CN115721053A - Atomizing core, atomizer, aerosol generating device and atomizing core preparation method - Google Patents
Atomizing core, atomizer, aerosol generating device and atomizing core preparation method Download PDFInfo
- Publication number
- CN115721053A CN115721053A CN202211450234.7A CN202211450234A CN115721053A CN 115721053 A CN115721053 A CN 115721053A CN 202211450234 A CN202211450234 A CN 202211450234A CN 115721053 A CN115721053 A CN 115721053A
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetron sputtering
- sputtering
- thickness
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention provides an atomizing core, an atomizer, an aerosol generating device and a preparation method of the atomizing core. Thus, the thickness of the heating element is controlled
Within the range of (1), the resistance value of the heating element can be stably controlled to be within 0.3 ℃Within the range of 2 omega, reach the thickness that the attenuate generates heat and make the resistance value that generates heat be in using the resistance within range of regulation, can effectively shorten the processing formation time that generates heat, reduce the processing and form the required target that generates heat to the processing cycle that makes generate heat is shorter and processing manufacturing cost is lower. The preparation method of the atomizing core in the embodiment of the invention is convenient for the cooperative regulation and control of the thickness and the resistance value of the heating part, and the thickness of the heating part is reduced within the range of using the specified resistance.
Description
Technical Field
The invention belongs to the technical field of atomization, and particularly relates to an atomization core, an atomizer, an aerosol generating device and an atomization core preparation method.
Background
The ceramic atomizing core used in the aerosol generating device is generally formed by attaching a layer of heating film on the atomizing surface of porous ceramic, and heating the aerosol forming substrate on the atomizing surface through the heating film to atomize the aerosol forming substrate to form aerosol. At present, when a heating film meeting the resistance value specification requirement is processed and formed on porous ceramics by adopting metal materials such as W and the like, the heating film with the thickness of 5-10 μm is generally required to be processed and formed on the porous ceramics. Because the thickness of the heating film processed and formed on the porous ceramic is thicker, a series of problems of more complex processing technology, more processing difficulty, longer processing time and more processing consumable materials exist, and thus the processing period of the heating film is long and the processing cost is high.
Disclosure of Invention
Based on the above problems in the prior art, an object of an embodiment of the present invention is to provide an atomizing core, so as to solve the problems in the prior art that a heating film is formed on a porous ceramic by processing a metal such as W, and a thicker heating film needs to be formed, which results in a long processing period and a high processing cost.
In order to achieve the purpose, the invention adopts the technical scheme that: there is provided an atomizing core comprising:
a porous matrix for storing and transporting the aerosol-forming substrate; and
the heating element is used for heating and atomizing aerosol to form a substrate after being electrified;
wherein the heat generating member includes a noble metal layer provided on the porous base body, the noble metal layer constituting a first heat generation of the heat generating memberLayer, the thickness of the heating member is
The resistance value of the heating element is 0.3-2 omega.
Optionally, the noble metal layer is an Ag layer, and the Ag layer has a thickness of
Optionally, the heat generating layer further comprises a bonding layer for forming a chemical bond with the porous substrate to bond the noble metal layer to the porous substrate, the bonding layer is stacked on the porous substrate, and the noble metal layer is stacked on a side of the bonding layer facing away from the porous substrate; the bonding layer is a metal layer or an alloy layer, so that the bonding layer can form a second heating layer of the heating member.
Optionally, the noble metal layer is an Ag layer, the bonding layer is an NiCr alloy layer, and the Ag layer has a thickness of
The thickness of the NiCr alloy layer is
Optionally, the noble metal layer is an Au layer, the bonding layer is a Ti metal layer, and the Au layer has a thickness of
The thickness of the Ti metal layer is
Based on the above problems in the prior art, it is a second object of the embodiments of the present invention to provide an atomizer having an atomizing core provided in any of the above aspects.
In order to achieve the purpose, the invention adopts the technical scheme that: an atomizer is provided, which comprises the atomizing core provided by any scheme.
Based on the above problems in the prior art, it is another object of the embodiments of the present invention to provide an aerosol generating device having an atomizing core or an atomizer provided in any of the above aspects.
In order to achieve the purpose, the invention adopts the technical scheme that: there is provided an aerosol generating device comprising the atomizing wick or the atomizer provided in any of the above aspects.
Compared with the prior art, one or more technical schemes in the embodiment of the invention have at least one of the following beneficial effects:
in the atomizing core, the atomizer and the aerosol generating device in the embodiment of the invention, in the atomizing core structure, the heating part comprises a precious metal layer arranged on the porous matrix, and the precious metal layer forms a first heating layer of the heating part so as to form the heating part comprising the precious metal layer on the porous matrix. Thus, the thickness of the heating element is controlled
Within the range of (3), the resistance value of the heating element can be stably controlled within the range of 0.3-2 omega, the purposes of reducing the thickness of the heating element and enabling the resistance value of the heating element to be within the resistance range specified by the use are achieved, the processing forming time of the heating element can be effectively shortened, the target material required by the heating element is reduced, and therefore the processing period of the heating element is shorter and the processing production cost is lower. Therefore, the defects that in the prior art, the heating film is formed by processing W and other metals on the porous ceramic, and the heating film with a thicker thickness needs to be formed by processing, so that the processing period is long and the processing and production cost is high can be well overcome.
Based on the above problems in the prior art, it is a fourth object of the embodiments of the present invention to provide a method for preparing an atomizing core.
In order to realize the purpose, the invention adopts the technical scheme that: provided is a preparation method of an atomizing core, which comprises the following steps:
step S01: preheating the porous matrix in a magnetron sputtering machine;
step S02: depositing a noble metal layer on the porous substrate by a magnetron sputtering process;
alternatively, the first and second electrodes may be,
step S01: preheating the porous matrix in a magnetron sputtering machine;
step S02: depositing a bonding layer on the porous substrate by a magnetron sputtering process, wherein the bonding layer is a metal layer or an alloy layer, and the bonding layer and the porous substrate form a chemical bond;
step S03: and depositing a noble metal layer on the bonding layer through a magnetron sputtering process, wherein the noble metal layer and the bonding layer form a chemical bond.
Optionally, the sputtering power of the magnetron sputtering is 50-150W, and the total sputtering time of the magnetron sputtering is 40-106 minutes.
Optionally, the sputtering temperature of the magnetron sputtering is 25 to 28 ℃, and the sputtering pressure of the magnetron sputtering is 2 to 3mt.
Compared with the prior art, one or more technical schemes in the embodiment of the invention have at least one of the following beneficial effects:
the preparation method of the atomizing core in the embodiment of the invention adopts a magnetron sputtering process in a film physical phase deposition process to carry out magnetron sputtering on the noble metal target material on the porous substrate so as to form the heating element comprising the noble metal layer on the porous substrate, so that the resistance value of the heating element can be controlled within the range of 0.3-2 omega, and the thickness of the heating element can be controlled within the range of 0.3-2 omega
Within the range, the thickness of the heating part can be greatly reduced, the processing forming time of the heating part can be effectively shortened, and the target material required by the heating part is reduced, so that the processing period of the heating part is shorter and the processing production cost is lower. In addition, the atomization core preparation method in the embodiment of the invention adopts a magnetron sputtering process in a film physical phase deposition process to carry out magnetron sputtering on the noble metal target material on the porous substrate so as to form a layer containing the noble metal on the porous substrateThe heating element is convenient for the cooperative regulation and control of the thickness and the resistance value of the heating element, and the thickness of the thinning heating element is ensured to be realized in the use specified resistance range.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic perspective view of an atomizing core provided in an embodiment of the present invention;
FIG. 2 is an exploded view of the atomizing core shown in FIG. 1;
fig. 3 is a schematic perspective view of an atomizing core according to another embodiment of the present invention;
FIG. 4 is an exploded view of the atomizing core shown in FIG. 3;
fig. 5 is a schematic perspective view of a porous matrix according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-a porous matrix; 11-liquid absorption surface; 12-a reservoir; 13-atomizing surface;
2-a heating element; 21-a noble metal layer; 22-a bonding layer;
3-electrodes.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "connected" or "disposed" to another element, it can be directly on the other element or be indirectly connected to the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "plurality" is one or more unless specifically limited otherwise.
In the description of the present invention, it is to be understood that the terms "center", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are used merely for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment," "in some embodiments," or "in some embodiments" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Referring to fig. 1 to 5, an atomizing core according to an embodiment of the present invention will now be described. The atomizing core provided by the embodiment of the invention is used for the atomizer, can generate heat under the electric drive of a power supply device of an aerosol generating device, heats and atomizes the aerosol forming substrate in the liquid storage cavity of the atomizer to form aerosol, and the aerosol formed by the aerosol forming substrate is atomized to be provided for a user to eat.
Referring further to fig. 1, 2 and 5, an atomizing core according to an embodiment of the present invention includes a porous substrate 1 and a heat generating member 2, the porous substrate 1 is used for storing and transporting an aerosol-forming substrate, and the heat generating member 2 is used for heating and atomizing the aerosol-forming substrate after being energized. Specifically, the surface of the porous substrate 1 is formed with the atomizing surface 13 for heating and atomizing the aerosol-forming substrate, and it is understood that the surface of the porous substrate 1 is formed with the atomizing surface, which means that at least a part of the outer surface of the porous substrate 1 is formed with the atomizing surface, that is, the outer surface of one side or more sides of the porous substrate 1 is formed with the atomizing surface 13. It should be noted that the above-mentioned at least part of the outer surface may also refer to a case where a part of the surface on the outer surface on the side of the porous substrate 1 is formed with the atomization surface 13, that is, the area of the atomization surface 13 is smaller than the area of the outer surface on the side. The upper sea of the porous base body 1 is provided with a liquid absorption surface 11, the liquid absorption surface 11 is concavely provided with a liquid storage tank 12 capable of storing aerosol-forming substrates, the interior of the porous base body 1 and/or the surface of the porous base body 1 are/is provided with micropores with capillary adsorption effect, the porous base body 1 can adsorb the aerosol-forming substrates through the liquid absorption surface 11, and the aerosol-forming substrates adsorbed and stored by the porous base body 1 can be continuously transmitted to the atomization surface 13 or the heating element 2 through the micropores. Due to the arrangement of the liquid storage tank 12, the transmission distance of the aerosol forming substrate to the atomizing surface 13 or the heating element 2 can be shortened, the full and rapid liquid supply to the heating element 2 is facilitated, and the heating element 2 is prevented from being burnt. The above porous substrate 1 may be, but not limited to, porous ceramic, porous glass, porous plastic, porous fiber, porous metal, or the like. In the porous matrix 1 ofIn the case of the porous ceramic, the porosity of the porous ceramic may be, but is not limited to, 45 to 65%, further 45 to 52.08%, the pore size of the micropores of the porous ceramic may be, but is not limited to, 25 to 31.33 μm, and the specific surface area of the porous ceramic may be, but is not limited to, 0.037 to 0.049m 2 (ii)/g, further 0.04 to 0.0433m 2 The static density is 1.52 to 1.64g/cm 3 The specific pore volume is 0.28-0.36 ml/g, and the median pore diameter is 15-40 μm.
Referring to fig. 1 and 2, the heat generating member 2 includes a noble metal layer 21 disposed on the porous substrate 1, the noble metal layer 21 forms a first heat generating layer of the heat generating member 2, and the thickness of the heat generating member 2 is 3900 ∞
The resistance value of the heating element 2 is 0.3-2 omega. According to the resistance calculation formula, the thickness and the conductivity of the heating element 2 determine the resistance value of the heating element 2. When the conductivity of the heating element 2 is constant, the thinner the thickness of the heating element 2 is, the larger the resistance value is, and the thicker the thickness of the heating element 2 is, the smaller the resistance value is, so that the purpose of adjusting the resistance value of the heating element 2 can be achieved by adjusting and controlling the thickness of the heating element 2. Meanwhile, in the research and development process, a large number of experiments find that: when the thickness of the heat generating member 2 is too thick; on one hand, the heating element 2 needs longer forming time, thereby greatly reducing the production efficiency; on the other hand, the larger the stress of the heating element 2 is, the more the microstructure of the heating element 2 is destroyed in the electrifying use process, which affects the stability of the resistance value of the heating element 2; on the other hand, the more target materials are needed for the processed heating element 2, thereby greatly increasing the production cost. And considering that the resistance of the heating element 2 is too low, the safety hazard of short circuit and overload of the heating element 2 exists, and the resistance of the heating element 2 is too high, the required heating power cannot be reached, so the common resistance of the heating element 2 is 0.2-2 omega. Considering the influence of the thickness of the heating member 2 on the stability of the resistance of the heating member 2, considering the positive correlation between the thickness of the heating member 2 and the forming time, and combining the common resistance of the heating member 2 to be 0.2-2 omega, the resistance value of the heating member 2 is controlled to be 0.3-2 omega. At this time, the resistance of the heat generating member 2 is controlledThe first heat-generating layer of the heat-generating member 2 is formed by using the noble metal layer 21 within the specification of 0.3-2 omega, and the thickness of the heat-generating member 2 is set to be only the thickness of the heat-generating member 2 because the resistivity of the noble metal is small
The standard requirement of controlling the resistance value of the heating element 2 to be 0.3-2 omega can be met. The thickness of the heating member 2 is set at
So that the thickness of the heating member 2 is within a thinner thickness range; on one hand, the forming time of the heating element 2 is short, so that the production efficiency is greatly improved; on the other hand, the stress of the heating element 2 is correspondingly reduced, so that the microstructure of the heating element 2 is prevented from being damaged in the electrifying use process, and the stability of the resistance value of the heating element 2 is prevented from being influenced; on the other hand, the target material required by the processed heating element 2 is correspondingly reduced, thereby greatly reducing the production cost. In the embodiment of the invention, noble metal is selected as the first heat-generating layer of the heat-generating member 2, and the thickness of the heat-generating member 2 is set
The resistance of the heat generating member 2 can be made to be within the resistance range specified for use. Because the thickness of the heating part 2 is greatly reduced, the processing forming time of the heating part 2 can be effectively shortened, and the materials required for processing the heating part 2 are reduced, thereby ensuring that the processing period of the heating part 2 is short and the processing production cost is low. Therefore, the defects that in the prior art, the heating film is formed by processing W and other metals on the porous ceramic, and the heating film with a thicker thickness needs to be formed, so that the processing period is long and the processing and production cost is high are overcome.
Compared with the prior art, in the atomizing core structure provided by the embodiment of the invention, the heat generating member 2 comprises the precious metal layer 21 arranged on the porous substrate 1, and the precious metal layer 21 forms the first heat generating layer of the heat generating member 2, so that the heat generating member 2 comprising the precious metal layer 21 is formed on the porous substrate 1. Thus, only the thickness of the heat generating member 2 needs to be controlled to be
Within the range of (2), the resistance value of the heating element 2 can be stably controlled within the range of 0.3-2 omega, the purposes of reducing the thickness of the heating element 2 and enabling the resistance value of the heating element 2 to be within the resistance range specified by the use are achieved, the processing and forming time of the heating element 2 can be effectively shortened, the target material required by the heating element 2 is reduced, and therefore the processing period of the heating element 2 is shorter and the processing and production cost is lower. Therefore, the defects that in the prior art, the heating film is formed by processing W and other metals on the porous ceramic, and the heating film with a thicker thickness needs to be formed by processing, so that the processing period is long and the processing and production cost is high can be well overcome.
In some embodiments, the noble metal layer 21 is an Ag layer with a thickness of 14000E
In this embodiment, a noble metal Ag material having a small conductivity is used, and the thickness of the heat generating member 2 is set to be small due to the small conductivity of the noble metal Ag material
The resistance of the heating element 2 is in the range of the resistance specified in use, which is beneficial to shortening the processing period of the heating element 2 and reducing the processing and production cost of the heating element 2. It should be noted that the thickness of the Ag layer is larger than that of the Ag layer
The resistance value of the heating member 2 is less than 0.3 omega, and the thickness of the Ag layer is less than
In the process, the resistance value of the heating element 2 is larger than 2 Ω, so that the resistance of the heating element 2 cannot be in the resistance range specified by the use, and the heating element 2 cannot realize the function of heating atomized aerosol to form a substrate.
Referring further to fig. 3 and 4, in some embodiments, the heat generating layer further includes a bonding layer 22 for bonding the noble metal layer 21 to the porous substrate 1, the bonding layer 22 is stacked on the porous substrate 1, the noble metal layer 21 is stacked on a side of the bonding layer 22 away from the porous substrate 1, and the bonding layer 22 can form a chemical bond with the porous substrate 1 and the noble metal layer 21, respectively, so as to enhance the stability of the noble metal layer 21 bonded to the porous substrate 1. The bonding layer 22 is a metal layer or an alloy layer so that the bonding layer 22 can constitute the second heat generating layer of the heat generating member 2, and examples of materials for forming the metal layer or the alloy layer include metal elements such as Ti, cr, ni, and the like, and alloys thereof. It is to be understood that a material capable of causing the bonding layer 22 to form chemical bonds with the porous substrate 1 and the noble metal layer 21, respectively, may be used as a material for forming the bonding layer 22. The bonding layer 22 may form chemical bonds with the porous substrate 1 and the noble metal layer 21, respectively, and may be, but is not limited to, at least one of metallic bonds, covalent bonds, and ionic bonds.
In some of these embodiments, the noble metal layer 21 is an Ag layer, the bonding layer 22 is a NiCr alloy layer, and the Ag layer has a thickness of
The thickness of the NiCr alloy layer is
In this embodiment, an NiCr alloy layer is used as the bonding layer 22, and the thickness of the NiCr alloy layer is set to be
The binding stability of the Ag layer to the porous base 1 can be enhanced. It should be noted that the thickness of the NiCr alloy layer is less than that of the NiCr alloy layer
In the process, the NiCr alloy layer has poor binding force with the Ag layer, so that the Ag layer is easy to delaminate and fall off. The thickness of the NiCr alloy layer is larger than that of the NiCr alloy layer
In this case, the bonding strength between the NiCr alloy layer and the Ag layer can be further improved, but this is not favorableThe thickness of the heating member 2 is reduced. Therefore, the thickness of the NiCr alloy layer is limited to be smaller than the thickness of the heat generating member 2 by comprehensively considering the bonding force of the NiCr alloy layer and the Ag layer and the thickness reduction requirement of the heat generating member 2
In this embodiment, the noble metal Ag material having a small conductivity is used, and since the noble metal Ag material has a small conductivity, it is only necessary to set the thickness of the noble metal Ag layer to be equal to the thickness of the NiCr alloy layer serving as the bonding layer 22
The resistance of the heating element 2 is in the range of the resistance specified in use, which is beneficial to further shortening the processing period of the heating element 2 and reducing the processing and production cost of the heating element 2. It should be noted that the thickness of the Ag layer is larger than that of the Ag layer
The resistance value of the heating element 2 is less than 0.3 omega, and the thickness of the Ag layer is less than
In the process, the resistance value of the heating element 2 is larger than 2 Ω, so that the resistance of the heating element 2 cannot be in the resistance range specified by the use, and the heating element 2 cannot realize the function of heating atomized aerosol to form a substrate.
In some of these embodiments, the noble metal layer 21 is an Au layer, the bonding layer 22 is a Ti metal layer, and the Au layer has a thickness of
The thickness of the Ti metal layer is
In this embodiment, a Ti metal layer is used as the bonding layer 22, and the thickness of the Ti metal layer is set to
Not only can enhance the stability of the Au layer bonded on the porous substrate 1Further, the thickness of the bonding layer 22 can be reduced. It should be noted that the thickness of the Ti metal layer is less than
In this case, the bonding force between the Ti metal layer and the Au layer is poor, which easily causes the Au layer to delaminate and fall off. The thickness of the Ti metal layer is larger than that of the Ti metal layer
In this case, although the bonding force of the Ti metal layer and the Au layer can be further improved, it is not favorable for the thickness reduction of the heat generating member 2. Therefore, the thickness of the Ti metal layer is limited to be smaller than the thickness of the heat generating member 2 by comprehensively considering the bonding force of the Ti metal layer and the Au layer and the requirement of thickness reduction of the heat generating member 2
In this embodiment, a noble metal Au material having a small conductivity is used, and since the noble metal Au material has a small conductivity, it is only necessary to set the thickness of the noble metal Au layer to be equal to the thickness of the Ti metal layer serving as the bonding layer 22
The resistance of the heating element 2 is in the range of the resistance specified in use, which is beneficial to further shortening the processing period of the heating element 2 and reducing the processing and production cost of the heating element 2. It should be noted that the thickness of the Au layer is larger than that of the Au layer
The resistance value of the heating element 2 is less than 0.3 omega, and the thickness of the Au layer is less than
In the process, the resistance value of the heating element 2 is greater than 2 Ω, so that the resistance of the heating element 2 cannot be in the resistance range specified by the use, and the heating element 2 cannot realize the function of heating the atomized aerosol to form the substrate.
With further reference to fig. 1, fig. 2 and fig. 4, in some embodiments, the atomizing core further includes an electrode 3 for electrically connecting a lead or a conductive pogo pin, the electrode 3 is disposed on the porous base 1 or the noble metal layer 21 of the heating element 2, the electrode 3 is electrically connected to the noble metal layer 21, and the noble metal layer 21 of the heating element 2 can be electrically connected to a power supply device through the electrode 3, so as to supply power to the noble metal layer 21 of the heating element 2 through the power supply device. It should be noted that the electrodes 3 are provided in pairs, and the electrodes 3 may be, but are not limited to, noble metal electrodes made of noble metal materials such as silver, palladium, or silver-palladium alloy. The noble metal electrode may be a noble metal electrode layer formed on the noble metal layer 21 of the heat generating member 2 by a magnetron sputtering process, so that the noble metal electrode and the noble metal layer 21 form a chemical bond, and the firmness of the bonding of the noble metal electrode and the noble metal layer 21 is enhanced.
The embodiment of the invention also provides an atomizer which comprises the atomizing core provided by any one of the embodiments. The atomizer has all the technical characteristics of the atomizing core provided by any one of the embodiments, so that the atomizer has the same technical effect as the atomizing core.
The embodiment of the invention also provides an aerosol generating device, which comprises the atomizing core provided by any one of the embodiments or the atomizer provided by any one of the embodiments. Since the aerosol generating device has all the technical characteristics of the atomizing core or the atomizer provided by any one of the above embodiments, the aerosol generating device has the same technical effects as the atomizing core.
The embodiment of the invention also provides a preparation method of the atomization core for preparing the atomization core, which comprises the following steps:
step S01: the porous matrix 1 is placed in a magnetron sputtering machine and preheated under vacuum.
Step S02: a noble metal layer 21 is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of the magnetron sputtering is 50-150W, the total sputtering time of the magnetron sputtering is 54-106 minutes, the sputtering temperature of the magnetron sputtering is 25-28 ℃, and the sputtering pressure of the magnetron sputtering is 2-3 mt.
Alternatively, an embodiment of the present invention further provides a method for preparing an atomization core, which includes the following steps:
step S01: the porous matrix 1 is placed in a magnetron sputtering machine and preheated under vacuum conditions.
Step S02: and depositing a bonding layer 22 on the porous matrix 1 by a magnetron sputtering process, wherein the bonding layer 22 is a metal layer or an alloy layer, and the bonding layer 22 and the porous matrix 1 form a chemical bond. Wherein the sputtering power of magnetron sputtering is 50-150W, the total sputtering time of magnetron sputtering is 40-106 minutes, the sputtering temperature of magnetron sputtering is 25-28 ℃, and the sputtering pressure of magnetron sputtering is 2-3 mt.
Step S03: the noble metal layer 21 is deposited on the bonding layer 22 by a magnetron sputtering process, and the noble metal layer 21 forms a chemical bond with the bonding layer 22. Wherein the sputtering power of the magnetron sputtering is 50-150W, the total sputtering time of the magnetron sputtering is 54-106 minutes, the sputtering temperature of the magnetron sputtering is 25-28 ℃, and the sputtering pressure of the magnetron sputtering is 2-3 mt.
Compared with the prior art, the method for preparing the atomizing core adopts the magnetron sputtering process in the film physical phase deposition process to carry out magnetron sputtering on the noble metal target material on the porous matrix 1 so as to form the heating part 2 comprising the noble metal layer 21 on the porous matrix 1, so that the resistance value of the heating part 2 can be controlled within the range of 0.3-2 omega, and the thickness of the heating part 2 can be controlled within the range of 0.3-2 omega
Within the range of (2), can realize the thickness that the reduction generates heat a 2 by a wide margin, can effectively shorten the processing formation time that generates heat a 2, reduce the processing formation and generate heat a required target of 2 to make the machining cycle of generating heat a 2 shorter and processing manufacturing cost is lower. Therefore, the defects that in the prior art, the heating film is formed by processing W and other metals on the porous ceramic, and the heating film with a thicker thickness needs to be formed, so that the processing period is long and the processing and production cost is high are overcome. In addition, the atomization core preparation method in the embodiment of the invention adopts a magnetron sputtering process in a film physical phase deposition process to carry out magnetron sputtering on the noble metal target material on the porous substrate 1 so as to form the heating element 2 comprising the noble metal layer 21 on the porous substrate 1, thereby facilitating the butt heatingThe thickness and the resistance value of the heating piece 2 are cooperatively regulated, so that the resistance of the heating piece 2 is in a resistance range specified by use on the basis of effectively reducing the thickness of the heating piece 2, and a good heating and atomizing effect is achieved.
In order that the details of the above-described practice and operation of the invention will be clearly understood by those skilled in the art, and in order that the advantageous properties of the atomizing core of the present invention and the method of making it may be significantly manifested, the practice of the invention is illustrated by the following examples.
Example 1
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; an Ag layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 50W, the total sputtering time of magnetron sputtering is 80 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Example 2
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; an Ag layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 55W, the total sputtering time of magnetron sputtering is 93 minutes, the sputtering temperature of magnetron sputtering is 27 ℃, and the sputtering pressure of magnetron sputtering is 2.5mt.
Example 3
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; an Ag layer is deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 60W, the total sputtering time of magnetron sputtering is 106 minutes, the sputtering temperature of magnetron sputtering is 28 ℃, and the sputtering pressure of magnetron sputtering is 2mt.
Example 4
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 60W, the total sputtering time of magnetron sputtering is 30 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 40W, the total sputtering time of magnetron sputtering is 36 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Example 5
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 80W, the total sputtering time of magnetron sputtering is 36 minutes, the sputtering temperature of magnetron sputtering is 27 ℃, and the sputtering pressure of magnetron sputtering is 2.5mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 50W, the total sputtering time of magnetron sputtering is 40 minutes, the sputtering temperature of magnetron sputtering is 27 ℃, and the sputtering pressure of magnetron sputtering is 2.5mt.
Example 6
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 100W, the total sputtering time of magnetron sputtering is 39 minutes, the sputtering temperature of magnetron sputtering is 28 ℃, and the sputtering pressure of magnetron sputtering is 2mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 60W, the total sputtering time of magnetron sputtering is 43 minutes, the sputtering temperature of magnetron sputtering is 28 ℃, and the sputtering pressure of magnetron sputtering is 2mt.
Example 7
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and (3) depositing a Ti layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 100W, the total sputtering time of magnetron sputtering is 20 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 40W, the total sputtering time of magnetron sputtering is 20 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Example 8
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and (3) depositing a Ti layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 130W, the total sputtering time of magnetron sputtering is 23 minutes, the sputtering temperature of magnetron sputtering is 27 ℃, and the sputtering pressure of magnetron sputtering is 2.5mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 45W, the total sputtering time of magnetron sputtering is 25 minutes, the sputtering temperature of magnetron sputtering is 27 ℃, and the sputtering pressure of magnetron sputtering is 2.5mt.
Example 9
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and (3) depositing a Ti layer on the porous substrate 1 by a magnetron sputtering process, wherein the sputtering power of magnetron sputtering is 150W, the total sputtering time of magnetron sputtering is 26 minutes, the sputtering temperature of magnetron sputtering is 28 ℃, and the sputtering pressure of magnetron sputtering is 2mt.
And depositing an Ag layer on the NiCr layer, wherein the sputtering power of magnetron sputtering is 50W, the total sputtering time of magnetron sputtering is 28 minutes, the sputtering temperature of magnetron sputtering is 28 ℃, and the sputtering pressure of magnetron sputtering is 2mt.
Comparative example 1
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 250W, the total sputtering time of magnetron sputtering is 250 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 2
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 300W, the total sputtering time of magnetron sputtering is 300 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 3
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 400W, the total sputtering time of magnetron sputtering is 350 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 4
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 250W, the total sputtering time of magnetron sputtering is 250 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 5
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 300W, the total sputtering time of magnetron sputtering is 300 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 6
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a W layer was deposited on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 400W, the total sputtering time of magnetron sputtering is 350 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 7
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a layer of TiW is deposited on the porous substrate 1 by means of a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 250W, the total sputtering time of magnetron sputtering is 250 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 8
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a layer of TiW is deposited on the porous substrate 1 by means of a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 300W, the total sputtering time of magnetron sputtering is 300 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 9
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; a layer of TiW is deposited on the porous substrate 1 by means of a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 400W, the total sputtering time of magnetron sputtering is 350 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 10
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 250W, the total sputtering time of magnetron sputtering is 250 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 11
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 300W, the total sputtering time of magnetron sputtering is 300 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Comparative example 12
Putting the porous matrix 1 into a magnetron sputtering machine, and preheating under a vacuum condition; and depositing a NiCr layer on the porous substrate 1 by a magnetron sputtering process. Wherein the sputtering power of magnetron sputtering is 400W, the total sputtering time of magnetron sputtering is 350 minutes, the sputtering temperature of magnetron sputtering is 25 ℃, and the sputtering pressure of magnetron sputtering is 3mt.
Testing the relevant performance of the atomizing core:
the heat generating members 2 in the above examples 1 to 9 and comparative examples 1 to 12 were subjected to the tests of the resistance value and the thickness, respectively. In the examples and the comparative examples of the present application, the porous ceramics were coated with the film, and the resistance value of the film coated on the porous ceramics was measured with a multimeter. In the process of testing the resistance value, the standard samples of the common resistance value of the heating element 2 are adopted for comparison, and the resistance value of the standard samples is 0.2-2 omega. The relevant test data are shown in table 1.
Table 1 table of test data of heat generating members in examples 1 to 9 and comparative examples 1 to 12
As is clear from Table 1, the heat generating member 2 of examples 1 to 9 had a resistance value of 0.3 to 2. Omega. And a thickness of 0.3 to 2. Omega
While the heat generating member 2 of comparative examples 4 to 12 had a resistance value of 2.4 to 14 omega and a thickness of
The heat generating member 2 is formed by coating a film on the porous ceramic, the heat generating member 2 of the embodiments 1 to 9 has a thin thickness and a resistance value meeting the requirement of the common resistance range, compared with the heat generating member 2 of the comparative examples 4 to 12, and the heat generating member 2 of the comparative examples 4 to 12 has a relatively thick thickness and a resistance value not meeting the requirement of the common resistance range.
The above description is intended to be illustrative of the preferred embodiment of the present invention and should not be taken as limiting the invention, but rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (10)
1. An atomizing core, comprising:
a porous matrix for storing and transporting the aerosol-forming substrate; and
the heating element is used for heating and atomizing aerosol after being electrified to form a substrate;
wherein the heating element comprises a noble metal layer arranged on the porous substrate, the noble metal layer forms a first heating layer of the heating element, and the thickness of the heating element is
The resistance value of the heating element is 0.3-2 omega.
2. The atomizing core of claim 1, wherein the noble metal layer is an Ag layer having a thickness of
3. The atomizing core of claim 1, wherein the heat-generating layer further includes a bonding layer for forming a chemical bond with the porous substrate to bond the noble metal layer to the porous substrate, the bonding layer being layered on the porous substrate, the noble metal layer being layered on a side of the bonding layer facing away from the porous substrate; the bonding layer is a metal layer or an alloy layer, so that the bonding layer can form a second heating layer of the heating member.
4. The atomizing core of claim 3, wherein the noble metal layer is an Ag layer, the bonding layer is a NiCr alloy layer, and the Ag layer has a thickness of
The thickness of the NiCr alloy layer is
5. The atomizing core of claim 3, wherein the noble metal layer is an Au layer, the bonding layer is a Ti metal layer, and the Au layer has a thickness of
The thickness of the Ti metal layer is
6. An atomizer, characterized in that it comprises an atomizing core according to any one of claims 1 to 5.
7. An aerosol generating device comprising an atomising core according to any of claims 1 to 5 or an atomiser according to claim 6.
8. The preparation method of the atomizing core is characterized by comprising the following steps of:
step S01: preheating the porous matrix in a magnetron sputtering machine;
step S02: depositing a noble metal layer on the porous substrate by a magnetron sputtering process;
alternatively, the first and second electrodes may be,
step S01: preheating the porous matrix in a magnetron sputtering machine;
step S02: depositing a bonding layer on the porous substrate by a magnetron sputtering process, wherein the bonding layer is a metal layer or an alloy layer, and the bonding layer and the porous substrate form a chemical bond;
step S03: and depositing a noble metal layer on the bonding layer through a magnetron sputtering process, wherein the noble metal layer and the bonding layer form a chemical bond.
9. The method for preparing an atomizing core according to claim 8, wherein the sputtering power of the magnetron sputtering is 50 to 150W, and the total sputtering time of the magnetron sputtering is 40 to 106 minutes.
10. The method for preparing an atomizing core according to claim 8, wherein the sputtering temperature of the magnetron sputtering is 25 to 28 ℃, and the sputtering pressure of the magnetron sputtering is 2 to 3mt.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211450234.7A CN115721053A (en) | 2022-11-19 | 2022-11-19 | Atomizing core, atomizer, aerosol generating device and atomizing core preparation method |
| PCT/CN2023/100851 WO2024103717A1 (en) | 2022-11-19 | 2023-06-16 | Atomization core, atomizer, and aerosol generation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211450234.7A CN115721053A (en) | 2022-11-19 | 2022-11-19 | Atomizing core, atomizer, aerosol generating device and atomizing core preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115721053A true CN115721053A (en) | 2023-03-03 |
Family
ID=85296685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211450234.7A Pending CN115721053A (en) | 2022-11-19 | 2022-11-19 | Atomizing core, atomizer, aerosol generating device and atomizing core preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115721053A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024103717A1 (en) * | 2022-11-19 | 2024-05-23 | 常州市派腾电子技术服务有限公司 | Atomization core, atomizer, and aerosol generation device |
-
2022
- 2022-11-19 CN CN202211450234.7A patent/CN115721053A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024103717A1 (en) * | 2022-11-19 | 2024-05-23 | 常州市派腾电子技术服务有限公司 | Atomization core, atomizer, and aerosol generation device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11969013B2 (en) | Electronic cigarette, atomizing assembly, and atomizing component for same | |
| CN214509370U (en) | Atomizing core, atomizer and aerosol generating device | |
| EP4023090B1 (en) | Heating apparatus for an electronic cigarette and electronic cigarette having same | |
| CN113826962A (en) | Atomizing core, atomizer, aerosol generating device and atomizing core preparation method | |
| CN115721053A (en) | Atomizing core, atomizer, aerosol generating device and atomizing core preparation method | |
| WO2022121579A1 (en) | Atomizing core, atomizer, aerosol generating device and method for machining atomizing core | |
| CN216059229U (en) | Atomizing core, atomizer and aerosol generating device | |
| US20220132930A1 (en) | Electronic Cigarette Atomization Assembly and Manufacturing Method Therefor | |
| WO2021169782A1 (en) | Electronic atomization device, atomization assembly, atomization element and manufacturing method therefor | |
| CN114451586A (en) | Atomizing core with nano metal coating layer | |
| CN216701680U (en) | Atomizing core, atomizer and aerosol generating device | |
| CN216088890U (en) | Heating device and electronic atomization device | |
| CN111053298A (en) | Flexible heating element and manufacturing method thereof, flexible heating assembly and aerosol generator | |
| CN216983627U (en) | Atomizing core with nano metal coating layer | |
| CN114190608A (en) | Resistance heater for aerosol-generating device and aerosol-generating device | |
| CN219422198U (en) | Atomizing core, atomizer and aerosol generating device | |
| CN114794568A (en) | Heating element, atomization component and electronic atomization device | |
| CN114794567A (en) | Heating element, atomization component and electronic atomization device | |
| WO2024103717A1 (en) | Atomization core, atomizer, and aerosol generation device | |
| CN216059228U (en) | Atomizing core, atomizer and aerosol generating device | |
| CN215347066U (en) | Novel ceramic atomizing core | |
| CN115804476A (en) | Atomizing core, atomizer and aerosol generating device | |
| WO2022062354A1 (en) | Heating assembly and aerosol-forming device | |
| CN114788586A (en) | Ceramic, atomizing core and atomizer | |
| CN114794565A (en) | Heating element, atomization component and electronic atomization device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |