness reaches a certain degree.

Disclosure of Invention

The invention aims to solve the defects in the background technology, and provides a process method for maintaining a spare part Chamber WALL of ECCP dry plasma etching equipment, which comprises the following process flows: dry ice decontamination, chemical leg membrane, grinding, chemical polishing, anodic oxidation, ultra-pure water hole sealing, cleaning, drying and vacuum packaging.

Preferably, the dry ice decontamination adopts a dry ice machine, the CDA pressure is 0.3-0.5 mp, and Ra is more than or equal to 0.5 mu m and less than or equal to 1.0 mu m.

Preferably, the chemical leg membrane is circulated by a 20-micron filter at 50 ℃ by using 10% sodium hydroxide, and is stirred by a high-pressure fan.

Preferably, the grinding is carried out by using 80#,120#,180#,320#,500#,800# alumina sand paper, and the roughness is less than 0.5 μm.

Preferably, the polishing guarantee smooth finish is more than 700GU.

Preferably, oxalic acid 30g/L, sulfuric acid 120g/L, tartaric acid 10g/L, huang Ji salicylic acid 5g/L are used for anodic oxidation.

Preferably, the number of the dust particles with the diameter of 1.0 μm is less than or equal to 1, the number of the dust particles with the diameter of 0.5 μm is less than or equal to 5, and the number of the dust particles with the diameter of 0.3 μm is less than or equal to 10 after cleaning and drying.

Preferably, the vacuum packaging ensures that the vacuum degree of the product is less than or equal to 1 x 10 < -3 > torr.

Compared with the prior art, the invention has the following beneficial effects:

the maintenance method adopted by the invention has the advantages that the waste water generated by the anode treatment process is inorganic acid and alkali liquor cleaning water, no pollutants such as heavy metals and organic coloring agents are contained, the process is clean and environment-friendly, and the process is simple and easy to implement. Practice shows that the voltage resistance value of the obtained product is about 1200V originally and about 2000V at present; the roughness is about 1.2 mu m originally and is below 0.8 mu m at present; the film thickness is required to be more than 70 mu m originally, can be 50-60 mu m at present, and can save about 20 percent of electric energy.

Detailed Description

The following description is provided to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments described below are by way of example only, and other obvious variations will occur to those skilled in the art.

A process method for maintaining a Chamber WALL of ECCP dry plasma etching equipment spare parts comprises the following process flows:

s1, dry ice decontamination, wherein a dry ice machine is adopted for dry ice decontamination, and the set parameters are that the CDA pressure is 0.3-0.5 mp, and Ra is more than or equal to 0.5 mu m and less than or equal to 1.0 mu m.

S2, heating the chemical leg membrane to 50 ℃ by adopting a 10% sodium hydroxide solution, soaking the workpiece in the chemical leg membrane to remove an oxide layer on the surface, circulating the solution by adopting a 20-micron filter, and stirring by adopting a high-pressure fan.

And S3, grinding, wherein the grinding adopts 80#,120#,180#,320#,500#,800# alumina sand paper for grinding, and the roughness is less than 0.5 mu m.

S4, polishing, namely heating the workpiece to 50 ℃ by adopting a dilute solution mixed by sulfuric acid and phosphoric acid, soaking the workpiece in the dilute solution, and performing chemical polishing to reduce the roughness of the workpiece, wherein the polishing guarantees that the finish degree is more than 700GU. The conventional oxidation process requires high surface brightness, so that high-concentration high-temperature three-acid polishing or two-acid polishing is required for chemical polishing; the process mainly treats metal impurities on the surface of a workpiece and needs 10% of low-concentration two-acid chemical grinding.

S5, anodizing, wherein oxalic acid is 30g/L, sulfuric acid is 120g/L, tartaric acid is 10g/L, huang Ji salicylic acid is 5g/L, the temperature is kept at minus 2-0 ℃, and the workpiece is electrified to enable a layer of oxide film to grow on the surface of the workpiece. The process of the application has one more oxalic acid system for oxidation; the oxidation temperature of the conventional process is about 20 ℃, the oxidation process in the application belongs to hard oxidation, and the oxidation temperature is below-2 ℃.

S6, sealing holes with ultrapure water, namely cleaning residual sulfuric acid on the surface of the workpiece by using ultrapure water at normal temperature, preheating the workpiece by using ultrapure water at 50 ℃, and finally sealing the holes in the anode film by using ultrapure water boiling water at 100 ℃. The conventional process has a dyeing procedure for treatment, and the process has no dyeing procedure, so that the pollution of a dyeing agent for treating wastewater to water quality is greatly reduced; the conventional process generally uses nickel salt to seal holes, and the process disclosed by the application uses pure water to boil and seal holes, so that the pollution of heavy metals to water quality is reduced

And S6, cleaning, manually spraying pure water to the surface of the workpiece by using a handheld polishing machine to polish, so that the roughness is reduced, and no dust is generated.

S7, drying, namely drying the water stain on the surface of the workpiece by adopting dry compressed air, then placing the workpiece in an oven, baking for 1 hour at 80 ℃, and cleaning and drying the workpiece to ensure that the number of dust particles on the surface of the workpiece is less than or equal to 1, the number of dust particles with the diameter of 0.5 mu m is less than or equal to 5 and the number of dust particles with the diameter of 0.3 mu m is less than or equal to 10.

And S8, vacuum packaging, wherein the workpiece is packaged in a dust-free room by adopting a double-layer vacuumizing PE material. Vacuum packaging ensures that the vacuum degree of the product is less than or equal to 1 x 10 < -3 > torr.

Therefore, the wastewater generated by the anodic treatment process of the company is inorganic acid and alkali cleaning water, does not contain pollutants such as heavy metals, organic coloring agents and the like, and belongs to a new environment-friendly anodic oxidation process.

Practical application shows that the voltage resistance value of the obtained product is changed from about 1200V to about 2000V; the roughness is about 1.2 mu m originally and is below 0.8 mu m at present; the film thickness is required to be more than 70 mu m originally, can be 50-60 mu m at present, and can save about 20 percent of electric energy.

The foregoing shows and describes the general principles, principal features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the invention, but various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A kind of ECCP dry plasma etching apparatus spare part Chamber WALL maintenance technological method, characterized by that: the process flow comprises the following steps: dry ice decontamination, chemical leg membrane, grinding, chemical polishing, anodic oxidation, ultra-pure water hole sealing, cleaning, drying and vacuum packaging.

2. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: the dry ice decontamination adopts an ice dryer, the CDA pressure is 0.3-0.5 mp, and Ra is more than or equal to 0.5 mu m and less than or equal to 1.0 mu m.

3. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: the chemical leg membrane is made of 10% sodium hydroxide, circulated by a filter with the temperature of 50 ℃ and the diameter of 20 mu m, and stirred by a high-pressure fan.

4. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: the grinding adopts 80#,120#,180#,320#,500#,800# alumina sand paper for grinding, and the roughness is less than 0.5 μm.

5. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: the polishing ensures the smooth finish to be more than 700GU.

6. The process method for maintaining the Chamber WALL of the ECCP dry plasma etching equipment spare part, as claimed in claim 1, wherein the process method comprises the following steps: the anode oxidation adopts 30g/L of oxalic acid, 120g/L of sulfuric acid, 10g/L of tartaric acid and 5g/L of Huang Ji salicylic acid.

7. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: after cleaning and drying, the number of dust particles with the diameter of 1.0 mu m on the surface of the workpiece is less than or equal to 1, the number of dust particles with the diameter of 0.5 mu m is less than or equal to 5, and the number of dust particles with the diameter of 0.3 mu m is less than or equal to 10.

8. The process method for Chamber WALL maintenance of the ECCP dry plasma etching equipment, as claimed in claim 1, wherein: vacuum packaging ensures that the vacuum degree of the product is less than or equal to 1 x 10 < -3 > torr.