CN115691721A - Channel ion distribution determination method and device based on ion implantation - Google Patents
Channel ion distribution determination method and device based on ion implantation Download PDFInfo
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 65
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Abstract
The application relates to the technical field of ion implantation, in particular to a channel ion distribution determining method and device based on ion implantation, which can solve the problem that the calculated channel ion distribution situation is far from the actual channel ion distribution situation in the prior art to a certain extent. The channel ion distribution determining method based on ion implantation comprises the following steps: injecting ions into the target material for multiple times according to preset parameters; obtaining a back scattering proton energy spectrum after ions are injected through preset parameters each time, wherein the back scattering proton energy spectrum is used for representing the distribution of crystal lattice damage in a target material; and determining the number of channel ions with channel effect after each ion implantation based on the crystal lattice damage distribution and the relation between the crystal lattice damage distribution and the number of the channel ions, wherein the number of the channel ions is used for reflecting the distribution condition of the ions in the target material.
Description
Technical Field
The present disclosure relates to the field of ion implantation technology, and in particular, to a method and an apparatus for determining channel ion distribution based on ion implantation.
Background
In the simulation of integrated circuit process, ion implantation process is the dominant doping technology in the manufacture of integrated circuits. Ion implantation is a process of introducing dopant ions with high kinetic energy into a semiconductor material with the purpose of changing the electrical and optical properties of the semiconductor material.
In the process of ion implantation into a semiconductor, the collisions experienced by the ions within the target are a random process. When the ion incidence direction is parallel to the main crystal axis direction of the semiconductor material, channeling effect is generated, wherein the channeling effect refers to the effect that ions move along a channel and rarely collide with particles in a target, so that the ions can be distributed at a deep position due to long range. Ions implanted along the channel are commonly referred to as channel ions; when the ion incidence direction is not parallel to the main crystal axis of the semiconductor material, a series of collisions continuously occur between the ions and atoms in the target after the ions enter the target, the energy of the ions is gradually lost, and meanwhile, the atoms in the target are also displaced due to the collisions, and in this case, the ions are distributed at shallow positions due to small range.
In the ion implantation process, atoms in the target inevitably displace due to collision, so that crystal lattices of the semiconductor material are damaged, and along with the continuous implantation of ions, the damage degree of the crystal lattices is gradually increased, and the number of channel ions is gradually reduced. In the prior art, an ion implantation profile is described by using a biperson function, and the ion implantation profile can show the distribution condition of ions in a target, particularly the distribution condition of channel ions in the target, but the biperson function is calculated based on the lattice structure in the target before ion implantation, and does not consider damage to the lattice in the target and accumulation of the damage after each ion implantation, so that the obtained channel ion distribution condition is far from the actual channel ion distribution condition.
Disclosure of Invention
In order to solve the problem that the calculated channel ion distribution situation is far from the actual channel ion distribution situation in the prior art, the application provides a channel ion distribution determining method and device based on ion implantation.
The embodiment of the application is realized as follows:
the embodiment of the application provides a channel ion distribution determination method based on ion implantation, which comprises the following steps:
injecting ions into a target material for multiple times according to preset parameters, wherein the target material is a crystal target or an amorphous target, and the preset parameters are used for determining the motion condition of the ions in the target material;
acquiring a back scattering proton energy spectrum after ions are injected through the preset parameters each time, wherein the back scattering proton energy spectrum is used for representing the distribution of crystal lattice damage in a target material;
and determining the channel ion number of the channeling effect after each ion implantation based on the crystal lattice damage distribution and the relation between the crystal lattice damage distribution and the channel ion number, wherein the channel ion number is used for reflecting the distribution condition of the ions in the target material.
In some embodiments, the relationship between the lattice damage profile and the channel ion population is represented by the following equation:
wherein,
indicating the number of channel ions in which channeling occurs;
representing said distribution of lattice damage in the target material after each implantation of ions into the target material;
the ion flux represents the number of ions passing through a unit area;
representing the depth of implantation of said ions in said target material;
represents a ratio between channel ions and the ions in a perfect crystal when the ions are implanted into the perfect crystal when the target material is a crystal target;
represents the ratio between channel ions and said ions in a perfect amorphous when said ions are implanted in a perfect amorphous when said target material is an amorphous target.
In some embodiments, when the target material is a crystalline target, the target material is a crystalline target
Is 0; when the target material is an amorphous target, the method comprises
Is 0.
In some embodiments, the crystalline target is a single crystal of silicon and the amorphous target is silicon dioxide, silicon nitride, or photoresist.
In some embodiments, obtaining a backscattered proton energy spectrum comprises: the backscattered proton energy spectrum measured by a gold silicon surface barrier type semiconductor detector is acquired after each ion implantation.
In some embodiments, the ion implantation into the target material is performed in multiple shots, comprising: and injecting the ions into the target material by an ion implanter in multiple times.
In some embodiments, the preset parameters include the energy level of the ions, the ion implantation dosage at each implantation, the implantation rate, the implantation direction and the crystal plane normal angle, and the orientation of the target material.
Another embodiment of the present application provides an apparatus for determining a channel ion distribution based on ion implantation, including:
the injection module is used for injecting ions into the target material for multiple times according to preset parameters, wherein the preset parameters comprise the energy level of the ions, the ion injection dosage during each injection, the injection rate, the injection direction and crystal plane normal included angle and the orientation of the target material, and the target material is a crystal target or an amorphous target;
the acquisition module is used for acquiring a back scattering proton energy spectrum after ions are injected through the preset parameters each time, and the back scattering proton energy spectrum is used for representing the crystal lattice damage distribution in the target material;
and the determining module is used for determining the channel ion quantity of the channeling effect after each ion injection based on the crystal lattice damage distribution and the relation between the crystal lattice damage distribution and the channel ion quantity, and the channel ion quantity is used for reflecting the distribution condition of the ions in the target material.
Yet another embodiment of the present application provides a computer device, which includes a memory and a processor, and the processor implements the steps of the method for determining a channel ion distribution based on ion implantation when executing the computer program.
The beneficial effect of this application: by acquiring the distribution condition of crystal lattice damage during each ion implantation, calculating the number of channel ions with channel effect during each ion implantation based on the distribution condition of crystal lattice damage, and fully considering the influence of accumulated crystal lattice damage caused by past ion implantation on the number of channel ions with channel effect during the current ion implantation, the determined number of channel ions is closer to a true value, and the distribution condition of channel ions is further closer to the actual distribution condition of channel ions.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can obtain other drawings without inventive labor.
Fig. 1 is a flowchart illustrating a method for determining a channel ion distribution based on ion implantation according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating the movement of ions in the target material under different preset parameters;
FIG. 3 is a diagram illustrating the variation of the channel ion quantity per occurrence of channeling in the case of multiple ion implantations;
FIG. 4 is a graph illustrating the variation of the damage distribution of the crystal lattice in the target material at each time after multiple ions are implanted according to an embodiment of the present application;
fig. 5 shows a block diagram of a channel ion distribution determining apparatus based on ion implantation provided in the present application.
Detailed Description
To make the objects, embodiments and advantages of the present application clearer, the following description of exemplary embodiments of the present application will clearly and completely describe the exemplary embodiments of the present application with reference to the accompanying drawings in the exemplary embodiments of the present application, and it is to be understood that the described exemplary embodiments are only a part of the embodiments of the present application, and not all of the embodiments.
It should be noted that the brief descriptions of the terms in the present application are only for convenience of understanding of the embodiments described below, and are not intended to limit the embodiments of the present application. These terms should be understood in their ordinary and customary meaning unless otherwise indicated.
The terms "first," "second," "third," and the like in the description and claims of this application and in the above-described drawings are used for distinguishing between similar or analogous objects or entities and not necessarily for describing a particular sequential or chronological order, unless otherwise indicated. It is to be understood that the terms so used are interchangeable under appropriate circumstances.
The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements is not necessarily limited to all elements expressly listed, but may include other elements not expressly listed or inherent to such product or apparatus.
The terms "disposed" and "connected" should be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Fig. 1 schematically shows a flowchart of a method for determining a channel ion distribution based on ion implantation according to an embodiment of the present application.
As shown in fig. 1, a method for determining a channel ion distribution based on ion implantation according to an embodiment of the present application is implemented by the following steps:
In some embodiments, the preset parameters include the energy level of the ions, the ion implantation dose per implantation, the implantation rate, the angle between the implantation direction and the normal to the crystallographic plane, and the orientation of the target material, which may be a crystalline target or an amorphous target.
In some embodiments, ions are implanted into the target material in multiple passes through the ion implanter. During the process of ion implantation into a target material, the impact that ions experience in the target is related to a predetermined parameter, in particular to the angle between the implantation direction and the normal of the crystal plane. When the ion implantation direction is parallel to the main crystal axis direction of the semiconductor material (at this time, the included angle between the implantation direction and the normal line of the crystal plane is 0), a channeling effect is generated, and the channeling effect refers to an effect that ions move along a channel and rarely collide with particles in a target, so that the ions can be distributed at a deep position due to a long range. Ions implanted along the channel are commonly referred to as channel ions; when the ion incidence direction is not parallel to the main crystal axis of the semiconductor material (at this time, the included angle between the injection direction and the normal line of the crystal plane is not equal to 0), the ions continuously collide with atoms in the target after entering the target, the energy of the ions is gradually lost, and the atoms in the target are also displaced due to collision, and under the condition, the ions are distributed at the position with shallow depth due to small range. Fig. 2 shows a schematic diagram of the motion of ions in the target material under different preset parameters, and the straight line with arrows in the diagram is used to indicate the motion direction of the ions.
In some embodiments, the crystalline target is a silicon wafer and the amorphous target is silicon dioxide, silicon nitride, or photoresist.
And step 120, obtaining a back scattering proton energy spectrum after ions are injected through preset parameters each time, wherein the back scattering proton energy spectrum is used for representing the crystal lattice damage distribution in the target material.
Research on channeling and its use has developed over the last decade. This aspect of work has become an important aspect in the field of "atomic collisions in solids" and has opened new avenues for the application of low energy nuclear physics. In the aspect of solid physics, channeling can be mainly used for measuring the amount and distribution of crystal lattice damage and determining the positions of foreign impurity atoms in crystal lattices, and in addition, the channeling has many applications in surface analysis research.
We measured the channeling of protons at an energy of 80 to 160keV and helium ions at 160keV in a silicon single crystal and compared it with theoretical calculations. The results show that the experiments and theory fit well with respect to the values of axial channel critical angle and minimum yield. In this embodiment, a 165keV proton beam is used as an analysis beam to measure the distribution of lattice damage by channeling.
If the angle between the crystal axis and the incident charged particle beam is changed
Measuring the backscatter yield, the yield will exhibit a sharp, left-right symmetric angular distribution when
The time yield is reduced to a minimum value, which is associated with random incidence: (
) Ratio of time
Only 10 -2 Magnitude. For crystals with lattice damage, since displaced atoms (i.e., interstitial atoms) caused by lattice damage are present in the channel space at this time, these atoms can also be combined with
The channel part in the incident beam is directly back-scattered, thereby improving
Backscatter yield in time. According to the fact that the channel part can only be backscattered with the displaced atoms, and the random part can be backscattered with all lattice atoms, the following can be obtained:
wherein
In order to shift the depth distribution of atoms,D 0 is the displacement atom depth distribution at the initial moment,
and
respectively represent
And
the yield (corresponding to the dose of the same incident ion) detected after back-scattering of the incident ion with the lattice atoms at depth t,
by a random factor, i.e. random at depth tRatio of fraction to total beam current (random fraction plus channel fraction). The particles in the channel part are continuously transferred to random parts due to the channel retreating process that the particles in the channel part are influenced by the scattering effect of outer layer electrons of displacement atoms and lattice atoms and the thermal vibration of the lattice atoms after entering the crystal, so that the particles are separated from the crystal by the channel retreating process
Is an increasing amount with depth.
In the experiment, the measurement was conducted separately
And
time-backscattered proton energy spectra, namely respectively directed and stochastic spectra, wherein
The random incidence angles in the process of representing the random spectrum test are all satisfied
The situation (2). Through the energy depth conversion relation, the back scattering proton energy spectrum is converted into a depth spectrum, and therefore the energy depth conversion relation can be obtained
And
. Then, on the premise of assuming a certain track-reversing mechanism, obtaining a random factor
Thereby obtaining a displacement atom depth distribution
This is what we say as the distribution of lattice damage.
The back scattering proton energy spectrum is obtained by measuring through a gold silicon surface barrier type semiconductor detector after ions are implanted every time.
In some embodiments, the relationship between the lattice damage profile and the channel ion population is represented by the following equation:
wherein,
indicating the number of channel ions in which channeling occurs;
representing a distribution of lattice damage in the target material after each implantation of ions into the target material;
the ion flux represents the number of ions passing through a unit area;
represents the implantation depth of ions in the target material;
represents the ratio between channel ions and ions in perfect crystals when ions are injected into the perfect crystals when the target material is a crystal target;
which represents the ratio between channel ions and ions in a perfect amorphous when ions are implanted into the perfect amorphous when the target material is an amorphous target.
In some embodiments, whenWhen the target material is a crystalline target,
is 0; when the target material is an amorphous target,
is 0.
In some embodiments, the preset parameters are set to: implanting silicon single crystal with neon ions of energy level 50keV at room temperature to set ion implantation flux
(the injection flux is determined according to injection metering and injection speed), the included angle between the injection direction and the normal line of the crystal plane is 7 degrees, and the included angle between the silicon single crystal and the normal line of the crystal plane is<110>And (4) orientation.
Through experiments, ions are injected into the perfect crystal according to preset parameters, and the proportion of the perfect crystal for generating the channel effect is obtained
Since the target material is a crystalline target, it is preferable that the target material is a crystalline target
Is 0.
According to preset parameters, ions are injected into a target material for the first time through an ion implanter, and the distribution of the crystal lattice damage after the ions are injected is determined through a back scattering proton energy spectrum obtained by measuring a gold silicon surface barrier type semiconductor detector
Measuring the implantation depth of the ion in the target material
。
Finally will
Distribution of lattice damage and channel separationThe relation between the sub-numbers obtains the channel ion number of the channel effect after the first ion implantation
。
When the ions are implanted for the second time, the energy level of the ions, the implantation flux, the included angle between the implantation direction and the normal line of the crystal face and the orientation of the target material can be reset, and after the ions are implanted for the second time, the crystal lattice damage is based on the accumulated damage after the ions are implanted for the first time and the second time, so the distribution of the crystal lattice damage measured for the second time and the orientation of the target material can be reset
Substituting the relationship between the crystal lattice damage distribution and the channel ion quantity to obtain the channel ion quantity with channel effect after the second ion implantation
。
And by analogy, performing ion implantation for the third time, the fourth time and the like, wherein the number of channel ions obtained by each calculation is influenced by accumulated crystal lattice damage caused by the past ion implantation, so that the number of channel ions generating the channel effect at each time is gradually reduced along with the increase of the ion implantation times. Fig. 3 is a schematic diagram illustrating the variation of the number of channel ions per occurrence of channeling in the case of implanting ions multiple times. As shown in fig. 3, since the degree of lattice damage can be approximately 0 at the beginning of ion implantation, relatively speaking, channeling is more obvious after implanting ions again under the condition, and a tailing phenomenon of ion distribution can be observed (see a first curve in fig. 3), wherein the longer the tailing is, which indicates that the deeper the implantation depth of the ions in the target material is, the more the channel ion quantity is. As the damage degree of the crystal lattice gradually accumulates with the multiple implantation of the ions, the periodicity of the crystal lattice is seriously damaged, so that the "tailing" phenomenon of the ion distribution gradually disappears, and the proportion of the ions having the channeling effect is also reduced (see the second curve to the fifth curve in fig. 3).
Fig. 4 is a schematic diagram illustrating a damage distribution change of a crystal lattice in a target material at each time after multiple ion implantations according to an embodiment of the present application, and as shown in fig. 4, before the ion implantation occurs, the damage of the crystal lattice of the target material may be considered as approximately 0 (see a first curve in fig. 4), and as the number of times of the ion implantation increases, the damage degree of the crystal lattice further occurs on the damage of the crystal lattice caused by the previous ion implantation due to the destruction of the periodicity of the crystal lattice (see a second curve to a fifth curve in fig. 4).
In the application, the distribution condition of the lattice damage is obtained during each ion implantation, the number of channel ions with the channel effect during each ion implantation is calculated based on the distribution condition of the lattice damage, and the influence of accumulated lattice damage caused by past ion implantation on the number of channel ions with the channel effect during the current ion implantation is fully considered, so that the determined number of the obtained channel ions is closer to a true value, and the distribution condition of the channel ions is further closer to the actual distribution condition of the channel ions.
Fig. 5 is a block diagram illustrating a structure of an ion implantation based channel ion distribution determination apparatus provided in the present application, and as shown in fig. 5, an ion implantation based channel ion distribution determination apparatus 500 includes: an injection module 510, an acquisition module 520, and a determination module 530, wherein:
an injection module 510, configured to inject ions into a target material multiple times according to preset parameters, where the target material is a crystalline target or an amorphous target, and the preset parameters are used to determine a motion condition of the ions in the target material;
an obtaining module 520, configured to obtain a backscattered proton energy spectrum after ions are injected through preset parameters each time, where the backscattered proton energy spectrum is used to characterize lattice damage distribution in the target material;
a determining module 530, configured to determine, based on the lattice damage distribution and the relationship between the lattice damage distribution and the channel ion number, the number of channel ions where a channel effect occurs after each ion implantation, where the number of channel ions is used to reflect the distribution of the ions in the target material.
The foregoing description, for purposes of explanation, has been presented in conjunction with specific embodiments. However, the foregoing discussion in some embodiments is not intended to be exhaustive or to limit the implementations to the precise forms disclosed above. Many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles and the practical application, to thereby enable others skilled in the art to best utilize the embodiments and various embodiments with various modifications as are suited to the particular use contemplated.
Claims (9)
1. A channel ion distribution determination method based on ion implantation is characterized by comprising the following steps:
injecting ions into a target material for multiple times according to preset parameters, wherein the target material is a crystal target or an amorphous target, and the preset parameters are used for determining the motion condition of the ions in the target material;
acquiring a back scattering proton energy spectrum after ions are injected through the preset parameters each time, wherein the back scattering proton energy spectrum is used for representing the distribution of crystal lattice damage in a target material;
and determining the channel ion number of the channeling effect after each ion implantation based on the crystal lattice damage distribution and the relation between the crystal lattice damage distribution and the channel ion number, wherein the channel ion number is used for reflecting the distribution condition of the ions in the target material.
2. The ion implantation-based channel ion distribution determining method of claim 1, wherein the relationship between the lattice damage distribution and the number of channel ions is expressed by the following formula:
wherein,
indicating the number of channel ions in which channeling occurs;
representing said distribution of lattice damage in the target material after each injection of ions into the target material;
the ion flux represents the number of ions passing through a unit area;
representing a depth of implantation of the ions in the target material;
representing the ratio between channel ions and said ions in a perfect crystal when said ions are implanted into said perfect crystal when said target material is a crystal target;
representing the ratio between channel ions and said ions in a perfect amorphous state when said ions are implanted in said target material being an amorphous target.
3. The method of claim 2, wherein the target material is a crystalline target and the channel profile is determined based on ion implantation
Is 0; when the target material is an amorphous target, the method comprises
Is 0.
4. The ion implantation-based channel ion distribution determining method of claim 1, wherein the crystalline target is a silicon single crystal, and the amorphous target is silicon dioxide, silicon nitride, or photoresist.
5. The ion implantation-based channel ion profile determination method of claim 1, wherein obtaining the backscattered proton energy spectrum comprises: the backscattered proton energy spectrum measured by a gold silicon surface barrier type semiconductor detector is acquired after each ion implantation.
6. The method of claim 1, wherein implanting ions into the target material in multiple passes comprises: and injecting the ions into the target material by an ion implanter in multiple times.
7. The method according to claim 1, wherein the predetermined parameters include an energy level of the ions, a dose of ion implantation for each implantation, an implantation rate, an angle between an implantation direction and a normal of a crystal plane, and an orientation of the target material.
8. An ion implantation-based channel ion distribution determination apparatus, comprising:
the injection module is used for injecting ions into a target material for multiple times according to preset parameters, the target material is a crystal target or an amorphous target, and the preset parameters are used for determining the movement condition of the ions in the target material;
the acquisition module is used for acquiring a back scattering proton energy spectrum after ions are injected through the preset parameters each time, and the back scattering proton energy spectrum is used for representing the crystal lattice damage distribution in the target material;
and the determining module is used for determining the channel ion quantity of the channeling effect after each ion injection based on the crystal lattice damage distribution and the relation between the crystal lattice damage distribution and the channel ion quantity, and the channel ion quantity is used for reflecting the distribution condition of the ions in the target material.
9. A computer device comprising a memory and a processor, the processor implementing the steps of the ion implantation based channel ion distribution determination method according to any one of claims 1 to 7 when executing a computer program.
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|---|
| 金汉生: "沟道效应和晶格损伤分布" * |
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