CN115632306A - Preparation method of semiconductor laser - Google Patents
Preparation method of semiconductor laser Download PDFInfo
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- CN115632306A CN115632306A CN202211215079.0A CN202211215079A CN115632306A CN 115632306 A CN115632306 A CN 115632306A CN 202211215079 A CN202211215079 A CN 202211215079A CN 115632306 A CN115632306 A CN 115632306A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Abstract
The invention provides a preparation method of a semiconductor laser, which comprises the following steps: providing a semiconductor substrate layer; forming an active layer on the semiconductor substrate layer, the active layer including a quantum well layer; forming a first sub upper waveguide layer on one side of the active layer, which faces away from the semiconductor substrate layer; after the first sub upper waveguide layer is formed, carrying out induced quantum well intermixing treatment on a region of the quantum well layer close to the front cavity surface, wherein the induced quantum well intermixing treatment comprises annealing treatment; and after the induced quantum well intermixing treatment is carried out, forming a second sub upper waveguide layer on the surface of one side of the first sub upper waveguide layer, which is opposite to the active layer. The preparation method can improve the quality of the epitaxial material and the reliability of the semiconductor laser while avoiding the catastrophic damage of the optical mirror surface.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of a semiconductor laser.
Background
The edge-emitting semiconductor laser has the advantages of small volume, light weight, high electro-optic conversion efficiency, high reliability and the like, belongs to source devices in a laser industry chain, and is widely used in the fields of industrial processing, medical cosmetology, communication, radar and the like.
As the application fields expand, including pursuit of cost reduction, the demand for the output power of edge-emitting semiconductor lasers is continuously increasing. And the output power is increased, the light emitting surface of the edge-emitting laser is a natural cleavage surface, and the optical power density of the corresponding light emitting surface is increased. Under the high-power working condition, material defects and light absorption exist near the cavity surface, non-radiative convergence of carriers occurs, the band gap of the material shrinks, the temperature of the cavity surface is continuously increased, finally, irreversible Optical Mirror surface Catastrophic Damage (COMD) occurs, and the realization of high-reliability high-power output is a great challenge.
The width of the band gap of the cavity surface region is changed by a special technical method, and the increase of the band gap can effectively reduce the light absorption of the cavity surface region, thereby realizing high power and high reliability; the following techniques are mainly used to change the bandgap of the facet region: rapid Thermal Annealing Induced quantum Well Intermixing (RTA), impurity-Free Induced quantum Well Intermixing (IFVD), impurity-Induced quantum Well Intermixing (IID), ion Implantation Induced quantum Well Intermixing (IIID), laser Induced quantum Well Intermixing (Laser Induced Intermixing), plasma Enhanced Induced quantum Well Intermixing (PID), although to achieve quantum Well effects, higher Annealing temperatures and longer Annealing times are typically required, for example, at Diffusion depths of 1.5 μm from the surface of the quantum Well layer, annealing temperatures are at least as high as 800 ℃ to 900 ℃, and if more than 20nm blue shift is to be achieved, annealing times of 2 hours or more are required under the aforementioned conditions of 2 hours or even 20 hours; higher annealing temperatures and longer annealing times generally cause varying degrees of damage to the epitaxial material.
Disclosure of Invention
In view of this, the present invention provides a method for manufacturing a semiconductor laser, so as to solve the problem in the prior art that an epitaxial material in the semiconductor laser is damaged while an optical mirror surface is prevented from being catastrophically damaged.
The invention provides a preparation method of a semiconductor laser, which comprises the following steps: providing a semiconductor substrate layer; forming an active layer on the semiconductor substrate layer, the active layer including a quantum well layer; forming a first sub upper waveguide layer on one side of the active layer, which faces away from the semiconductor substrate layer; after the first sub upper waveguide layer is formed, carrying out induced quantum well intermixing treatment on a region of the quantum well layer close to the front cavity surface, wherein the induced quantum well intermixing treatment comprises annealing treatment; and after the induced quantum well intermixing treatment is carried out, forming a second sub upper waveguide layer on the surface of one side of the first sub upper waveguide layer, which faces away from the active layer.
Optionally, the temperature of the annealing treatment is 600-850 ℃, and the time of the annealing treatment is 30 s-5 min.
Optionally, the inducing quantum well intermixing process further comprises: injecting induced hybrid ions into a region of the first sub-upper waveguide layer close to the front cavity surface before annealing treatment is carried out; the annealing process induces the hybrid ions to diffuse from the first sub-upper waveguide layer to the region of the quantum well layer near the front facet.
Optionally, the induced confounding ions include Si ions, zn ions, or Be ions.
Optionally, after injecting the induced hybrid ions into a region of the first sub-upper waveguide layer close to the front cavity surface and before performing the annealing treatment, placing a semiconductor substrate on the upper surface of the first sub-upper waveguide layer; after the annealing process, the semiconductor substrate is removed.
Optionally, the process parameters of the step of injecting the impurity-inducing ions into the region of the first sub-upper waveguide layer near the front cavity surface include: the implantation energy is 50 KeV-150 KeV, and the implantation dosage is 1E12atom/cm 2 ～1E14atom/cm 2 The injection depth is 0.05-0.15 μm.
Optionally, the method for manufacturing a semiconductor laser further includes: before injecting the induced hybrid ions into the area of the first sub-upper waveguide layer close to the front cavity surface, forming a mask layer on the surface of one side of the partial first sub-upper waveguide layer back to the active layer, wherein the mask layer exposes the area of the first sub-upper waveguide layer close to the front cavity surface; the step of injecting the induced hybrid ions into the region of the first sub-upper waveguide layer close to the front cavity surface is as follows: injecting induced hybrid ions into a region, close to the front cavity surface, of the first sub upper waveguide layer by taking the mask layer as a mask; and removing the mask layer after annealing treatment.
Optionally, a size of a region of the first sub upper waveguide layer close to the front cavity surface in the light outgoing direction is 3 μm to 300 μm.
Optionally, the inducing quantum well intermixing process further comprises: before annealing treatment, forming an induced mixed source film on the upper surface of the area of the first sub upper waveguide layer close to the front cavity surface; after the annealing treatment, the induced impurity source film is removed.
Optionally, the induced mixed source film has diffusing ions therein, and the diffusing ions are suitable for diffusing from the induced mixed source film into the quantum well layer in the annealing treatment; optionally, the material of the impurity source-induced film includes silicon.
Optionally, the quantum well layer has diffusing ions therein, and the diffusing ions are suitable for diffusing from the quantum well layer to the induced mixed source film in the annealing treatment; optionally, the material of the impurity source-induced film includes silicon oxide.
Optionally, the thickness of the induced mixed source film is 50 nm-250 nm.
Optionally, for the induced mixed source film located on the upper surface of the region of the first sub upper waveguide layer close to the front cavity surface, the dimension of the induced mixed source film in the light outgoing direction is 1 μm to 300 μm.
Optionally, the method for manufacturing a semiconductor laser further includes: before annealing treatment, forming a protective layer on the upper surfaces of the induced mixed source film and the first sub upper waveguide layer; after the annealing treatment, the protective layer is removed.
Optionally, the material of the protective layer includes silicon nitride.
Optionally, the thickness of the protective layer is 100nm to 300nm.
Optionally, before the annealing treatment, placing a semiconductor substrate on the protective layer; after the annealing treatment, and before the protective layer is removed, the semiconductor substrate is removed.
Optionally, the material of the semiconductor substrate comprises gallium arsenide.
Optionally, the method for manufacturing a semiconductor laser further includes: and in the process of carrying out the induced quantum well intermixing treatment on the region of the quantum well layer close to the front cavity surface, carrying out the induced quantum well intermixing treatment on the region of the quantum well layer close to the back cavity surface.
Optionally, the method for manufacturing a semiconductor laser further includes: in the process of carrying out the induced quantum well intermixing treatment on the region of the quantum well layer close to the front cavity surface, the induced quantum well intermixing treatment is also carried out on the two side edge regions of the quantum well layer in the slow axis direction.
Optionally, the thickness of the first sub upper waveguide layer is less than or equal to 0.35 μm.
Optionally, the method for manufacturing a semiconductor laser further includes: forming an upper limiting layer on one side of the second sub-upper waveguide layer, which is far away from the active layer; a lower confinement layer and a lower waveguide layer are sequentially formed on the semiconductor substrate layer before the active layer is formed.
The technical scheme provided by the invention has the following effects:
1. according to the preparation method of the semiconductor laser, the region of the quantum well layer close to the front cavity surface is subjected to induced quantum well mixing treatment, so that the material band gap of the region of the quantum well layer close to the front cavity surface is increased, the light absorption of the front cavity surface is effectively inhibited, and the optical mirror surface is prevented from being damaged due to catastrophe. The step of carrying out the induced quantum well intermixing treatment on the region of the quantum well layer close to the front cavity surface is carried out after the first sub-upper waveguide layer is formed and before the first sub-upper waveguide layer is formed, so that the impurity-induced path in the quantum well intermixing treatment is shorter, the temperature and the time of annealing treatment adopted in the induced quantum well intermixing treatment can be reduced, the damage to the epitaxial material formed before the quantum well intermixing treatment is smaller, particularly the damage to the quantum well layer is smaller, the quality of the epitaxial material is improved, and the reliability of the semiconductor laser is improved.
2. Further, before annealing treatment, injecting induced hybrid ions into a region of the first sub-upper waveguide layer close to the front cavity surface; the annealing process induces the hybrid ions to diffuse from the first sub-upper waveguide layer to the region of the quantum well layer near the front facet. Because the distance between the quantum well layer and the upper surface of the first sub upper waveguide layer is relatively small, the step of injecting the induced hybrid ions into the region of the first sub upper waveguide layer close to the front cavity surface does not need to pass through the second sub upper waveguide layer, so that the injection energy is reduced, the small injection energy can reduce the lattice loss caused by the ion injection, and the injection damage to the first sub upper waveguide layer is reduced.
3. Further, the impurity source film has therein diffusing ions adapted to diffuse from the impurity source film into the quantum well layer in the annealing treatment. Because the longitudinal distance from the induced mixed source film to the quantum well layer is short, the diffusion path of diffusion ions in the induced mixed source film in the annealing treatment step is short, the temperature and time of the annealing treatment adopted in the induced quantum well intermixing treatment are reduced, and the damage to the epitaxial material formed before the quantum well intermixing treatment is small.
4. Further, the quantum well layer has diffusion ions therein, the diffusion ions are suitable for diffusing from the quantum well layer to the induced mixed source film in the annealing treatment, and the longitudinal distance from the induced mixed source film to the quantum well layer is short, so that the diffusion paths of the diffusion ions in the induced mixed source film in the annealing treatment step are short, the temperature and time of the annealing treatment adopted in the induced quantum well intermixing treatment are reduced, and the damage to the epitaxial material formed before the quantum well intermixing treatment is small.
5. Further, before the annealing treatment, a protective layer is formed on the upper surfaces of the induced mixed source film and the first sub upper waveguide layer; after the annealing treatment, the protective layer is removed. On one hand, the protective layer can play a role in protecting the first sub upper waveguide layer in the annealing treatment; on the other hand, the blue shift of the photoluminescence spectrum of the quantum well layer not covered with the induced mixed source film can be suppressed.
6. Further, before the annealing treatment, the semiconductor substrate is placed; after the annealing process, the semiconductor substrate is removed. The semiconductor substrate can provide arsenic pressure, and atoms in epitaxial layer materials such as the upper waveguide layer and/or the lower waveguide layer are prevented from being separated out in the annealing treatment process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flow chart of a method of fabricating a semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of hybrid ion implantation induction according to one embodiment of the present invention;
FIG. 3 is a schematic view of the formation of an induced hybrid source film according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a quantum well layer structure according to an embodiment of the invention;
FIG. 6 is a schematic diagram of a structure of a quantum well layer according to another embodiment of the present invention;
FIG. 7 is a schematic structural view of a quantum well layer according to yet another embodiment of the present invention;
fig. 8 is a schematic structural view of a quantum well layer according to still another embodiment of the present invention.
Description of reference numerals:
100-a semiconductor substrate layer; 200-an active layer; 210 — a first barrier layer; 220-quantum well layer; 221-pre-induction promiscuous region; 222-pre-induced promiscuous region; 223-pre-induced promiscuous region; 224-post-induction promiscuous region; 225-induced confounding region; 230-a second barrier layer; 310-a first sub-upper waveguide layer; 320-a second sub upper waveguide layer; 400-upper confinement layer; 500-a lower confinement layer; 600-a lower waveguide layer; 700-a buffer layer; 800-a cap layer; 900-inducing a mixed source film; 1000-protective layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 1 in combination with fig. 2, the present embodiment provides a method for manufacturing a semiconductor laser, including:
step S1: providing a semiconductor substrate layer 100;
step S2: forming an active layer 200 on the semiconductor substrate layer 100, the active layer 200 including a quantum well layer 220;
and step S3: forming a first sub-upper waveguide layer 310 on a side of the active layer 200 facing away from the semiconductor substrate layer 100;
and step S4: after the first sub upper waveguide layer 310 is formed, performing induced quantum well intermixing treatment on a region of the quantum well layer 220 close to the front cavity surface, wherein the induced quantum well intermixing treatment comprises annealing treatment;
step S5: after the induced quantum well intermixing process is performed, a second sub upper waveguide layer 320 is formed on a surface of the first sub upper waveguide layer 310 on a side facing away from the active layer 200 (see fig. 4).
In the application, the region of the quantum well layer 220 close to the front cavity surface is subjected to induced quantum well intermixing treatment, so that the band gap of the material of the region of the quantum well layer 220 close to the front cavity surface is increased, further the light absorption of the front cavity surface is effectively inhibited, and the optical mirror surface is prevented from being damaged by catastrophe. Because the step of performing the quantum well intermixing inducing treatment on the region of the quantum well layer 220 close to the front cavity surface is performed after the first sub-upper waveguide layer 310 is formed and before the first sub-upper waveguide layer 310 is formed, the path induced by the impurities in the quantum well intermixing treatment is short, so that the temperature and time of the annealing treatment adopted in the quantum well intermixing inducing treatment can be reduced, the damage to the epitaxial material formed before the quantum well intermixing treatment is small, particularly the damage to the quantum well layer 220 is small, the quality of the epitaxial material is improved, and the reliability of the semiconductor laser is improved.
Specifically, the material band gap of the region of the quantum well layer 220 near the front facet increases such that the wavelength corresponding to the material band gap of the region of the quantum well layer 220 near the front facet has a blue shift of 20nm or more.
Specifically, the material of the semiconductor substrate layer 100 includes, but is not limited to, gaAs or InP. The material of the active layer 200 includes, but is not limited to, inGaAs, alGaInAs, gaAs, alGaInP, or GaInP. The material of the first sub upper waveguide layer 310 includes, but is not limited to, alGaAs. The material of the second sub upper waveguide layer 320 is the same as that of the first sub upper waveguide layer 310.
Specifically, the method for forming the active layer 200 includes, but is not limited to, an epitaxial growth process such as Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE). The method for forming the first sub upper waveguide layer 310 includes, but is not limited to, an epitaxial growth process such as MOCVD or MBE. Methods for forming second sub upper waveguide layer 320 include, but are not limited to, epitaxial growth processes such as MOCVD or MBE. The method of forming the first sub upper waveguide layer 310 may be the same as or different from the method of forming the second sub upper waveguide layer 320.
In one embodiment of the invention, the temperature of the annealing treatment is 600 ℃ to 850 ℃, and exemplarily, the temperature of the annealing treatment is 600 ℃, 650 ℃, 700 ℃, 750 ℃, 800 ℃ or 850 ℃; the time of the annealing treatment is 30s to 5min, and exemplarily, the time of the annealing treatment is 30s, 1min, 1.5min, 2min, 2.5min, 3min, 3.5min, 4min, 4.5min or 5min. The Annealing treatment may be Rapid Thermal Annealing (RTA) or tube Annealing.
It can be understood that the relationship between the temperature of the annealing treatment and the time of the annealing treatment is in negative correlation, and when the temperature of the annealing treatment is higher, the time of the annealing treatment can be relatively shortened; when the temperature of the annealing treatment is low, the time of the annealing treatment can be relatively prolonged.
In an embodiment of the present invention, the thickness of the first sub upper waveguide layer 310 is less than or equal to 0.35 μm, and illustratively, the thickness of the first sub upper waveguide layer 310 is 0.05 μm, 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, or 0.35 μm. The lower limit of the thickness of the first sub upper waveguide layer 310 is 0.1 μm, which is advantageous in that: the first sub upper waveguide layer 310 may protect the material of the active layer 200 from oxidation, and if the thickness of the first sub upper waveguide layer 310 is too thin, the density of the first sub upper waveguide layer 310 may decrease, and there are more voids, so that the material of the active layer 200 is protected from oxidation.
Referring to fig. 2, in an embodiment of the invention, the inducing quantum well intermixing process further comprises: before the annealing process is performed, induced hybrid ions are implanted into a region of the first sub-upper waveguide layer 310 near the front facet (see the region indicated by the arrow in fig. 2); the annealing process will induce the hybrid ions to diffuse from the first sub-upper waveguide layer 310 into the quantum well layer 220 in the region near the front facet.
It is understood that the material of the first sub-upper waveguide layer 310 may be AlGaAs, the material of the active layer 200 includes, but is not limited to, inGaAs, alGaInAs, gaAs, alGaInP, or GaInP, and when the induced hybrid ions having higher energy are injected into the first sub-upper waveguide layer 310, the induced hybrid ions collide the group iii atoms and the group v atoms in the material of the first sub-upper waveguide layer 310 from the crystal lattice, creating group iii vacancies and group v vacancies and interstitial atoms. During the collision process, the hybrid ions are induced to lose energy due to collision and ionization until the energy is insufficient to again knock target atoms off the lattice and stay in interstitial or lattice positions (only if the implanted ions are of the same species as the target atoms and no longer have sufficient energy to perform the next collision after knocking the target atoms off the lattice positions). Inducing the hybrid ion implantation introduces a large number of point defects that provide conditions for interdiffusion of the constituent atoms in the first sub-upper waveguide layer 310. Target atoms collided from the crystal lattice continue to move due to energy acquisition to generate cascade collision until the target atoms are diffused to the active layer 200, finally, the composition and the crystal lattice structure of the material of the quantum well layer 220 are changed, and the band gap of the material of the quantum well layer 220 is increased. In addition, since the distance from the quantum well layer 220 to the upper surface of the first sub-upper waveguide layer 310 is relatively small, the step of injecting the induced hybrid ions into the region of the first sub-upper waveguide layer 310 close to the front cavity surface does not need to pass through the second sub-upper waveguide layer 320, so that the injection energy is reduced, and the small injection energy can reduce the lattice loss caused by the ion injection and reduce the injection damage to the first sub-upper waveguide layer 310.
It is understood that the induced miscellaneous ions may be vertically injected into the region of the first sub-upper waveguide layer 310 near the front cavity surface along the direction indicated by the arrow in fig. 2, or may be injected into the region of the first sub-upper waveguide layer 310 near the front cavity surface at any inclined angle.
In one embodiment of the present invention, the induced confounding ions include Si ions, zn ions, or Be ions.
In an embodiment of the present invention, the process parameters of the step of implanting the impurity-inducing ions into the region of the first sub-upper waveguide layer 310 near the front cavity surface include: the implantation energy is 50 KeV-150 KeV, and exemplarily, the implantation energy is 50KeV, 60KeV, 80KeV, 100KeV, 120KeV, 140KeV or 150KeV; the implantation dose is 1E12atom/cm 2 ～1E14atom/cm 2 Illustratively, the implant dose is 1E12atom/cm 2 、5E12atom/cm 2 、1E13atom/cm 2 、5E13atom/cm 2 Or 1E14atom/cm 2 (ii) a The implant depth is 0.05 μm to 0.15 μm, and illustratively, the implant depth is 0.05 μm, 0.06 μm, 0.08 μm, 0.1 μm, 0.12 μm, 0.14 μm, or 0.15 μm.
It is understood that the smaller implantation energy can reduce the lattice loss caused by the ion implantation, and reduce or avoid the damage to the first sub-upper waveguide layer 310; the implantation energy and the implantation depth are in positive correlation, and the implantation depth is larger when the implantation energy is larger, for example, the implantation depth is 100nm, the implantation energy can be controlled within 100KeV, the implantation depth is 200nm, and the implantation energy can be controlled within 200 KeV. The implantation dose is related to the amount of blue shift of the region of the quantum well layer 220 close to the front cavity surface after the quantum well intermixing is induced, and the larger the implantation dose is, the larger the amount of blue shift of the region of the quantum well layer 220 close to the front cavity surface after the quantum well intermixing is induced. However, if the implantation dose is too large, a large number of dislocation loops are generated on the material surface of first sub-upper waveguide layer 310, and these dislocation loops combine with point defects in the lattice structure to reduce the concentration of the point defects, thereby suppressing the diffusion of induced hybrid ions. Within the above implantation dosage range, the wavelength corresponding to the material bandgap of the quantum well layer 220 is increased by more than 20nm after ion implantation, and the suppression of the diffusion of the induced hybrid ions caused by the over-high implantation dosage can be avoided.
In an embodiment of the present invention, after implanting the induced hybrid ions into the region of the first sub-upper waveguide layer 310 close to the front cavity surface, and before performing the annealing process, a semiconductor substrate is placed on the upper surface of the first sub-upper waveguide layer 310; after the annealing process, the semiconductor substrate is removed. For example, the semiconductor substrate may be a gallium arsenide substrate, and the semiconductor substrate may provide an arsenic pressure during the annealing process to prevent the precipitation of arsenic atoms in the epitaxial layer material below the semiconductor substrate during the annealing process.
In an embodiment of the present invention, the method for manufacturing a semiconductor laser further includes: before injecting the induced hybrid ions into the region of the first sub-upper waveguide layer 310 close to the front cavity surface, forming a mask layer on the surface of a part of the first sub-upper waveguide layer 310 opposite to the active layer 200, wherein the mask layer exposes the region of the first sub-upper waveguide layer 310 close to the front cavity surface; the step of injecting the induced hybrid ions into the region of the first sub-upper waveguide layer 310 near the front cavity surface is: injecting induced hybrid ions into a region of the first sub-upper waveguide layer 310 close to the front cavity surface by taking the mask layer as a mask; and removing the mask layer after annealing treatment.
In particular, methods of forming the mask layer include, but are not limited to, photolithography. The material of the mask layer comprises silicon nitride or photoresist.
It should be noted that in this embodiment, the induced hybrid ions are implanted into a region of the first sub-upper waveguide layer 310 close to the front cavity surface, and the implantation depth of the induced hybrid ions is smaller than the thickness of the first sub-upper waveguide layer 310, so that the induced hybrid ions are not directly implanted into the quantum well layer 220. This has the advantages that: the adopted injection energy is smaller, and the injection damage to the first sub upper waveguide layer 310 is reduced.
In another embodiment, the induced hybrid ions can be implanted into a portion of the quantum well layer 220 while implanting the induced hybrid ions into a region of the first sub-upper waveguide layer 310 near the front cavity surface.
In this embodiment, only the region of the quantum well layer 220 close to the front cavity surface is subjected to the quantum well intermixing inducing process, and in an embodiment of the present invention, the size of the region of the first sub upper waveguide layer 310 close to the front cavity surface in the light exiting direction is 3 μm to 300 μm, and exemplarily, the size of the region of the first sub upper waveguide layer 310 close to the front cavity surface in the light exiting direction is 3 μm, 5 μm, 10 μm, 20 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, or 300 μm.
It can be understood that, after the region of the first sub-upper waveguide layer 310 close to the front cavity surface is subjected to the induced quantum well intermixing process, the material bandgap of the region is increased, and the increase of the bandgap can effectively suppress the light absorption in the cavity surface region, thereby avoiding the catastrophic damage of the optical mirror surface. If the dimension of the region of the first sub-upper waveguide layer 310 close to the front cavity surface in the light emergent direction is too small, the injection angle deviation is large, and it is difficult to determine whether the cavity surface has a quantum well intermixing region due to errors of the preparation process; if the size of the region of the first sub-upper waveguide layer 310 close to the front cavity surface in the light extraction direction is too large, the length of the current injection region in the cavity length direction is reduced, so that the gain area is reduced, and the effect of improving the light emitting efficiency of the semiconductor laser is weak.
Referring to fig. 5, after the induced quantum well intermixing process is performed on the region of the quantum well layer 220 close to the front facet, front induced intermixing regions 221 are formed in the quantum well layer 220, and the front induced intermixing regions 221 are uniformly distributed in the slow axis direction.
Referring to fig. 6, after the induced quantum well intermixing process is performed on the region of the quantum well layer 220 near the front facet, a front induced intermixing region 222 is formed in the quantum well layer 220. The pre-induced confounding region 222 is partially distributed in the slow axis direction.
In the present embodiment, referring to fig. 4, the active layer 200 further includes a first barrier layer 210 and a second barrier layer 230, and the quantum well layer 220 is located between the first barrier layer 210 and the second barrier layer 230.
Referring to fig. 4, in an embodiment, the method of fabricating a semiconductor laser further includes: forming an upper confinement layer 400 on a side of the second sub-upper waveguide layer 320 facing away from the active layer 200; before the active layer 200 is formed, a lower confinement layer 500 and a lower waveguide layer 600 are sequentially formed on the semiconductor substrate layer 100.
Referring to fig. 4, in an embodiment, the method of fabricating a semiconductor laser further includes: forming a buffer layer 700 on the semiconductor substrate layer 100 before forming the lower confinement layer 500; a cap layer 800 is formed on a side of the upper confinement layer 400 facing away from the second sub-upper waveguide layer 320.
Specifically, the material of the upper confinement layer 400 includes, but is not limited to, alGaAs. The material of the lower confinement layer 500 includes, but is not limited to, alGaAs. The material of lower waveguide layer 600 includes, but is not limited to, alGaAs. The material of buffer layer 700 includes, but is not limited to, gaAs. The material of cap layer 800 includes, but is not limited to, gaAs.
Specifically, the method of forming the upper confinement layer 400 includes, but is not limited to, an epitaxial growth process such as MOCVD or MBE. Methods of forming the lower confinement layer 500 include, but are not limited to, an epitaxial growth process such as MOCVD or MBE. Methods of forming lower waveguide layer 600 include, but are not limited to, epitaxial growth processes such as MOCVD or MBE. Methods of forming the buffer layer 700 include, but are not limited to, an epitaxial growth process such as MOCVD or MBE. Methods of forming cap layer 800 include, but are not limited to, epitaxial growth processes such as MOCVD or MBE.
Example 2
The present embodiment provides a method for manufacturing a semiconductor laser, and the present embodiment is different from embodiment 1 in that: referring to fig. 3, the induced quantum well intermixing process includes: forming an induced hybrid source film 900 on an upper surface of a region of the first sub upper waveguide layer 310 near the front cavity surface; then, carrying out annealing treatment; after the annealing treatment, the induced impurity source film 900 is removed.
In an embodiment of the present invention, the method of forming the induced mixed source film 900 includes, but is not limited to, MOCVD, MBE, plasma Enhanced Chemical Vapor Deposition (PECVD), or magnetron sputtering.
In an embodiment of the present invention, the impurity-induced source film 900 has therein diffusing ions adapted to diffuse from the impurity-induced source film 900 into the quantum well layer 220 in the annealing process; preferably, the material of the induced mixed source film 900 includes silicon.
It is understood that the material of the first sub upper waveguide layer 310 may be AlGaAs, and the material of the active layer 200 includes, but is not limited to, inGaAs, alGaInAs, gaAs, alGaInP, or GaInP, and due to the higher solid solubility of silicon atoms in the above materials, at the interface between the induced mixed source film 900 and the first sub upper waveguide layer 310, the silicon atoms in the induced mixed source film 900 will diffuse into the lattice structure of AlGaAs of the material of the first sub upper waveguide layer 310 under high temperature conditions, and enter into the AlGaAs in two ways, one is occupying the lattice position of the group iii element as a substitutional atom, and the other is occupying the interstitial position as an interstitial atom, and the silicon atoms in the interstitial position will diffuse further inward from the interface and enter into the active layer 200 based on similar principles, and finally change the material composition of the quantum well layer 220, so that the material bandgap of the quantum well layer 220 is increased. In addition, since the longitudinal distance from the induced mixed source film 900 to the quantum well layer 220 is short, the diffusion path of the diffusion ions in the induced mixed source film 900 in the annealing treatment step is short, the temperature and time of the annealing treatment adopted in the induced quantum well intermixing treatment are reduced, and the damage to the epitaxial material formed before the quantum well intermixing treatment is small.
In an embodiment of the present invention, the quantum well layer 220 has therein diffusing ions adapted to diffuse from the quantum well layer 220 to the impurity source inducing film 900 in the annealing process; preferably, the material of the impurity source-inducing film 900 includes silicon oxide.
It is understood that the material of the first sub-upper waveguide layer 310 may be AlGaAs, the material of the active layer 200 includes, but is not limited to, inGaAs, alGaInAs, gaAs, alGaInP, or GaInP, and due to the higher solid solubility of gallium atoms in silicon oxide, under high temperature conditions, gallium atoms at the interface of the first sub-upper waveguide layer 310 in contact with the induced mixed source film 900 diffuse into the induced mixed source film 900, resulting in a large number of gallium vacancies, which can move from the interface to the inside of the first sub-upper waveguide layer 310 and diffuse into the active layer 200, and finally increase vacancies in the quantum well layer 220, and the material band gap of the quantum well layer 220 increases. In addition, since the longitudinal distance from the induced mixed source film 900 to the quantum well layer 220 is short, the diffusion path of the diffusion ions in the induced mixed source film 900 in the annealing treatment step is short, the temperature and time of the annealing treatment adopted in the induced quantum well intermixing treatment are reduced, and the damage to the epitaxial material formed before the quantum well intermixing treatment is small.
In an embodiment of the present invention, the thickness of the induced mixed source film 900 is 50nm to 250nm, and the thickness of the induced mixed source film 900 is, for example, 50nm, 100nm, 150nm, 200nm, or 250nm.
It is understood that the thickness of the induced mixed source film 900 is positively correlated with the amount of blue shift in the region of the quantum well layer 220 near the front facet after the induced quantum well intermixing process. The thicker the thickness of the induced mixed source film 900 is, the larger the amount of blue shift in the region of the quantum well layer 220 near the front cavity surface after the induced quantum well intermixing process is. However, when the thickness of the induced mixed source film 900 is increased to a certain extent, the amount of blue shift in the region of the quantum well layer 220 close to the front cavity surface after the induced quantum well intermixing process does not change significantly as the thickness continues to increase, and the raw material is wasted as the thickness of the induced mixed source film 900 continues to increase.
In an embodiment of the present invention, for the induced mixed source film 900 on the upper surface of the region of the first sub upper waveguide layer 310 near the front cavity surface, the dimension of the induced mixed source film 900 in the light outgoing direction is 1 μm to 300 μm, and exemplarily, the dimension of the induced mixed source film 900 in the light outgoing direction is 1 μm, 5 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, or 300 μm.
It is understood that after the induced quantum well intermixing process, the material band gap of the portion of the active layer 200 covered by the induced intermixing source film 900 may increase; increasing the size of the induced mixed source film 900 in the light-emitting direction increases the area of the active layer 200 with the increased band gap, which is beneficial to reducing the light absorption in the cavity surface area, and realizes a high-power and high-reliability semiconductor laser. However, if the area of the active layer 200 is too large, the length of the current injection region in the cavity length direction is reduced, so that the gain area is reduced, and the effect of improving the light emission efficiency of the semiconductor laser is weak.
Referring to fig. 3, in an embodiment of the present invention, a method for manufacturing a semiconductor laser further includes: forming a protection layer 1000 on the upper surfaces of the induced mixed source film 900 and the first sub upper waveguide layer 310 before the annealing process is performed; after the annealing process, the protective layer 1000 is removed.
It is to be appreciated that, in one aspect, the protective layer 1000 may protect the first sub-upper waveguide layer 310 during the annealing process; on the other hand, blue shift of the material band gap in the non-induced mixed source film 900 coverage area can be suppressed; in addition, the protection layer 1000 covers the first sub upper waveguide layer 310, which can suppress the precipitation of atoms of the first sub upper waveguide layer 310 and prevent the first sub upper waveguide layer 310 from being degraded.
In an embodiment of the present invention, the material of the protection layer 1000 includes silicon nitride.
In an embodiment of the invention, the thickness of the protection layer 1000 is 100nm to 300nm, and exemplarily, the thickness of the protection layer 1000 is 100nm, 150nm, 200nm, 250nm or 300nm.
In one embodiment of the present invention, a semiconductor substrate is placed on the protective layer 1000 before the annealing process; after the annealing process, and before the protective layer 1000 is removed, the semiconductor substrate is removed. For example, the semiconductor substrate may be a gallium arsenide substrate, and the semiconductor substrate may provide an arsenic pressure during the annealing process to prevent the precipitation of arsenic atoms in the epitaxial layer material below the semiconductor substrate during the annealing process.
The preparation method of the present embodiment is the same as that of the previous embodiment, and is not repeated herein.
Example 3
The present embodiment provides a method for manufacturing a semiconductor laser, and the present embodiment is different from the foregoing embodiments in that: in the process of performing the induced quantum well intermixing process on the region of the quantum well layer 220 close to the front cavity surface, the induced quantum well intermixing process is also performed on the region of the quantum well layer 220 close to the back cavity surface. The advantages are that: the back facet has a weaker light absorption than the front facet due to the lower photon density. The region close to the back cavity surface is subjected to induced quantum well intermixing treatment, so that the band gap width of the material in the back cavity surface region can be changed, and the light absorption of the back cavity surface is avoided.
Referring to fig. 7, the induced quantum well intermixing process causes a front induced intermixing region 223 to be formed in a region of the quantum well layer 220 near the front facet and a rear induced intermixing region 224 to be formed in a region of the quantum well layer 220 near the back facet.
It is understood that, in the embodiment of the present invention, the front induction hybrid region 223 is at least a partial region of the quantum well layer 220 in the slow axis direction near the front cavity surface. The back induced intermixing region 224 is at least a portion of the quantum well layer 220 near the back facet.
Specifically, the shape of the region of the quantum well layer 220 near the back facet is the same as or different from the shape of the region of the quantum well layer 220 near the front facet; the size of the region of the quantum well layer 220 near the back facet may be the same as or different from the size of the region of the quantum well layer 220 near the front facet.
The same contents of the preparation method of this embodiment and the preparation method of the previous embodiment are not repeated herein.
Example 4
The method for manufacturing a semiconductor laser provided in this embodiment is different from the foregoing embodiments in that: in the process of performing the induced quantum well intermixing process on the region of the quantum well layer 220 close to the front cavity surface, the induced quantum well intermixing process is also performed on the two side edge regions of the quantum well layer 220 in the slow axis direction. Has the advantages that: the laser can provide a better refractive index waveguide effect, and can also form non-current injection regions on two sides of the ridge region, thereby improving the injection efficiency of current and reducing the threshold value of the laser.
Referring to fig. 8, the induced quantum well intermixing process causes the region of the quantum well layer 220 near the front facet, the region of the quantum well layer 220 near the back facet, and both side edge regions of the quantum well layer 220 in the slow axis direction to form an induced intermixing region 225.
The preparation method of the present embodiment is the same as that of the previous embodiment, and is not repeated herein.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (12)
1. A method for fabricating a semiconductor laser, comprising:
providing a semiconductor substrate layer;
forming an active layer on the semiconductor substrate layer, the active layer comprising a quantum well layer;
forming a first sub-upper waveguide layer on one side of the active layer, which faces away from the semiconductor substrate layer;
after the first sub-upper waveguide layer is formed, carrying out induced quantum well intermixing treatment on a region of the quantum well layer close to the front cavity surface, wherein the induced quantum well intermixing treatment comprises annealing treatment;
and after the induced quantum well intermixing treatment is carried out, forming a second sub upper waveguide layer on the surface of one side of the first sub upper waveguide layer, which faces away from the active layer.
2. A method for fabricating a semiconductor laser as claimed in claim 1 wherein the temperature of the annealing is 600 ℃ to 850 ℃ and the time of the annealing is 30s to 5min.
3. A method of fabricating a semiconductor laser as claimed in claim 1 wherein the induced quantum well intermixing process further comprises: injecting induced hybrid ions into a region of the first sub-upper waveguide layer close to the front cavity surface before the annealing treatment is carried out;
the annealing treatment induces the hybrid ions to diffuse from the first sub-upper waveguide layer to the region of the quantum well layer close to the front cavity surface;
preferably, the induction hybrid ions include Si ions, zn ions, or Be ions;
preferably, after implanting the induced hybrid ions into the region of the first sub upper waveguide layer close to the front cavity surface and before performing the annealing treatment, placing a semiconductor substrate on the upper surface of the first sub upper waveguide layer; after the annealing process, the semiconductor substrate is removed.
4. A method of fabricating a semiconductor laser as claimed in claim 3 wherein the process parameters of the step of implanting induced intermixed ions into the region of the first sub-upper waveguide layer proximate the front facet surface include: the implantation energy is 50 KeV-150 KeV, and the implantation dosage is 1E12atom/cm 2 ～1E14atom/cm 2 The injection depth is 0.05-0.15 μm.
5. A method of fabricating a semiconductor laser as claimed in claim 3 further comprising: before injecting induced hybrid ions into a region, close to the front cavity surface, of the first sub upper waveguide layer, forming a mask layer on the surface, back to the active layer, of one side of a part of the first sub upper waveguide layer, wherein the mask layer exposes the region, close to the front cavity surface, of the first sub upper waveguide layer; injecting induced hybrid ions into a region of the first sub-upper waveguide layer close to the front cavity surface: injecting induced hybrid ions into a region, close to the front cavity surface, of the first sub upper waveguide layer by taking the mask layer as a mask; after the annealing treatment is carried out, removing the mask layer;
preferably, the dimension of the area of the first sub upper waveguide layer close to the front cavity surface in the light outgoing direction is 3 μm to 300 μm.
6. A method of fabricating a semiconductor laser as claimed in claim 1 wherein the induced quantum well intermixing process further comprises: before the annealing treatment, forming an induced mixed source film on the upper surface of the region of the first sub upper waveguide layer close to the front cavity surface; removing the induced mixed source film after the annealing treatment;
preferably, the impurity-induced source film has diffusing ions therein, the diffusing ions being adapted to diffuse from the impurity-induced source film into the quantum well layer in the annealing treatment; preferably, the material of the impurity source-induced film includes silicon;
preferably, the quantum well layer has diffusing ions therein, the diffusing ions being adapted to diffuse from the quantum well layer to the induced mixed source film in the annealing process; preferably, the material of the impurity source-induced film includes silicon oxide;
preferably, the thickness of the induced mixed source film is 50 nm-250 nm;
preferably, for the induced mixed source film located on the upper surface of the region of the first sub upper waveguide layer close to the front cavity surface, the dimension of the induced mixed source film in the light outgoing direction is 1 μm to 300 μm.
7. A method of fabricating a semiconductor laser as claimed in claim 6 further comprising: forming a protective layer on the upper surfaces of the induced mixed source film and the first sub upper waveguide layer before the annealing treatment; after the annealing treatment is carried out, removing the protective layer;
preferably, the material of the protective layer comprises silicon nitride;
preferably, the thickness of the protective layer is 100 nm-300 nm;
preferably, a semiconductor substrate is placed on the protective layer before the annealing treatment; after the annealing process, and before the protective layer is removed, the semiconductor substrate is removed.
8. A method of fabricating a semiconductor laser as claimed in claim 3 or 7 wherein the material of the semiconductor substrate comprises gallium arsenide.
9. A method of fabricating a semiconductor laser as claimed in claim 1 further comprising: and in the process of carrying out induced quantum well intermixing treatment on the region of the quantum well layer close to the front cavity surface, carrying out induced quantum well intermixing treatment on the region of the quantum well layer close to the back cavity surface.
10. A method for fabricating a semiconductor laser as claimed in claim 1 or 9 further comprising: and in the process of carrying out induced quantum well intermixing treatment on the region of the quantum well layer close to the front cavity surface, carrying out induced quantum well intermixing treatment on the edge regions of the quantum well layer on two sides in the slow axis direction.
11. A method of fabricating a semiconductor laser as claimed in claim 1 wherein the thickness of the first sub-upper waveguide layer is less than or equal to 0.35 μm.
12. A method of fabricating a semiconductor laser as claimed in claim 1 further comprising: forming an upper limiting layer on one side of the second sub upper waveguide layer, which faces away from the active layer; and sequentially forming a lower limiting layer and a lower waveguide layer on the semiconductor substrate layer before forming the active layer.
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| US20200244045A1 (en) * | 2017-09-28 | 2020-07-30 | Apple Inc. | Laser Architectures Using Quantum Well Intermixing Techniques |
| CN112072469A (en) * | 2020-08-07 | 2020-12-11 | 西安理工大学 | Semiconductor laser based on quantum well mixed active region and preparation method |
| US20210005786A1 (en) * | 2017-06-01 | 2021-01-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of manufacturing an optoelectronic component |
| CN113783103A (en) * | 2020-05-22 | 2021-12-10 | 深圳市中光工业技术研究院 | Manufacturing method of semiconductor chip and laser |
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| US20210005786A1 (en) * | 2017-06-01 | 2021-01-07 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method of manufacturing an optoelectronic component |
| US20200244045A1 (en) * | 2017-09-28 | 2020-07-30 | Apple Inc. | Laser Architectures Using Quantum Well Intermixing Techniques |
| CN113783103A (en) * | 2020-05-22 | 2021-12-10 | 深圳市中光工业技术研究院 | Manufacturing method of semiconductor chip and laser |
| CN112072469A (en) * | 2020-08-07 | 2020-12-11 | 西安理工大学 | Semiconductor laser based on quantum well mixed active region and preparation method |
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