CN107523879A - A kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction - Google Patents
A kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000006698 induction Effects 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 44
- 238000002347 injection Methods 0.000 claims abstract description 38
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- 239000000758 substrate Substances 0.000 claims description 27
- 230000005291 magnetic effect Effects 0.000 claims description 20
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 95
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 15
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- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 230000005323 ferromagnetic ordering Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
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- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
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Abstract
The present invention discloses a kind of preparation method of the room-temperature ferromagnetic ZnO monocrystal thin films of ion implanting defect induction.Utilize the energy loss after the ion implanting to ZnO of molecular dynamics simulation different-energy and distribution, design multiple stacking injection condition, different-energy, the nonmagnetic elements of various dose are injected in ZnO monocrystal thin films prepared by molecular beam epitaxy technique or metal-organic chemical vapor deposition equipment technology so that the approaches uniformity in the range of certain film thickness is distributed total ion distribution with damage section after superposition.By controlling injection ion energy and dosage to regulate and control the distribution of Doped ions and defect state and quantity in zinc oxide monocrystalline film, the ZnO monocrystal thin films with room-temperature ferromagnetic of defect induction are obtained.Ion implanting can accurately control implantation dosage and inject the distribution of ion and defect, and the repeatability and stability of experiment are good.The ZnO film that this method obtains has stable room-temperature ferromagnetic, and keeps preferable single crystal characteristics, can be applied in Quantum Spin device.
Description
Technical field
The present invention relates to ZnO diluted semi-conductor thin-film preparing technical fields, more particularly to a kind of ion implanting defect to induce
Zno-based diluted semi-conductor thin-film preparation method.
Background technology
Dilute magnetic semiconductor is a kind of electric charge and spin attribute that can utilize electronics simultaneously, have ferromagnetic property and semiconductive concurrently
The spintronics material of energy, it can be used for developing the brand-new multifunction device based on spin.Early stage research concentrates on Mn bases
Iii-v dilute magnetic semiconductor.But the Curie temperature obtained is far below room temperature.Wide bandgap semiconductor GaN and ZnO is due to reason
The ferromagnetic ordering higher than room temperature can be achieved by prophesy, turn into the study hotspot of spintronics Material Field in recent years.At present
Through the room-temperature ferromagnetic for reporting a variety of transient metal doped ZnO.But the conclusion that different experimental groups provides is not consistent.
Existing problem concentrates on the stability and repeatability of dilute magnetic semiconductor magnetic source and magnetism of material.Many seminar's reports
The magnetic of road doped semiconductor derives from the magnetic clusters phase that transition metal ions is formed, rather than magnetic ion substitution semiconductor
The intrinsic ferromagnetic ordering of cation.In addition, the magnetic of the ZnO film of Experimental report and the preparation method of film and growth conditions are deposited
In the dependence of sensitivity, this causes people to begin to focus on effect of the defect state in ferromagnetic ordering is formed, and thus rises
This research field of defect induction ferromagnetism.At present, in the ZnO film that a variety of undoped or nonmagnetic elements are adulterated
It was observed that defect modulates ferromagnetism.For undoped ZnO film, the defects of causing ferromagnetic ordering state be various intrinsic defects, such as
Zinc vacancies, Lacking oxygen, zinc calking etc..Ferromagnetism caused by nonmagnetic elements doping is also attributed to microcosmic caused by doping lack
Fall into：Magnetic moments parallel can be aided in by adulterating the vacancy-like defects (Lacking oxygen, Zinc vacancies) introduced and clearance type defect (zinc gap)
Arrangement.In the preparation method of conventional ZnO diluted semi-conductor thin-films, such as using pulsed laser deposition technology, magnetron sputtering method, molten
Sol-gel etc., the generation of defect have randomness and uncontrollability, and primary point defect is extremely unstable, and this causes defect to aid in
Ferromagnetic stability and repeatability it is poor, people there is an urgent need to find it is a kind of efficiently, can induce the defects of ferromagnetic ordering and regulate and control
Means.
Ion implanting obtains extensive use as a kind of material modification new and high technology in semiconductor doping field.Tool
There is the ion beam incidence of certain energy into material, with the atom in material or molecule a series of phase interactions occur for ion beam
With, the gradual off-energy of incident ion, finally rest in material, and introduce in the material various rooms, interstitial atom etc. lack
Fall into.The present invention using ion implantation technique adulterates non magnetic ion in ZnO monocrystal thin films, by control injection ion energy with
The distribution of Doped ions and defect state and quantity in dosage regulation and control ZnO monocrystal thin films, obtain defect modulation has room temperature ferromagnetic
The ZnO monocrystal thin films of property.Compared with magnetron sputtering method or sol-gal process prepare ZnO polycrystalline magnetic films, on single crystal substrate
Ion implanting can accurately control implantation dosage and inject the distribution of ion and defect, the repeatability of experiment is more preferable.Meanwhile by
Then nonequilibrium doping means, ion implantation doping element are easier into the lattice of matrix, can obtain higher solid solution
Spend and be not easily formed cluster phase.
The content of the invention
The present invention provides a kind of preparation method of the zno-based diluted semi-conductor thin-film of ion implanting defect induction.
Because the profile of bolus injection ion is symmetrical Gaussian Profile, in order to obtain from film surface to certain thickness
Nearly uniform impurity and defect distribution in the range of degree, of the invention uses multiple stacking injection method, i.e., different using different-energy
The ion of dosage repeatedly injects so that total ion distribution and damage section are approximate equal in the range of certain film thickness after superposition
Even distribution, this is significant for the stability of ZnO film ferromagnetic ordering.The present invention comprises the following steps：
(1) there is certain ENERGY E using the simulation of SRIM programs1Energy of the ion incidence to ion after ZnO in target
Loss and distribution, obtain the perpendicular projection shadow journey R of incident ionp1With perpendicular projection shadow journey statistic bias Δ Rp1；
(2) energy is E1, dosage φ1Ion along random direction inject ZnO film after concentration distribution be theoretically height
This distribution：
X is depth of the ion from surface；
(3) repeat step (1), (2), a series of ENERGY E is designedi, dosage φiSo that total ion concentration is distributed after superposition
For constant, i.e. N (x)=N1(x)+N2(x)+N3(x)+... it is approximately constant；
(4) according to the injection condition that sets, be implanted sequentially in ZnO film different-energy, various dose doping from
Son.
Present invention injection ion is nonmagnetic elements ion, during what is be preferably closer to Zn Elements Atom coefficients has
Can be introduced etc. element ions such as the Ge of mass number, Se, Kr, after above-mentioned ion implanting in zno-based body more Zn rooms and
Interstitial atom.Room and Zn gaps are proved to effectively magnetic moments parallel can be aided in arrange in Zn.
Present invention injection ionic charge state is single charge ion.Single charge ion is obtained using magnetic analyzer, after accelerated
It is injected on target.The injection ion of different-energy can be obtained by changing accelerating potential.
Ion distribution depth x of the present invention is less than film thickness, that is, injects ion and be fully distributed in ZnO film, material
Characteristic is entirely the attribute of ZnO film material in itself.
In ion implanting experiment of the present invention, ion implanting direction will tilt 7 ° along crystallographic direction, to avoid ion implanting
When channelling effect.
According to currently preferred, injection ion energy range is 20KeV to 400Kev, and ion energy determines Impurity Distribution
Depth and shape, low energy ion is mainly distributed on film surface, and energy is higher, and ion distribution is deeper.
According to currently preferred, ion implantation dosage is 1013-1015/cm3, implantation dosage decision impurity concentration.
According to currently preferred, total ion concentration is 10 after multiple stacking injection19-1020/cm3Magnitude, ion distribution exist
Approaches uniformity in the range of certain film thickness.
In multiple stacking ion implanting of the present invention experiment, first inject high-energy, the ion of far firing range, reinject low energy,
The near ion of range, to ensure the matrix that injects every time closer to pure ZnO film.
There is no particular requirement for temperature in ion implanting experiment of the present invention, can inject at room temperature.
General ion-implanted semiconductor doping needs after annealing to repair lattice damage and activation injection ion.The present invention utilizes
The lattice defect that non magnetic ion implanting introduces is modulated to obtain room-temperature ferromagnetic ZnO film, therefore does not need this step of after annealing.
ZnO film of the present invention is high quality monocrystalline film, organic using molecular beam epitaxy (MBE) technology or metal
Prepared by compound chemical vapor deposition (MOCVD) method, substrate is sapphire, gallium nitride or silicon.
In one example, using radio frequency plasma accessory molecule beam epitaxy (RF-MBE) technology on a sapphire substrate
ZnO monocrystal thin films are prepared, are comprised the following steps：
(a) substrate cleans：Sapphire Substrate is dried up through trichloro ethylene after alcohol and hot deionized water cleaning with high-purity N 2；
(b) Sapphire Substrate cleaned is placed in MBE growth chambers, growth room's vacuum chamber be evacuated to base vacuum 1~2 ×
10-10mbar；
(c) substrate is heated to 750 DEG C, and Sapphire Substrate is annealed 30 minutes；
(d) reduce underlayer temperature to 250 DEG C, open oxygen plasma source, substrate is carried out oxygen plasma processing 20~
30 minutes, oxygen plasma power was 340W, oxygen flow 2.6sccm；
(e) keep oxygen plasma constant, heating underlayer temperature is to 450 DEG C, 320 DEG C of the temperature of Zn evaporation sources, described
Grown ZnO buffer, buffer layer thickness~10nm；
(f) underlayer temperature is raised to 650 DEG C, is kept oxygen plasma constant constant with Zn source temperatures, is prepared thickness
For 400nm ZnO epitaxial films.
When the present invention prepares thin magnetic film for magnetron sputtering method, sol-gal process etc. the generation of defect have randomness and
Uncontrollability, so as to influence the stability of ZnO ferromagnetic orderings and repeatability, ion energy is suitably injected by Theoretical Design
Amount and dosage, multiple stacking injection different-energy, different agent in high-quality ZnO single crystal film prepared by MBE or MOCVD technologies
The non magnetic ion of amount, obtain the zno-based diluted semi-conductor thin-film with room-temperature ferromagnetic.MOCVD and MBE technologies are to film system
The accurate control of standby condition ensure that the high-quality ZnO single crystal film prepared every time has similar physicochemical properties.Ion
Injection can accurately control implantation dosage and inject the distribution of ion and defect, experiment it is reproducible.Particularly, the present invention adopts
With multiple stacking injection method so that total ion distribution and damage section are approximate equal in the range of certain film thickness after injection
Even distribution, this is significant for the stability of ferromagnetic ordering.XRD tests show not other in ZnO film after injecting
Mutually generate, film keeps preferably monocrystalline.Room-temperature ferromagnetic single crystal ZnO dilute magnetic semiconductor has in spin electric device field
Important application prospect.
Brief description of the drawings
Fig. 1 is that energy is 300KeV, and dosage is 1 × 1015cm-2Kr+The Gaussian Profile of ion implanting ZnO monocrystal thin films
Scheme, ion concentration highest at average optical transmission shadow journey, both sides concentration symmetrically declines.
Fig. 2 is multiple stacking Kr+Nearly uniform impurity profile is obtained after ion implanting ZnO monocrystal thin films.Repeatedly injection
Condition is：Ion energy 300KeV, dosage 1 × 1015cm-2+ ion energy 170KeV, dosage 3.5 × 1014cm-2+ ion energy
90KeV, dosage 2.1 × 1014cm-2+ ion energy 50KeV, dosage 1 × 1014cm-2+ ion energy 20KeV, dosage 9 ×
1013cm-2.Total doping concentration is about 1.4 × 1020cm-3。
Fig. 3 is multiple stacking Ge+Nearly uniform impurity profile is obtained after ion implanting ZnO monocrystal thin films.Repeatedly injection
Condition is：Ion energy 300KeV, dosage 6 × 1014cm-2+ ion energy 200KeV, dosage 2 × 1014cm-2+ ion energy
100KeV, dosage 2 × 1014cm-2+ ion energy 30KeV, dosage 8 × 1013cm-2.Total doping concentration is about 7 × 1019cm-3。
Fig. 4 is the X-ray diffraction spectrogram of intrinsic ZnO and ion implanting ZnO semiconductive thin films.Shown in figure, except substrate
Al2O3(0006) outside diffraction maximum, ZnO (0002) and (0004) peak position are only existed, the peak type at the two peaks is sharp keen, high degree of symmetry, table
ZnO film remains in that good crystalline quality and single crystal characteristics after bright ion implanting.
Fig. 5 is intrinsic ZnO and ion implanting ZnO semiconductive thin films the magnetisation curve figure in 300K.
Embodiment
The present invention is further illustrated below by specific embodiment.Following examples are served only for carrying out further the present invention
Explanation, it is impossible to be interpreted as limiting the scope of the invention.Following specific technological parameters of example etc. are also only OK ranges
In an example, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment 1：Kr+Inject preparation and its room-temperature ferromagnetic of ZnO monocrystal thin films.
1. preparing ZnO monocrystal thin films using RF-MBE technologies, substrate is sapphire (0001) face：(1) by Sapphire Substrate
10min degreasings are boiled in trichloro ethylene；(2) it is cleaned by ultrasonic 10min with alcohol and hot deionized water respectively；(3) by sapphire
Substrate high-purity N 2 dries up；(4) Sapphire Substrate cleaned is placed in MBE growth chambers, growth room's vacuum chamber is evacuated to background
Vacuum 1~2 × 10-10mbar；(5) heat substrate to 750 DEG C anneal 30 minutes；(6) underlayer temperature is dropped to 250 DEG C, opens oxygen etc.
Plasma source, oxygen plasma is carried out to substrate and handled 20~30 minutes, oxygen plasma power is 340W, and oxygen flow is
2.6sccm；(6) underlayer temperature is heated up to 450 DEG C, 320 DEG C of the temperature of Zn evaporation sources, oxygen plasma is kept, in the substrate
Upper growth ZnO buffer, buffer layer thickness~10nm；(7) underlayer temperature is risen to 650 DEG C, keeps Zn source temperatures and oxygen etc.
Gas ions, the thick ZnO epitaxial films of 400nm are made.
2. the setting of multiple stacking ion implanting conditions：(1) 300KeV Kr is obtained using SRIM simulation programs+Injection
The perpendicular projection shadow journey of incident ion and perpendicular projection shadow journey statistic bias are respectively 94.1nm and 33.2nm after ZnO；(2) energy
For 300KeV, dosage is 1 × 1015cm-2Kr+Doped ions concentration distribution is Gaussian Profile after injection ZnO, average optical transmission shadow journey
Locate ion concentration highest, both sides concentration symmetrically declines (referring to Fig. 1)；(3) (1) is repeated, (2), designs multiple stacking ion implanting
Condition is as follows：300KeV, 1 × 1015cm-2+ 170KeV, 3.5 × 1014cm-2+ 90KeV, 2.1 × 1014cm-2+ 50KeV, 1 ×
1014cm-2+ 20KeV, 9 × 1013cm-2.Under the superposition injection condition, Kr+The distribution of ion from surface to 120nm in the range of be
Closely it is uniformly distributed, total doping concentration about 1.4 × 1020cm-3(referring to Fig. 2).
3. carry out ion implanting experiment：Single electric charge Kr is obtained using magnetic analyzer+, injection ZnO monocrystalline is reached after accelerated
On film target.Injection direction tilts 7 ° along crystallographic direction.The injection ion of different-energy can be obtained by changing accelerating potential.Four times
It is as follows to be superimposed injection experimentses：Ion accelerating voltage 300kV, implantation dosage 1 × 1015cm-2；Ion accelerating voltage is reduced to
170KV, implantation dosage 3.5 × 1014cm-2；Ion accelerating voltage is reduced to 90KV, implantation dosage 2.1 × 1014cm-2；By ion
Accelerating potential is reduced to 50KV, implantation dosage 1 × 1014cm-2；Ion accelerating voltage is reduced to 20KV, implantation dosage 9 × 1013cm-2；
4.XRD tests show except substrate Al2O3(0006) outside diffraction maximum, ZnO (0002) and (0004) peak position are only existed,
The peak type at the two peaks is sharp keen, high degree of symmetry, and ZnO film remains in that good crystalline quality and monocrystalline after showing ion implanting
Characteristic (referring to Fig. 4).SQUID test results show that film has obvious room-temperature ferromagnetic, and its saturation magnetization is in 300K
When be 18.5emu/cm3(referring to Fig. 5).
Embodiment 2：Ge+Inject preparation and its room-temperature ferromagnetic of ZnO monocrystal thin films.
1. preparing ZnO monocrystal thin films using RF-MBE technologies, substrate is sapphire (0001) face：(1) by Sapphire Substrate
10min degreasings are boiled in trichloro ethylene；(2) it is cleaned by ultrasonic 10min with alcohol and hot deionized water respectively；(3) by sapphire
Substrate high-purity N 2 dries up；(4) Sapphire Substrate cleaned is placed in MBE growth chambers, growth room's vacuum chamber is evacuated to background
Vacuum 1~2 × 10-10mbar；(5) heat substrate to 750 DEG C anneal 30 minutes；(6) underlayer temperature is dropped to 250 DEG C, opens oxygen etc.
Plasma source, oxygen plasma is carried out to substrate and handled 20~30 minutes, oxygen plasma power is 340W, and oxygen flow is
2.6sccm；(6) underlayer temperature is heated up to 450 DEG C, 320 DEG C of the temperature of Zn evaporation sources, oxygen plasma is kept, in the substrate
Upper growth ZnO buffer, buffer layer thickness~10nm；(7) underlayer temperature is risen to 650 DEG C, keeps Zn source temperatures and oxygen etc.
Gas ions, the thick ZnO epitaxial films of 400nm are made.
2. utilize the Ge of SRIM programs simulation different-energy+The perpendicular projection shadow of incident ion after injection ZnO monocrystal thin films
Journey and perpendicular projection shadow journey statistic bias, design multiple stacking ion implanting conditions are as follows：400KeV, 1 × 1015cm-2+
200KeV, 3 × 1014cm-2+ 100KeV, 2 × 1014cm-2+ 30KeV, 1 × 1014cm-2.Under the superposition injection condition, Ge+From
Son distribution from film surface to nearly 120nm in be closely to be uniformly distributed, total doping concentration is about 7 × 1019cm-3(referring to Fig. 3).
3. carry out ion implanting experiment：Single electric charge Ge is obtained using magnetic analyzer+, reach after accelerated on injection target, note
7 degree will be tilted along crystallographic direction by entering direction；The injection ion of different-energy, four superposition injections can be obtained by changing accelerating potential
Experiment is as follows：Ion accelerating voltage 400kV, implantation dosage 1 × 1015cm-2；Ion accelerating voltage is reduced to 200KV, injectant
Amount 3 × 1014cm-2；Ion accelerating voltage is reduced to 100KV, implantation dosage 2 × 1014cm-2；Ion accelerating voltage is reduced to
30KV, implantation dosage 1 × 1014cm-2。
4.XRD tests show except substrate Al2O3(0006) outside diffraction maximum, ZnO (0002) and (0004) peak position are only existed,
The peak type at the two peaks is sharp keen, high degree of symmetry, and ZnO film remains in that good crystalline quality and monocrystalline after showing ion implanting
Characteristic (referring to Fig. 4).SQUID test results show that film has obvious room-temperature ferromagnetic, and its saturation magnetization is in 300K
When be 10.9emu/cm3(referring to Fig. 5).
Claims (10)
1. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction, comprise the following steps：
(1) there is certain ENERGY E using the simulation of SRIM programs1Ion incidence to energy loss of the ion after ZnO in target and
Distribution, obtains the perpendicular projection shadow journey R of incident ionp1With perpendicular projection shadow journey statistic bias Δ Rp1；
(2) energy is E1, dosage φ1Ion along random direction inject ZnO film after injection ion distribution be theoretically
Gaussian Profile：
X is depth of the ion from surface；
(3) repeat step (1), (2), a series of ENERGY E is designedi, dosage φiSo that total ion concentration is distributed as often after superposition
Number, i.e. N (x)=N1(x)+N2(x)+N3(x)+... it is approximately constant；
(4) according to the injection condition that sets, be implanted sequentially in ZnO monocrystal thin films different-energy, various dose doping from
Son.
2. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by：The ZnO monocrystal thin films use molecular beam epitaxy (MBE) technology or MOCVD
(MOCVD) prepared by method, and substrate is sapphire, silicon or gallium nitride.
3. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by：The injection ion of selection is non magnetic ion.
4. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by：Ion distribution depth x is less than film thickness, that is, injects ion and be fully distributed in ZnO film, the characteristic of material is complete
It is all the attribute of ZnO film material in itself.
5. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by, injection ion is single charge ion.
6. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by, injection ion energy is 20KeV~400KeV.
7. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by, ion implantation dosage is 1 × 1013cm-2~1 × 1015cm-2。
8. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, its
It is characterised by, in ion implanting experiment, implant angle is in 7 ° with the ZnO monocrystal thin films material surface normal, to avoid ion
Channelling effect during injection.
9. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1, more
In secondary superposition injection experimentses, high-energy, the ion of far firing range are first injected, reinjects the near ion of low energy, range.
10. a kind of room-temperature ferromagnetic ZnO monocrystal thin films preparation methods of ion implanting defect induction as claimed in claim 1,
Characterized in that, ion concentration is closely uniformly distributed in the range of certain film thickness after multiple stacking injection, total ion concentration exists
1018-1020/cm3Magnitude.
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| CN109727850A (en) * | 2018-12-20 | 2019-05-07 | 中国科学院上海微系统与信息技术研究所 | A method of aimed thin film longitudinal direction Uniform Doped is realized using ion implanting |
| CN110634639A (en) * | 2019-08-28 | 2019-12-31 | 松山湖材料实验室 | Method for regulating magnetic property of diluted magnetic semiconductor and its product |
| CN115691721A (en) * | 2022-12-29 | 2023-02-03 | 苏州培风图南半导体有限公司 | Channel ion distribution determination method and device based on ion implantation |
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| CN109727850A (en) * | 2018-12-20 | 2019-05-07 | 中国科学院上海微系统与信息技术研究所 | A method of aimed thin film longitudinal direction Uniform Doped is realized using ion implanting |
| CN109727850B (en) * | 2018-12-20 | 2020-12-08 | 中国科学院上海微系统与信息技术研究所 | Method for realizing longitudinal uniform doping of target film by utilizing ion implantation |
| CN110634639A (en) * | 2019-08-28 | 2019-12-31 | 松山湖材料实验室 | Method for regulating magnetic property of diluted magnetic semiconductor and its product |
| CN115691721A (en) * | 2022-12-29 | 2023-02-03 | 苏州培风图南半导体有限公司 | Channel ion distribution determination method and device based on ion implantation |
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