CN115659891B

CN115659891B - Optimization method of resonant network and electronic equipment

Info

Publication number: CN115659891B
Application number: CN202211473551.0A
Authority: CN
Inventors: 张子炎
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2022-11-23
Filing date: 2022-11-23
Publication date: 2023-05-16
Anticipated expiration: 2042-11-23
Also published as: CN115659891A

Abstract

The embodiment of the application provides an optimization method of a resonance network and electronic equipment, which relate to the field of radio frequency, and can increase the roll-off coefficient of the resonance network with lower cost and improve the performance of the resonance network. The method comprises the following steps: and determining a resonance network according to the target passband and the target stopband. The operating point of the resonant network at the target passband is closer to the matching point of the smith chart than the operating point at the target stopband. And determining a first parameter of the resonant network at a first frequency point. The first frequency point is the frequency point closest to the target passband in the target stopband, and the first parameter at least comprises one of the following: reflection coefficient, impedance, admittance, insertion loss, S parameter. The first circuit is determined based on the first parameter. The first circuit is configured to pull the operating point of the resonant network at the first frequency point to an open or short circuit point of the smith chart and to pull the operating point of the resonant network at the target passband to a matching point of the smith chart. The first circuit is connected to a resonant network.

Description

Optimization method of resonant network and electronic equipment

Technical Field

The embodiment of the application relates to the field of radio frequency, in particular to a method for optimizing a resonant network and electronic equipment.

Background

The resonant network is a single-port network comprising an inductive element, a capacitive element and a resistive element, and has the characteristic of allowing signals of a certain frequency band to pass and preventing signals of other frequency bands from passing. The frequency band that it allows to pass may be generally referred to as a pass band and the frequency band that it blocks from passing may be referred to as a stop band. In practical application, the characteristics of pass band and stop band of the resonant network can be utilized to realize the filtering, combining, frequency selection and the like of the radio frequency signals.

However, many resonant networks are designed using elements with low Q values (quality factors) for cost or technical reasons, resulting in a transition between their pass and stop bands. The signal of the transition zone is attenuated by the resonant network but is not isolated, resulting in poor filtering performance of the resonant network. In the radio frequency domain, the steepness of the transition zone can be described by the roll-off coefficient. The larger the roll-off coefficient, the steeper the transition zone, and the better the performance of the corresponding resonant network. Conversely, a smaller roll-off coefficient indicates that the flatter the transition zone, the poorer the performance of the corresponding resonant network.

Therefore, how to optimize the resonant network to increase the roll-off coefficient thereof is a problem to be solved.

Disclosure of Invention

The embodiment of the application provides an optimization method of a resonance network and electronic equipment, which can increase the roll-off coefficient of the resonance network with lower cost and improve the filtering performance of the resonance network.

In order to achieve the above purpose, the following technical solutions are adopted in the embodiments of the present application.

In a first aspect, a method for optimizing a resonant network is provided, the method comprising: and determining a resonance network according to the target passband and the target stopband. The operating point of the resonant network at the target passband is closer to the matching point of the smith chart than the operating point at the target stopband. And determining a first parameter of the resonant network at a first frequency point. The first frequency point is the frequency point closest to the target passband in the target stopband, and the first parameter at least comprises one of the following: reflection coefficient, impedance, admittance, insertion loss, S parameter. The first circuit is determined based on the first parameter. The first circuit is configured to pull the operating point of the resonant network at the first frequency point to an open or short circuit point of the smith chart and to pull the operating point of the resonant network at the target passband to a matching point of the smith chart. The first circuit is connected to a resonant network.

Based on the scheme, the first circuit is determined by referring to the smith chart, the resonance network is optimized through the first circuit, and the optimized resonance network is arranged in the radio frequency channel, so that the radio frequency channel can work at the open circuit point of the smith chart at the first frequency point. It can be seen that the method does not need a complex process or a high-Q element, so that the optimized resonant network has a larger roll-off coefficient at a lower cost, and the performance of the resonant network is improved.

In one possible design, determining the first circuit based on the first parameter includes: and determining an equivalent circuit of the resonant network according to the first parameter. The second parameter of the equivalent circuit at the first frequency point is satisfied, and the absolute value of the difference between the second parameter and the corresponding parameter of the first parameter is smaller than a preset threshold. The second parameter includes at least one of: reflection coefficient, impedance, admittance, insertion loss, S parameter. And determining the first circuit according to the first frequency point and the equivalent circuit. The first circuit is used for pulling the working point of the equivalent circuit at the first frequency point to the open circuit point or the short circuit point of the smith chart. Based on the scheme, the first circuit which pulls the working point of the equivalent circuit at the first frequency point to the open circuit point or the short circuit point of the smith chart can be conveniently determined.

In one possible design, determining the first circuit from the first frequency point and the equivalent circuit includes: when the equivalent circuit is connected in series with the radio frequency channel, a first circuit and a second connection mode required for pulling the working point of the equivalent circuit at the first frequency point to the open point of the smith chart are determined in the smith chart according to the open point and the first frequency point. The second connection means includes series and parallel connections. Based on the scheme, when the equivalent circuit is connected in series with the radio frequency channel, if the equivalent circuit works at the open-circuit point of the smith chart at a certain frequency, the radio frequency channel also works at the open-circuit point of the smith chart at the certain frequency, and the radio frequency channel can be equivalent to an open circuit at a first frequency point when the resonant network is connected in series with the radio frequency channel. In this way, the roll-off coefficient of the resonant network between the target pass band and the target stop band can be increased.

In one possible design, determining the first circuit from the first frequency point and the equivalent circuit includes: when one end of the equivalent circuit is connected with the radio frequency channel and the other end is grounded, a first circuit and a second connection mode required for pulling the working point of the equivalent circuit at the first frequency point to the short circuit point of the smith chart are determined in the smith chart according to the short circuit point and the first frequency point. The second connection means includes series and parallel connections. Based on the scheme, when one end of the equivalent circuit is connected with the radio frequency channel and the other end is grounded, if the equivalent circuit works at a short-circuit point of the smith chart at a certain frequency, the radio frequency channel is short-circuited by the equivalent circuit at the frequency and works at an open-circuit point of the smith chart as well as is equivalent to open-circuit. One end of the resonant network is connected with the radio frequency channel, and the other end of the resonant network is grounded, so that the radio frequency channel is equivalent to open circuit at a first frequency point. In this way, the roll-off coefficient of the resonant network between the target pass band and the target stop band can be increased.

In one possible design, connecting the first circuit with the resonant network includes: the first circuit is connected to the resonant network in a second connection. Based on the scheme, whether the resonant network is connected with the radio frequency channel in series or one end is connected with the radio frequency channel, the other end is grounded, and the radio frequency channel has a larger roll-off coefficient after being connected with the first circuit in a second connection mode, so that the radio frequency channel is equivalent to an open circuit in a stop band, and the performance of the radio frequency channel is improved.

In one possible design, the resonant network is connected with the radio frequency path in a first connection. The first connection mode is serial connection or one end is connected with the radio frequency path, and the other end is grounded. The insertion loss of the resonant network in the target stop band is different from the insertion loss of the resonant network in the target pass band, specifically: when the first connection mode is series connection, the insertion loss of the resonant network in the target stop band is larger than the insertion loss in the target pass band. The first connection mode is that one end is connected with the radio frequency channel, and when the other end is grounded, the insertion loss of the resonant network in the target stop band is smaller than the insertion loss in the target pass band. Based on this scheme, the stopband and passband can be pulled apart in the smith chart.

In one possible design, the first parameter and the second parameter are both reflection coefficients. The preset threshold comprises a first preset threshold. Determining an equivalent circuit of the resonant network based on the first parameter, comprising: and determining an equivalent capacitance or an equivalent inductance corresponding to the reflection coefficient of the resonant network at the first frequency point in the Smith chart as an equivalent circuit. The absolute value of the difference between the reflection coefficient of the equivalent circuit at the first frequency point and the reflection coefficient of the resonant network at the first frequency point is smaller than a first preset threshold value. Based on the scheme, the type and the parameters of the equivalent circuit can be conveniently and accurately determined according to the reflection coefficient.

In one possible design, the first parameter and the second parameter are both impedances. The preset threshold comprises a second preset threshold. Determining an equivalent circuit of the resonant network based on the first parameter, comprising: and determining an equivalent capacitance or an equivalent inductance corresponding to the impedance of the resonant network at the first frequency point in the smith chart as an equivalent circuit. The absolute value of the difference between the impedance of the equivalent circuit at the first frequency point and the impedance of the resonant network at the first frequency point is smaller than a second preset threshold value. Based on the scheme, the type and the parameters of the equivalent circuit can be conveniently and accurately determined according to the impedance.

In one possible design, the first parameter is the reflectance. Determining a first parameter of the resonant network at a first frequency point, comprising: and simulating the resonant network to determine the reflection coefficient of the resonant network at the first frequency point. Based on the scheme, the reflection coefficient of the resonant network at the first frequency point can be conveniently determined.

In one possible design, the first parameter is impedance. Determining a first parameter of the resonant network at a first frequency point, comprising: and calculating the impedance of the resonant network at the first frequency point according to the capacitance value of the capacitive element in the resonant network, the inductance value of the inductive element and the resistance value of the resistive element. Based on the scheme, the reflection coefficient of the resonant network at the first frequency point can be accurately calculated.

In one possible design, the equivalent circuit is a capacitive element or an inductive element.

In one possible design, the frequency point in the target passband closest to the target stopband is the second frequency point. The absolute value of the difference between the first frequency point and the second frequency point is smaller than a third preset threshold value. Based on the scheme, for a resonant network with a passband relatively close to a stopband, a high Q element with higher cost and a complex process are generally required in the industry to realize a lower roll-off coefficient. And the high Q element and the process are basically in monopoly state, and the use cost is very high. The requirement on the Q value of the element is low, any complex process is not needed, the roll-off coefficient of the resonant network can be increased at very low cost, and the application value is very high.

In a second aspect, an electronic device is provided that includes one or more processors and one or more memories. One or more memories are coupled to the one or more processors, the one or more memories storing computer instructions. The computer instructions, when executed by one or more processors, cause an electronic device to perform the method of optimizing a resonant network as in any of the first aspects.

In a third aspect, a system on a chip is provided, the chip comprising processing circuitry and an interface. The processing circuit is configured to call from the storage medium and execute a computer program stored in the storage medium to perform the method of optimizing the resonant network according to any one of the first aspects.

In a fourth aspect, there is provided a computer readable storage medium comprising computer instructions which, when executed, perform the method of optimizing a resonant network according to any one of the first aspects.

In a fifth aspect, a computer program product is provided, comprising instructions in the computer program product, which when run on a computer, causes the computer to perform the method of optimizing a resonant network according to the instructions as in any of the first aspects.

It should be appreciated that the technical features of the technical solutions provided in the second aspect, the third aspect, the fourth aspect and the fifth aspect may all correspond to the optimization method of the resonant network provided in the first aspect and the possible designs thereof, so that the beneficial effects can be achieved similarly, and are not repeated herein.

Drawings

FIG. 1 is a schematic diagram showing the relationship between the insertion loss and the frequency of an ideal resonant network;

FIG. 2 is a schematic diagram showing the relationship between the insertion loss and the frequency of a resonant network;

FIG. 3 is a schematic diagram showing the relationship between the insertion loss and the frequency of a combiner;

FIG. 4 is a schematic diagram showing a relationship between the insertion loss and the frequency of another combiner;

FIG. 5 is a schematic diagram of a simple Smith chart;

fig. 6 is a schematic diagram of a resonant network according to an embodiment of the present application;

fig. 7 is a schematic diagram of a relationship between insertion loss and frequency of a resonant network according to an embodiment of the present application;

fig. 8 is a flowchart of a method for optimizing a resonant network according to an embodiment of the present application;

fig. 9 is a schematic diagram of an equivalent circuit determined on a smith chart according to an embodiment of the present application;

FIG. 10 is a schematic diagram of yet another resonant network provided in an embodiment of the present application;

FIG. 11 is a schematic diagram of yet another resonant network provided in an embodiment of the present application;

fig. 12 is a schematic diagram of an optimized resonant network according to an embodiment of the present application;

fig. 13 is a schematic diagram of a relationship between insertion loss and frequency of another resonant network according to an embodiment of the present disclosure;

fig. 14 is a schematic diagram of operating points of an optimized resonant network in a smith chart according to an embodiment of the present application;

fig. 15 is a schematic diagram of a T-type resonant network according to an embodiment of the present application;

FIG. 16 is a schematic diagram of another optimized resonant network according to an embodiment of the present disclosure;

FIG. 17 is a schematic diagram of another optimized resonant network according to an embodiment of the present disclosure;

FIG. 18 is a schematic diagram of another optimized resonant network according to an embodiment of the present disclosure;

fig. 19 is a schematic diagram of the composition of an electronic device according to an embodiment of the present application;

fig. 20 is a schematic diagram of a system on chip according to an embodiment of the present application.

Detailed Description

The terms "first," "second," and "third," etc. in the embodiments of the present application are used for distinguishing between different objects and not for defining a particular order. Furthermore, the words "exemplary" or "such as" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete fashion.

In order to facilitate understanding of the embodiments of the present application, the following description first refers to the background of the embodiments of the present application.

An ideal resonant network should have a strict passband and stopband. For example, the signal in the passband is completely unattenuated through the ideal resonant network, the signal in the stopband is completely attenuated through the ideal resonant network, and the transition between passband and stopband is completed at a certain frequency point or within a certain minimum frequency range.

Fig. 1 is a schematic diagram showing a relationship between an insertion loss and a frequency of an ideal resonant network. The bold line in fig. 1 is a plot of the insertion loss versus frequency of the ideal resonant network. As shown in fig. 1, the passband of the ideal resonant network is fa to fb, and the other frequency bands except fa to fb are stopbands. It can be seen that the insertion loss of the ideal resonant network in the passband is basically 0, and the insertion loss in the stopband is larger. The switching of the pass band and the stop band is completed at the fa point and the fb point.

The resonant network shown in fig. 1 described above may be connected to the radio frequency path. There is no attenuation at all when signals in the pass band pass, and the signals in the stop band pass are attenuated completely. It is therefore easy to understand that an ideal resonant network has very good filtering, frequency-selecting, etc. capabilities.

The resonant network is typically composed of inductive elements, capacitive elements, resistive elements, etc. In practical applications, since the requirements and costs for manufacturing high Q devices are very high, devices with lower Q values are used in designing most resonant networks. In this way, a transition band exists between the pass band and the stop band of the resonant network.

Fig. 2 is a schematic diagram showing a relationship between an insertion loss and a frequency of a resonant network. The bold line in fig. 2 is a plot of the insertion loss versus the frequency of a resonant network in practical application. As shown in fig. 2, the ideal passband of the resonant network is fa to fb, and the ideal stopband is other frequency bands besides fa to fb.

However, due to the Q value of the element, the switching of the pass band and the stop band of the resonant network is not completed at the fa point or the fb point, but is switched from the stop band to the pass band through the transition band from fc to fa, and is switched from the pass band to the stop band through the transition band from fb to fd.

It will be readily appreciated that the resonant network described above with respect to fig. 2 is connected to the radio frequency path. The signals in the fa to fb bands are substantially not attenuated when passing through, signals smaller than fc or larger than fd are substantially completely attenuated when passing through, but there is some attenuation when the signals in the transition band pass through. That is, in addition to signals within the passband, a portion of the signal of the transition band may also pass through the resonant network. Therefore, the filtering, frequency selecting and other performances of the resonant network are poor.

It can also be seen from the above-mentioned fig. 2 that the wider the transition band, i.e. the flatter the transition band, the poorer the performance of the corresponding resonant network; the narrower the transition zone, i.e. the steeper the transition zone, the better the performance of the corresponding resonant network.

In the radio frequency domain, the transition zone steepness can be described by a roll-off coefficient, as will be explained below.

Take the resonant network corresponding to fig. 2 as an example. The ideal bandwidth of the resonant network is BW fb-fa, and the transition from fa to fc is the same as the transition from fb to fd, defining fd-fb=fa-fc=2fx. The nyquist bandwidth Fn of the resonant network can be obtained as BW/2+ fx, and the roll-off coefficient α is defined as fx/Fn.

It can be seen that the roll-off coefficient has a value in the range of 0 to 1. When fx is equal to Fn, there is no roll-off, and the roll-off coefficient is 1. That is, the smaller the roll-off coefficient, the flatter the transition zone, the poorer the performance of the corresponding resonant network; the larger the roll-off coefficient, the steeper the transition zone, and the better the performance of the corresponding resonant network.

The resonant networks corresponding to fig. 1 and 2 above may also be referred to as filters. In practical applications, the resonant network may be composed of a plurality of filters, forming a combiner, a trap, etc.

Fig. 3 is a schematic diagram showing a relationship between a plug loss and a frequency of a combiner. As shown in fig. 3, two filters may be included in the combiner. One of the filters has pass bands fg to fh and transition bands fe to fg and fh to fi. The pass band of the other filter is fk to fl, and the transition bands are fj to fk and fl to fm.

It can be seen that when fh to fi do not coincide with fj to fk (i.e. the situation shown in fig. 3), i.e. when two adjacent transition bands of the filters do not coincide, the insertion loss of the combiner in the band is low, and the combiner can basically work normally.

However, when fh to fi at least partially overlap fj to fk, that is, there is at least partial overlap between adjacent transition bands of two filters, as shown in fig. 4, the transition bands will pull the insertion loss in the passband high, that is, the insertion loss of the corresponding combiner in the passband will be increased.

In other words, when the roll-off coefficient of the filter is smaller and the frequency difference between the pass bands of different filters in the combiner is smaller, the insertion loss in the pass band of the combiner may be increased, which affects the normal operation of the combiner.

In order to increase the roll-off coefficient of the filter in the resonant network, the related art generally uses a low Q material, which is very expensive, and a very complex process to manufacture the filter, and the roll-off coefficient of the resonant network is increased by the material and the process. It is easy to understand that the scheme has larger cost requirement and larger process requirement, has poorer generality and cannot be suitable for most resonant networks.

Therefore, the embodiment of the application provides an optimization method of the resonant network, which can increase the roll-off coefficient of the resonant network with lower cost without complex process, thereby improving the performance of the resonant network.

For easy understanding, before explaining the method for optimizing the resonant network provided in the embodiment of the present application, a simple description will be given of a smith chart to be used in the method.

Please refer to fig. 5, which is a schematic diagram of a simple smith chart. As shown in fig. 5, the smith chart includes a resistive line, an impedance circle, and a reactance arc. Wherein the resistance line is the horizontal axis. The plurality of tangent circles are impedance circles. The left intersection point of the maximum impedance circle and the resistance wire is a short-circuit point, the right intersection point of the maximum impedance circle and the resistance wire is an open-circuit point, and the circle center is a matching point. The arc radiating from the open circuit point to the circumference is a reactive arc.

Each point in the smith chart represents a complex form of impedance value. The impedance refers to the blocking capacity of a circuit to points, and consists of a real part resistance and an imaginary part reactance.

The resistive and reactive arcs are equipartition lines, which may also be referred to as equipotential lines, where the reactance at all points is not positive or negative. The portion above the resistive line is called the inductive zone, where the reactance of all points is positive. The portion below the resistive line is called the capacitive region, where the reactance of all points is negative.

The impedance circle is an isoparasitic line, also known as an isoresistance line, where the resistances of all points are equal.

The short-circuit point has a resistance of 0ohm and a reactance of 0ohm. The resistance at the open point is infinite and the reactance is 0ohm. The matching point has a resistance of 50 ohms (also 75 ohms, etc., which is only an example here) and a reactance of 0 ohms.

In addition, the smith chart also includes a plurality of admittance circles (not shown in fig. 5) and susceptance arcs (not shown in fig. 5). The conductance of all points on each admittance circle is equal. Susceptances at all points on each susceptance arc are equal.

Smith charts are commonly used for impedance matching between resonant networks. Impedance matching means that the input impedance and the output impedance are approximately equal and opposite in direction. In this way, the resonant network can work properly with higher efficiency. If the impedance between the resonant networks is not matched, the working efficiency of the resonant networks is low, and even the working abnormality or direct burning of the resonant networks can be caused in severe cases.

In the impedance matching process of the smith chart, a matching circuit and a connection mode which are required to be connected for pulling the resonant network from the impedance point of a certain frequency to the matching point are determined according to the matching point and the impedance point of the resonant network at the certain frequency.

In the embodiment of the application, the smith chart can also be used for pulling the impedance point of the resonant network at a certain frequency to the short-circuit point. Specifically, according to the matching point on the smith chart and the impedance point of the resonant network at a certain frequency, the matching circuit and the connection mode to be connected for pulling the resonant network from the impedance point of the frequency to the short-circuit point can be determined. It is readily understood that the resonant network is equivalent to a short circuit at this frequency after being pulled to the short circuit point.

In the embodiment of the application, the smith chart can also be used to pull the impedance point of the resonant network at a certain frequency to an open circuit point. Specifically, according to the matching point on the smith chart and the impedance point of the resonant network at a certain frequency, the matching circuit and the connection mode to be connected for pulling the resonant network from the impedance point of the frequency to the open circuit point can be determined. It is readily understood that the resonant network is equivalent to an open circuit at this frequency after being pulled to the open circuit point.

Based on the above description, a smith chart can be understood as a chart in which each point corresponds to a plurality of data including frequency, impedance, reflection coefficient, standing wave ratio, admittance, insertion loss, and the like. Under the condition that parameters such as impedance, reflection coefficient and the like of the resonant network at a certain frequency are known, a matching circuit and a connection mode which are required to be connected for pulling the resonant network to a short circuit point, a matching point and an open circuit point can be determined by looking up the chart.

In addition, in the embodiment of the present application, the resonant network operates at the open point of the smith chart, and the short-circuit point and the matching point are not strictly limited, but the resonant network operates near the open point, near the short-circuit point and near the matching point.

The smith chart in the embodiment of the present application is described above in brief. Based on the above description, the following describes a method for optimizing a resonant network according to an embodiment of the present application.

The resonant network in the embodiment of the present application may refer to a resonant network formed by a capacitive element, an inductive element, a resistive element, or the like, or may refer to an equivalent resonant network formed by a process or a material such as an insertion finger, a pressing sheet, an acoustic surface, a film, a microstrip line, or the like, which is not particularly limited herein.

The resonant network in the embodiment of the application is connected with the radio frequency path in a first connection mode. The first connection mode can be series connection or one end is connected with the radio frequency path, and the other end is grounded.

That is, in one possible design, the resonant network may be in series with the radio frequency path. In another possible design, the resonant network may also be connected at one end to the radio frequency path and at the other end to ground.

It will be appreciated that when the resonant network is in series with a radio frequency path, if the resonant network is operating at the open point of the smith chart at a certain frequency, the radio frequency path is also operating at the open point of the smith chart at that frequency, which is equivalent to an open circuit. When one end of the resonant network is connected with the radio frequency channel and the other end is grounded, if the resonant network works at a short-circuit point of the smith chart at a certain frequency, the radio frequency channel is short-circuited by the resonant network at the frequency, and works at an open-circuit point of the smith chart and is equivalent to open-circuit.

In addition, in the embodiment of the present application, when the first connection mode is serial connection, the insertion loss of the resonant network in the target stop band is greater than the insertion loss in the target pass band. The first connection mode is that one end is connected with the radio frequency channel, and when the other end is grounded, the insertion loss of the resonant network in the target stop band is smaller than the insertion loss in the target pass band. The target stop band may be an ideal stop band to be achieved by the radio frequency channel, and the target pass band may be an ideal pass band to be achieved by the radio frequency channel.

The insertion loss is briefly described here. Insertion loss, i.e., insertion loss, refers to the loss of energy or gain when a circuit device or branch circuit is added to a circuit. For the resonant network, attenuation after the signal flows through is small, namely insertion loss of the resonant network is small, and attenuation after the signal flows through is large, namely insertion loss of the resonant network is large.

Taking the target stop band as B1RX (2110 MHz-2170 MHz) and the target pass band as B40+B41 (2300 MHz-2690 MHz) as examples, the first connection mode is series connection, and the insertion loss of the resonant network in the target stop band is exemplified to be larger than that in the target pass band.

Please refer to fig. 6, which is a schematic diagram of a resonant network according to an embodiment of the present application. As shown in fig. 6, the resonant network consists of a capacitive element of 0.8pF and an inductive element of 4.7 nH. The resonant network is connected in series in the radio frequency path.

A schematic diagram of the relationship between the insertion loss and the frequency of the resonant network can be referred to fig. 7. As shown in fig. 7, the insertion loss of the resonant network at M1 point, namely 2170MHz, is-0.319 dB. The insertion loss at the M2 point, i.e., 2300MHz, is-0.147 dB. The insertion loss at the M3 point, i.e., 2690MHz, was-0.013 dB. Thus, the insertion loss at the target stop band is larger than the insertion loss at the target pass band. It should be noted that, in the embodiment of the present application, the insertion loss is larger, that is, the absolute value of the index value is larger, and the following description is omitted.

Referring to fig. 8, a flowchart of a method for optimizing a resonant network according to an embodiment of the present application is provided. As shown in fig. 8, the method includes S801 to S805.

S801, determining a resonance network according to a target passband and a target stopband.

The resonant network satisfies that on the smith chart the operating point of the resonant network at the target passband is closer to the matching point of the smith chart than the operating point at the target stopband.

S802, determining a first parameter of the resonant network at a first frequency point.

The first frequency point is the frequency point closest to the target passband in the target stopband. Illustratively, the target stop band is B1RX and the target pass band is b40+b41. The frequency point closest to B40+B41 in B1RX is 2170MHz, i.e. the first frequency point is 2170MHz.

The first parameter may be a reflection coefficient. Wherein, the reflection coefficient refers to the ratio of the reflected voltage to the incident voltage. In the embodiment of the application, the reflection coefficient of the resonant network at the first frequency point can be obtained by simulating the resonant network. In some possible designs, the reflection coefficient of the resonant network at the first frequency point can also be obtained by calculation.

The first parameter may also be impedance. For an explanation of the impedance, reference may be made to the foregoing embodiments, and no further description is given here. In this embodiment of the present application, according to the capacitance value of the capacitive element in the resonant network, the inductance value of the inductive element and the resistance value of the resistive element may calculate the impedance of the resonant network at the first frequency point.

In some embodiments, the first parameter may also be admittance, insertion loss, S-parameter, etc.

Illustratively, the capacitance value of the capacitive element is C, the inductance value of the inductive element is L, the resistance value of the resistive element is R, and the angular frequency of the signal at the first frequency point is ω. The impedance Z of the resonant network at the first frequency point is:

it should be noted that, the resonant network in the embodiments of the present application may be determined according to the target passband, the target stopband, and the connection mode of the resonant network and the radio frequency channel. For example, the target stop band is B1RX, the target pass band is b40+b41, and the resonant network and the radio frequency path are connected in series. The resonant network may be as described above with respect to fig. 6.

S803, determining an equivalent circuit of the resonant network according to the first parameter.

The absolute value of the difference between the second parameter of the equivalent circuit at the first frequency point and the corresponding parameter of the first parameter is smaller than a preset threshold value. The second parameter may be a reflection coefficient, impedance, admittance, insertion loss, S-parameter, etc. The preset threshold value may be set according to actual needs, and is not specifically limited herein.

In the embodiment of the present application, the equivalent circuit may refer to a resonant network formed by one or more of a capacitive element, an inductive element, and a resistive element, or may refer to an equivalent element or an equivalent resonant network formed by a process or a material such as an interposer, a sheet, an acoustic surface, a film, a microstrip line, and the like, which is not specifically limited herein.

In one possible design, the equivalent circuit is a capacitive element or an inductive element. That is, in the embodiments of the present application, the resonant network may be equivalent to a capacitive element or an inductive element according to the first parameter. The following is a detailed description.

First, a case where the first parameter and the second parameter are both reflection coefficients will be described.

When the first parameter and the second parameter are both reflection coefficients, an equivalent capacitance or an equivalent inductance corresponding to the reflection coefficient of the resonant network at the first frequency point can be determined in the smith chart and used as an equivalent circuit. The absolute value of the difference between the reflection coefficient of the equivalent circuit at the first frequency point and the reflection coefficient of the resonant network at the first frequency point is smaller than a first preset threshold value. The first preset threshold is one of preset thresholds, and may be set according to actual needs, and is not specifically limited herein.

Illustratively, a resonant network is shown in fig. 6. The target stop band is B1RX, the target pass band is B40+B41, and the first frequency point is 2170MHz.

Referring to fig. 9, a schematic diagram of an equivalent circuit determined on a smith chart according to an embodiment of the present application is shown. As shown in fig. 9, a point M4 corresponding to the point M1 in fig. 7, a point M5 corresponding to the point M2 in fig. 7, and a point M6 corresponding to the point M3 in fig. 7 can be found in the smith chart.

Wherein, the point M4 corresponds to the point M1, and the absolute value of the difference between the reflection coefficient corresponding to the point M4 and the reflection coefficient corresponding to the point M1 is smaller than the first preset threshold. Point M5 is identical to point M2, and point M6 is identical to point M3, and will not be described in detail herein.

It can be seen that point M4 is located in the capacitive region of the smith chart. That is, the resonant network shown in fig. 6 may be equivalent to a capacitive element, and the capacitance value of the capacitive element may be obtained from a smith chart, which is 2.7pF.

The case where the first parameter and the second parameter are both impedances is described below.

Similar to the case where the first parameter and the second parameter are both reflection coefficients. When the first parameter and the second parameter are both impedances, an equivalent capacitance or an equivalent inductance corresponding to the impedance of the resonant network at the first frequency point can be determined in the smith chart and used as an equivalent circuit. The absolute value of the difference between the impedance of the equivalent circuit at the first frequency point and the impedance of the resonant network at the first frequency point is smaller than a second preset threshold value. The second preset threshold is one of preset thresholds, and may be set according to actual needs, and is not specifically limited herein.

The process of determining the equivalent circuit when the first parameter and the second parameter are both impedances is similar to the process of determining the equivalent circuit when the first parameter and the second parameter are both reflection coefficients, and will not be described herein.

It is understood that, through S803, a capacitive element or an inductive element equivalent to the resonant network at the first frequency point can be obtained, and the capacitance value of the capacitive element or the inductance value of the inductive element is known.

S804, determining a first circuit and a second connection mode according to the first frequency point and the equivalent circuit.

The first circuit and the second connection mode are satisfied, when the resonant network is not connected with the radio frequency path, the equivalent circuit is connected with the radio frequency path in the first connection mode, and when the first circuit is connected with the equivalent circuit in the second connection mode, the radio frequency path works at an open point of the smith chart at the first frequency point. The second connection mode is parallel connection or series connection.

It will be appreciated that at the first frequency point, the open point at which the radio frequency path operates at the smith chart includes a number of possible scenarios, each of which is described below.

First, the case where the first connection mode is series connection and the second connection mode is parallel connection will be described.

Since the equivalent circuit is in series with the rf path, the rf path operates at the open point of the smith chart at the first frequency point, indicating that the equivalent circuit operates at the open point of the smith chart. That is, after the first circuit is used to connect in parallel with the equivalent circuit, the operating point of the first frequency point of the equivalent circuit on the smith chart is pulled to the open point, so that the first frequency point radio frequency channel can operate at the open point of the smith chart.

The process of determining the first circuit to be connected and the second connection mode to pull the operating point of the first frequency point of the equivalent circuit to the open point on the smith chart can be implemented through the smith chart.

Taking the resonant network shown in fig. 6 as an example, the target stop band is B1RX, the target pass band is b40+b41, and the first frequency point is 2170MHz. The operating point of the resonant network at the first frequency point (2170 MHz) in the smith chart is M4 in fig. 9.

It can be determined from the smith chart that pulling M4 to the open point requires a 2nH of inductive elements in parallel. That is, the first circuit is an inductance element of 2nH, and the second connection mode is parallel connection.

The following describes the case where the first connection mode is a connection with the rf path at one end and the ground at the other end, and the second connection mode is a parallel connection.

Because one end of the equivalent circuit is connected with the radio frequency channel, the other end of the equivalent circuit is grounded, so that the radio frequency channel works at the open circuit point of the Smith chart at the first frequency point, and the equivalent circuit works at the short circuit point of the Smith chart. That is, after the first circuit is used to connect in parallel with the equivalent circuit, the working point of the first frequency point of the equivalent circuit on the smith chart is pulled to the short circuit point, so that the first frequency point radio frequency channel can work at the open circuit point of the smith chart.

The process of determining the first circuit to be connected and the second connection mode to pull the operating point of the first frequency point of the equivalent circuit to the short-circuit point on the smith chart can be realized through the smith chart.

Illustratively, the target passband is B1RX, the target stopband is B40, and the first frequency point is 2300MHz. The initial resonant network may be as shown in fig. 10. Please refer to fig. 10, which is a schematic diagram of another resonant network according to an embodiment of the present application. It can be seen that the resonant network consists of a series connection of a capacitive element of 0.3pF, a capacitive element of 1.2pF and an inductive element of 18 nH. One end of the resonant network is connected with the radio frequency path, and the other end is grounded.

According to the short-circuit point on the smith chart and the working point of the equivalent circuit of the resonant network at the first frequency point, the resonant network is pulled to the short-circuit point at the first frequency point, and after the 1.8nH inductive element and the 5.1nH inductive element are connected in series, the resonant network is connected in parallel. That is, the first circuit is formed by connecting an inductance element of 1.8nH and an inductance element of 5.1nH in series, and the second circuit is connected in parallel.

The following describes the case where the first connection mode is a connection with the rf path at one end and the ground at the other end, and the second connection mode is a series connection.

As described above, the operation of the first frequency point rf path at the open point of the smith chart illustrates that the equivalent circuit is operated at the short point of the smith chart. That is, after the first circuit is used to connect in parallel with the equivalent circuit, the working point of the first frequency point of the equivalent circuit on the smith chart is pulled to the short circuit point, so that the first frequency point radio frequency channel can work at the open circuit point of the smith chart.

Illustratively, the target passband is B40, the target stopband is B1RX, and the first frequency point is 2170MHz. The initial resonant network may be as shown in fig. 11. Please refer to fig. 11, which is a schematic diagram of another resonant network according to an embodiment of the present application. It can be seen that the resonant network consists of a 3.9pF capacitive element and a 1.3nH inductive element in parallel. One end of the resonant network is connected with the radio frequency path, and the other end is grounded.

According to the short-circuit point on the smith chart and the working point of the equivalent circuit of the resonant network at the first frequency point, a capacitor element of 1.2pF needs to be connected in series to the resonant network in order to pull the working point of the resonant network at the first frequency point to the short-circuit point. That is, the first circuit is a capacitive element of 1.2pF, and the second connection is series connection.

There may also be cases where both the first connection and the second connection are in series. In this case, since the equivalent circuit is connected in series with the rf path, the rf path operates at the open point of the smith chart at the first frequency point, indicating that the equivalent circuit operates at the open point of the smith chart. That is, after the first circuit is used to connect in parallel with the equivalent circuit, the operating point of the first frequency point of the equivalent circuit on the smith chart is pulled to the open point, so that the first frequency point radio frequency channel can operate at the open point of the smith chart. Specifically, the first circuit to be connected to pull the operating point of the first frequency point of the equivalent circuit to the open circuit point on the smith chart can be determined by the smith chart, and the second connection mode is series connection.

Through the step S804, it can be determined how to pull the operating point of the equivalent circuit at the first frequency point to the open circuit point or the short circuit point, so that the radio frequency path is equivalent to an open circuit at the first frequency point.

S805, connecting the first circuit with the resonant network in a second connection mode.

It will be appreciated that at the first frequency point, the S11 characteristics of the resonant circuit and the equivalent circuit are the same, so that the rf path operates at the open point of the smith chart, i.e. corresponds to an open circuit, at the first frequency point after the first circuit is connected to the resonant network in the second connection.

For example, in the resonant network shown in fig. 6, the target stop band is B1RX, the target pass band is b40+b41, and the first frequency point is 2170MHz. Through the above-mentioned S801-S804, it can be determined that the first circuit is an inductance element of 2.0nH, and the second connection mode is parallel connection. Then a 2.0nH inductive element can be connected in parallel with the resonant network resulting in an optimized resonant network as shown in fig. 12.

The relationship between the insertion loss and the frequency of the resonant network shown in fig. 12 is shown in fig. 13. Fig. 13 is a schematic diagram showing a relationship between insertion loss and frequency of another resonant network according to an embodiment of the present disclosure. Here, point M7 corresponds to point M1 in fig. 7, point M8 corresponds to point M2 in fig. 7, and point M9 corresponds to point M3 in fig. 7.

It can be seen that at the stop band, e.g. the first frequency point 2170MHz, i.e. M7, the insertion loss is about-11 dB. The insertion loss at passband, e.g., M8 at 2300MHz, is about-0.76 dB and at M9 at 2690MHz, about-0.09 dB. That is, the insertion loss of the optimized resonant network in the stop band is far greater than that in the pass band.

It is obvious that in fig. 7, the transition band from the stop band to the pass band, i.e. the frequency band covered by M1 to M2, has a relatively flat variation of the insertion loss, i.e. a relatively small roll-off coefficient. In fig. 13, the transition zones covered by M7 to M8 are more abrupt in the change of the insertion loss, i.e., the roll-off coefficient is larger. That is, the optimization method of the resonant network provided by the embodiment of the application does not need a complex process or a high-Q element, and can increase the roll-off coefficient of the resonant network with lower cost, thereby improving the performance of the resonant network.

It should be noted that, after the determined first circuit is connected to the resonant network in the second connection manner, the insertion loss of the resonant network in the target passband is not greatly affected, and the working point of the resonant network in the target passband can be pulled to the matching point of the smith chart.

The following will further describe the resonant network shown in fig. 6 as an example. Wherein, the target stop band is B1RX, the target pass band is B40+B41, and the first frequency point is 2170MHz.

As described above, the resonant network shown in fig. 6 can determine that the first circuit is an inductive element of 2nH and the second connection is parallel.

Referring to fig. 9, the resonant network shown in fig. 6 has an operating point M5 at 2300MHz of the end point of the passband and an operating point M6 at 2690MHz of the other end point of the passband. Since the upper half of the smith chart is an inductive region and the lower half is a capacitive region, that is, the resonant network is weakly capacitive at 2300MHz and weakly inductive at 2690 MHz.

And connecting the 2nH inductance element with the resonance network in parallel to obtain an optimized resonance network. Please refer to fig. 14, which is a schematic diagram of operating points of an optimized resonant network in a smith chart according to an embodiment of the present application. Among them, point M10 corresponds to point M4, point M11 corresponds to point M5, and point M12 corresponds to point M6.

As can be seen from comparing fig. 9 and fig. 14, M5 in fig. 9 is closer to the matching point than M4, so after the resonant network corresponding to fig. 9 is optimized, M4 is pulled to M10, that is, the open point of the smith chart, but M5 is not pulled to the open point, and only slightly approaches the open point, so that normal operation of the resonant network is not affected.

It can also be found that M12 is closer to the matching point than M6. This is due to the point M6 in fig. 9, which is due to its weak inductance, i.e. equivalent to an inductive element. Therefore, after the inductance of 2nH is connected in parallel, the inductance of the two inductance elements connected in parallel is slightly reduced compared with that before the inductance elements are connected in parallel, and the insertion loss of the resonance network in the passband can be further reduced.

Therefore, in the method for optimizing the resonant network provided by the embodiment of the application, when the first connection mode is the series connection, after the determined first circuit is connected with the equivalent circuit in the second connection mode, the insertion loss of the resonant network in the target stop band can be greatly increased, so that the resonant network is equivalent to the disconnection in the target stop band. When one end of the first connection mode is connected with the radio frequency channel and the other end of the first connection mode is grounded, after the determined first circuit is connected with the equivalent circuit in the second connection mode, the resonant network is equivalent to short circuit in the target stop band, signals flow into the ground through the resonant network, and the connection point of the radio frequency channel and the resonant network is equivalent to disconnection. In this way, the roll-off coefficient of the resonant network between the target pass band and the target stop band can be greatly increased. And the method has little influence on the insertion loss of the resonant network in the target passband.

It should be noted that, the optimization method of the resonant network provided by the embodiment of the application can increase the roll-off coefficient between the passband and the stopband of the resonant network with lower cost. Particularly, for a resonant network with a passband relatively close to a stopband, a high Q element with higher cost and a more complex process are generally required in the industry to realize a larger roll-off coefficient. And the high Q element and the process are basically in monopoly state, and the use cost is very high. The requirement on the Q value of the element is low, any complex process is not needed, the roll-off coefficient of the resonant network can be increased at very low cost, and the application value is very high.

In the embodiment of the application, the passband is relatively close to the stopband, which means that the difference between the passband and the stopband is within 200MHz. For example, the frequency point in the passband closest to the stop band is the second frequency point. The absolute value of the difference between the first frequency point and the second frequency point is smaller than a third preset threshold value, and the third threshold value is 200MHz. Of course, the third preset threshold is only exemplary, and may be other values, which are not specifically limited herein.

In addition, it should be noted that the embodiments of the present application are an optimization method for a resonant network, where the form of the initial resonant network may be various. Such as the resonant network shown in fig. 6, the resonant network shown in fig. 10, the resonant network shown in fig. 11, etc.

In some possible designs, the initial resonant network may also be a T-type resonant network. Illustratively, when the target passband is B1RX and the target stopband is B40, the T-type resonant network may be as shown in fig. 15. Please refer to fig. 15, which is a schematic diagram of a T-type resonant network according to an embodiment of the present application. The T-type resonant network consists of a capacitive element of 1.0pF, an inductive element of 6.2nH and an inductive element of 33 nH. Wherein, the capacitive element of 1.0pF and the inductive element of 6.2nH are connected in series in the radio frequency path, one end of the inductive element of 33nH is connected with the capacitive element of 1.0pF and the inductive element of 6.2nH, and the other end is grounded.

In addition to the resonant network shown in fig. 6, the above also shows a number of possible resonant networks. The following describes a method for optimizing a resonant network according to the embodiments of the present application, according to a first circuit determined by the resonant networks.

First, the resonant network shown in fig. 10 is described. The target passband is B1RX, the target stopband is B40, and the first frequency point is 2300MHz. As described above, the first circuit determined from the resonant network is composed of an inductance element of 1.8nH and an inductance element of 5.1nH in series, and the second connection is in parallel.

That is, after the resonant network shown in fig. 10 is optimized by using the method for optimizing the resonant network provided in the embodiment of the present application, the optimized resonant network is shown in fig. 16.

The optimized resonant network operates at a first frequency point, i.e., 2300MHz, at the short-circuit point of the smith chart. Thus, at the target stop band, the resonant network will short the rf path. After the signal flows to the connection point of the resonant network and the radio frequency path, the signal basically flows into the resonant network, and the radio frequency path after the connection point corresponds to open circuit.

Therefore, the resonant network shown in fig. 10 is optimized by adopting the method for optimizing the resonant network provided by the embodiment of the application, and the resonant network with a larger roll-off coefficient can be obtained.

The resonant network shown in fig. 11 is described below. Wherein, the target passband is B40, the target stopband is B1RX, and the first frequency point is 2170MHz. As described above, the first circuit determined from the resonant network is a capacitive element of 1.2pF and the second connection is series.

That is, after the resonant network shown in fig. 10 is optimized by using the method for optimizing the resonant network provided in the embodiment of the present application, the optimized resonant network is shown in fig. 17.

The optimized resonant network operates at the first frequency point, 2170MHz, at the short-circuit point of the smith chart. Thus, at the target stop band, the resonant network will short the rf path. After the signal flows to the connection point of the resonant network and the radio frequency path, the signal basically flows into the resonant network, and the radio frequency path after the connection point corresponds to open circuit.

Therefore, the resonant network shown in fig. 11 is optimized by adopting the method for optimizing the resonant network provided by the embodiment of the application, and the resonant network with a larger roll-off coefficient can be obtained.

The resonant network shown in fig. 15 is described below. Wherein, the target stop band is B40, the target pass band is B1RX, and the first frequency point is 2300MHz. As described above, the capacitive element of the first circuit, which is determined by the resonant network, is 2.7pF in series with the inductive element of 0.6nH, and the second connection is parallel.

That is, after the resonant network shown in fig. 15 is optimized by using the method for optimizing the resonant network provided in the embodiment of the present application, the optimized resonant network is shown in fig. 18.

The optimized resonant network operates at the open point of the smith chart at a first frequency point, i.e., 2300MHz. Thus, at the target stop band, the resonant network will break the rf path.

Therefore, the resonant network shown in fig. 15 is optimized by adopting the method for optimizing the resonant network provided by the embodiment of the application, and the optimized resonant network has a larger roll-off coefficient.

In addition, when the radio frequency channel includes a plurality of resonant networks, the method for optimizing the resonant networks provided by the embodiment of the application can be adopted to optimize each resonant network respectively, and the optimized resonant networks are cascaded, so that the performance of each resonant network in the radio frequency channel is comprehensively improved.

In other words, the resonant network after being optimized by the method for optimizing the resonant network provided by the embodiment of the present application is cascaded or stacked to form a complex and high-performance filter, a combiner, a duplexer, a multiplexer, etc. all fall within the protection scope of the present application, and the present application will not be repeated.

According to the optimization method of the resonant network, which is provided by the embodiment of the application, a complex process is not needed, and a high Q value element is not needed, so that the roll-off coefficient of the resonant network can be increased with lower cost, and the performance of the resonant network is improved.

Referring to fig. 19, a schematic diagram of an electronic device 1900 according to an embodiment of the present application is provided. The electronic device 1900 may be any of the above examples, for example, the electronic device 1900 may be a mobile phone, a computer, or the like. For example, as shown in fig. 19, the electronic device 1900 may include: a processor 1901 and a memory 1902. The memory 1902 is used to store computer-executable instructions. For example, in some embodiments, the processor 1901, when executing the instructions stored in the memory 1902, may cause the electronic device 1900 to perform any of the functions of the electronic device of the embodiments described above to implement the method of optimizing any of the resonant networks in the examples above.

It should be noted that, all relevant contents of each step related to the above method embodiment may be cited to the functional description of the corresponding functional module, which is not described herein.

Fig. 20 shows a schematic diagram of the composition of a chip system 2000 according to an embodiment of the present application. The chip system 2000 may be disposed in an electronic device. For example, the chip system 2000 may be disposed in a mobile phone. For example, the chip system 2000 may include: a processor 2001 and a communication interface 2002 for supporting the electronic device to implement the functions referred to in the above embodiments. In one possible design, the chip system 2000 may further include memory to hold program instructions and data necessary for the electronic device. The chip system can be composed of chips, and can also comprise chips and other discrete devices. It should be noted that, in some implementations of the present application, the communication interface 2002 may also be referred to as an interface circuit.

The present application further provides a computer storage medium having stored therein computer instructions which, when executed on a terminal device, cause the terminal device to perform the above-mentioned related method steps to implement the method in the above-mentioned embodiments.

The present application also provides a computer program product which, when run on a computer, causes the computer to perform the above-mentioned related steps to implement the method in the above-mentioned embodiments.

In addition, embodiments of the present application also provide an apparatus, which may be specifically a chip, a component, or a module, and may include a processor and a memory connected to each other; the memory is configured to store computer-executable instructions, and when the device is operated, the processor may execute the computer-executable instructions stored in the memory, so that the chip performs the methods in the above method embodiments.

The terminal device, the computer storage medium, the computer program product, or the chip provided in the embodiments of the present application are used to execute the corresponding methods provided above, so that the beneficial effects that can be achieved by the terminal device, the computer storage medium, the computer program product, or the chip can refer to the beneficial effects in the corresponding methods provided above, and are not described herein.

The above description has been made mainly from the point of view of the electronic device. To achieve the above functions, it includes corresponding hardware structures and/or software modules that perform the respective functions. Those of skill in the art will readily appreciate that the elements and algorithm steps of the examples described in connection with the embodiments disclosed herein may be implemented as hardware or combinations of hardware and computer software. Whether a function is implemented as hardware or computer software driven hardware depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.

The embodiments of the present application may divide functional modules of devices involved therein according to the above method examples, for example, each functional module may be divided corresponding to each function, or two or more functions may be integrated in one processing module. The integrated modules may be implemented in hardware or in software functional modules. It should be noted that, in the embodiment of the present application, the division of the modules is schematic, which is merely a logic function division, and other division manners may be implemented in actual implementation.

The functions or acts or operations or steps and the like in the embodiments described above may be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using a software program, it may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions described in accordance with embodiments of the present application are produced in whole or in part. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by a wired (e.g., coaxial cable, fiber optic, digital subscriber line (digital subscriber line, DSL)) or wireless (e.g., infrared, wireless, microwave, etc.). The computer readable storage medium may be any available medium that can be accessed by a computer or a data storage device including one or more servers, data centers, etc. that can be integrated with the medium. The usable medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a Solid State Disk (SSD)), or the like.

Although the present application has been described in connection with specific features and embodiments thereof, it will be apparent that various modifications and combinations can be made without departing from the spirit and scope of the application. Accordingly, the specification and drawings are merely exemplary illustrations of the present application as defined in the appended claims and are considered to cover any and all modifications, variations, combinations, or equivalents that fall within the scope of the present application. It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to include such modifications and variations as well.

Claims

1. A method for optimizing a resonant network, comprising:

determining a resonance network according to the target passband and the target stopband; the operating point of the resonant network at the target passband is closer to the matching point of the smith chart than the operating point at the target stopband;

determining a first parameter of the resonant network at a first frequency point; the first frequency point is the frequency point closest to the target passband in the target stopband, and the first parameter at least comprises one of the following: reflection coefficient, impedance, admittance, insertion loss, S parameter;

Determining a first circuit according to the first parameter; the first circuit is used for pulling the working point of the resonant network at the first frequency point to an open circuit point or a short circuit point of a smith chart, and pulling the working point of the resonant network at the target passband to a matching point of the smith chart;

the first circuit is connected to the resonant network to increase a roll-off coefficient of the resonant network.

2. The method of claim 1, wherein said determining a first circuit from said first parameter comprises:

determining an equivalent circuit of the resonant network according to the first parameter; the second parameter of the equivalent circuit at the first frequency point is satisfied, and the absolute value of the difference between the second parameter and the corresponding parameter in the first parameter is smaller than a preset threshold; the second parameter includes at least one of: reflection coefficient, impedance, admittance, insertion loss, S parameter;

determining a first circuit according to the first frequency point and the equivalent circuit; the first circuit is used for pulling the working point of the equivalent circuit at the first frequency point to an open circuit point or a short circuit point of a smith chart.

3. The method of claim 2, wherein the determining a first circuit from the first frequency point and the equivalent circuit comprises:

When the equivalent circuit is connected in series with a radio frequency channel, determining a first circuit and a second connection mode required for pulling the working point of the equivalent circuit at the first frequency point to the open point of the smith chart according to the open point and the first frequency point in the smith chart; the second connection mode comprises series connection and parallel connection.

4. The method of claim 2, wherein the determining a first circuit from the first frequency point and the equivalent circuit comprises:

when one end of the equivalent circuit is connected with a radio frequency channel and the other end of the equivalent circuit is grounded, determining a first circuit and a second connection mode required for pulling the working point of the equivalent circuit at the first frequency point to the short circuit point of the smith chart according to the short circuit point and the first frequency point in the smith chart; the second connection mode comprises series connection and parallel connection.

5. The method of claim 3 or 4, wherein said connecting the first circuit with the resonant network comprises:

and connecting the first circuit with the resonant network in the second connection mode.

6. The method of claim 1, wherein the resonant network is connected to the radio frequency path in a first connection; the first connection mode is serial connection or one end is connected with the radio frequency channel, and the other end is grounded;

The insertion loss of the resonant network in the target stop band is different from the insertion loss of the resonant network in the target pass band, and specifically comprises the following steps:

when the first connection mode is serial connection, the insertion loss of the resonant network in the target stop band is larger than the insertion loss in the target pass band;

the first connection mode is that one end is connected with the radio frequency channel, and when the other end is grounded, the insertion loss of the resonant network in the target stop band is smaller than the insertion loss in the target pass band.

7. The method of claim 2, wherein the first parameter and the second parameter are both reflectance; the preset threshold comprises a first preset threshold;

the determining the equivalent circuit of the resonant network according to the first parameter includes:

determining an equivalent capacitance or an equivalent inductance corresponding to the reflection coefficient of the resonant network at the first frequency point in the smith chart as the equivalent circuit; and the absolute value of the difference between the reflection coefficient of the equivalent circuit at the first frequency point and the reflection coefficient of the resonant network at the first frequency point is smaller than the first preset threshold value.

8. The method of claim 2, wherein the first parameter and the second parameter are both impedances; the preset threshold comprises a second preset threshold;

determining an equivalent capacitance or an equivalent inductance corresponding to the impedance of the resonant network at the first frequency point in the smith chart as the equivalent circuit; the absolute value of the difference between the impedance of the equivalent circuit at the first frequency point and the impedance of the resonant network at the first frequency point is smaller than the second preset threshold value.

9. The method of any one of claims 1-4, wherein the first parameter is a reflectance;

the determining a first parameter of the resonant network at a first frequency point includes:

and simulating the resonant network to determine the reflection coefficient of the resonant network at the first frequency point.

10. The method of any one of claims 1-4, wherein the first parameter is impedance;

and calculating the impedance of the resonant network at the first frequency point according to the capacitance value of the capacitive element in the resonant network, the inductance value of the inductive element and the resistance value of the resistive element.

11. The method of claim 2, wherein the equivalent circuit is a capacitive element or an inductive element.

12. The method according to any one of claims 1-4, wherein a frequency point in the target passband that is closest to the target stopband is a second frequency point;

the absolute value of the difference between the first frequency point and the second frequency point is smaller than a third preset threshold value.

13. An electronic device comprising one or more processors and one or more memories; the one or more memories coupled to the one or more processors, the one or more memories storing computer instructions;

the computer instructions, when executed by the one or more processors, cause the electronic device to perform the method of optimizing a resonant network of any of claims 1-12.

14. A computer readable storage medium, characterized in that the computer readable storage medium comprises computer instructions which, when run, perform the method of optimizing a resonant network according to any of claims 1-12.