CN115696971A - Organic light-emitting display panel, manufacturing method thereof and display device - Google Patents
Organic light-emitting display panel, manufacturing method thereof and display device Download PDFInfo
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- CN115696971A CN115696971A CN202110824379.8A CN202110824379A CN115696971A CN 115696971 A CN115696971 A CN 115696971A CN 202110824379 A CN202110824379 A CN 202110824379A CN 115696971 A CN115696971 A CN 115696971A
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Abstract
The application provides an organic light emitting display panel, a manufacturing method thereof and a display device, wherein the organic light emitting display panel comprises: the organic light emitting diode comprises an array substrate, an organic light emitting structure, a packaging cover plate and an interface modification layer; the array substrate and the packaging cover plate are oppositely arranged, the organic light-emitting structure is arranged on one side of the array substrate, which faces the packaging cover plate, and the interface modification layer is arranged on one side of the array substrate, which faces away from the packaging cover plate, and/or one side of the packaging cover plate, which faces away from the array substrate; the interface modification layer is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2. In the organic light-emitting display panel, the manufacturing method thereof and the display device provided by the application, the interface modification layer is formed on the lower surface of the array substrate and/or the upper surface of the packaging cover plate through the sputtering process so as to reduce the influence of external light on the thin film transistor, thereby reducing leakage current, improving the stability of the thin film transistor and improving the display flicker or jitter problem.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to an organic light emitting display panel, a manufacturing method thereof, and a display device.
Background
Compared with many Display devices, an Organic Light Emitting Display (OLED) has many advantages such as being solid-state, self-luminous, wide viewing angle, wide color gamut, fast response speed, high luminous efficiency, high brightness, high contrast, ultra-thin and ultra-Light, low power consumption, wide working temperature range, capable of manufacturing large-sized and flexible panels, and simple in manufacturing process, and can realize truly flexible Display, and most meets the requirements of people on future displays.
The OLED display panel generally includes an array substrate, an organic light emitting structure formed on the array substrate, and a cover glass disposed opposite to the array substrate. The organic light emitting structure comprises an anode, an organic light emitting layer and a cathode which are sequentially formed on an array substrate, wherein the array substrate comprises a plurality of Thin Film Transistors (TFT), and the Thin Film transistors are arranged in an array.
In the prior art, the thin film transistor is generally made of Low Temperature polysilicon (LTPS for short). However, thin film transistors fabricated using LTPS are very sensitive to light. When external light is incident into the display panel, a part of the light will not be incident into the array substrate under the anode due to the reflection of the anode, and another part of the light will directly irradiate onto the thin film transistor in the array substrate. In addition, light emitted from the organic light emitting structure may also be irradiated onto the thin film transistor due to reflection by the cover glass and the cathode. The direct light and the reflected light are irradiated on the thin film transistor, so that the thin film transistor generates leakage current due to light excitation, and the stability of the thin film transistor is reduced.
Therefore, how to solve the problem that the current display panel generates leakage current due to the incidence of light rays and further reduces the stability of the thin film transistor is a technical problem to be solved urgently by the technical personnel in the field.
Disclosure of Invention
In view of the above, the present disclosure provides an organic light emitting display panel, a manufacturing method thereof, and a display device, so as to solve the problem that the display panel in the prior art generates a leakage current due to a thin film transistor caused by light incidence, thereby reducing the stability of the thin film transistor.
In order to solve the above technical problem, the present invention provides an organic light emitting display panel, including: the organic light emitting diode comprises an array substrate, an organic light emitting structure, a packaging cover plate and an interface modification layer;
the array substrate and the packaging cover plate are oppositely arranged, the organic light-emitting structure is arranged on one side of the array substrate, which faces the packaging cover plate, and the interface modification layer is arranged on one side of the array substrate, which faces away from the packaging cover plate, and/or on one side of the packaging cover plate, which faces away from the array substrate;
the interface modification layer is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2.
Optionally, in the organic light emitting display panel, the thickness of the interface modification layer ranges from 10nm to 1000 nm.
Optionally, in the organic light emitting display panel, the organic light emitting structure includes an anode, an organic light emitting layer, a cathode, and a pixel defining layer, the organic light emitting layer is disposed between the anode and the cathode, the pixel defining layer defines a plurality of pixel regions on the array substrate, and each pixel region is provided with an organic light emitting diode formed by the anode, the organic light emitting layer, and the cathode.
Optionally, in the organic light emitting display panel, the pixel defining layer is made of a black organic material.
Optionally, the organic light emitting display panel further includes a polarizing plate disposed on a side of the package cover plate facing away from the array substrate, and the interface modification layer is located between the polarizing plate and the package cover plate.
Optionally, in the organic light emitting display panel, the array substrate includes a plurality of thin film transistors, and the plurality of thin film transistors are arranged in an array and are all low temperature polysilicon thin film transistors.
Correspondingly, the invention also provides a manufacturing method of the organic light-emitting display panel, which comprises the following steps:
step one, providing an array substrate and a packaging cover plate;
step two, forming an organic light-emitting structure on the array substrate;
step three, oppositely arranging the array substrate and the packaging cover plate and carrying out vacuum bonding;
and fourthly, forming an interface modification layer on one side of the array substrate, which faces away from the packaging cover plate, and/or one side of the packaging cover plate, which faces away from the array substrate.
Optionally, in the method for manufacturing an organic light emitting display panel, after forming an interface modification layer on a side of the array substrate facing away from the package cover plate and/or on a side of the package cover plate facing away from the array substrate, the method further includes: and providing a polarizer, and attaching the polarizer to the side of the packaging cover plate, which faces away from the array substrate.
Correspondingly, the invention also provides a display device which comprises the organic light-emitting display panel.
In the organic light-emitting display panel, the manufacturing method thereof and the display device provided by the invention, the interface modification layer is formed on the lower surface of the array substrate and/or the upper surface of the packaging cover plate through the sputtering process so as to reduce the influence of external light on the thin film transistor, thereby reducing leakage current, improving the stability of the thin film transistor and improving the display flicker or jitter problem.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and, together with the description, serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic structural diagram of an organic light emitting display panel according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of an organic light emitting display panel according to a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of an organic light emitting display panel according to a third embodiment of the present invention.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted.
[ EXAMPLES ] A method for producing a semiconductor device
Fig. 1 is a schematic structural diagram of an organic light emitting display panel according to a first embodiment of the invention. As shown in fig. 1, the organic light emitting display panel 10 includes: the array substrate comprises an array substrate 1, an organic light-emitting structure 2, a packaging cover plate 3 and an interface modification layer 4; the array substrate 1 and the package cover plate 3 are arranged oppositely, the organic light-emitting structure 2 is arranged on one side of the array substrate 1 facing the package cover plate 3, and the interface modification layer 4 is arranged on one side of the package cover plate 3 opposite to the array substrate 1; the interface modification layer 4 is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2.
Specifically, the organic light emitting display panel 10 includes an array substrate 1 and a package cover plate 3, which are disposed opposite to each other, the organic light emitting structure 2 is disposed on a side of the array substrate 1 facing the package cover plate 3 (i.e., an upper surface of the array substrate 1), and the interface modification layer 4 is disposed on a side of the package cover plate 3 opposite to the array substrate 1 (i.e., an upper surface of the package cover plate 3). The organic light emitting display panel 10 further includes a polarizer 5, the polarizer 5 is disposed on a side of the package cover plate 3 facing away from the array substrate 1, and the interface modification layer 4 is disposed between the polarizer 5 and the package cover plate 3.
The array substrate 1 includes a substrate (reference numeral is not shown in the figure) and an array layer (not shown in the figure) formed on the substrate, wherein the array layer includes a plurality of thin film transistors arranged in an array. In this embodiment, the plurality of thin film transistors are all low temperature polysilicon thin film transistors, that is, the array layer is a low temperature polysilicon thin film transistor array layer.
The organic light emitting structure 2 includes an anode, an organic light emitting layer, a cathode, and a pixel defining layer (not shown in the figure), the organic light emitting layer is disposed between the anode and the cathode, the pixel defining layer defines a plurality of pixel regions on the array substrate 1, and each pixel region is provided with an organic light emitting diode formed by the anode, the organic light emitting layer, and the cathode.
The substrate of the array substrate 1 and the package cover plate 3 are both made of a transparent insulating material, such as a transparent glass substrate or a transparent plastic substrate. The interface modification layer 4 on the package cover plate 3 is formed by sputtering an organic material or a metal material, the refractive indexes of the organic material and the metal material are both required to be more than 2, and the thickness range of the interface modification layer 4 is 10nm to 1000 nm.
Correspondingly, the invention also provides a manufacturing method of the organic light-emitting display panel. Referring to fig. 1, the method for manufacturing an organic light emitting display panel includes:
step one, providing an array substrate 1 and a packaging cover plate 3;
step two, forming an organic light-emitting structure 2 on the array substrate 1;
step three, oppositely arranging the array substrate 1 and the packaging cover plate 3 and carrying out vacuum bonding;
and fourthly, forming an interface modification layer 4 on one side of the packaging cover plate 3, which is opposite to the array substrate 1.
Specifically, the steps one to three can be completed by adopting the existing process, and the invention is not described in detail. In the fourth step, an interface modification layer 4 is formed on the package cover plate 3 by a sputtering process. The interface modification layer 4 is made of a high N value material, which may be an organic material having a refractive index of 2 or more or the metal material.
The interface modification layer 4 is sputtered on the packaging cover plate 3 by adopting a high-N-value material, so that part of external light can be prevented from irradiating the thin film transistor below the packaging cover plate 3 through the packaging cover plate 3, the influence of the external light on the thin film transistor is reduced, the leakage current is reduced, the stability of the thin film transistor is improved, the fluctuation of the brightness of the light is reduced, and the problem of display flicker or jitter is solved.
In this embodiment, the substrate of the array substrate 1 and the package cover plate 3 are both made of transparent glass substrates, the refractive index of the transparent glass substrates is about 1.5, the refractive index of the interface modification layer 4 is 2.5, and the thickness is 60nm. Experiments prove that the interface modification layer 4 is additionally arranged on the upper surface of the packaging cover plate 3, so that the reflectivity can be improved by nearly one time, and the influence of external light on the thin film transistor is effectively reduced.
Preferably, the pixel defining layer is made of a black organic material. In this manner, the influence of light on the thin film transistor can be further reduced.
After the fourth step, the method for manufacturing the organic light emitting display panel further includes providing a polarizer 5, and attaching the polarizer 5 to a side of the package cover plate 3 facing away from the array substrate 1.
Accordingly, the present invention also provides a display device including the organic light emitting display panel 10 as described above.
In this embodiment, although the organic light emitting display panel 10 employs the LTPS technology to fabricate the thin film transistor, the interface modification layer 4 is provided to make the thin film transistor more stable, so as to achieve better outdoor display effect, and as the Low Temperature Polycrystalline Oxide (LTPO) technology is employed to fabricate the thin film transistor, a lower refresh frequency is employed to reduce power consumption.
[ example two ]
Fig. 2 is a schematic structural diagram of an organic light emitting display panel according to a second embodiment of the present invention. As shown in fig. 2, the organic light emitting display panel 20 includes: the array substrate comprises an array substrate 1, an organic light-emitting structure 2, a packaging cover plate 3 and an interface modification layer 4; the array substrate 1 and the package cover plate 3 are arranged oppositely, the organic light-emitting structure 2 is arranged on one side of the array substrate 1 facing the package cover plate 3, and the interface modification layer 4 is arranged on one side of the array substrate 1 opposite to the package cover plate 3; the interface modification layer 4 is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2.
Specifically, the organic light emitting display panel 20 includes an array substrate 1 and a package cover plate 3, which are disposed opposite to each other, the organic light emitting structure 2 is disposed on a side of the array substrate 1 facing the package cover plate 3 (i.e., an upper surface of the array substrate 1), and the interface modification layer 4 is disposed on a side of the array substrate 1 facing away from the package cover plate 3 (i.e., a lower surface of the array substrate 1).
The difference between this embodiment and the first embodiment is that the interface modification layer 4 is formed on the lower surface of the array substrate 1, not on the upper surface of the package cover plate 3. That is, the interface positions modified by the high N material are different. The high-N-value material is sputtered on the lower surface of the array substrate 1, so that total reflection of the corresponding interface can be reduced, and further, the influence of total reflected light on the thin film transistor is reduced.
Correspondingly, the invention also provides a manufacturing method of the organic light-emitting display panel. With reference to fig. 2, the method for manufacturing the organic light emitting display panel includes:
step one, providing an array substrate 1 and a packaging cover plate 3;
step two, forming an organic light-emitting structure 2 on the array substrate 1;
step three, oppositely arranging the array substrate 1 and the packaging cover plate 3 and carrying out vacuum bonding;
and fourthly, forming an interface modification layer 4 on one side of the array substrate 1, which is back to the packaging cover plate 3.
Specifically, an interface modification layer 4 is sputtered on the array substrate 1 by using a high-N material, so that total reflection of light can be reduced, the influence of external light on the thin film transistor is reduced, leakage current is reduced, the fluctuation of light emitting brightness is reduced, and the problem of flicker or jitter is solved.
After the fourth step, the method for manufacturing the organic light emitting display panel further includes providing a polarizer 5, and attaching the polarizer 5 to a side of the package cover plate 3 facing away from the array substrate 1.
In this embodiment, the substrate of the array substrate 1 and the package cover plate 3 are both made of transparent glass substrates, the refractive index of the transparent glass substrates is about 1.5, the refractive index of the interface modification layer 4 is 2.5, and the thickness is 100nm. Experiments prove that the interface modification layer 4 is additionally arranged on the lower surface of the array substrate 1, so that the influence of external light on the thin film transistor can be effectively reduced.
Accordingly, the present invention also provides a display device including the organic light emitting display panel 20 as described above.
Similarly, although the organic light emitting display panel 20 employs the LTPS technology to fabricate the thin film transistor, the interface modification layer 4 provides better stability of the thin film transistor, and can achieve better outdoor display effect, and as the Low Temperature Polycrystalline Oxide (LTPO) technology is employed to fabricate the thin film transistor, the Low refresh frequency is employed to reduce power consumption.
[ EXAMPLE III ]
Please refer to fig. 3, which is a schematic structural diagram of an organic light emitting display panel according to a third embodiment of the present invention. As shown in fig. 3, the organic light emitting display panel 30 includes: the array substrate comprises an array substrate 1, an organic light-emitting structure 2, a packaging cover plate 3 and an interface modification layer 4; the array substrate 1 and the package cover plate 3 are oppositely arranged, the organic light-emitting structure 2 is arranged on one side of the array substrate 1 facing the package cover plate 3, and the interface modification layer 4 is arranged on one side of the package cover plate 3 opposite to the array substrate 1 and one side of the array substrate 1 opposite to the package cover plate 3; the interface modification layer 4 is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2.
Specifically, the organic light emitting display panel 30 includes an array substrate 1 and a package cover plate 3 which are oppositely disposed, the organic light emitting structure 2 is disposed on one side of the array substrate 1 facing the package cover plate 3 (i.e., the upper surface of the array substrate 1), and the interface modification layer 4 is disposed on one side of the array substrate 1 facing away from the package cover plate 3 (i.e., the lower surface of the array substrate 1) and one side of the package cover plate 3 facing away from the array substrate 1 (i.e., the upper surface of the package cover plate 3).
The difference between this embodiment and the first embodiment is that the interface modification layer 4 is formed on the upper surface of the package cover 3 and the lower surface of the array substrate 1, rather than on the upper surface of the package cover 3. That is, there are two interface sites decorated with high N materials, rather than only one. high-N-value materials are respectively sputtered on the lower surface of the array substrate 1 and the upper surface of the packaging cover plate 3, so that the influence of external light on the thin film transistor can be effectively reduced.
Correspondingly, the invention also provides a manufacturing method of the organic light-emitting display panel. With reference to fig. 3, the method for manufacturing the organic light emitting display panel includes:
step one, providing an array substrate 1 and a packaging cover plate 3;
step two, forming an organic light-emitting structure 2 on the array substrate 1;
step three, oppositely arranging the array substrate 1 and the packaging cover plate 3 and carrying out vacuum bonding;
and step four, forming an interface modification layer 4 on one side of the array substrate 1, which is back to the package cover plate 3, and one side of the package cover plate 3, which is back to the array substrate 1.
Specifically, after the fourth step, the method for manufacturing the organic light emitting display panel further includes providing a polarizer 5, and attaching the polarizer 5 to a side of the package cover plate 3 facing away from the array substrate 1.
In this embodiment, the substrate of the array substrate 1 and the package cover plate 3 are both made of transparent glass substrates, the refractive index of the transparent glass substrates is about 1.5, the refractive index of the interface modification layer 4 is 2.5, the thickness of the interface modification layer 4 formed on the array substrate 1 is 100nm, and the thickness of the interface modification layer 4 formed on the package cover plate 3 is 60nm. Experiments prove that the interface modification layers 4 are additionally arranged on the lower surface of the array substrate 1 and the upper surface of the packaging cover plate 3 respectively, so that the influence of external light on the thin film transistor can be effectively reduced.
Accordingly, the present invention also provides a display device including the organic light emitting display panel 30 as described above.
The above drawings are merely schematic illustrations of the organic light emitting display panel provided by the present invention. For clarity, the shapes of the elements and the number of the elements in the above-mentioned figures are simplified and some elements are omitted, so that those skilled in the art can make changes according to actual needs, and the changes are within the protection scope of the present invention and will not be described herein.
It should be noted that, in the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
In summary, according to the organic light emitting display panel, the manufacturing method thereof and the display device provided by the invention, the interface modification layer is formed on the lower surface of the array substrate and/or the upper surface of the encapsulation cover plate through the sputtering process, so as to reduce the influence of external light on the thin film transistor, thereby reducing the leakage current, improving the stability of the thin film transistor and improving the display flicker or jitter problem.
The foregoing is a further detailed description of the present application in connection with specific preferred embodiments and it is not intended to limit the present application to the particular forms set forth herein. For those skilled in the art to which the present application pertains, several simple deductions or substitutions can be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.
Claims (9)
1. An organic light emitting display panel, comprising: the organic light emitting diode comprises an array substrate, an organic light emitting structure, a packaging cover plate and an interface modification layer;
the array substrate and the packaging cover plate are oppositely arranged, the organic light-emitting structure is arranged on one side of the array substrate facing the packaging cover plate, and the interface modification layer is arranged on one side of the array substrate facing away from the packaging cover plate and/or one side of the packaging cover plate facing away from the array substrate;
the interface modification layer is formed by sputtering an organic material or a metal material, and the refractive indexes of the organic material and the metal material are both more than 2.
2. The organic light emitting display panel of claim 1, wherein the interface modifying layer has a thickness ranging from 10nm to 1000 nm.
3. The organic light emitting display panel according to claim 1, wherein the organic light emitting structure comprises an anode, an organic light emitting layer disposed between the anode and the cathode, a cathode, and a pixel defining layer defining a plurality of pixel regions on the array substrate, each of the pixel regions having an organic light emitting diode formed by the anode, the organic light emitting layer, and the cathode disposed therein.
4. The organic light emitting display panel according to claim 3, wherein the pixel defining layer is made of a black organic material.
5. The organic light-emitting display panel of claim 1, further comprising a polarizer disposed on a side of the package cover plate facing away from the array substrate, wherein the interface modification layer is disposed between the polarizer and the package cover plate.
6. The organic light emitting display panel of claim 1, wherein the array substrate comprises a plurality of thin film transistors, and the plurality of thin film transistors are arranged in an array and are all low temperature polysilicon thin film transistors.
7. A method of manufacturing an organic light emitting display panel, comprising:
step one, providing an array substrate and a packaging cover plate;
step two, forming an organic light-emitting structure on the array substrate;
step three, oppositely arranging the array substrate and the packaging cover plate and carrying out vacuum bonding;
and fourthly, forming an interface modification layer on one side of the array substrate, which faces away from the packaging cover plate, and/or one side of the packaging cover plate, which faces away from the array substrate.
8. The method of claim 7, further comprising, after forming an interface modification layer on a side of the array substrate facing away from the package cover and/or a side of the package cover facing away from the array substrate: and providing a polarizer, and attaching the polarizer to the side of the packaging cover plate, which faces away from the array substrate.
9. A display device, comprising: the organic light emitting display panel according to any one of claims 1 to 6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110824379.8A CN115696971A (en) | 2021-07-21 | 2021-07-21 | Organic light-emitting display panel, manufacturing method thereof and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110824379.8A CN115696971A (en) | 2021-07-21 | 2021-07-21 | Organic light-emitting display panel, manufacturing method thereof and display device |
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| CN115696971A true CN115696971A (en) | 2023-02-03 |
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| CN202110824379.8A Pending CN115696971A (en) | 2021-07-21 | 2021-07-21 | Organic light-emitting display panel, manufacturing method thereof and display device |
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