CN115621374A - Repairing method for MicroLED array substrate and display panel - Google Patents
Repairing method for MicroLED array substrate and display panel Download PDFInfo
- Publication number
- CN115621374A CN115621374A CN202211194202.5A CN202211194202A CN115621374A CN 115621374 A CN115621374 A CN 115621374A CN 202211194202 A CN202211194202 A CN 202211194202A CN 115621374 A CN115621374 A CN 115621374A
- Authority
- CN
- China
- Prior art keywords
- led chip
- photoresist
- abnormal
- bonding metal
- led chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000002159 abnormal effect Effects 0.000 claims abstract description 133
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 230000005856 abnormality Effects 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims description 2
- 238000007711 solidification Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 19
- 230000006870 function Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Led Devices (AREA)
Abstract
The application discloses a repairing method of a MicroLED array substrate and a display panel, wherein the repairing method comprises the following steps: determining abnormal LED chips existing on the driving substrate, wherein the abnormal LED chips are LED chips with abnormality in the plurality of LED chips; coating photoresist on one surface, provided with the LED chips, of the driving substrate so that the photoresist covers all the LED chips; removing a part of the photoresist at the abnormal LED chip to expose an epitaxial layer of the abnormal LED chip and a part of the electrode; removing the exposed part of the abnormal LED chip; removing all the photoresist at the abnormal LED chip to expose two bonding metal layers corresponding to the abnormal LED chip; bonding two electrodes of a new LED chip with the bonding region of the exposed bonding metal layer respectively; and removing all the photoresist on the driving substrate. Based on the mode, damage to the MicroLED array substrate caused by repairing can be reduced or eliminated.
Description
Technical Field
The application relates to the technical field of display, in particular to a repairing method of a micro LED array substrate and a display panel.
Background
In the prior art, a laser is usually used to remove an abnormal LED chip on a driving substrate in a micro LED array substrate, and then a new LED chip is mounted at a mounting position of the abnormal LED chip to complete the repair.
The prior art has the defect that the laser needs to be a high-energy laser for breaking the abnormal LED chip, and when the abnormal LED chip is broken by the high-energy laser, the driving substrate is easily damaged by the high-energy laser, for example, a bonding metal on the driving substrate is damaged, so that the conventional repairing method causes a large damage to the micro LED array substrate.
Disclosure of Invention
The technical problem that this application mainly solved is how to reduce or eliminate the damage of repairing to the micro LED array substrate.
In order to solve the above technical problem, the first technical solution adopted by the present application is: a repairing method of a MicroLED array substrate comprises the following steps that the MicroLED array substrate comprises a driving substrate, a plurality of bonding metal layers and a plurality of LED chips are arranged on the driving substrate, and the bonding metal layers are bonded with electrodes of the corresponding LED chips; after the bonding metal layer is bonded with the corresponding electrode, the bonding metal layer is provided with a bondable area capable of being bonded with other electrodes; the repairing method comprises the following steps: determining abnormal LED chips existing on the driving substrate, wherein the abnormal LED chips are LED chips with abnormality in the plurality of LED chips; coating photoresist on one surface, provided with the LED chips, of the driving substrate so that the photoresist covers all the LED chips; removing part of the photoresist at the abnormal LED chip to expose the epitaxial layer and a part of the electrode of the abnormal LED chip; removing the exposed part of the abnormal LED chip; removing all the photoresist at the abnormal LED chip to expose two bonding metal layers corresponding to the abnormal LED chip; bonding two electrodes of a new LED chip with the bondable area of the exposed bonding metal layer respectively; and removing all the photoresist on the driving substrate.
The width of a bonding metal layer in the horizontal direction is at least twice of the width of an electrode, and the horizontal direction is parallel to one surface, provided with the bonding metal layer, of the driving substrate.
The plurality of LED chips are arranged on the driving substrate based on a mass transfer method.
The method for removing part of photoresist at the abnormal LED chip comprises the following steps: and exposing and developing the photoresist at the abnormal LED chip to remove part of the photoresist at the abnormal LED chip.
Wherein, removing all photoresists at the abnormal LED chip comprises: and exposing and developing the photoresist at the abnormal LED chip to remove all the photoresist at the abnormal LED chip.
Wherein, get rid of the exposed part of unusual LED chip, include: and etching the exposed part of the abnormal LED chip.
Wherein, etching the exposed part of the abnormal LED chip comprises: and etching the exposed part of the abnormal LED chip by using acid liquor.
Wherein, removing all the photoresist on the driving substrate comprises: and removing all the photoresist on the driving substrate by using photoresist stripping liquid.
Wherein, two electrodes of the new LED chip are respectively bonded with the bondable area of the exposed bonding metal layer, and the bonding method comprises the following steps: and heating and melting the exposed bonding metal layer, respectively inserting two electrodes of the new LED chip into the heating and melting bonding metal layer, and waiting for the cooling and solidification of the bonding metal layer.
In order to solve the above technical problem, the second technical solution adopted by the present application is: a display panel comprises a driving chip and a MicroLED array substrate which is repaired based on the repairing method.
The beneficial effect of this application lies in: different from the prior art, in the technical scheme of the application, photoresist is coated on one surface of the driving substrate, on which the plurality of LED chips are arranged, and covers all the LED chips, part of the photoresist at the abnormal LED chips is removed to expose the epitaxial layers and part of the electrodes of the abnormal LED chips, the exposed parts of the abnormal LED chips are removed, all the photoresist at the abnormal LED chips is removed to expose two bonding metal layers corresponding to the abnormal LED chips, all the electrodes of the new LED chips are respectively connected with one exposed bonding metal layer, and all the photoresist on the driving substrate is removed. Based on the mode, the photoresist at the abnormal LED chip is prevented from being damaged by the photoresist removing operation, and under the condition that the epitaxial layer of the abnormal LED chip and part of electrodes of the epitaxial layer are exposed and other devices on the driving substrate are covered by the photoresist, the exposed part of the abnormal LED chip can be removed by adopting any type of LED chip removing mode which can not remove the photoresist, the abnormal LED chip is prevented from being removed by adopting a mode of breaking the LED chip by laser, the micro LED array substrate is prevented from being damaged by the laser, and the damage of repairing to the micro LED array substrate is reduced or eliminated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of a MicroLED array substrate according to the present application;
FIG. 2 is a schematic flow chart illustrating an embodiment of a repairing method for a MicroLED array substrate according to the present disclosure;
FIG. 3 is a schematic diagram of step S11 in the repairing method of the MicroLED array substrate according to the present application;
fig. 4 is a schematic diagram of step S12 in the repairing method of the micro led array substrate according to the present application;
fig. 5 is a schematic diagram of step S13 in the repairing method of the micro led array substrate according to the present application;
fig. 6 is a schematic diagram of step S14 in the repairing method of the micro led array substrate according to the present application;
fig. 7 is a schematic diagram of step S15 in the repairing method of the micro led array substrate according to the present application;
fig. 8 is a schematic diagram of step S16 in the repairing method of the micro led array substrate according to the present application;
fig. 9 is a schematic diagram of step S17 in the repairing method of the micro led array substrate according to the present application;
FIG. 10 is a schematic view of an embodiment of the repair device of the present application;
fig. 11 is a schematic structural diagram of an embodiment of a display panel according to the present application.
Reference numerals: the LED display device comprises a driving substrate 10, a bonding metal layer 11, an LED chip 12, an electrode 121, an epitaxial layer 122, photoresist 13, a repairing device 20, a processing module 21, a coating module 22, a first removing module 23, a second removing module 24, a third removing module 25, a bonding module 26, a fourth removing module 27, a display panel 30, a driving chip 31 and an array substrate 32.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be noted that the following examples are only illustrative of the present application, and do not limit the scope of the present application. Likewise, the following examples are only some examples and not all examples of the present application, and all other examples obtained by a person of ordinary skill in the art without any inventive step are within the scope of the present application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Throughout the description of the present application, it is intended that the terms "mounted," "disposed," "connected," and "connected" be construed broadly and encompass, for example, fixed connections, removable connections, or integral connections unless expressly stated or limited otherwise; can be mechanically connected or electrically connected; they may be directly connected or may be connected via an intermediate medium. To one of ordinary skill in the art, the foregoing may be connected in specific instances to the specific meaning ascribed to the application.
The application firstly discloses a repairing method of a micro led array substrate, and referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of an embodiment of the micro led array substrate, and fig. 2 is a schematic flow diagram of the embodiment of the repairing method of the micro led array substrate.
As shown in fig. 1, the micro LED array substrate includes a driving substrate 10, a plurality of bonding metal layers 11 and a plurality of LED chips 12 are disposed on the driving substrate 10, the bonding metal layers 11 are bonded to one electrode 121 of the corresponding LED chip 12, and each bonding metal layer 11 has a bondable area a capable of being bonded to another electrode 121 after being bonded to the corresponding electrode 121.
As shown in fig. 2, the repairing method of the micro led array substrate includes:
step S11: the abnormal LED chip X existing on the driving substrate 10 is determined.
The abnormal LED chip X is an LED chip 12 having an abnormality among the plurality of LED chips 12.
Referring to fig. 3, fig. 3 is a schematic diagram of step S11 in the repairing method of the micro LED array substrate according to the present application, and as shown in fig. 3, after a batch of LED chips 12 is transferred from growth to a driving substrate 10 by bulk transfer, or after the LED chips 12 on the driving substrate 10 are used for a long time, or in the case that a plurality of LED chips 12 exist on other driving substrates 10, each LED chip 12 on the driving substrate 10 may be detected to be turned on, so as to determine an LED chip 12 with abnormal or non-light emission among the plurality of LED chips 12 as an abnormal LED chip X.
The abnormal LED chip X is likely to cause a defect on a picture of the micro LED array substrate, and therefore the abnormal LED chip X needs to be processed to replace the new normal LED chip 12 with the abnormal LED chip X, so as to complete the repair of the micro LED array substrate.
Step S12: a photoresist 13 is applied to the surface of the driving substrate 10 on which the LED chips 12 are provided so that the photoresist 13 covers all the LED chips 12.
Referring to fig. 4, fig. 4 is a schematic diagram of step S12 in the repairing method of the micro LED array substrate of the present application, and as shown in fig. 4, after it is determined that an abnormal LED chip X exists in the plurality of LED chips 12 disposed on the driving substrate 10, a photoresist 13 may be coated on one side surface of the driving substrate 10 on which the plurality of LED chips 12 are disposed, so that the coated photoresist 13 forms a glue layer covering all the LED chips 12 (including the abnormal LED chip X).
Step S13: a portion of the photoresist 13 at the abnormal LED chip X is removed to expose a portion of the epitaxial layer 122 and the electrode 121 of the abnormal LED chip X.
Referring to fig. 5, fig. 5 is a schematic diagram of step S13 in the repairing method for the micro LED array substrate according to the present application, and as shown in fig. 5, any type of removal method corresponding to the applied photoresist may be adopted to partially remove the photoresist at a position corresponding to the abnormal LED chip X in the photoresist layer formed by the photoresist 13, so that only the epitaxial layer 122 of the abnormal LED chip X and the electrode 121 of a part thereof are exposed outside the photoresist 13, and the electrode 121 of another part of the abnormal LED chip X is still located in the photoresist 13.
Step S14: and removing the exposed part of the abnormal LED chip X.
Referring to fig. 6, fig. 6 is a schematic diagram of step S14 in the repairing method for the micro LED array substrate according to the present application, and as shown in fig. 6, any type of method that cannot cause loss to the photoresist 13, or a method that only causes very little loss to the photoresist 13 and cannot cause loss to an object covered by the photoresist 13, may be used to remove the exposed portion of the abnormal LED chip X, that is, remove the epitaxial layer 122 exposed outside the abnormal LED chip X and the electrode 121 exposed outside the abnormal LED chip X.
Due to the protection of the photoresist 13, other normal LED chips 12, the bonding metal layer 11 and the driving substrate 10 are not damaged in the process of removing the exposed part of the abnormal LED chip X.
Step S15: all the photoresist 13 at the abnormal LED chip X is removed to expose the two bonding metal layers 11 corresponding to the abnormal LED chip X.
Referring to fig. 7, fig. 7 is a schematic diagram of step S15 in the repairing method of the micro LED array substrate in the present application, and as shown in fig. 7, a removal method corresponding to the applied photoresist may be adopted to completely remove the photoresist at a position corresponding to the abnormal LED chip X in the glue layer formed by the photoresist 13, so as to expose only the electrode 121 of the other remaining portion of the abnormal LED chip X and the bonding metal layer 11 corresponding thereto.
Step S16: the two electrodes 121 of the new LED chip 12 are bonded to the bondable area a of the exposed one bonding metal layer 11, respectively.
Referring to fig. 8, fig. 8 is a schematic diagram of step S16 in the repairing method of the micro LED array substrate in the present application, as shown in fig. 8, after step S15, two bonding metal layers 11 bonded to an abnormal LED chip X are exposed, a corresponding bondable area a is reserved on each exposed bonding metal layer 11, and two electrodes of a new LED chip 12 are respectively bonded to one bondable area a, so that the new LED chip 12 is replaced with the abnormal LED chip X.
Based on the protection of the photoresist 13, in the process of bonding two electrodes of the new LED chip 12 with one of the bondable areas a, the other bonding metal layers 11 in the photoresist 13 are not damaged, so as to avoid abnormal bonding of other normal LED chips 12.
Step S17: the photoresist 13 on the driving substrate 10 is entirely removed.
Referring to fig. 9, fig. 9 is a schematic view of step S17 in the repairing method of the micro LED array substrate of the present application, and as shown in fig. 9, after the replacement of the new LED chip 12 and the abnormal LED chip X is completed, the remaining photoresist 13 on the driving substrate 10 may be removed, so that the repaired micro LED array substrate is obtained.
Based on the mode, the abnormal LED chip X and the new LED chip 12 can be removed in the process of coating and gradually removing the photoresist, so that the damage to the normal LED chip 12 and related objects caused by the repairing operation in the process can be avoided as much as possible, the reliability of the repairing method is improved, and the damage to the MicroLED array substrate caused by repairing is reduced or eliminated.
Different from the prior art, in the technical scheme of the application, photoresist is coated on one surface of the driving substrate, on which the plurality of LED chips are arranged, and covers all the LED chips, part of the photoresist at the abnormal LED chips is removed to expose the epitaxial layers and part of the electrodes of the abnormal LED chips, the exposed parts of the abnormal LED chips are removed, all the photoresist at the abnormal LED chips is removed to expose two bonding metal layers corresponding to the abnormal LED chips, all the electrodes of the new LED chips are respectively connected with one exposed bonding metal layer, and all the photoresist on the driving substrate is removed. Based on the mode, the photoresist at the abnormal LED chip is prevented from being damaged by the photoresist removing operation, and under the condition that the epitaxial layer of the abnormal LED chip and part of electrodes of the epitaxial layer are exposed and other devices on the driving substrate are covered by the photoresist, the exposed part of the abnormal LED chip can be removed by adopting any type of LED chip removing mode which can not remove the photoresist, the abnormal LED chip is prevented from being removed by adopting a mode of breaking the LED chip by laser, the micro LED array substrate is prevented from being damaged by the laser, and the damage of repairing to the micro LED array substrate is reduced or eliminated.
In one embodiment, as shown in fig. 1, a width of a bonding metal layer 11 in a horizontal direction D1 is at least twice a width of an electrode 121, and the horizontal direction D1 is parallel to a surface of the driving substrate 10 on which the bonding metal layer 11 is disposed.
Specifically, as shown in fig. 1, the horizontal direction D1 may be a direction parallel to the width direction of the bonding metal layer 11, the width of the bonding metal layer 11 is at least twice the width of the electrode 121 in the horizontal direction D1, and in each bonding metal layer 11, a region other than a region where the electrode 121 is bonded to the bonding metal layer 11 is the bondable region a.
Based on the above, making the width of the bonding metal layer 11 at least twice the width of the electrode 121 in the horizontal direction D1, and arranging the bonding position of the electrode 121 on the bonding metal layer 11 reasonably, a region having a certain area enough for the electrode 121 to bond can exist on the bondable region a.
Alternatively, the area of the entire region of bonding metal layer 11 available for bonding is at least twice the area required for bonding electrode 121 on bonding metal layer 11.
In one embodiment, the plurality of LED chips 12 are LED chips 12 disposed on the driving substrate 10 based on a bulk transfer method.
Specifically, the bulk transfer method may be any bulk transfer method suitable for the corresponding LED chip 12, and may be determined according to actual requirements, and is not limited herein.
The LED chip 12 may be a micro LED, and may also be other types of light emitting devices, which may be determined according to actual needs, and is not limited herein.
In one embodiment, step S13 may include:
the photoresist 13 at the abnormal LED chip X is exposed and developed to remove a portion of the photoresist 13 at the abnormal LED chip X.
Specifically, the exposure and development technique may be used to remove the portion of the photoresist 13 at the abnormal LED chip X, and other types of photoresist removal techniques may also be used to remove the portion of the photoresist 13, which is not limited herein.
In one embodiment, step S15 may include:
and exposing and developing the photoresist at the abnormal LED chip X to remove all the photoresist at the abnormal LED chip X.
Specifically, the exposure and development technique may be used to remove all the photoresist 13 remaining at the abnormal LED chip X, and other types of photoresist removal techniques may also be used to remove the above-mentioned part of the photoresist 13, which is not limited herein.
In one embodiment, step S14 may include:
and etching the exposed part of the abnormal LED chip X.
Specifically, the etching operation may be performed using any liquid that cannot react with the photoresist 13 and can etch the epitaxial layer 122 of the abnormal LED chip X and the exposed electrode 121 thereof.
Based on the mode, the situation that the exposed part of the abnormal LED chip X is removed in a laser smashing mode can be avoided, further damage to the MicroLED array substrate caused by laser is avoided, the part of the abnormal LED chip X, which is exposed out of the photoresist 13, is subjected to targeted etching based on the etching liquid, the part of the MicroLED array substrate, which is exposed out of the abnormal LED chip X, is damaged, and damage to the MicroLED array substrate caused by repairing is further reduced or eliminated.
Optionally, etching the exposed portion of the abnormal LED chip X may specifically include:
and etching the exposed part of the abnormal LED chip X by using acid liquor.
Specifically, an acid solution capable of etching the epitaxial layer 122 and part of the electrode 121 of the abnormal LED chip X may be used to etch the epitaxial layer 122 and part of the electrode 121 exposed by the abnormal LED chip X, and the acid solution does not etch the photoresist 13, so that the other LED chips 12 in the photoresist 13 are not affected by the acid solution, and damage to the micro LED array substrate caused by repair is reduced.
In an embodiment, step S17 may specifically include:
the photoresist 13 on the driving substrate 10 is entirely removed using a photoresist stripper.
Specifically, after the replacement of the abnormal LED chip X and the new LED chip 12 is completed, the photoresist stripping liquid is used to remove all the remaining photoresist 13 on the driving substrate 10, and the repairing process of the entire micro LED array substrate is completed.
In an embodiment, step S16 may specifically include:
heating and melting the exposed bonding metal layer 11, respectively inserting the two electrodes 121 of the new LED chip 12 into a heating and melting bonding metal layer 11, and waiting for the bonding metal layer 11 to cool and solidify.
Specifically, the bonding metal layer 11 may be a metal layer constructed by a metal such as indium In or tin Sn by an evaporation method, and when an electrode 121 needs to be bonded to the bonding metal layer 11, the metal on the bonding metal layer 11 may be heated and melted, and then the electrode 121 is inserted into the melted bonding metal layer 11, and after the temperature of the bonding metal layer 11 is lowered and cooled and solidified, the bonding between the electrode 121 and the corresponding bonding metal layer 11 may be completed.
The application further provides a repairing device of the micro LED array substrate, as shown in fig. 1, the micro LED array substrate includes a driving substrate 10, a plurality of bonding metal layers 11 and a plurality of LED chips 12 are disposed on the driving substrate 10, the bonding metal layers 11 are bonded to one electrode 121 of the corresponding LED chip 12, and each bonding metal layer 11 has a bondable area a capable of being bonded to another electrode 121 after being bonded to the corresponding electrode 121.
Referring to fig. 10, fig. 10 is a schematic structural diagram of an embodiment of the repairing apparatus of the present application, and as shown in fig. 10, the repairing apparatus 20 includes a processing module 21, a coating module 22, a first removing module 23, a second removing module 24, a third removing module 25, a bonding module 26, and a fourth removing module 27.
The processing module 21 is configured to determine an abnormal LED chip existing on the driving substrate, where the abnormal LED chip is an abnormal LED chip among the plurality of LED chips.
The coating module 22 is used for coating photoresist on one surface of the driving substrate on which the LED chips are disposed, so that the photoresist covers all the LED chips.
The first removing module 23 is used for removing the photoresist at the abnormal LED chip to expose a portion of the epitaxial layer and the electrode of the abnormal LED chip.
The second removing module 24 is used for removing the exposed part of the abnormal LED chip.
The third removing module 25 is configured to remove the photoresist at the abnormal LED chip, so that the two bonding metal layers corresponding to the abnormal LED chip are exposed.
The bonding module 26 is used for bonding two electrodes of the new LED chip with bondable areas of an exposed bonding metal layer.
The fourth removal module 27 is used to remove all the photoresist on the driving substrate.
The method is characterized in that photoresist is coated on one surface of a driving substrate, on which a plurality of LED chips are arranged, and the photoresist covers all the LED chips, part of the photoresist at the abnormal LED chips is removed to expose the epitaxial layers and part of electrodes of the abnormal LED chips, the exposed parts of the abnormal LED chips are removed, all the photoresist at the abnormal LED chips is removed to expose two bonding metal layers corresponding to the abnormal LED chips, each electrode of a new LED chip is connected with one exposed bonding metal layer, and all the photoresist on the driving substrate is removed. Based on the mode, the photoresist at the abnormal LED chip is prevented from being damaged by the photoresist removing operation, and under the condition that the epitaxial layer of the abnormal LED chip and part of electrodes of the epitaxial layer are exposed and other devices on the driving substrate are covered by the photoresist, the exposed part of the abnormal LED chip can be removed by adopting any type of LED chip removing mode which can not remove the photoresist, the abnormal LED chip is prevented from being removed by adopting a mode of breaking the LED chip by laser, the micro LED array substrate is prevented from being damaged by the laser, and the damage of repairing to the micro LED array substrate is reduced or eliminated.
Referring to fig. 11, fig. 11 is a schematic structural diagram of a display panel of the present application, in which a display panel 30 includes a driving chip 31 and an array substrate 32, and the array substrate 32 is a micro led array substrate repaired by the repairing method described in any of the embodiments above.
As shown in fig. 9, in the micro LED array substrate repaired by the repairing method according to any of the embodiments, the removed part of the electrode of the abnormal LED chip X remains on the bonding metal layer 11 of the replaced LED chip, and the electrode of the new LED chip 12 is disposed on the bonding metal layer 11 except for the area occupied by the part of the electrode.
Different from the prior art, in the technical scheme of the application, photoresist is coated on one surface of the driving substrate, on which the plurality of LED chips are arranged, and covers all the LED chips, part of the photoresist at the abnormal LED chips is removed to expose the epitaxial layers and part of the electrodes of the abnormal LED chips, the exposed parts of the abnormal LED chips are removed, all the photoresist at the abnormal LED chips is removed to expose two bonding metal layers corresponding to the abnormal LED chips, all the electrodes of the new LED chips are respectively connected with one exposed bonding metal layer, and all the photoresist on the driving substrate is removed. Based on the mode, the photoresist at the abnormal LED chip can be prevented from being damaged by the photoresist removing operation, under the condition that the epitaxial layer of the abnormal LED chip and part of electrodes of the epitaxial layer are exposed and other devices on the driving substrate are covered by the photoresist, the exposed part of the abnormal LED chip can be removed by adopting an LED chip removing mode which can not remove the photoresist in any type, the abnormal LED chip is prevented from being removed by adopting a mode of breaking the LED chip by laser, the micro LED array substrate is prevented from being damaged by the laser, and the damage of repairing to the micro LED array substrate is reduced or eliminated.
In the description of the present application, reference to the description of the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present application includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
The logic and/or steps represented in the flowcharts or otherwise described herein, such as an ordered listing of executable instructions that can be viewed as implementing logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device (e.g., a personal computer, server, network device, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions). For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (10)
1. The repairing method of the MicroLED array substrate is characterized in that the MicroLED array substrate comprises a driving substrate, wherein a plurality of bonding metal layers and a plurality of LED chips are arranged on the driving substrate, and the bonding metal layers are bonded with electrodes of the corresponding LED chips; after the bonding metal layer is bonded with the corresponding electrode, the bonding metal layer is provided with a bondable area capable of being bonded with other electrodes;
the repairing method comprises the following steps:
determining abnormal LED chips existing on the driving substrate, wherein the abnormal LED chips are LED chips with abnormality in the plurality of LED chips;
coating photoresist on one surface, provided with the LED chips, of the driving substrate so that the photoresist covers all the LED chips;
removing part of the photoresist at the abnormal LED chip to expose the epitaxial layer of the abnormal LED chip and part of the electrode;
removing the exposed part of the abnormal LED chip;
removing all the photoresist at the abnormal LED chip to expose two bonding metal layers corresponding to the abnormal LED chip;
bonding two electrodes of a new LED chip with the bondable area of the exposed bonding metal layer respectively;
and removing all the photoresist on the driving substrate.
2. The repair method of claim 1, wherein a width of one of the bonding metal layers is at least twice a width of one of the electrodes in a horizontal direction, the horizontal direction being parallel to a face of the driving substrate on which the bonding metal layer is provided.
3. The repair method according to claim 1 or 2, wherein the plurality of LED chips are LED chips disposed on the driving substrate based on a bulk transfer method.
4. The repair method according to claim 1 or 2, wherein the removing of the portion of the photoresist at the abnormal LED chip comprises:
and exposing and developing the photoresist at the abnormal LED chip to remove part of the photoresist at the abnormal LED chip.
5. The repair method according to claim 1 or 2, wherein the removing all the photoresist at the abnormal LED chip comprises:
and exposing and developing the photoresist at the abnormal LED chip to remove all the photoresist at the abnormal LED chip.
6. The repair method according to claim 1 or 2, wherein the removing of the exposed portion of the abnormal LED chip comprises:
and etching the exposed part of the abnormal LED chip.
7. The repair method according to claim 6, wherein the etching of the exposed portion of the abnormal LED chip comprises:
and etching the exposed part of the abnormal LED chip by adopting acid liquor.
8. The repair method of claim 1 or 2, wherein the removing all of the photoresist on the driving substrate comprises:
and removing all the photoresist on the driving substrate by using photoresist stripping liquid.
9. The repairing method according to claim 1 or 2, wherein said bonding two electrodes of the new LED chip to the bondable area of the exposed one of the bonding metal layers respectively comprises:
heating and melting the exposed bonding metal layer, respectively inserting two electrodes of a new LED chip into the heating and melting bonding metal layer, and waiting for the cooling and solidification of the bonding metal layer.
10. A display panel, comprising a driving chip and a micro led array substrate repaired by the repairing method of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211194202.5A CN115621374B (en) | 2022-09-28 | 2022-09-28 | Repair method of micro LED array substrate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211194202.5A CN115621374B (en) | 2022-09-28 | 2022-09-28 | Repair method of micro LED array substrate and display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115621374A true CN115621374A (en) | 2023-01-17 |
| CN115621374B CN115621374B (en) | 2023-10-20 |
Family
ID=84860338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211194202.5A Active CN115621374B (en) | 2022-09-28 | 2022-09-28 | Repair method of micro LED array substrate and display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115621374B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116230723A (en) * | 2023-05-09 | 2023-06-06 | 惠科股份有限公司 | Display panel, display device and repairing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047785A (en) * | 2019-04-24 | 2019-07-23 | 京东方科技集团股份有限公司 | Micro LED flood tide transfer method and its encapsulating structure, display device |
| CN110400762A (en) * | 2019-07-05 | 2019-11-01 | 深圳市华星光电技术有限公司 | Foreign matter method for repairing and mending, device and storage medium |
| KR20210063200A (en) * | 2019-11-21 | 2021-06-01 | 참엔지니어링(주) | Apparatus and method for repairing micro LED display |
| KR20210091640A (en) * | 2020-01-14 | 2021-07-22 | 삼성전자주식회사 | Method of manufacturing display apparatus, display apparatus, and structure for manufacturing display apparatus |
| CN113327530A (en) * | 2021-05-27 | 2021-08-31 | 武汉天马微电子有限公司 | Display panel, repairing method thereof and display device |
| US20220082893A1 (en) * | 2020-09-16 | 2022-03-17 | HKC Corporation Limited | Display panel, display device and repairing method of display panel |
-
2022
- 2022-09-28 CN CN202211194202.5A patent/CN115621374B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110047785A (en) * | 2019-04-24 | 2019-07-23 | 京东方科技集团股份有限公司 | Micro LED flood tide transfer method and its encapsulating structure, display device |
| CN110400762A (en) * | 2019-07-05 | 2019-11-01 | 深圳市华星光电技术有限公司 | Foreign matter method for repairing and mending, device and storage medium |
| KR20210063200A (en) * | 2019-11-21 | 2021-06-01 | 참엔지니어링(주) | Apparatus and method for repairing micro LED display |
| KR20210091640A (en) * | 2020-01-14 | 2021-07-22 | 삼성전자주식회사 | Method of manufacturing display apparatus, display apparatus, and structure for manufacturing display apparatus |
| US20220082893A1 (en) * | 2020-09-16 | 2022-03-17 | HKC Corporation Limited | Display panel, display device and repairing method of display panel |
| CN113327530A (en) * | 2021-05-27 | 2021-08-31 | 武汉天马微电子有限公司 | Display panel, repairing method thereof and display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116230723A (en) * | 2023-05-09 | 2023-06-06 | 惠科股份有限公司 | Display panel, display device and repairing method thereof |
| US12107206B1 (en) | 2023-05-09 | 2024-10-01 | HKC Corporation Limited | Display panel, display device and repair method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115621374B (en) | 2023-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7129418B2 (en) | Suspension board with circuit and producing method thereof | |
| CN100423277C (en) | Manufacturing method of semiconductor wafer having lid part and manufacturing method of semiconductor device | |
| US8824150B2 (en) | Driving printed circuit board and liquid crystal display device including the same | |
| JP2005222058A (en) | Manufacturing system for liquid crystal display device and manufacturing method utilizing the same | |
| CN115621374A (en) | Repairing method for MicroLED array substrate and display panel | |
| CN111370541A (en) | Micro-LED chip dead pixel repairing method | |
| JP2005010775A (en) | Liquid crystal display device and method of fabricating same | |
| JPH1172807A (en) | Production of reflection type liquid crystal display device | |
| JPH06333980A (en) | Printed circuit board and its connection | |
| KR20220099490A (en) | Array substrate, manufacturing method thereof, and display device | |
| US7369293B2 (en) | Mounting case for electro-optical device, electro-optical device and electronic apparatus | |
| US20220336426A1 (en) | Driving substrate, light emitting device and manufacturing method thereof | |
| US10459295B2 (en) | Stretched display panel and manufacturing method therefor | |
| JPH11295747A (en) | Liquid crystal display device and its manufacture | |
| JP2002287662A (en) | Active matrix substrate and method of manufacturing for the same | |
| JP2024536652A (en) | BACKLIGHT PANEL, MANUFACTURING METHOD, AND DISPLAY PANEL | |
| JP2001264724A (en) | Production control method, display device and plasma display panel | |
| JP3190904B2 (en) | Carrier tape with check pad, method of manufacturing the same, and method of manufacturing tape carrier package | |
| JPH0324524A (en) | Active matrix display device | |
| KR20000066953A (en) | Data pad region of liquid crystal panel | |
| US5482173A (en) | Manufacturing method of forming a passivation layer in a liquid crystal display device | |
| JP2003295936A (en) | Production managing method | |
| TWI848606B (en) | Conductive structure and method of manufacturing the same | |
| KR19990016664A (en) | Banding Tape Carrier Package Structure | |
| JP2006003757A (en) | Substrate for organic el display device, and organic el display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |