CN115598923B - Photomask optimization method and device and electronic equipment - Google Patents

Photomask optimization method and device and electronic equipment Download PDF

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CN115598923B
CN115598923B CN202211587680.2A CN202211587680A CN115598923B CN 115598923 B CN115598923 B CN 115598923B CN 202211587680 A CN202211587680 A CN 202211587680A CN 115598923 B CN115598923 B CN 115598923B
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objective function
movement amount
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CN115598923A (en
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Huaxincheng Hangzhou Technology Co ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Abstract

The invention discloses a photomask optimization method and device and electronic equipment. The photomask optimization method provided by the invention forms a composite objective function by weighting and combining a plurality of objective functions corresponding to a plurality of objective parameters comprising process variation bandwidth, optimally solves the composite objective function by combining constraint conditions, obtains the target movement amount corresponding to the optimal solution meeting the constraint conditions, and moves the corresponding segmentation unit according to the target movement amount, so that the optimized photoetching imaging graph optimizes the process window and the imaging quality to the maximum extent, the OPC final result of the high-end chip photoetching process is more reasonable, and the accuracy is higher.

Description

Photomask optimization method and device and electronic equipment
Technical Field
The invention relates to the technical field of semiconductor design and manufacture, in particular to a photomask optimization method and device and electronic equipment.
Background
The photoetching technology is a core process in the chip manufacturing process, and the improvement of the photoetching technology has important significance for the development of integrated circuits. Before the photolithography process is started, the design pattern is first copied to the reticle by a specific apparatus, and then light of a specific wavelength is generated by the photolithography apparatus to copy the design pattern on the reticle onto a wafer on which chips are produced. However, the nonlinear effects in the optical system, the reticle and the photoresist system may cause a pattern distortion phenomenon during the process of transferring the design pattern to the wafer, and an optical proximity effect may cause a failure of the whole manufacturing technology if the pattern distortion phenomenon is not eliminated.
The existing mask pattern optimization method mainly adopts Optical Proximity Correction (OPC for short). OPC techniques maximize the reduction of optical proximity effects due to optical and other nonlinear effects by pre-lithographic processing of reticles. However, the existing OPC technology generally considers only the problem of pattern transfer distortion under an ideal condition on a two-dimensional plane based on Edge Placement Error (EPE) or Critical Dimension (CD) as an objective function, and does not consider the influence of changes such as lithography condition shift in lithography on OPC accuracy.
With the development of high-end chips, the accuracy and precision of OPC needs to be further improved in order to optimize the process window and imaging quality of the high-end chips.
Disclosure of Invention
The invention aims to provide a photomask optimization method and device, which are used for solving the technical problem that the influence of the change of photoetching condition deviation and the like on OPC precision is not considered in the existing OPC technology, improving the OPC precision and accuracy and optimizing the imaging quality and process window to the maximum extent.
In order to achieve the above object, the present invention provides a photomask optimization method, comprising the steps of: acquiring an original layout to be optimized, segmenting an edge to be optimized on the original layout, and setting an initial movement amount of each segmentation unit; setting a constraint condition and a plurality of target parameters based on the original layout, wherein the target parameters at least comprise process variation bandwidth; establishing a composite objective function based on a plurality of the objective parameters; performing optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and acquiring a target movement amount corresponding to an optimal solution meeting the constraint condition; and moving the corresponding segmentation unit according to the target movement amount.
In order to achieve the above object, the present invention further provides a photomask optimizing apparatus, comprising: the first acquisition module is used for acquiring an original layout to be optimized, segmenting an edge to be optimized on the original layout, and setting an initial movement amount of each segmentation unit; the setting module is used for setting constraint conditions and a plurality of target parameters based on the original layout, and the target parameters at least comprise process variation bandwidth; an establishing module for establishing a composite objective function based on a plurality of the objective parameters; a second obtaining module, configured to perform an optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and obtain a target movement amount corresponding to an optimal solution that meets the constraint condition; and the moving module is used for moving the corresponding segmentation unit according to the target movement amount.
To achieve the above object, the present invention further provides an electronic device, which includes a memory, a processor, and a computer executable program stored in the memory and running on the processor, wherein the processor executes the computer executable program to implement the steps of the photomask optimization method according to the present invention.
According to the photomask optimization method and device, the composite objective function is formed by weighted combination of a plurality of objective functions corresponding to a plurality of objective parameters comprising process variation bandwidth, the composite objective function is optimally solved by combining constraint conditions, the objective movement amount corresponding to the optimal solution meeting the constraint conditions is obtained, and the corresponding segmentation unit is moved according to the objective movement amount, so that the optimized photoetching imaging graph optimizes the process window and the imaging quality to the maximum extent, the OPC final result of the high-end chip photoetching process is more reasonable, and the accuracy is higher.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a flowchart of a method for optimizing a photomask according to an embodiment of the present invention;
fig. 2 is a schematic diagram of segmentation of an edge to be optimized on an original layout according to an embodiment of the present invention;
fig. 3 is a block diagram of a photomask optimization apparatus according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the invention provides a photomask optimization method.
Referring to fig. 1 to fig. 2, fig. 1 is a flowchart of a photomask optimization method according to an embodiment of the present invention, and fig. 2 is a schematic diagram of an edge to be optimized on an original layout according to an embodiment of the present invention.
As shown in fig. 1, the method of this embodiment includes the following steps: s11, obtaining an original layout to be optimized, segmenting an edge to be optimized on the original layout, and setting an initial movement amount of each segmentation unit; s12, setting constraint conditions and a plurality of target parameters based on the original layout; s13, establishing a composite objective function based on the constraint condition and the target parameters; s14, based on preset parameter adjusting boundaries and optimization conditions, carrying out optimization solution on the composite objective function according to the initial movement amount and the constraint conditions, and obtaining a target movement amount corresponding to an optimal solution meeting the constraint conditions; and S15, moving the cutting unit according to the target movement amount.
And S11, acquiring an original layout to be optimized, segmenting the edge to be optimized on the original layout, and setting the initial movement amount of each segmentation unit. Specifically, the edge to be optimized may be segmented on the original layout following the reticle manufacturing rule, and the initial movement amount of each segmentation unit may be set.
As shown in fig. 2, the solid contour line represents a simulated edge 201 of the exposed lithography image 20 calculated by simulation using OPC software, the dotted contour line represents a design edge 202 of the initially designed lithography image 20, the circle on the dotted contour line represents a grid point 203 on which the edge can be placed, and the portion between every two grid points 203 is a slicing unit. Setting an initial movement x of each slicing unit 1 ，x 2 ，…，x n N is the total number of the segmentation units; each movement (up-down movement or left-right movement) of each segmentation unit is a parameter adjusting variable; subsequently, the final target movement amount d of each segmentation unit is obtained by adopting the optimization method provided by the invention 1 ，d 2 ，…，d n I.e., as the lithographic imaging pattern 20 is moved. Edge placement error is a lithography software replicaThe difference between the true post-exposure lithographic image pattern edge and the design pattern edge, i.e., by simulating edge 201 and design edge 202, can be calculated for each x i Corresponding edge placement error (i.e., EPE (x) i ) ，1<=i<=n）。
Regarding step S12, constraint conditions and a plurality of target parameters are set based on the original layout, where the target parameters at least include a Process Variation Band (PVBAND). Specifically, a plurality of target parameters can be selected based on the original layout according to the quality requirement of the photoetching imaging graph so as to establish an objective function needing to be optimized and set constraint conditions. The process window, the photoetching imaging graph outline and the like in the photoetching process are improved by setting a plurality of target parameters comprising process variation bandwidth, so that the OPC final result is more reasonable and has higher accuracy.
In some embodiments, the target parameter is selected from the following parameters: critical Dimension (CD), normalized Image Log Slope (NILS), mask Error Enhancement Factor (MEEF), depth of Focus (DOF), aspect ratio (aspect _ ratio) of a square hole in a Mask, circularity (circularity) of a pattern after exposure of the square hole in the Mask, and the like. And further establishing an objective function to be optimized: for example, a process variation bandwidth objective function PVBAND (x) is established based on the process variation bandwidth i ) Establishing a CD (x) target function based on the CD i ) Establishing an image normalized logarithmic slope target function NILS (x) based on the image normalized logarithmic slope i ) Establishing a mask error enhancement factor objective function MEEF (x) based on the mask error enhancement factor i ) Establishing a depth of focus objective function DOF (x) based on depth of focus i ) Establishing an aspect ratio target function aspect _ ratio (x) of the square hole in the mask plate based on the aspect ratio of the square hole in the mask plate i ) Establishing a circularity target function circularity (x) of the exposed pattern of the square hole in the mask plate based on the circularity of the exposed pattern of the square hole in the mask plate i ). Single objectThe function may be built following the function building rules.
In some embodiments, the constraint condition may be that an absolute value of the edge placement error is less than or equal to a preset threshold. For example, an absolute value of edge placement error of less than or equal to 1, i.e., EPE (x), can be set according to the quality requirements of the lithographically imaged pattern i )| <=1; or setting the absolute value of the edge placement error to be less than or equal to 0.5, i.e. | EPE (x) i )| <=0.5; the preset threshold may also be set to a value between 0.5 and 1.
With respect to step S13, a composite objective function is established based on a plurality of said objective parameters. In particular, the composite objective function is a weighted combination of a plurality of objective functions; wherein the objective function is established based on the corresponding objective parameters. For example, for parameters such as normalized logarithmic slope of an image and depth of focus, based on the quality requirement of a lithographic imaging pattern, it is desirable that the smaller the function value, the better the function value, so that the corresponding objective function can be combined with other objective functions into a corresponding composite objective function after taking the reciprocal of the objective function and multiplying the reciprocal by a corresponding weight. The weight of each objective function can be manually set based on the quality requirement of the photoetching imaging pattern, or can be obtained by setting an initial value and carrying out iterative optimization. By establishing a composite objective function based on a plurality of target parameters, the optical proximity effect correction under an ideal condition on a two-dimensional plane is considered, and the optimization solution is also carried out on the improvement of a process window in the photoetching process; and after the mask graph is transferred in the manufacture of the high-end chip key graph, a solution is provided for the optimization of enhancement of a process window of a photoetching pattern formed on a wafer, the outline of a photoetching imaging graph, the photoetching imaging quality in a three-dimensional space and the like, so that the OPC final result is more reasonable and has higher accuracy.
And S14, carrying out optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and obtaining a target movement amount corresponding to the optimal solution meeting the constraint condition. Specifically, under the condition that constraint conditions are met, a composite objective function established by weighted combination of a plurality of objective functions is optimized, so that the OPC final result is more reasonable and has higher accuracy.
And the parameter adjusting boundary is a boundary value of the parameter adjusting variable. In some embodiments, the parameter adjustment boundary is greater than or equal to 0 and less than or equal to a preset maximum value of motion (e.g., the preset maximum value of motion is 20nm, the parameter adjustment boundary is [0 to 20nm ]). In some embodiments, the optimization condition may be that the optimization time is less than or equal to a preset time (for example, a time value between 3 and 10 minutes), or the optimization condition may also be that the maximum number of iterations is less than or equal to a preset number.
In some embodiments, the step of solving the composite objective function for optimization further comprises: calling a multi-parameter optimization algorithm to carry out optimization solution on the composite objective function; wherein the multi-parameter optimization algorithm is selected from a genetic algorithm or a Bayesian optimization algorithm. By invoking a multi-parameter optimization algorithm: for example, a genetic algorithm or a bayesian optimization algorithm is used for carrying out optimization solution to obtain a target movement amount corresponding to the optimal solution meeting the constraint condition. Specifically, the initial movement amount x set by each segmentation unit is obtained through optimization solution 1 ，x 2 ，…，x n Corresponding final target movement amount d 1 ，d 2 ，…，d n . Target movement amount d 1 ，d 2 ，…，d n The set of the segmentation units is the moved sample of the photoetching imaging graph, and the optimized photoetching imaging graph can be obtained by moving the segmentation units according to the target movement amount.
With respect to step S15, the cutting unit is moved in accordance with the target movement amount. Obtaining the final target movement amount d of each segmentation unit through optimization solution 1 ，d 2 ，…，d n Target amount of movement d 1 ，d 2 ，…，d n I.e., as the lithographic image pattern is moved. And moving the segmentation unit according to the target movement amount to obtain the optimized photoetching imaging graph so as to realize photomask optimization.
The above-described photomask optimization method is further explained below with reference to examples.
The first embodiment is as follows: for example, the three-dimensional shape of the metal layer is optimized, for example, the three-dimensional shape of the metal layer in the later stage in the advanced node of 14 nm or below is optimized. Obtaining an original layout of a metal layer needing to optimize the three-dimensional appearance of the metal layer, segmenting an edge to be optimized on the original layout, and setting an initial movement amount x of each segmentation unit 1 ，x 2 ，…，x n And n is the total number of the segmentation units. Setting a constraint condition to be | EPE (x) based on the original layout i )| <=1, wherein EPE (x) i ) Is an edge placement error; and setting the image normalization logarithmic slope, the mask error enhancement factor and the process variation bandwidth as target parameters. Establishing a composite objective function: c (x) = Σ w1/NILS (x) i )+w2*MEEF(x i )+w3*PVBAND(x i )，1<=i<= n; wherein, NILS (x) i ) For a first objective function, MEEF (x), corresponding to the normalized logarithmic slope of the image i ) PVBAND (x) as a second objective function corresponding to the mask error enhancement factor i ) And a third objective function corresponding to the process variation bandwidth, wherein w1 is the weight of the first objective function, w2 is the weight of the second objective function, and w3 is the weight of the third objective function. Setting parameter adjusting boundary to [ 0-20nm]Setting the optimization time to t<5 minutes; and calling genetic algorithm or Bayesian optimization algorithm to optimally solve the established composite objective function C (x), namely, in the situation of | EPE (x) i ) Optimizing 1/NILS (x) in case | is to satisfy less than 1 i )，MEEF(x i )，PVBAND(x i ) A weighted combination of (1); and (3) calculating a target movement amount corresponding to the optimal solution meeting the constraint condition: d 1 ，d 2 ，…，d n . According to the target movement amount d 1 ，d 2 ，…，d n And moving the corresponding segmentation unit to obtain the optimized photoetching imaging graph and realize the optimization of the three-dimensional shape of the metal layer.
Example two: take the example of optimizing via level vias. Obtaining a via layer original layout needing to optimize via layer through holes, and aligning on the original layoutThe edge to be optimized is cut, and the initial movement x of each cutting unit is set 1 ，x 2 ，…，x n And n is the total number of the segmentation units. Setting a constraint condition to be | EPE (x) based on the original layout i )| <=1, wherein EPE (x) i ) Is an edge placement error; and setting the image normalization logarithmic slope, the length-width ratio of a square hole in the mask and the process variation bandwidth as target parameters. Establishing a composite objective function: c (x) = Σ w1/NILS (x) i )+w2*aspect_ratio(x i )+ w3*PVBAND(x i )，1<=i<= n; wherein, NILS (x) i ) An aspect _ ratio (x) as a first objective function corresponding to the normalized logarithmic slope of the image i ) A second objective function, PVBAND (x), corresponding to the aspect ratio of the square hole in the reticle i ) And a third objective function corresponding to the process variation bandwidth, wherein w1 is the weight of the first objective function, w2 is the weight of the second objective function, and w3 is the weight of the third objective function. Setting parameter adjusting boundary to [ 0-20nm]Setting the optimum time to t<5 minutes; and calling a genetic algorithm or a Bayesian optimization algorithm to optimally solve the established composite target function C (x), namely, in the value of | EPE (x) i ) Optimizing 1/NILS (x) in case | is to satisfy less than 1 i )，aspect_ratio(x i )，PVBAND(x i ) A weighted combination of (1); and (3) calculating a target movement amount corresponding to the optimal solution meeting the constraint condition: d 1 ，d 2 ，…，d n . According to the target movement amount d 1 ，d 2 ，…，d n The optimized photoetching imaging graph can be obtained by moving the corresponding segmentation unit, and the aspect ratio of the corrected mask of the through hole is more reasonable and has higher accuracy.
Example three: the via level vias are still optimized for example. Acquiring a via layer original layout needing to optimize via layer vias, segmenting an edge to be optimized on the original layout, and setting an initial movement amount x of each segmentation unit 1 ，x 2 ，…，x n And n is the total number of the segmentation units. Setting a constraint condition to be | EPE (x) based on the original layout i )| <=0.5, wherein，EPE(x i ) Is an edge placement error; and setting the circularity of the exposed graph of the square hole in the mask plate and the process variation bandwidth as target parameters. Establishing a composite objective function: c (x) = ∑ w 1/circulation (x) i )+w2*PVBAND(x i )，1<=i<= n; wherein, circulation (x) i ) A first objective function corresponding to the circularity of the exposed pattern of a square hole in the mask, PVBAND (x) i ) And a second objective function corresponding to the process variation bandwidth, wherein w1 is the weight of the first objective function, and w2 is the weight of the second objective function. Setting parameter adjusting boundary to [ 0-20nm]Setting the optimum time to t<5 minutes; and calling genetic algorithm or Bayesian optimization algorithm to optimally solve the established composite objective function C (x), namely, in the situation of | EPE (x) i ) Optimizing circulation (x) under the condition that | is less than 0.5 i )，PVBAND(x i ) A weighted combination of (1); and (3) calculating a target movement amount corresponding to the optimal solution meeting the constraint condition: d 1 ，d 2 ，…，d n . According to the target movement amount d 1 ，d 2 ，…，d n And the optimized photoetching imaging graph can be obtained by moving the corresponding segmentation unit, and the circularity and the process window of the exposed through hole are more reasonable and have higher accuracy.
Based on the same inventive concept, the invention also provides a photomask optimizing device. The photomask optimizing device can adopt the photomask optimizing method shown in figure 1 to optimize the photomask of the photoetching imaging graph, so that the OPC final result is more reasonable and has higher accuracy.
Please refer to fig. 3, which is a block diagram illustrating a photomask optimizing apparatus according to an embodiment of the present invention. As shown in fig. 3, the photomask optimizing apparatus includes: a first acquisition module 31, a setting module 32, a building module 33, a second acquisition module 34, and a moving module 35.
Specifically, the first obtaining module 31 is configured to obtain an original layout to be optimized, segment an edge to be optimized on the original layout, and set an initial movement amount of each segment unit. The setting module 32 is configured to set a constraint condition and a plurality of target parameters based on the original layout, where the target parameters at least include a process variation bandwidth. The establishing module 33 is configured to establish a composite objective function based on a plurality of the objective parameters. The second obtaining module 34 is configured to perform an optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and obtain a target movement amount corresponding to an optimal solution that meets the constraint condition. The moving module 35 is configured to move the corresponding segmentation unit according to the target movement amount. The working modes of the modules can refer to the descriptions of the corresponding steps in the photomask optimization method shown in fig. 1, and are not described herein again.
According to the photomask optimization method and device, the composite objective function is formed by weighted combination of a plurality of objective functions corresponding to a plurality of objective parameters comprising process variation bandwidth, the composite objective function is optimally solved by combining constraint conditions, the objective movement amount corresponding to the optimal solution meeting the constraint conditions is obtained, and the corresponding segmentation unit is moved according to the objective movement amount, so that the optimized photoetching imaging graph optimizes the process window and the imaging quality to the maximum extent, the OPC final result of the high-end chip photoetching process is more reasonable, and the accuracy is higher.
Based on the same inventive concept, the invention also provides an electronic device, which comprises a memory, a processor and a computer executable program, wherein the computer executable program is stored on the memory and can run on the processor; the processor, when executing the computer executable program, implements the steps of the method for optimizing a photomask as shown in FIG. 1.
It is within the scope of the inventive concept that embodiments may be described and illustrated in terms of modules that perform one or more of the described functions. These modules (which may also be referred to herein as cells, etc.) may be physically implemented by analog and/or digital circuitry, such as logic gates, integrated circuits, microprocessors, microcontrollers, memory circuits, passive electronic components, active electronic components, optical components, hardwired circuitry, etc., and may optionally be driven by firmware and/or software. The circuitry may be implemented in one or more semiconductor chips, for example. The circuitry making up the modules may be implemented by dedicated hardware, or by a processor (e.g., one or more programmed microprocessors and associated circuitry), or by a combination of dedicated hardware to perform some of the functions of the module and a processor to perform other functions of the module. Each module of an embodiment may be physically separated into two or more interacting and discrete modules without departing from the scope of the inventive concept. Likewise, the modules of the embodiments may be physically combined into more complex modules without departing from the scope of the inventive concept.
Generally, terms may be understood at least in part from their usage in context. For example, the term "one or more" as used herein may be used in a singular sense to describe a feature, structure, or characteristic, or may be used in a plural sense to describe a feature, structure, or combination of features, at least in part, depending on the context. Additionally, the term "based on" may be understood as not necessarily intended to convey an exclusive set of factors, but may instead allow for the presence of other factors not necessarily explicitly described, again depending at least in part on the context.
It is noted that the terms "comprises" and "comprising," and variations thereof, as used herein, are intended to cover a non-exclusive inclusion. The terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order, unless otherwise clearly indicated by the context, and it is to be understood that the data so used is interchangeable under appropriate circumstances. In addition, the embodiments and features of the embodiments in the present invention may be combined with each other without conflict. Moreover, in the foregoing description, descriptions of well-known components and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention. In the above embodiments, each embodiment is described with emphasis on differences from other embodiments, and the same/similar parts among the embodiments may be referred to each other.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (7)

1. A photomask optimization method is characterized by comprising the following steps: acquiring a via layer original layout needing to be optimized for via layer through holes, segmenting an edge to be optimized on the via layer original layout, and setting an initial movement amount of each segmentation unit; setting constraint conditions and a plurality of target parameters based on the original layout of the through hole layer, wherein the target parameters comprise process variation bandwidth and one of the following parameters: the length-width ratio of the square hole in the mask plate and the circularity of the exposed graph of the square hole in the mask plate; establishing a composite objective function based on the plurality of objective parameters, the composite objective function being a weighted combination of the plurality of objective functions, the objective function being established based on the corresponding objective parameters; performing optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and acquiring a target movement amount corresponding to an optimal solution meeting the constraint condition; and moving the corresponding segmentation unit according to the target movement amount.
2. The method according to claim 1, wherein the constraint is that an absolute value of the edge placement error is less than or equal to a preset threshold; the parameter adjusting boundary is greater than or equal to 0 and less than or equal to a preset moving maximum value; the optimization condition is that the optimization time is less than or equal to the preset time.
3. The method of claim 1, wherein said step of optimally solving said composite objective function further comprises: and calling a multi-parameter optimization algorithm to carry out optimization solution on the composite objective function, wherein the multi-parameter optimization algorithm is selected from a genetic algorithm or a Bayesian optimization algorithm.
4. The method of claim 1, wherein the target parameters are image normalized logarithmic slope, aspect ratio of square hole in mask plate, and process variation bandwidth, and the constraints are: i EPE (x) i )| <=1, wherein EPE (x) i ) Is an edge placement error; accordingly, the composite objective function established is: c (x) = Σ w1/NILS (x) i )+w2*aspect_ratio(x i )+w3*PVBAND(x i )，1<=i<= n; wherein n is the total number of the segmentation units, NILS (x) i ) An aspect _ ratio (x) as a first objective function corresponding to the normalized logarithmic slope of the image i ) A second objective function, PVBAND (x), corresponding to the aspect ratio of the square hole in the reticle i ) And a third objective function corresponding to the process variation bandwidth, wherein w1 is the weight of the first objective function, w2 is the weight of the second objective function, and w3 is the weight of the third objective function.
5. The method according to claim 1, wherein the set target parameters are the circularity of the pattern after exposure of the square hole in the mask and the process variation bandwidth, and the set constraint conditions are as follows: i EPE (x) i )| <=0.5, wherein EPE (x) i ) Is an edge placement error; accordingly, the composite objective function established is: c (x) = ∑ w 1/circulation (x) i )+w2*PVBAND(x i )，1<=i<= n; wherein n is the total number of the cutting units, circulation (x) i ) A first objective function corresponding to the circularity of the exposed pattern of a square hole in the mask, PVBAND (x) i ) And a second objective function corresponding to the process variation bandwidth, wherein w1 is the weight of the first objective function, and w2 is the weight of the second objective function.
6. A photomask optimizing apparatus, comprising: the first acquisition module is used for acquiring a via layer original layout needing to be optimized for via layer through holes, segmenting an edge to be optimized on the via layer original layout, and setting an initial movement amount of each segmentation unit; the setting module is used for setting constraint conditions and a plurality of target parameters based on the original layout of the through hole layer, wherein the target parameters comprise process variation bandwidth and one of the following parameters: the length-width ratio of the square hole in the mask plate and the circularity of the exposed graph of the square hole in the mask plate; the establishing module is used for establishing a composite objective function based on the target parameters, the composite objective function is a weighted combination of the target functions, and the objective function is established based on the corresponding target parameters; a second obtaining module, configured to perform an optimization solution on the composite objective function according to the initial movement amount and the constraint condition based on a preset parameter adjusting boundary and an optimization condition, and obtain a target movement amount corresponding to an optimal solution that meets the constraint condition; and the moving module is used for moving the corresponding segmentation unit according to the target movement amount.
7. An electronic device comprising a memory, a processor and a computer-executable program stored on the memory and executable on the processor, wherein the steps of the photomask optimization method according to any one of claims 1 to 5 are implemented when the processor executes the computer-executable program.
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