CN115628657A - Boosting ignition circuit - Google Patents
Boosting ignition circuit Download PDFInfo
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- CN115628657A CN115628657A CN202211301819.2A CN202211301819A CN115628657A CN 115628657 A CN115628657 A CN 115628657A CN 202211301819 A CN202211301819 A CN 202211301819A CN 115628657 A CN115628657 A CN 115628657A
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- nand gate
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42D—BLASTING
- F42D1/00—Blasting methods or apparatus, e.g. loading or tamping
- F42D1/04—Arrangements for ignition
- F42D1/045—Arrangements for electric ignition
- F42D1/05—Electric circuits for blasting
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- General Engineering & Computer Science (AREA)
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Abstract
The invention discloses a boost ignition circuit, which belongs to the technical field of fuzes, and solves the technical problem of high reliability of fuze ignition by a main controller, a sine oscillating circuit, a shaping circuit, a boost circuit and an ignition control circuit.
Description
Technical Field
The invention belongs to the technical field of fuses, and particularly relates to a boosting ignition circuit.
Background
In recent years, the probability of a fuze from ballistic explosion has increased in military use, particularly large caliber artillery that is the mainstay of army and naval fire, such as 155mm grenade and 122mm grenade ammunition and naval 76mm naval cannons. In addition, there are muzzle bombs (e.g., a grenade detonator DQSI, a fairway projectile detonator 25), carry bombs (e.g., a grenade detonator gun 1A), sense bombs (30 kg distributed sub-ammunition detonator), and blind detonator explosive disposal bombs (e.g., a rocket detonator, etc.).
Disclosure of Invention
The invention aims to provide a boosting ignition circuit, which solves the technical problem of high reliability of fuze ignition.
In order to achieve the purpose, the invention adopts the following technical scheme:
a boosting ignition circuit comprises a main controller, a sine oscillation circuit, a shaping circuit, a boosting circuit and an ignition control circuit, wherein the sine oscillation circuit is used for outputting a sine oscillation signal, and the output end of the sine oscillation circuit is connected with the shaping circuit;
the shaping circuit comprises an AND gate U2A, an NAND gate U3C, an NAND gate U3B, an NAND gate U3D and a resistor R13, wherein the second input end of the NAND gate U3A is connected with an IO port of the main controller, the first input end of the NAND gate U3A is connected with a VCC power supply, the output end of the NAND gate U2A is connected with the second input end of the AND gate U2A, the first input end of the AND gate U2A is connected with the output end of the sinusoidal oscillation circuit, the output end of the AND gate U3B is connected with the second input end of the NAND gate U3B, the first input end of the NAND gate U3B is connected with an IO port of the main controller, the output end of the NAND gate U3C is connected with a booster circuit, the second input end of the NAND gate U3C is connected with the first input end of the NAND gate U3B, the second input end of the NAND gate U3C is also connected with a ground wire through the resistor R13, the output ends of the NAND gate U3C are respectively connected with two input ends of the NAND gate U3D, and the output end of the NAND gate U3D is connected with the booster circuit;
the boost circuit is used for boosting the shaping signal output by the shaping circuit, and the output end of the boost circuit outputs a boosted voltage SYDH;
the ignition control circuit comprises a logic circuit and a driving circuit, the logic circuit comprises an AND gate U2C and a NAND gate U5D, a second input end of the AND gate U2C is connected with a second input end of the NAND gate U3A, a first input end of the AND gate U2C is connected with one IO port of the main controller, an output end of the AND gate U5C is connected with a second input end of the NAND gate U5D, a first input end of the NAND gate U5D is connected with a VCC power supply, and an output end of the NAND gate U5D is connected with the driving circuit;
the drive circuit is a triode drive circuit formed by a triode Q2 and a peripheral circuit thereof, the base electrode of the triode Q2 is connected with the output end of the NAND gate U5D, the emitting electrode of the triode Q2 is connected with the output end of the booster circuit, the collecting electrode of the triode Q2 is connected with the ground wire through a resistor R16, the collecting electrode of the triode Q2 is also used for providing ignition voltage for an external ignition resistor, one end of a capacitor C102 is connected with the emitting electrode of the triode Q2, and the other end of the capacitor C102 is connected with the ground wire.
Preferably, the main controller adopts a single chip microcomputer, and the model of the single chip microcomputer is STM32L152CBT6.
Preferably, the sinusoidal oscillation circuit includes a crystal oscillator Y2, a capacitor C32 and a capacitor C33, one end of the crystal oscillator Y2 is connected to the ground through the capacitor C32, the other end is connected to the ground through the capacitor C33, and a connection node between the crystal oscillator Y2 and the capacitor C33 is an output end of the sinusoidal oscillation circuit.
Preferably, the capacitance C32 is 12pf, and the capacitance C33 is 15pf.
Preferably, the model of the and gate U2A is 74HC08, and the models of the nand gate U3A, the nand gate U3C, the nand gate U3B, and the nand gate U3D are all 74HC00.
Preferably, the boost circuit includes a diode D3, a diode D4, a diode D2, a diode D1, a capacitor C5, a capacitor C7, a capacitor C6, a capacitor C8 and a resistor R8, an output end of the nand gate U3B is connected to a cathode of the diode D3 through the capacitor C5, an anode of the diode D3 is connected to an output end of the nand gate U3D, a cathode of the diode D2 is connected to an anode of the diode D3 through the capacitor C7 and a cathode of the diode D3, a cathode of the diode D4 is connected to an anode of the diode D2 through the capacitor C6 and a cathode of the diode D2, a cathode of the diode D1 is connected to an anode of the diode D4 through the capacitor C8 and a cathode of the diode D4, an anode of the diode D1 is connected to one end of the resistor R8, and the other end of the resistor R8 is an output end of the boost circuit.
Preferably, the driving circuit further includes a resistor R11 and a resistor R52, the resistor R11 is connected between the base and the emitter of the transistor Q2, one end of the resistor R52 is connected to the emitter of the transistor Q2, and the other end is connected to the ground.
Preferably, the model of the and gate U2C is 74HC08, and the models of the nand gate U3B, the and gate U3D, the and gate U3C, and the and gate U5D are all 74HC00.
Preferably, the diode D3, the diode D4, the diode D2 and the diode D1 are all 1N4148.
The boosting ignition circuit solves the technical problem of high reliability of fuze ignition, is stable and reliable, ensures safety through double door control, and can be applied to application with smaller ignition current demand.
Drawings
FIG. 1 is a block diagram of the circuit diagram of the present invention;
FIG. 2 is a circuit diagram of a sinusoidal oscillation circuit of the present invention;
FIG. 3 is a circuit diagram of the shaping circuit of the present invention;
FIG. 4 is a circuit diagram of the boost circuit of the present invention;
FIG. 5 is a circuit diagram of the ignition control circuit of the present invention;
fig. 6 is a circuit diagram of the master controller of the present invention.
Detailed Description
The boost ignition circuit shown in fig. 1-6 comprises a main controller, a sine oscillation circuit, a shaping circuit, a boost circuit and an ignition control circuit, wherein the sine oscillation circuit is used for outputting a sine oscillation signal, and the output end of the sine oscillation circuit is connected with the shaping circuit;
the main control unit adopts a single chip microcomputer, and the model number of the single chip microcomputer is STM32L152CBT6.
The sinusoidal oscillation circuit comprises a crystal oscillator Y2, a capacitor C32 and a capacitor C33, one end of the crystal oscillator Y2 is connected with a ground wire through the capacitor C32, the other end of the crystal oscillator Y2 is connected with the ground wire through the capacitor C33, and the connection node of the crystal oscillator Y2 and the capacitor C33 is the output end of the sinusoidal oscillation circuit. The capacitance C32 is 12pf, and the capacitance C33 is 15pf.
In this embodiment, in the sine oscillation circuit, a sine oscillation signal is generated by the crystal oscillator Y2 and output to the shaping circuit for shaping.
The shaping circuit comprises an AND gate U2A, an NAND gate U3C, an NAND gate U3B, an NAND gate U3D and a resistor R13, the second input end of the NAND gate U3A is connected with an IO port (the circuit network number is begin) of a main controller, the first input end is connected with a VCC power supply, the output end is connected with the second input end of the AND gate U2A, the first input end of the AND gate U2A is connected with the output end of the sine oscillation circuit, the output end is connected with the second input end of the NAND gate U3B, the first input end of the NAND gate U3B is connected with an IO port (the circuit network number is synkz) of the main controller, the output end is connected with a booster circuit, the first input end of the NAND gate U3C is connected with the second input end of the NAND gate U3B, the second input end of the NAND gate U3C is connected with the first input end of the NAND gate U3B, the second input end of the NAND gate U3C is also connected with a ground wire through the resistor R13, the output end of the NAND gate U3C is respectively connected with two input ends of the U3D, and the booster circuit is connected with the output end of the NAND gate U3D.
The model of the AND gate U2A is 74HC08, and the models of the NAND gate U3A, the NAND gate U3C, the NAND gate U3B and the NAND gate U3D are all 74HC00.
After the master control controls the nand gate U3A through the begin signal line, a pulse signal is output at pin 3 of U2A, i.e., the output terminal. The first input end of the AND gate U2A, namely the first input end of the AND gate U2A, is connected with a sinusoidal signal output by the crystal oscillator Y2, the sinusoidal signal is shaped into a TTL pulse signal after shaping of the AND gate U2A and the NAND gate U3A, and a logic control circuit consisting of the NAND gate U3B, the NAND gate U3C and the NAND gate U3D outputs a shaping signal to the booster circuit after secondary control.
The first input end of the nand gate U3B is controlled through an IO port of the main controller.
In this embodiment, before the boost circuit, two control signals are needed to enable the shaping circuit to output the shaping signal, and the two control signals are output by the IO port of the main controller, and one control signal controls the second input terminal of the nand gate U3A and the other control signal controls the first input terminal of the nand gate U3B, so that the stability of the boost circuit is ensured.
When the two paths of control signals are high level, the shaping circuit outputs ignition pulse signals through the NAND gate U3B and the NAND gate U3D.
The boost circuit is used for boosting the shaping signal output by the shaping circuit, and the output end of the boost circuit outputs a boosted voltage SYDH.
The booster circuit comprises a diode D3, a diode D4, a diode D2, a diode D1, a capacitor C5, a capacitor C7, a capacitor C6, a capacitor C8 and a resistor R8, the output end of the NAND gate U3B is connected with the cathode of the diode D3 through the capacitor C5, the anode of the diode D3 is connected with the output end of the NAND gate U3D, the cathode of the diode D2 is connected with the anode of the diode D3 through the capacitor C7, the anode of the diode D3 is connected with the cathode of the diode D3, the cathode of the diode D4 is connected with the anode of the diode D2 through the capacitor C6, the anode of the diode D2 is connected with the cathode of the diode D2, the cathode of the diode D1 is connected with the anode of the diode D4 through the capacitor C8, the cathode of the diode D1 is connected with one end of the resistor R8, and the other end of the resistor R8 is the output end of the booster circuit.
The types of the diode D3, the diode D4, the diode D2 and the diode D1 are all 1N4148.
In this embodiment, the diode D3, the diode D4, the diode D2, and the diode D1 constitute a 4-time boosting circuit, which is used for boosting the ignition pulse signal by 4 times, so as to generate a voltage SYDH.
The ignition control circuit comprises a logic circuit and a driving circuit, the logic circuit comprises an AND gate U2C and a NAND gate U5D, a second input end of the AND gate U2C is connected with a second input end of the NAND gate U3A, a first input end of the AND gate U2C is connected with an IO port (the circuit network number in the embodiment is ZIHUI) of the main controller, an output end of the AND gate U5C is connected with a second input end of the NAND gate U5D, a first input end of the NAND gate U5D is connected with a VCC power supply, and an output end of the NAND gate U5D is connected with the driving circuit;
the drive circuit is a triode drive circuit formed by a triode Q2 and a peripheral circuit thereof, the base electrode of the triode Q2 is connected with the output end of the NAND gate U5D, the emitting electrode of the triode Q2 is connected with the output end of the booster circuit, the collecting electrode of the triode Q2 is connected with the ground wire through a resistor R16, the collecting electrode of the triode Q2 is also used for providing ignition voltage for an external ignition resistor, one end of a capacitor C102 is connected with the emitting electrode of the triode Q2, and the other end of the capacitor C102 is connected with the ground wire.
The driving circuit further comprises a resistor R11 and a resistor R52, the resistor R11 is connected between the base electrode and the emitting electrode of the triode Q2, one end of the resistor R52 is connected with the emitting electrode of the triode Q2, and the other end of the resistor R52 is connected with the ground wire.
The model of the and gate U2C is 74HC08, and the models of the nand gate U3B, the and gate U3D, the and gate U3C, and the and gate U5D are all 74HC00.
The main controller sends out control signals begin and ZIHUI to control the conduction of the triode Q2: firstly, the base voltage is controlled to be low level after passing through an AND gate U2C and an NAND gate U5D, at the moment, a triode Q2 is conducted, the voltages on two sides of a boosted C102 are conducted through a collector and an emitter of the Q2, and the voltages on two ends of a collector (circuit network number BXS) of the triode Q2 are connected to an outer-end small-resistance circuit to start ignition.
In this embodiment, the main controller, the sine oscillation circuit, the shaping circuit, the voltage boost circuit and the ignition control circuit are all powered by an external power supply, which may be a battery.
The boosting ignition circuit solves the technical problem of high reliability of fuze ignition, is stable and reliable, ensures safety through double door control, and can be applied to application with smaller ignition current demand.
Claims (9)
1. A boost ignition circuit, characterized by: the device comprises a main controller, a sine oscillation circuit, a shaping circuit, a booster circuit and an ignition control circuit, wherein the sine oscillation circuit is used for outputting a sine oscillation signal, and the output end of the sine oscillation circuit is connected with the shaping circuit;
the shaping circuit comprises an AND gate U2A, an NAND gate U3C, an NAND gate U3B, an NAND gate U3D and a resistor R13, wherein the second input end of the NAND gate U3A is connected with an IO port of the main controller, the first input end of the NAND gate U3A is connected with a VCC power supply, the output end of the NAND gate U2A is connected with the second input end of the AND gate U2A, the first input end of the AND gate U2A is connected with the output end of the sinusoidal oscillation circuit, the output end of the AND gate U3B is connected with the second input end of the NAND gate U3B, the first input end of the NAND gate U3B is connected with an IO port of the main controller, the output end of the NAND gate U3C is connected with a booster circuit, the second input end of the NAND gate U3C is connected with the first input end of the NAND gate U3B, the second input end of the NAND gate U3C is also connected with a ground wire through the resistor R13, the output ends of the NAND gate U3C are respectively connected with two input ends of the NAND gate U3D, and the output end of the NAND gate U3D is connected with the booster circuit;
the booster circuit is used for boosting the shaping signal output by the shaping circuit, and the output end of the booster circuit outputs boosted voltage SYDH;
the ignition control circuit comprises a logic circuit and a driving circuit, the logic circuit comprises an AND gate U2C and an NAND gate U5D, the second input end of the AND gate U2C is connected with the second input end of the NAND gate U3A, the first input end of the AND gate U2C is connected with one IO port of the main controller, the output end of the AND gate U5C is connected with the second input end of the NAND gate U5D, the first input end of the NAND gate U5D is connected with a VCC power supply, and the output end of the NAND gate U5D is connected with the driving circuit;
the drive circuit is a triode drive circuit formed by a triode Q2 and a peripheral circuit thereof, the base electrode of the triode Q2 is connected with the output end of the NAND gate U5D, the emitting electrode of the triode Q2 is connected with the output end of the booster circuit, the collecting electrode of the triode Q2 is connected with the ground wire through a resistor R16, the collecting electrode of the triode Q2 is also used for providing ignition voltage for an external ignition resistor, one end of a capacitor C102 is connected with the emitting electrode of the triode Q2, and the other end of the capacitor C102 is connected with the ground wire.
2. A boost ignition circuit as recited in claim 1, wherein: the main controller adopts a single chip microcomputer, and the model number of the single chip microcomputer is STM32L152CBT6.
3. A boost ignition circuit as recited in claim 1, wherein: the sinusoidal oscillation circuit comprises a crystal oscillator Y2, a capacitor C32 and a capacitor C33, one end of the crystal oscillator Y2 is connected with the ground wire through the capacitor C32, the other end of the crystal oscillator Y2 is connected with the ground wire through the capacitor C33, and the connection node of the crystal oscillator Y2 and the capacitor C33 is the output end of the sinusoidal oscillation circuit.
4. A boost ignition circuit according to claim 3, wherein: the capacitance C32 is 12pf, and the capacitance C33 is 15pf.
5. A boost ignition circuit as recited in claim 1, wherein: the model of the AND gate U2A is 74HC08, and the models of the NAND gate U3A, the NAND gate U3C, the NAND gate U3B and the NAND gate U3D are all 74HC00.
6. A boost ignition circuit as recited in claim 1, wherein: the booster circuit comprises a diode D3, a diode D4, a diode D2, a diode D1, a capacitor C5, a capacitor C7, a capacitor C6, a capacitor C8 and a resistor R8, the output end of the NAND gate U3B is connected with the cathode of the diode D3 through the capacitor C5, the anode of the diode D3 is connected with the output end of the NAND gate U3D, the cathode of the diode D2 is connected with the anode of the diode D3 through the capacitor C7, the anode is connected with the cathode of the diode D3, the cathode of the diode D4 is connected with the anode of the diode D2 through the capacitor C6, the anode is connected with the cathode of the diode D2, the cathode of the diode D1 is connected with the anode of the diode D4 through the capacitor C8, the anode of the diode D1 is connected with one end of the resistor R8, and the other end of the resistor R8 is the output end of the booster circuit.
7. A boost ignition circuit as recited in claim 1, wherein: the driving circuit further comprises a resistor R11, a resistor R52 and a capacitor C102, wherein the resistor R11 is connected between the base electrode and the emitting electrode of the triode Q2, one end of the resistor R52 is connected with the emitting electrode of the triode Q2, the other end of the resistor R52 is connected with the ground wire, and the capacitor C102 is connected with the resistor R52 in parallel.
8. A boost ignition circuit as recited in claim 1, wherein: the model of the AND gate U2C is 74HC08, and the models of the NAND gate U3B, the AND gate U3D, the AND gate U3C and the AND gate U5D are 74HC00.
9. A boost ignition circuit according to claim 6, wherein: the types of the diode D3, the diode D4, the diode D2 and the diode D1 are all 1N4148.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211301819.2A CN115628657A (en) | 2022-10-24 | 2022-10-24 | Boosting ignition circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211301819.2A CN115628657A (en) | 2022-10-24 | 2022-10-24 | Boosting ignition circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115628657A true CN115628657A (en) | 2023-01-20 |
Family
ID=84906489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211301819.2A Pending CN115628657A (en) | 2022-10-24 | 2022-10-24 | Boosting ignition circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115628657A (en) |
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2022
- 2022-10-24 CN CN202211301819.2A patent/CN115628657A/en active Pending
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