CN115627528A - Low-temperature deoxidation method for GaSb substrate and preparation method for HgCdSe epitaxial material - Google Patents
Low-temperature deoxidation method for GaSb substrate and preparation method for HgCdSe epitaxial material Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 121
- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 113
- 238000000034 method Methods 0.000 title claims abstract description 65
- 239000000463 material Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 31
- 238000011282 treatment Methods 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 13
- 238000002128 reflection high energy electron diffraction Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 5
- IPBWGTSZTNICPQ-UHFFFAOYSA-N [Se].[Cd].[Hg] Chemical compound [Se].[Cd].[Hg] IPBWGTSZTNICPQ-UHFFFAOYSA-N 0.000 abstract description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 14
- 239000011669 selenium Substances 0.000 description 6
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000097 high energy electron diffraction Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract
The invention belongs to the technical field of selenium-cadmium-mercury infrared detectors, and provides a substrate low-temperature deoxidation technology and a preparation method of an epitaxial material. The cracked atomic hydrogen or hydrogen plasma is adopted to carry out low-temperature deoxidation treatment on the GaSb substrate, the Sb beam high-temperature deoxidation treatment process adopted in the prior art is replaced, the GaSb substrate for the epitaxial preparation of the HgCdSe material is thoroughly deoxidized under the protection of Sb-free beams, and the pollution of Sb elements to the HgCdSe epitaxial layer is reduced. The deoxidation treatment of the GaSb substrate is carried out under the low-temperature condition, so that the initial temperature of the preparation process of the HgCdSe epitaxial material is greatly reduced, the background impurity concentration of the MBE cavity is favorably reduced, and the electrical property of the HgCdSe epitaxial material is improved.
Description
Technical Field
The invention belongs to the technical field of HgCdSe infrared detectors, and particularly relates to a low-temperature deoxidation process method for a GaSb substrate and a preparation method for a HgCdSe epitaxial material.
Background
Infrared detection as a high-precision technology has important and wide application in numerous fields such as aerospace, environmental monitoring, national defense safety and the like. The selenium cadmium mercury (HgCdSe) is a ternary compound semiconductor material similar to the traditional tellurium cadmium mercury (HgCdTe), and has potential application value in the technical development field of infrared detectors. HgCdSe shares many similarities with HgCdTe materials in terms of basic physical properties: the two can realize the adjustment of the forbidden band width by adjusting the ratio of Cd to Hg, and the band gap adjustment range of the HgCdSe material is 0-1.7 eV; both of them have higher electron mobility and minority carrier lifetime, theoretically, better electrical properties can be obtained. The traditional high-quality HgCdTe material is usually prepared on a tellurium-zinc-cadmium (CdZnTe) substrate matched with the crystal lattice of the HgCdTe material, and the cost of the HgCdTe detector is high because the manufacturing cost of the CdZnTe substrate is extremely high and the crystal rounding production is difficult to realize. However, the HgCdSe material is lattice-matched with a relatively mature gallium antimonide (GaSb) substrate, which is easy to implement wafer batch preparation, and can greatly reduce the manufacturing cost of the infrared detector. At present, the mainstream preparation method of the HgCdSe material is to perform Molecular Beam Epitaxy (MBE) on a GaSb substrate with a (211) crystal face. The preparation method comprises the specific steps of degassing and deoxidizing a GaSb substrate, growing a zinc telluride (ZnTe) buffer layer on the GaSb substrate, and finally growing HgCdSe with different components.
However, there is a native oxide layer on the surface of the GaSb substrate, mainly comprising Ga 2 O 3 And Sb 2 O 3 Before MBE growth, the GaSb substrate surface must be subjected to a deoxidation treatment. The traditional GaSb deoxidation mode is realized by utilizing the decomposition and desorption of oxide on the surface of a substrate at high temperature, namely, the thermal deoxidation (TOD) technology is adopted, and the deoxidation temperature of GaSb is usually higher than 580 ℃. In the thermal deoxidation process, a higher Sb beam current is generally required to protect the surface of the GaSb substrate to prevent the subsequent epitaxial layer lattice defects from greatly rising due to rich metallization of the substrate surface due to GaSb pyrolysis. However, for the HgCdSe material, the high-temperature deoxidation method under the protection of Sb beam current has two disadvantages: firstly, sb element is an effective doping source of the HgCdSe material, and the use of Sb element for protection in the deoxidation process of a GaSb substrate can pollute an MBE growth cavity and influence the HgCdSe materialThe background impurity concentration of the silicon nitride is reduced, so that the electrical performance is reduced; secondly, the deoxidation temperature of the GaSb substrate is usually higher than the growth temperature of the ZnTe buffer layer and the HgCdSe epitaxial layer by more than 250 ℃, and the excessive deoxidation temperature can cause the further increase of the background impurity concentration of the cavity and is not beneficial to the control of the background concentration of the HgCdSe epitaxial layer. Therefore, a scheme is needed to solve the problems in the prior art, and the development of a low-temperature deoxidation technology under the Sb-free protection condition of a GaSb substrate is beneficial to the preparation of HgCdSe epitaxial materials.
Therefore, there is a need to provide a technical solution to solve the above technical problems in the prior art.
Disclosure of Invention
The invention provides a technology for low-temperature deoxidation of a GaSb substrate and a preparation method of a HgCdSe epitaxial material, which can at least solve part of problems in the prior art.
A process method for low-temperature deoxidation of a GaSb substrate is characterized by comprising the following steps:
s1: heating the GaSb substrate;
s2: deoxidizing the surface of the GaSb substrate by using cracked atomic hydrogen or hydrogen plasma;
s3: cooling the GaSb substrate;
s4: observing and detecting the deoxidized GaSb substrate;
s5: if the deoxidation treatment of the GaSb substrate is complete, the subsequent process can be carried out.
As a preferred scheme of the process method for low-temperature deoxidation of the GaSb substrate, the process method comprises the following steps: in the step S1, the heating temperature of the GaSb substrate is 400-450 ℃.
As a preferred scheme of the process method for low-temperature deoxidation of the GaSb substrate, the process method comprises the following steps: and in the step S3, the temperature of the GaSb substrate is reduced to be below 200 ℃.
As a preferred scheme of the process method for low-temperature deoxidation of the GaSb substrate, the process method comprises the following steps: and in the step S4, the observation and detection mode is to adopt a reflection high-energy electron diffraction device to observe whether clear reconstruction stripes appear on the surface of the GaSb substrate.
As a preferred scheme of the process method for low-temperature deoxidation of the GaSb substrate, the process method comprises the following steps: in step S5, if the deoxidation treatment of the GaSb substrate is incomplete, the steps S1 to S4 are repeated until the GaSb substrate is completely deoxidized.
In order to solve the above technical problem, according to another aspect of the present invention, the present invention provides the following technical solutions:
a preparation method of HgCdSe epitaxial material is characterized by comprising the following steps: the method comprises the following steps:
s6: heating the GaSb substrate deoxidized at low temperature by adopting the process method in a growth cavity of a molecular beam epitaxy system, and keeping for a certain time;
s7: growing a buffer layer on the GaSb substrate;
s8: cooling the substrate, and growing Hg with required thickness on the basis of the buffer layer 1～x Cd x And (3) Se epitaxial material.
The preferable scheme of the preparation method of the HgCdSe epitaxial material is as follows: the GaSb substrate is deoxidized at low temperature by adopting the process method in a pretreatment cavity of a molecular beam epitaxy system.
As a preferred scheme of the preparation method of the HgCdSe epitaxial material, the preparation method comprises the following steps: in the step S6, the heating temperature of the GaSb substrate is 310-330 ℃, and the holding time is 3-5 min.
As a preferred scheme of the preparation method of the HgCdSe epitaxial material, the preparation method comprises the following steps: the thickness of the buffer layer in step S7 is 200-300 nm.
The preferable scheme of the preparation method of the HgCdSe epitaxial material is as follows: and in the step S7, the buffer layer is ZnTe telluride.
The preferable scheme of the preparation method of the HgCdSe epitaxial material is as follows: in the step S8, the temperature is reduced to 60-130 ℃, hg 1～x Cd x The range of Cd component x in the Se epitaxial material is 0.18-0.37.
The invention has the following beneficial effects:
1. because the GaSb substrate is deoxidized in the environment of cracked atomic hydrogen or hydrogen plasma, the high-temperature Sb beam deoxidization of the GaSb substrate in the prior art is avoided, the GaSb substrate for the epitaxial preparation of the HgCdSe material is thoroughly deoxidized without the protection of Sb beams, and the pollution of Sb elements to the HgCdSe epitaxial layer is reduced.
2. The method can realize deoxidation treatment of the GaSb substrate under the condition of low temperature, so that the initial temperature of the preparation process of the HgCdSe epitaxial material is greatly reduced, the background impurity concentration of an MBE cavity is favorably reduced, and the electrical performance of the HgCdSe epitaxial material is improved.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the embodiments or technical solutions of the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a typical RHEED diffraction reconstruction pattern during the deoxidation process of a GaSb substrate according to the present invention;
FIG. 2 is the Atomic Force Microscope (AFM) morphology of the 300nm buffer layer grown on the deoxidized GaSb substrate.
The implementation, functional features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, back, 8230; etc.) are involved in the embodiment of the present invention, the directional indications are only used for explaining the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the figure), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a low-temperature deoxidation method for a GaSb substrate and a preparation method for an HgCdSe epitaxial material, which can realize that the GaSb substrate is thoroughly deoxidized under the protection of Sb-free beam, reduce the pollution of Sb elements to the HgCdSe epitaxial layer, and greatly reduce the initial temperature of the preparation process of the HgCdSe epitaxial material, thereby being beneficial to reducing the background impurity concentration of an MBE cavity and improving the electrical property of the HgCdSe epitaxial material.
A process method for low-temperature deoxidation of a GaSb substrate comprises the following steps:
loading the GaSb substrate into a pretreatment cavity of a Molecular Beam Epitaxy (MBE) system, and heating the GaSb substrate at the temperature of 400-450 ℃;
deoxidizing the surface of the GaSb substrate by adopting cracked atomic hydrogen or hydrogen plasma;
cooling the GaSb substrate to below 200 ℃;
conveying the GaSb substrate to a growth cavity of an MBE system, and observing and detecting the deoxidized GaSb substrate in a way of adopting a reflection high-energy electron diffraction (RHEED) device to observe whether clear reconstructed stripes appear on the surface of the GaSb substrate;
if the deoxidation treatment of the GaSb substrate is complete, clear reconstructed stripes appear in a reflected high-energy electron diffraction image of the GaSb substrate, a subsequent deposition process can be carried out, otherwise, the sample is returned to the MBE pretreatment cavity, and the steps of loading into the pretreatment cavity, heating, deoxidation treatment, cooling and sending into the growth cavity for detection are repeated until the GaSb substrate is completely deoxidized;
heating the GaSb substrate subjected to the low-temperature deoxidation to 310-330 ℃, and keeping the temperature for 3-5 min;
growing a ZnTe buffer layer of zinc telluride on a GaSb substrate, wherein the thickness of the ZnTe buffer layer is 200-300 nm;
cooling the substrate to 60-130 deg.C, growing Hg with the thickness required by the device on the basis of the buffer layer 1～ x Cd x Se epitaxial material, hg 1～x Cd x The range of Cd component x in the Se epitaxial material is 0.18-0.37.
The invention provides a hydrogen-assisted deoxidation method for deoxidizing a GaSb substrate and then carrying out HgCdSe epitaxial growth. The deoxidation process of the GaSb substrate is carried out in a pretreatment cavity independent of an MBE growth cavity, so that the possibility that Sb elements pollute the MBE growth cavity is thoroughly avoided. The hydrogen-assisted deoxidation is to apply cracked atomic hydrogen or hydrogen plasma on the surface of the GaSb substrate, and to react with Ga on the surface of the GaSb by the hydrogen atom or the hydrogen plasma 2 O 3 And Sb 2 O 3 The reaction is carried out, ga atoms and Sb atoms in the oxide are reduced, the Ga atoms and the Sb atoms are combined to form GaSb through the re-reaction under the action of high temperature, and a byproduct H of the reaction 2 And O, the gas is pumped away by a vacuum pump of the pretreatment cavity.
Example 1
A process method for low-temperature deoxidation of a GaSb substrate comprises the following steps:
loading the GaSb substrate into a pretreatment cavity of a Molecular Beam Epitaxy (MBE) system, and heating the GaSb substrate at 400 ℃;
deoxidizing the surface of the GaSb substrate by adopting cracked atomic hydrogen or hydrogen plasma;
cooling the GaSb substrate to 200 ℃;
conveying the GaSb substrate to a growth cavity of an MBE system, and observing and detecting the deoxidized GaSb substrate in a way of adopting a reflection high-energy electron diffraction (RHEED) device to observe whether clear reconstructed stripes appear on the surface of the GaSb substrate;
if the deoxidation treatment of the GaSb substrate is complete, a subsequent deposition process can be carried out, otherwise, the sample is returned to the MBE pretreatment cavity, and the steps of loading the sample into the pretreatment cavity, heating, deoxidation treatment, cooling and conveying the sample into the growth cavity for detection are repeated until the GaSb substrate is completely deoxidized.
Wherein, the cracked atomic hydrogen or hydrogen plasma used in the deoxidation treatment process can be prepared by the prior art in the field.
Example 2
A process method for low-temperature deoxidation of a GaSb substrate comprises the following steps:
loading the GaSb substrate into a pretreatment cavity of a Molecular Beam Epitaxy (MBE) system, and heating the GaSb substrate at 450 ℃;
deoxidizing the surface of the GaSb substrate by adopting cracked atomic hydrogen or hydrogen plasma;
cooling the GaSb substrate to 200 ℃;
conveying the GaSb substrate to a growth cavity of an MBE system, and observing and detecting the deoxidized GaSb substrate in a way of adopting a reflection high-energy electron diffraction (RHEED) device to observe whether clear reconstructed stripes appear on the surface of the GaSb substrate;
if the deoxidation treatment of the GaSb substrate is complete, a subsequent deposition process can be carried out, otherwise, the sample is returned to the MBE pretreatment cavity, and the steps of loading the sample into the pretreatment cavity, heating, deoxidation treatment, cooling and detection in the growth cavity are repeated until the GaSb substrate is completely deoxidized.
Wherein, the cracked atomic hydrogen or hydrogen plasma used in the deoxidation treatment process can be prepared by the prior art in the field.
Fig. 1 shows a RHEED diffraction reconstructed image of the GaSb substrate after deoxidation treatment in example 2, and it can be seen from fig. 1 that a clear reconstruction stripe appears on the substrate surface after deoxidation treatment of the GaSb substrate, which indicates that the oxide layer on the substrate surface has been completely removed after the GaSb substrate is treated by cracked atomic hydrogen or hydrogen plasma, thereby realizing deoxidation treatment of the substrate.
Example 3
A preparation method of HgCdSe epitaxial material comprises the following steps:
heating the low-temperature deoxidized GaSb substrate obtained in the example 1 to 310 ℃ and keeping the temperature for 3min;
growing a ZnTe buffer layer of zinc telluride on a GaSb substrate, wherein the thickness of the ZnTe buffer layer is 200nm;
cooling the substrate to 60 ℃, and growing Hg with the thickness required by the device on the basis of the buffer layer 1～x Cd x And (3) Se epitaxial material.
Example 4
A preparation method of HgCdSe epitaxial material comprises the following steps:
heating the low-temperature deoxidized GaSb substrate obtained in example 2 to 330 ℃ and keeping for 5min;
growing a ZnTe zinc telluride buffer layer on a GaSb substrate, wherein the thickness of the ZnTe buffer layer is 300nm;
cooling the substrate to 130 deg.C, and growing Hg with the thickness required by the device on the basis of the buffer layer 1～x Cd x And (3) Se epitaxial material.
Fig. 2 is a morphology diagram of the 300nm ZnTe buffer layer deposited on the GaSb substrate and detected by an atomic force microscope in example 4, and it can be seen from the figure that after the cracked atomic hydrogen or hydrogen plasma treated GaSb substrate deposits the buffer layer, the obtained buffer layer film has low roughness and good film uniformity.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the present specification and directly/indirectly applied to other related technical fields within the spirit of the present invention are included in the scope of the present invention.
Claims (10)
1. A process method for low-temperature deoxidation of a GaSb substrate is characterized by comprising the following steps of:
s1: heating the GaSb substrate;
s2: deoxidizing the surface of the GaSb substrate by using cracked atomic hydrogen or hydrogen plasma;
s3: cooling the GaSb substrate;
s4: observing and detecting the GaSb substrate;
s5: if the deoxidation treatment of the GaSb substrate is complete, the subsequent process can be carried out.
2. The process method for low-temperature deoxidation of the GaSb substrate according to claim 1, wherein the heating temperature of the GaSb substrate in the step S1 is 400-450 ℃.
3. The process method for low-temperature deoxidation of the GaSb substrate according to claim 1, wherein in step S3 the temperature of the GaSb substrate is reduced to below 200 ℃.
4. The process method for low-temperature deoxidation of the GaSb substrate according to claim 1, wherein in the step S4, the detection mode is to use a reflection high-energy electron diffraction device to observe whether clear reconstructed stripes appear on the surface of the GaSb substrate.
5. The process method for low-temperature deoxidation of GaSb substrate as claimed in claim 1 wherein in step S5, if the deoxidation treatment of the GaSb substrate is incomplete, the steps S1-S4 are repeated until the GaSb substrate is completely deoxidized.
6. A preparation method of HgCdSe epitaxial material is characterized by comprising the following steps: the method comprises the following steps:
s6: heating the GaSb substrate deoxidized at low temperature by the process method of any one of claims 1 to 5 in a growth cavity of a molecular beam epitaxy system, and keeping for a certain time;
s7: growing a buffer layer on the GaSb substrate;
s8: cooling the substrate, and growing Hg with required thickness on the basis of the buffer layer 1～x Cd x And (3) Se epitaxial material.
7. The method of claim 6, wherein the GaSb substrate is deoxidized at low temperature by the process method of any one of claims 1 to 5 in a pretreatment chamber of a molecular beam epitaxy system.
8. The method of claim 6, wherein the heating temperature of the GaSb substrate in the step S6 is 310-330 ℃ and the holding time is 3-5 min.
9. The method of claim 6, wherein the buffer layer in step S7 has a thickness of 200-300 nm.
10. The method for preparing HgCdSe epitaxial material as claimed in claim 6, wherein the temperature is reduced to 60-130 ℃ in step S8, and Hg is Hg 1～x Cd x The range of Cd component x in the Se epitaxial material is 0.18-0.37.
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