CN115702549A - 一种振荡器电路 - Google Patents
一种振荡器电路 Download PDFInfo
- Publication number
- CN115702549A CN115702549A CN202080102025.6A CN202080102025A CN115702549A CN 115702549 A CN115702549 A CN 115702549A CN 202080102025 A CN202080102025 A CN 202080102025A CN 115702549 A CN115702549 A CN 115702549A
- Authority
- CN
- China
- Prior art keywords
- switch
- transconductance amplifier
- coupled
- inductive element
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001939 inductive effect Effects 0.000 claims abstract description 168
- 239000011159 matrix material Substances 0.000 claims abstract description 63
- 230000008878 coupling Effects 0.000 claims abstract description 59
- 238000010168 coupling process Methods 0.000 claims abstract description 59
- 238000005859 coupling reaction Methods 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 230000015654 memory Effects 0.000 claims description 15
- 238000004804 winding Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 39
- 238000013461 design Methods 0.000 description 27
- 238000004891 communication Methods 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000729 poly(L-lysine) polymer Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
- H03B5/1268—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched inductors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/0802—Details of the phase-locked loop the loop being adapted for reducing power consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
一种振荡器电路(800)，涉及芯片技术领域，能够减少PLL中的振荡器个数，降低射频芯片面积，从而降低芯片成本。振荡器电路(800)包括第一振荡器、第二振荡器和开关矩阵，其中：第一振荡器包括第一跨导放大器(V1)、第二跨导放大器(V2)和第一谐振器；第二振荡器包括第三跨导放大器(V3)、第四跨导放大器(V4)和第二谐振器；第一谐振器包括第一电容元件(C1)和第一电感元件(801)，第二谐振器包括第二电容元件(C2)和第二电感元件(802)，第一电感元件(801)和第二电感元件(802)耦合；开关矩阵包括第一开关(SW1)、第二开关(SW2)、第三开关(SW3)和第四开关(SW4)。开关矩阵耦合在第一跨导放大器(V1)、第二跨导放大器(V2)、第三跨导放大器(V3)和第四跨导放大器之间(V4)。开关矩阵用于改变第一电感元件(801)和第二电感元件(802)的耦合系数。
Description
PCT国内申请，说明书已公开。
Claims (14)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/097263 WO2021253453A1 (zh) | 2020-06-19 | 2020-06-19 | 一种振荡器电路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115702549A true CN115702549A (zh) | 2023-02-14 |
Family
ID=79269008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080102025.6A Pending CN115702549A (zh) | 2020-06-19 | 2020-06-19 | 一种振荡器电路 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11973465B2 (zh) |
| EP (1) | EP4156506A4 (zh) |
| CN (1) | CN115702549A (zh) |
| WO (1) | WO2021253453A1 (zh) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7154349B2 (en) * | 2004-08-11 | 2006-12-26 | Qualcomm, Incorporated | Coupled-inductor multi-band VCO |
| US20130296217A1 (en) * | 2010-10-21 | 2013-11-07 | Cornell University | Oscillator circuit and system |
| US8294528B2 (en) * | 2010-12-28 | 2012-10-23 | Qualcomm Incorporated | Wideband multi-mode VCO |
| US9172402B2 (en) * | 2012-03-02 | 2015-10-27 | Qualcomm Incorporated | Multiple-input and multiple-output carrier aggregation receiver reuse architecture |
| US9444473B2 (en) * | 2014-09-09 | 2016-09-13 | Qualcomm Incorporated | Increased synthesizer performance in carrier aggregation/multiple-input, multiple-output systems |
| US9819307B2 (en) * | 2015-06-19 | 2017-11-14 | Qualcomm Incorporated | Low power current re-using transformer-based dual-band voltage controlled oscillator |
| CN106921345A (zh) * | 2015-12-24 | 2017-07-04 | 华为技术有限公司 | 一种压控振荡器、正交压控振荡器及通信系统 |
| US20170244361A1 (en) * | 2016-02-19 | 2017-08-24 | Qualcomm Incorporated | Wide-band voltage-controlled oscillator (vco) with switched inductor circuit |
| CN107437938B (zh) * | 2016-05-25 | 2020-11-06 | 深圳骏通微集成电路设计有限公司 | 一种压控振荡器电路 |
| CN111756329A (zh) * | 2016-11-04 | 2020-10-09 | 华为技术有限公司 | 双模振荡器及多相位振荡器 |
| TWI606688B (zh) * | 2017-01-20 | 2017-11-21 | Voltage controlled oscillation circuit | |
| CN108494397B (zh) * | 2018-01-22 | 2021-09-21 | 西安电子科技大学 | 一种压控振荡器电路和锁相环 |
| CN111293981B (zh) * | 2020-02-13 | 2023-10-03 | 电子科技大学 | 基于电磁混合耦合的四模振荡器 |
-
2020
- 2020-06-19 WO PCT/CN2020/097263 patent/WO2021253453A1/zh unknown
- 2020-06-19 CN CN202080102025.6A patent/CN115702549A/zh active Pending
- 2020-06-19 EP EP20940813.7A patent/EP4156506A4/en active Pending
-
2022
- 2022-12-14 US US18/065,681 patent/US11973465B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US11973465B2 (en) | 2024-04-30 |
| EP4156506A4 (en) | 2023-07-26 |
| US20230109745A1 (en) | 2023-04-13 |
| WO2021253453A1 (zh) | 2021-12-23 |
| EP4156506A1 (en) | 2023-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101256697B1 (ko) | 가변 집적형 인덕터 | |
| US7209017B2 (en) | Symmetrical linear voltage controlled oscillator | |
| US8436689B2 (en) | Multiple phase voltage controlled oscillator including a resonant circuit and negative resistance circuit | |
| US7902934B2 (en) | Variable inductor, and oscillator and communication system using the same | |
| KR100498484B1 (ko) | 넓은 주파수 대역에서 일정한 이득을 가지는 전압 제어발진기 및 그 방법 | |
| JP2007174552A (ja) | 発振回路およびそれを内蔵した半導体集積回路 | |
| WO2009054760A1 (en) | A dual-band coupled vco | |
| EP3158640B1 (en) | A radio frequency oscillator | |
| US20140159825A1 (en) | Voltage controlled oscillator with low phase noise and high q inductive degeneration | |
| CN103888079A (zh) | 用于lc振荡器的可变电感器 | |
| KR20050053779A (ko) | 순환형 기하구조 발진기들 | |
| US20100123536A1 (en) | Tunable capacitively loaded transformer providing switched inductance for rf/microwave integrated circuits | |
| US7227425B2 (en) | Dual-band voltage controlled oscillator utilizing switched feedback technology | |
| US11817865B2 (en) | Oscillator | |
| JP2012253561A (ja) | 電圧制御発振器 | |
| CN115702549A (zh) | 一种振荡器电路 | |
| Tiebout | Design and Optimization of RFCMOS-Circuits for Integrated PLL’s and Synthesizers | |
| CN114337549A (zh) | 一种基于片上变压器的宽带数控振荡器 | |
| Casha et al. | 1.6-GHz low power low phase noise quadrature phase locked loop with on chip DC-DC converter for wide tuning range | |
| Zou et al. | A low phase noise wideband VCO with 8-shaped inductor | |
| CN117914266A (zh) | 数控振荡器 | |
| Kim et al. | Dual Band Series Coupled CMOS LC Quadrature VCO Using Reconfigurable LC Tank |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |