CN115616808A - Barrier film and quantum dot film comprising same - Google Patents

Barrier film and quantum dot film comprising same Download PDF

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Publication number
CN115616808A
CN115616808A CN202110798027.XA CN202110798027A CN115616808A CN 115616808 A CN115616808 A CN 115616808A CN 202110798027 A CN202110798027 A CN 202110798027A CN 115616808 A CN115616808 A CN 115616808A
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CN
China
Prior art keywords
layer
barrier film
barrier
quantum dot
film
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Withdrawn
Application number
CN202110798027.XA
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Chinese (zh)
Inventor
王江峰
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Suzhou Yiteou New Material Technology Co ltd
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Suzhou Yiteou New Material Technology Co ltd
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Priority to CN202110798027.XA priority Critical patent/CN115616808A/en
Publication of CN115616808A publication Critical patent/CN115616808A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133614Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The invention discloses a barrier film and a quantum dot film comprising the same, wherein the barrier film comprises a high polymer base material layer, a barrier layer and a diffusion layer which are sequentially stacked; the high polymer substrate layer is a PET substrate layer, the barrier layer is vacuum deposited on a compact inorganic oxide layer on one surface of the high polymer substrate layer, and the diffusion layer is a photocuring resin layer doped with inorganic nanoparticles. The barrier film disclosed by the invention is simple in structure, excellent in water resistance, high in haze, and excellent in bonding performance with the quantum dot film, and the light transmittance is improved to more than 90%.

Description

Barrier film and quantum dot film comprising same
Technical Field
The invention relates to the technical field of quantum dot films, in particular to a barrier film and a quantum dot film comprising the barrier film.
Background
The quantum dot is a semiconductor nanoparticle, the particle size of the quantum dot is 1-10 nm, and the quantum dot can bind conductive particles, holes and excitons in three directions due to the small physical structure of the quantum dot, so that the quantum dot has a quantum effect. The quantum dots can be applied to various fields based on the structural characteristics of the quantum dots, such as the fields of luminescent devices, solar cells, biological fluorescent labels and the like, and have wide application prospects.
At present, the most extensive and profound application field of quantum dots is in the optical field. The quantum dot film prepared by mixing and curing the quantum dot and the light curing glue to form a film is applied to a Liquid Crystal Display (Liquid Crystal Display), the NTSC color gamut can be improved to 110 percent or above, while the NTSC color gamut of the current Liquid Crystal Display can only be about 72 percent, thereby showing excellent color expressive force and fidelity. The organic light emitting diode OLED is inferior to quantum dots in color gamut level and extremely high in production cost. Therefore, the application of the quantum dots in the display field undoubtedly has wider prospects and growth power.
The quantum dot film is obtained by dispersing quantum dots in a resin material and then sheeting the resin material. At present, quantum dot films on the market mostly adopt a barrier film packaging technology, and 2 barrier films are used for clamping a quantum dot resin layer in the middle. The quantum dots have poor water and oxygen resistance, so that the quantum dots are easy to undergo a photochemical reaction under the condition of water and oxygen, and the fluorescence quantum yield is reduced.
The existing barrier film comprises a polymer base material layer, a barrier layer, an adhesive layer, a polymer base material layer and a diffusion layer which are sequentially stacked, the existing barrier film is of a multilayer composite film structure, the cost is high, the product preparation process is complex, the apparent performance is not easy to control in the barrier film preparation and processing process, the yield is greatly influenced, and the optical performance is also reduced more.
Disclosure of Invention
The invention aims to overcome the defects and provides the barrier film which is simple in structure, excellent in water resistance, high in haze, capable of improving the light transmittance to more than 90% and excellent in bonding performance with the quantum dot film.
In order to achieve the above object, a first aspect of the present invention provides a barrier film, which includes a high polymer substrate layer, a barrier layer, and a diffusion layer, which are sequentially stacked.
Preferably, the high polymer substrate layer is a PET substrate layer.
Preferably, the barrier layer is a dense inorganic oxide layer vacuum-deposited on one side of the high polymer substrate layer.
Preferably, the dense inorganic oxide layer is a silicon oxide layer or an aluminum oxide layer.
Preferably, the thickness of the barrier layer is 10 to 200nm.
Preferably, the diffusion layer is a photocurable resin layer doped with inorganic nanoparticles.
By doping inorganic nanoparticles in the light-cured resin, the haze of the barrier film can reach 3% -6%, and uniform light diffusion is realized.
Further, the diffusion layer is arranged on the barrier layer through a coating process by using a light-cured resin doped with inorganic nano particles.
Preferably, the inorganic nanoparticles are silica nanoparticles or titania nanoparticles.
Preferably, the light-cured resin layer is any one of a polyurethane acrylate layer, a polyester acrylate layer, an epoxy acrylate layer, a polyol acrylate layer and an epoxy resin layer.
The diffusion layer not only can diffuse light to form a uniform surface light source, but also can protect the barrier layer.
Preferably, the thickness of the diffusion layer is 1 to 10 μm.
The invention provides a quantum dot film, which comprises a quantum dot layer and the barrier film, wherein the barrier film is arranged on two sides of the quantum dot layer.
Compared with the prior art, the invention has the beneficial effects that:
1. the barrier film disclosed by the invention is simple in structure, excellent in water resistance, high in haze, and excellent in bonding performance between the PET substrate layer and the quantum dot film, and the light transmittance is improved to more than 90%.
2. When the barrier film is used specifically, the requirements of different quantum dots can be met by changing the thickness of the high polymer base material layer, so that the application of the quantum dot film on a photoelectric display is greatly promoted, and the marketization process of a quantum dot display screen is accelerated.
Drawings
Fig. 1 is a barrier film in the present invention.
The correspondence between each mark and the part name is as follows:
a high polymer substrate layer 1, a barrier layer 2, and a diffusion layer 3.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Example 1
Referring to fig. 1, the present embodiment discloses a barrier film, which includes a high polymer substrate layer 1, a barrier layer 2, and a diffusion layer 3 stacked in this order.
The high polymer substrate layer in this embodiment is a PET substrate layer, and the thickness of the high polymer substrate layer in this embodiment is 12 to 188um.
The barrier layer in this embodiment is a silicon oxide layer, and the thickness of the silicon oxide layer is 10nm.
Wherein, the diffusion layer in this embodiment is a polyester acrylate layer doped with inorganic nanoparticles, and the thickness of the diffusion layer in this embodiment is 10 μm; wherein the inorganic nanoparticles are silica nanoparticles.
The barrier film in this example was prepared by the following steps:
s1, depositing a silicon oxide layer with the thickness of 10nm on a PET substrate layer by a magnetron sputtering method, and coating a polyester acrylate layer doped with inorganic nanoparticles on the silicon oxide layer by utilizing coating equipment, wherein the thickness of the polyester acrylate layer is 10 microns, so that the barrier film is obtained.
The coating process in this embodiment may be any one of a blade coating method, a roll coating method, a blade coating method, a spray coating method, and a gravure coating method. It should be noted that the coating process in the present embodiment is not limited to the above selection, and those skilled in the art can make appropriate settings according to the prior art, common general knowledge and conventional means in the field.
Example 2
Referring to fig. 1, the present embodiment discloses a barrier film, which includes a high polymer substrate layer 1, a barrier layer 2, and a diffusion layer 3 stacked in this order.
The high polymer substrate layer in this embodiment is a PET substrate layer, and the thickness of the high polymer substrate layer in this embodiment is 12 to 188um.
The barrier layer in this embodiment is an aluminum oxide layer, and the thickness of the silicon oxide layer is 200nm.
Wherein, the diffusion layer in this embodiment is a polyester acrylate layer doped with inorganic nanoparticles, and the thickness of the diffusion layer in this embodiment is 1 μm; wherein the inorganic nanoparticles are silica nanoparticles.
The barrier film in this example was prepared by the following steps:
s1, depositing a silicon oxide layer with the thickness of 200nm on a PET substrate layer by a magnetron sputtering method, and coating a polyester acrylate layer doped with inorganic nanoparticles on the silicon oxide layer by utilizing coating equipment, wherein the thickness of the polyester acrylate layer is 1 mu m, so that the barrier film is obtained.
The coating process in this embodiment may be any one of a blade coating method, a roll coating method, a blade coating method, a spray coating method, and a gravure coating method. It should be noted that the coating process in the present embodiment is not limited to the above selection, and those skilled in the art can make appropriate settings according to the existing technology, common general knowledge and conventional means in the field.
Example 3
The embodiment discloses a quantum dot film, which comprises a quantum dot layer and a barrier film in embodiment 1; wherein, the quantum dot layer is provided with barrier films on both sides.
Test examples
The water resistance, light transmittance and haze of the barrier films of examples 1 and 2 were measured. Wherein, the water resistance is tested by an MOCON water rate tester, and the light transmittance and the haze are tested by a haze meter layer.
The water blocking of the barrier film prepared in example 1 was found to be 0.4g/m 2 Day, transmittance 91%, haze 3%.
The water resistance of the barrier film prepared in example 2 was 0.1g/m 2 Day, light transmission 90%, haze 6%.
In conclusion, the barrier film disclosed by the invention is simple in structure, excellent in water resistance, high in light transmittance and high in haze. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Those skilled in the art can modify or change the above-described embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in the appended claims.

Claims (10)

1. The barrier film is characterized by comprising a high polymer base material layer, a barrier layer and a diffusion layer which are sequentially stacked.
2. The barrier film of claim 1 wherein said polymeric substrate layer is a PET substrate layer.
3. The barrier film of claim 1 wherein said barrier layer is a dense inorganic oxide layer vacuum deposited on one side of said polymeric substrate layer.
4. The barrier film of claim 3, wherein the dense inorganic oxide layer is a silicon oxide layer or an aluminum oxide layer.
5. The barrier film of claim 1, wherein the barrier layer has a thickness of 10 to 200nm.
6. The barrier film of claim 1, wherein the diffusion layer is a photocurable resin layer doped with inorganic nanoparticles.
7. The barrier film of claim 6, wherein the inorganic nanoparticles are silica nanoparticles or titania nanoparticles.
8. The barrier film of claim 6, wherein the light-curable resin layer is any one of a urethane acrylate layer, a polyester acrylate layer, an epoxy acrylate layer, a polyol acrylate layer, and an epoxy resin layer.
9. The barrier film of claim 1, wherein the diffusion layer has a thickness of 1 to 10 μ ι η.
10. A quantum dot film comprising a quantum dot layer, further comprising the barrier film of any one of claims 1-9, wherein the barrier film is provided on both sides of the quantum dot layer.
CN202110798027.XA 2021-07-15 2021-07-15 Barrier film and quantum dot film comprising same Withdrawn CN115616808A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110798027.XA CN115616808A (en) 2021-07-15 2021-07-15 Barrier film and quantum dot film comprising same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110798027.XA CN115616808A (en) 2021-07-15 2021-07-15 Barrier film and quantum dot film comprising same

Publications (1)

Publication Number Publication Date
CN115616808A true CN115616808A (en) 2023-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110798027.XA Withdrawn CN115616808A (en) 2021-07-15 2021-07-15 Barrier film and quantum dot film comprising same

Country Status (1)

Country Link
CN (1) CN115616808A (en)

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