CN115707274A

CN115707274A - Display panel and preparation method thereof

Info

Publication number: CN115707274A
Application number: CN202110884906.4A
Authority: CN
Inventors: 余磊; 孙贤文; 付东
Original assignee: Guangdong Juhua Printing Display Technology Co Ltd
Current assignee: Guangdong Juhua Printing Display Technology Co Ltd
Priority date: 2021-08-03
Filing date: 2021-08-03
Publication date: 2023-02-17

Abstract

The application discloses display panel and preparation method thereof, display panel include first electrode, luminescent layer, second electrode and take out the layer, the luminescent layer the second electrode takes out the layer with light and sets up in proper order the layer on the first electrode, wherein, the layer is taken out to light is amorphous film. In this application, through taking amorphous film as the light extraction layer, improved display panel's light extraction efficiency and avoided display panel to receive the damage, improved display panel's performance.

Description

Display panel and preparation method thereof

Technical Field

The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.

Background

The organic light emitting diode has the advantages of active light emission, wide viewing angle, high response speed, light weight, adjustable color, flexibility and the like, and has wide application prospects in the fields of display, illumination and the like, so that the organic light emitting diode is widely concerned by people. The parameters for measuring the performance of the organic light emitting diode light emitting device mainly comprise: external quantum efficiency, current efficiency, drive voltage, device lifetime, and color purity, wherein the current efficiency is directly proportional to the external quantum efficiency.

At present, in order to improve the light emitting performance of the organic light emitting diode light emitting device, a commonly adopted method is to arrange an organic light extraction layer on one side of a light emitting layer close to a light emitting surface, but the light extraction layer is formed by adopting an organic substance, so that the light transmission rate is low, the preparation cost is low, and in addition, when the subsequent process is carried out on the organic light extraction layer, the organic light extraction layer is easily influenced by high-energy particles generated in the subsequent process technology, namely, a display panel is damaged.

Therefore, a display panel having a high light extraction rate is urgently needed.

Disclosure of Invention

The embodiment of the application provides a display panel and a preparation method thereof, so as to improve the light extraction rate of the display panel and prevent the display panel from being damaged.

An embodiment of the present application provides a display panel, including:

a first electrode;

a light emitting layer disposed on the first electrode;

a second electrode disposed on the light emitting layer; and

and the light extraction layer is arranged on one side of the second electrode, which is far away from the first electrode, and is an amorphous film.

Optionally, in some embodiments of the present application, the light extraction layer material is an inorganic oxide.

Optionally, in some embodiments of the present application, the light extraction layer material includes at least one of zinc oxide, indium tin oxide, molybdenum trioxide, or titanium dioxide.

Optionally, in some embodiments of the present application, the light extraction layer has a transmittance in the visible light band of greater than 80%.

Optionally, in some embodiments of the present application, the refractive index of the light extraction layer material is 1.95 to 3, and the absorption coefficient of the light extraction layer material is 0.001 to 0.6.

Optionally, in some embodiments of the present application, the light extraction layer has a thickness of 50 nm to 100 nm.

Optionally, in some embodiments of the present application, the material of the light extraction layer is zinc oxide or indium zinc oxide, and the second electrode is magnesium silver or ytterbium silver.

The application also provides a preparation method of the display panel, which comprises the following steps:

providing a substrate;

sequentially laminating a first electrode, a light-emitting layer and a second electrode on the substrate, wherein the substrate, the first electrode, the light-emitting layer and the second electrode are intermediate products; and

and controlling the surface temperature of the intermediate product to be less than 80 ℃, and sputtering the surface of the intermediate product to form a light extraction layer, wherein the light extraction layer is an amorphous film.

Optionally, in some embodiments of the present application, the surface temperature of the intermediate product is 0.1-80 degrees celsius.

Optionally, in some embodiments of the present application, the sputtering pressure is 0.05 pa to 10 pa.

Optionally, in some embodiments of the present application, the sputtering power is 3 kw to 10 kw.

Optionally, in some embodiments of the present application, the first light-emitting unit includes a first light-emitting layer and a first hole transport layer, and the light conversion layer, the first hole transport layer, and the first light-emitting layer are sequentially stacked and disposed on the first electrode layer.

The application discloses display panel and preparation method thereof, display panel include first electrode, luminescent layer, second electrode and take out the layer, the luminescent layer the second electrode takes out the layer with light and sets up in proper order the layer on the first electrode, wherein, the layer amorphous film is taken out to light. In this application, adopt through taking out the layer with amorphous film as light, improved display panel's light and taken out efficiency and avoid display panel to receive the damage, improved display panel's performance.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic view of a first structure of a display panel according to an embodiment of the present disclosure.

Fig. 2 is a schematic diagram of a second structure of a display panel according to an embodiment of the present disclosure.

Fig. 3 is a schematic flow chart of a manufacturing method of a display panel provided in an embodiment of the present application.

Fig. 4 is a schematic view of the wavelength and transmittance of the light extraction layer provided in example 1 of the present application.

Fig. 5 is a schematic diagram of an X-ray diffraction pattern of the light extraction layer provided in example 1 of the present application.

Fig. 6 is a data diagram illustrating the wavelength, the refractive index, the wavelength, and the absorption coefficient of the light extraction layer provided in embodiment 1 of the present application.

Fig. 7 is a graph of luminance decay ratio versus time of the light extraction layer tested when the blue light emitting portion was lit, provided in example 1 of the present application and the comparative example.

Fig. 8 is a graph of luminance decay ratio versus time of the light extraction layer tested when the green light emitting part was lit, provided in example 1 and comparative example of the present application.

Fig. 9 is a graph of luminance decay ratio versus time of the light extraction layer tested when the red light emitting part was lit, provided in example 1 and comparative example of the present application.

Fig. 10 is a graph of current density versus current efficiency of the light extraction layer tested when the blue light emitting part was lit, provided in example 1 of the present application and the comparative example.

Fig. 11 is a graph of current density versus current efficiency of a light extraction layer region tested when lighting a green light emitting section, provided in example 1 of the present application and a comparative example.

Fig. 12 is a graph of current density versus current efficiency of the light extraction layer tested when the red light emitting part was lit, provided in example 1 of the present application and the comparative example.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.

The embodiment of the application provides a display panel and a preparation method thereof. The following are detailed below.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure. The present application provides a display panel 10. The display panel 10 includes a first electrode 100, a light emitting layer 200, a second electrode 299, and a light extraction layer 300.

In an embodiment, the display panel 10 further includes a substrate 400. The substrate 400 may be a rigid substrate 400 or a flexible substrate 400. The rigid substrate 400 may be a glass substrate 400. The material of the flexible substrate 400 includes one or a combination of several of polyimide, polyethylene naphthalate, polyethylene terephthalate, polyarylate, polycarbonate, polyethersulfone and polyetherimide.

In one embodiment, the display panel 10 further includes a reflective layer 500. The reflective layer 500 is disposed on the substrate 400. The reflective layer 500 material includes at least one of silver and aluminum. The reflective layer 500 is used to block light from one side of the substrate 400, so as to prevent the light from affecting the display panel 10.

The first electrode 100 is disposed on the reflective layer 500 away from the substrate 400. The first electrode 100 is an anode or a cathode. In one embodiment, the first electrode 100 is an anode.

In one embodiment, the material of the first electrode 100 layer includes one or more of indium tin oxide, indium zinc oxide, zinc aluminum oxide, and indium gallium zinc oxide. In one embodiment, the material of the first electrode 100 is indium tin oxide.

In one embodiment, the display panel 10 further includes a hole injection layer 600. The hole injection layer 600 is disposed on a side of the first electrode 100 away from the substrate 400. The hole injection layer 600 includes a first hole injection part 610, a second hole injection part 620, and a third hole injection part 630 connected in sequence.

In one embodiment, the material of the hole injection layer 600 is selected from poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate, molybdenum trioxide, tungsten trioxide, nickel oxide, polyaniline, and polythiophene. In one embodiment, the material of the hole injection layer 600 is poly (3, 4-ethylenedioxythiophene): polystyrene sulfonate.

In one embodiment, the hole injection layer 600 has a thickness W of 8 nm to 50 nm. Specifically, the thickness W of the hole injection layer 600 may be 10 nm, 15nm, 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, 48 nm, 50 nm, or the like. In one embodiment, the thickness W of the hole injection layer 600 is 30 nm.

In the application, the thickness W of the hole injection layer 600 is set between 8 nanometers and 50 nanometers, so that the injection efficiency of the hole injection layer 600 is ensured, the display panel 10 can normally display, and the display performance of the display panel 10 is prevented from being affected.

In one embodiment, the display panel 10 further includes a hole transport layer 700. The hole transport layer 700 is disposed on a side of the hole injection layer 600 away from the substrate 400. The hole transport layer 700 includes a first hole transport part 710, a second hole transport part 720, and a third hole transport part 730. The first hole transporting portion 710 is positioned on the first hole injecting portion 610. The second hole transporting portion 720 is located on the second hole injecting portion 620. The third hole transporting portion 730 is located on the third hole injecting portion 630.

In one embodiment, the hole transport layer 700 material comprises one or a combination of poly (9, 9-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine), poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) -benzidine), polyvinylcarbazole, 4',4 ″ -tris (carbazol-9-yl) triphenylamine, and 4, 4-bis (9-Carbazol) Biphenyl (CBP). In one embodiment, the hole transport layer 700 material is 4, 4-bis (9-carbazole) biphenyl.

In one embodiment, the hole transport layer 700 has a thickness D in the range of 15nm to 40 nm. Specifically, the thickness D of the hole transport layer 700 may be 15nm, 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, or the like. In one embodiment, the thickness D of the hole transport layer 700 is 30 nm.

In the present application, the thickness D of the hole transport layer 700 is set between 15nm and 40 nm, so as to ensure the transport efficiency of the holes in the hole transport layer 700, and further ensure the normal display of the display panel 10.

The light-emitting layer 200 is disposed on a side of the hole transport layer 700 away from the substrate 400. The light emitting layer 200 includes a first light emitting portion 210, a second light emitting portion 220, and a third light emitting portion 230. The first light emitting part 210 is located on the first hole transporting part 710. The second light emitting portion 220 is located on the second hole transporting portion 720. The third light emitting part 230 is positioned on the third hole transporting part 730. The first light-emitting portion 210, the second light-emitting portion 220, and the third light-emitting portion 230 are each selected from a red light-emitting portion, a blue light-emitting portion, and a green light-emitting portion, and the light-emitting colors of the first light-emitting portion 210, the second light-emitting portion 220, and the third light-emitting portion 230 are different from each other. In one embodiment, the first light emitting portion 210 is a blue light emitting portion. The second light emitting portion 220 is a green light emitting portion. The third light emitting part 230 is a red light emitting part.

In one embodiment, the first light emitting part 210 material includes a first host material and a first guest material. The first host material may be 4, 4-bis (9-Carbazole) Biphenyl (CBP). The first guest material can include bis (4, 6-difluorophenylpyridine-N, C2 ') iridium picolinate (FIrpic) and iridium (III) bis (4 ',6' -difluorophenylpyridine) tetrakis (1-pyrazolyl) borate (FIr) ₆ ) At least one of (1).

In one embodiment, the doping ratio of the first guest material is 5% to 10%. Specifically, the doping ratio of the first guest material may be 6%, 6.8%, 8%, 9%, 9.5%, or the like. In one embodiment, the doping ratio of the first guest material is 8%.

In the present application, the first host material is doped with the first guest material, so that electrons and holes in the light emitting layer 200 can be distributed in a balanced manner, an exciton recombination region is wider, the utilization rate of excitons is increased, stable spectral emission can be realized, and the efficiency roll-off of the display panel 10 at high luminance is improved.

In one embodiment, the thickness T of the first light emitting portion 210 ₁ Is 15 nm-30 nm. Specifically, the thickness T of the first light emitting part 210 ₁ And may be 16 nm, 20 nm, 25 nm, 29 nm, etc. In one embodiment, the thickness T of the first light-emitting portion 210 ₁ Is 20 nm.

In one embodiment, the second light emitting portion 220 material includes a second host material and a second guest material. The second host material may be 4, 4-bis (9-Carbazole) Biphenyl (CBP). The second guest material may be tris (1-phenyl-isoquinoline) iridium (Ir (piq) ₃ )。

In one embodiment, the doping ratio of the second guest material is 4% to 8%. Specifically, the doping ratio of the second guest material may be 4.6%, 4.8%, 6%, 7%, 7.5%, or the like. In one embodiment, the doping ratio of the second guest material is 6%.

In the present application, the second host material is doped with the second guest material, so that electrons and holes in the light emitting layer 200 can be distributed in a balanced manner, the exciton recombination region is wider, the utilization rate of excitons is increased, stable spectral emission can be realized, and the efficiency roll-off of the display panel 10 under high luminance is improved.

In one embodiment, the thickness T of the second light emitting portion 220 ₂ Is 35 nm-45 nm. Specifically, the thickness T of the second light emitting part 220 ₂ And may be 36 nm, 39 nm, 40 nm, 44 nm, etc. In one embodiment, the thickness T of the second light emitting portion 220 ₂ Is 40 nm.

In one embodiment, the third light emitting part 230 materialIncluding a third host material and a third guest material. The third host material includes 4, 4-bis (9-Carbazole) Biphenyl (CBP). The third guest material comprises tris (1-phenyl-isoquinoline) iridium (Ir (piq) ₃ )。

In one embodiment, the doping ratio of the third guest material is 2% to 7%. Specifically, the doping ratio of the third guest material may be 2.6%, 3%, 3.8%, 5%, 6.8%, or the like. In one embodiment, the doping ratio of the third guest material is 5%.

In the present application, the third host material is doped with the third guest material, so that electrons and holes in the light emitting layer 200 can be distributed in a balanced manner, the exciton recombination region is wider, the utilization rate of excitons is increased, stable spectral emission can be realized, and the efficiency roll-off of the display panel 10 under high luminance is improved.

In one embodiment, the thickness T of the third light emitting part 230 ₃ Is 45 nm-60 nm. Specifically, the thickness T of the third light-emitting part 230 ₃ And may be 46 nm, 50 nm, 55 nm, 58 nm, etc. In one embodiment, the thickness T of the third light emitting part 230 ₃ Is 50 nm.

In one embodiment, the display panel 10 further includes an electron transport layer 800. The electron transport layer 800 is disposed on a side of the light emitting layer 200 away from the substrate 400.

In one embodiment, the material of the electron transport layer 800 is diphenyl [4- (triphenylsilyl) phenyl ] phosphine oxide: 8-hydroxyquinoline-lithium. Diphenyl [4- (triphenylsilyl) phenyl ] phosphine oxide: the weight ratio of 8-hydroxyquinoline-lithium is 5:5.

in one embodiment, the thickness h of the electron transport layer 800 is 20 nm to 60 nm. Specifically, the thickness h of the electron transport layer 800 may be 20 nm, 24 nm, 35 nm, 38 nm, 40 nm, 50 nm, 54 nm, 60 nm, or the like. In one embodiment, the thickness h of the electron transport layer 800 is 35 nm.

In the present application, the thickness h of the electron transport layer 800 is set to 20 nm to 60 nm, so as to ensure the electron transport performance of the electron transport layer 800, and further ensure the normal display of the display panel 10.

The second electrode 299 is disposed on a side of the electron transport layer 800 away from the substrate 400. The second electrode 299 is a cathode or an anode. In one embodiment, the second electrode 299 is a cathode. Specifically, the second electrode 299 is a semitransparent cathode, and the material of the second electrode 299 is at least one of ytterbium, magnesium and silver. If the second electrode 299 is prepared by mixing magnesium and silver, wherein the weight ratio of the magnesium to the silver is respectively 1:9.

in one embodiment, the thickness H of the second electrode 299 ₂ Is 10 nm-30 nm. Specifically, the thickness H of the second electrode 299 ₂ And may be 10 nm, 14 nm, 20 nm, 25 nm, 28 nm, 30 nm, etc. In one embodiment, the thickness H of the second electrode 299 ₂ Is 15nm.

The light extraction layer 300 is disposed on a side of the second electrode 299 away from the substrate 400. The light extraction layer 300 is an amorphous thin film.

In one embodiment, the thickness d of the light extraction layer 300 is 50 nm to 100 nm. Specifically, the thickness d of the light extraction layer 300 may be 50 nm, 60 nm, 70 nm, 90 nm, 95 nm, or the like. In one embodiment, the thickness d of the light extraction layer 300 is 70 nm.

In one embodiment, the light extraction layer 300 is an inorganic oxide.

In one embodiment, the light extraction layer 300 material includes at least one of zinc oxide, indium tin oxide, molybdenum trioxide, and titanium dioxide. In one embodiment, indium zinc oxide is taken as an example for explanation.

In the present application, the amorphous thin film is used as the light extraction layer 300, and the formed material is an inorganic oxide having a high refractive index, a high transmittance, and a low absorption coefficient, and when it is applied to the display panel 10, the light extraction rate of the display panel 10 can be improved. An amorphous film is used as the light extraction layer 300 and is made of an inorganic oxide, so that a double-layer composite film is formed between the light extraction layer 300 and the second electrode 299, namely, the two layers of films are connected in parallel, the sheet resistance is reduced, the voltage drop is reduced, and the method is suitable for manufacturing the large-size display panel 10. The amorphous film is used as the light extraction layer 300 and is made of an inorganic oxide, so that damage to the display panel 10 caused by a subsequent film layer process is reduced, and a protective layer does not need to be prepared on the light extraction layer 300, for example, a layer of lithium fluoride is prepared on the light extraction layer 300 and is used as the protective layer, so that the display panel 10 is prevented from being damaged, and the cost is reduced.

In one embodiment, the display panel 10 further includes an encapsulation layer 900. The encapsulation layer 900 is disposed on a side of the light extraction layer 300 away from the substrate 400. The encapsulation layer 900 includes a first inorganic layer, an organic layer, and a second inorganic layer, which are sequentially stacked. The first inorganic layer and the second inorganic layer material include at least one of silicon nitride and silicon oxide. The inorganic layer material includes at least one of polyimide, polyethylene naphthalate, polyethylene terephthalate, polyarylate, polycarbonate, polyethersulfone, and polyetherimide. The encapsulation layer 900 is disposed on the light extraction layer 300 to prevent water and oxygen from corroding the structure of the display panel 10, thereby ensuring the stability of the display panel 10.

Referring to fig. 2, fig. 2 is a schematic view of a second structure of a display panel according to an embodiment of the present disclosure. It should be noted that the second structure is different from the first structure in that:

the second electrode 299 may be formed of a multi-layer material stack, such as an ytterbium layer 2991 formed of ytterbium, a silver layer 2992 formed of silver, the ytterbium layer 2991 disposed on the electron transport layer 800, the silver layer 2992 disposed on the ytterbium layer 2991, the ytterbium layer 2991 and the silver layer 2992 forming the second electrode 299, wherein the ytterbium layer has a thickness of 1nm and the silver layer has a thickness of 15nm.

In the application, the ytterbium layer 2991 and the silver layer 2992 are adopted to form the second electrode 299, so that the ytterbium layer 2991 can be used as an electron injection layer, the injection efficiency of electrons is improved, and the display effect of the display panel 10 is improved; setting the thickness of the ytterbium layer to 1nm improves the electron injection efficiency and the light extraction efficiency, thereby improving the display effect of the display panel 10.

The present application provides a display panel 10, the display panel 10 includes a first electrode 100, a light-emitting layer 200 and a taking-out layer, the light-emitting layer 200 is disposed on the first electrode 100, the light-taking-out layer 300 is disposed on one side of the light-emitting layer 200 far away from the first electrode 100, wherein the light-taking-out layer 300 is an amorphous film, and the formed material is an inorganic oxide. The inorganic oxide has a high refractive index, a high transmittance, and a low absorption coefficient, and when applied to the display panel 10, the light extraction efficiency of the display panel 10 can be improved. The amorphous film is used as the light extraction layer 300, so that a double-layer composite film is formed between the light extraction layer 300 and the second electrode 299, namely, the two layers of films are connected in parallel, so that the surface resistance is reduced, the voltage drop is reduced, and the method is suitable for manufacturing the large-size display panel 10. The amorphous film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that damage of a subsequent film process to the display panel 10 is reduced, and a protective layer is not required to be prepared on the light extraction layer 300 for protecting the structure of the display panel 10, for example, a layer of lithium fluoride is prepared on the light extraction layer 300 as the protective layer, so that the thickness of the panel is reduced, the light and thin design is facilitated, the cost is reduced, and the performance of the display panel 10 is improved.

Referring to fig. 3, fig. 3 is a schematic flow chart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure. The present application further provides a method for manufacturing the display panel 10, which is described in detail below.

Please continue to refer to fig. 1.

B11, providing a substrate.

Specifically, the substrate 400 is sequentially subjected to photoresist stripping and water washing. And then drying for later use.

In an embodiment, after step B11, the method further includes:

a reflective layer 500 material is disposed on the substrate 400 to form the reflective layer 500.

And B12, sequentially laminating a first electrode, a light-emitting layer and a second electrode on the substrate, wherein the substrate, the first electrode, the light-emitting layer and the second electrode are intermediate products.

Specifically, the first electrode 100 is formed by evaporating the material of the first electrode 100 on the side of the reflective layer 500 away from the substrate 400.

After the step of forming the first electrode 100 on the substrate 400, the method further includes:

a hole injection layer 600 is formed by evaporating a hole injection layer 600 material on the side of the first electrode 100 away from the substrate 400.

In one embodiment, the evaporation rate is 0.5-5 angstroms per second. Specifically, the evaporation rate may be 0.8 angstroms per second, 1 angstrom per second, 3 angstrom per second, or 5 angstrom per second, or the like.

In one embodiment, the vacuum degree of the evaporation is 2 × 10 ^-2 handkerchief-2X 10 ^-5 And (6) handkerchief. Specifically, the degree of vacuum of the vapor deposition may be 2X 10 ^-2 Handkerchief, 2X 10 ^-3 Handkerchief, 2X 10 ^-4 Handkerchief or 2X 10 ^-5 Pascals, and the like.

In one embodiment, the hole injection layer 600 has a thickness W of 8 nm to 50 nm. Specifically, the thickness W of the hole injection layer 600 may be 10 nm, 15nm, 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, 48 nm, 50 nm, or the like.

In an embodiment, after the step of forming the hole injection layer 600 on the side of the first electrode 100 away from the substrate 400, the method further includes:

the hole transport layer 700 is formed by evaporating the material of the hole transport layer 700 on the side of the hole injection layer 600 away from the substrate 400.

The hole transport layer 700 includes a first hole transport part 710, a second hole transport part 720, and a third hole transport part 730. The first hole transporting portion 710 is located on the first hole injecting portion 610. The second hole transporting portion 720 is located on the second hole injecting portion 620. The third hole transporting portion 730 is located on the third hole injecting portion 630.

In one embodiment, the material of the hole transport layer 700 includes one or a combination of poly (9, 9-dioctylfluorene-co-N- (4-butylphenyl) diphenylamine), poly (N, N ' -bis (4-butylphenyl) -N, N ' -bis (phenyl) -benzidine), polyvinylcarbazole, 4',4 ″ -tris (carbazol-9-yl) triphenylamine, and 4, 4-bis (9-Carbazolyl) Biphenyl (CBP).

In one embodiment, the hole transport layer 700 has a thickness D in the range of 15nm to 40 nm. Specifically, the thickness D of the hole transport layer 700 may be 15nm, 20 nm, 24 nm, 34 nm, 38 nm, 40 nm, or the like.

The first light emitting part 210 is formed by co-evaporating a material of the first light emitting part 210 on a side of the first hole transporting part 710 away from the substrate 400. The first light emitting portion 210 is a blue light emitting portion.

In one embodiment, the first light emitting portion 210 material includes a first host material and a first guest material. The first host material may be 4, 4-bis (9-Carbazole) Biphenyl (CBP). The first guest material may be bis (4, 6-difluorophenylpyridine-N, C2') picolinyliridium (FIrpic).

In one embodiment, the doping ratio of the first guest material is 5% to 10%. Specifically, the doping ratio of the first guest material may be 6%, 6.8%, 8%, 9%, 9.5%, or the like.

In one embodiment, the evaporation rate of the first host material is 0.5-2 angstroms per second. Specifically, the evaporation rate may be 0.5 angstroms per second, 0.7 angstroms per second, 1 angstroms per second, 1.5 angstroms per second, 2 angstroms per second, or the like.

In one embodiment, the evaporation rate of the first guest material is 0.01 angstroms per second to 0.1 angstroms per second. Specifically, the evaporation rate may be 0.01 angstroms per second, 0.03 angstroms per second, 0.06 angstroms per second, 0.08 angstroms per second, or 0.1 angstroms per second, or the like.

In one embodiment, the thickness T of the first light emitting portion 210 ₁ Is 15 nm-30 nm. Specifically, the thickness T of the first light emitting portion 210 ₁ May be 16 nm20 nm, 25 nm, 29 nm, etc.

Then, a second light emitting section 220 material is co-evaporated on the side of the second hole transporting section 720 remote from the substrate 400, forming a second light emitting section 220. The second light emitting portion 220 is a green light emitting portion.

In one embodiment, the second light emitting part 220 material includes a second host material and a second guest material. The second host material may be 4, 4-bis (9-Carbazole) Biphenyl (CBP). The second guest material may be tris (2-phenylpyridine) iridium (Ir (ppy) ₃ )。

In one embodiment, the doping ratio of the second guest material is 4% to 8%. Specifically, the doping ratio of the second guest material may be 4.6%, 4.8%, 6%, 7%, 7.5%, or the like.

In one embodiment, the evaporation rate of the second host material is 0.5-2 angstroms per second. Specifically, the evaporation rate may be 0.5 angstroms per second, 0.7 angstroms per second, 1 angstroms per second, 1.5 angstroms per second, 2 angstroms per second, or the like.

In one embodiment, the second guest material has an evaporation rate of 0.01 angstroms per second to 0.1 angstroms per second. Specifically, the evaporation rate may be 0.01 angstroms per second, 0.03 angstroms per second, 0.06 angstroms per second, 0.08 angstroms per second, or 0.1 angstroms per second, or the like.

In one embodiment, the thickness T of the second light emitting portion 220 ₂ Is 35 nm-45 nm. Specifically, the thickness T of the second light emitting part 220 ₂ And may be 36 nm, 39 nm, 40 nm, 44 nm, etc.

Then, the third light-emitting section 230 is formed by co-evaporating the material of the third light-emitting section 230 on the side of the third hole-transporting section 730 remote from the substrate 400. The third light emitting part 230 is a red light emitting part.

In one embodiment, the third light emitting part 230 material includes a third host material and a third guest material. The third host material may be 4, 4-bis (9-Carbazole) Biphenyl (CBP). The third guest material may be tris (1-phenyl-isoquinoline) iridium (Ir (piq) ₃ )。

In one embodiment, the doping ratio of the third guest material is 2% to 7%. Specifically, the doping ratio of the third guest material may be 2.6%, 3%, 3.8%, 5%, 6.8%, or the like.

In one embodiment, the evaporation rate of the third host material is 0.5-2 angstroms per second. Specifically, the evaporation rate may be 0.5 angstroms per second, 0.7 angstroms per second, 1 angstroms per second, 1.5 angstroms per second, or 2 angstroms per second, or the like.

In one embodiment, the evaporation rate of the third guest material is in a range of 0.01 angstroms per second to 0.1 angstroms per second. Specifically, the evaporation rate may be 0.01 angstroms per second, 0.03 angstroms per second, 0.05 angstroms per second, 0.08 angstroms per second, or 0.1 angstroms per second, or the like.

In one embodiment, the vacuum degree of the evaporation is 2 × 10 ^-2 handkerchief-2X 10 ^-5 And (4) handkerchief. Specifically, the degree of vacuum of the vapor deposition may be 2X 10 ^-2 Handkerchief, 2X 10 ^-3 Handkerchief, 2X 10 ^-4 Handkerchief or 2X 10 ^-5 Pascals, and the like.

In one embodiment, the thickness T of the third light emitting part 230 ₃ Is 45 nm-60 nm. Specifically, the thickness T of the third light-emitting part 230 ₃ And may be 46 nm, 50 nm, 55 nm, 58 nm, etc.

The first light emitting portion 210, the second light emitting portion 220, and the third light emitting portion 230 are disposed at the same layer, and the first light emitting portion 210, the second light emitting portion 220, and the third light emitting portion 230 constitute the light emitting layer 200.

In an embodiment, after the step of forming the light-emitting layer 200 on the side of the hole transport layer 700 away from the substrate 400, the method further includes:

the electron transport layer 800 is formed by co-evaporating the electron transport layer 800 material on the side of the light emitting layer 200 away from the substrate 400.

In one embodiment, the material of the electron transport layer 800 includes a fourth host material and a fourth guest material. The fourth host material is diphenyl [4- (triphenylsilyl) phenyl ] phosphine oxide (TSPO 1), and the fourth guest material is 8-hydroxyquinoline-lithium (Liq). A fourth host material: the weight ratio of the fourth guest material is 5:5.

in one embodiment, the evaporation rate of the fourth host material is 0.1-1 angstrom per second. Specifically, the evaporation rate may be 0.1, 0.3, 0.5, 0.8, or 1 angstrom per second, or the like.

In one embodiment, the evaporation rate of the fourth guest material is 0.1 angstroms per second to 1 angstroms per second. Specifically, the evaporation rate may be 0.1 angstroms per second, 0.3 angstroms per second, 0.5 angstroms per second, 0.9 angstroms per second, 1 angstroms per second, or the like.

In one embodiment, the degree of vacuum for evaporation is 2 × 10 ^-2 handkerchief-2X 10 ^-5 And (6) handkerchief. Specifically, the degree of vacuum of the vapor deposition may be 2X 10 ^-2 Handkerchief, 2X 10 ^-3 Handkerchief, 2X 10 ^-4 Handkerchief or 2X 10 ^-5 Handkerchief, and the like.

In one embodiment, the thickness h of the electron transport layer 800 is 20 nm to 60 nm. Specifically, the thickness h of the electron transport layer 800 may be 20 nm, 24 nm, 35 nm, 38 nm, 40 nm, 50 nm, 54 nm, 60 nm, or the like.

After the step of forming the electron transport layer 800 on the side of the light emitting layer 200 away from the substrate 400, the method further comprises:

a second electrode 299 material is co-evaporated on the side of the electron transport layer 800 away from the substrate 400 to form the second electrode 299. The second electrode 299 is a cathode.

In one embodiment, the second electrode 299 material is magnesium and silver. The weight ratio of magnesium to silver is 1:9. the substrate 400, the reflective layer 500, the first electrode 100, the hole injection layer 600, the hole transport layer 700, the light emitting layer 200, the electron transport layer 800, and the second electrode 299 are intermediate products.

In one embodiment, the evaporation rates of magnesium and silver are both 0.1 angstroms per second to 1 angstroms per second. Specifically, the evaporation rate may be 0.1 angstroms per second, 0.3 angstroms per second, 0.5 angstroms per second, 0.8 angstroms per second, 1 angstroms per second, or the like.

In one embodiment, the vacuum degree of the evaporation is 2 × 10 ^-2 handkerchief-2X 10 ^-5 And (6) handkerchief. Specifically, the degree of vacuum of the vapor deposition may be 2X 10 ^-2 Handkerchief, 2X 10 ^-3 Handkerchief, 2X 10 ^-4 Handkerchief or 2X 10 ^-5 Handkerchief, and the like.

And B13, controlling the surface temperature of the intermediate product to be lower than 80 ℃, and sputtering the surface of the intermediate product to form a light extraction layer, wherein the light extraction layer is made of an amorphous film.

Specifically, the surface temperature of the intermediate product is controlled to be less than 80 degrees centigrade, that is, the surface temperature of the second electrode 299 is controlled to be less than 80 degrees centigrade; then, the light extraction layer 300 is formed by sputtering the material of the light extraction layer 300 on the side of the second electrode 299 away from the substrate 400.

In one embodiment, the surface temperature of the intermediate product is between 0.1 degrees Celsius and 80 degrees Celsius. Specifically, the temperature of sputtering may be 0.1 degrees celsius, 10 degrees celsius, 30 degrees celsius, 50 degrees celsius, 70 degrees celsius, or 80 degrees celsius, or the like.

In this application, the surface temperature of the control intermediate product is set to 0.1-80 degrees centigrade, which can prevent the structure in the display panel 10 from being damaged. If the surface temperature of the intermediate product is set to be greater than 80 degrees celsius, the quality of the lower film, particularly the crystallization of the electron transport layer 800 film, may be affected, thereby affecting the lifespan of the display panel 10.

In one embodiment, the pressure of sputtering is 0.05 Pa to 10 Pa. The sputtering pressure may be 0.05 Pa, 2 Pa, 5 Pa, 8 Pa, 10 Pa, etc.

In the present application, the film formation speed and the film formation quality of the light extraction layer 300 can be ensured by setting the sputtering pressure to 0.05 pa to 10 pa. If the sputtering pressure is set to be higher than 10 pa, that is, the pressure is too high, the number of gas ions bombarding the target is large, the number of sputtered ions is also large, the sputtering rate is increased, the probability of collision with the gas ions is increased, and the deposition rate is decreased. If the sputtering pressure is set to be less than 0.05 Pa, namely the pressure is too low, the energy of the sputtered atoms is larger, the scattering of the sputtered atoms in the process of flying to the substrate is increased along with the increase of the sputtering pressure, the energy is reduced when the sputtered atoms reach the substrate, the damage to the lower film can be reduced, and the reduction of the migration capacity can also influence the film forming quality.

In one embodiment, the power of sputtering is 3 kilowatts to 10 kilowatts. Specifically, the sputtering power is 3 kw, 5 kw, 8 kw or 10 kw.

In one embodiment, the light extraction layer 300 has a thickness d of 50 nm to 100 nm. Specifically, the thickness d of the light extraction layer 300 may be 50 nm, 60 nm, 70 nm, 90 nm, 95 nm, or the like.

In one embodiment, the light extraction layer 300 is an inorganic oxide.

In one embodiment, the light extraction layer 300 material includes at least one of zinc oxide, indium tin oxide, molybdenum trioxide, and titanium dioxide.

In the present application, an amorphous film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that the light extraction layer 300 can be formed by low vacuum and low temperature sputtering, the light extraction rate of the display panel 10 is improved, and the damage of high-energy particles to the display panel 10 in the subsequent encapsulation process of the encapsulation layer 900 is reduced; the light extraction layer 300 is an amorphous thin film, also called an amorphous thin film, and has a transmittance of 80% or more in a visible light band, that is, a high transmittance, which improves the light transmittance of the display panel 10, and the light extraction layer 300 has a refractive index of 1.95 to 3 and an absorption coefficient of 0.001 to 0.6, that is, a high refractive index and a low absorption coefficient, which further improves the light transmittance of the display panel 10, thereby improving the performance of the display panel 10; an amorphous film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that a double-layer composite film is formed between the light extraction layer 300 and the second electrode 299, that is, the two layers are equivalent, and the films are connected in parallel, so that the sheet resistance is reduced, the voltage drop is reduced, and the method is suitable for manufacturing the large-size display panel 10.

In an embodiment, after the step of forming the light extraction layer 300 on the side of the second electrode 299 away from the substrate 400, the method further includes:

an encapsulation layer 900 is formed on the side of the light extraction layer 300 away from the substrate 400. The encapsulation layer 900 includes a first inorganic layer, an organic layer, and a second inorganic layer sequentially stacked. The first inorganic layer and the second inorganic layer material include at least one of silicon nitride and silicon oxide. The organic layer material includes at least one of polyimide, polyethylene naphthalate, polyethylene terephthalate, polyarylate, polycarbonate, polyethersulfone, and polyetherimide. The encapsulation layer 900 is disposed on the light extraction layer 300 to prevent water and oxygen from corroding the structure of the display panel 10, thereby ensuring the stability of the display panel 10.

Example 1

Please continue to refer to fig. 1.

Specifically, a substrate 400 is provided, and the photoresist is removed and the substrate 400 is washed sequentially; then, drying for later use; then, a silver forming reflective layer 500 is provided on the substrate 400; then, indium tin oxide is evaporated on the side of the reflective layer 500 away from the substrate 400 to form an anode.

Then, moO is evaporated on the side of the first electrode 100 far away from the substrate 400 ₃ A hole injection layer 600 is formed, in which MoO is present ₃ Has a vapor deposition rate of 1 angstrom per second, poly (3, 4-ethylenedioxythiophene): the degree of vacuum for vapor deposition of polystyrene sulfonate was 2X 10 ^-4 The hole injection layer 600 has a thickness W of 30 nm, and the hole injection layer 600 includes a first hole injection part 610, a second hole injection part 620, and a third hole injection part 630 connected in sequence.

Then, a hole transport layer 700 material is evaporated on the side of the hole injection layer 600 away from the substrate 400, and a hole transport layer 700 is formed, wherein the hole transport layer 700 material is 4, 4-bis (9-carbazole) biphenyl, the thickness D of the hole transport layer 700 is 30 nanometers, and the hole transport layer 700 includes a first hole transport portion 710, a second hole transport portion 720, and a third hole transport portion 730. The first hole transporting portion 710 is positioned on the first hole injecting portion 610. The second hole transporting portion 720 is located on the second hole injecting portion 620. The third hole transporting portion 730 is located on the third hole injecting portion 630.

Then, CBP and FIrpic are co-evaporated on the side of the first hole transporting region 710 away from the substrate 400 to form a blue light emitting region having a thickness T ₁ 20 nm, wherein the doping ratio of FIrpic is 8%, the evaporation rate of CBP is 1 angstrom per second, the evaporation rate of FIrpic is 0.08 angstrom per second, and the vacuum degree of CBP and FIrpic is 22 × 10 ^-4 And (6) handkerchief.

Then, CBP and Ir (ppy) are co-evaporated on the side of the second hole transporting portion 720 remote from the substrate 400 ₃ Forming a green light emitting part with a thickness T ₂ Is 40 nm, wherein, ir (ppy) ₃ Has a doping ratio of 6%, the evaporation rate of CBP is 1 angstrom/second, ir (ppy) ₃ The evaporation rate was 0.06 angstroms per second, CBP and Ir (ppy) ₃ Degree of vacuum of 2X 10 ^-4 And (6) handkerchief.

Then, CBP and Ir (ppy) are co-evaporated on the side of the third hole transporting portion 730 away from the substrate 400 ₃ Forming a red light emitting part with a thickness T ₃ Is 50 nm, wherein, ir (ppy) ₃ Has a doping ratio of 5%, a vapor deposition rate of CBP of 1 Angstrom per second, ir (ppy) ₃ Evaporation rate of 0.05 angstroms per second, CBP and Ir (ppy) ₃ Vacuum degree of (2X 10) ^-4 The blue light emitting portion, the green light emitting portion, and the red light emitting portion constitute the light emitting layer 200.

Then, the electron transport layer 800 is formed by co-evaporating TSPO1 and Liq on the side of the light emitting layer 200 away from the substrate 400, wherein the weight ratio of TSPO1 to Liq is 5:5, the thickness h of the electron transport layer 800 was 35 nm, the evaporation rate of TSPO1 was 0.5 Angstrom per second, the evaporation rate of Liq was 0.5 Angstrom per second, and the degree of vacuum of TSPO1 and Liq was 2X 10 ^-4 And (6) handkerchief.

Then, an alloy of magnesium and silver is vapor-deposited on the side of the electron transport layer 800 remote from the substrate 400 to form a cathodeAnd the weight ratio of magnesium to silver is 1:9, the evaporation rates of magnesium and silver are both 0.5 angstroms per second, and the vacuum degrees of magnesium and silver are 2X 10 ^-4 The substrate 400, the reflective layer 500, the anode, the hole injection layer 600, the hole transport layer 700, the light emitting layer 200, the electron transport layer 800, and the cathode are intermediate products.

Then, the surface temperature of the intermediate product is controlled to be less than 80 degrees celsius, that is, the surface temperature of the second electrode 299 is controlled to be less than 80 degrees celsius, at this time, indium zinc oxide is sputtered on the side of the cathode away from the substrate 400 to form the light extraction layer 300, wherein the light extraction layer 300 is an amorphous film, the thickness d of the light extraction layer 300 is 70 nanometers, the sputtering pressure is 1 pa, and the sputtering power is 5 kw. Then, the blue light emitting portion, the green light emitting portion, and the red light emitting portion are lit up, and the current density and current efficiency data and the luminance decay ratio and time data of the three corresponding light extraction layers 300 are tested, respectively.

Then, an encapsulation layer 900 is formed on the side of the light extraction layer 300 away from the substrate 400, thereby forming the display panel 10. The encapsulation layer 900 includes a first inorganic layer, an organic layer, and a second inorganic layer sequentially stacked. The first inorganic layer and the second inorganic layer are made of silicon nitride, and the organic layer is made of polyimide.

The resulting display panel 10 was tested for efficiency and lifetime.

Example 2

Please continue with fig. 2. Example 2 differs from example 1 in that: the second electrode 299 is not prepared by mixing silver and magnesium, ytterbium is evaporated on the electron transport layer 800 step by step to form an ytterbium layer 2991, silver is arranged on the ytterbium layer 2991 to form a silver layer 2992, and the ytterbium layer 2991 and the silver layer 2992 form the second electrode 299, wherein the thickness of the ytterbium layer is 1nm, and the thickness of the silver layer is 15nm. Other steps are the same as embodiment 1 and are not described herein.

Example 3

Please continue to refer to fig. 1. Example 3 differs from example 1 in that: the light extraction layer 300 prepared from indium zinc oxide was changed to the light extraction layer 300 prepared from zinc oxide, and the other steps were the same as in example 1 and will not be described again.

Example 4

Please continue with fig. 2. Example 4 differs from example 1 in that: the light extraction layer 300 made of indium zinc oxide was changed to the light extraction layer 300 made of zinc oxide; the second electrode 299 is not prepared by mixing silver and magnesium, ytterbium is evaporated on the electron transport layer 800 step by step to form an ytterbium layer 2991, silver is arranged on the ytterbium layer 2991 to form a silver layer 2992, and the ytterbium layer 2991 and the silver layer 2992 form the second electrode 299, wherein the thickness of the ytterbium layer is 1nm, and the thickness of the silver layer is 15nm. Other steps are the same as embodiment 1 and are not described herein.

Comparative example

It should be noted that the comparative example is different from example 1 in that: the light extraction layer 300 made of indium zinc oxide was changed to an organic light extraction layer made of an organic compound, and other steps were the same as in example 1 and will not be described again.

Referring to fig. 4 and 5, fig. 4 is a schematic view illustrating a wavelength and a transmittance of a light extraction layer provided in embodiment 1 of the present application. Fig. 5 is a schematic diagram of an X-ray diffraction pattern of the light extraction layer provided in example 1 of the present application. As can be seen from the figure, the light extraction layer does not have a peak in the X-ray diffraction pattern, that is, the light extraction layer 300 is an amorphous film, also referred to as an amorphous film, and the transmittance of the light extraction layer 300 in the visible light band reaches 80% or more.

In the present application, the amorphous film is used as the light extraction layer 300, which is also referred to as an amorphous film, so that the transmittance of the light extraction layer 300 in the visible light band can be 80% or more, thereby improving the light extraction rate of the display panel 10 and improving the display performance of the display panel 10.

Referring to fig. 6, fig. 6 is a data diagram illustrating a wavelength, a refractive index, a wavelength, and an absorption coefficient of a light extraction layer provided in embodiment 1 of the present application. The refractive index of the light extraction layer material is 1.95-3. The absorption coefficient of the light extraction layer is 0.001-0.6.

In the present application, the amorphous thin film is used as the light extraction layer 300, and the formed material is an inorganic oxide having a high refractive index and a low absorption coefficient, which improves the light extraction efficiency of the display panel 10.

Referring to fig. 7 to 9, fig. 7 is a graph of luminance decay ratio versus time of a light extraction layer tested when lighting a blue light emitting portion, as provided in example 1 and comparative example of the present application. Fig. 8 is a graph of luminance decay ratio versus time of the light extraction layer tested when the green light emitting part was lit, provided in example 1 and comparative example of the present application. Fig. 9 is a graph of luminance decay ratio versus time of the light extraction layer tested when the red light emitting part was lit, provided in example 1 and comparative example of the present application.

As described above, in the present invention, the light extraction layer 300 formed of an inorganic oxide is used, the light extraction layer 300 formed of an inorganic oxide is an amorphous thin film, and the time required for the luminance of the display panel 10 to be reduced to 95% is longer than the time required for the light extraction layer 300 formed of an organic material in the related art, that is, the light extraction layer 300 is formed of an inorganic oxide, that is, the light extraction layer 300 is an amorphous thin film, and thus the lifetime of the display panel 10 is improved.

Referring to fig. 10 to 12, fig. 10 is a graph showing current density and current efficiency of a light extraction layer tested when a blue light emitting portion is lit, according to example 1 and a comparative example of the present application. Fig. 11 is a graph showing current density and current efficiency in the light extraction layer region tested when the green light emitting sections were lit, according to example 1 and comparative example of the present application. Fig. 12 is a graph of current density versus current efficiency of the light extraction layer tested when the red light emitting part was lit, provided in example 1 of the present application and the comparative example.

It is understood that, when the light extraction layer 300 is an amorphous thin film and the material is an inorganic oxide, the current efficiency of the display panel 10 is higher than that of the display panel 10 provided with the organic light extraction layer 300 in the related art, and the current efficiency is proportional to the external quantum efficiency, that is, the external quantum efficiency of the display panel 10 can be improved by forming the light extraction layer 300 using an inorganic oxide.

Referring to table 1, table 1 is a table of efficiency and lifetime data of lighting up the blue light emitting part, the green light emitting part, and the red light emitting part in the display panel according to example 1 and comparative example of the present application, respectively.

Table 1:

as can be seen from table 1, the display panel 10 has improved R/G/B efficiency by 8%,5% and 5% respectively, when the light extraction layer 300 is formed of an amorphous thin film and the material is an inorganic oxide. The lifetime of the display panel 10 is improved by 12%,7% and 33% by using the amorphous film as the light extraction layer 300 and using the inorganic oxide as the material. Meanwhile, the sheet resistance of the second electrode 299 is decreased by 25%, thereby reducing the voltage drop of the display panel 10.

The application discloses a display panel 10 and a preparation method thereof, the display panel 10 comprises a first electrode 100, a light emitting layer 200 and a taking-out layer, the light emitting layer 200 is arranged on the first electrode 100, the light taking-out layer 300 is arranged on one side, far away from the first electrode 100, of the light emitting layer 200, and the light taking-out layer 300 is an amorphous film. In the present application, an amorphous thin film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that the light extraction layer 300 can be formed by low vacuum and low temperature sputtering, which improves the light extraction efficiency of the display panel 10; the light extraction layer 300 is an amorphous thin film, also called an amorphous thin film, and has a transmittance of 80% or more in a visible light band, that is, a high transmittance, which improves the light transmittance of the display panel 10, and the light extraction layer 300 has a refractive index of 1.95 to 3 and an absorption coefficient of 0.001 to 0.6, that is, a high refractive index and a low absorption coefficient, which further improves the light transmittance of the display panel 10, thereby improving the performance of the display panel 10; an amorphous film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that a double-layer composite film is formed between the light extraction layer 300 and the second electrode 299, which is equivalent to the parallel connection of two films, thereby reducing the sheet resistance, reducing the voltage drop, and being suitable for manufacturing the large-size display panel 10; the amorphous film is used as the light extraction layer 300, and the formed material is an inorganic oxide, so that a protective layer is not required to be prepared on the light extraction layer 300 to protect the structure in the display panel 10, for example, a layer of lithium fluoride is not required to be prepared on the light extraction layer 300 to prevent the structure in the display panel 10 from being damaged by high-energy particles generated by a chemical vapor deposition process in the packaging layer 900 process, and the cost is reduced.

The display panel and the manufacturing method thereof provided by the embodiments of the present application are described in detail above, and the principle and the embodiment of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A display panel, comprising:

a first electrode;

a light emitting layer disposed on the first electrode;

a second electrode disposed on the light emitting layer; and

2. The display panel according to claim 1, wherein the light extraction layer material is an inorganic oxide.

3. The display panel according to claim 1, wherein the light extraction layer material comprises at least one of zinc oxide, indium tin oxide, molybdenum trioxide, or titanium dioxide.

4. The display panel according to claim 1, wherein the light extraction layer has a transmittance in a visible light band of more than 80%.

5. A display panel as claimed in claim 1 characterized in that the refractive index of the light extraction layer material is 1.95-3 and the absorption coefficient of the light extraction layer material is 0.001-0.6.

6. The display panel according to claim 1, wherein the light extraction layer has a thickness of 50 nm to 100 nm.

7. The display panel according to claim 1, wherein the material of the light extraction layer is zinc oxide or indium zinc oxide, and wherein the second electrode is magnesium silver or ytterbium silver.

8. A method for manufacturing a display panel, comprising:

providing a substrate;

sequentially stacking a first electrode, a light-emitting layer and a second electrode on the substrate, wherein the substrate, the first electrode, the light-emitting layer and the second electrode are intermediate products; and

9. The display panel according to claim 8, wherein the surface temperature of the intermediate product is 0.1-80 degrees celsius.

10. The display panel according to claim 8, wherein the sputtering pressure is 0.05 pa to 10 pa.

11. The display panel according to claim 8, wherein the sputtering power is 3 kw to 10 kw.