CN115709261A - Single crystal casting and preparation method thereof - Google Patents
Single crystal casting and preparation method thereof Download PDFInfo
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- CN115709261A CN115709261A CN202211421222.1A CN202211421222A CN115709261A CN 115709261 A CN115709261 A CN 115709261A CN 202211421222 A CN202211421222 A CN 202211421222A CN 115709261 A CN115709261 A CN 115709261A
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Abstract
The invention discloses a single crystal casting and a preparation method thereof, for this reason, the single crystal casting preparation method provided by the embodiment of the invention on the one hand designs the seed crystal and the seed crystal cavity of the mould shell into the matched frustum shape, and designs the height of the seed crystal to be larger than that of the seed crystal cavity; the mold shell assembled with the seed crystal is arranged on a chilling chassis of the vacuum directional solidification furnace, the mold shell is supported by the seed crystal so that the mold shell is not contacted with the chilling chassis, the seed crystal is the same as the taper of a seed crystal cavity, the weight of the whole mold shell is completely pressed on the seed crystal, the seed crystal is tightly attached to the mold shell without a gap, and the poured metal liquid cannot flow into the mold shell to form a flash, so that flash and mixed crystals cannot be formed.
Description
Technical Field
The invention belongs to the technical field of single crystal preparation, and particularly relates to a single crystal casting and a preparation method thereof.
Background
The existing method for obtaining single crystal mainly comprises a crystal selection method and a seed crystal method, but the existing seed crystal method has the following problems: firstly, when the cylindrical seed crystal 1 is arranged in the cylindrical seed crystal cavity of the mould shell 2, a gap 4 is inevitably formed, as shown in figure 1 (a); molten metal 5 is poured during casting to form a flash 6 as shown in fig. 1 (c), and the flash grows into flash impurity crystals 7 in the solidification process as shown in fig. 1 (d). There is a method in which the seed crystal is directly connected under the blade wax pattern when the wax pattern is made, the seed crystal is not retained in the mold shell after dipping slurry and sand pouring, but the surface of the seed crystal is oxidized by long-time (about one day) baking at about 1000 ℃ after dewaxing, so that the method is not practical; secondly, after the seed crystal is arranged on the mould shell, the upper surface of the seed crystal 1 reacts with residual gas in the vacuum furnace in the preheating time (up to one hour) before casting to generate a layer of oxide film 8, as shown in figure 1 (b), the layer of oxide film can be remained in situ or changed in position when the molten metal 5 is poured, and the growth of the crystal can be hindered in the subsequent solidification process, and the growth of oxide film mixed crystal 9 can be caused, as shown in figure 1 (d).
Disclosure of Invention
The invention mainly aims to provide a single crystal casting and a preparation method thereof, aiming at effectively solving the problem of mixed crystals caused by flash existing between seed crystals and a mould shell.
To this end, an aspect of an embodiment of the present invention provides a method for preparing a single crystal casting, including: designing seed crystal and a seed crystal cavity of a mould shell into matched frustum shapes, and designing the height of the seed crystal to be larger than that of the seed crystal cavity; the mould shell assembled with the seed crystal is arranged on a seed crystal chassis of the vacuum directional solidification furnace, the mould shell is supported by the seed crystal, so that the mould shell is not contacted with the chilling chassis, the taper of the seed crystal is the same as that of the seed crystal cavity, the weight of the whole mould shell is completely pressed on the seed crystal, the seed crystal is tightly attached to the mould shell, no gap exists, and the pouring metal liquid can not flow into the mould shell to form a flash, so that flash mixed crystals can not be formed.
Specifically, when a vacuum directional solidification furnace is used for preparing a single crystal casting, a chilling chassis is used for lifting most of a mould shell into a hot chamber of the directional solidification furnace, a furnace chamber is preheated after being vacuumized, but a seed crystal cavity and seed crystals are still kept in a cold area; after the furnace chamber is preheated to a set temperature, the seed crystal chamber of the mould shell is lifted into the hot chamber, so that the seed crystal part enters the hot zone; and then, preserving heat and pouring, finally, slowly descending the chilling chassis to enable the mould shell to descend into the cooling chamber at a set speed, and carrying out epitaxial growth on the seed crystals upwards to obtain the single crystal casting.
Specifically, the preheating temperature of the mold shell is more than or equal to 1500 degrees, the preheating temperature rise time of the mold shell is more than or equal to 1 hour, and the heat preservation time of the seed crystal cavity and the seed crystal after being lifted into the hot chamber is 12-18 minutes.
Specifically, the vacuum directional solidification furnace is reformed, an original chilling chassis is split and designed into two sets of a mould shell chassis and a seed crystal chassis which can independently move up and down, when a casting is prepared, the whole mould shell is lifted into a hot chamber of the directional solidification furnace by using the mould shell chassis to preheat, the seed crystal is still kept in a cold area of the vacuum directional solidification furnace in the preheating process of the mould shell, then the seed crystal is lifted into the heated mould shell by using the seed crystal chassis and is tightly propped, the mould shell is slightly lifted and separated from the mould shell chassis, then heat preservation and pouring are carried out, finally, the seed crystal chassis and the mould shell chassis are slowly descended together, the mould shell is descended into the cold chamber, and the seed crystal is upwards epitaxially grown to obtain the single crystal casting
Specifically, a plurality of through holes distributed in a circumferential array are formed in the die shell base plate, one seed crystal base plate is correspondingly arranged in each through hole, a plurality of seed crystal cavities corresponding to the seed crystal base plates one to one are formed in the die shell, the seed crystals are arranged in each seed crystal cavity, and each seed crystal upwards performs epitaxial growth to obtain one single crystal casting.
Specifically, the distribution circumferential axes of the through holes are superposed with the axis of the formwork base plate.
Specifically, the preheating temperature of the mold shell is more than or equal to 1500 degrees, the preheating temperature rise time of the mold shell is more than or equal to 1 hour, and the heat preservation time of the seed crystal after being lifted into the hot chamber is 4-6 minutes.
Specifically, the shape of the seed crystal is a cone frustum shape or a regular rhombohedral frustum shape.
The embodiment of the invention also provides a single crystal casting prepared by the preparation method of the single crystal casting.
Specifically, the single crystal casting is a single crystal blade.
Compared with the prior art, at least one embodiment of the invention has the following advantages: the seed crystal is made into a frustum shape, the seed crystal is matched and installed into the seed crystal cavity from the bottom of the mould shell before pouring, the seed crystal can be tightly attached to the installation cavity due to the fact that the seed crystal has conicity, after the mould shell assembled with the seed crystal is installed on the chilling chassis, the seed crystal supports the mould shell, the mould shell is not in contact with the chilling chassis, the mould shell is completely located on the seed crystal, under the pressure of the mould shell, the seed crystal is in closer contact with the mould shell, and molten metal cannot flow down to form a flash after heating and pouring, so that mixed crystals cannot be formed.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic view of a prior art seed crystal;
FIG. 2 is a schematic diagram of one embodiment of the present invention;
FIG. 3 is a schematic diagram of another implementation of an embodiment of the invention;
FIG. 4 is a top view of the assembly of the bottom plate of the seed crystal and the bottom plate of the mold casing according to the embodiment of the present invention;
FIG. 5 is an assembled cross-sectional view of a mold shell base and a seed crystal base according to an embodiment of the invention;
wherein: 1. seed crystals; 2. a formwork; 3. a chilling chassis; 4. a gap; 5. a molten metal; 6. flashing; 7. performing flash mixed crystal; 8. an oxide film; 9. oxide film mixed crystal; 10. a seed crystal cavity; 11. a formwork base plate; 12. a seed crystal chassis.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 2, a method for preparing a single crystal casting, designing a seed crystal 1 and a seed crystal cavity 10 of a mould shell 2 into a matched frustum shape, and designing the height of the seed crystal 1 to be larger than that of the seed crystal cavity 10, installing the mould shell 2 provided with the seed crystal 1 on a chilling chassis 3 of a vacuum directional solidification furnace, and using the seed crystal 1 to prop up the mould shell 2 so that the mould shell 2 is not contacted with the chilling chassis 3, wherein the seed crystal 1 and the seed crystal cavity 10 have the same taper, the weight of the whole mould shell 2 is fully pressed on the seed crystal 1, the seed crystal 1 is tightly attached to the mould shell 2 without a gap, and a pouring metal liquid 5 cannot flow into the forming a flash 6, so flash mixed crystals 7 cannot be formed.
In the embodiment, the seed crystal 1 is made into a frustum shape, the seed crystal 1 is matched and arranged in the seed crystal cavity 10 from the bottom of the mould shell 2 before pouring, the seed crystal 1 and the seed crystal cavity 10 have conicity and can be tightly attached, after the mould shell 2 assembled with the seed crystal 1 is arranged on a chilling chassis, the seed crystal 1 supports the mould shell 2, the mould shell 2 is not contacted with the chilling chassis 3, the mould shell 2 is completely positioned on the seed crystal, under the pressure of the mould shell 2, the contact with the seed crystal 1 is tighter, and after heating and pouring, the molten metal 5 can not flow down to form a flash 6, so flash mixed crystals can not be formed.
The inventor researches and discovers that in order to solve the problem that the oxide film 8 is generated on the upper surface of the seed crystal 1 preheated by the mold shell 2, the following scheme can be adopted in the preparation process of the casting:
(1) Shell installation: before casting, the seed crystal 1 is arranged in a seed crystal cavity 10 of a mould shell 2 from the bottom, the seed crystal can be tightly attached due to the same taper, but a small section can leak out of the lower part of the seed crystal due to the slightly longer seed crystal, the mould shell 2 assembled with the seed crystal is arranged on a chilling chassis 3, and the weight of the mould shell 2 is pressed on the seed crystal and then is contacted with the chilling chassis 3. Under the pressure of the mold shell 2, the contact with the seed crystal 1 is tighter without a gap 4, the chilling base plate 3 and the mold shell 2 are lifted, the mold shell 2 is mostly lifted into the hot area of the directional solidification furnace, and only the seed crystal 1 is left to be remained at the cold area.
(2) Preheating: after evacuation, the furnace chamber hot zone is heated to the desired furnace temperature (above 1500 ℃) for a few hours, during which time most of the mould shell 2 is heated in the hot zone, but the lowest seed crystal is not oxidized because it remains in the cold zone.
(3) Shell lifting: the mold shell 2 is lifted, and the seed crystal 1 enters the hot zone which is preheated.
(4) And (3) heat preservation: after a short incubation time (about 15 minutes), the upper part of the seed crystal 1 rapidly rises to above 1500 deg. and the upper surface begins to melt. Since the high-temperature exposure time of the seed crystal 1 is greatly shortened (from more than 1 hour to less than 15 minutes), the oxidation phenomenon is greatly reduced, and the oxide film 8 is rarely generated.
(5) Pouring: the poured molten metal 5 is rapidly fused with the melting part at the upper part of the seed crystal 1, and the molten metal 5 cannot flow into the flash 6 because the conical seed crystal 1 is fully attached to the inner cavity of the conical mould shell 2 without a gap, so that the flash 6 mixed crystals cannot be formed.
(6) Drawing and solidifying: the mould shell 2 descends into the cold chamber, the seed crystal 1 grows epitaxially upwards, and the directional solidification of the single crystal without mixed crystal can be realized because no mixed crystal of the flash 6 appears and the obstruction of the oxide film 8 is basically avoided.
In this embodiment, during preheating, the seed crystal chamber 10 of the mold shell 2 is partially left in the cold zone, and after the hot zone of the furnace chamber is heated to a high temperature, the seed crystal chamber is raised to the hot zone, during which most of the mold shell 2 is heated in the hot zone, but the seed crystal at the lowest end is left in the cold zone and is not oxidized, and in the above method, because the exposure time of the seed crystal at the high temperature is greatly shortened, the oxidation phenomenon is greatly reduced, and the oxide film 8 is rarely generated.
The inventor further researches and discovers that the method needs a certain holding time (about 15 minutes) to ensure that the seed crystal cavity 10 of the mould shell 2 and the seed crystal 1 therein are sufficiently heated because the mould shell 2 has poor heat transfer, so that the oxidation phenomenon still exists. In order to further solve the problem that the mold shell 2 preheats the upper surface of the seed crystal to generate an oxidation film 8, the inventor provides another innovative solution, specifically, the original chilling base plate 3 is split and designed into two sets of mold shell base plates 11 and seed crystal base plates 12 which can independently move up and down by reforming the directional solidification furnace, wherein the mold shell base plates 11 are used for bearing the mold shell 2, and the seed crystal base plates 12 are used for bearing the seed crystal 1. Referring to fig. 3, the casting is prepared as follows:
(1) Shell lifting: the entire formwork 2 is first raised into the hot chamber of the directional solidification furnace by means of the formwork bottom plate 11.
(2) Preheating: after vacuumizing, the hot area of the furnace chamber is heated, the required furnace temperature (more than 1500 ℃) is reached for more than one hour, all the formworks 2 are heated in the hot area, but the seed crystals are kept in the cold area and cannot be oxidized.
(3) Seed crystal lifting: then, the seed crystal is lifted into the heated mould shell 2 by using the seed crystal base plate 12 and is tightly propped, so that the mould shell 2 is slightly lifted and separated from the mould shell base plate 11, the mould shell 2 is completely positioned on the seed crystal, and the seed crystal is tightly attached to the seed crystal.
(4) And (3) heat preservation: after incubation for about 5 minutes, the seed crystal was rapidly heated and melted from above. Because the high-temperature exposure time of the seed crystal is greatly shortened (only about 5 minutes are needed in total), the oxidation phenomenon is greatly reduced, and the oxidation film 8 is basically not generated.
(5) Pouring: the molten metal 5 poured is fused with the upper melting part of the seed crystal rapidly, because the seed crystal is closely attached to the conical surface of the inner cavity of the mould shell 2 without a gap, the molten metal 5 can not flow into the flash 6, thus the flash 6 mixed crystal can not be formed, and because the exposure time of the seed crystal is greatly shortened, the oxidation phenomenon is greatly reduced, and the seed crystal basically has no oxide film 8.
(6) Drawing and solidifying: the seed crystal base plate 12 and the mould shell base plate 11 are synchronously descended together, the mould shell 2 is descended into the cold chamber, the seed crystal 1 is epitaxially grown upwards to obtain a single crystal casting, and the single crystal directional solidification without mixed crystals can be realized because the appearance of the fash 6 mixed crystals and the obstruction of the oxide film 8 are not generated basically.
In the embodiment, the original chilling base plate 3 is designed into two sets of the mould shell base plate 11 and the seed crystal base plate 12 which can independently move up and down in a splitting manner, when preheating is carried out, the whole mould shell 2 is heated in a hot area by utilizing the mould shell base plate 11, but the seed crystal 1 is kept in a cold area and cannot be oxidized, then the seed crystal 1 is lifted into the heated seed crystal cavity 10 by the seed crystal base plate 12 to be tightly propped and insulated, because the seed crystal cavity 10 of the mould shell 2 is preheated in advance, the seed crystal 1 can be rapidly heated and melted from the upper part, the heating melting time of the upper part of the seed crystal 1 is greatly reduced (about 5 minutes), the heating exposure time of the seed crystal 1 is greatly shortened, the oxidation phenomenon is greatly reduced, and the oxidation film 8 is basically not generated.
Referring to fig. 4 and 5, in some embodiments, a plurality of through holes are circumferentially distributed in an array manner on the mold shell base plate 11, each through hole is correspondingly provided with a seed crystal base plate 12, the mold shell 2 is provided with a plurality of seed crystal cavities 10 corresponding to the seed crystal base plates 12 one by one, each seed crystal cavity 10 is internally provided with a seed crystal 1, and each seed crystal 1 is subjected to upward epitaxial growth to obtain a single crystal casting.
It will be appreciated that in practice, to ensure uniformity of heating, the circumferential axis of the plurality of apertures coincides with the axis of the formwork base 11. The shape of the seed crystal 1 can be designed into a cone frustum shape or a regular pyramid frustum shape, such as a regular trigonal pyramid or a regular quadrangular pyramid. Of course, other frustum shapes can be designed. After the mold shell 2 is completely supported by the seed crystal 1, the clearance between the mold shell and the seed crystal chassis 12 is usually controlled to be 1-2mm, because of the smaller clearance, the overlong seed crystal can be avoided, and the material is saved.
Any embodiment disclosed herein above is meant to disclose, unless otherwise indicated, all numerical ranges disclosed as being preferred, and any person skilled in the art would understand that: the preferred ranges are merely those values which are obvious or representative of the technical effects which can be achieved. Since the numerical values are too numerous to be exhaustive, some of the numerical values are disclosed in the present invention to illustrate the technical solutions of the present invention, and the above-mentioned numerical values should not be construed as limiting the scope of the present invention.
Meanwhile, if the invention as described above discloses or relates to parts or structural members fixedly connected to each other, the fixedly connected parts can be understood as follows, unless otherwise stated: a detachable fixed connection (for example using a bolt or screw connection) can also be understood as: non-detachable fixed connections (e.g. riveting, welding) can, of course, also be replaced by one-piece structures (e.g. manufactured in one piece using a casting process) (unless it is obvious that one-piece processes cannot be used).
In addition, terms used in any technical aspect of the present disclosure for indicating positional relationship or shape include, unless otherwise stated, states or shapes similar, analogous or approximate thereto. Any part provided by the invention can be assembled by a plurality of independent components, or can be manufactured by an integral forming process.
The above examples are merely illustrative for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Nor is it intended to be exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (10)
1. A method of preparing a single crystal casting, comprising: designing seed crystal cavities (10) of the seed crystal (1) and the mould shell (2) into matched frustum shapes, and designing the height of the seed crystal (1) to be greater than that of the seed crystal cavity (10); the method is characterized in that a mold shell (2) assembled with seed crystals (1) is arranged on a chilling chassis (3) of a vacuum directional solidification furnace, the seed crystals (1) are utilized to support the mold shell (2), so that the mold shell (2) is not contacted with the chilling chassis (3), and as the seed crystals (1) and a seed crystal cavity (10) have the same taper, the weight of the whole mold shell (2) is pressed on the seed crystals (1), the seed crystals are tightly attached to the mold shell (2), no gap (4) exists, and pouring metal liquid (5) cannot flow into the mold shell to form a flash (6), so that flash mixed crystals (7) cannot be formed.
2. A method of producing a single crystal casting according to claim 1, characterized in that: when a vacuum directional solidification furnace is used for preparing a single crystal casting, most of the mould shell (2) is lifted into a hot chamber of the directional solidification furnace by using a chilling chassis (3), the furnace chamber is preheated after being vacuumized, but the seed crystal cavity (10) and the seed crystal (1) are still kept in a cold zone; after the furnace chamber is preheated to a set temperature, the seed crystal cavity (10) of the mould shell (2) is lifted into the hot chamber, so that the seed crystal (1) enters the hot zone; and then, preserving heat and pouring, finally, slowly descending the chilling chassis (3) to ensure that the mould shell (2) descends into a cold chamber at a set speed, and carrying out epitaxial growth on the seed crystal (1) upwards to obtain a single crystal casting.
3. A method of producing a single crystal casting according to claim 2, characterized in that: the preheating temperature of the mould shell (2) is more than or equal to 1500 degrees, the preheating temperature rise time of the mould shell (2) is more than or equal to 1 hour, and the heat preservation time of the seed crystal cavity (10) and the seed crystal (1) after being lifted into the hot chamber is 12-18 minutes.
4. A method of producing a single crystal casting according to claim 1, characterized in that: the vacuum directional solidification furnace is improved, an original chilling base plate (3) is split and designed into two sets of a mold shell base plate (11) and a seed crystal base plate (12) which can independently move up and down, when a casting is prepared, the whole mold shell (2) is lifted into a hot chamber of the directional solidification furnace by using the mold shell base plate (11) to be preheated, a seed crystal (1) is still kept in a cold zone of the vacuum directional solidification furnace in the preheating process of the mold shell (2), then the seed crystal (1) is lifted into the heated mold shell (2) by using the seed crystal base plate (12) and is tightly propped, the mold shell (2) is slightly lifted and separated from the mold shell base plate (11), then heat preservation and pouring are carried out, finally the seed crystal base plate (12) and the mold shell base plate (11) are slowly lowered together, the mold shell (2) is lowered into the cold chamber, and the seed crystal (1) is upwardly epitaxially grown to obtain the single crystal casting.
5. A method of preparing a single crystal casting according to claim 4, characterized in that: the mould shell base plate is provided with a plurality of through holes distributed in a circumferential array, each through hole is internally provided with one seed crystal base plate (12) correspondingly, the mould shell (2) is provided with a plurality of seed crystal cavities (10) corresponding to the seed crystal base plates (12) one by one, each seed crystal cavity (10) is internally provided with the seed crystal (1), and each seed crystal (1) is subjected to upward epitaxial growth to obtain one single crystal casting.
6. A method of preparing a single crystal casting according to claim 5, characterized in that: the distribution circumferential axes of the through holes are coincident with the axis of the formwork bottom plate (11).
7. A method of preparing a single crystal casting according to claim 4, characterized in that: the preheating temperature of the mould shell (2) is more than or equal to 1500 degrees, the preheating temperature rise time of the mould shell (2) is more than or equal to 1 hour, and the heat preservation time is 4-6 minutes after the seed crystal is lifted into the hot chamber.
8. A method of producing a single crystal casting according to any one of claims 1 to 7, characterized in that: the shape of the seed crystal is in a cone frustum shape or a regular diamond cone frustum shape.
9. A single crystal casting characterized by: the method for producing a single crystal casting according to any one of claims 1 to 8.
10. A single crystal casting according to claim 9, wherein: the single crystal casting is a single crystal blade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211421222.1A CN115709261A (en) | 2022-11-14 | 2022-11-14 | Single crystal casting and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211421222.1A CN115709261A (en) | 2022-11-14 | 2022-11-14 | Single crystal casting and preparation method thereof |
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| CN115709261A true CN115709261A (en) | 2023-02-24 |
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| CN202211421222.1A Pending CN115709261A (en) | 2022-11-14 | 2022-11-14 | Single crystal casting and preparation method thereof |
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| CN (1) | CN115709261A (en) |
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