CN115701238A - Sub-pixel structure, pixel arrangement structure, mask, display panel and equipment - Google Patents

Sub-pixel structure, pixel arrangement structure, mask, display panel and equipment Download PDF

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CN115701238A
CN115701238A CN202110827209.5A CN202110827209A CN115701238A CN 115701238 A CN115701238 A CN 115701238A CN 202110827209 A CN202110827209 A CN 202110827209A CN 115701238 A CN115701238 A CN 115701238A
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sub
pixel
layer
pixel structure
display
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李志林
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Guangdong Oppo Mobile Telecommunications Corp Ltd
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Priority to CN202110827209.5A priority Critical patent/CN115701238A/en
Priority to PCT/CN2022/099378 priority patent/WO2023000881A1/en
Publication of CN115701238A publication Critical patent/CN115701238A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]

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Abstract

The embodiment of the application relates to a sub-pixel structure, pixel arrangement structure, mask, display panel and equipment, the sub-pixel structure is including anode layer, luminescent material layer and the cathode layer of range upon range of setting, at least one in anode layer, luminescent material layer and the cathode layer is first target layer, first target layer be equipped with central zone and connect in two at least radiation area of central zone, wherein, arbitrary two are adjacent there is a depressed area between the radiation area. In the embodiment of the application, by arranging the radiation area protruding outwards, the circumference of the outer contour of the sub-pixel can be enlarged on the premise that the light-emitting areas are the same, so that the heat dissipation area of the sub-pixel is enlarged, the heat dissipation capacity of the sub-pixel is improved, and the service life of the display device is prolonged.

Description

Sub-pixel structure, pixel arrangement structure, mask, display panel and equipment
Technical Field
The embodiment of the application relates to the technical field of display, in particular to a sub-pixel structure, a pixel arrangement structure, a mask, a display panel and equipment.
Background
With the development of display technology, higher requirements are placed on the display brightness of the display device, and the display brightness is generally increased by increasing the driving current. However, at the device level, the increase in current density accumulates a large amount of heat in the light emitting device and causes accelerated aging of the light emitting device, greatly affecting the life span of the display apparatus.
Disclosure of Invention
The embodiment of the application provides a sub-pixel structure, a pixel arrangement structure, a mask, a display panel and a device, and the heat dissipation performance can be optimized, so that the service life of the display device is prolonged.
A sub-pixel structure comprises an anode layer, a light-emitting material layer and a cathode layer which are arranged in a stacking mode, wherein at least one of the anode layer, the light-emitting material layer and the cathode layer is a first target layer, the first target layer is provided with a central area and at least two radiation areas connected to the central area, and a sunken area is arranged between any two adjacent radiation areas.
A pixel arrangement structure comprises a plurality of sub-pixels, and the sub-pixels adopt the sub-pixel structure.
A mask is used for manufacturing the pixel arrangement structure, and is provided with a plurality of openings which are respectively used for forming a plurality of sub-pixels in a one-to-one correspondence mode.
A display panel comprises a first display area and a second display area, wherein the pixel size of the first display area is smaller than that of the second display area, and the first display area adopts the pixel arrangement structure.
A display device comprises a photosensitive device and the display panel, wherein the photosensitive device is arranged corresponding to the first display area of the display panel.
The sub-pixel structure comprises an anode layer, a light emitting material layer and a cathode layer which are arranged in a stacked mode, at least one of the anode layer, the light emitting material layer and the cathode layer is a first target layer, the first target layer is provided with a central area and at least two radiation areas connected to the central area, and a depressed area exists between any two adjacent radiation areas. In the embodiment of the application, by arranging the radiation area protruding outwards, the circumference of the outer contour of the sub-pixel can be enlarged on the premise that the light-emitting areas are the same, so that the heat dissipation area of the sub-pixel is enlarged, the heat dissipation capacity of the sub-pixel is improved, and the service life of the display device is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in related arts, the drawings used in the description of the embodiments or related arts will be briefly described below, it is obvious that the drawings in the description below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a partial schematic view of a display device according to an embodiment;
FIG. 2 is a schematic cross-sectional view along AA' of the display device of the embodiment of FIG. 1;
FIG. 3 is a schematic diagram of a film structure of a sub-pixel structure according to an embodiment;
FIG. 4 is a schematic top view of the sub-pixel structure of the embodiment shown in FIG. 3;
FIG. 5 is a schematic top view of a sub-pixel structure according to an embodiment;
FIG. 6 is a second schematic top view of a sub-pixel structure according to an embodiment;
FIG. 7 is a third schematic top view of a sub-pixel structure according to an embodiment;
FIG. 8 is a fourth schematic diagram illustrating a top view of a sub-pixel structure according to an embodiment;
FIG. 9 is a fifth schematic top view of a sub-pixel structure according to an embodiment;
FIG. 10 is a second schematic diagram illustrating a film structure of a sub-pixel structure according to an embodiment;
FIG. 11 is a third diagram illustrating a film structure of a sub-pixel structure according to an embodiment;
fig. 12 is a schematic structural view of a heat sink according to an embodiment;
FIG. 13 is a schematic view of a pixel arrangement according to an embodiment;
FIG. 14 is a second schematic diagram of a pixel arrangement according to an embodiment;
FIG. 15 is a schematic structural diagram of a first mask according to an embodiment;
FIG. 16 is a schematic structural diagram of a second mask according to an embodiment;
FIG. 17 is a schematic structural diagram of a third mask according to an embodiment;
FIG. 18 is a schematic view of a partial structure of a display panel according to an embodiment;
FIG. 19 is a schematic cross-sectional diagram illustrating a driving circuit in a display panel according to an embodiment.
Description of the element reference numerals:
a display panel: 10; the first display area: 11; the second display area: 12; a photosensitive device: 20; a first mask: 31; a second mask: 32, a first step of removing the first layer; a third mask: 33; anode layer: 100, respectively; a light-emitting material layer: 200 of a carrier; a cathode layer: 300, respectively; a central region: 510; radiation area: 520, respectively; a recessed area: 530; mesopore: 500, a step of; the heat dissipation piece: 600, preparing a mixture; a support structure: 610; graphene: 620; a drive circuit: 700; grid electrode: 701, performing heat treatment on the mixture; a source electrode: 702; drain electrode: 703; a source contact structure: 704; a drain contact structure: 705; substrate: 711; buffer layer: 712; a gate insulating layer: 713; interlayer insulating layer: 714; a planarization layer: 715; pixel definition layer: 716.
Detailed Description
To facilitate an understanding of the embodiments of the present application, the embodiments of the present application will be described more fully below with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. The embodiments of the present application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the embodiments of this application belong. The terminology used herein in the description of the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the embodiments of the present application, it is to be understood that the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on methods or positional relationships shown in the drawings, and are only used for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the devices or elements referred to must have specific orientations, be constructed in specific orientations, and be operated, and thus, should not be construed as limiting the embodiments of the present application.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first target tier may be referred to as a second target tier, and similarly, a second target tier may be referred to as a first target tier, without departing from the scope of the present application. Both the first target layer and the second target layer are target layers, but they are not the same target layer.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. In the description of the present application, "a plurality" means at least one, e.g., one, two, etc., unless explicitly specified otherwise.
Fig. 1 is a partial schematic view of a display device according to an embodiment, and fig. 2 is a schematic cross-sectional view of the display device according to the embodiment of fig. 1 along an AA'. The display device may be a smart phone, a tablet computer, a game device, an Augmented Reality (AR) device, a notebook, a desktop computing device, a wearable device, or the like. For convenience of understanding, the display device is exemplified as a mobile phone in the following. Referring to fig. 1 and 2 in combination, in the present embodiment, the display apparatus includes a display panel 10 and a photosensitive device 20.
With continued reference to fig. 2, the display panel 10 includes a first display region 11 and a second display region 12 that are contiguous. The shape of the first display area 11 may be a circle, a rectangle, an ellipse, a polygon, an irregular shape, etc., which is not limited in the present invention. The shape of the second display area 12 may also be a ring shape, a rectangle shape, etc., which is not limited by the present invention. Wherein, the light sensing device 20 is at least partially disposed corresponding to the first display region 11. Exemplarily, the light sensing device 20 may be disposed below the first display region 11, and the light sensing device 20 is used to transmit and/or receive an optical signal through the first display region 11 of the display panel 10. That is, the first display region 11 is a region located above the photosensitive device 20. In the embodiment of the present application, the upper direction refers to a direction pointing from a back case of the display device to the display screen, and the lower direction refers to a direction pointing from the display screen to the back case.
The light sensing device 20 performs testing and control based on optical parameters by receiving light. Wherein, photosensitive device 20 can be the camera, and photosensitive device 20 still can be ambient light sensor, optical distance sensor (for example, infrared sensor, laser sensor, proximity sensor, distance sensor, optical distance sensor), structured light module, time of flight (TOF) lens module, optics fingerprint sensor etc..
For convenience of explanation, in the embodiments of the present application, the photosensitive device 20 is taken as an example of a camera. It can be understood that the driving circuit is usually formed in a plurality of functional layers stacked together, and the functional layers may reduce the incident light intensity of the camera, and may even cause the diffraction problem of the image, which greatly affects the imaging quality of the camera. Therefore, for the under-screen camera scheme, the imaging quality can be effectively improved by reducing the pixel size of the first display area 11, so that the user experience is improved.
Fig. 3 is a schematic diagram of a film structure of a sub-pixel structure according to an embodiment, and referring to fig. 3, in this embodiment, the sub-pixel structure includes an anode layer 100, a light emitting material layer 200, and a cathode layer 300, which are stacked. The anode layer 100 and the cathode layer 300 are used to commonly apply a driving voltage or a driving current to the light emitting material layer 200 to commonly control the light emitting material layer 200 to emit light. The sub-pixel in this embodiment can be understood as a Light Emitting device, and the Light Emitting device can be, but is not limited to, an Organic Light-Emitting diode (OLED), a Quantum Dot Light Emitting diode (QLED), and the like. The light emitting devices can be organic light emitting diodes with different colors, such as red OLEDs, green OLEDs, blue OLEDs and the like, and the light emitting materials of the light emitting devices with different colors are different, so that display with different colors is realized, and full-color display of the display equipment is realized.
Fig. 4 is a schematic top view of the sub-pixel structure of fig. 3, wherein the schematic top view is a schematic view observed along a direction perpendicular to a display surface of the display device. Referring to fig. 3 and 4, at least one of the anode layer 100, the light emitting material layer 200 and the cathode layer 300 is a first target layer, and the first target layer is provided with a central region 510 and at least two radiation regions 520 connected to the central region 510, for example, the number of the radiation regions 520 may be three, four or five, which is not limited in this embodiment. Wherein a recessed region 530 is present between any two adjacent radiation regions 520. The distance between a point on the overall outer contour formed by the central region 510 and the radiation region 520 and the center of the central region 510 is defined as a center distance, and if there is a variation trend that the center distance is decreased and then increased in a certain region range of the overall outer contour, the region range is considered as a concave region 530. Taking the embodiment of fig. 4 as an example, the region pointed by the arrow is a recessed region 530.
It should be noted that although the embodiment of fig. 4 shows a circular structure as the boundary between the central region 510 and the radiation region 520, the above boundary can be understood as a virtual boundary, i.e., in an actual sub-pixel structure, the above boundary does not exist. Moreover, the central region 510 and the radiation region 520 can be formed simultaneously in the same process.
It is understood that the heat generation of the subpixel structure in the display device can be referred to as the following formula (1).
Figure BDA0003174039490000071
Wherein Q is the heat dissipated by the sub-pixel structure, J is the current density flowing through the sub-pixel structure, A is the light-emitting area of the sub-pixel structure, and k is a constant. According to the above formula, the heat Q dissipated by the sub-pixel structure is proportional to the light-emitting area A and J 2 Is in direct proportion. Therefore, the larger the influence of the current density on the amount of heat emitted by the sub-pixel when emitting light is, as compared with the light emitting area. As described above with reference to fig. 1, in order to improve the light receiving effect of the corresponding region of the light sensing device 20, the sub-pixels with smaller size are disposed in the first display region 11, and the sub-pixels with larger size are disposed in the second display region 12. Therefore, it is necessary to make the sub-pixels located in the first display region 11 exhibit a larger light emission luminance to enable uniform light emission of the display device. It can be understood that the luminance of the sub-pixels is proportional to the current density, and therefore, the heat emitted by the sub-pixels of the first display area 11 when emitting light is much larger than that of the sub-pixels of the second display area 12, which results in a faster aging speed of the sub-pixels of the first display area 11.
Referring to fig. 3, for a sub-pixel structure, heat inside the sub-pixel structure may be dissipated from the sidewalls to the external environment. The side wall refers to an outer wall of the sub-pixel structure perpendicular to the display surface. The heat dissipation area of the sidewall is proportional to the perimeter of the outline of the top view and proportional to the thickness of the sub-pixel structure, where the thickness is the dimension of the sub-pixel structure in the first direction, and the first direction is the stacking direction of the anode layer 100, the light emitting material layer 200 and the cathode layer 300. That is, it is considered that the larger the ratio of the perimeter of the outer contour of the sub-pixel structure to the light emitting area is, the better the heat dissipation performance of the sub-pixel structure is. Therefore, compared with the sub-pixel structure in the related art, in the embodiment, by providing the radiation region 520 protruding outward, on the premise that the light emitting areas are the same, the perimeter of the outer contour of the sub-pixel can be enlarged, that is, the heat dissipation area of the sub-pixel is enlarged, so that the heat dissipation capability of the sub-pixel is improved, and the service life of the display device is further prolonged.
Wherein a plurality of the radiation regions 520 may uniformly surround the central region 510. Fig. 5 is a schematic top view of an exemplary sub-pixel structure, and referring to fig. 5, five radiation regions 520 are connected to a central region 510. In addition, the shapes of the plurality of radiation regions 520 may be different, for example, fig. 6 is a second schematic top view of the sub-pixel structure of an embodiment, referring to fig. 6, the shapes of two radiation regions 520 may be different from the shapes of the other two radiation regions 520, and in other embodiments, the shapes of the radiation regions 520 may also be a cone, a rectangle, or the like. In addition, the size of each radiation region 520 is not limited in this embodiment, fig. 7 is a third schematic top view of the sub-pixel structure of the embodiment, and referring to fig. 4 and 7, even if four radiation regions 520 are included, the size of each radiation region 520 can be set as required. Fig. 8 is a fourth schematic top view of a sub-pixel structure according to an embodiment, referring to fig. 8, a plurality of radiation regions 520 may be disposed at intervals, such that a connection portion between the radiation regions 520 and the central region 510 forms a recess 530, and the recess 530 is located between two adjacent radiation regions 520. It should be noted that the number, shape and size of the radiation regions 520 are not specifically limited in this embodiment, and the above-mentioned fig. 5 to 8 are only used for exemplary illustration and are not used to limit the protection scope of the present application.
In one embodiment, the orthographic projection of the other layer except the first target layer on the virtual plane completely covers the orthographic projection of the first target layer on the virtual plane. Through the arrangement mode, the light-emitting shape of the sub-pixel structure can correspond to the shape of the first target layer, and the process difficulty in the preparation process of other layers except the first target layer can be reduced, so that the preparation yield of the sub-pixel structure is improved.
With continued reference to fig. 3, in one embodiment, the anode layer 100, the light emitting material layer 200, and the cathode layer 300 may all be the first target layer, and orthographic projections of the anode layer 100, the light emitting material layer 200, and the cathode layer 300 on the virtual plane coincide. Through the arrangement mode, the anode layer 100, the light-emitting material layer 200 and the cathode layer 300 can be prepared by using the mask plate with the same pattern, so that the design difficulty of the mask plate is reduced.
In one embodiment, the curvature of any point on the outer contour of the radiation region 520 is less than the curvature threshold. The curvature threshold value can be determined jointly according to the process limit size of the lithography equipment, the size of the sub-pixel structure and the like. It can be understood that if the curvature of a certain point is too large, the optical problems such as diffraction concentration are easily caused, so that the photosensitive effect of photosensitive devices such as a camera is influenced, the imaging effect is further influenced, and the use experience of a user is influenced. In this embodiment, the outer contour with a larger curvature is provided for the radiation region 520, so that the problem of diffraction concentration can be effectively avoided, and the performance of the photosensitive device is improved. Further, the shape of the radiation region 520 may be a lobe shape as shown in any one of fig. 4 to 8.
Fig. 9 is a fifth schematic top view of a sub-pixel structure according to an embodiment, and referring to fig. 9, in the present embodiment, outer contours of adjacent radiation regions 520 are smoothly connected through rounded corners. By arranging the fillets in smooth connection, the connection part can be in a smooth curve shape, the overlarge curvature of the outer contour connection part of the adjacent radiation areas 520 is avoided, the problem of diffraction concentration is further solved, and the performance of the photosensitive device is improved.
In one embodiment, the central region 510 is circular or elliptical in shape. In this embodiment, by using the circular or oval central region 510, the distance between the center of the sub-pixel structure and any point on the outer contour can be made to be similar, so as to avoid the problem that the difference of the heat dissipation performance of the sub-pixel structure in different directions is too large, and further avoid the problem that the aging speed of the sub-pixel structure in different directions is different. It will be appreciated that the shape of the central region is also not limited to circular or elliptical, and in some embodiments, the central region may also be rectangular, parallelogram, etc.
Fig. 10 is a second diagram illustrating a film structure of a sub-pixel structure according to an embodiment, and referring to fig. 10, in an embodiment, at least one of the anode layer 100, the light emitting material layer 200, and the cathode layer 300 is a second target layer, and the sub-pixel structure is further provided with a middle hole 500 penetrating the second target layer along a first direction, where the first direction is a stacking direction of the anode layer 100, the light emitting material layer 200, and the cathode layer 300. It should be noted that although in the embodiment of fig. 10, the mesopores 500 completely penetrate through the anode layer 100, the light emitting material layer 200 and the cathode layer 300, in some embodiments, the mesopores 500 may penetrate through only one or two film layers, for example, only the light emitting material layer 200 and the anode layer 100.
It can be understood that the more the film layer the mesopores 500 pass through, the better the heat dissipation effect, but at the same time the light emitting performance of the sub-pixel is influenced to some extent. Similarly, the larger the area of the middle hole 500, the better the heat dissipation effect, but at the same time, the light emitting performance of the sub-pixel is also affected to some extent. Therefore, the above parameters can be specifically set as needed.
With continued reference to fig. 10, in one embodiment, the subpixel structure and the mesopore 500 are both shaped as a centrosymmetric pattern, and the center of symmetry of the subpixel structure coincides with the center of symmetry of the mesopore 500 in the first direction. Inside the sub-pixel structure, the center of the sub-pixel most easily accumulates heat, and thus, by disposing the center hole 500 at the center of the sub-pixel structure, the heat dissipation effect of the sub-pixel structure can be greatly improved.
Fig. 11 is a third schematic view illustrating a film structure of a sub-pixel structure according to an embodiment, referring to fig. 11, in one embodiment, the sub-pixel structure further includes a heat dissipation member 600 filled in the central hole 500, wherein a thermal conductivity of the heat dissipation member 600 is greater than a thermal conductivity of the second target layer. In this embodiment, the heat conductivity of the heat dissipation member 600 is still greater than the heat conductivity of the air, and therefore, compared with the middle hole 500 structure, the heat dissipation effect of the sub-pixel structure can be further improved by providing the heat dissipation member 600 with a large heat conductivity.
Fig. 12 is a schematic structural diagram of a heat dissipation element 600 of an embodiment, and referring to fig. 12, in one embodiment, the heat dissipation element 600 includes a support structure 610 and graphene 620.
The support structure 610 is filled in the central hole 500, and the electric conductivity coefficient of the support structure 610 is smaller than the electric conductivity threshold, a cavity is arranged in the support structure 610, and the graphene 620 is filled in the cavity in the support structure 610. Wherein the support structure 610 is further configured to isolate the graphene 620 from the second target layer. Through setting up bearing structure 610, can avoid having each rete contact in graphite alkene 620 and the sub-pixel structure of electrically conductive performance to avoid the sub-pixel structure to take place the short circuit phenomenon, thereby improve the stability and the reliability of sub-pixel structure. Wherein, the support structure 610 may adopt SiO 2 And the like, and the embodiment is not limited. In addition, although the whole body of the filled graphene 620 is a cylindrical structure in the embodiment of fig. 12, in other embodiments, the graphene 620 may be uniformly and dispersedly distributed in the support structure 610 in the form of small particles.
Further, since the thermal conductivity of the graphene 620 is directional, heat can be well conducted in a predetermined direction. The graphene 620 is a two-dimensional periodic honeycomb lattice structure formed by connecting a reticular six-membered ring structure, so that the graphene 620 can be warped into a zero-dimensional fullerene, and can also be rolled into a one-dimensional carbon nanotube or stacked into three-dimensional graphite.
It is understood that the embodiments of the present application are not limited to the manufacturing method of the sub-pixel structure, and any manufacturing method capable of forming the sub-pixel structure is within the scope of the present application. For example, the anode layer 100, the light emitting material layer 200, and the cathode layer 300 may be formed first, and then the mesopores 500 may be formed and the heat sink 600 may be filled at the positions of the mesopores 500.
The embodiment of the application also provides a pixel arrangement structure, which comprises a plurality of sub-pixels, wherein the sub-pixels adopt the sub-pixel structure. Specifically, the pixel arrangement structure comprises a plurality of pixel units, wherein each pixel unit comprises a first sub-pixel, a second sub-pixel and at least one third sub-pixel; the first sub-pixel, the second sub-pixel and the third sub-pixel respectively adopt the sub-pixel structure. The first sub-pixel may be a red sub-pixel, the second sub-pixel may be a blue sub-pixel, and the third sub-pixel may be a green sub-pixel. Based on the sub-pixel structure of the embodiment of fig. 4, the present application provides two pixel arrangements for further exemplary illustration.
Fig. 13 is a schematic view of a pixel arrangement structure according to an embodiment, and referring to fig. 13, in the embodiment, each pixel unit includes a red sub-pixel, a blue sub-pixel, and a green sub-pixel, and a plurality of sub-pixels in the same pixel unit are uniformly arranged in one direction.
Fig. 14 is a second schematic view of a pixel arrangement structure according to an embodiment, and referring to fig. 14, in the present embodiment, each of the pixel units includes a red sub-pixel, a blue sub-pixel, and two green sub-pixels. The two green sub-pixels are respectively provided with centers positioned at two first vertexes of a virtual quadrangle, and the two first vertexes are positioned on a diagonal line of the virtual quadrangle. A red subpixel is separate from the green subpixel, the red subpixel having a center located at a second vertex of the virtual quadrilateral. A blue subpixel is separated from the green subpixel and the red subpixel, respectively, the blue subpixel having a center located at a third vertex of the virtual quadrilateral, the second vertex and the third vertex being located on another diagonal of the virtual quadrilateral.
The embodiment of the application further provides a mask for manufacturing the pixel arrangement structure, wherein the mask is provided with a plurality of openings, and the plurality of openings are respectively used for forming a plurality of sub-pixels in a one-to-one correspondence manner. Specifically, the mask of the embodiment may be understood as a mask group, that is, specifically, the mask group includes a plurality of masks, and the plurality of masks in the mask group are commonly used for preparing the pixel arrangement structure.
Taking the pixel arrangement structure shown in the embodiment of fig. 13 as an example, the mask of the embodiment includes a first mask 31, a second mask 32, and a third mask 33. Fig. 15 is a schematic structural diagram of a first mask 31 according to an embodiment, fig. 16 is a schematic structural diagram of a second mask 32 according to an embodiment, and fig. 17 is a schematic structural diagram of a third mask 33 according to an embodiment. Referring to fig. 13 and 15 to 17, the first mask 31 has a plurality of first openings, the plurality of first openings correspond to the plurality of blue sub-pixels in the embodiment of fig. 13, respectively, one to one, the second mask 32 has a plurality of second openings, the plurality of second openings correspond to the plurality of red sub-pixels in the embodiment of fig. 13, respectively, one to one, the third mask 33 has a plurality of third openings, and the plurality of third openings correspond to the plurality of green sub-pixels in the embodiment of fig. 13, respectively. It should be noted that the area of each opening may be slightly larger than the area of the corresponding sub-pixel, that is, the orthographic projection of each sub-pixel on each mask completely falls into each opening. In the pixel arrangement structure formed by the mask set provided by the embodiment, the shape of each sub-pixel structure is optimized, so that the heat dissipation performance can be improved.
Fig. 18 is a schematic partial structure diagram of the display panel of an embodiment, and referring to fig. 18, the display panel 10 includes a first display area 11 and a second display area 12, where a pixel size of the first display area 11 is smaller than a pixel size of the second display area 12, and the first display area 11 adopts the pixel arrangement structure as described above. That is, the second display region 12 may still employ the pixel arrangement structure in the related art. It is understood that the difficulty of manufacturing the odd-shaped sub-pixel structure in the first display region 11 is higher than that of the related art, and thus the above-mentioned odd-shaped sub-pixel structure may not be adopted in the second display region 12. Moreover, the sub-pixel structure with smaller size adopted by the first display area 11 can effectively reduce the gap between the adjacent sub-pixels on the premise of keeping the same pixel density as that of the second display area 12, thereby improving the light receiving effect of the photosensitive device of the display panel 10.
Fig. 19 is a schematic cross-sectional view of a driving circuit in a display panel according to an embodiment, wherein the cross-sectional view of fig. 19 is perpendicular to the display surface of the display panel. Referring to fig. 19, the display panel in the present embodiment includes a substrate and a plurality of functional layers formed on the substrate. The base plate may include Polyimide (PI) substrates 711 and buffer layers 712 alternately arranged in sequence, for example, the base plate includes two Polyimide (PI) substrates 711 and two buffer layers 712 alternately arranged in sequence. It is understood that the base plate may also include a greater number of Polyimide (PI) substrates 711 and buffer layers 712. Two gate insulating layers 713 (a GI1 layer and a GI2 layer), an interlayer insulating layer 714, and a planarization layer 715 are further provided on the substrate, and a driver circuit 700 is further formed in the gate insulating layer 713, the interlayer insulating layer 714, and the planarization layer 715. Specifically, the first driving circuit 700 includes a gate 701, a source 702, a drain 703, a source contact structure 704 and a corresponding drain contact structure 705, and the anode layer 100 in the sub-pixel structure is electrically connected to the source 702 through a driving trace L. It can be understood that, due to the limited layout area, the driving circuit 700 of the sub-pixel of the first display area 11 can be led out to the outside of the first display area 11 through the driving trace L for setting, thereby avoiding the problem of light shielding of the trace and the driving circuit 700.
The driving circuit 700 of the present embodiment may be a 7T1C driving circuit. In addition, the driving circuit 700 may have other numbers of transistors, so that a lightweight display device is implemented with a smaller number of transistors, or a more flexible display function is implemented with a larger number of transistors, for example, other types of driving circuits such as 3T1C, 6T1C, and 6T2C may be used.
With continued reference to fig. 18, in one embodiment, the pixel density of the first display area 11 and the second display area 12 is the same. For example, the pixel density of the first display area 11 and the second display area 12 may be 400ppi, so as to ensure that the area of the camera under the display effect screen is completely consistent with the area of the normal screen. Further, in one embodiment, the pixel size of the first display region 11 is 1/3 to 2/3 of the pixel size of the second display region 12, so as to achieve better light transmittance, thereby ensuring the photosensitive effect of the photosensitive device.
The embodiment of the application also provides a display device as shown in fig. 1, which comprises the photosensitive device 20 and the display panel 10 as described above. Wherein the light sensing device 20 is disposed corresponding to the first display region 11 of the display panel 10. In this embodiment, by adopting the aforementioned sub-pixel structure, the middle hole 500 and the heat dissipation member 600, the heat transfer can be accelerated, so as to reduce the aging damage of the device caused by heat accumulation, thereby improving the service life of the area under the screen of the light sensing device 20.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express a few embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, variations and modifications can be made without departing from the concept of the embodiments of the present application, and these embodiments are within the scope of the present application. Therefore, the protection scope of the patent of the embodiment of the application shall be subject to the appended claims.

Claims (18)

1. A sub-pixel structure is characterized by comprising an anode layer, a light-emitting material layer and a cathode layer which are arranged in a stacked mode, wherein at least one of the anode layer, the light-emitting material layer and the cathode layer is a first target layer, the first target layer is provided with a central area and at least two radiation areas connected to the central area, and a depressed area exists between any two adjacent radiation areas.
2. The sub-pixel structure of claim 1, wherein an orthogonal projection of a layer other than the first target layer on a virtual plane completely covers an orthogonal projection of the first target layer on the virtual plane, the virtual plane being perpendicular to a first direction, the first direction being a stacking direction of the anode layer, the light emitting material layer, and the cathode layer.
3. The sub-pixel structure of claim 2, wherein the anode layer, the light emitting material layer, and the cathode layer are all the first target layer, and orthographic projections of the anode layer, the light emitting material layer, and the cathode layer on the virtual plane coincide.
4. The sub-pixel structure of claim 1, wherein at least one of the anode layer, the light emitting material layer, and the cathode layer is a second target layer, the sub-pixel structure further being provided with a central hole penetrating the second target layer in a first direction, the first direction being a stacking direction of the anode layer, the light emitting material layer, and the cathode layer.
5. The sub-pixel structure of claim 4, wherein the sub-pixel structure and the mesopore are each shaped as a centrosymmetric pattern, and a center of symmetry of the sub-pixel structure and a center of symmetry of the mesopore coincide with each other in the first direction.
6. The subpixel structure of claim 4 further comprising a heat spreader filling said central aperture, wherein said heat spreader has a thermal conductivity greater than a thermal conductivity of said second target layer.
7. The subpixel structure of claim 6 wherein said heat spreader comprises:
the support structure is filled in the middle hole, the conductivity coefficient of the support structure is smaller than a conductivity threshold value, and a cavity is arranged in the support structure;
graphene filled in the cavity in the support structure;
wherein the support structure is further configured to isolate the graphene from the second target layer.
8. The sub-pixel structure of any of claims 1-7, wherein a plurality of the radiating regions uniformly surround the central region.
9. The sub-pixel structure of any of claims 1-7, wherein the outer contours of adjacent radiation areas are smoothly connected by rounded corners.
10. A sub-pixel structure according to any of claims 1 to 7, wherein the curvature of any point on the outer contour of the radiation area is less than a curvature threshold.
11. The sub-pixel structure of any of claims 1-7, wherein the radiating region is shaped as a lobe.
12. The sub-pixel structure of any of claims 1-7, wherein the central region is circular or elliptical in shape.
13. A pixel arrangement comprising a plurality of sub-pixels, the sub-pixels employing a sub-pixel structure as claimed in any one of claims 1 to 12.
14. A mask for making the pixel arrangement structure of claim 13, wherein the mask is provided with a plurality of openings for forming a plurality of the sub-pixels in a one-to-one correspondence.
15. A display panel comprising a first display region and a second display region, wherein the pixel size of the first display region is smaller than the pixel size of the second display region, and the first display region employs the pixel arrangement structure of claim 13.
16. The display panel according to claim 15, wherein the pixel density of the first display region and the second display region is the same.
17. The display panel according to claim 15, wherein a pixel size of the first display region is 1/3 to 2/3 of a pixel size of the second display region.
18. A display apparatus comprising a light sensing device and the display panel according to any one of claims 15 to 17, wherein the light sensing device is provided corresponding to a first display region of the display panel.
CN202110827209.5A 2021-07-21 2021-07-21 Sub-pixel structure, pixel arrangement structure, mask, display panel and equipment Pending CN115701238A (en)

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CN108807491B (en) * 2018-06-29 2020-09-01 武汉华星光电半导体显示技术有限公司 Pixel arrangement structure
CN109148721B (en) * 2018-08-28 2021-05-04 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
CN109768073B (en) * 2019-02-26 2021-04-27 武汉华星光电半导体显示技术有限公司 Pixel arrangement structure of organic light-emitting diode display and display panel
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