CN115616293B - Volume resistivity measuring device for semiconductive buffer layer - Google Patents
Volume resistivity measuring device for semiconductive buffer layer Download PDFInfo
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- CN115616293B CN115616293B CN202211113912.0A CN202211113912A CN115616293B CN 115616293 B CN115616293 B CN 115616293B CN 202211113912 A CN202211113912 A CN 202211113912A CN 115616293 B CN115616293 B CN 115616293B
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 39
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- 239000010949 copper Substances 0.000 claims abstract description 32
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- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 claims description 65
- 230000007613 environmental effect Effects 0.000 claims description 21
- 238000005259 measurement Methods 0.000 claims description 21
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- 238000000034 method Methods 0.000 claims description 7
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- 229910052751 metal Inorganic materials 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/14—Measuring resistance by measuring current or voltage obtained from a reference source
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/30—Assessment of water resources
Abstract
The invention relates to a volume resistivity measuring device of a semiconductive buffer layer, which comprises an upper electrode, a lower electrode, an electrode connecting bolt, an upper insulating bracket and a lower insulating bracket, wherein the lower electrode adopts a copper plate; the insulating support is divided into an upper part and a lower part, the lower part is used for fixing the lower electrode, and the upper part is used for fixing the upper electrode and plays a role of an insulating layer; the electrode connecting bolts are respectively connected with the upper electrode and the lower electrode, and then are connected with the measuring instrument through the annealed copper wires. According to the invention, the central control processor is used for detecting the resistance of the buffer layer in different temperature environments, so that whether the buffer layer can meet the preset use requirement in the corresponding environments can be effectively determined, and the detection efficiency of the semiconductive buffer layer volume resistivity measuring device for the volume resistivity of the buffer layer is further improved.
Description
Technical Field
The invention relates to the technical field of wire and cable inspection and detection, in particular to a volume resistivity measuring device for a semiconductive buffer layer.
Background
The high-voltage crosslinked polyethylene insulated power cable has been used for nearly thirty years in China, and imported products are adopted initially, so that the 66-500kV power cable has been fully realized for domestic production so far, and the imported products and domestic products have the characteristics of the sheath structure and the raw material characteristics. The metal sheath of the high-voltage crosslinked polyethylene insulated power cable used in China adopts a corrugated aluminum sheath structure, and other areas abroad generally adopt a comprehensive sheath and a smooth metal sheath structure. The high-voltage cable metal sheath in China adopts a corrugated aluminum sleeve structure, the structure is used for ensuring that insulation is not mechanically damaged, a wrapping buffer layer is used for protecting between the corrugated aluminum sleeve and an insulated wire core, meanwhile, good electrical connectivity between an insulating shield and the metal sheath is ensured, and the buffer layer is required to have good electrical performance. At present, the main performance parameter of the electrical performance of the buffer layer is determined to be volume resistivity, so that the volume resistivity of the buffer layer needs to be detected in the factory of raw materials of the buffer layer of the high-voltage cable, in process control and in finished product inspection, and the measurement of the volume resistivity of the buffer layer can provide a technical solution.
Chinese patent grant bulletin number: CN109030952B discloses a plug volume resistivity measuring equipment for insulator, this equipment has set up temperature and humidity control box, sliding guide and resistivity tester, can ensure the invariable sealed test environment of temperature, humidity through setting up temperature and humidity control box to avoid environmental change to influence measurement accuracy, simultaneously, measure the potential safety hazard that can avoid the electric leakage to cause in the circuit that the plug that awaits measuring is located in temperature and humidity control box, and can avoid outside personnel to contact and can avoid the circuit that the plug that awaits measuring is located, and then further improve measuring security.
Therefore, the technical scheme cannot effectively overcome the condition that the resistance value fluctuates due to the influence of the receiving environment of the core rod to be tested when the temperature or the humidity in the testing environment changes, so that the testing efficiency of the resistance of the core rod to be tested is reduced.
Disclosure of Invention
Therefore, the invention provides a device for measuring the volume resistivity of a semiconductive buffer layer, which is used for solving the problem that the efficiency of measuring the volume resistivity of the buffer layer is low due to the fact that the accurate resistance value of the buffer layer at the corresponding temperature cannot be determined when the measured resistance of the buffer layer fluctuates in the prior art.
In order to achieve the above object, the present invention provides a device for measuring volume resistivity of a semiconductive buffer layer, comprising:
an upper electrode for cooperating with the lower electrode to fix the buffer layer at a corresponding position, comprising a cylindrical upper copper plate for a counterweight load and a rectangular lower copper plate integrally linked with the upper copper plate for an electrode; the upper copper plate is provided with an upper electrode bolt for fixing the copper wire at a designated position of the upper copper plate;
the lower electrode is a cylindrical copper plate and is used for being matched with the upper electrode to fix the buffer layer at a corresponding position; a lower electrode bolt is arranged on the side wall of the lower electrode and used for fixing the copper wire at a designated position of the lower electrode;
the insulating bracket comprises an upper bracket provided with a rectangular through hole for loading the upper electrode and a lower bracket provided with a cylindrical through hole for loading the lower electrode, wherein the upper bracket and the lower bracket are fixedly connected and are insulated, and the upper bracket and the lower bracket are used for respectively fixing the upper electrode and the lower electrode at preset positions;
the voltage generator is respectively connected with the upper electrode and the lower electrode through the copper wires and is used for outputting voltage with corresponding values to the buffer layer through the copper wires;
The tester is connected with the upper electrode and the lower electrode respectively through wiring and is used for detecting current passing through the buffer layer when the voltage generator outputs voltage to the buffer layer;
the central control processor is respectively connected with the voltage generator and the tester and used for calculating the resistance of the buffer layer according to the output voltage of the voltage generator and the current passing through the buffer layer measured by the tester; the central control processor is also used for judging whether to re-detect the current according to the environmental information to overcome the influence of environmental factors on the measurement result of the resistance of the buffer layer or whether to adjust the environmental temperature of the buffer layer to judge whether the buffer layer can meet the use requirement under the corresponding temperature environment when the detection of the current passing through the buffer layer is completed; the environmental information includes an ambient temperature and an ambient humidity.
Further, the central control processor is provided with a first preset demand resistor Ra1, a second preset demand resistor Ra2, a first preset initial test voltage V1, a second preset initial test voltage V2 and a third preset initial test voltage V3, compares the actual use demand resistor Ra of the buffer layer with each preset demand resistor, determines the initial test voltage in each period,
If Ra is less than or equal to Ra1, the central control processor judges that V1 is used as an initial test voltage of the period;
if Ra1 is less than Ra2 and less than or equal to Ra2, the central control processor judges that V2 is used as the initial test voltage of the period;
if Ra > Ra2, the central control processor determines to use V3 as the initial test voltage for the period.
Further, the central control processor is provided with a first preset current I1 and a second preset current I2, when calculating the resistance of the buffer layer, the central control processor controls the voltage generator to output voltage to the buffer layer, sets the output voltage value as an initial test voltage Vx and controls the tester to detect the current I passing through the buffer layer, sets x=1, 2,3,
if I is less than or equal to I1, the central control processor judges that the current passing through the buffer layer is lower than a preset standard, the resistance of the buffer layer cannot be directly obtained through the current, and the central control processor increases the initial test voltage V0 output by the voltage generator;
if I1 is more than I and less than or equal to I2, the central control processor judges that the current passing through the buffer layer meets a preset standard, and the central control processor controls the tester to periodically detect the current value of the buffer layer and respectively calculates the resistance of the buffer layer in each period according to the detected current value;
If I is more than I2, the central control processor judges that the current passing through the buffer layer is higher than a preset standard, and the central control processor reduces the initial test voltage Vx output by the voltage generator.
Further, the central control processor is provided with a first preset resistance change amplitude delta R1 and a second preset resistance change amplitude delta R2, when the central control processor determines that the current passing through the buffer layer is compounded with preset standards, the central control processor controls the tester to periodically detect the current value of the buffer layer and respectively calculates the resistance of the buffer layer in each period according to the measured current value, the central control processor calculates the change amplitude delta R of the resistance of the buffer layer when finishing calculation of the resistance value of the buffer layer in each period, and the central control processor sets delta R = Rmax-Rmin, wherein Rmax is the maximum value of the resistance of the buffer layer in the measurement process, rmin is the minimum value of the resistance of the buffer layer in the measurement process,
if the delta R is less than or equal to delta R1, the central control processor judges that the fluctuation range is within a preset standard, and adjusts the temperature in the detection environment according to the use temperature requirement of the buffer layer so as to re-detect the resistance value of the buffer layer;
if DeltaR 1 < DeltaR2 is less than or equal to DeltaR 2, the central control processor judges that the resistance value of the buffer layer fluctuates due to the influence of the environment, and the central control processor detects the environment information to determine the reason of the fluctuation of the resistance value of the buffer layer;
If DeltaR >. DeltaR 2, the central control processor judges that the pretightening force of the upper electrode bolt and the lower electrode bolt is lower than a preset standard, and adjusts the pretightening force of the corresponding electrode bolt according to the difference DeltaR between DeltaR and DeltaR 2, and sets DeltaR= |DeltaR-DeltaR 2.
Further, a temperature control device for adjusting the ambient temperature is further arranged in the volume resistivity measuring device of the semiconductive buffer layer, the central control processor controls the temperature control device to adjust the ambient temperature to a corresponding value according to the use temperature requirement of the buffer layer when the DeltaR is less than or equal to DeltaR 1, and re-detects the current passing through the buffer layer after the adjustment of the ambient temperature is completed, the central control processor records the re-detected current as I',
if I 'meets I1 < I' < I2, the central control processor judges that the current meets a preset standard, calculates the resistance of the buffer layer at the ambient temperature and calculates the volume resistivity of the buffer layer at the corresponding temperature after the calculation is completed;
if I 'does not meet I1 < I'. Ltoreq.I2, the central control processor determines that the current does not meet a preset standard, and the resistance of the buffer layer does not meet the use requirement applied to the ambient temperature.
Further, the semi-conductive buffer layer volume resistivity measuring device is also provided with a temperature and humidity detector for detecting the ambient temperature and the ambient humidity and a temperature control device for adjusting the ambient temperature in the device, the central control processor controls the temperature and humidity detector to detect the ambient information when the delta R1 is less than or equal to delta R2,
If the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is located is higher than a preset standard, the central control processor judges to change the detection environment or dehumidify the environment;
if the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard, the central control processor judges the temperature of the environment where the detecting device is positioned;
if the temperature fluctuation range of the environment where the semi-conductive buffer layer volume resistivity measuring device is located is larger than a preset standard, the central control processor judges to change the detection environment or carries out constant temperature treatment on the semi-conductive buffer layer volume resistivity measuring device;
if the temperature fluctuation range of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard and the environment temperature does not belong to the working temperature of the buffer layer, the central control processor controls the temperature control device to adjust the environment temperature to a corresponding value;
if the temperature fluctuation range of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is located meets a preset standard and the environment temperature belongs to the working temperature of the buffer layer, the central control processor judges that the bolts are not fastened and adjusts the pretightening force F of the upper electrode bolts and the pretightening force F of the lower electrode bolts according to delta r.
Further, the central control processor is provided with a first preset variation amplitude difference Deltar 1, a second preset variation amplitude difference Deltar 2, a first preset pretightening force adjusting coefficient alpha 1, a second preset pretightening force adjusting coefficient alpha 2 and a third preset pretightening force adjusting coefficient alpha 3, wherein Deltar 1 < Deltar2, 1 < Delta1 < alpha 2 < alpha 3, when the central control processor judges that the temperature fluctuation range of the environment where the volume resistivity measuring device of the semiconductive buffer layer is positioned meets the preset standard and the environment temperature belongs to the working temperature of the buffer layer or the central control processor judges DeltaR > DeltaR2, the central control processor adjusts pretightening force F of the upper electrode bolt and the lower electrode bolt according to Deltar,
if Deltar is less than or equal to Deltar 1, the central control processor uses alpha 1 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
if Deltar 1 < Deltar2 is less than or equal to Deltar 2, the central control processor uses alpha 2 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
if Deltar > Deltar2, the central control processor uses alpha 3 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
when the central control processor uses alpha i to adjust the pretightening force of the bolt, i=1, 2 and 3, and the pretightening force after adjustment is marked as F ', F' =F×alpha i.
Further, the central control processor is provided with a first preset current low difference delta I a1, a second preset current low difference delta I a2, a first preset current high difference delta I b1, a second preset current high difference delta I b2, a first preset initial test voltage adjustment coefficient beta 1, a second preset initial test voltage adjustment coefficient beta 2, a third preset initial test voltage adjustment coefficient beta 3, a fourth preset initial test voltage adjustment coefficient gamma 1, a fifth preset initial test voltage adjustment coefficient gamma 2 and a sixth preset initial test voltage adjustment coefficient gamma 3, wherein delta I a1 < [ delta I a ] 2, [ delta I b ] 1 < [ delta I b ] 2,1 < beta 3,0.5 < gamma 3 < gamma 2 < gamma 1 < 1, when the current of the buffer layer of the preset volume is determined to be lower than a preset standard, the central control processor calculates I and I1 and generates an initial voltage adjustment coefficient delta 0 according to the I.ltoreq.I 1 when the current of the buffer layer is determined to be less than the preset standard,
if delta I0 is less than or equal to delta I a1, the central control processor uses beta 1 to regulate the initial test voltage;
if delta I a1 < [ delta ] I0 is less than or equal to delta I a2, the central control processor uses beta 2 to regulate the initial test voltage;
if Δi0 >. Δ I a2, the central control processor adjusts the initial test voltage using β3;
When the central control processor uses beta j to adjust the initial test voltage, j=1, 2 and 3, and the adjusted initial test voltage is Vx ', vx' =vx×beta j;
when I is more than I2, the central control processor judges that the current of the buffer layer with preset volume is overlarge, calculates the difference delta I 'between I and I2, adjusts the initial test voltage according to the comparison between delta I' and each preset overlarge difference,
if delta I' is less than or equal to delta I b1, the central control processor uses gamma 1 to adjust the initial test voltage;
if delta I b1 < deltaI' < delta I b2, the central control processor uses gamma 2 to regulate the initial test voltage;
if Δi' > "Δ I b2, the central control processor uses γ3 to adjust the initial test voltage;
when the central control processor uses γk to adjust the initial test voltage, k=1, 2,3, and the adjusted initial test voltage is Vy ', vy' =vx×γk.
Further, the upper copper plate and the lower copper plate are of a homogeneous integrated structure.
Further, the central control processor calculates the volume resistivity ρ of the buffer layer in the corresponding temperature environment when judging that the buffer layer can meet the use requirement in the corresponding environment temperature, and sets ρ=r×s/L, wherein S is the area of the measuring electrode, L is the thickness of the buffer layer, and R is the resistance of the buffer layer in the corresponding temperature environment.
Compared with the prior art, the semi-conductive buffer layer volume resistivity measuring device has the beneficial effects that by arranging the central control processor, whether the current is re-detected according to the environmental information when the current passing through the buffer layer is detected can be judged to overcome the influence of the environmental factors on the measuring result of the buffer layer resistance or whether the environment temperature of the buffer layer is regulated to judge whether the buffer layer can meet the use requirement under the corresponding temperature environment or not, the condition that the resistance value of the buffer layer fluctuates caused by the environmental factors can be effectively avoided, the detection efficiency of the semi-conductive buffer layer volume resistivity measuring device for the volume resistivity of the buffer layer is effectively improved, and meanwhile, whether the buffer layer can meet the preset use requirement under the corresponding environment can be effectively determined by detecting the resistance of the buffer layer under the different temperature environments by using the central control processor, so that the detection efficiency of the semi-conductive buffer layer volume resistivity measuring device for the volume resistivity of the buffer layer is further improved.
Further, the central control processor is provided with a plurality of preset demand resistors and a plurality of preset initial test voltages, and the output voltage is determined according to different demand resistors, so that the condition that the current value passing through the buffer layer cannot be accurately measured due to the fact that the magnitude of the output voltage is larger than that of the demand resistors or smaller than that of the demand resistors can be effectively avoided, the measurement accuracy of the current passing through the buffer layer is effectively improved, the calculation accuracy of the resistance of the buffer layer is effectively improved, and the detection efficiency of the volume resistivity measuring device of the semi-conductive buffer layer for the volume resistivity of the buffer layer is further improved.
Furthermore, the central control processor is provided with a first preset current I1 and a second preset current I2, and the current I passing through the buffer layer is compared with each preset current and the initial test voltage output by the voltage generator is timely increased or decreased according to the comparison result, so that the current of the buffer layer can be effectively compounded with the preset standard, and the calculation accuracy of the semi-conductive buffer layer volume resistivity measuring device for the buffer layer resistance is further improved, and meanwhile the detection efficiency of the semi-conductive buffer layer volume resistivity measuring device for the buffer layer volume resistivity is further improved.
Furthermore, the central control processor is provided with a plurality of preset resistance change amplitudes, the change amplitudes of the resistance of the buffer layer and the preset resistance change amplitudes are compared, whether the fluctuation range is within a preset standard or not is judged in time according to the comparison result, whether environmental information needs to be regulated and detected is judged, and the condition that the resistance value of the buffer layer fluctuates due to environmental factors is effectively avoided, so that the detection efficiency of the volume resistivity measuring device of the semi-conductive buffer layer for the volume resistivity of the buffer layer is further improved.
Furthermore, by arranging the temperature control device, the central control processor controls the temperature control device to adjust the ambient temperature to a corresponding value according to the use temperature requirement of the buffer layer when the DeltaR is less than or equal to DeltaR 1, and re-detects the current passing through the buffer layer after the ambient temperature adjustment is finished.
Furthermore, by arranging the temperature and humidity detector, the temperature and humidity environment in which the volume resistivity measuring device of the semi-conductive buffer layer is positioned can be timely adjusted, measurement deviation caused by the external environment is effectively avoided, and the detection precision of the volume resistivity measuring device of the semi-conductive buffer layer is further improved.
Further, the central control processor is provided with a plurality of preset variation amplitude differences and a plurality of preset pretightening force adjusting coefficients, and the pretightening force of the upper electrode bolt and the pretightening force of the lower electrode bolt are adjusted according to the comparison result by comparing Deltar with each preset amplitude difference.
Further, the central control processor is provided with a plurality of preset low current difference values, a plurality of preset high current difference values and a plurality of preset initial test voltage adjustment coefficients, and the I1 are compared, and the initial test voltage is adjusted according to the comparison result, so that the accessed voltage is effectively ensured to be in accordance with the preset value, the resistance value meeting the requirement can be stably obtained, and the accuracy of measurement of the volume resistivity measuring device of the semiconductive buffer layer is further ensured; meanwhile, the invention compares the I and the I2 and adjusts the initial test voltage according to the comparison result, thereby effectively ensuring that the accessed voltage meets the preset value, stably obtaining the resistance value meeting the requirement and further ensuring the accuracy of the semiconductive buffer layer volume resistivity measuring device for measuring the volume resistivity of the buffer layer.
Furthermore, when the volume resistivity is detected, the invention only needs to put a new sample into the upper electrode and the lower electrode, the electrode connecting bolts are respectively connected with the upper electrode and the lower electrode, and then the electrode connecting bolts are connected with the measuring instrument through the annealed copper wire, so that the measuring instrument can directly read the detection data, and the invention has simple structure and convenient and quick operation. Meanwhile, when detecting data, only a new sample is required to be dragged, and the detection data of different points can be directly read through the measuring instrument, so that the dispersibility coefficient can be obtained more conveniently, quickly and accurately.
Furthermore, the invention adopts the upper and lower insulating brackets, and the bracket designs the hole slots with the same shape as the electrode so as to fix the upper and lower electrodes, ensure that the contact positions of the upper and lower electrodes are concentric and corresponding, effectively ensure that the upper and lower electrodes are fully contacted, thereby improving the reliability and accuracy of the detection structure.
Furthermore, the upper electrode and the lower electrode adopt the composite electrode made of the same material, so that the upper electrode and the lower electrode are tightly contacted, the reliability and the accuracy of a detection structure are improved, and the upper electrode and the lower electrode adopt an integrated structure, so that the operation of a measurement process is more convenient and quicker.
Drawings
FIG. 1 is a schematic diagram showing the structure of a device for measuring volume resistivity of a semiconductive buffer layer according to the present invention;
FIG. 2 is a schematic diagram showing a schematic cross-sectional front view of a device for measuring volume resistivity of a semiconductor buffer layer according to the present invention;
FIG. 3 is a schematic diagram of a left-hand structure of a device for measuring volume resistivity of a semiconductive buffer layer according to the present invention.
In the figure: 1. an upper electrode; 2. a lower electrode; 3. an insulating support; 4. an upper electrode bolt; 5. and a lower electrode bolt.
Detailed Description
In order that the objects and advantages of the invention will become more apparent, the invention will be further described with reference to the following examples; it should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
It should be noted that, in the description of the present invention, terms of directions or positional relationships indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", and the like are based on the directions or positional relationships shown in the drawings, which are merely for convenience of description, and do not indicate or imply that the semiconductive buffer layer volume resistivity measuring device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, it should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those skilled in the art according to the specific circumstances.
Fig. 1 to 3 are schematic front view, schematic front view and schematic left view of a device for measuring volume resistivity of a semiconductor buffer layer according to the present invention. The device for measuring the volume resistivity of the semiconductive buffer layer comprises:
an upper electrode 1 for cooperating with the lower electrode 2 to fix the buffer layer at a corresponding position, comprising a cylindrical upper copper plate for a counterweight load and a rectangular lower copper plate integrally linked with the upper copper plate for an electrode; the upper copper plate is provided with an upper electrode bolt 4 for fixing the copper wire at a designated position of the upper copper plate;
the lower electrode 2 is a cylindrical copper plate and is used for being matched with the upper electrode 1 to fix the buffer layer at a corresponding position; a lower electrode bolt 5 is arranged on the side wall of the lower electrode 2 and is used for fixing a copper wire at a designated position of the lower electrode 2;
the insulating bracket 3 comprises an upper bracket provided with a rectangular through hole for loading the upper electrode and a lower bracket provided with a cylindrical through hole for loading the lower electrode, wherein the upper bracket and the lower bracket are fixedly connected and are insulated, and the upper bracket and the lower bracket are used for respectively fixing the upper electrode 1 and the lower electrode 2 at preset positions;
A voltage generator (not shown) connected to the upper electrode 1 and the lower electrode 2 through the copper wires, respectively, for outputting a voltage of a corresponding value to the buffer layer through the copper wires;
a tester (not shown) connected to the upper electrode 1 and the lower electrode 2 through wires, respectively, for detecting a current passing through the buffer layer when the voltage generator outputs a voltage to the buffer layer;
a central control processor (not shown) connected to the voltage generator and the tester, respectively, for calculating the resistance of the buffer layer according to the output voltage of the voltage generator and the current passing through the buffer layer measured by the tester; the central control processor is also used for judging whether to re-detect the current according to the environmental information to overcome the influence of environmental factors on the measurement result of the resistance of the buffer layer or whether to adjust the environmental temperature of the buffer layer to judge whether the buffer layer can meet the use requirement under the corresponding temperature environment when the detection of the current passing through the buffer layer is completed; the environmental information includes an ambient temperature and an ambient humidity.
The invention adopts the upper and lower insulating brackets, and the bracket designs the hole slots with the same shape as the electrode so as to fix the upper and lower electrodes, ensure that the contact positions of the upper and lower electrodes are concentric and corresponding, effectively ensure that the upper and lower electrodes are fully contacted, thereby improving the reliability and accuracy of the detection structure.
Specifically, the central control processor is provided with a first preset demand resistor Ra1, a second preset demand resistor Ra2, a first preset initial test voltage V1, a second preset initial test voltage V2 and a third preset initial test voltage V3, compares the actual use demand resistor Ra of the buffer layer with each preset demand resistor, determines the initial test voltage in each period,
if Ra is less than or equal to Ra1, the central control processor judges that V1 is used as an initial test voltage of the period;
if Ra1 is less than Ra2 and less than or equal to Ra2, the central control processor judges that V2 is used as the initial test voltage of the period;
if Ra > Ra2, the central control processor determines to use V3 as the initial test voltage for the period.
The invention can effectively avoid the condition that the magnitude of the output voltage is larger than that of the demand resistor or the magnitude of the output voltage is smaller than that of the demand resistor, so that the current value passing through the buffer layer can not be accurately measured, effectively improves the measurement precision of the current passing through the buffer layer, simultaneously effectively improves the calculation precision of the resistance of the buffer layer, and further improves the detection efficiency of the volume resistivity measuring device of the semi-conductive buffer layer for the volume resistivity of the buffer layer.
Specifically, the central control processor is provided with a first preset current I1 and a second preset current I2, when calculating the resistance of the buffer layer, the central control processor controls the voltage generator to output voltage to the buffer layer, sets the output voltage value as an initial test voltage Vx and controls the tester to detect the current I passing through the buffer layer, sets x=1, 2,3,
if I is less than or equal to I1, the central control processor judges that the current passing through the buffer layer is lower than a preset standard, the resistance of the buffer layer cannot be directly obtained through the current, and the central control processor increases the initial test voltage V0 output by the voltage generator;
if I1 is more than I and less than or equal to I2, the central control processor judges that the current passing through the buffer layer meets a preset standard, and the central control processor controls the tester to periodically detect the current value of the buffer layer and respectively calculates the resistance of the buffer layer in each period according to the detected current value;
if I is more than I2, the central control processor judges that the current passing through the buffer layer is higher than a preset standard, and the central control processor reduces the initial test voltage Vx output by the voltage generator.
The invention can effectively lead the current of the buffer layer to be compounded with the preset standard by comparing the current I passing through the buffer layer with each preset current and timely increasing or decreasing the initial test voltage output by the voltage generator according to the comparison result, and further improves the calculation precision of the semi-conductive buffer layer volume resistivity measuring device aiming at the buffer layer resistance and the detection efficiency of the semi-conductive buffer layer volume resistivity measuring device aiming at the buffer layer volume resistivity.
Specifically, the central control processor is provided with a first preset resistance change amplitude delta R1 and a second preset resistance change amplitude delta R2, when the central control processor determines that the current passing through the buffer layer is compounded with preset standards, the central control processor controls the tester to periodically detect the current value of the buffer layer and respectively calculate the resistance of the buffer layer in each period according to the measured current value, the central control processor calculates the change amplitude delta R of the resistance of the buffer layer when finishing the calculation of the resistance value of the buffer layer in each period, and the central control processor sets delta R=Rmax-Rmin, wherein Rmax is the maximum value of the resistance of the buffer layer in the measurement process, rmin is the minimum value of the resistance of the buffer layer in the measurement process,
if the delta R is less than or equal to delta R1, the central control processor judges that the fluctuation range is within a preset standard, and adjusts the temperature in the detection environment according to the use temperature requirement of the buffer layer so as to re-detect the resistance value of the buffer layer;
if DeltaR 1 < DeltaR2 is less than or equal to DeltaR 2, the central control processor judges that the resistance value of the buffer layer fluctuates due to the influence of the environment, and the central control processor detects the environment information to determine the reason of the fluctuation of the resistance value of the buffer layer;
if Δr > - Δr2, the central control processor determines that the pre-tightening force of the upper electrode bolt 4 and the lower electrode bolt 5 is lower than a preset standard, and adjusts the pre-tightening force of the corresponding electrode bolt according to the difference Δr between Δr and Δr2, and sets Δr= - Δr- Δr2.
The invention compares the variation amplitude of the buffer layer resistance with each preset resistance variation amplitude, judges whether the fluctuation range is within the preset standard or not in time according to the comparison result, and judges whether the fluctuation range needs to be regulated to detect the environmental information or not, thereby effectively avoiding the occurrence of fluctuation of the resistance value of the buffer layer caused by environmental factors, further improving the detection efficiency of the volume resistivity measuring device of the semi-conductive buffer layer aiming at the volume resistivity of the buffer layer, and simultaneously, the central control processor can timely adjust the pretightening force of the upper electrode bolt and the lower electrode bolt by judging that the variation amplitude of the buffer layer resistance is higher than the preset variation amplitude, and effectively avoiding the occurrence of low measurement precision caused by the self reason of the volume resistivity measuring device of the semi-conductive buffer layer.
Specifically, a temperature control device for adjusting the ambient temperature is further arranged in the volume resistivity measuring device of the semiconductive buffer layer, the central control processor controls the temperature control device to adjust the ambient temperature to a corresponding value according to the use temperature requirement of the buffer layer when determining that DeltaR is less than or equal to DeltaR 1, and re-detects the current passing through the buffer layer after the adjustment of the ambient temperature is completed, the central control processor records the re-detected current as I',
If I 'meets I1 < I' < I2, the central control processor judges that the current meets a preset standard, calculates the resistance of the buffer layer at the ambient temperature and calculates the volume resistivity of the buffer layer at the corresponding temperature after the calculation is completed;
if I 'does not meet I1 < I'. Ltoreq.I2, the central control processor determines that the current does not meet a preset standard, and the resistance of the buffer layer does not meet the use requirement applied to the ambient temperature.
According to the invention, the temperature control device is arranged, so that the central control processor controls the temperature control device to adjust the ambient temperature to a corresponding value according to the use temperature requirement of the buffer layer when the DeltaR is less than or equal to DeltaR 1, and re-detects the current passing through the buffer layer after the ambient temperature adjustment is finished, and the calculation precision of the volume resistivity measuring device of the semi-conductive buffer layer for the resistance of the buffer layer is further improved while the detection efficiency of the volume resistivity measuring device of the semi-conductive buffer layer for the volume resistivity of the buffer layer is further improved by comparing the adjusted current with each preset current.
Specifically, the semi-conductive buffer layer volume resistivity measuring device is also provided with a temperature and humidity detector for detecting the ambient temperature and the ambient humidity and a temperature control device for adjusting the ambient temperature in the device, the central control processor controls the temperature and humidity detector to detect the ambient information when the delta R1 is less than or equal to delta R2,
If the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is located is higher than a preset standard, the central control processor judges to change the detection environment or dehumidify the environment;
if the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard, the central control processor judges the temperature of the environment where the detecting device is positioned;
if the temperature fluctuation range of the environment where the semi-conductive buffer layer volume resistivity measuring device is located is larger than a preset standard, the central control processor judges to change the detection environment or carries out constant temperature treatment on the semi-conductive buffer layer volume resistivity measuring device;
if the temperature fluctuation range of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard and the environment temperature does not belong to the working temperature of the buffer layer, the central control processor controls the temperature control device to adjust the environment temperature to a corresponding value;
if the temperature fluctuation range of the environment where the volume resistivity measuring device for the semiconductive buffer layer is located meets a preset standard and the environment temperature belongs to the working temperature of the buffer layer, the central control processor judges that the bolts are not fastened and adjusts the pretightening force F of the upper electrode bolt 4 and the lower electrode bolt 5 according to delta r.
According to the invention, by arranging the temperature and humidity detector, the temperature and humidity environment of the volume resistivity measuring device of the semi-conductive buffer layer can be timely adjusted, so that the measurement deviation caused by the external environment is effectively avoided, and the detection precision of the volume resistivity measuring device of the semi-conductive buffer layer is further improved.
Specifically, the central control processor is provided with a first preset variation amplitude difference Deltar 1, a second preset variation amplitude difference Deltar 2, a first preset pretightening force adjusting coefficient alpha 1, a second preset pretightening force adjusting coefficient alpha 2 and a third preset pretightening force adjusting coefficient alpha 3, wherein Deltar 1 < Deltar2, 1 < Delta1 < alpha 2 < alpha 3, when the central control processor judges that the temperature fluctuation range of the environment where the volume resistivity measuring device of the semiconductive buffer layer is positioned meets the preset standard and the environment temperature belongs to the working temperature of the buffer layer or the central control processor judges DeltaR > DeltaR2, the central control processor adjusts pretightening force F of the upper electrode bolt 4 and the lower electrode bolt 5 according to Deltar,
if Deltar is less than or equal to Deltar 1, the central control processor uses alpha 1 to adjust the pretightening force F of the upper electrode bolt 4 and the lower electrode bolt 5;
if Deltar 1 < Deltar2 is less than or equal to Deltar 2, the central control processor uses alpha 2 to adjust the pretightening force F of the upper electrode bolt 4 and the lower electrode bolt 5;
If Deltar > Deltar2, the central control processor uses alpha 3 to adjust the pretightening force F of the upper electrode bolt 4 and the lower electrode bolt 5;
when the central control processor uses alpha i to adjust the pretightening force of the bolt, i=1, 2 and 3, and the pretightening force after adjustment is marked as F ', F' =F×alpha i.
The central control processor is provided with a plurality of preset variation amplitude differences and a plurality of preset pretightening force adjusting coefficients, and the pretightening force of the upper electrode bolt 4 and the pretightening force of the lower electrode bolt 5 are adjusted according to the comparison result by comparing Deltar with each preset amplitude difference.
Specifically, the central control processor is provided with a first preset current low difference delta I a1, a second preset current low difference delta I a2, a first preset current high difference delta I b1, a second preset current high difference delta I b2, a first preset initial test voltage adjustment coefficient beta 1, a second preset initial test voltage adjustment coefficient beta 2, a third preset initial test voltage adjustment coefficient beta 3, a fourth preset initial test voltage adjustment coefficient gamma 1, a fifth preset initial test voltage adjustment coefficient gamma 2 and a sixth preset initial test voltage adjustment coefficient gamma 3, wherein delta I a1 < [ delta I a ] 2, delta I b1 < [ delta I b ] 2,1 < beta 3,0.5 < gamma 3 < gamma 2 < gamma 1 < 1, when I is less than or equal to I1, the central control processor calculates I and I1 when the current of the buffer layer of the preset volume is determined to be lower than a preset standard and outputs the initial voltage adjustment coefficient delta 0 delta 3 according to the I0 delta 352,
If delta I0 is less than or equal to delta I a1, the central control processor uses beta 1 to regulate the initial test voltage;
if delta I a1 < [ delta ] I0 is less than or equal to delta I a2, the central control processor uses beta 2 to regulate the initial test voltage;
if Δi0 >. Δ I a2, the central control processor adjusts the initial test voltage using β3;
when the central control processor uses beta j to adjust the initial test voltage, j=1, 2 and 3, and the adjusted initial test voltage is Vx ', vx' =vx×beta j;
when I is more than I2, the central control processor judges that the current of the buffer layer with preset volume is overlarge, calculates the difference delta I 'between I and I2, adjusts the initial test voltage according to the comparison between delta I' and each preset overlarge difference,
if delta I' is less than or equal to delta I b1, the central control processor uses gamma 1 to adjust the initial test voltage;
if delta I b1 < deltaI' < delta I b2, the central control processor uses gamma 2 to regulate the initial test voltage;
if Δi' > "Δ I b2, the central control processor uses γ3 to adjust the initial test voltage;
when the central control processor uses γk to adjust the initial test voltage, k=1, 2,3, and the adjusted initial test voltage is Vy ', vy' =vx×γk.
The invention compares I with I1 and adjusts initial test voltage according to comparison result, thereby effectively ensuring that the accessed voltage accords with preset value, stably obtaining resistance value meeting requirement, and further ensuring accuracy of measurement of the volume resistivity measuring device of the semiconductive buffer layer; meanwhile, the invention compares the I and the I2 and adjusts the initial test voltage according to the comparison result, thereby effectively ensuring that the accessed voltage meets the preset value, stably obtaining the resistance value meeting the requirement and further ensuring the accuracy of the semiconductive buffer layer volume resistivity measuring device aiming at the buffer layer volume resistivity.
Specifically, the upper copper plate and the lower copper plate are of a homogeneous integrated structure.
Specifically, the central control processor calculates the volume resistivity ρ of the buffer layer in the corresponding temperature environment when judging that the buffer layer can meet the use requirement in the corresponding environment temperature, and sets ρ=r×s/L, wherein S is the area of the measuring electrode, L is the thickness of the buffer layer, and R is the resistance of the buffer layer in the corresponding temperature environment.
Thus far, the technical solution of the present invention has been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of protection of the present invention is not limited to these specific embodiments. Equivalent modifications and substitutions for related technical features may be made by those skilled in the art without departing from the principles of the present invention, and such modifications and substitutions will be within the scope of the present invention.
The foregoing description is only of the preferred embodiments of the invention and is not intended to limit the invention; various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductive buffer layer volume resistivity measurement apparatus, comprising:
an upper electrode for cooperating with the lower electrode to fix the buffer layer at a corresponding position, comprising a cylindrical upper copper plate for a counterweight load and a rectangular lower copper plate integrally linked with the upper copper plate for an electrode; the upper copper plate is provided with an upper electrode bolt for fixing the copper wire at a designated position of the upper copper plate;
the lower electrode is a cylindrical copper plate and is used for being matched with the upper electrode to fix the buffer layer at a corresponding position; a lower electrode bolt is arranged on the side wall of the lower electrode and used for fixing the copper wire at a designated position of the lower electrode;
the insulating bracket comprises an upper bracket provided with a rectangular through hole for loading the upper electrode and a lower bracket provided with a cylindrical through hole for loading the lower electrode, wherein the upper bracket and the lower bracket are fixedly connected and are insulated, and the upper bracket and the lower bracket are used for respectively fixing the upper electrode and the lower electrode at preset positions;
the voltage generator is respectively connected with the upper electrode and the lower electrode through the copper wires and is used for outputting voltage with corresponding values to the buffer layer through the copper wires;
The tester is connected with the upper electrode and the lower electrode respectively through wiring and is used for detecting current passing through the buffer layer when the voltage generator outputs voltage to the buffer layer;
the central control processor is respectively connected with the voltage generator and the tester and used for calculating the resistance of the buffer layer according to the output voltage of the voltage generator and the current passing through the buffer layer measured by the tester; the central control processor is also used for judging whether to re-detect the current according to the environmental information to overcome the influence of environmental factors on the measurement result of the resistance of the buffer layer or whether to adjust the environmental temperature of the buffer layer to judge whether the buffer layer can meet the use requirement under the corresponding temperature environment when the detection of the current passing through the buffer layer is completed; the environmental information includes an ambient temperature and an ambient humidity.
2. The device for measuring volume resistivity of a semiconductor buffer layer according to claim 1, wherein the central control processor is provided with a first preset demand resistor Ra1, a second preset demand resistor Ra2, a first preset initial test voltage V1, a second preset initial test voltage V2 and a third preset initial test voltage V3, compares the actual demand resistor Ra of the buffer layer with each preset demand resistor, determines the initial test voltage in each period,
If Ra is less than or equal to Ra1, the central control processor judges that V1 is used as an initial test voltage of the period;
if Ra1 is less than Ra2 and less than or equal to Ra2, the central control processor judges that V2 is used as the initial test voltage of the period;
if Ra > Ra2, the central control processor determines to use V3 as the initial test voltage for the period.
3. The device for measuring the volume resistivity of a semiconductive buffer layer according to claim 2, wherein the central control processor is provided with a first preset current I1 and a second preset current I2, and the central control processor controls the voltage generator to output a voltage to the buffer layer when calculating the resistance of the buffer layer, sets the output voltage value as an initial test voltage Vx and controls the tester to detect the current I passing through the buffer layer, sets x=1, 2,3,
if I is less than or equal to I1, the central control processor judges that the current passing through the buffer layer is lower than a preset standard, the resistance of the buffer layer cannot be directly obtained through the current, and the central control processor increases the initial test voltage V0 output by the voltage generator;
if I1 is more than I and less than or equal to I2, the central control processor judges that the current passing through the buffer layer meets a preset standard, and the central control processor controls the tester to periodically detect the current value of the buffer layer and respectively calculates the resistance of the buffer layer in each period according to the detected current value;
If I is more than I2, the central control processor judges that the current passing through the buffer layer is higher than a preset standard, and the central control processor reduces the initial test voltage Vx output by the voltage generator.
4. The apparatus according to claim 3, wherein the central control processor is provided with a first preset resistance variation amplitude DeltaR 1 and a second preset resistance variation amplitude DeltaR 2, controls the tester to periodically detect the current value of the buffer layer when it is determined that the current passing through the buffer layer is compounded with a preset standard and calculates the resistance of the buffer layer in each period based on the measured current value, calculates the variation amplitude DeltaR of the buffer layer resistance when the calculation of the resistance value of the buffer layer in each period is completed, sets DeltaR=Rmax-Rmin, wherein Rmax is the maximum value of the buffer layer resistance in the measurement process, rmin is the minimum value of the buffer layer resistance in the measurement process,
if the delta R is less than or equal to delta R1, the central control processor judges that the fluctuation range is within a preset standard, and adjusts the temperature in the detection environment according to the use temperature requirement of the buffer layer so as to re-detect the resistance value of the buffer layer;
if DeltaR 1 < DeltaR2 is less than or equal to DeltaR 2, the central control processor judges that the resistance value of the buffer layer fluctuates due to the influence of the environment, and the central control processor detects the environment information to determine the reason of the fluctuation of the resistance value of the buffer layer;
If DeltaR >. DeltaR 2, the central control processor judges that the pretightening force of the upper electrode bolt and the lower electrode bolt is lower than a preset standard, and adjusts the pretightening force of the corresponding electrode bolt according to the difference DeltaR between DeltaR and DeltaR 2, and sets DeltaR= |DeltaR-DeltaR 2.
5. The device for measuring volume resistivity of a semiconductor buffer layer according to claim 4, wherein a temperature control device for adjusting the ambient temperature is further provided in the device for measuring volume resistivity of the semiconductor buffer layer, the central control processor controls the temperature control device to adjust the ambient temperature to a corresponding value according to the use temperature requirement of the buffer layer when determining DeltaR < DeltaR 1 and re-detects the current passing through the buffer layer after the completion of the adjustment of the ambient temperature, the central control processor records the re-detected current as I',
if I 'meets I1 < I' < I2, the central control processor judges that the current meets a preset standard, calculates the resistance of the buffer layer at the ambient temperature and calculates the volume resistivity of the buffer layer at the corresponding temperature after the calculation is completed;
if I 'does not meet I1 < I'. Ltoreq.I2, the central control processor determines that the current does not meet a preset standard, and the resistance of the buffer layer does not meet the use requirement applied to the ambient temperature.
6. The device for measuring volume resistivity of a semiconductor buffer layer according to claim 4, wherein a temperature and humidity detector for detecting an ambient temperature and an ambient humidity and a temperature control device for adjusting the ambient temperature in the device are further provided in the device for measuring volume resistivity of a semiconductor buffer layer, the central control processor controls the temperature and humidity detector to detect the ambient information when DeltaR 1 < DeltaR2,
if the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is located is higher than a preset standard, the central control processor judges to change the detection environment or dehumidify the environment;
if the humidity of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard, the central control processor judges the temperature of the environment where the detecting device is positioned;
if the temperature fluctuation range of the environment where the semi-conductive buffer layer volume resistivity measuring device is located is larger than a preset standard, the central control processor judges to change the detection environment or carries out constant temperature treatment on the semi-conductive buffer layer volume resistivity measuring device;
if the temperature fluctuation range of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is positioned meets a preset standard and the environment temperature does not belong to the working temperature of the buffer layer, the central control processor controls the temperature control device to adjust the environment temperature to a corresponding value;
If the temperature fluctuation range of the environment where the volume resistivity measuring device of the semi-conductive buffer layer is located meets a preset standard and the environment temperature belongs to the working temperature of the buffer layer, the central control processor judges that the bolts are not fastened and adjusts the pretightening force F of the upper electrode bolts and the pretightening force F of the lower electrode bolts according to delta r.
7. The apparatus according to claim 6, wherein the central control processor is provided with a first preset variation amplitude difference Deltar 1, a second preset variation amplitude difference Deltar 2, a first preset pretightening force adjustment coefficient alpha 1, a second preset pretightening force adjustment coefficient alpha 2 and a third preset pretightening force adjustment coefficient alpha 3, wherein Deltar 1 < Deltar2, 1 < alpha 2 < alpha 3, and when the central control processor determines that the temperature fluctuation range of the environment in which the apparatus is located meets a preset standard and that the environmental temperature belongs to the working temperature of the buffer layer or the central control processor determines DeltaR > DeltaR2, the central control processor adjusts pretightening force F of the upper electrode bolt and the lower electrode bolt according to Deltar,
if Deltar is less than or equal to Deltar 1, the central control processor uses alpha 1 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
If Deltar 1 < Deltar2 is less than or equal to Deltar 2, the central control processor uses alpha 2 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
if Deltar > Deltar2, the central control processor uses alpha 3 to adjust the pretightening force F of the upper electrode bolt and the lower electrode bolt;
when the central control processor uses alpha i to adjust the pretightening force of the bolt, i=1, 2 and 3, and the pretightening force after adjustment is marked as F ', F' =F×alpha i.
8. The apparatus according to claim 3, wherein the central control processor is provided with a first preset current through low difference Δ I a1, a second preset current through low difference Δ I a2, a first preset current through high difference Δib1, a second preset current through high difference Δib2, a first preset initial test voltage adjustment coefficient β1, a second preset initial test voltage adjustment coefficient β2, a third preset initial test voltage adjustment coefficient β3, a fourth preset initial test voltage adjustment coefficient γ1, a fifth preset initial test voltage adjustment coefficient γ2 and a sixth preset initial test voltage adjustment coefficient γ3, wherein Δib1 < [ Δia2 ], Δib1 < [ Δ I b2 ], 1 < β1 < β2 < β 3,0.5 < γ3 < γ1, when i.ltoreq.i 1, the central control processor calculates an initial voltage adjustment value Δi and an initial voltage adjustment value Δi0 when determining that the preset current of the buffer layer is low,
If delta I0 is less than or equal to delta I a1, the central control processor uses beta 1 to regulate the initial test voltage;
if delta I a1 < [ delta ] I0 is less than or equal to delta I a2, the central control processor uses beta 2 to regulate the initial test voltage;
if Δi0 >. Δ I a2, the central control processor adjusts the initial test voltage using β3;
when the central control processor uses beta j to adjust the initial test voltage, j=1, 2 and 3, and the adjusted initial test voltage is Vx ', vx' =vx×beta j;
when I is more than I2, the central control processor judges that the current of the buffer layer with preset volume is overlarge, calculates the difference delta I 'between I and I2, adjusts the initial test voltage according to the comparison between delta I' and each preset overlarge difference,
if delta I' is less than or equal to delta I b1, the central control processor uses gamma 1 to adjust the initial test voltage;
if delta I b1 < deltaI' < delta I b2, the central control processor uses gamma 2 to regulate the initial test voltage;
if Δi' > "Δ I b2, the central control processor uses γ3 to adjust the initial test voltage;
when the central control processor uses γk to adjust the initial test voltage, k=1, 2,3, and the adjusted initial test voltage is Vy ', vy' =vx×γk.
9. The semiconductive buffer layer volume resistivity measurement apparatus of claim 1, wherein the upper copper plate and the lower copper plate are of a homogenous unitary structure.
10. The device of claim 5, wherein the central processor calculates the volume resistivity ρ of the buffer layer in the corresponding temperature environment when determining that the buffer layer can meet the use requirement in the corresponding environment temperature, and sets ρ=r×s/L, where S is the area of the measuring electrode, L is the thickness of the buffer layer, and R is the resistance of the buffer layer in the corresponding temperature environment.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109030952A (en) * | 2018-08-09 | 2018-12-18 | 中国电力科学研究院有限公司 | Plug volume resistivity measuring device for insulator |
| CN109557373A (en) * | 2018-12-30 | 2019-04-02 | 南瑞集团有限公司 | A kind of high temperature and pressure lower volume resistivity test system |
| CN111060848A (en) * | 2019-12-31 | 2020-04-24 | 上海电缆研究所有限公司 | Electrical test circuit, evaluation method and processing terminal of semi-conductive buffer layer |
| CN111707911A (en) * | 2020-06-12 | 2020-09-25 | 天津大学 | Cable buffer layer partial discharge testing device capable of controlling temperature and humidity |
| CN114324486A (en) * | 2022-03-16 | 2022-04-12 | 国网天津市电力公司电力科学研究院 | Defect detection method, device and equipment for cable buffer layer and storage medium |
| CN217404404U (en) * | 2021-12-24 | 2022-09-09 | 国网黑龙江省电力有限公司电力科学研究院 | Volume resistivity measuring device for cable buffer layer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107728094B (en) * | 2017-10-23 | 2020-09-29 | 宁德时代新能源科技股份有限公司 | Current calibration coefficient measuring device and method, and current detecting device and method |
-
2022
- 2022-09-14 CN CN202211113912.0A patent/CN115616293B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109030952A (en) * | 2018-08-09 | 2018-12-18 | 中国电力科学研究院有限公司 | Plug volume resistivity measuring device for insulator |
| CN109557373A (en) * | 2018-12-30 | 2019-04-02 | 南瑞集团有限公司 | A kind of high temperature and pressure lower volume resistivity test system |
| CN111060848A (en) * | 2019-12-31 | 2020-04-24 | 上海电缆研究所有限公司 | Electrical test circuit, evaluation method and processing terminal of semi-conductive buffer layer |
| CN111707911A (en) * | 2020-06-12 | 2020-09-25 | 天津大学 | Cable buffer layer partial discharge testing device capable of controlling temperature and humidity |
| CN217404404U (en) * | 2021-12-24 | 2022-09-09 | 国网黑龙江省电力有限公司电力科学研究院 | Volume resistivity measuring device for cable buffer layer |
| CN114324486A (en) * | 2022-03-16 | 2022-04-12 | 国网天津市电力公司电力科学研究院 | Defect detection method, device and equipment for cable buffer layer and storage medium |
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