CN115682905A - Method and device for determining thickness of thin film and computer equipment - Google Patents
Method and device for determining thickness of thin film and computer equipment Download PDFInfo
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/30—Computing systems specially adapted for manufacturing
Abstract
The application relates to a thin film thickness determination method, a thin film thickness determination device, a computer device and a storage medium. The film thickness determining method comprises the following steps: acquiring thin film material information of a chip to be detected; determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value; according to the resistivity information, the film thickness of the chip to be detected is determined, and through the arrangement, the complex manual calculation work can be omitted, the calculation speed of the film thickness is increased, and the calculation accuracy of the film thickness is improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor measurement technologies, and in particular, to a method and an apparatus for determining a film thickness, a computer device, and a storage medium.
Background
In the semiconductor integrated circuit manufacturing process, it is often necessary to measure the thickness of the thin film, and the current methods for measuring the thin film mainly include the following methods: direct measurement: the method comprises the following steps of (1) carrying out section sample preparation on a thin film, and slicing and amplifying the section through an electron microscope to directly read the thickness of the thin film, but the measuring method has the defects of large measuring error and random measuring result; optical measurement: the film thickness is calculated by using the optical principles such as an ellipsometer and the like through a complex optical path and a formula, but the optical path design and the result derivation process of the measuring method are complex; and (3) conversion of component measurement: the characteristic X-ray of atoms in the film is measured by an X-ray fluorescence spectrometer and converted into the film thickness by calculating the number of atoms, but the measurement method needs to be calibrated by other measurement methods such as an atomic microscope.
In summary, the common method for measuring the thin film has large error of the measurement result, few reference factors and inaccurate thickness of the actually obtained thin film.
Disclosure of Invention
In view of the above, it is necessary to provide a film thickness determining method, apparatus, computer device and storage medium capable of accurately measuring the film thickness.
In a first aspect, the present application provides a method for determining a film thickness, comprising:
acquiring thin film material information of a chip to be detected;
determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value;
and determining the film thickness of the chip to be detected according to the resistivity information.
In one embodiment, before determining the resistivity information corresponding to the chip to be detected, the method further includes:
and collecting the resistivity value corresponding to each temperature value of the multiple thin film materials in a preset temperature range to form the resistivity database.
In one embodiment, the resistivity information includes a resistivity value and a measured resistance value;
the determining the resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database comprises the following steps:
acquiring a measurement resistance value of the chip to be detected;
matching a corresponding resistivity value of the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information;
determining the film thickness of the chip to be detected according to the resistivity information, wherein the determining comprises the following steps:
and determining the thickness of the film according to the measured resistance value and the resistivity value.
In one embodiment, the determining the film thickness of the chip to be detected according to the resistivity information includes:
and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
In one embodiment, the method further comprises:
adding the thin film material information, real-time temperature information, and the supplemental resistivity value to the resistivity database.
In one embodiment, the determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database further includes:
and sending an alarm when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range.
In a second aspect, the present application also provides a film thickness determining apparatus comprising:
the acquisition module is used for acquiring the thin film material information of the chip to be detected;
the first determining module is used for determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value;
and the second determining module is used for determining the film thickness of the chip to be detected according to the resistivity information.
In a third aspect, the present application also provides a computer device. The computer device comprises a memory and a processor, wherein the memory stores a computer program, and the processor realizes the film thickness determining method of any one of the above embodiments when executing the computer program.
In a fourth aspect, the present application further provides a computer-readable storage medium. The computer-readable storage medium, on which a computer program is stored, which, when executed by a processor, implements the film thickness determination method of any of the above embodiments.
According to the film thickness determining method, the film thickness determining device, the computer equipment and the storage medium, the corresponding resistivity value can be matched from the corresponding relation among the film material, the temperature value and the resistivity value contained in the resistivity database according to the film material information and the real-time temperature information of the chip to be detected, the resistivity information is determined according to the resistivity value, and then the film thickness of the chip to be detected is automatically calculated according to the resistivity information, so that the complex manual calculation work is omitted, the calculation speed of the film thickness is increased, and the calculation accuracy of the film thickness is improved.
Drawings
FIG. 1 is a diagram of an exemplary thin film thickness determination method;
FIG. 2 is a schematic flow chart of a method for determining film thickness according to one embodiment;
FIG. 3 is a schematic flow chart of a method for determining film thickness according to one embodiment;
FIG. 4 is a schematic flow chart illustrating the determination of resistivity information in a method for determining film thickness according to one embodiment;
FIG. 5 is a block diagram showing the structure of a thin film thickness determining apparatus according to an embodiment;
FIG. 6 is a block diagram showing the structure of a thin film thickness determining apparatus according to an embodiment;
FIG. 7 is a block diagram showing the configuration of a first determination module in the film thickness determination apparatus according to one embodiment;
FIG. 8 is a diagram illustrating an internal structure of a computer device according to an embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The method for determining the thickness of the thin film provided by the embodiment of the application can be applied to the application environment shown in fig. 1.
For example, the film thickness determination method is applied to the terminal 102, and the terminal 102 acquires the film material information of the chip to be detected through the human-computer interaction interface; then the terminal 102 determines the resistivity information corresponding to the chip to be detected according to the film material information, the real-time temperature information and a preset resistivity database stored by the server 104; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value; and the terminal 102 determines the film thickness of the chip to be detected according to the resistivity information. The terminal 102 may be, but is not limited to, various personal computers, notebook computers, smart phones, tablet computers, internet of things devices, and portable wearable devices. The server 104 may be implemented as a stand-alone server or as a server cluster comprised of multiple servers. The terminal 102 and the server 104 may be connected directly or indirectly through wired or wireless communication, such as through a network connection.
For another example, the film thickness determining method is applied to the server 104, the terminal 102 obtains the film material information of the chip to be detected through the human-computer interaction interface, then the terminal 102 sends the film material information to the server 104, and the server 104 determines the resistivity information corresponding to the chip to be detected according to the film material information, the real-time temperature information and a stored preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value; and the server 104 determines the film thickness of the chip to be detected according to the resistivity information. It will be appreciated that the data storage system may be a stand-alone storage device, or the data storage system may be located on a server, or the data storage system may be located on another terminal.
In one embodiment, a method for determining a film thickness is provided, and the embodiment is exemplified by the method for determining a film thickness being applied to a processor, and it is understood that the processor may be located on a terminal or a server. As shown in fig. 2, the film thickness determining method includes:
The chip to be detected is referred to as a semiconductor chip.
The thin film material information refers to a material composition of a conductive film on a semiconductor chip, and the conductive film of the semiconductor chip includes an epitaxial film, a polycrystalline silicon thin film, an ion implantation film, a metal film, and the like.
The processor can pre-store the one-to-one corresponding relation between the chip information and the film material information of the semiconductor chip, and the processor matches the corresponding film material information from the one-to-one corresponding relation between the chip information and the film material information of the conductor chip according to the chip information of the chip to be detected to serve as the film material information of the chip to be detected. The chip information may be a chip name, a chip model number, etc.
As an example, the processor may match corresponding thin film material information from a one-to-one correspondence relationship between the chip information of the conductor chip and the thin film material information as the thin film material information of the chip to be detected, according to an instruction issued by a user through the terminal.
The processor can also take the film material information input by the user through the human-computer interaction interface of the terminal as the film material information of the chip to be detected.
In this embodiment, the processor obtains the material composition of the conductive film of the chip to be detected after receiving an instruction sent by a user through the terminal.
204, determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value.
Real-time temperature information refers to the temperature at which the resistivity information is determined. The real-time temperature information may be set by a user through a human-computer interaction interface of the terminal, or may be acquired by the sensor in real time, and the time when the sensor acquires the real-time temperature information may be, for example, when the processor receives an instruction sent by the user through the terminal.
The resistivity database records the relationship among the thin film material, the temperature value and the resistivity value, and the resistivity value recorded in the resistivity database reflects the actual resistivity value of the conductive film under the influence of the material composition and the temperature.
The resistivity information refers to resistivity related information of a conductive film of a chip to be detected.
In this embodiment, the processor determines the resistance related information of the conductive film of the chip to be detected according to the material composition of the conductive film of the chip to be detected, the real-time temperature information when the processor receives an instruction sent by a user through the terminal, and the corresponding relationship among the thin film material, the temperature value, and the resistivity value included in the resistivity database.
And step 206, determining the film thickness of the chip to be detected according to the resistivity information.
According to the film thickness determining method, the processor can match the corresponding resistivity value from the corresponding relation among the film material, the temperature value and the resistivity value contained in the resistivity database according to the film material information and the real-time temperature information of the chip to be detected, determine the resistivity information according to the resistivity value, and then automatically calculate the film thickness of the chip to be detected according to the resistivity information, so that the complex manual calculation work is omitted, the calculation speed of the film thickness is increased, and the calculation accuracy of the film thickness is improved.
As shown in fig. 3, in some optional embodiments, before step 204, further comprising: step 201, collecting resistivity values corresponding to each temperature value of a plurality of thin film materials in a preset temperature range to form a resistivity database.
The thin film material refers to a material of a conductive film on a semiconductor chip.
The preset temperature range may be set according to an operating environment temperature of the machine for measuring the film resistance, for example, when the environmental temperature of the machine is greater than 25 ℃ or less than 20 ℃, normal operation of the machine is affected due to abnormal temperature, and the processor may set the preset temperature range to [20 ℃,25 ℃).
In this embodiment, the processor integrates the temperature of the material of the conductive film applied under the mature technology of the semiconductor industry at 20 ℃ to 25 ℃ and the corresponding resistivity value to obtain a mapping relation table of the thin film material, the temperature value and the resistivity value as a resistivity database.
As shown in fig. 4, in some alternative embodiments, the resistivity information includes a resistivity value and a measured resistance value; step 204 comprises: 2041, obtaining a measurement resistance value of a chip to be detected; 2042, matching the resistivity value corresponding to the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information; step 206 comprises: and determining the thickness of the film according to the measured resistance value and the resistivity value.
The measured resistance value refers to a resistivity value obtained by measuring the sheet resistance square resistance by adopting a four-probe technology.
In the method for determining the thickness of the thin film in the embodiment, the measured resistance value and the resistivity value determined according to the real-time temperature information in the resistivity database are considered in a combined manner, and the influence caused by the temperature change is taken into account, so that the thickness of the thin film obtained through final calculation is more accurate.
In some alternative embodiments, step 206 includes: and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
As an example, the resistivity database stores a resistivity value corresponding to each temperature value of the material a within a temperature range of 20 ℃ to 25 ℃, when the thin film material information corresponds to the material a and the real-time temperature information corresponds to 19 ℃, the resistivity value corresponding to the temperature value of the material a at 19 ℃ does not exist in the resistivity database, so that the processor cannot match the resistivity value corresponding to the chip to be detected from the resistivity database, or when the thin film material information corresponds to the material B, the resistivity value corresponding to any temperature value of the material B does not exist in the resistivity database, so that the processor cannot match the resistivity value corresponding to the chip to be detected from the resistivity database.
The processor can send a prompt through a human-computer interaction interface of the terminal when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the thin film material information and the real-time temperature information, a user can select whether to manually input a supplementary resistivity value according to the prompt, if the user does not input the supplementary resistivity value, the processor adopts a four-probe technology measurement mode (RS measurement mode), and at the moment, the processor can only output a measured resistance value; and if the user inputs the supplementary resistivity value, the processor adopts a film thickness measuring mode, and at the moment, the processor replaces the resistivity value matched from the resistivity database with the supplementary resistivity value input by the user and further determines the film thickness of the chip to be detected. For another example, if the processor sends a prompt through the human-computer interface of the terminal and does not receive the selection made by the user through the human-computer interface within the preset time, the processor automatically selects the RS measurement mode to output the measured resistance value.
As an example, in the RS measurement mode, the processor directly outputs the measured resistance value, and at this time, the processor can only output the measured resistance value.
As an example, in the film thickness measurement mode, the following formula is adopted to determine the film thickness of the chip to be detected according to the complementary resistivity value and the measurement resistance value:
Y=(S1/S2)*[A+BX^(-1)]
S1/S2 represents a correction coefficient and is 1 by default; a represents offset, which is used for compensating the difference caused by actual measurement and is default to 0; b represents the supplementary resistivity value, and X represents the measured resistance value.
In this embodiment, the processor may directly output the measured resistance value when the resistivity value corresponding to the thin film material information and the real-time temperature information does not exist in the resistivity database, or calculate the thickness of the thin film according to the supplementary resistivity value and the measured resistance value input by the user, so as to prevent the automatic calculation process of the thickness of the thin film from being unable to continue due to data loss in the resistivity database.
In some optional embodiments, the film thickness determining method further comprises: the thin film material information, the real-time temperature information, and the supplemental resistivity values are added to a resistivity database.
In this embodiment, when the thin film material information and the real-time temperature information of the chip to be detected do not exist in the resistivity database, and the user inputs the supplementary resistivity value through the human-computer interface of the terminal, the processor may automatically store the corresponding relationship among the thin film material information, the real-time temperature information, and the supplementary resistivity value of the chip to be detected in the resistivity database, so as to update the resistivity database.
In some optional embodiments, step 204 further comprises: and when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range, giving an alarm.
As an example, when the preset temperature range is [20 ℃,25 ℃), and the real-time temperature value represented by the real-time temperature information is 19 ℃, the processor may send an alarm through the human-computer interaction interface of the terminal to prompt the worker that the current environment temperature is abnormal.
When the real-time temperature value represented by the real-time temperature information exceeds the preset temperature range, the processor can send out high-temperature early warning, and the working personnel can cool the machine table according to the warning. When the real-time temperature value that real-time temperature information shows is less than predetermineeing temperature range, the treater can send out low temperature early warning, and the staff can heat the board according to reporting an emergency and asking for help or increased vigilance.
It should be noted that the manner of sending the alarm may include signal lamp alarm, sound alarm, text alarm, buzzer alarm, etc., and the setting is intended to prompt the worker through the terminal that the ambient temperature is abnormal.
In this embodiment, the processor may determine whether the current ambient temperature of the machine station meets a predetermined temperature range according to the ambient temperature actually acquired by the sensor, and cool or heat the machine station when the ambient temperature is too high or too low, so as to ensure that the ambient temperature does not affect the calculation result when calculating the film thickness, and the calculation result of the film thickness is more accurate.
According to the method for determining the film thickness, the corresponding resistivity value can be matched from the resistivity database according to the manufacturing material and the real-time temperature value of the chip to be detected, the film thickness is calculated by combining the measured resistance value obtained by actual measurement in the RS measuring process, and when the resistivity value corresponding to the manufacturing material and the real-time temperature value of the chip to be detected does not exist in the resistivity database, the measured resistance value can be directly output, or the supplementary resistivity value input by a user is adopted to replace the resistivity value matched from the resistivity database, and the film thickness is calculated according to the supplementary resistivity value and the measured resistance value. Through the setting, the influence of the temperature on the resistivity value is taken into consideration, so that the finally calculated film thickness is more accurate, the film thickness can still be automatically calculated when data stored in the resistivity database is missing, the full automation of the calculation process is ensured, the processor can automatically supplement and update the resistivity database according to the supplementary resistivity value input by a user, and the later film thickness calculation process can be more accurate.
It should be understood that, although the steps in the flowcharts related to the embodiments as described above are sequentially displayed as indicated by arrows, the steps are not necessarily performed sequentially as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a part of the steps in the flowcharts related to the embodiments described above may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the execution order of the steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least a part of the steps or stages in other steps.
Based on the same inventive concept, the embodiment of the present application further provides a film thickness determining apparatus for implementing the above-mentioned film thickness determining method. The solution to the problem provided by the apparatus is similar to the solution described in the above method, so the specific limitations in one or more embodiments of the film thickness determination apparatus provided below can be referred to the limitations of the above film thickness determination method, and are not described herein again.
In one embodiment, as shown in fig. 5, there is provided a film thickness determining apparatus 500 including: an acquisition module 502, a first determination module 504, and a second determination module 506, wherein:
the obtaining module 502 is used for obtaining the thin film material information of the chip to be detected;
the first determining module 504 is configured to determine resistivity information corresponding to a chip to be detected according to the thin film material information, the real-time temperature information, and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value;
the second determining module 506 is configured to determine a film thickness of the chip to be detected according to the resistivity information.
As shown in fig. 6, in some alternative embodiments, the film thickness determining apparatus 500 further includes: the acquisition module 501 acquires a resistivity value corresponding to each temperature value of a plurality of thin film materials within a preset temperature range to form a resistivity database.
As shown in fig. 7, in some alternative embodiments, the resistivity information includes a resistivity value and a measured resistance value; the first determination module 504 includes: the obtaining unit 5042 is configured to obtain a measured resistance value of the chip to be detected; the matching unit 5044 is used for matching the resistivity value corresponding to the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information; the second determination module 506 is further configured to: and determining the thickness of the film according to the measured resistance value and the resistivity value.
In some optional embodiments, the second determination module 506 is further configured to: and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
In some optional embodiments, the second determination module 506 is further configured to: the thin film material information, the real-time temperature information, and the supplemental resistivity values are added to a resistivity database.
In some optional embodiments, the first determination module 504 is further configured to: and when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range, giving an alarm.
The respective modules in the above-described film thickness determining apparatus may be entirely or partially implemented by software, hardware, and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules.
In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as shown in fig. 8. The computer apparatus includes a processor, a memory, an input/output interface, a communication interface, a display unit, and an input device. The processor, the memory and the input/output interface are connected by a system bus, and the communication interface, the display unit and the input device are connected by the input/output interface to the system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of an operating system and computer programs in the non-volatile storage medium. The input/output interface of the computer device is used for exchanging information between the processor and an external device. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless communication can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a method of film thickness determination. The display unit of the computer device is used for forming a visual visible picture, and can be a display screen, a projection device or a virtual reality imaging device. The display screen can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, a key, a track ball or a touch pad arranged on a shell of the computer equipment, an external keyboard, a touch pad or a mouse and the like.
Those skilled in the art will appreciate that the architecture shown in fig. 8 is merely a block diagram of some of the structures associated with the disclosed aspects and is not intended to limit the computing devices to which the disclosed aspects apply, as particular computing devices may include more or less components than those shown, or may combine certain components, or have a different arrangement of components.
In one embodiment, a computer-readable storage medium is provided, having a computer program stored thereon, which when executed by a processor, performs the steps of: acquiring thin film material information of a chip to be detected; determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value; and determining the film thickness of the chip to be detected according to the resistivity information.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and collecting the resistivity value corresponding to each temperature value of the multiple thin film materials in a preset temperature range to form a resistivity database.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: the resistivity information comprises a resistivity value and a measured resistance value; determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database, wherein the determining comprises the following steps: acquiring a measured resistance value of a chip to be detected; matching a resistivity value corresponding to the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information; determining the film thickness of the chip to be detected according to the resistivity information, comprising the following steps: and determining the thickness of the film according to the measured resistance value and the resistivity value.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: the thin film material information, the real-time temperature information, and the supplemental resistivity values are added to a resistivity database.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range, giving an alarm.
In one embodiment, a computer program product is provided, comprising a computer program which when executed by a processor performs the steps of: acquiring thin film material information of a chip to be detected; determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value; and determining the film thickness of the chip to be detected according to the resistivity information.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and collecting the resistivity values corresponding to each temperature value of the multiple thin film materials in a preset temperature range to form a resistivity database.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: the resistivity information comprises a resistivity value and a measured resistance value; determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database, wherein the determining comprises the following steps: acquiring a measured resistance value of a chip to be detected; matching a resistivity value corresponding to the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information; determining the film thickness of the chip to be detected according to the resistivity information, comprising the following steps: and determining the thickness of the film according to the measured resistance value and the resistivity value.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: the thin film material information, the real-time temperature information, and the supplemental resistivity values are added to a resistivity database.
In some alternative embodiments, the computer program when executed by the processor further performs the steps of: and when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range, giving an alarm.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high-density embedded nonvolatile Memory, resistive Random Access Memory (ReRAM), magnetic Random Access Memory (MRAM), ferroelectric Random Access Memory (FRAM), phase Change Memory (PCM), graphene Memory, and the like. Volatile Memory can include Random Access Memory (RAM), external cache Memory, and the like. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), for example. The databases referred to in various embodiments provided herein may include at least one of relational and non-relational databases. The non-relational database may include, but is not limited to, a block chain based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing based data processing logic devices, etc., without limitation.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.
Claims (9)
1. A method for determining a film thickness, comprising:
acquiring thin film material information of a chip to be detected;
determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value;
and determining the film thickness of the chip to be detected according to the resistivity information.
2. The method according to claim 1, wherein before determining the resistivity information corresponding to the chip to be detected, the method further comprises:
and collecting the resistivity value corresponding to each temperature value of the multiple thin film materials in a preset temperature range to form the resistivity database.
3. The method of claim 2, wherein the resistivity information includes a resistivity value and a measured resistance value;
the determining the resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database comprises the following steps:
obtaining a measured resistance value of the chip to be detected;
matching a corresponding resistivity value of the chip to be detected from the resistivity database according to the thin film material information and the real-time temperature information;
determining the film thickness of the chip to be detected according to the resistivity information, wherein the determining comprises the following steps:
and determining the thickness of the film according to the measured resistance value and the resistivity value.
4. The method according to claim 3, wherein the determining the film thickness of the chip to be detected according to the resistivity information comprises:
and when the corresponding resistivity value of the chip to be detected cannot be matched from the resistivity database according to the film material information and the real-time temperature information, determining the film thickness of the chip to be detected according to the received supplementary resistivity value and the measured resistance value.
5. The method of claim 4, further comprising:
adding the thin film material information, real-time temperature information, and the supplemental resistivity value to the resistivity database.
6. The method according to claim 2, wherein the determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database further comprises:
and sending an alarm when the real-time temperature value represented by the real-time temperature information is determined not to conform to the preset temperature range.
7. A film thickness determining apparatus, comprising:
the acquisition module is used for acquiring the thin film material information of the chip to be detected;
the first determining module is used for determining resistivity information corresponding to the chip to be detected according to the thin film material information, the real-time temperature information and a preset resistivity database; the resistivity database records the relationship among the thin film material, the temperature value and the resistivity value;
and the second determining module is used for determining the film thickness of the chip to be detected according to the resistivity information.
8. A computer device comprising a memory and a processor, the memory storing a computer program, wherein the processor implements the steps of the film thickness determination method of any one of claims 1 to 6 when executing the computer program.
9. A computer-readable storage medium, on which a computer program is stored, which computer program, when being executed by a processor, carries out the steps of the method for determining a film thickness according to any one of claims 1 to 6.
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