CN115712227A - Optical proximity effect correction method and device based on evanescent wave field strong attenuation characteristic modulation mode - Google Patents

Abstract

The present application discloses a method and device for correcting optical proximity effects based on modulation of evanescent wave field intensity attenuation characteristics, and relates to the technical field of lithographic resolution enhancement. The method includes: by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, determining the effective range of the near-field optical proximity effect on the target pattern; using the target pattern as the input image of the surface plasmon lithography, determining Under preset exposure conditions, the accuracy of the target exposure pattern in the photoresist corresponding to the target pattern and the target compensation exposure dose; determine the area on the target pattern that needs to be compensated and modulated, and based on the target compensation exposure dose in the effective range of the near field The optical proximity effect is compensated and corrected to obtain the corrected correction pattern; the correction pattern is used as the input image, and the contour of the correction exposure pattern extracted from the photoresist under the preset exposure conditions is compared to determine the accuracy and accuracy of the correction exposure pattern Cost function curve data.

Description

Optical proximity effect correction method based on evanescent wave field intensity attenuation characteristic modulation and its device

technical field

The present application relates to the technical field of lithographic resolution enhancement, and in particular to a method and device for correcting optical proximity effects based on modulation of evanescent wave field intensity attenuation characteristics.

Background technique

Photolithography technology is one of the key technologies in the manufacturing process of very large scale integrated circuits. With the continuous increase of chip integration and the continuous reduction of feature size, the requirements for lithography resolution and image quality after exposure are also getting higher and higher. As a promising next-generation lithography technology, surface plasmon lithography (Plasmonic lithography) has the advantages of breaking the resolution diffraction limit existing in traditional optical lithography and not requiring a physical mask. The development of high-resolution, low-cost, high-efficiency, and large-area nanolithography technology provides an important method and technical approach.

At present, it has been verified through experiments that surface plasmon lithography technology can meet the resolution requirements of 14 nanometers (nm) and below technology nodes in the field of micro-nano manufacturing, but with the further reduction of the feature size of integrated circuits, the near-field optical proximity effect ( Near-field optical proximity effect (near-field OPE) also becomes more serious, which will not only greatly reduce the resolution of the exposure pattern, but also sharply increase the distortion of the final exposure pattern in the photoresist, resulting in manufacturing without The physical performance and electrical characteristics of the nano-devices produced have deviations, which in turn affect the function and yield of the product, and severely limit the practical application of surface plasmon lithography technology. Therefore, in order to meet the high-performance requirements for the size and quality of nanostructured devices in integrated circuits, near-field OPE has become an important problem to be solved in surface plasmon lithography technology.

In order to further improve the exposure performance of the surface plasmon lithography technology and solve the influence of the near-field OPE phenomenon on the quality of the exposure pattern in the photoresist, researchers have proposed a variety of resolution enhancement technologies (Resolution enhancement technology, RET), mainly including optical Optical proximity correction (Optical proximity correction) technology, Off axis illumination (OAI) technology, Phase shifting masks (PSM) technology, Sub-resolution assist feature, SRAF) technology, etc.

Although these resolution enhancement technologies can improve the quality of the exposure pattern in the photoresist to a certain extent, there are various problems such as long time consumption, complicated calculation, low accuracy or high price. In addition, with the continuous reduction of nanolithography process technology nodes and the continuous improvement of target patterns and densities, complex 2D patterns have become the main type of nano-process layout, and using these traditional resolution enhancement technologies, using surface plasmons It is difficult for a photolithography system to obtain a good exposure pattern on a silicon wafer while ensuring high resolution. Therefore, a method for improving the imaging resolution and exposure pattern fidelity of the surface plasmon lithography system is urgently needed.

Contents of the invention

The purpose of this application is to provide an optical proximity effect correction method and device based on the modulation of evanescent wave field intensity attenuation characteristics, so as to solve the problem of low imaging resolution and exposure pattern fidelity of the existing surface plasmon lithography system. question.

In the first aspect, the present application provides an optical proximity effect correction method based on modulation of evanescent wave field intensity attenuation characteristics, the method comprising:

Model and analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography, and determine the point spread function;

Analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern;

Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, the effective range of the near-field optical proximity effect on the target pattern is determined;

Using the target pattern as an input image of the surface plasmon lithography, determining the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions;

Determining an area on the target pattern that needs to be compensated and modulated, and compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern;

The correction pattern is used as an input image, and the contours of the correction exposure pattern in the photoresist extracted under the preset exposure conditions are compared to determine the accuracy and cost function curve data of the correction exposure pattern.

In the case of adopting the above technical solution, the optical proximity effect correction method based on the modulation mode of the evanescent wave field intensity attenuation characteristic provided by the embodiment of the present application can analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography Carry out modeling analysis to determine the point spread function; analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern ; Based on the corresponding relationship between the field intensity attenuation characteristics and the exposure pattern quality, by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, determine the effective range of the near-field optical proximity effect on the target pattern ; Using the target pattern as the input image of the surface plasmon lithography, determine the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions; determine Compensating and correcting the near-field optical proximity effect based on the target compensation exposure dose within the effective range of the target pattern to obtain a corrected correction pattern; As an input image, the profile of the correction exposure pattern in the photoresist extracted under the preset exposure conditions is compared to determine the accuracy and cost function curve data of the correction exposure pattern. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the quality of the exposure pattern in each process step of the surface plasmon lithography process. It can also further verify the significant role played by the unique surface evanescent wave attenuation characteristics of surface plasmon lithography in the generation of the near-field optical proximity effect, providing a basis for reducing feature size errors and improving the uniformity of exposure pattern quality. A practical solution with strong practical applicability. It can not only effectively improve the calibration accuracy of the exposure graphic quality, but also effectively reduce the complexity of the simulation and improve the calculation efficiency. The practical applicability is very strong, which is very important for further It is of great significance to carry out the research of surface plasmon lithography system with low cost, large area and high exposure quality.

In a possible implementation manner, the exposure pattern of the two-dimensional pattern formed in the photoresist is analyzed based on the point spread function, and the correspondence between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern is determined. relationships, including:

Establishing a lithography imaging model and a photoresist imaging model of the surface plasmon lithography;

determining the correspondence between exposure dose and exposure time based on the point spread function;

determining the exposure pattern of the two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time;

Based on the photolithographic imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern, the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern is determined.

In a possible implementation manner, the target pattern is used as the input image of the surface plasmon lithography, and the target exposure pattern in the photoresist corresponding to the target pattern is determined under preset exposure conditions Accurate and targeted compensation exposure dose, including:

using the target pattern as an input image of the surface plasmon lithography, and extracting the contour of the target exposure pattern in the photoresist under preset exposure conditions;

An error value between the target pattern and the contour of the target exposure pattern is determined, and an accuracy of the target exposure pattern and a target compensation exposure dose are determined based on the error value.

In a possible implementation manner, the corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality increases with the field intensity attenuation characteristic. Variety.

In a possible implementation, based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, the near field The effective scope of the optical proximity effect on target graphics, including:

Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, determine the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range for quantitative analysis, and determine the relationship between the spatial frequency in the photoresist and the near field field intensity attenuation length Correspondence;

Based on the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength, the effective range of the near-field optical proximity effect on the target pattern is determined.

In a possible implementation manner, the determination of the area on the target pattern that needs to be compensated and modulated is performed to compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range, Get the corrected correction graphics, including:

Determine the area on the target graphic that needs to be compensated and modulated by means of point-line-surface, use a gradient descent algorithm to compensate and correct the near-field optical proximity effect within the effective range, and obtain the corrected Correct graphics.

In a possible implementation manner, the corresponding relationship between the exposure dose and the exposure time includes:

其中，所述psf表示所述点扩展函数；所述N_exp表示总像素数，所述B_n(x_i,y_j)表示所述目标图形的二位值像素化矩阵；所述I_psf(x-x_i,y-y_j)表示所述光刻胶表面的光学场强分布；所述t_n表示曝光时间，所述D_arb(x,y)表示所述曝光剂量。

Wherein, the psf represents the point spread function; the N _exp represents the total number of pixels, and the B _n ( _xi , y _j ) represents the binary value pixelated matrix of the target graphic; the I _psf ( xx _i , yy _j ) represent the optical field intensity distribution on the surface of the photoresist; the t _n represents the exposure time, and the _Darb (x, y) represents the exposure dose.

In a possible implementation, the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength includes:

Wherein, the k _z (z) represents the internal spatial frequency of the photoresist, and the β(z) represents the attenuation length of the near-field field strength.

In a possible implementation manner, the establishment of the lithography imaging model and the photoresist imaging model of the surface plasmon lithography includes:

Obtaining the three-dimensional field intensity distribution data on the surface of the photoresist;

The photoresist imaging model and the photoresist imaging model are established based on the three-dimensional field intensity distribution data.

In the second aspect, the present application also provides an optical proximity effect correction device based on modulation of evanescent wave field strength attenuation characteristics, and the device is used to realize the modulation based on evanescent wave field strength attenuation characteristics described in any one of the first aspects. The optical proximity effect correction method of formula, said device comprises:

The first determination module is used to model and analyze the three-dimensional field strength distribution data reaching the surface of the photoresist in surface plasmon lithography, and determine the point spread function;

The second determination module is used to analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern;

The third determination module is used to determine the near-field optical proximity effect by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern. The effective scope of the target graphics;

The fourth determination module is configured to use the target pattern as the input image of the surface plasmon lithography, and determine the accuracy and accuracy of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions. target compensation exposure dose;

The fifth determination module is configured to determine the area on the target pattern that needs to be compensated and modulated, and compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain the corrected correct graphics;

The sixth determining module is used to use the correction pattern as an input image, and compare the contours of the correction exposure pattern extracted in the photoresist under the preset exposure conditions to determine the accuracy of the correction exposure pattern and cost function curve data.

In a possible implementation manner, the second determination module includes:

Establishing a sub-module for establishing a lithography imaging model and a photoresist imaging model of the surface plasmon lithography;

The first determination submodule is used to determine the corresponding relationship between exposure dose and exposure time based on the point spread function;

The second determining submodule is used to determine the exposure pattern of the two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time;

The third determination sub-module is used to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern based on the photolithography imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern .

In a possible implementation manner, the fourth determination module includes:

An extraction submodule, configured to use the target pattern as an input image of the surface plasmon lithography, and extract the outline of the target exposure pattern in the photoresist under preset exposure conditions;

The fourth determination sub-module is configured to determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and the target compensation exposure dose based on the error value.

In a possible implementation manner, the corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality increases with the field intensity attenuation characteristic. Variety.

In a possible implementation manner, the third determination module includes:

The fifth determination sub-module is used to determine the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range for quantitative analysis based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, and determine the spatial frequency in the photoresist The corresponding relationship with the attenuation length of the near-field field strength;

The sixth determination sub-module is used to determine the effective range of the near-field optical proximity effect on the target pattern based on the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength.

In a possible implementation manner, the fifth determination module includes:

The seventh determination sub-module is used to determine the area on the target graph that needs to be compensated and modulated by means of point-line-surface, and uses a gradient descent algorithm to compensate the near-field optical proximity effect within the effective range of action rectify to obtain the rectified correction graph.

In a possible implementation manner, the corresponding relationship between the exposure dose and the exposure time includes:

其中，所述psf表示所述点扩展函数；所述N_exp表示总像素数，所述B_n(x_i,y_j)表示所述目标图形的二位值像素化矩阵；所述I_psf(x-x_i,y-y_j)表示所述光刻胶表面的光学场强分布；所述t_n表示曝光时间，所述D_arb(x,y)表示所述曝光剂量。

Wherein, the psf represents the point spread function; the N _exp represents the total number of pixels, and the B _n ( _xi , y _j ) represents the binary value pixelated matrix of the target graphic; the I _psf ( xx _i , yy _j ) represent the optical field intensity distribution on the surface of the photoresist; the t _n represents the exposure time, and the _Darb (x, y) represents the exposure dose.

In a possible implementation, the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength includes:

Wherein, the k _z (z) represents the internal spatial frequency of the photoresist, and the β(z) represents the attenuation length of the near-field field strength.

In a possible implementation manner, the establishing submodule includes:

an acquisition unit, configured to acquire the three-dimensional field intensity distribution data on the surface of the photoresist;

A building unit, configured to build the photolithographic imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

The beneficial effect of the optical proximity effect correction device based on the modulation method of evanescent wave field strength attenuation characteristics provided by the second aspect is the same as that of the modulation method based on the evanescent wave field strength attenuation characteristics described in the first aspect or any possible implementation of the first aspect. The beneficial effects of the optical proximity effect correction method are the same, and will not be repeated here.

Description of drawings

The drawings described here are used to provide a further understanding of the application and constitute a part of the application. The schematic embodiments and descriptions of the application are used to explain the application and do not constitute an improper limitation to the application. In the attached picture:

Fig. 1 shows a schematic flowchart of an optical proximity effect correction method based on evanescent wave field intensity attenuation characteristic modulation provided by an embodiment of the present application;

Fig. 2 shows a schematic flowchart of another optical proximity effect correction method based on evanescent wave field intensity attenuation characteristic modulation provided by the embodiment of the present application;

Fig. 3 shows a schematic diagram of the near-field optical proximity effect of a surface plasmon lithography technology center provided by an embodiment of the present application;

FIG. 4 shows a schematic diagram of the influence of a near-field optical proximity effect on the quality of exposure patterns provided by the embodiment of the present application;

FIG. 5 shows a schematic diagram of a target pattern provided by an embodiment of the present application and a comparison between the target exposure pattern and the target pattern in the photoresist obtained under preset exposure conditions;

FIG. 6 shows a schematic diagram of an exposure dose compensation map provided by an embodiment of the present application;

FIG. 7 shows a schematic diagram of a correction pattern provided by the embodiment of the present application and the comparison between the final exposure pattern in the photoresist and the original pattern obtained;

FIG. 8 shows a schematic structural diagram of an optical proximity effect correction device based on modulation of evanescent wave field intensity attenuation characteristics provided by an embodiment of the present application.

Detailed ways

In order to clearly describe the technical solutions of the embodiments of the present application, in the embodiments of the present application, words such as "first" and "second" are used to distinguish the same or similar items with basically the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their sequence is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the number and execution order, and words such as "first" and "second" do not necessarily limit the difference.

It should be noted that, in this application, words such as "exemplary" or "for example" are used as examples, illustrations or illustrations. Any embodiment or design described herein as "exemplary" or "for example" is not to be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete manner.

In this application, "at least one" means one or more, and "multiple" means two or more. "And/or" describes the association relationship of associated objects, indicating that there may be three types of relationships, for example, A and/or B, which can mean: A exists alone, A and B exist simultaneously, and B exists alone, where A, B can be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, at least one (one) of a, b or c may represent: a, b, c, a combination of a and b, a combination of a and c, a combination of b and c, or a, b and c Combination, where a, b, c can be single or multiple.

At present, it has been verified through experiments that surface plasmon lithography technology can meet the resolution requirements of 14 nanometers (nm) and below technology nodes in the field of micro-nano manufacturing, but with the further reduction of the feature size of integrated circuits, the near-field optical proximity effect ( Near-field optical proximity effect (near-field OPE) also becomes more serious, which will not only greatly reduce the resolution of the exposure pattern, but also sharply increase the distortion of the final exposure pattern in the photoresist, resulting in manufacturing without The physical performance and electrical characteristics of the nano-devices produced have deviations, which in turn affect the function and yield of the product, and severely limit the practical application of surface plasmon lithography technology. Therefore, in order to meet the high-performance requirements for the size and quality of nanostructured devices in integrated circuits, near-field OPE has become an important problem to be solved in surface plasmon lithography technology.

In order to further improve the exposure performance of the surface plasmon lithography technology and solve the influence of the near-field OPE phenomenon on the quality of the exposure pattern in the photoresist, researchers have proposed a variety of resolution enhancement technologies (Resolution enhancement technology, RET), mainly including optical Optical proximity correction (OPC) technology, Off axis illumination (OAI) technology, Phaseshifting masks (PSM) technology, Sub-resolution assist feature (SRAF) technology wait.

Although these resolution enhancement technologies can improve the quality of the exposure pattern in the photoresist to a certain extent, there are various problems such as long time consumption, complicated calculation, low accuracy or high price. In addition, with the continuous reduction of nanolithography process technology nodes and the continuous improvement of target patterns and densities, complex 2D patterns have become the main type of nano-process layout, and using these traditional resolution enhancement technologies, using surface plasmons It is difficult for a photolithography system to obtain a good exposure pattern on a silicon wafer while ensuring high resolution.

Therefore, it is necessary to carry out in-depth research on the generation mechanism and physical calculation of the near-field OPE existing in the surface plasmon lithography system, so as to propose a solution that can accurately and efficiently solve this problem, so as to further improve the surface The purpose of the imaging resolution of the plasma lithography system and the fidelity of the exposure pattern is to meet the requirements of the integrated circuit process technology node for the imaging accuracy of the surface plasmon lithography.

The current traditional pixel-based two-dimensional image optical proximity effect correction optimization method belongs to the "rule-based" optical proximity effect correction method. The specific content is to find out the spatial image after quantitative analysis of the convolutional spatial image (Aerial image) imaging result between the point spread function (PSF) of surface plasmon lithography and the binary image of the target pattern. In order to improve the corner rounding, line width deviation and line end shrinkage of the exposed pattern in the photoresist, a method is proposed to arbitrarily modify the geometric distribution of the original target pattern. and other graphic distortion problems.

However, since this method is a “rule-based” optical proximity effect correction method based on the imaging characteristics of the aerial image after the exposure of the target pattern and the geometric information of the local environment, although it is very easy to implement, it can only be used for imaging Results The image distortion problem in the local area is corrected, and with the increasing complexity and density of the target image, it is difficult to achieve global image correction by this method. More importantly, since the quality of the exposure pattern in the final photoresist will also be affected by the development time during the development process and the chemical reaction between the developer and the photoresist, the optical proximity effect correction based only on the aerial image imaging results method, the error between the exposure pattern in the final photoresist and the target pattern still exists after correction, so the accuracy of this method still needs to be improved.

In order to solve the above problems, this application quantitatively characterizes the near-field enhancement effect unique to surface plasmon lithography, and reveals the generation mechanism of near-field OPE from the physical source, as well as the complex attenuation characteristics and The influence of the asymmetry of the field distribution on the edge feature size of the exposure pattern, and starting from the mathematical relationship between the lithography parameters and the index that characterizes the fidelity of the lithography pattern, through the joint optimization of the exposure dose and the target pattern, proposed An optical proximity effect correction optimization method based on the modulation of evanescent wave field intensity attenuation characteristics. Compared with the traditional optical proximity effect correction optimization method, this method is an optimization method based on the principle of exposure dose compensation, which can further improve Optimizing the degree of freedom can more effectively improve the imaging and exposure pattern quality of the surface plasmon lithography system, provide a technical basis for mass production of low-cost, high-resolution and high-fidelity arbitrary two-dimensional nano-patterns, and provide a basis for micro-nano Provide theoretical support for the development of lithography processing technology.

Fig. 1 shows a schematic flowchart of an optical proximity effect correction method based on evanescent wave field strength attenuation characteristic modulation provided by an embodiment of the present application. As shown in Fig. 1 , the evanescent wave field strength attenuation characteristic modulation based on The optical proximity effect correction method of formula includes:

Step 101: Modeling and analyzing the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography to determine a point spread function.

Step 102: Analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

In this application, the lithographic imaging model and photoresist imaging model of the surface plasmon lithography can be established; the corresponding relationship between the exposure dose and the exposure time is determined based on the point spread function; based on the exposure dose and the exposure time Determine the exposure pattern of the two-dimensional pattern formed in the photoresist according to the corresponding relationship; based on the photolithographic imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern, determine the exposure pattern of the evanescent wave Correspondence between field intensity attenuation characteristics and exposure pattern quality.

Wherein, the corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

Step 103: Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, determine the effectiveness of the near-field optical proximity effect on the target pattern. scope of action.

In this application, based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range can be determined for quantitative analysis, and the spatial frequency in the photoresist and the near field frequency can be determined. The corresponding relationship between the attenuation length of the field intensity; based on the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field intensity, determine the effective range of the near-field optical proximity effect on the target pattern.

Step 104: Using the target pattern as the input image of the surface plasmon lithography, determine the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions .

In the present application, the target pattern can be used as the input image of the surface plasmon lithography, and the contour of the target exposure pattern in the photoresist is extracted under preset exposure conditions; the target pattern and the The accuracy of the target exposure pattern and the target compensation exposure dose are determined based on the error value.

Step 105: Determine the area on the target pattern that needs to be compensated and modulated, and compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern.

In this application, the area on the target graphic that needs to be compensated and modulated can be determined in a point-line-surface manner, and the gradient descent algorithm is used to compensate and correct the near-field optical proximity effect within the effective range of action. The corrected correction graph is obtained.

Step 106: Using the correction pattern as an input image, and comparing the contours of the correction exposure pattern extracted in the photoresist under the preset exposure conditions, to determine the accuracy and cost function curve of the correction exposure pattern data.

In summary, the three-dimensional field strength distribution data reaching the surface of the photoresist in surface plasmon lithography can be modeled and analyzed to determine the point spread function; Analyze the exposure pattern of the three-dimensional pattern to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, by analyzing the The field strength attenuation characteristics of the wave are modeled and analyzed to determine the effective range of the near-field optical proximity effect on the target pattern; the target pattern is used as the input image of the surface plasmon lithography, and the target pattern is determined under the preset exposure conditions. The accuracy of the target exposure pattern in the photoresist corresponding to the target pattern and the target compensation exposure dose; determine the area on the target pattern that needs to be compensated and modulated, and within the effective range based on the target compensation exposure dose Compensating and correcting the near-field optical proximity effect to obtain a corrected correction pattern; using the correction pattern as an input image, and extracting the contour of the correction exposure pattern in the photoresist under the preset exposure conditions A comparison is made to determine the accuracy and cost function curve data of the corrected exposure pattern. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the quality of the exposure pattern in each process step of the surface plasmon lithography process. It can also further verify the significant role played by the unique surface evanescent wave attenuation characteristics of surface plasmon lithography in the generation of the near-field optical proximity effect, providing a basis for reducing feature size errors and improving the uniformity of exposure pattern quality. A practical solution with strong practical applicability. It can not only effectively improve the calibration accuracy of the exposure graphic quality, but also effectively reduce the complexity of the simulation and improve the calculation efficiency. The practical applicability is very strong, which is very important for further It is of great significance to carry out the research of surface plasmon lithography system with low cost, large area and high exposure quality.

Fig. 2 shows a schematic flowchart of another optical proximity effect correction method based on the evanescent wave field intensity attenuation characteristic modulation method provided by the embodiment of the present application. As shown in Fig. 2, the evanescent wave field intensity attenuation characteristic modulation method Optical proximity correction methods include:

Step 201: Modeling and analyzing the three-dimensional field strength distribution data reaching the surface of the photoresist in surface plasmon lithography to determine a point spread function.

In this application, the three-dimensional field strength distribution that finally reaches the surface of the photoresist after passing through the nano-bow-tie aperture structure of the focusing element in surface plasmon lithography can be modeled and analyzed, and it can be used as the core of the surface plasmon lithography system. Point spread function (PSF).

Step 202: Analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

In this application, the near-field optical proximity effect (near- Field OPE) generation mechanism.

Specifically, the specific implementation of the above-mentioned step 202 includes the following sub-steps:

Sub-step A1: establishing a lithography imaging model and a photoresist imaging model of the surface plasmon lithography.

The implementation process of the above sub-step A1 may include: by acquiring the three-dimensional field intensity distribution data on the surface of the photoresist; establishing the photolithographic imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data .

Sub-step A2: Determine the corresponding relationship between exposure dose and exposure time based on the point spread function.

When the surface plasmon lithography system is performing arbitrary pattern exposure, the exposure dose distribution required for the final exposure pattern in the photoresist is determined by the relationship between the point spread function (PSF), exposure time and the binary value pixelation matrix of the target pattern It is determined by the convolution relationship of the exposure dose modulation map, that is, it is determined by the corresponding relationship between the exposure dose and the exposure time, wherein the corresponding relationship between the exposure dose and the exposure time includes:

其中，所述psf表示所述点扩展函数；所述N_exp表示总像素数，所述B_n(x_i,y_j)表示所述目标图形的二位值像素化矩阵；所述I_psf(x-x_i,y-y_j)表示所述光刻胶表面的光学场强分布；所述t_n表示曝光时间，所述D_arb(x,y)表示所述曝光剂量。

Wherein, the psf represents the point spread function; the N _exp represents the total number of pixels, and the B _n ( _xi , y _j ) represents the binary value pixelated matrix of the target graphic; the I _psf ( xx _i , yy _j ) represent the optical field intensity distribution on the surface of the photoresist; the t _n represents the exposure time, and the _Darb (x, y) represents the exposure dose.

Sub-step A3: Determine the exposure pattern of the two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time.

In the present application, only when the exposure dose in the photoresist reaches above the critical dose (Thresholddose) of the photoresist, can the exposure pattern be obtained.

Fig. 3 shows a schematic diagram of the near-field optical proximity effect of a surface plasmon lithography technology center provided by the embodiment of the present application. As shown in Fig. 3, the vertical axis represents the exposure dose, and the background is added After the background effect, the feature size changes from W to W±Δ. Further, the optical proximity effect can be regarded as a background effect that can affect the exposure dose, and then the characteristics of the target pattern Dimension W makes a difference.

Sub-step A4: Based on the photolithographic imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern, determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern.

The corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

Fig. 4 shows a schematic diagram of the impact of a near-field optical proximity effect on the quality of the exposure pattern provided by the embodiment of the present application. As shown in Fig. 4, scanning is performed based on the isointensity contour of PSF (Isointensity contour of PSF) Scanning) to expose the target pattern (Target pattern) to obtain the exposure pattern (Pattern profile) of the two-dimensional pattern formed in the photoresist, and further analyze the sample cross-section screenshot (Cross-sectionof pattern profile) of the exposure pattern , the vertical axis represents the dose (Dose), wherein, when the exposure dose in the photoresist reaches above the critical dose of the photoresist (Threshold dose), the exposure pattern can be obtained, due to the point of surface plasmon lithography The spread function (PSF) has relatively complex field strength distribution and field strength attenuation characteristics, and is affected by the geometric characteristics of the nano-bow-tie aperture structure. The impact on the quality of the final exposure pattern in the resist is also more complicated. For example, there are real problems such as corner rounding, line width deviation, and line end indentation, and it is also asymmetrical. It can thus be determined that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality changes with the field intensity attenuation characteristic.

Step 203: Based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, determine the field intensity attenuation characteristics corresponding to the evanescent wave in the near-field range for quantitative analysis, and determine the spatial frequency and near-field field strength in the photoresist Correspondence of attenuation length.

In this application, the field intensity attenuation characteristics of the evanescent wave in the photoresist can be modeled and analyzed to determine the effective range of the near-field optical proximity effect on the target pattern. Due to the point spread function (PSF) of surface plasmon lithography ) determines the field strength distribution in the photoresist. In the near-field range, the PSF is mainly composed of evanescent waves, and the near-field attenuation characteristics of the evanescent waves will cause the rapid loss of high-frequency energy carried by them, and Due to the different proximity effects generated under different feature sizes and patterns, the high-frequency loss of the spectrum after filtering by the exposure system is also different, and the high-frequency imaging information lost is also different, which leads to different optical differences in the exposed patterns. proximity distortion. Therefore, the near-field attenuation characteristics of the evanescent wave can be quantitatively analyzed, and then the relationship of high-frequency information attenuation with exposure depth can be established. According to the exposure model of the near-field lithography system, there is the following relationship between the spatial frequency (spatial frequency, kz(z)) in the photoresist and the near-field field strength attenuation length (decaylength, β(z)):

Wherein, the k _z (z) represents the internal spatial frequency of the photoresist, and the β(z) represents the attenuation length of the near-field field strength.

Therefore, it can be determined that the physical mechanism of the near-field optical proximity effect in the surface plasmon lithography system is mainly due to the near-field attenuation characteristics of the evanescent wave in the photoresist that rapidly decays with the increase of the exposure depth, resulting in its carrying It is caused by the loss of high-frequency information.

It should be noted that this physical mechanism is completely different from the loss of high-frequency information caused by the diffraction limit or the physical characteristics of the exposure element/structure in the traditional optical lithography system, and the discovery of this physical mechanism can provide a basis for proposing a Theoretical support is provided by the optical proximity effect correction method which effectively improves the quality of the exposure pattern fundamentally.

Step 204: Based on the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength, determine the effective range of the near-field optical proximity effect on the target pattern.

Step 205: Using the target pattern as an input image of the surface plasmon lithography, and extracting the contour of the target exposure pattern in the photoresist under preset exposure conditions.

Wherein, the preset exposure condition is also the optimal exposure condition, and the embodiment of the present application does not limit its specific value, which can be adjusted according to actual application scenarios.

Fig. 5 shows a target pattern provided by the embodiment of the present application and a schematic diagram of comparison between the target exposure pattern and the target pattern in the photoresist obtained under preset exposure conditions, as shown in Fig. 5(a) As for the target pattern, FIG. 5(b) shows the target pattern (Target pattern) is exposed, and the profile of the target exposure pattern (Pattern profile) formed in the photoresist under the optimal exposure condition.

Step 206: Determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and the target compensation exposure dose based on the error value.

In this application, in conjunction with Fig. 5, the error value between the outline of the target exposure pattern and the target pattern can be compared to calculate the accuracy of the final exposure pattern, that is, the target exposure pattern, and obtain the exposure dose modulation required Compensation map, through the compensation map to determine the target compensation exposure dose.

FIG. 6 shows a schematic diagram of an exposure dose compensation map provided by an embodiment of the present application. As shown in FIG. 6 , the compensation exposure dose corresponding to each position requiring exposure compensation can be determined according to the exposure dose compensation map.

Step 207: Determine the area on the target pattern that needs to be compensated and modulated, and compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range to obtain a corrected correction pattern.

In this application, the area on the target graphic that needs to be compensated and modulated can be determined in a point-line-surface manner, and the gradient descent algorithm is used to compensate and correct the near-field optical proximity effect within the effective range of action. The corrected correction graph is obtained.

Step 208: Taking the correction pattern as an input image, and comparing the contours of the correction exposure pattern extracted in the photoresist under the preset exposure conditions, to determine the accuracy and cost function curve of the correction exposure pattern data.

In this application, the correction pattern can be used as the input image, and the profile of the final exposure pattern in the photoresist obtained under the optimal exposure conditions is compared with the original target pattern to calculate the accuracy and cost function of the final exposure pattern Curve, this application is based on the "hybrid" optical proximity effect correction optimization method based on the principle of exposure dose compensation, which can not only achieve precise control of exposure dose, but also effectively save optimization time, and has strong practical applications sex. Therefore, compared with other optical proximity effect correction optimization methods, the optical proximity effect correction optimization optimization method proposed in this application is more suitable for complex two-dimensional pattern processing and large-area exposure patterns, and further improves surface plasmon lithography. Practical applicability of the process.

Figure 7 shows a schematic diagram of a correction pattern provided by the embodiment of the present application and the comparison between the final exposure pattern in the photoresist and the original pattern obtained, as shown in Figure 7 (a) is a correction pattern, Figure 7 (b) is a schematic diagram of a target pattern (Target pattern), that is, an original pattern, and a target pattern (Pattern profile) formed in the photoresist under optimal exposure conditions, that is, the outline of a final exposure pattern.

The purpose of this application is to propose an optical proximity effect correction optimization method capable of quantitatively analyzing the physical root of the near-field optical proximity effect in the surface plasmon lithography process and accurately correcting it. By establishing a three-dimensional lithography imaging model and a photoresist imaging model of surface plasmon lithography, quantitatively analyze the influence of the field intensity distribution of the point spread function and its attenuation characteristics on the quality of the exposure pattern in the photoresist, and reveal the near-field optical proximity effect The physical origin is mainly due to the rapid loss of high-frequency information due to the continuous increase of the evanescent wave in the photoresist along the exposure depth. And put forward a calculation formula of attenuation length that changes with exposure depth, quantitatively analyze the influence range of evanescent wave field intensity attenuation characteristics on target graphics, and propose an optical proximity effect correction based on the principle of exposure dose compensation Optimization.

In summary, the optical proximity effect correction method based on the modulation of evanescent wave field intensity attenuation characteristics provided by the embodiment of the present application can model the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography Analyze and determine the point spread function; analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; The corresponding relationship between the above-mentioned field intensity attenuation characteristics and the quality of the exposure pattern, by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, determine the effective range of the near-field optical proximity effect on the target pattern; The target pattern is used as the input image of the surface plasmon lithography, and the accuracy and target compensation exposure dose of the target exposure pattern in the photoresist corresponding to the target pattern are determined under preset exposure conditions; the target is determined In the area where compensation modulation is required on the graph, the near-field optical proximity effect is compensated and corrected based on the target compensation exposure dose within the effective range to obtain a corrected correction graph; the correction graph is used as an input image , and compare the contours of the corrected exposure patterns extracted in the photoresist under the preset exposure conditions to determine the accuracy and cost function curve data of the corrected exposure patterns. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the quality of the exposure pattern in each process step of the surface plasmon lithography process. It can also further verify the significant role played by the unique surface evanescent wave attenuation characteristics of surface plasmon lithography in the generation of the near-field optical proximity effect, providing a basis for reducing feature size errors and improving the uniformity of exposure pattern quality. A practical solution with strong practical applicability. It can not only effectively improve the calibration accuracy of the exposure graphic quality, but also effectively reduce the complexity of the simulation and improve the calculation efficiency. The practical applicability is very strong, which is very important for further It is of great significance to carry out the research of surface plasmon lithography system with low cost, large area and high exposure quality.

Fig. 8 shows a schematic structural diagram of an optical proximity effect correction device based on the modulation of the evanescent wave field strength attenuation characteristic provided by the embodiment of the present application, which is used to realize any one of the evanescent wave field strength attenuation based on the present application The optical proximity effect correction method of the characteristic modulation type, as shown in FIG. 8 , the optical proximity effect correction device 300 based on the evanescent wave field strength attenuation characteristic modulation type includes:

The first determination module 301 is used to model and analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography, and determine the point spread function;

The second determining module 302 is configured to analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern;

The third determination module 303 is configured to determine the near-field optical proximity effect by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern The effective range of action on the target graphic;

The fourth determining module 304 is configured to use the target pattern as the input image of the surface plasmon lithography, and determine the accuracy of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and target compensation exposure dose;

The fifth determining module 305 is configured to determine the area on the target pattern that needs to be compensated and modulated, and compensate and correct the near-field optical proximity effect based on the target compensation exposure dose within the effective range, and obtain the corrected correction graphics;

The sixth determining module 306 is configured to use the correction pattern as an input image, and compare the contours of the correction exposure pattern extracted in the photoresist under the preset exposure conditions to determine the accuracy of the correction exposure pattern. degree and cost function curve data.

In a possible implementation manner, the second determination module includes:

Establishing a sub-module for establishing a lithography imaging model and a photoresist imaging model of the surface plasmon lithography;

The first determination submodule is used to determine the corresponding relationship between exposure dose and exposure time based on the point spread function;

The second determining submodule is used to determine the exposure pattern of the two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time;

The third determination sub-module is used to determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern based on the photolithography imaging model and the photoresist imaging model, combined with the exposure pattern of the two-dimensional pattern .

In a possible implementation manner, the fourth determination module includes:

An extraction submodule, configured to use the target pattern as an input image of the surface plasmon lithography, and extract the outline of the target exposure pattern in the photoresist under preset exposure conditions;

The fourth determination sub-module is configured to determine an error value between the target pattern and the contour of the target exposure pattern, and determine the accuracy of the target exposure pattern and the target compensation exposure dose based on the error value.

In a possible implementation manner, the corresponding relationship between the field intensity attenuation characteristic and the exposure pattern quality is that the optical proximity effect has the field intensity attenuation characteristic, and the exposure pattern quality increases with the field intensity attenuation characteristic. Variety.

In a possible implementation manner, the third determination module includes:

The fifth determination sub-module is used to determine the field intensity attenuation characteristics corresponding to the evanescent wave in the near field range for quantitative analysis based on the corresponding relationship between the field intensity attenuation characteristics and the quality of the exposure pattern, and determine the spatial frequency in the photoresist The corresponding relationship with the attenuation length of the near-field field strength;

The sixth determination sub-module is used to determine the effective range of the near-field optical proximity effect on the target pattern based on the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength.

In a possible implementation manner, the fifth determination module includes:

The seventh determination sub-module is used to determine the area on the target graph that needs to be compensated and modulated by means of point-line-surface, and uses a gradient descent algorithm to compensate the near-field optical proximity effect within the effective range of action rectify to obtain the rectified correction graph.

In a possible implementation manner, the corresponding relationship between the exposure dose and the exposure time includes:

其中，所述psf表示所述点扩展函数；所述N_exp表示总像素数，所述B_n(x_i,y_j)表示所述目标图形的二位值像素化矩阵；所述I_psf(x-x_i,y-y_j)表示所述光刻胶表面的光学场强分布；所述t_n表示曝光时间，所述D_arb(x,y)表示所述曝光剂量。

Wherein, the psf represents the point spread function; the N _exp represents the total number of pixels, and the B _n ( _xi , y _j ) represents the binary value pixelated matrix of the target graphic; the I _psf ( xx _i , yy _j ) represent the optical field intensity distribution on the surface of the photoresist; the t _n represents the exposure time, and the _Darb (x, y) represents the exposure dose.

In a possible implementation, the corresponding relationship between the spatial frequency in the photoresist and the attenuation length of the near-field field strength includes:

Wherein, the k _z (z) represents the internal spatial frequency of the photoresist, and the β(z) represents the attenuation length of the near-field field strength.

In a possible implementation manner, the establishing submodule includes:

an acquisition unit, configured to acquire the three-dimensional field intensity distribution data on the surface of the photoresist;

A building unit, configured to build the photolithographic imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

The optical proximity effect correction device based on the modulation of evanescent wave field intensity attenuation characteristics provided by the embodiment of the present application can model and analyze the three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasmon lithography, and determine the point expansion function; analyze the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function, and determine the corresponding relationship between the field intensity attenuation characteristics of the evanescent wave and the quality of the exposure pattern; based on the field intensity attenuation characteristics Corresponding relationship with exposure pattern quality, by modeling and analyzing the field intensity attenuation characteristics of the evanescent wave in the photoresist, determine the effective range of the near-field optical proximity effect on the target pattern; use the target pattern as the target pattern The input image of the surface plasmon lithography, determine the accuracy of the target exposure pattern in the photoresist corresponding to the target pattern under preset exposure conditions and the target compensation exposure dose; determine that the target pattern needs to be compensated In the modulated area, the near-field optical proximity effect is compensated and corrected based on the target compensation exposure dose in the effective range to obtain a corrected correction pattern; the correction pattern is used as an input image, and the Under the preset exposure conditions, the profile of the corrected exposure pattern in the photoresist is extracted for comparison, and the accuracy and cost function curve data of the corrected exposure pattern are determined. Since this optimization method is an experimental verification model established based on the lithography imaging model and the photoresist imaging model, it can not only truly reflect the impact of the near-field optical proximity effect on the quality of the exposure pattern in each process step of the surface plasmon lithography process. It can also further verify the significant role played by the unique surface evanescent wave attenuation characteristics of surface plasmon lithography in the generation of the near-field optical proximity effect, providing a basis for reducing feature size errors and improving the uniformity of exposure pattern quality. A practical solution with strong practical applicability. It can not only effectively improve the calibration accuracy of the exposure graphic quality, but also effectively reduce the complexity of the simulation and improve the calculation efficiency. The practical applicability is very strong, which is very important for further It is of great significance to carry out the research of surface plasmon lithography system with low cost, large area and high exposure quality.

An optical proximity effect correction device based on the modulation of evanescent wave field strength attenuation characteristics provided by this application can realize the optical proximity effect based on the modulation of evanescent wave field strength attenuation characteristics as shown in any one of Figures 1 to 7 The correction method is not repeated here to avoid repetition.

Although the present application has been described in conjunction with various embodiments herein, those skilled in the art can understand and realize the disclosure by viewing the drawings, the disclosure, and the appended claims during the implementation of the claimed application. Other Variations of Embodiments. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that these measures cannot be combined to advantage.

Although the application has been described in conjunction with specific features and embodiments thereof, it will be apparent that various modifications and combinations can be made thereto without departing from the spirit and scope of the application. Accordingly, the specification and drawings are merely illustrative of the application as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of this application. Obviously, those skilled in the art can make various changes and modifications to the application without departing from the spirit and scope of the application. In this way, if these modifications and variations of the application fall within the scope of the claims of the application and their equivalent technologies, the application also intends to include these modifications and variations.

Claims (10)

1. A method for correcting optical proximity effect based on evanescent wave field strong attenuation characteristic modulation mode is characterized by comprising the following steps:

carrying out modeling analysis on three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasma photoetching, and determining a point spread function;

analyzing an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function, and determining a corresponding relation between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern;

based on the corresponding relation between the field intensity attenuation characteristic and the quality of the exposure pattern, determining the effective action range of the near-field optical proximity effect on the target pattern by carrying out modeling analysis on the field intensity attenuation characteristic of the evanescent wave in the photoresist;

taking the target pattern as an input image of the surface plasma photoetching, and determining the accuracy of the target exposure pattern in the photoresist and the target compensation exposure dose corresponding to the target pattern under a preset exposure condition;

determining an area needing compensation modulation on the target graph, and performing compensation correction on the near-field optical proximity effect based on the target compensation exposure dose within the effective action range to obtain a corrected graph;

and taking the corrected graph as an input image, comparing the outlines of the corrected exposure graphs extracted from the photoresist under the preset exposure condition, and determining the accuracy of the corrected exposure graphs and cost function curve data.

2. The method as claimed in claim 1, wherein the analyzing the exposure pattern of the two-dimensional pattern formed in the photoresist based on the point spread function to determine the corresponding relationship between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern comprises:

establishing a photoetching imaging model and a photoresist imaging model of the surface plasma photoetching;

determining a corresponding relation between exposure dose and exposure time based on the point spread function;

determining an exposure pattern of a two-dimensional pattern formed in the photoresist based on the corresponding relationship between the exposure dose and the exposure time;

and determining the corresponding relation between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern by combining the exposure pattern of the two-dimensional pattern based on the photoetching imaging model and the photoresist imaging model.

3. The method of claim 1, wherein determining the accuracy of the target exposure pattern in the photoresist and the target compensation exposure dose corresponding to the target pattern under a preset exposure condition using the target pattern as an input image of the surface plasma lithography comprises:

taking the target pattern as an input image of the surface plasma photoetching, and extracting the outline of the target exposure pattern in the photoresist under a preset exposure condition;

determining an error value between the target pattern and the contour of the target exposure pattern, determining an accuracy of the target exposure pattern and a target compensation exposure dose based on the error value.

4. The method of claim 1, wherein said field strength attenuation characteristic and exposure pattern quality are related such that said optical proximity effect has said field strength attenuation characteristic, and said exposure pattern quality varies with said field strength attenuation characteristic.

5. The method as claimed in claim 4, wherein the determining the effective action range of the near-field optical proximity effect on the target pattern by performing modeling analysis on the field attenuation characteristic of the evanescent wave in the photoresist based on the corresponding relationship between the field attenuation characteristic and the quality of the exposure pattern comprises:

determining the field intensity attenuation characteristic corresponding to the evanescent wave in the near field range for quantitative analysis based on the corresponding relation between the field intensity attenuation characteristic and the quality of the exposure pattern, and determining the corresponding relation between the space frequency in the photoresist and the near field intensity attenuation length;

and determining the effective action range of the near-field optical proximity effect on the target pattern based on the corresponding relation between the space frequency in the photoresist and the near-field intensity attenuation length.

6. The method of claim 1, wherein the determining the region of the target pattern that needs compensation modulation, and performing compensation correction on the near-field optical proximity effect based on the target compensation exposure dose within the effective action range to obtain a corrected correction pattern comprises:

and determining an area needing compensation modulation on the target graph in a point-line-surface mode, and performing compensation correction on the near-field optical proximity effect by adopting a gradient descent algorithm in the effective action range to obtain the corrected graph.

7. The method of claim 2, wherein said exposure dose to exposure time correspondence comprises:

wherein the psf represents the point spread functionCounting; said N is _exp Represents the total number of pixels, said B _n (x _i ,y _j ) A two-bit valued pixelized matrix representing the target graphic; said I _psf (x-x _i ,y-y _j ) Representing the optical field intensity distribution of the surface of the photoresist; said t is _n Denotes the exposure time, said D _arb (x, y) represents the exposure dose.

8. The method of claim 5, wherein the mapping of spatial frequency within the photoresist to near field strength decay length comprises:

wherein, k is _z (z) represents the spatial frequency within the photoresist, and β (z) represents the near field strength decay length.

9. The method of claim 2, wherein said creating a lithography imaging model and a photoresist imaging model of said surface plasma lithography comprises:

acquiring the three-dimensional field intensity distribution data of the surface of the photoresist;

and establishing the photoetching imaging model and the photoresist imaging model based on the three-dimensional field intensity distribution data.

10. An optical proximity correction device based on evanescent wave field strong attenuation characteristic modulation mode, which is used for realizing the optical proximity correction method based on evanescent wave field strong attenuation characteristic modulation mode as claimed in any one of claims 1 to 9, and the device comprises:

the first determining module is used for carrying out modeling analysis on three-dimensional field intensity distribution data reaching the surface of the photoresist in surface plasma photoetching and determining a point spread function;

the second determination module is used for analyzing an exposure pattern of a two-dimensional pattern formed in the photoresist based on the point spread function and determining the corresponding relation between the field intensity attenuation characteristic of the evanescent wave and the quality of the exposure pattern;

the third determination module is used for determining the effective action range of the near-field optical proximity effect on the target graph by carrying out modeling analysis on the field intensity attenuation characteristic of the evanescent wave in the photoresist based on the corresponding relation between the field intensity attenuation characteristic and the quality of the exposure graph;

a fourth determining module, configured to determine, using the target pattern as an input image of the surface plasma lithography, accuracy of a target exposure pattern in the photoresist corresponding to the target pattern under a preset exposure condition and a target compensation exposure dose;

a fifth determining module, configured to determine an area that needs compensation modulation on the target pattern, and perform compensation correction on the near-field optical proximity effect based on the target compensation exposure dose within the effective action range to obtain a corrected pattern;

and the sixth determining module is used for taking the corrected graph as an input image, comparing the outlines of the corrected exposure graphs extracted from the photoresist under the preset exposure condition, and determining the accuracy of the corrected exposure graphs and cost function curve data.

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