CN115621688A - Silicon-based MEMS filter - Google Patents
Silicon-based MEMS filter Download PDFInfo
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- CN115621688A CN115621688A CN202211248575.6A CN202211248575A CN115621688A CN 115621688 A CN115621688 A CN 115621688A CN 202211248575 A CN202211248575 A CN 202211248575A CN 115621688 A CN115621688 A CN 115621688A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
The invention provides a silicon-based MEMS filter, comprising: an N-order filter, a first U-shaped coupling line, a second U-shaped coupling line, an input feeder line and an output feeder line are arranged in a first area on the upper surface of the first silicon substrate; one end of the N-order filter is connected with one side of the first U-shaped coupling line, and the other side of the first U-shaped coupling line is connected with the input feeder line; the other end of the N-order filter is connected with one side of a second U-shaped coupling line, and the other side of the second U-shaped coupling line is connected with an output feeder line; the first suppression resonance rod and the second suppression resonance rod are arranged in a second area of the upper surface of the second silicon substrate, the first suppression resonance rod is vertically located right above the first U-shaped coupling line, the second suppression resonance rod is vertically located right above the second U-shaped coupling line, and the opening directions of the first U-shaped coupling line and the second U-shaped coupling line are respectively the length directions of the first suppression resonance rod and the second suppression resonance rod. The silicon-based MEMS filter provided by the invention has a higher rectangular coefficient.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a silicon-based MEMS filter.
Background
With the rapid development of wireless communication systems, the frequency spectrum and the space resources of the systems are also very tight, and the filter as an essential frequency selection device in a microwave system has higher requirements on the rectangular coefficient and the size of the filter.
The filter can pass the electric signals of a certain section of frequency, and block the electric signals of other frequencies, so that the key design difficulty of the filter is the improvement of the rectangular coefficient of the filter and the reduction of the size of the filter. The MEMS process is a micro-machining process for manufacturing three-dimensional structures such as metal patterns, through holes and the like on high-resistance silicon, and the machining precision can reach the micro-nano level. The silicon-based filter processed by the MEMS process has the advantages of small volume, light weight, high consistency, easy integration and the like, and the product application based on the MEMS filter plays an important role in future communication systems.
At present, the product suppression degree is usually improved by increasing the order of the filter, but the size of the filter is increased and the rectangular coefficient is increased, so how to improve the rectangular coefficient on the basis of miniaturization products becomes a technical problem to be solved at present.
Disclosure of Invention
The embodiment of the invention provides a silicon-based MEMS filter, which aims to solve the problem that the rectangular coefficient of the existing miniaturized filter is low.
In a first aspect, an embodiment of the present invention provides a silicon-based MEMS filter, including:
the first silicon substrate is provided with an N-order filter, a first U-shaped coupling line, a second U-shaped coupling line, an input feeder line and an output feeder line in a first area on the upper surface of the first silicon substrate; one end of the N-order filter is connected with one side of the first U-shaped coupling line, and the other side of the first U-shaped coupling line is connected with the input feeder line; the other end of the N-order filter is connected with one side of a second U-shaped coupling line, and the other side of the second U-shaped coupling line is connected with an output feeder line; a first metal layer is arranged on the upper surface of the first silicon substrate and avoids the first area; one end of each resonance rod in the N-order filter is connected with the first metal layer;
the second silicon substrate is positioned on the upper surface of the first silicon substrate, a first restraining resonance rod and a second restraining resonance rod are arranged in a second area of the upper surface of the second silicon substrate, the first restraining resonance rod is vertically positioned right above the first U-shaped coupling line, the second restraining resonance rod is vertically positioned right above the second U-shaped coupling line, and the opening directions of the first U-shaped coupling line and the second U-shaped coupling line are respectively the length directions of the first restraining resonance rod and the second restraining resonance rod; a second metal layer is arranged on the upper surface of the second silicon substrate and avoids the second area; one end of each of the first restraining resonance rod and the second restraining resonance rod is connected with the second metal layer.
In one possible implementation, the width of the first suppression resonance bar is equal to the sum of the width of the first U-shaped coupling line and the interval of the first U-shaped coupling line; the width of the second resonance suppression rod is equal to the sum of the width of the second U-shaped coupling line and the interval of the second U-shaped coupling line.
In one possible implementation manner, the nth order filter includes N resonant rods, and the N resonant rods are connected with each other through a coupling line;
the N-order filter also comprises a first coupling line, wherein the first resonance rod or the last resonance rod in the N-order filter is connected with one end of the first coupling line, the other end of the first coupling line is connected with the first U-shaped coupling line or the second U-shaped coupling line, and the first coupling line and the resonance rod connected with the first coupling line form inductive coupling.
In one possible implementation manner, the nth order filter includes N resonant rods, and the N resonant rods are connected with each other through a coupling line;
the N-order filter further comprises a second coupling line, the first resonance rod or the last resonance rod in the N-order filter is arranged at an interval with one end of the second coupling line, the other end of the second coupling line is connected with the first U-shaped coupling line or the second U-shaped coupling line, and the second coupling line and the resonance rod arranged at an interval with the second coupling line form capacitive coupling.
In one possible implementation manner, the nth order filter includes N resonant rods, and the N resonant rods are connected with each other through a coupling line;
the N-order filter also comprises a first coupling line and a second coupling line, wherein a first resonance rod in the N-order filter is connected with the first coupling line, the first coupling line is connected with the first U-shaped coupling line, and the first coupling line and the first resonance rod connected with the first coupling line form inductive coupling; the last resonance rod in the N-order filter is arranged at an interval with one end of the second coupling line, the other end of the second coupling line is connected with the second U-shaped coupling line, and the second coupling line and the last resonance rod arranged at an interval form capacitive coupling.
In one possible implementation, the first coupling line is a Z-shaped coupling line;
the second coupling line is composed of a plurality of sections of coupling lines, wherein the second coupling line at least comprises a section of coupling line parallel to the resonance rod.
In one possible implementation, each resonant rod in the nth order filter is a single-ended short-circuited 1/4 wavelength resonator.
In one possible implementation, the first and second restraining resonance rods are both single-ended short-circuited 1/4 wavelength resonators.
In a possible implementation manner, metalized through holes are uniformly distributed on the metal layer of the first silicon substrate and the metal layer of the second silicon substrate, and metal is uniformly distributed on all regions of the lower surface of the first silicon substrate.
In one possible implementation, the first silicon substrate has a thickness smaller than that of the second silicon substrate, and both the first silicon substrate and the second silicon substrate are high-resistance silicon substrates.
The embodiment of the invention provides a silicon-based MEMS filter, which is characterized in that a filter with a non-resonant node structure is prepared on a double-layer silicon substrate by adopting an MEMS process, namely a first U-shaped coupling line and a second U-shaped coupling line are arranged on a first silicon substrate, and a first restraining resonance rod and a second restraining resonance rod which correspond to the first U-shaped coupling line and the second U-shaped coupling line are prepared at corresponding positions on a second silicon substrate, so that the first U-shaped coupling line, the first restraining resonance rod, the second U-shaped coupling line and the second restraining resonance rod form two transmission zero points outside a passband of an N-order filter, and the rectangular coefficient of the filter is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of an overall structure of a silicon-based MEMS filter provided by an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an upper surface of the first silicon substrate in fig. 1 according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a lower surface of the first silicon substrate in fig. 1 according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an upper surface of the second silicon substrate in fig. 1 according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
At present, the product rejection degree is improved mainly by increasing the order of the filter, but the volume of the filter is increased and the loss is increased. The introduction of the transmission zero point can realize higher suppression degree on the basis of keeping smaller volume. However, although the introduction of transmission zero points in the filter can also be realized by introducing the cross-coupling structure at present, the cross-coupling structure has low design flexibility and is complex in structural design.
In order to solve the problems in the prior art, the embodiment of the invention provides a silicon-based MEMS filter. The following describes a silicon-based MEMS filter provided by an embodiment of the present invention.
A silicon-based MEMS filter includes a first silicon substrate and a second silicon substrate stacked together. An N-order filter, a first U-shaped coupling line, a second U-shaped coupling line, an input feeder line and an output feeder line are arranged in a first area of the upper surface of the first silicon substrate. One end of the N-order filter is connected with one side of the first U-shaped coupling line, and the other side of the first U-shaped coupling line is connected with the input feeder line. The other end of the N-order filter is connected with one side of a second U-shaped coupling line, and the other side of the second U-shaped coupling line is connected with an output feeder line. A first metal layer is arranged on the upper surface of the first silicon substrate and avoids the first area; one end of each resonance rod in the Nth order filter is connected with the first metal layer.
And the second silicon substrate is positioned on the upper surface of the first silicon substrate. And a first restraining resonance rod and a second restraining resonance rod are arranged in a second area of the upper surface of the second silicon substrate, the first restraining resonance rod is vertically positioned right above the first U-shaped coupling line, and the second restraining resonance rod is vertically positioned right above the second U-shaped coupling line. Wherein, the opening direction of first U type coupled line and second U type coupled line is the length direction of first suppression resonance pole and second suppression resonance pole respectively. And a second metal layer is disposed on the upper surface of the second silicon substrate and avoids the second region. One end of each of the first suppression resonance rod and the second suppression resonance rod is connected with the second metal layer.
The N-order filter is prepared on the double-layer high-resistance silicon by adopting an MEMS (micro electro mechanical system) process.
A non-resonant node formed by a first U-shaped coupling line, a first suppression resonant rod, a second U-shaped coupling line and a second suppression resonant rod is added in the N-order filter, so that a transmission zero point is generated by cascade connection of the non-resonant node, and the suppression performance of the filter and the rectangular coefficient of the filter are improved. The silicon-based MEMS filter containing the non-resonant nodes can flexibly realize the positions of the zero points and the multi-zero-point characteristic, and can effectively improve the suppression degree of the filter. The performance of the filter is further improved on the basis of the miniaturized filter, and the higher requirements on the filter in future communication are met.
In some embodiments, the widths of the first U-shaped coupling line and the first restraining resonance bar, and the widths of the second U-shaped coupling line and the second restraining resonance bar can be adjusted to achieve a better restraining effect.
In this embodiment, the width of the first resonance suppression bar may be equal to the sum of the width of the first U-coupled line and the interval of the first U-coupled line. The width of the second resonance suppression rod is equal to the sum of the width of the second U-shaped coupling line and the interval of the second U-shaped coupling line.
Illustratively, the line width of either side of the first U-shaped coupled line may be set to be 1/3 of the width of the first resonance suppression bar, and the interval of the first U-shaped coupled line may also be 1/3 of the width of the first resonance suppression bar, so that the width of the first resonance suppression bar is equal to the sum of the width of the first U-shaped coupled line and the interval of the first U-shaped coupled line. Accordingly, the line width of either side of the second U-shaped coupled line may be set to 1/3 of the width of the second debounce bar, and the interval of the second U-shaped coupled line may also be 1/3 of the width of the second debounce bar, such that the width of the second debounce bar is equal to the sum of the width of the second U-shaped coupled line and the interval of the second U-shaped coupled line.
In this embodiment, in order to adjust the zero-point suppression degree, the lengths and positions of the first U-shaped coupled line and the second U-shaped coupled line are independently tuned, and the zero-point suppression degree is adjusted by controlling the coupling strengths with the first suppression resonance rod and the second suppression resonance rod.
In some embodiments, in order to realize different feeding strengths and phases, make the filter have good in-band standing waves, obtain good loss and suppression, and further reduce the size of the filter, an inductive coupling structure can be added in the nth order filter.
In this embodiment, the nth order filter may include N resonant rods, and the N resonant rods are connected to each other through a coupling line. In order to improve the suppression and reduce the size of the filter, the first resonant rod or the last resonant rod of the Nth order filter is connected with one end of a first coupling line to form inductive coupling. The other end of the first coupling line is connected with the first U-shaped coupling line or the second U-shaped coupling line.
Illustratively, the first coupled lines may be provided as zigzag-shaped coupled lines.
In some embodiments, in order to realize different feeding strengths and phases, make the filter have good in-band standing waves, obtain good loss and suppression, and further reduce the size of the filter, a structure of capacitive coupling can be added in the nth order filter.
In this embodiment, the nth order filter may include N resonant rods, and the N resonant rods are connected to each other through a coupling line. In order to improve the suppression and reduce the size of the filter, a first resonance rod or a last resonance rod of the Nth order filter is arranged at an interval with one end of a second coupling line, the other end of the second coupling line is connected with a first U-shaped coupling line or a second U-shaped coupling line, and the second coupling line and the resonance rod arranged at an interval with the second coupling line form capacitive coupling.
Illustratively, the second coupled line is composed of a plurality of segments of coupled lines, wherein the second coupled line includes at least one segment of coupled line parallel to the resonant rod.
In some embodiments, in order to achieve different feeding strengths and phases, to provide a filter with good in-band standing waves, to obtain good loss and rejection, and to further reduce the size of the filter, both inductive coupling and capacitive coupling can be added to the nth order filter.
In this embodiment, the nth order filter may include N resonant rods, and the N resonant rods are connected to each other through a coupling line. In order to improve suppression and reduce the size of the filter, an inductive coupling is provided at one end of the nth order filter and a capacitive coupling is provided at the other end of the nth order filter.
Illustratively, a first resonant rod in the nth order filter is connected to a first coupling line, the first coupling line is connected to a first U-shaped coupling line, and the first coupling line and the first resonant rod connected thereto form an inductive coupling. The last resonance rod in the N-order filter is arranged at an interval with one end of the second coupling line, the other end of the second coupling line is connected with the second U-shaped coupling line, and the second coupling line and the last resonance rod arranged at an interval form capacitive coupling.
In some embodiments, the inter-resonator coupling may be adjusted by adjusting the position of a coupling line connecting between the N resonant rods in order to obtain good loss and suppression.
In this embodiment, each resonant rod in the nth order filter is a single-ended short-circuited 1/4 wavelength resonator.
In order to adjust the passband frequency of the N-order filter, the lengths of the resonant rods in the N-order filter are independent from each other, and the passband frequency of the N-order filter can be adjusted by adjusting the length of each resonant rod.
In some embodiments, the first and second antiresonant bars are both single-ended short-circuited 1/4 wavelength resonators. The position of the transmission zero point can be flexibly adjusted by adjusting the length of the transmission zero point.
For example, the length of the first suppression resonator bar may be greater than the length of the second suppression resonator bar.
In some embodiments, in order to ensure good shielding characteristics, a grounding metal is provided entirely on the lower surface of the first silicon substrate. Metalized through holes are uniformly distributed on the metal layer of the first silicon substrate and the metal layer of the second silicon substrate. And the metalized through holes on the metal layer of the first silicon substrate penetrate through the upper surface and the lower surface of the first silicon substrate, and the metalized through holes on the metal layer of the second silicon substrate penetrate through the upper surface and the lower surface of the second silicon substrate. The location of the metallized through holes on the upper and lower surfaces of the two silicon substrates is not limited.
In some embodiments, in order to increase the capacitance of the filter and further reduce the volume of the filter, the thickness of the first silicon substrate may be smaller than that of the second silicon substrate, and both the first silicon substrate and the second silicon substrate are high-resistance silicon substrates.
In some embodiments, for convenience of input and output, grooves may be provided on the second silicon substrate at positions corresponding to the input and output feed lines to expose the input and output feed lines.
According to the silicon-based MEMS filter provided by the invention, a filter with a non-resonant node structure is prepared on a double-layer high-resistance silicon substrate by adopting an MEMS process, namely, a first U-shaped coupling line and a second U-shaped coupling line are arranged on a first silicon substrate, and a first restraining resonance rod and a second restraining resonance rod corresponding to the first U-shaped coupling line and the second U-shaped coupling line are prepared at corresponding positions on a second silicon substrate, so that the first U-shaped coupling line, the first restraining resonance rod, the second U-shaped coupling line and the second restraining resonance rod are out of a passband of an N-order filter to form two transmission zeros, and the rectangular coefficient of the filter is improved.
Referring to fig. 1-4, a schematic diagram of a silicon-based MEMS filter is provided. The silicon-based MEMS filter comprises a first silicon substrate 10 and a second silicon substrate 20. The thickness of the first silicon substrate 10 is 0.12mm and the thickness of the second silicon substrate 20 is 0.25mm.
As shown in fig. 2, a second order filter, a first U-shaped coupled line 111, a second U-shaped coupled line 112, an input feed line 113, and an output feed line 114 are provided in the first region 110 of the first silicon substrate 10.
The second-order filter includes 2 single-end short-circuited 1/4-wavelength resonators, 115 and 116 in fig. 2 are 2 single-end short-circuited 1/4-wavelength resonators, and the other ends of the 2 resonators are connected to the first metal layer of the first silicon substrate 10. The first metal layer is disposed on the upper surface of the first silicon substrate 10, and the first metal layer is uniformly disposed in the other regions except the first region 110, so as to achieve good shielding. A coupling line 117 is connected between the two single-ended short-circuited 1/4 wavelength resonators, and the coupling between the resonators is adjusted by adjusting the position of the coupling line 117.
In order to improve the performance of the filter and to reduce the volume of the filter, Z-coupling lines 118 may be connected to the resonators 115. The resonator 115 and the Z-coupling line 118 form an inductive coupling, and the coupling strength can be adjusted by adjusting the position of the contact point of the resonator 115 and the Z-coupling line 118.
In addition, the resonator 116 and the second coupling line 119 form a capacitive impedance, and the length of the second coupling line 119 and the gap between the resonator 116 and the second coupling line 119 may adjust the coupling strength. The second coupling line 119 is formed of 4-segment broken lines, and the broken line forming the capacitive impedance with the resonator 116 is parallel to the resonator 116.
The input feed 113 and the output feed 114 are both 50 ohm transmission lines.
The first metal layer on the upper surface of the first silicon substrate 10 is further provided with a metalized through hole penetrating through the upper and lower surfaces, which is not shown in fig. 2, and refer to fig. 1. The blank area in the first region 10 in fig. 2 is made of high-resistance silicon, and the second-order filter, the first U-shaped coupled line 111, the second U-shaped coupled line 112, the input feed line 113 and the output feed line 114 in the first region 10 are made of high-resistance silicon in the first region 10. Outside the first region 10 is a first metal layer.
As shown in fig. 3, the grounding metal is uniformly distributed on the lower surface of the first silicon substrate 10, ensuring good shielding characteristics.
As shown in fig. 4, a first resonance suppression bar 210 and a second resonance suppression bar 211 are provided in a second region 213 of the upper surface of the second silicon substrate 20. Two grooves 212 are formed in the second silicon substrate 20 at positions corresponding to the input feed lines 113 and the output feed lines 114, so that the input feed lines 113 and the output feed lines 114 on the first silicon substrate 10 can be exposed on the outer surface for easy connection.
The first and second antiresonant rods 210 and 211 are respectively located vertically above the first and second U-coupled lines 111 and 112. The opening directions of the first U-shaped coupled line 111 and the second U-shaped coupled line 112 are the length directions of the first restraining resonance bar and the second restraining resonance bar, respectively. The first and second suppressor resonator rods 210 and 211 are both single-ended short circuited 1/4 wavelength resonators. The position of the transmission zero point can be flexibly adjusted by adjusting the length of the transmission zero point. The line width of either side of the first U-shaped coupled line 111 is set to be 1/3 of the width of the first restraining resonance bar 210, and the interval of the first U-shaped coupled line 111 is also 1/3 of the width of the first restraining resonance bar 210, so that the width of the first restraining resonance bar 210 is equal to the sum of the width of the first U-shaped coupled line 111 and the interval of the first U-shaped coupled line 111. Accordingly, the line width of either side of the second U-shaped coupled line 112 is set to 1/3 of the width of the second resonance bar 211, and the interval of the second U-shaped coupled line 112 is also 1/3 of the width of the second resonance bar 211, so that the width of the second resonance bar 211 is equal to the sum of the width of the second U-shaped coupled line 112 and the interval of the second U-shaped coupled line 112. The length of the first resonant bar 210 can be greater than the length of the second resonant bar 211.
The first suppressor resonant bar 210 and the first U-coupled line 111, the second suppressor resonant bar 211 and the second U-coupled line 112 form two sets of non-resonant nodes.
A microwave input signal is fed through an input feed line 113, passes through the first U-shaped coupling line 111, and reaches the Z-shaped coupling line 118, the resonator 115, the resonator 116, and the second coupling line 119, and the resonator 115 and the resonator 116 form a second-order filter and provide a transmission characteristic for a signal in a pass band frequency and an attenuation characteristic in a stop band. Then passes through a second U-shaped coupling line 112 and finally transmits the signal in the passband frequency through an output feeder line 114. The first and second rejection resonance bars 210 and 211 are respectively positioned in the vertical direction of the first and second U-shaped coupled lines 111 and 112, and generate a transmission zero point out of the band, thereby improving the rectangular coefficient.
The multi-zero silicon-based MEMS filter containing the non-resonant node (NRN) structure provided by the invention adopts an MEMS process to realize a filter with a non-resonant node on double-layer high-resistance silicon. The main transmission circuit is between the first silicon substrate 10 and the second silicon substrate 20, has good shielding properties, and is easy to integrate. The first silicon substrate 10 of the bottom layer is made of thin silicon, so that the capacitance can be increased and the size can be further reduced. The suppression resonance rods on the second silicon substrate 20 add two transmission zeros outside the passband, improving the rectangular coefficient of the filter. Therefore, the filter has the advantages of small size, high rectangular coefficient, good shielding property and easy integration.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A silicon-based MEMS filter, comprising:
the first silicon substrate is provided with an N-order filter, a first U-shaped coupling line, a second U-shaped coupling line, an input feeder line and an output feeder line in a first area on the upper surface of the first silicon substrate; one end of the N-order filter is connected with one side of a first U-shaped coupling line, and the other side of the first U-shaped coupling line is connected with an input feeder line; the other end of the N-order filter is connected with one side of a second U-shaped coupling line, and the other side of the second U-shaped coupling line is connected with an output feeder line; a first metal layer is arranged on the upper surface of the first silicon substrate and avoids the first area; one end of each resonance rod in the N-order filter is connected with the first metal layer;
a second silicon substrate located on the upper surface of the first silicon substrate, wherein a first restraining resonance rod and a second restraining resonance rod are arranged in a second region of the upper surface of the second silicon substrate, the first restraining resonance rod is vertically located right above the first U-shaped coupling line, the second restraining resonance rod is vertically located right above the second U-shaped coupling line, and the opening directions of the first U-shaped coupling line and the second U-shaped coupling line are respectively the length directions of the first restraining resonance rod and the second restraining resonance rod; a second metal layer is arranged on the upper surface of the second silicon substrate and avoids the second area; and one ends of the first suppression resonance rod and the second suppression resonance rod are connected with the second metal layer.
2. A silicon-based MEMS filter as defined in claim 1 wherein said first suppression resonating bar has a width equal to the sum of the width of said first U-shaped coupled line and the spacing of said first U-shaped coupled line; the width of the second restraining resonance bar is equal to the sum of the width of the second U-shaped coupling line and the interval of the second U-shaped coupling line.
3. A silicon-based MEMS filter according to claim 1 or 2 wherein the N-th order filter comprises N resonant rods, and the N resonant rods are connected by coupling lines;
the N-order filter further comprises a first coupling line, a first resonance rod or a last resonance rod in the N-order filter is connected with one end of the first coupling line, the other end of the first coupling line is connected with the first U-shaped coupling line or the second U-shaped coupling line, and the first coupling line and the resonance rod connected with the first coupling line form inductive coupling.
4. A silicon-based MEMS filter according to claim 1 or 2 wherein the N-th order filter comprises N resonant rods, and the N resonant rods are connected by coupling lines;
the N-order filter further comprises a second coupling line, a first resonance rod or a last resonance rod in the N-order filter is arranged at an interval with one end of the second coupling line, the other end of the second coupling line is connected with the first U-shaped coupling line or the second U-shaped coupling line, and the second coupling line and the resonance rods arranged at intervals form capacitive coupling.
5. The silicon-based MEMS filter of claim 2, wherein the nth order filter comprises N resonant rods, and the N resonant rods are connected by coupling lines;
the Nth order filter further comprises a first coupling line and a second coupling line, a first resonant rod in the Nth order filter is connected with the first coupling line, the first coupling line is connected with the first U-shaped coupling line, and the first coupling line and the first resonant rod connected with the first coupling line form inductive coupling; the last resonance rod in the N-order filter and one end of the second coupling line are arranged at intervals, the other end of the second coupling line is connected with the second U-shaped coupling line, and the second coupling line and the last resonance rod arranged at intervals form capacitive coupling.
6. A silicon-based MEMS filter as claimed in claim 5 wherein the first coupled lines are Z-shaped coupled lines;
the second coupling line is composed of a plurality of sections of coupling lines, wherein the second coupling line at least comprises a section of coupling line parallel to the resonant rod.
7. A silicon-based MEMS filter as defined in claim 2 wherein each resonating bar in the nth order filter is a single-ended, short-circuited 1/4 wavelength resonator.
8. The silicon-based MEMS filter of claim 7, wherein the first and second rejection resonant rods are single-ended short-circuited 1/4 wavelength resonators.
9. The silicon-based MEMS filter of claim 1, wherein the metal layer of the first silicon substrate and the metal layer of the second silicon substrate have metalized through holes formed therein, and wherein the first silicon substrate has metal formed on all areas of the lower surface thereof.
10. A silicon-based MEMS filter as defined by claim 1 wherein the first silicon substrate has a thickness less than the thickness of the second silicon substrate, both the first silicon substrate and the second silicon substrate being high-resistance silicon substrates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211248575.6A CN115621688A (en) | 2022-10-12 | 2022-10-12 | Silicon-based MEMS filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211248575.6A CN115621688A (en) | 2022-10-12 | 2022-10-12 | Silicon-based MEMS filter |
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| CN115621688A true CN115621688A (en) | 2023-01-17 |
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| CN202211248575.6A Pending CN115621688A (en) | 2022-10-12 | 2022-10-12 | Silicon-based MEMS filter |
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- 2022-10-12 CN CN202211248575.6A patent/CN115621688A/en active Pending
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