CN115597764A

CN115597764A - Pressure detection device and pressure detection method

Info

Publication number: CN115597764A
Application number: CN202110780077.5A
Authority: CN
Inventors: 龚新; 储鑫
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2021-07-09
Filing date: 2021-07-09
Publication date: 2023-01-13

Abstract

The present disclosure relates to a pressure detecting device and a pressure detecting method. The pressure detection device comprises: the vacuum chamber comprises a light emitter, a light receiver and a processor, wherein the light emitter is arranged on the wall of the vacuum chamber and is configured to emit a detection light signal into the cavity of the vacuum chamber, the light receiver is arranged on the wall of the vacuum chamber, is opposite to the light emitter and is configured to receive the detection light signal, and the processor is connected with the light receiver and is configured to analyze the spectrum of the detection light signal received by the light receiver and determine the pressure in the vacuum chamber according to the spectrum. The pressure detection device and the pressure detection method provided by the disclosure can improve the response speed and detection accuracy of pressure detection in the vacuum chamber, thereby improving the yield of products prepared in the vacuum chamber and reducing the production cost of semiconductor products in batch production.

Description

Pressure detection device and pressure detection method

Technical Field

The present disclosure relates to semiconductor integrated circuit manufacturing technologies, and in particular, to a pressure detection apparatus and a pressure detection method.

Background

In the manufacturing process of semiconductor integrated circuits, such as Chemical Vapor Deposition (CVD) process, physical Vapor Deposition (PVD) process, etc., is often performed in a vacuum environment. Therefore, it is necessary to install a pressure detection device on a vacuum chamber required for manufacturing a semiconductor integrated circuit so as to detect a pressure change in the vacuum chamber in real time by using the pressure detection device.

At present, the working principle of the pressure detecting device is as follows: the pressure measuring diaphragm is used as a movable pole plate of the capacitor, and the pressure measuring diaphragm and a fixed pole plate form the capacitor with variable capacitance, so that the capacitance change of the capacitor can be obtained by utilizing the displacement change of the pressure measuring diaphragm under the pressure change, and the pressure change to be measured can be determined.

However, the pressure measuring diaphragm is usually made of an elastic element, such as a metal sheet, which is easily deformed for many times and is difficult to recover, so that the measured pressure is inaccurate, and further, the semiconductor manufacturing process in the vacuum chamber has a problem of large deviation of Critical Dimension (CD).

Disclosure of Invention

Accordingly, the present disclosure provides a pressure detection apparatus and a pressure detection method, which can improve the response speed and detection accuracy of pressure detection in a vacuum chamber, thereby improving the yield of products prepared in the vacuum chamber and reducing the production cost of semiconductor products in batch production.

In order to achieve the above objects, in one aspect, some embodiments of the present disclosure provide a pressure detection device. The pressure detection device includes: an optical transmitter, an optical receiver, and a processor. The optical transmitter is arranged on the cavity wall of the vacuum cavity and is configured to emit the detection optical signal into the cavity of the vacuum cavity. The optical receiver is disposed on a wall of the vacuum chamber and opposite to the optical transmitter, and is configured to receive the detection optical signal. The processor is coupled to the optical receiver and configured to interpret a spectrum of the detection light signal received by the optical receiver and determine a pressure within the vacuum chamber based on the spectrum.

In some examples, the detection light signal is transmitted to the optical receiver through a working area within the vacuum chamber cavity, wherein the working area is used to sputter and/or deposit particles. The processor is further configured to: the particle composition and/or particle defects in the working area are determined from the aforementioned spectra.

In some examples, a stage is disposed within the vacuum chamber. The optical transmitter and the optical receiver are located on the working side of the carrier. The vertical distance from the light emitter to the carrying platform is equal to the vertical distance from the light receiver to the carrying platform, and the vertical distance is larger than a first threshold value.

In some examples, the optical transmitter and the optical receiver are symmetrically arranged with respect to a reference plane, which is a vertical plane in which the geometric center of the stage is located.

In some examples, the pressure detection device further comprises: a focusing lens. The focusing lens is arranged on the light emitting side of the light emitter and is configured to: the detection light signal emitted by the light emitter is focused into the cavity of the vacuum chamber.

Optionally, the focusing lens is hermetically connected to the wall of the vacuum chamber.

Optionally, the light emitter comprises a housing, and a light source disposed within the housing. The focusing lens is arranged in the shell and is detachably connected with the shell.

Illustratively, the housing is sealingly connected to the wall of the vacuum chamber.

Illustratively, the housing is a metal housing.

Illustratively, the light source is a laser light source.

In some examples, the pressure detection device further comprises: a first heating section. The first heating unit is provided on a surface or a peripheral side of the focus lens and configured to heat the focus lens.

Optionally, the first heating part includes: a silicon heating layer or a metal heating layer.

In some examples, the pressure detection device further comprises: isolating the lens. The isolation lens is arranged on the light incidence side of the light receiver and is configured to prevent particles in the vacuum chamber from being gathered to the light receiver.

In some examples, the pressure detection device further comprises: a second heating section. The second heating part is arranged on the surface or the peripheral side of the isolation lens and is configured to heat the isolation lens.

Optionally, the second heating part includes: a silicon heating layer or a metal heating layer.

In another aspect, some embodiments of the present disclosure provide a pressure detection method of a pressure detection device, which includes the following steps.

The light emitter emits a detection light signal into the vacuum chamber, so that the detection light signal passes through the working area in the vacuum chamber and is transmitted to the light receiver.

The optical receiver receives the detection optical signal, converts the detection optical signal into an electrical signal, and transmits the electrical signal to the processor.

The processor analyzes the spectrum of the detected optical signal according to the electric signal, and determines the pressure in the vacuum chamber according to the spectrum.

In some examples, the work area is used for sputtering and/or depositing particles. The processor also determines a particulate composition and/or particulate defects within the working area based on the spectrum.

In some examples, the pressure detection device further includes a focusing lens disposed on a light exit side of the light emitter. The pressure detection method of the pressure detection device further comprises the following steps: the focusing lens is heated during or before the light emitter emits the detection light signal.

In the embodiment of the present disclosure, the pressure detecting device and the pressure detecting method thereof are as described above. The pressure detection device determines the pressure in the vacuum chamber according to the spectrum change of the detection optical signal, namely, the pressure detection is carried out in a photoelectric signal conversion mode, the pressure detection device can have stable, sensitive and accurate conversion precision, so that the pressure detection precision and the response speed after the pressure detection are improved, and the pressure in the vacuum chamber can be kept or timely adjusted to be within a required accurate pressure range. Moreover, the pressure zero point detected by the pressure detection device cannot be shifted or changed due to long-time use, and the use reliability and the data consistency of the pressure detection device can be ensured. On the basis, along with the improvement of the precision of the semiconductor preparation process, the pressure detection device can assist the semiconductor manufacturing equipment to realize extremely low pressure control.

In addition, the pressure detection device can also determine the particle composition and/or the defect in the vacuum chamber according to the spectrum change of the detection optical signal so as to judge the content of various products in different processing stages, and judge the etching condition in the vacuum chamber according to the difference of the products, thereby assisting in analyzing the particle defect and the cause of the critical dimension deviation. Therefore, the yield of the semiconductor products prepared in the vacuum chamber is improved, and the production cost (such as cost reduction caused by manpower reduction and wafer scrap risk prevention and control) during batch production of the semiconductor products is reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic view of a vacuum chamber in a semiconductor manufacturing apparatus according to an exemplary embodiment;

fig. 2 is a schematic structural diagram of a pressure detection device according to an embodiment;

FIG. 3 is a schematic diagram of the pressure detecting device shown in FIG. 2;

fig. 4 is a schematic structural diagram of another pressure detection device provided in an embodiment;

FIG. 5 is a cross-sectional view of a light emitter component according to an embodiment;

FIG. 6 is a cross-sectional schematic view of another light emitter component provided in an embodiment;

FIG. 7 is a cross-sectional schematic view of yet another light emitter component provided in an embodiment;

FIG. 8 is a view of the first heating portion of the light emitter component of FIG. 7 in the direction A;

FIG. 9 is a cross-sectional schematic view of yet another light emitter component provided in an embodiment;

fig. 10 is a schematic structural diagram of another pressure detecting device provided in an embodiment;

FIG. 11 is a cross-sectional view of an optical receiver assembly in accordance with an embodiment;

FIG. 12 is a cross-sectional schematic view of another optical receiver assembly provided in an embodiment;

FIG. 13 is a cross-sectional view of yet another optical receiver assembly provided in an embodiment;

fig. 14 is a flowchart of a pressure detection method according to an embodiment.

Description of the reference numerals:

1000-semiconductor manufacturing equipment, 1-vacuum chamber, 10-stage, 2-robot, 3-airlock, 100-pressure detection device, 11-light emitter, 110-housing of light emitter, 111-light source, 12-light receiver, 120-housing of light receiver, 121-photosensor, 13-processor, 14-focusing lens, 141-first heating part, 15-isolation lens, 151-second heating part.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present.

It will be understood that, although the terms first, second, etc. may be used to describe various elements, components, regions, layers, doping types and/or sections, these elements, components, regions, layers, doping types and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type or section from another element, component, region, layer, doping type or section. Thus, a first element, component, region, layer, doping type or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.

As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Also, in this specification, the term "and/or" includes any and all combinations of the associated listed items.

With the development of technology, the fabrication of semiconductor devices, such as semiconductor integrated circuits, can be highly automated by semiconductor manufacturing equipment.

Referring to fig. 1, a semiconductor manufacturing apparatus 1000 generally comprises: a plurality of vacuum chambers (chambers) 1, a robot arm 2, and a machine base 3. A vacuum Chamber (Chamber) 1 and a robot arm 2 are provided on the machine base 3. The robot arm 2 can perform operations such as substrate transfer between the plurality of vacuum chambers 1 in accordance with the control instructions. The semiconductor manufacturing apparatus 1000 further includes an Airlock (Airlock, also called a vacuum atmosphere transfer chamber) 4. The machine table 3 is also in communication with the airlock 4 for exchanging gas between the vacuum chamber 1 and the external environment through the airlock 4, thereby controlling the pressure inside the vacuum chamber 1.

Referring to fig. 2, some embodiments of the present disclosure provide a pressure detection apparatus 100 for detecting the pressure within the chamber of the vacuum chamber 1. The pressure detecting device 100 includes: an optical transmitter 11, an optical receiver 12 and a processor 13. The optical transmitter 11 and the optical receiver 12 are both disposed on the wall of the vacuum chamber 1, and the optical transmitter 11 and the optical receiver 12 are disposed opposite to each other.

As will be understood by referring to fig. 2 and 3, the optical transmitter 11 can emit a detection optical signal into the cavity of the vacuum chamber 1 and transmit the detection optical signal to the optical receiver 12. The optical receiver 12 receives the detection optical signal, can convert the detection optical signal into an electrical signal, and transmits the electrical signal to the processor 13. The processor 13 is connected to the optical receiver 12, and is capable of analyzing the spectrum of the detection light signal received by the optical receiver 12 according to the electrical signal, and determining the pressure in the vacuum chamber 1 according to the spectrum.

It will be appreciated that during the fabrication of semiconductor integrated circuits or semiconductor related devices using vacuum chamber 1, neither the formation nor etching of the semiconductor thin film nor the sputtering and/or deposition of particles occurs. The working area within the vacuum chamber 1 is the area where particles are sputtered and/or deposited. The detection light signal emitted from the optical transmitter 11 into the vacuum chamber 1 passes through the working area and is transmitted to the optical receiver 12. Therefore, if the pressure in the vacuum chamber 1 is different, the distribution density of the particles, that is, the pitch between the particles is different. Here, the fine particles refer to various kinds of particles of substances such as molecules and ions existing in the cavity of the vacuum chamber 1.

Accordingly, the refractive changes of the detection light signal emitted from the light emitter 11 into the vacuum chamber 1 when passing through each particle are different due to the different distances between the particles, so that the wavelength of the detection light signal is different from the initial value. Therefore, the wavelength of the detection light signal received by the optical receiver 12 is changed relative to the wavelength of the detection light signal emitted by the optical transmitter 11 due to the pressure in the vacuum chamber 1. Thus, after the optical receiver 12 converts the detection optical signal into an electrical signal and transmits the electrical signal to the processor 13, the processor 13 can analyze the spectrum of the detection optical signal according to the electrical signal and determine the pressure in the vacuum chamber 1 according to the spectrum.

One kind or more kinds of particles may be used depending on the kind of the particles in the vacuum chamber 1. In the case where the types of particles are different and the pressure is the same, the wavelength of the detected optical signal irradiated onto different types of particles may vary. Accordingly, the spectrum analyzed by the processor 13 according to the electrical signals includes spectral information corresponding to each particle independently. Wherein the spectral information of different types of particles is different. As such, the processor 13 may also determine the particle composition and/or particle defects from the aforementioned spectra.

In summary, in the embodiment of the present disclosure, the pressure detecting device 100 adopts the above structure, and determines the pressure in the vacuum chamber 1 according to the spectrum change of the detecting optical signal, that is, the pressure detection is performed by the photoelectric signal conversion method, so that the pressure detecting device has stable, sensitive and accurate conversion precision, so as to improve the pressure detecting precision and the response speed after the pressure detection, and ensure that the pressure in the vacuum chamber 1 can be maintained or timely adjusted to the required accurate pressure range. Moreover, the pressure zero point detected by the pressure detection device 100 will not shift or change due to long-term use, so as to ensure the use reliability and data consistency of the pressure detection device 100. On the basis, as the precision of the semiconductor manufacturing process is improved, the pressure detection device 100 can also assist the semiconductor manufacturing equipment 1000 to realize extremely low pressure control.

In addition, the pressure detection apparatus 100 can determine the particle composition and/or defects in the vacuum chamber 1 according to the spectrum variation of the detection optical signal, so as to determine the content of various products in different process stages, and determine the etching condition in the vacuum chamber 1 according to the difference of the products, thereby assisting in analyzing the particle defects and the cause of the critical dimension deviation. Therefore, the yield of the semiconductor products prepared in the vacuum chamber is improved, and the production cost (such as cost reduction caused by manpower reduction and wafer scrap risk prevention and control) during batch production of the semiconductor products is reduced.

In some embodiments, with continued reference to fig. 2, a stage 10 is typically disposed within the vacuum chamber 1. The carrier 10 is capable of carrying a substrate such as a wafer to fabricate semiconductor devices thereon by an epitaxial process, a deposition process, or the like. The side of the carrier 10 that is used for carrying the substrate is its working side, i.e. the space above the carrier 10 in fig. 2, which is also the working area of the vacuum chamber 1. The optical transmitter 11 and the optical receiver 12 are disposed on the working side of the stage 10.

Optionally, the vertical distance D of the light emitter 11 to the carrier 10 ₁ And a vertical distance D from the light receiver 12 to the carrier 10 ₂ Are equal to, and D ₁ ＝D ₂ T is a first threshold. T may be set according to actual requirements, for example, T =4cm ± 1cm. The disclosure is not limited thereto, and the detection light signal emitted from the light emitter 11 can traverse through the working area above the stage 10 and can sufficiently irradiate each particle.

Optionally, the optical transmitter 11 and the optical receiver 12 are arranged with a reference plane S ₀ Is arranged in central symmetry, and has a reference surface S ₀ Which is a vertical plane in which the geometric center of the carrier 10 is located. Thus, the detection light signal emitted from the light emitter 11 can be ensured to be directly incident on the light receiver 12, so that the refraction change of the detection light signal can be conveniently collected.

In some embodiments, referring to fig. 4, the pressure detecting device 100 further includes: a focusing lens 14. The focusing lens 14 is disposed on the light emitting side of the light emitter 11, and can focus the detection light signal emitted from the light emitter 11 into the cavity of the vacuum chamber 1, so that the detection light signal has a stronger penetrating power. The focusing lens 14 and the light emitter 11 may be separately installed or may be integrally installed.

For example, with continued reference to fig. 4, the focusing lens 14 is independently mounted on the wall of the vacuum chamber 1. On the basis of this, the focusing lens 14 is sealingly connected to the wall of the vacuum chamber 1, for example by means of an O-ring seal (not shown). Based on this, the size of the O-ring is matched with the size of the focusing lens 14, and the O-ring is slightly larger in size, so that the O-ring has stronger pressure resistance, is not easily damaged by the pressure in the cavity of the vacuum chamber 1, and can have longer service life.

For example, referring to fig. 5, the light emitter 11 includes a housing 110 and a light source 111 disposed in the housing 110. The focusing lens 14 is disposed within the housing 110 of the light emitter 11.

Optionally, the housing 110 of the light emitter 11 is a metal housing, for example, an aluminum alloy housing. In this way, the housing 110 can isolate the light source 111 from the wall of the vacuum chamber 1 to protect the light source 111.

Optionally, the light source 111 is a laser light source, such as any one of a gas laser light source, a solid fuel laser light source, a semiconductor laser light source, or a free electron laser light source. The light beam emitted by the laser light source has directivity, the diffusion angle of the light beam is extremely small, and high energy concentration can be realized, so that remote detection is carried out.

In addition, the types of laser light sources are different, and the types and corresponding energy level values of the energy level transitions are different, so that the wavelengths of output light are also different. The embodiment of the present disclosure does not limit this, and the setting may be specifically selected according to actual requirements.

In some embodiments, the focusing lens 14 is removably coupled to the housing 110 of the light emitter 11. On this basis, the housing 110 of the light emitter 11 is hermetically connected with the cavity wall of the vacuum chamber 1. Thus, the focusing lens 14 is integrated in the housing 110 of the light emitter 11 and is detachably connected to the housing 110, which facilitates periodic replacement to ensure the penetrating power for detecting the light signal.

In some embodiments, referring to fig. 6, 7, 8 and 9, the pressure detecting device 100 further includes: the first heating part 141. The first heating part 141 may be disposed on a surface or a circumferential side of the focus lens 14, and configured to heat the focus lens 14. The heating temperature of the first heating unit 141 may be determined according to the process temperature in the vacuum chamber 1, and for example, the heating temperature of the first heating unit 141 may be controlled to 60 to 80 ℃.

Illustratively, the first heating part 141 is disposed on the surface of the focusing lens 14, and the first heating part 141 is a silicon heating layer or a metal heating layer. For example, as shown in fig. 6, the first heating part 141 is a silicon heating layer, and the first heating part 141 covers the surface of the focusing lens 14, so that the focusing lens 14 can be uniformly heated. For example, as shown in fig. 7 and 8, the first heating part 141 is a metal heating layer, and the first heating part 141 has a ring-shaped structure and is disposed on the surface of the focusing lens 14 near the edge. Thus, the first heating part 141 can be prevented from blocking the emission of the detection optical signal while the focusing lens 14 is heated by the metal heating layer.

As shown in fig. 9, the first heating unit 141 is provided on the periphery of the focus lens 14, and the first heating unit 141 is, for example, a metal bezel. The focusing lens 14 is detachably connected to the housing 110 of the light emitter 11 through the first heating part 141.

In the embodiment of the present disclosure, the first heating unit 141 heats the focusing lens 14, so that particles are not easily attached to the surface of the focusing lens 14, and reaction products generated in each process step in the cavity of the vacuum chamber 1 are prevented from being concentrated on the focusing lens 14. Therefore, the reaction product collected on the focusing lens 14 can be prevented from forming a particle source, causing contamination to the wafer or forming particle defects.

In addition, the first heating part 141 is used to heat the focusing lens 14, so as to prevent the focusing lens 14 from reducing its definition due to the aggregation of the reaction product, thereby avoiding the influence on the penetrating power of the detection light signal and the adverse fluctuation of the pressure detection result.

Similarly, in some embodiments, referring to fig. 10, the pressure detecting device 100 further includes: the lens 15 is isolated. The isolation lens 15 is disposed on the light incident side of the light receiver 12, and can block the particles in the vacuum chamber 1 from being collected on the light receiver 12. The isolation lens 15 and the optical receiver 12 may be mounted separately or may be provided integrally.

For example, with continued reference to fig. 10, the isolation lens 15 is independently mounted on the wall of the vacuum chamber 1. On this basis, the isolation lens 15 is sealingly connected to the wall of the vacuum chamber 1, for example by means of an O-ring seal (not shown). Based on this, the size of O type sealing washer matches the size of isolation lens 15, and its size is slightly bigger, can have stronger compressive capacity to be difficult for because of the pressure damage in vacuum chamber 1 intracavity, can have longer life.

For example, referring to fig. 11, the light receiver 12 includes a housing 120 and a photosensitive sensor 121 disposed in the housing 120. The isolation lens 15 is disposed within the housing 120 of the optical receiver 12.

Optionally, the housing 120 of the light receiver 12 is a metal housing, such as an aluminum alloy housing. In this way, the housing 120 can be used to isolate the photosensitive sensor 121 from the wall of the vacuum chamber 1 to protect the photosensitive sensor 121. In addition, the photosensor 121 is associated with the light source 111 in the light emitter 11, and the setting can be selected according to the type of the light source 111, so as to collect and receive the detection light signal emitted by the light source 111.

In some embodiments, the isolation lens 15 is removably coupled to the housing 120 of the optical receiver 12. On this basis, the housing 120 of the light receiver 12 is hermetically connected with the cavity wall of the vacuum chamber 1. Thus, the isolation lens 15 is integrated in the housing 120 of the optical receiver 12 and detachably connected to the housing 120, so as to facilitate periodic replacement to ensure the penetrating power for detecting the optical signal.

In some embodiments, referring to fig. 12 and 13, the pressure detecting device 100 further includes: and a second heating part 151. The second heating part 151 may be disposed on a surface or a peripheral side of the isolation lens 15 and configured to heat the isolation lens 15. The heating temperature of the second heating unit 151 may be determined according to the process temperature in the vacuum chamber 1, and for example, the heating temperature of the second heating unit 151 may be controlled to 60 to 80 ℃.

Optionally, the second heating part 151 is disposed on the surface of the isolation mirror 15, and the second heating part 151 is a silicon heating layer or a metal heating layer. For example, as shown in fig. 12, the second heating part 151 is a silicon heating layer, and the second heating part 151 covers the surface of the isolation glass 15, so that the isolation glass 15 can be uniformly heated. For example, the second heating part 151 is a metal heating layer, and the second heating part 151 takes a ring-shaped structure and is disposed on a surface of the isolation lens 15 near the edge. Thus, while the isolation lens 15 is heated by the metal heating layer, the second heating portion 151 is prevented from blocking the detection light signal.

Alternatively, as shown in fig. 13, the second heating part 151 is disposed on the peripheral side of the isolation lens 15, and the second heating part 151 is, for example, a metal race. The isolation lens 15 is detachably connected to the housing 120 of the optical receiver 12 through the second heating portion 151.

In the embodiment of the present disclosure, the second heating unit 151 is used to heat the isolation lens 15, so that particles are not easily attached to the surface of the isolation lens 15, and the reaction products in each process stage in the vacuum chamber 1 are prevented from gathering on the isolation lens 15. Therefore, the reaction product accumulated on the isolation lens 15 can be prevented from forming a particle source, and the wafer can be prevented from being polluted or having particle defects.

In addition, the second heating portion 151 is used to heat the isolation lens 15, so as to prevent the resolution of the isolation lens 15 from being reduced due to the accumulation of the reaction product, thereby preventing the penetration of the detection optical signal from being affected and preventing the adverse fluctuation of the pressure detection result from being caused.

The structure of the pressure detecting device 100 is as described in the previous embodiments. On this basis, the embodiment of the present disclosure further provides a pressure detection method, which is applied to the pressure detection apparatus 100.

Referring to fig. 14, the pressure detecting method of the pressure detecting device 100 includes the following steps:

s100, the light emitter emits a detection light signal into the vacuum chamber, so that the detection light signal penetrates through the working area in the vacuum chamber and is transmitted to the light receiver.

During the process of manufacturing a semiconductor integrated circuit or a semiconductor-related device using the vacuum chamber 1, the semiconductor thin film is formed or etched without sputtering and/or deposition of particles. The working area within the vacuum chamber 1 is the area where particles are sputtered and/or deposited. Here, the fine particles refer to various kinds of particles of substances such as molecules and ions existing in the cavity of the vacuum chamber 1.

S200, the optical receiver receives the detection optical signal, converts the detection optical signal into an electrical signal, and transmits the electrical signal to the processor.

Based on the detection light signal emitted from the light emitter 11 into the cavity of the vacuum chamber 1, the refractive changes occurring when the detection light signal passes through each particle are different due to the different distances between the particles, so that the wavelength of the detection light signal is different from the initial value. Therefore, the wavelength of the detection light signal received by the light receiver 12 is changed from the wavelength of the detection light signal emitted by the light emitter 11.

S300, the processor analyzes and detects the spectrum of the optical signal according to the electric signal, and determines the pressure in the vacuum chamber according to the spectrum.

In the embodiment of the present disclosure, the pressure detection method determines the pressure in the vacuum chamber 1 according to the spectral change of the detection optical signal, that is, the pressure detection is performed by the photoelectric signal conversion method, so that the pressure detection method has stable, sensitive and accurate conversion precision, so as to improve the pressure detection precision and the response speed after the pressure detection, and ensure that the pressure in the vacuum chamber 1 can be maintained or timely adjusted to the required accurate pressure range.

In addition, the types of particles in the chamber 1 may be one or more. In the case where the types of particles are plural and the pressure is the same, the wavelength of the detection light signal irradiated to the different types of particles may vary. Accordingly, the spectrum analyzed by the processor 13 according to the electrical signals includes spectral information corresponding to each particle independently. Wherein the spectral information of different types of particles is different. Thus, the pressure detection method of the pressure detection device further comprises: the processor determines the particle composition and/or particle defects from the spectra.

The pressure detection method can also determine the particle composition and/or defects in the vacuum chamber 1 according to the spectral change of the detection optical signal to judge the content of various products in different process stages, and judge the etching condition in the vacuum chamber 1 according to the difference of the products, thereby assisting in analyzing the causes of particle defects and critical dimension deviation. Therefore, the yield of the semiconductor products prepared in the vacuum chamber is improved, and the production cost (such as cost reduction caused by manpower reduction and wafer scrap risk prevention and control) during batch production of the semiconductor products is reduced.

In some examples, the pressure detection method of the pressure detection apparatus further includes: the focusing lens is heated during or before the light emitter emits the detection light signal.

In the embodiment of the present disclosure, please refer to fig. 4, it can be understood that by heating the focusing lens 14, particles are not easily attached to the surface of the focusing lens 14, and reaction products in each process stage in the vacuum chamber 1 are prevented from being concentrated on the focusing lens 14. Therefore, the reaction product collected on the focusing lens 14 can be prevented from forming a particle source, causing contamination to the wafer or forming particle defects.

In addition, by heating the focusing lens 14, the focusing lens 14 can be prevented from reducing its definition due to the accumulation of the reaction product, thereby preventing the influence on the penetration of the detection optical signal and the adverse fluctuation of the pressure detection result.

In some examples, the pressure detection method of the pressure detection apparatus further includes: the isolation lens is heated during or before the light emitter emits the detection light signal.

In the embodiment of the present disclosure, please refer to fig. 10, it can be understood that by heating the isolation lens 15, particles are not easily attached to the surface of the isolation lens 15, and the reaction products of each process stage in the vacuum chamber 1 are prevented from being accumulated on the isolation lens 15. Therefore, the reaction product accumulated on the isolation lens 15 can be prevented from forming a particle source, and the wafer can be prevented from being polluted or having particle defects.

In addition, by heating the isolation lens 15, the isolation lens 15 can be prevented from reducing its definition due to the accumulation of the reaction product, thereby preventing the penetration of the detection light signal from being affected and preventing the adverse fluctuation of the pressure detection result from being caused.

All the possible combinations of the technical features of the embodiments described above may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several implementation modes of the present application, and the description thereof is specific and detailed, but not construed as limiting the scope of the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, and these are all within the scope of protection of the present application. Therefore, the protection scope of the present patent application shall be subject to the appended claims.

Claims

1. A pressure detecting device, comprising:

the optical transmitter is arranged on the cavity wall of the vacuum cavity and is configured to emit a detection optical signal into the cavity of the vacuum cavity;

the optical receiver is arranged on the wall of the vacuum chamber and is opposite to the optical transmitter and is configured to receive the detection optical signal;

and a processor, coupled to the optical receiver, configured to resolve a spectrum of the detection light signal received by the optical receiver and determine a pressure within the vacuum chamber from the spectrum.

2. The pressure detection device of claim 1, wherein the detection light signal is transmitted to the light receiver through a working area in the vacuum chamber; the working area is used for sputtering and/or depositing particles;

the processor is further configured to: from the spectrum, the particle composition and/or particle defects within the working area are determined.

3. The pressure detection device as claimed in claim 1, wherein a stage is disposed in the vacuum chamber, and the optical transmitter and the optical receiver are located at a working side of the stage;

the vertical distance from the light emitter to the carrying platform is equal to the vertical distance from the light receiver to the carrying platform, and the vertical distance is larger than a first threshold value.

4. The pressure detecting device as claimed in claim 3,

the light emitter and the light receiver are symmetrically arranged by taking a reference surface as a center, and the reference surface is a vertical plane where the geometric center of the carrying platform is located.

5. The pressure detection device according to any one of claims 1 to 4, further comprising: a focusing lens;

the focusing lens is arranged on the light emitting side of the light emitter and is configured to: and focusing the detection light signal emitted by the light emitter into the cavity of the vacuum chamber.

6. The pressure detecting device of claim 5, wherein the focusing lens is hermetically connected to a wall of the vacuum chamber.

7. The pressure detection device as claimed in claim 5, wherein the light emitter comprises a housing, and a light source disposed in the housing;

the focusing lens is arranged in the shell and is detachably connected with the shell.

8. The pressure detection device of claim 7, wherein the housing is hermetically connected to a wall of the vacuum chamber.

9. The pressure detecting device according to claim 7, wherein the housing is a metal housing.

10. The pressure detecting device as claimed in claim 7, wherein the light source is a laser light source.

11. The pressure detection device as claimed in claim 5, further comprising: a first heating section;

the first heating unit is provided on a surface or a peripheral side of the focus lens and configured to heat the focus lens.

12. The pressure detecting device as claimed in claim 11,

the first heating part includes: a silicon heating layer or a metal heating layer.

13. The pressure detecting device as claimed in any one of claims 1 to 4, further comprising: isolating the lens;

the isolation lens is arranged on the light incidence side of the light receiver and is configured to prevent particles in the vacuum chamber from being gathered to the light receiver.

14. The pressure detection device as claimed in claim 13, further comprising: a second heating section;

the second heating part is disposed on a surface or a peripheral side of the isolation lens and configured to heat the isolation lens.

15. The pressure detecting device as claimed in claim 14,

the second heating part includes: a silicon heating layer or a metal heating layer.

16. A method for detecting pressure, comprising:

the optical transmitter emits a detection optical signal into a cavity of the vacuum chamber, so that the detection optical signal passes through a working area in the vacuum chamber and is transmitted to the optical receiver;

the optical receiver receives the detection optical signal, converts the detection optical signal into an electrical signal and transmits the electrical signal to a processor;

the processor analyzes the spectrum of the detected optical signal according to the electrical signal, and determines the pressure in the vacuum chamber according to the spectrum.

17. The method as claimed in claim 16, wherein the step of detecting the pressure comprises,

the working area is used for sputtering and/or depositing particles;

the processor also determines a particulate composition and/or particulate defects within the working area based on the spectrum.

18. The method as claimed in claim 16, wherein the pressure detecting device further comprises a focusing lens disposed on a light emitting side of the light emitter;

the pressure detection method further comprises the following steps:

heating the focusing lens during or before the light emitter emits the detection light signal.