CN115609469A - Method and system for correcting grinding time and method for manufacturing isolation structure - Google Patents
Method and system for correcting grinding time and method for manufacturing isolation structure Download PDFInfo
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- CN115609469A CN115609469A CN202211512915.1A CN202211512915A CN115609469A CN 115609469 A CN115609469 A CN 115609469A CN 202211512915 A CN202211512915 A CN 202211512915A CN 115609469 A CN115609469 A CN 115609469A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
The invention provides a method and a system for correcting grinding time and a method for manufacturing an isolation structure. The method and the system for correcting the grinding time comprise the steps of firstly obtaining a first grinding time set value of a first wafer ground by a front grinding platform, a second grinding time set value of a second wafer ground by the front grinding platform and the grinding time of a second wafer ground by an nth grinding platform, then calculating the difference between the second grinding time set value and the first grinding time set value to obtain a first time difference, calculating the difference between the grinding time of the second wafer ground by the nth grinding platform and the second grinding time set value to obtain a second time difference, and calculating the grinding time set value of a third wafer ground by the front grinding platform according to the preset removal thickness of the front grinding platform, the current grinding speed and the first and second time differences. Thus, the automatic correction of the grinding time can be realized and the productivity of the grinding equipment can be improved. The manufacturing method of the isolation structure comprises a method for correcting grinding time.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a grinding time correction method, a grinding time correction system and a manufacturing method of an isolation structure.
Background
Among the existing semiconductor processes, a chemical mechanical polishing process (CMP) is a very important process. Taking the fabrication of the isolation structure as an example, an isolation dielectric layer is generally deposited on the wafer, the isolation dielectric layer fills the shallow trench in the wafer and covers the top surface of the wafer, and then the isolation dielectric layer is chemically and mechanically polished by a polishing apparatus to form the isolation structure.
Fig. 1 is a schematic view of a polishing apparatus. As shown in fig. 1, the polishing apparatus has three polishing stations, one translation station 104, and four polishing heads 200. When the grinding equipment is used for grinding the isolation medium layer on the wafer, the wafer is transferred from the conversion platform 104 to the first grinding platform 101, after the grinding of the first grinding platform 101 is finished, the wafer is transferred to the second grinding platform 102, after the grinding of the second grinding platform 102 is finished, the wafer is transferred to the third grinding platform 103, after the grinding of the third grinding platform 103 is finished, the conversion platform 104 is converted again to move out the wafer, and the chemical mechanical grinding treatment on the isolation medium layer is finished.
At present, when the above-mentioned polishing apparatus is used to perform chemical mechanical polishing on an isolation dielectric layer on a wafer, a first polishing platen 101 and a second polishing platen 102 perform polishing operations according to fixed and equal polishing time setting values, and a third polishing platen 103 stops the polishing operations according to an End Point Detection (EPD) method. However, when the wafer is polished in this way, the polishing time of the third polishing platen 103 is greatly different from the polishing time of the other polishing platens (i.e., the first polishing platen 101 and the second polishing platen 102), so that the waiting time of the wafer in the polishing apparatus is long, resulting in low throughput of the polishing apparatus.
Disclosure of Invention
An objective of the present invention is to provide a method and a system for correcting a polishing time, which can improve the productivity of a polishing apparatus. The invention also provides a manufacturing method of the isolation structure.
In order to achieve the above object, an aspect of the present invention provides a method for correcting a polishing time. The method for correcting the grinding time is used for correcting and setting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer greater than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as front grinding platforms, the set value of the grinding time of each front grinding platform for grinding the same wafer is equal, and the method for correcting the grinding time comprises the following steps:
s1, acquiring a first grinding time set value of a first wafer ground by a front grinding platform, a second grinding time set value of a second wafer ground by the front grinding platform and grinding time of the second wafer ground by an nth grinding platform, wherein the first wafer is ground before the second wafer;
s2, calculating the difference between the second grinding time set value and the first grinding time set value to obtain a first time difference, and calculating the difference between the grinding time of the nth grinding platform for grinding the second wafer and the second grinding time set value to obtain a second time difference; calculating a third grinding time set value according to the preset removal thickness of the front grinding platform, the current grinding speed of the front grinding platform, the first time difference and the second time difference; and
and S3, setting the third grinding time set value as the grinding time set value of the previous grinding platform for grinding the third wafer.
Optionally, the correction method includes performing steps S1 to S3 in a loop, so that the polishing time for polishing subsequent wafers by the n polishing platforms is balanced; in step S2, the third polishing time set value is calculated using the product of the second time difference and a set correction coefficient, which is smaller than 1.
Optionally, the first wafer is an m-2n wafer, the second wafer is an m-n wafer, the third wafer is an m wafer, and m is a positive integer greater than n; the third grinding time set value T m Satisfies the formula:
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
Alternatively, when m-2n>At 0, Δ T 1 =T m-n -T m-2n Wherein, T m-n A second polishing time setting, T, for the front polishing platen to polish the second wafer m-2n A first polishing time setting value for the front polishing platen to polish the first wafer; when m-2n is less than or equal to 0, delta T 1 =0。
Optionally, the current polishing rate of the previous polishing platen is determined according to the initial polishing rate of the previous polishing platen and the used time of the previous polishing platen after maintenance, and the current polishing rate changes linearly with the extension of the used time.
Optionally, the initial grinding rate is obtained by a test strip test after the grinding apparatus is maintained.
Optionally, the first to (n-1) th polishing platforms perform polishing operations according to the corresponding polishing time setting value, and the nth polishing platform stops the polishing operations according to an end point detection method.
In another aspect, the present invention provides a system for correcting polishing time. The correcting system of the grinding time is used for correcting and setting the grinding time of a grinding platform in the grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer greater than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as front grinding platforms, the grinding time set value of each front grinding platform for grinding the same wafer is equal, and the correcting system of the grinding time comprises:
an obtaining unit, configured to obtain a first polishing time setting value for the previous polishing platform to polish a first wafer, a second polishing time setting value for the previous polishing platform to polish a second wafer, and a polishing time for the nth polishing platform to polish the second wafer;
a calculating unit, configured to calculate a difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, and calculate a difference between the polishing time for polishing the second wafer by the nth polishing platen and the second polishing time setting value to obtain a second time difference; calculating a third grinding time set value according to the preset removal thickness of the previous grinding platform, the current grinding speed of the previous grinding platform, the first time difference and the second time difference; and
and the control unit is used for setting the third grinding time set value as a grinding time set value of the front grinding platform for grinding the third wafer.
Optionally, the first wafer is an m-2n wafer, the second wafer is an m-n wafer, the third wafer is an m wafer, and m is a positive integer greater than n; the third grinding time set value T m Satisfies the formula:
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
The invention also provides a manufacturing method of the isolation structure. The manufacturing method of the isolation structure comprises the step of carrying out chemical mechanical polishing on isolation medium layers on a plurality of wafers by using polishing equipment to form the isolation structure on the plurality of wafers, wherein the polishing equipment comprises n polishing platforms, n is a positive integer larger than or equal to 2, the first polishing platform to the (n-1) th polishing platform are all called as previous polishing platforms, the polishing time set values of the previous polishing platforms for polishing the same wafer are equal, and in the process of sequentially polishing the plurality of wafers by using the n polishing platforms of the polishing equipment, the polishing time set values of the previous polishing platforms are corrected by using the polishing time correction method.
The method and the system for correcting the grinding time are used for correcting and setting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer greater than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are called as front grinding platforms, the grinding time set value of each front grinding platform for grinding the same wafer is equal, the method and the system for correcting the grinding time firstly obtain a first grinding time set value of the front grinding platform for grinding the first wafer, a second grinding time set value of the front grinding platform for grinding the second wafer and the grinding time of the nth grinding platform for grinding the second wafer; then calculating the difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, calculating the difference between the polishing time of the nth polishing platform for polishing the second wafer and the second polishing time setting value to obtain a second time difference, and calculating a third polishing time setting value according to the preset removal thickness of the previous polishing platform, the current polishing rate of the previous polishing platform, the first time difference and the second time difference; and then, the third grinding time set value is set as the grinding time set value of the previous grinding platform for grinding the third wafer, so that the automatic correction of the grinding time can be realized, the time difference between the grinding time set value of the previous grinding platform and the grinding time of the nth grinding platform is reduced, the grinding times of the n grinding platforms can be balanced, the waiting time of the wafer in the grinding equipment is further reduced, and the capacity of the grinding equipment is improved.
In the manufacturing method of the isolation structure, the isolation medium layers on the wafers are chemically and mechanically ground by using the grinding equipment to form the isolation structure on the wafers, wherein in the process of sequentially grinding the wafers by using n grinding platforms of the grinding equipment, the set value of the grinding time for grinding the same wafer by each front grinding platform is equal, and the set value of the grinding time for grinding the front grinding platform is adjusted by using the correction method of the grinding time, so that the productivity of the grinding equipment can be improved, and the production time of the isolation structure can be shortened.
Drawings
Fig. 1 is a schematic view of a polishing apparatus.
FIG. 2 is a flowchart illustrating a method for correcting polishing time according to an embodiment of the present invention.
FIG. 3 is a graph illustrating the current polishing rate of a previous polishing platen as a function of elapsed time after platen maintenance in accordance with one embodiment of the present invention.
FIG. 4 is a schematic diagram of a system for correcting polishing time according to an embodiment of the present invention.
Description of the reference numerals: 101-a first grinding table; 102-a second polishing platen; 103-a third polishing platen; 104-a conversion platform; 200-grinding head; 10-an acquisition unit; 20-a computing unit; 30-a control unit.
Detailed Description
The method and system for correcting the polishing time and the method for fabricating the isolation structure according to the present invention are further described in detail with reference to the accompanying drawings and the specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
In order to improve the productivity of the grinding equipment, the invention provides a method for correcting the grinding time, which is used for correcting and setting the grinding time of a grinding platform in the grinding equipment, wherein the grinding equipment comprises n grinding platforms, n is a positive integer greater than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the n-1 th grinding platform are all called as previous grinding platforms, and the set values of the grinding time for grinding the same wafer by each previous grinding platform are equal. FIG. 2 is a flowchart illustrating a method for correcting polishing time according to an embodiment of the present invention. As shown in fig. 2, the method for correcting the grinding time includes:
s1, acquiring a first grinding time set value of a front grinding platform for grinding a first wafer, a second grinding time set value of the front grinding platform for grinding a second wafer and grinding time of an nth grinding platform for grinding the second wafer, wherein the first wafer is ground before the second wafer;
s2, calculating the difference between the second grinding time set value and the first grinding time set value to obtain a first time difference, and calculating the difference between the grinding time of the nth grinding platform for grinding the second wafer and the second grinding time set value to obtain a second time difference; calculating a third grinding time set value according to the preset removal thickness of the previous grinding platform, the current grinding speed of the previous grinding platform, the first time difference and the second time difference; and
and S3, setting the set value of the grinding time for grinding the third wafer by the front grinding platform as the set value of the third grinding time.
In this embodiment, the first to (n-1) th polishing stations perform polishing operations according to the corresponding polishing time setting values, and the nth polishing station stops the polishing operations according to an end point detection method (EPD).
In order to improve the adjustment accuracy of the polishing time setting value of the previous polishing platen, in this embodiment, the method for correcting the polishing time includes performing steps S1 to S3 in a loop manner, so that the polishing time for polishing the subsequent wafers by the n polishing platens is equalized. In step S2, the third polishing time setting value is calculated by using the product of the second time difference and a set correction factor, wherein the set correction factor is smaller than 1, for example, the set correction factor is 0.3, 0.4, 0.5 or 0.6.
Specifically, the first wafer can be the m-2n wafer, the second wafer can be the m-n wafer, the third wafer is the m wafer, and m is a positive integer greater than n; the third grinding time set value T m The formula one is satisfied:
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
The predetermined removal thickness Amount of the preceding polishing platen may be set according to a product, and for one product, amount may be a constant value. For example, the predetermined removal thickness Amount of the previous polishing platen may be a removal thickness of the previous polishing platen for a wafer when a difference between a polishing time setting value of the previous polishing platen for polishing a wafer and a polishing time of the nth polishing platen for polishing the wafer is smaller than a predetermined threshold in a previous batch process of polishing by the previous polishing platen. Further, in selecting the previous batch, the batch that is polished by the previous polishing platen with the initial polishing rate being equal to the average value of the historical initial polishing rates can be selected, which helps to equalize the polishing time of the n polishing platens as soon as possible. A (c)
It should be noted that, if the predetermined removal thickness Amount of the previous polishing platen is too large, the wafer may have reached the polishing endpoint after being polished by each previous polishing platen, and at this time, when the wafer is transferred to the nth polishing platen for polishing, the endpoint detection method will fail (for example, the detection current will continuously decrease and not reach the vertex), resulting in over-polishing of the wafer and yield loss. Therefore, when the predetermined removal thickness Amount is set, it is not preferable to set it too large to avoid the end point detection method from being failed.
When m-2n is used>At 0, Δ T 1 =T m-n -T m-2n Wherein, T m-n A second polishing time setting, T, for the front polishing platen to polish the second wafer m-2n And setting a first grinding time for the front grinding platform to grind the first wafer. When m-2n is less than or equal to 0, delta T 1 =0, i.e. the m-2 n-th wafer is not present at this time, the third grinding time setpoint T m The formula II is satisfied:
。
ΔT 2 =t n -T m-n wherein, t n A polishing time, T, for the nth polishing platen to polish the second wafer m-n And setting a second grinding time for the front grinding platform to grind the second wafer.
It should be appreciated that for the first n wafers, the polishing time setting for the front polishing platen may be based on the formula T 0 Calculation of = Amount ÷ PR; wherein, T 0 Setting a grinding time value for grinding the front n wafers by the front grinding platform, wherein Amount is a preset removal thickness of each front grinding platform; PR is the current polishing rate of each preceding polishing platen. When n is small, it can be said that the current polishing rate of the preceding polishing platen is not changed, and thus T is equal to the first n pieces 0 May be a certain value. Of course, the current polishing rate of the previous polishing platen may be recalculated after polishing a wafer, so that the previous polishing rate is calculatedThe polishing time setting values of n wafers before polishing by the polishing platform are different.
The current polishing rate PR of the front polishing platen may be determined according to an initial polishing rate of the front polishing platen and a used time after the front polishing platen is maintained. FIG. 3 is a graph illustrating the current polishing rate of a previous polishing platen as a function of elapsed time after platen maintenance in accordance with one embodiment of the present invention. As shown in fig. 3, the current polishing rate of the front polishing platen varies linearly with the elapsed time of the front polishing platen after service.
Specifically, referring to fig. 3, when the maintenance of the front polishing platen (specifically, the polishing pad) is finished, i.e. the used time PL after the maintenance of the front polishing platen is equal to 0, the current polishing rate PR of the front polishing platen is equal to the initial polishing rate PR thereof 0 . In the first 5 hours (H) after maintenance, i.e. the used time PL after the previous polishing platform maintenance is less than or equal to 5H, when the change speed of the current polishing rate PR is faster, PR = PR 0 +PL×k 1 ，PR 0 Is the initial polishing rate, k 1 The slope of the straight line when PL is less than or equal to 5H; after 5 hours after the maintenance, i.e. when the used time PL after the previous polishing platen maintenance is greater than 5H, the rate of change of the lower polishing rate PR is slower, when PR = PR 1 +PL×k 2 ，PR 1 The polishing rate k corresponding to the elapsed time of 5H after the previous polishing platen is maintained 2 Is PL>Slope of the line at 5H. In this embodiment, when the used time after the maintenance of the front grinding platen is 45H, the lower grinding rate is PR 2 . In this embodiment, the service life of the polishing pad of the previous polishing platen may be 45H.
It should be noted that the initial polishing rate PR of the front polishing platen 0 Can be obtained by a test strip test. In one embodiment, a plurality of test data may be utilized to obtain a relationship between the current polishing rate and the initial polishing rate and the elapsed time after the polishing platen is serviced, and a model of the current polishing rate of the previous polishing platen may be established, the model including the current polishing rate of the previous polishing platen and the initial polishing rate and the elapsed time after the previous polishing platen was servicedThe current polishing rate of the previous polishing platen can be obtained by inputting the initial polishing rate and the used time of the previous polishing platen into the variation model, so that the current polishing rate of the previous polishing platen can be obtained quickly.
As an example, referring to fig. 1, the polishing apparatus includes three polishing platforms (i.e., a first polishing platform 101, a second polishing platform 102, and a third polishing platform 103), when a first wafer is transferred to the third polishing platform 103, a second wafer is transferred to the second polishing platform 102, and a third wafer is transferred to the first polishing platform 101, so that the polishing time setting for polishing a fourth wafer by the first polishing platform 101 and the second polishing platform 102 can be adjusted by the polishing time for polishing the first wafer by the three polishing platforms.
For example, the polishing time setting values of the first polishing platen 101 and the second polishing platen 102 for polishing the first wafer are both T 1 The polishing time t for the third polishing platen 103 to polish the first wafer 31 When m =4,n =3,m-2n<0, the polishing time setting T for the front polishing platen (the first polishing platen 101 and the second polishing platen 102) to polish the fourth wafer can be calculated according to the formula two 4 ，T 4 =Amount÷PR+(t 31 -T1)÷A×B。
As an example, the polishing rate ratio of the third polishing platform 103 to the first polishing platform 101 and the second polishing platform 102 is 1.25, and the compensation factor a =1.25+2=3.5; setting the correction coefficient B to be 0.4; thus T 4 =Amount÷PR+(t 31 -T1) ÷ 3.5X 0.4. The polishing rate ratio of the third polishing platform 103 to the first polishing platform 101 and the second polishing platform 102 can be obtained by performing linear fitting on data obtained by testing a plurality of test strips. But not limited thereto, the compensation coefficient a and the setting correction coefficient B may be set according to actual conditions.
Then, for example, the third polishing platen 103 polishes the fourth wafer for a polishing time t 34 When m =7,n =3, the polishing time set value of the previous polishing platen for polishing the seventh wafer is T 7 According to the formula one, T 7 =Amount÷PR+(T 4 -T 1 )+(t 34 -T 4 )÷A×B。
It should be noted that, in the process of performing chemical mechanical polishing on a plurality of wafers by using the polishing apparatus, the polishing time for polishing the first wafer by using the three polishing platforms may be adjusted by setting the polishing time for polishing the fourth wafer by using the first polishing platform 101 and the second polishing platform 102; then, adjusting the set value of the grinding time for grinding the fifth wafer by the first grinding platform 101 and the second grinding platform 102 according to the grinding time for grinding the second wafer by the three grinding platforms; then, adjusting the set value of the grinding time for grinding the sixth wafer by the first grinding platform 101 and the second grinding platform 102 according to the grinding time for grinding the third wafer by the three grinding platforms; and then adjusting the set value of the grinding time for grinding the fourth wafer by the three grinding platforms and the set value of the grinding time for grinding the first wafer by the first grinding platform 101 and the second grinding platform 102, so that the grinding time for grinding the subsequent wafers by the three grinding platforms is more balanced, the waiting time of the wafers in the grinding equipment is reduced, and the productivity of the grinding equipment is improved.
In the same maintenance cycle, for the two batches before and after the continuous production with the same specification (for example, the material to be ground and the thickness to be removed are the same), the final grinding time setting value of the batch before the grinding by the previous grinding table can be used as the initial grinding time value of the batch after the grinding, that is, the two batches before and after the grinding are used as one batch to continuously calculate and correct the grinding time setting value of the previous grinding table, and for the next batch, the grinding time of the previous grinding table and the grinding time of the nth grinding table can be equalized in a short time.
The method for correcting the grinding time is used for correcting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer larger than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as a front grinding platform, the grinding time set value of each front grinding platform for grinding the same wafer is equal, the method for correcting the grinding time comprises the steps of firstly obtaining a first grinding time set value of the front grinding platform for grinding a first wafer, a second grinding time set value of the front grinding platform for grinding a second wafer and the grinding time of the nth grinding platform for grinding the second wafer, and grinding the first wafer before the second wafer; then calculating the difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, calculating the difference between the polishing time of the nth polishing platform for polishing the second wafer and the second polishing time setting value to obtain a second time difference, and calculating a third polishing time setting value according to the preset removal thickness of the previous polishing platform, the current polishing rate of the previous polishing platform, the first time difference and the second time difference; and then, setting the third grinding time set value as the grinding time set value of the previous grinding platform for grinding the third wafer, so that the automatic correction of the grinding time can be realized, the time difference between the grinding time set value of the previous grinding platform and the grinding time of the nth grinding platform is reduced, the grinding times of the n grinding platforms can be balanced, the waiting time of the wafer in the grinding equipment is further reduced, and the capacity of the grinding equipment is improved.
The embodiment also provides a grinding time correction system, and the grinding time correction system can execute the grinding time correction method when in operation. Specifically, the system for correcting the polishing time is used for correcting the polishing time of polishing platforms in polishing equipment, the polishing equipment comprises n polishing platforms, n is a positive integer greater than or equal to 2, when the polishing equipment is used for carrying out chemical mechanical polishing on a plurality of wafers, each wafer sequentially passes through the n polishing platforms, the first polishing platform to the (n-1) th polishing platform are all called as previous polishing platforms, and the polishing time set values of the previous polishing platforms for polishing the same wafer are equal. FIG. 4 is a schematic diagram of a system for correcting polishing time according to an embodiment of the present invention. As shown in fig. 4, the system for correcting the grinding time includes an acquisition unit 10, a calculation unit 20, and a control unit 30.
The obtaining unit 10 is configured to obtain a first polishing time setting value for the previous polishing platen to polish the first wafer, a second polishing time setting value for the previous polishing platen to polish the second wafer, and a polishing time for the nth polishing platen to polish the second wafer. For example, the obtaining unit 10 obtains the set values of the polishing time for the previous polishing platen to polish the first wafer and the second wafer and the polishing time for the nth polishing platen to polish the second wafer from the polishing apparatus.
The calculating unit 20 is configured to calculate a difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, and calculate a difference between the polishing time for the nth polishing platen to polish the second wafer and the second polishing time setting value to obtain a second time difference; and calculating a third grinding time set value according to the preset removal thickness of the previous grinding platform, the current grinding speed of the previous grinding platform, the first time difference and the second time difference.
The control unit 30 is configured to set the third polishing time setting value as a polishing time setting value for the previous polishing platen to polish the third wafer.
In order to improve the adjustment accuracy of the polishing time setting value of the previous polishing platen, the obtaining unit 10, the calculating unit 20, and the control unit 30 may sequentially and cyclically operate to modify the polishing time setting value of the previous polishing platen for multiple times, so as to balance the polishing time for polishing the subsequent wafers by the n polishing platens. The calculating unit 20 calculates the third polishing time setting value by using a product of the second time difference and a set correction coefficient, wherein the set correction coefficient is smaller than 1, for example, 0.3, 0.4, 0.5 or 0.6.
Specifically, the first wafer can be the m-2n wafer, the second wafer can be the m-n wafer, the third wafer is the m wafer, and m is a positive integer greater than n; the calculation unit 20 calculates theThird grinding time set value T m 。
The first formula is as follows:
；
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
In addition, when m-2n>At 0, Δ T 1 =T m-n -T m-2n Wherein, T m-n A second polishing time setting, T, for the front polishing platen to polish the second wafer m-2n A first polishing time setting value for the front polishing platen to polish the first wafer. When m-2n is less than or equal to 0, delta T 1 =0, that is, there is no m-2n slice at this time, the formula one can be simplified to the formula two:
。
the system for correcting the grinding time is used for correcting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer larger than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as previous grinding platforms, the set value of the grinding time for grinding the same wafer by each previous grinding platform is equal, and the system for correcting the grinding time comprises an obtaining unit 10, a calculating unit 20 and a control unit 30. Firstly, an obtaining unit 10 obtains a first set value of polishing time for the previous polishing platen to polish a first wafer, a second set value of polishing time for the previous polishing platen to polish a second wafer, and polishing time for the nth polishing platen to polish the second wafer, where the first wafer is polished before the second wafer; then, the calculating unit 20 calculates a difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, calculates a difference between the polishing time of the nth polishing platen for polishing the second wafer and the second polishing time setting value to obtain a second time difference, and calculates a third polishing time setting value according to the predetermined removal thickness of the previous polishing platen, the current polishing rate of the previous polishing platen, the first time difference, and the second time difference; then, the control unit 30 sets the third polishing time setting value as the polishing time setting value for the previous polishing platen to polish the third wafer, so that the polishing time can be automatically corrected, and the time difference between the polishing time setting value of the previous polishing platen and the polishing time of the nth polishing platen is reduced, so that the polishing times of the n polishing platens are balanced, which is helpful for reducing the waiting time of the wafer in the polishing apparatus and improving the productivity of the polishing apparatus.
The embodiment also provides a manufacturing method of the isolation structure, the manufacturing method utilizes a grinding device to perform chemical mechanical grinding on isolation medium layers on a plurality of wafers so as to form the isolation structure on the plurality of wafers, the grinding device comprises n grinding platforms, n is a positive integer greater than or equal to 2, the first grinding platform to the n-1 th grinding platform are all called as previous grinding platforms, the grinding time set value of each previous grinding platform for grinding the same wafer is equal, wherein in the process of sequentially grinding the plurality of wafers by utilizing the n grinding platforms of the grinding device, the grinding time set value of the previous grinding platform is corrected by utilizing the correction method of the grinding time, so that the productivity of the grinding device can be improved, and the production time of the isolation structure can be shortened.
The isolation dielectric layer may include silicon oxide. The isolation structure may be a shallow trench isolation Structure (STI).
It should be understood that the present specification adopts a progressive manner for description, the following description of the system for correcting polishing time and the method for manufacturing the isolation structure focuses on the differences between the method for correcting polishing time and the method for manufacturing the isolation structure, and the same or similar parts may be referred to each other, and thus are not described again.
The system for correcting grinding time of the present application may include a plurality of computers, hardware, devices, and the like, which are interconnected by a communication unit such as a network, or include a single computer, hardware, or device, and the like, which has a process of implementing the present application. The computer may include a Central Processing Unit (CPU), memory, and input and output components such as a keyboard, mouse, touch screen, display, and the like. "module" or "unit" as used herein generally refers to a component of the present application, such as logically separable software (computer program), hardware, or an equivalent component. For example, the acquisition unit 10, the calculation unit 20 and the control unit 30 in the system for correcting the grinding time may be combined and implemented in one unit, or any one of the units may be divided into a plurality of units, or at least part of the functions of one or more of the units may be combined with at least part of the functions of other units and implemented in one unit. According to the embodiment of the present invention, at least one of the respective units is generally implemented in the form of a software program in cooperation with hardware, however, all (or a part thereof) may also be implemented in the form of electronic hardware or a software program. Whether implemented in software or hardware, the details of which are not repeated in this specification since those skilled in the electronic and software arts can implement them.
Furthermore, the terms "first," "second," and "third" are used herein for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, features defined as "first," "second," and "third" may explicitly or implicitly include one or at least two of the features unless the content clearly dictates otherwise.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (10)
1. A method for correcting grinding time is used for correcting and setting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer greater than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as front grinding platforms, and the grinding time set values of the front grinding platforms for grinding the same wafer are equal, and the method for correcting the grinding time comprises the following steps:
s1, acquiring a first grinding time set value of a first wafer ground by a front grinding platform, a second grinding time set value of a second wafer ground by the front grinding platform and grinding time of the second wafer ground by an nth grinding platform, wherein the first wafer is ground before the second wafer;
s2, calculating the difference between the second grinding time set value and the first grinding time set value to obtain a first time difference, and calculating the difference between the grinding time of the nth grinding platform for grinding the second wafer and the second grinding time set value to obtain a second time difference; calculating a third grinding time set value according to the preset removal thickness of the front grinding platform, the current grinding speed of the front grinding platform, the first time difference and the second time difference; and
and S3, setting the third grinding time set value as a grinding time set value of the front grinding platform for grinding the third wafer.
2. The method according to claim 1, wherein the method comprises performing steps S1 to S3 in a loop so that the polishing time for polishing subsequent wafers by the n polishing platforms is equalized; in step S2, the third polishing time set value is calculated using the product of the second time difference and a set correction coefficient, which is smaller than 1.
3. The method for correcting polishing time according to claim 1, wherein the first wafer is an m-2n wafer, the second wafer is an m-n wafer, the third wafer is an m wafer, and m is a positive integer greater than n; the third grinding time set value T m Satisfies the formula:
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
4. The method for correcting grinding time according to claim 3, wherein m-2n is the number of m-2n>At 0, Δ T 1 =T m-n -T m-2n Wherein, T m-n A second polishing time setting, T, for the front polishing platen to polish the second wafer m-2n A first polishing time setting value for the front polishing platen to polish the first wafer; when m-2n is less than or equal to 0, delta T 1 =0。
5. The method of claim 1, wherein the current polishing rate of the previous polishing platen is determined according to an initial polishing rate of the previous polishing platen and a used time of the previous polishing platen after maintenance, and the current polishing rate varies linearly with the extended used time.
6. The method for correcting grinding time according to claim 5, wherein the initial grinding rate is obtained by a test piece test after the grinding apparatus is maintained.
7. The method for correcting polishing time according to claim 1, wherein the polishing operations of the first polishing platen to the n-1 th polishing platen are performed according to the corresponding polishing time setting value, and the polishing operation of the n-th polishing platen is stopped according to an end point detection method.
8. A correction system of grinding time is used for correcting and setting the grinding time of a grinding platform in grinding equipment, the grinding equipment comprises n grinding platforms, n is a positive integer which is more than or equal to 2, when the grinding equipment is used for carrying out chemical mechanical grinding on a plurality of wafers, each wafer sequentially passes through the n grinding platforms, the first grinding platform to the (n-1) th grinding platform are all called as front grinding platforms, and the set value of the grinding time for grinding the same wafer by each front grinding platform is equal, and the correction system of the grinding time is characterized by comprising:
an obtaining unit, configured to obtain a first polishing time setting value for the previous polishing platform to polish a first wafer, a second polishing time setting value for the previous polishing platform to polish a second wafer, and a polishing time for the nth polishing platform to polish the second wafer;
a calculating unit, configured to calculate a difference between the second polishing time setting value and the first polishing time setting value to obtain a first time difference, and calculate a difference between the polishing time for polishing the second wafer by the nth polishing platen and the second polishing time setting value to obtain a second time difference; calculating a third grinding time set value according to the preset removal thickness of the previous grinding platform, the current grinding speed of the previous grinding platform, the first time difference and the second time difference; and
and the control unit is used for setting the third grinding time set value as the grinding time set value of the previous grinding platform for grinding the third wafer.
9. The system for correcting grinding time according to claim 8, wherein the first wafer is an m-2n wafer, the second wafer is an m-n wafer, the third wafer is an m wafer, and m is a positive integer greater than n; the third grinding time set value T m Satisfies the formula:
wherein, amount is the preset removal thickness of each front grinding platform; PR is the current polishing rate of each of the preceding polishing platforms; delta T 1 Is the first time difference; delta T 2 Is the second time difference; a is a compensation coefficient set according to the grinding rate ratio of the nth grinding platform to the previous grinding platform, and B is a set correction coefficient.
10. A manufacturing method of an isolation structure is characterized in that a grinding device is used for carrying out chemical mechanical grinding on isolation medium layers on a plurality of wafers to form the isolation structure on the plurality of wafers, the grinding device comprises n grinding platforms, n is a positive integer larger than or equal to 2, the first grinding platform to the (n-1) th grinding platform are all called as front grinding platforms, the grinding time set value of each front grinding platform for grinding the same wafer is equal, and in the process of sequentially grinding the plurality of wafers by using the n grinding platforms of the grinding device, the grinding time set value of each front grinding platform is corrected by using the correction method of the grinding time according to any one of claims 1 to 7.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005052906A (en) * | 2003-08-06 | 2005-03-03 | Seiko Epson Corp | Polisher, polishing method, polishing time calculation method, and semiconductor device manufacturing method |
| CN1670925A (en) * | 2004-03-19 | 2005-09-21 | 台湾积体电路制造股份有限公司 | CMP process control method |
| JP2006032764A (en) * | 2004-07-20 | 2006-02-02 | Nikon Corp | Polishing control method, polishing device, and semiconductor device manufacturing method |
| CN101116952A (en) * | 2006-08-01 | 2008-02-06 | 上海华虹Nec电子有限公司 | Chemical mechanism grinding duration control method |
| CN101209539A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding time control |
| CN101412202A (en) * | 2007-10-16 | 2009-04-22 | 中芯国际集成电路制造(上海)有限公司 | Method for determining grinding time in chemico-mechanical polishing process |
| CN102044468A (en) * | 2009-10-23 | 2011-05-04 | 无锡华润上华半导体有限公司 | Method for grinding surface of shallow trench isolation structure |
| US20120053717A1 (en) * | 2010-08-30 | 2012-03-01 | Alain Duboust | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
| CN102380815A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding system |
-
2022
- 2022-11-30 CN CN202211512915.1A patent/CN115609469B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005052906A (en) * | 2003-08-06 | 2005-03-03 | Seiko Epson Corp | Polisher, polishing method, polishing time calculation method, and semiconductor device manufacturing method |
| CN1670925A (en) * | 2004-03-19 | 2005-09-21 | 台湾积体电路制造股份有限公司 | CMP process control method |
| JP2006032764A (en) * | 2004-07-20 | 2006-02-02 | Nikon Corp | Polishing control method, polishing device, and semiconductor device manufacturing method |
| CN101116952A (en) * | 2006-08-01 | 2008-02-06 | 上海华虹Nec电子有限公司 | Chemical mechanism grinding duration control method |
| CN101209539A (en) * | 2006-12-27 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Method for improving grinding time control |
| CN101412202A (en) * | 2007-10-16 | 2009-04-22 | 中芯国际集成电路制造(上海)有限公司 | Method for determining grinding time in chemico-mechanical polishing process |
| CN102044468A (en) * | 2009-10-23 | 2011-05-04 | 无锡华润上华半导体有限公司 | Method for grinding surface of shallow trench isolation structure |
| US20120053717A1 (en) * | 2010-08-30 | 2012-03-01 | Alain Duboust | Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing |
| CN102380815A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding system |
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