CN115728883A - Three-dimensional photoelectric packaging structure and packaging method - Google Patents

Abstract

The application provides a three-dimensional photoelectric packaging structure and a packaging method, wherein a first electrode and a second electrode are used for providing a longitudinal electric field which vertically penetrates through an electro-optical modulator for the electro-optical modulator, namely a Z-cut electrode is provided for the electro-optical modulator, compared with the method of providing an X-cut electrode and a Y-cut electrode for the electro-optical modulator, the packaging space for packaging the electro-optical modulator can be greatly reduced, the electro-optical modulator based on the Z-cut electrode is isotropic on the plane, bending and folding can be allowed, the space occupied by the three-dimensional photoelectric packaging structure is further reduced, the integration level is improved, the distance between the first electrode and the electro-optical modulator is short, light loss can be reduced, photoelectric coupling is improved, and the modulation efficiency is improved.

Description

Three-dimensional photoelectric packaging structure and packaging method

Technical Field

The invention relates to the field of semiconductors, in particular to a three-dimensional photoelectric packaging structure and a packaging method.

Background

As current semiconductor technology develops, semiconductor devices include various kinds, and have been applied to various fields, such as an electro-optical (EO) modulator in the field of optical communications. An electro-optical modulator is one of the key functional devices in an optical communication system, and can convert a driving electrical signal on an optical carrier wave and transmit the signal in an optical domain.

However, when the current electro-optical modulator is packaged, the problem of low integration level exists, and the requirement of practical application cannot be met.

Disclosure of Invention

In view of this, an object of the present invention is to provide a three-dimensional photoelectric package structure and a packaging method, which can improve the integration level and meet the requirements of practical applications.

The embodiment of the application provides a three-dimensional photoelectric packaging structure, three-dimensional photoelectric packaging structure includes:

a package substrate and an electrical chip disposed on one side of the package substrate;

the first electrode is arranged on one side, far away from the packaging substrate, of the electric chip;

the electro-optical modulator is arranged on one side, away from the packaging substrate, of the first electrode, and the electro-optical modulator and the electric chip are electrically connected through the first electrode;

the second electrode is arranged on one side of the electro-optical modulator far away from the packaging substrate; the first electrode and the second electrode are used for providing an electric field for the electro-optical modulator to perform electro-optical modulation.

Optionally, the electro-optical modulator includes a heterogeneous waveguide structure, where the heterogeneous waveguide structure includes a lithium niobate thin film and a pattern structure on silicon, and the pattern structure on silicon is disposed on a side surface of the lithium niobate thin film away from the package substrate.

Optionally, the electro-optic modulator comprises a first buried oxide layer and a second buried oxide layer;

the first oxygen burying layer is arranged between the first electrode and the lithium niobate thin film, and the second oxygen burying layer is arranged between the pattern structure on the silicon and the second electrode.

Optionally, a portion between the second buried oxide layer and the lithium niobate thin film, except for the pattern structure on silicon, is a resin adhesive.

Optionally, the three-dimensional optoelectronic package structure includes a conductive structure and a pin, and the conductive structure is used for connecting the second electrode and the pin.

The embodiment of the application provides a three-dimensional photoelectric packaging method, which comprises the following steps:

forming an electro-optic modulator;

forming a first electrode on one side of the electro-optic modulator;

disposing an electrical chip on the first electrode; the electro-optical modulator and the electric chip are electrically connected by the first electrode;

forming a second electrode on the other side of the electro-optic modulator;

the electrical chip and the electro-optic modulator are disposed on a package substrate with the electrical chip facing the package substrate.

Optionally, the forming an electro-optic modulator comprises:

providing a silicon substrate on an insulating substrate; the silicon substrate on the insulating substrate comprises a bottom silicon substrate, a second buried oxide layer and a top silicon substrate which are sequentially stacked;

etching the top silicon substrate to form a pattern structure on the silicon;

providing a first substrate, wherein a first buried oxide layer and a lithium niobate thin film are formed on the first substrate;

and bonding the first substrate and the silicon substrate on the insulating substrate in a direction that the lithium niobate thin film faces the silicon-on pattern structure, wherein the silicon-on pattern structure and the lithium niobate thin film form the electro-optical modulator.

Optionally, the bonding the first substrate and the silicon substrate on the insulating substrate with the lithium niobate thin film facing the direction of the pattern structure on silicon comprises:

and bonding the first substrate and the silicon substrate on the insulating substrate by using resin adhesive, wherein the part between the second buried oxide layer and the lithium niobate thin film except the silicon upper pattern structure is the resin adhesive.

Optionally, before forming the first electrode on one side of the electro-optic modulator, the method further comprises:

removing the first substrate;

before forming the second electrode on the other side of the electro-optic modulator, the method further comprises:

and removing the bottom silicon substrate.

Optionally, the forming a first electrode on one side of the electro-optic modulator comprises:

forming a first electrode on one side of the electro-optic modulator by using an electroplating process;

the forming a second electrode on the other side of the electro-optic modulator comprises:

a second electrode is formed on the other side of the electro-optic modulator using an electroplating process.

The embodiment of the application provides a three-dimensional photoelectric packaging structure, and three-dimensional photoelectric packaging structure includes: the electro-optical modulator comprises a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode is arranged on one side, far away from the packaging substrate, of the electric chip, the electro-optical modulator is arranged on one side, far away from the packaging substrate, of the first electrode, the electro-optical modulator is electrically connected with the electric chip through the first electrode, a second electrode is arranged on one side, far away from the packaging substrate, of the electro-optical modulator, and the first electrode and the second electrode are used for providing an electric field for the electro-optical modulator to perform electro-optical modulation.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram illustrating a three-dimensional optoelectronic package structure provided in an embodiment of the present application;

fig. 2 is a schematic structural diagram illustrating another three-dimensional optoelectronic package structure provided in an embodiment of the present application;

fig. 3 is a schematic flow chart illustrating a three-dimensional optoelectronic packaging method according to an embodiment of the present application;

fig. 4-15 show schematic structural diagrams of manufacturing a three-dimensional photoelectric packaging structure according to the three-dimensional photoelectric packaging method provided by the embodiment of the application.

Detailed Description

In order to make those skilled in the art better understand the technical solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.

The present application will be described in detail with reference to the drawings, wherein the cross-sectional views illustrating the structure of the device are not necessarily enlarged to scale, and the drawings are merely exemplary, which should not limit the scope of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

With the development of current semiconductor technology, semiconductor devices include various kinds, and have been applied to various fields, such as an electro-optical (EO) modulator in the field of optical communications. An electro-optical modulator is one of the key functional devices in an optical communication system, and can convert a driving electrical signal on an optical carrier wave and transmit the signal in an optical domain.

Thin film Lithium Niobate (LNOI) has excellent physical properties such as wide transparent bandwidth, strong electro-optic coefficient, good thermal stability, etc., and is considered an ideal material for making high performance electro-optic modulators. However, the traditional LNOI modulator has high etching difficulty and is an important reason for restricting the packaging and the application of the LNOI modulator in an optoelectronic integrated module. To accumulate the pi phase shift, conventional LNOI modulators require millimeter or even centimeter lengths and provide reasonable drive voltages. The larger size of the device can not meet the requirement of photoelectric integration on the compactness of the device, and is not beneficial to improving the integration level of the device.

That is, the current electro-optical modulator has a problem of low integration level when packaged, and cannot meet the practical application requirements.

Based on this, the embodiment of the present application provides a three-dimensional photoelectric packaging structure, and the three-dimensional photoelectric packaging structure includes: the electro-optical modulator comprises a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode is arranged on one side, far away from the packaging substrate, of the electric chip, the electro-optical modulator is arranged on one side, far away from the packaging substrate, of the first electrode, the electro-optical modulator is electrically connected with the electric chip through the first electrode, a second electrode is arranged on one side, far away from the packaging substrate, of the electro-optical modulator, and the first electrode and the second electrode are used for providing an electric field for the electro-optical modulator to perform electro-optical modulation.

For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.

Referring to fig. 1, the figure is a schematic structural diagram of a three-dimensional optoelectronic package structure provided in an embodiment of the present application.

The three-dimensional photoelectric packaging structure 100 provided by the embodiment of the application includes: a package substrate 110 and an electrical chip 120 disposed on one side of the package substrate 110.

In the embodiment of the present application, the package substrate 110 is a substrate 110 that provides support for the whole three-dimensional optoelectronic package structure, and an electrical chip (EIC) 120 may be disposed on one side of the package substrate 110. The electrical chip 120 is used to provide electrical signals.

The three-dimensional photoelectric package structure 100 provided in the embodiment of the present application includes: the first electrode 130, the first electrode 130 is disposed on a side of the electrical chip 120 away from the package substrate 110, that is, the first electrode 130 may be disposed on the electrical chip 120. The first electrode 130 may be made of a material having a relatively good electrical conductivity, such as a metal material.

The three-dimensional photoelectric packaging structure 100 provided by the embodiment of the application includes: the electro-optical modulator 140, the electro-optical modulator 140 is disposed on a side of the first electrode 130 away from the package substrate 110, i.e., the electro-optical modulator 140 is disposed on the first electrode 130.

In the embodiment of the present application, the electro-optical modulator 140 and the electrical chip 120 may be electrically connected by the first electrode 130, and as shown in fig. 1, there is no material between the first electrode 130 and the electro-optical modulator 140 except for the first electrode 130, which can reduce the light loss when light is transmitted in the electro-optical modulator 140. In addition, in the present application, the electro-optical modulator 140 and the electrical chip 120 are electrically connected by using the first electrode 130, so that the interconnection distance between the electro-optical modulator 140 and the electrical chip 120 is short, the high-speed interconnection path between the electro-optical modulator 140 and the electrical chip 120 can be effectively shortened, and the interconnection bandwidth is improved.

The three-dimensional photoelectric packaging structure 100 provided by the embodiment of the application includes: and a second electrode 150, wherein the second electrode 150 is disposed on a side of the electro-optical modulator 140 away from the package substrate 110, that is, the second electrode 150 is disposed on the electro-optical modulator 140. Specifically, the first electrode 130 and the second electrode 150 may be a part of a metal interconnect layer (RDL). As an example, to improve the electrical contact between the electrical chip 120 and the first electrode 130, the electrical connection between the first electrode 130 and the electrical chip may be implemented by using a Ball Grid Array (BGA) 131, that is, the electrical connection between the electrical chip 120 and the electro-optic modulator 140 may be implemented by using a BGA and a metal interconnection layer, as shown in fig. 2.

In an embodiment of the present application, the first electrode 130 and the second electrode 150 are used to provide an electric field for electro-optic modulation by the electro-optic modulator 140. The first electrode 130 and the second electrode 150 are used for providing a longitudinal electric field which vertically penetrates through the electro-optical modulator 140 for the electro-optical modulator 140, namely a Z-cut electrode is provided for the electro-optical modulator 140, the first electrode 130 and the second electrode 150 do not need to be etched on a lithium niobate thin film to form electrodes of the electro-optical modulator 140, compared with the method that an X-cut electrode and a Y-cut electrode which are formed through etching are provided for the electro-optical modulator 140, the packaging space for packaging the electro-optical modulator 140 can be greatly reduced, the electro-optical modulator 140 based on the Z-cut electrode is isotropic on the plane, bending and folding can be allowed, the space occupied by a three-dimensional electro-optical packaging structure is further reduced, and the integration level is improved.

Specifically, the direction of the electric field provided by the first electrode 130 and the second electrode 150 is directed from the first electrode 130 to the second electrode 150, the optical waveguide propagation direction of the electro-optical modulator 140 is the extending direction of the first electrode 130 or the second electrode 150, and the optical waveguide propagation direction is perpendicular to the electric field direction.

In the embodiment of the present application, the electro-optical modulator 140 is a hetero-waveguide structure including a lithium niobate thin film 141 and a pattern structure on silicon 142, as shown with reference to fig. 2, wherein the pattern structure on silicon 142 is disposed on a side surface of the lithium niobate thin film 141 away from the package substrate 110, that is, the pattern structure on silicon 142 is disposed on the lithium niobate thin film 141. According to the embodiment of the application, the ridge-shaped optical waveguide structure is formed by utilizing the silicon-on-silicon pattern structure 142 and the lithium niobate thin film 141, and the silicon material is utilized to form the pattern structure, so that the ridge-shaped optical waveguide structure formed by utilizing the lithium niobate thin film 141 is avoided, the lithium niobate thin film 141 can be prevented from being etched, the difficulty of etching the ridge-shaped structure is reduced, and the process difficulty of forming the electro-optic modulator 140 is reduced.

In practical application, the optical waveguide formed by using silicon and lithium niobate has higher refractive index, can reduce the bending radius, can realize electro-optic modulation when the waveguide is bent, can further reduce the size of the waveguide, reduces the size of a three-dimensional electro-optic packaging structure, and improves the integration level.

In an embodiment of the present application, the electro-optic modulator 140 comprises a first buried oxide layer 143 and a second buried oxide layer 144, the first buried oxide layer 143 being disposed between the first electrode 130 and the lithium niobate thin film 141, the second buried oxide layer 144 being disposed between the silicon on pattern structure 142 and the second electrode 150.

In the embodiment of the present application, the part between the second buried oxide layer 144 and the lithium niobate thin film 141 except for the pattern structure 142 on silicon is the resin adhesive 145, and the formation of the hetero-waveguide structure of the electro-optical modulator 140 can be realized by using the resin adhesive 145, and the bonding strength of the whole electro-optical modulator is enhanced. Specifically, the resin paste 145 may be BCB paste.

In the embodiment of the present application, the electrical chip 120 may be packaged by using an injection Molding (Molding) structure 160, which also facilitates the high reliability integration of the electro-optical modulator and additionally avoids the damage of the electrical chip 120.

In practical applications, the electrical chip 120 and the electro-optic modulator 140 can be electrically connected by the remaining portion of the metal interconnection layer, in addition to the first electrode 130. As an example, an interconnection layer may be disposed on a surface of the electrical chip 120 close to the package substrate 110, and the electrical connection between the interconnection layer on the electrical chip 120 side and the metal interconnection layer on the electro-optical modulator 140 side is realized by a metal contact 161 penetrating through the injection molding structure 160, and finally, the electrical connection between the electrical chip 120 and the electro-optical modulator 140 is realized by the metal contact 161.

Specifically, the metal contact 161 may be formed by filling a metal material in a vertical hole (TMV) penetrating the injection Molding structure 160.

In the embodiment of the present application, the three-dimensional optoelectronic package structure 100 includes a conductive structure 170 and a pin 121, the conductive structure 170 is disposed around the electrical chip 120 and the electro-optical modulator 140, the pin 121 is disposed between the electrical chip 120 and the package substrate 110, and the electrical chip 120 can perform input and output of electrical signals by using the pin 121. Conductive structure 170 is used to connect second electrode 150 to the ground network in pin 121.

In particular, the pins 121 may be a Ball Grid Array (BGA) to facilitate broadband electrical transmission.

In practical applications, the pins 121 may be disposed between the package substrate 110 and the electrical chip 120, the package substrate 110 may be disposed with a metal interconnection layer for electrically connecting with the pins 121, and the conductive structures 170 utilize the metal interconnection layer and the pins 121 for electrically connecting with a ground network.

In practical applications, the conductive structure 170 may include a first conductive structure 171 and a second conductive structure 172, the first conductive structure 171 is used to connect the second electrode 150 and the second conductive structure 172, and the first conductive structure 171 may be a conductive adhesive or a conductive silver paste. The first conductive structure 171 may be a metal upper Lid (Lid).

That is to say, the conductive structure 170 not only plays a role of electrical signal transmission, but also can protect the package of the electrical chip 120 and the electro-optical modulator 140, and improve the integration level of the three-dimensional optoelectronic package structure.

Therefore, the three-dimensional photoelectric integrated packaging structure based on the Z-cut electro-optic modulator is provided, a ridge structure is prevented from being formed on lithium niobate through etching, the process difficulty is reduced, substrate silicon is removed, optical loss is reduced, the Z-cut electro-optic modulator can increase the overlap integral of an electric field and an optical field, electro-optic modulation can be achieved when waveguide bending and the structure are changed, meanwhile, a three-dimensional integration mode is adopted, the electric chip and the electro-optic modulator are assembled back to back, the high-speed interconnection path is short, and the three-dimensional photoelectric integrated packaging structure is a potential three-dimensional photoelectric integrated packaging structure capable of achieving high bandwidth, low optical loss, high modulation efficiency and low half-wave voltage.

The embodiment of the application provides a three-dimensional photoelectric packaging structure, and the three-dimensional photoelectric packaging structure includes: the electro-optical modulator comprises a packaging substrate and an electric chip arranged on one side of the packaging substrate, a first electrode is arranged on one side of the electric chip far away from the packaging substrate, the electro-optical modulator is arranged on one side of the first electrode far away from the packaging substrate, the electro-optical modulator and the electric chip are electrically connected through the first electrode, a second electrode is arranged on one side of the electro-optical modulator far away from the packaging substrate, and the first electrode and the second electrode are used for providing an electric field for the electro-optical modulator to perform electro-optical modulation.

Based on the three-dimensional photoelectric packaging structure provided by the above embodiment, the embodiment of the application also provides a three-dimensional photoelectric packaging method, and the working principle of the three-dimensional photoelectric packaging structure is described in detail below with reference to the accompanying drawings.

Referring to fig. 3, the figure is a schematic flow chart of a three-dimensional optoelectronic packaging method according to an embodiment of the present application.

The three-dimensional photoelectric packaging method provided by the embodiment of the application comprises the following steps of:

s101, forming an electro-optical modulator, as shown with reference to fig. 4-7.

In embodiments of the present application, the electro-optic modulator 140 may be formed first, for subsequent packaging of the electro-optic modulator 140.

The steps of forming the electro-optic modulator 140 are as follows:

S101A, a Silicon-On-Insulator (SOI) substrate 200 On an insulating substrate is provided, as shown with reference to fig. 4.

In an embodiment of the present application, the SOI substrate 200 includes a bottom layer silicon substrate 201, a second buried oxide layer 144, and a top layer silicon substrate 202, which are sequentially stacked. Specifically, the SOI substrate may be an SOI wafer.

S101B, etching the top silicon substrate 202 to form the pattern structure 142 on silicon, which is shown with reference to FIG. 5.

In an embodiment of the present application, the top silicon substrate 202 of the SOI substrate 200 may be etched to form the pattern-on-silicon structure 142.

S101C, a first substrate 300 is provided, as shown with reference to fig. 6.

In the embodiment of the present application, the first substrate 300 is formed with the first buried oxide layer 143 and the lithium niobate thin film 141, where the lithium niobate thin film 141 covers the first buried oxide layer 143.

S101D, bonding the first substrate 300 and the SOI substrate 200 in a direction in which the lithium niobate thin film 141 faces the silicon on pattern structure 142, as shown with reference to fig. 7.

In the embodiment of the present application, the first substrate 300 and the SOI substrate 200 may be bonded in a direction in which the lithium niobate thin film 141 is oriented toward the silicon-on-pattern structure 142, and the silicon-on-pattern structure 142 and the lithium niobate thin film 141 may constitute the electro-optical modulator 140.

Specifically, the first substrate 300 and the SOI substrate 200 may be bonded by using a resin adhesive 145, that is, the portion between the second buried oxide layer 144 and the lithium niobate thin film 141 except for the upper silicon pattern structure 142 is the resin adhesive 145.

S102, a first electrode 130 is formed on one side of the electro-optical modulator 140, as shown with reference to fig. 9.

In embodiments of the present application, the first substrate 300 may be removed before the first electrode 130 is formed on one side of the electro-optic modulator 140, as shown with reference to FIG. 8. Specifically, the first substrate 300 may be removed by Chemical Mechanical Polishing (CMP) or wet etching, and the lithium niobate thin film 141 and the second buried oxide layer 144 remain.

After removing the first substrate 300, the first electrode 130 may be formed on one side of the electro-optical modulator 140, and particularly, the first electrode 130 may be formed by an electroplating process.

S103, disposing the electric chip 120 on the first electrode 130, as shown with reference to fig. 10.

In an embodiment of the present application, after the first electrode 130 is formed, the electrical chip 120 may be disposed on the first electrode 130, so that the electro-optical modulator 140 and the electrical chip 120 are electrically connected by the first electrode 130.

Specifically, the electrical chip 120 may be flipped over the first electrode 130, that is, the electrical chip 120 is flipped over the electro-optical modulator 140, and the injection molded structure 160 is formed around the electrical chip 120 to encapsulate the electrical chip 120, and the injection molded structure 160 is thinned by using CMP, as shown in fig. 10.

In practical applications, the injection-molded structure 160 may be etched to form a Through-Molding Via (TMV) penetrating the injection-molded structure 160, and then the vertical Via is filled with a metal material to form the metal contact 161. The vertical holes may be filled with electroplating to form metal contacts 161.

After forming the metal contact 161, a lead 121 may be formed on a side of the electric chip 120 away from the first electrode 130, and may be formed by using a plating process, as shown in fig. 11.

In practical applications, to improve the electrical connection between the electrical chip 120 and the leads 121, an interconnect layer may be formed on the side of the injection-molded structure 160 and the electrical chip 120 away from the first electrode 130 before the leads 121 are formed, and the leads 121 are disposed on the interconnect layer.

And S104, forming a second electrode 150 on the other side of the electro-optical modulator 140, as shown with reference to fig. 14.

In an embodiment of the present application, the underlying silicon substrate 201 may be removed before the second electrode 150 is formed on the other side of the electro-optic modulator 140, as shown with reference to FIG. 13. Specifically, the underlying silicon substrate 201 may be removed by Chemical Mechanical Polishing (CMP) or wet etching, and the removal of the underlying silicon substrate 201 helps to reduce optical loss when light is transmitted in the electro-optic modulator 140. And the electro-optical modulator 140 and the electrical chip 120 are electrically connected by using the first electrode 130, so that the interconnection distance between the electro-optical modulator 140 and the electrical chip 120 is short, the high-speed interconnection path between the electro-optical modulator 140 and the electrical chip 120 can be effectively shortened, and the interconnection bandwidth is improved.

In practical applications, the leads 121 may be protected before removing the underlying silicon substrate 201, and specifically, the leads 121 may be bonded to the temporary carrier board 400 by using a bonding adhesive, as shown in fig. 12.

In the embodiment of the present application, after the leads 121 are protected and the underlying silicon substrate 201 is removed, the second electrode 150 may be formed on the other side of the electro-optical modulator 140, and referring to fig. 14, the second electrode 150 may be formed by using an electroplating process.

S105, disposing the electrical chip 120 and the electro-optic modulator 140 on the package substrate 110 with the electrical chip 120 facing the package substrate 110, as shown with reference to fig. 1.

In an embodiment of the present application, the temporary carrier board 400 may be removed before the electrical chip 120 and the electro-optic modulator 140 are disposed on the package substrate 110, as shown with reference to fig. 15.

After removing the temporary carrier 400, the pins 121 are exposed, and the electrical chip 120 and the electro-optical modulator 140 are disposed on the package substrate 110 with the electrical chip 120 facing the package substrate 110, as shown with reference to fig. 1.

After bonding the electrical chip 120 and the package substrate 110, the conductive structure 170 may be formed, as illustrated with reference to fig. 2.

The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the method embodiment, since it is basically similar to the structure embodiment, the description is simple, and the relevant points can be referred to the partial description of the structure embodiment.

The description of the flow or structure corresponding to each of the above drawings has emphasis, and a part not described in detail in a certain flow or structure may refer to the related description of other flows or structures.

The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.

The present application may further combine to provide more implementation manners on the basis of the implementation manners provided by the above aspects.

Claims (10)

1. A three-dimensional photoelectric packaging structure, comprising:

the packaging structure comprises a packaging substrate and an electric chip arranged on one side of the packaging substrate;

the first electrode is arranged on one side, far away from the packaging substrate, of the electric chip;

the electro-optical modulator is arranged on one side, away from the packaging substrate, of the first electrode, and the electro-optical modulator and the electric chip are electrically connected through the first electrode;

the second electrode is arranged on one side of the electro-optical modulator, which is far away from the packaging substrate; the first electrode and the second electrode are used for providing an electric field for electro-optical modulation of the electro-optical modulator.

2. The three-dimensional photoelectric packaging structure of claim 1, wherein the electro-optic modulator comprises a hetero-waveguide structure, the hetero-ridge waveguide structure comprises a lithium niobate thin film and a pattern-on-silicon structure, and the pattern-on-silicon structure is disposed on a side surface of the lithium niobate thin film away from the packaging substrate.

3. The three-dimensional electro-optic package structure of claim 2, wherein the electro-optic modulator comprises a first buried oxide layer and a second buried oxide layer;

the first oxygen burying layer is arranged between the first electrode and the lithium niobate thin film, and the second oxygen burying layer is arranged between the pattern structure on the silicon and the second electrode.

4. The three-dimensional photoelectric packaging structure of claim 3, wherein a portion between the second buried oxide layer and the lithium niobate thin film except for the pattern structure on silicon is a resin adhesive.

5. The three-dimensional optoelectronic package structure according to any one of claims 1 to 4, wherein the three-dimensional optoelectronic package structure comprises a conductive structure and a pin, and the conductive structure is used for connecting the second electrode and the pin.

6. A three-dimensional optoelectronic packaging method, the method comprising:

forming an electro-optic modulator;

forming a first electrode on one side of the electro-optic modulator;

disposing an electrical chip on the first electrode; the electro-optical modulator and the electric chip are electrically connected by the first electrode;

forming a second electrode on the other side of the electro-optic modulator;

the electrical chip and the electro-optic modulator are disposed on a package substrate with the electrical chip facing the package substrate.

7. The method of claim 6, wherein the forming the electro-optic modulator comprises:

providing a silicon substrate on an insulating substrate; the silicon substrate on the insulating substrate comprises a bottom silicon substrate, a second buried oxide layer and a top silicon substrate which are sequentially stacked;

etching the top silicon substrate to form a pattern structure on the silicon;

providing a first substrate, wherein a first oxygen burying layer and a lithium niobate thin film are formed on the first substrate;

and bonding the first substrate and the silicon substrate on the insulating substrate in a direction that the lithium niobate thin film faces the silicon pattern structure, wherein the silicon pattern structure and the lithium niobate thin film form the electro-optical modulator.

8. The three-dimensional photoelectric packaging method of claim 7, wherein the bonding the first substrate and the silicon substrate on the insulating substrate with the lithium niobate thin film facing the direction of the pattern structure on silicon comprises:

and bonding the first substrate and the silicon substrate on the insulating substrate by using resin adhesive, wherein the part between the second buried oxide layer and the lithium niobate thin film except the pattern structure on the silicon is resin adhesive.

9. The three dimensional electro-optic packaging method of claim 7, wherein prior to forming the first electrode on the side of the electro-optic modulator, the method further comprises:

removing the first substrate;

before forming the second electrode on the other side of the electro-optic modulator, the method further comprises:

and removing the bottom silicon substrate.

10. The three-dimensional optoelectronic packaging method of any one of claims 1-9, wherein the forming a first electrode on one side of the electro-optic modulator comprises:

forming a first electrode on one side of the electro-optic modulator by using an electroplating process;

the forming of the second electrode at the other side of the electro-optic modulator comprises:

a second electrode is formed on the other side of the electro-optic modulator using an electroplating process.

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