CN114373665A - Ion beam etching system with end point detection function - Google Patents
Ion beam etching system with end point detection function Download PDFInfo
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- CN114373665A CN114373665A CN202111585443.8A CN202111585443A CN114373665A CN 114373665 A CN114373665 A CN 114373665A CN 202111585443 A CN202111585443 A CN 202111585443A CN 114373665 A CN114373665 A CN 114373665A
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- signal
- transmission line
- signal transmission
- end point
- point detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
Abstract
The invention discloses an ion beam etching system with an end point detection function, which comprises a carrying platform and a focusing ring, wherein the carrying platform is provided with a plurality of focusing holes; the focusing ring comprises a fixed part, a ring body and a step part, the ring body is fixed on the carrying platform through the fixed part, the lower surface of the step part is connected with the outer diameter of the ring body, and the upper surface of the step part is higher than the upper surface of the wafer; the end point detection device comprises a signal collecting probe, a signal transmission line and a signal processor; the collection end of the signal collection probe is placed in a hole of the step portion, the data output end of the signal collection probe is connected with the signal transmission line, the signal collection probe collects real-time spectrum signals close to the wafer in real time, the collection results are sent to the signal processor through the signal transmission line, and the signal processor calculates and obtains corresponding product group concentration according to the real-time spectrum signals. The invention can improve the intensity, stability and repeatability of the end point detection signal and can not influence the vacuum in the cavity.
Description
Technical Field
The invention relates to the technical field of ion beam etching systems, in particular to an ion beam etching system with an end point detection function.
Background
As the integration density and complexity of devices in integrated circuits continues to increase, tight control over semiconductor processing becomes increasingly important. During processing, the deposited or grown layer on the substrate surface may comprise various forms of silicon, silicon oxide, silicon nitride, metals, etc., and may involve multiple etching steps. If the process is not controlled properly, or the machine status (such as gas flow, pressure, temperature) changes slightly, or there is a difference between wafer batches, and the etching parameters are not adjusted in time, the over-etching will occur to cause the damage or insufficient etching of the next layer of material, which will affect the next process, and further cause the device failure. Therefore, in the etching process, in order to selectively and accurately remove the material in the predetermined area, a real-time monitoring means is required to control the etching process and the etching amount.
End point detection is a commonly used process control means in etching, and methods include Optical Emission Spectroscopy (OES), laser interferometry, mass spectrometry, and the like. Among them, OES is currently the most widely used, and its principle is to detect the end point by detecting the change of the light intensity of the wavelength emitted by a certain reactive chemical group or volatile group in the plasma. At the end point of etching, the light intensity of a specific product group is sharply reduced; the underlying film is exposed to the bombardment of the plasma and the product radicals formed by the reaction of the underlying film with the plasma begin to build up. By monitoring certain specific wavelengths in the plasma reaction, a spectral change detected at the desired etch endpoint is the etch endpoint.
The OES can detect the fine change of the film layer very sensitively; various information in the etching process can be provided in real time; the device is easy to integrate with an etching machine without influencing the etching process; the price is only a fraction of that of mass spectrometric detection equipment. But OES still has disadvantages.
First, the optical spectral intensity of OES is directly proportional to the concentration of product radicals, and when the etching rate is too slow or the area of the etched film is small, the resulting OES signal intensity will be weak, making endpoint detection ineffective. Secondly, OES detects the plasma wavelength of the etching product, and is suitable for plasma etching equipment. For ion beam etching equipment, the plasma density on the surface of the wafer is extremely low in the etching process; and because plasma glow is generated in the ion source chamber and is easily interfered by ion source signals, the real-time state of the film layer on the surface of the wafer is difficult to accurately monitor. Finally, since the intensity variation is usually observed from the observation window on the reaction chamber, the OES signal gradually decreases as the etching products deposit on the observation window, which affects the detection.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the ion beam etching system with the end point detection function, which can improve the end point detection signal intensity, improve the stability and the repeatability of the end point detection and can not influence the vacuum of a cavity.
In order to achieve the purpose, the invention adopts the following technical scheme:
the embodiment of the invention provides an ion beam etching system with an end point detection function, which comprises a carrying platform and a focusing ring 20; the carrier comprises a wafer bearing surface 10 exposed in the vacuum of the reaction cavity, a factory connecting plate 30 isolating the vacuum of the reaction cavity from the atmosphere and a carrier pedestal 40 communicated with the atmosphere, and the focusing ring 20 is arranged around the wafer bearing surface 10; the focusing ring 20 comprises a fixing part, a ring body and a step part, the ring body is fixed on the carrying platform through the fixing part, the wafer 90 is arranged on the ring body, the lower surface of the step part is connected with the outer diameter of the ring body, and the upper surface of the step part is higher than the upper surface of the wafer 90; the end point detection device comprises a signal collecting probe 100, a signal transmission line 102 and a signal processor;
a hole 50 is arranged in the step part; the acquisition end of the signal acquisition probe 100 is arranged in the hole 50, and the data output end of the signal acquisition probe 100 is connected with the signal transmission line 102; the signal collection probe 100 collects real-time spectrum signals near the wafer 90 in real time, and then sends the collected results to the signal processor through the signal transmission line 102, so that the signal processor calculates the corresponding product radical concentration according to the real-time spectrum signals.
Further, the hole 50 is a blind hole, and the focus ring 20 is made of a transparent material; the signal acquisition probe is installed at the closed end close to the blind hole and is used for acquiring the real-time spectrum signal passing through the closed end of the blind hole.
Further, the focus ring 20 is made of sapphire glass, transparent ceramic, or quartz glass.
Further, the hole 50 is a through hole 50;
the data output end of the signal collection probe 100 extends from the focus ring 20 and is sealingly connected to the signal transmission line 102 via a sealed transition unit mounted on the service connection board 30.
Further, the sealing and switching unit comprises a signal transmission line connector 101 and an interface mechanism which are arranged on the plant connection board 30;
the signal transmission line 102 is connected with one end of the signal transmission line connector 101, and the data output end of the signal acquisition probe is hermetically connected with the other end of the signal transmission line connector 101 through an interface mechanism.
Further, the interface mechanism comprises a sealing ring 60, a signal adapter plate 70 and an adapter pressure plate 80;
a groove is arranged at the position where the factory service connecting plate 30 is connected with the tail end of the hole 50, and a sealing ring 60 is placed in the groove; the data output end of the signal collecting probe 100 passes through the sealing ring 60 and is connected with the signal transmission line connector 101 through the signal adapter plate 70; the adapter pressing plate 80 is fixed on the plant connection plate 30 through a fixing part, and the adapter pressing plate 80 is tightly filled between the signal adapter plate 70 and the signal transmission line connector 101, and applies extrusion force to the signal adapter plate 70 and the sealing ring 60, so that the sealing ring 60 is extruded and deformed to form the sealed connection between the data output end and the signal transmission line connector 101.
Further, the signal adapting board 70 is made of a transparent material, and an opaque cladding structure is coated on the outer side of the signal adapting board.
Furthermore, a threaded hole is formed in the switching pressing plate 80, a threaded structure matched with the outer wall of the signal transmission line connector 101 is arranged on the inner wall of the threaded hole, and the signal transmission line connector 101 is fixed on the switching pressing plate 80 in a screwing mode into the threaded hole.
Further, a straight hole is formed in the adapter pressing plate 80, and the signal adapter connector is fixed in the straight hole through a fixing piece.
Further, the stage is provided with a rotation device; the signal transmission line 102 is embedded in the pedestal 40, and one end of the signal transmission line, which is far away from the signal collecting probe 100, penetrates out of the vacuum chamber through the hollow cavity inside the rotating shaft of the rotation device, and is connected with a signal processor arranged outside the vacuum chamber.
The invention has the beneficial effects that:
according to the ion beam etching system with the end point detection function, the signal collection probe is placed in the focusing ring, so that the signal collection probe can carry out end point detection at a position close to a wafer, and the strength of an end point detection signal is improved; meanwhile, the focusing ring is bombarded by the ion beam all the time in the etching process, so that the reduction of signal intensity caused by the deposition of etching products is avoided, and the stability and the repeatability of the end point detection are improved; in addition, the connecting wire of the detection probe can be connected to the outside of the cavity through the internal structure of the carrier, and the vacuum of the cavity cannot be influenced.
Drawings
FIG. 1 is a side view of a focus ring of an embodiment of the present invention.
Fig. 2 is a top view of a focus ring of an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an ion beam etching system with an endpoint detection function according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a seal adapter unit according to an embodiment of the present invention.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings.
It should be noted that the terms "upper", "lower", "left", "right", "front", "back", etc. used in the present invention are for clarity of description only, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not limited by the technical contents of the essential changes.
The end point detection device of the embodiment is obtained based on the structural design of a conventional ion beam etching system, does not influence the normal use of the ion beam etching system, and does not need to greatly change the structure of the ion beam etching system. Therefore, the key detection device of the embodiment has extremely high popularization and application values.
Principle of end point detection
Referring to fig. 1-3, the ion beam etching system includes a stage and a focus ring 20; the carrier is used for bearing a wafer 90 and is positioned in the IBE etching reaction cavity, the carrier comprises a wafer bearing surface 10 exposed in the vacuum of the reaction cavity, a factory connecting plate 30 for isolating the vacuum and the atmosphere in the reaction cavity and a carrier pedestal 40 communicated with the atmosphere, and the focusing ring 20 is arranged around the wafer bearing surface 10; focus ring 20 includes fixed part, ring body and step portion, and the ring body is fixed in on the microscope carrier through the fixed part, and wafer 90 arranges in on the ring body, and the step portion lower surface links to each other with the ring body external diameter, and the step portion upper surface is higher than wafer 90 upper surface.
The end point detection device is arranged on the carrier and comprises a signal collection probe 100, a signal transmission line 102 and a signal processor. A hole 50 is arranged in the step part; the acquisition end of the signal acquisition probe 100 is arranged in the hole 50, and the data output end of the signal acquisition probe 100 is connected with the signal transmission line 102; the signal collection probe 100 collects real-time spectrum signals near the wafer 90 in real time, and then sends the collected results to the signal processor through the signal transmission line 102, so that the signal processor calculates the corresponding product radical concentration according to the real-time spectrum signals.
In the embodiment, the signal collecting probe is arranged in the focusing ring, so that the signal collecting probe can carry out end point detection at a position close to the wafer, and the intensity of an end point detection signal is improved; meanwhile, the focusing ring is bombarded by the ion beam all the time in the etching process, so that the reduction of signal intensity caused by the deposition of etching products is avoided, and the stability and the repeatability of the end point detection are improved.
The stage has a rotation device. During the process, the wafer carrying surface 10 of the stage is in a self-rotating state. The carrier rotates around the rotation axis through the rotation axis connected to the chamber, so that the wafer bearing surface 10 faces the ion beam at a certain angle (-90 to 90 °). The ion beam physically or chemically etches the surface film of the wafer 90 at a certain angle. The signal collection probe 100 collects the spectrum signal on the surface of the wafer 90 during the etching process, and transmits the collected spectrum signal to the signal processor through the signal transmission line 102, so that the signal processor processes the spectrum signal.
(II) sealing structure
(2.1) the holes 50 are blind holes
The hole 50 is preferably a blind hole, and the end of the hole 50 close to the signal collecting probe 100 for receiving the light intensity signal is a closed end of the blind hole, and at this time, the focusing ring 20 should be made of a transparent material, preferably sapphire glass, transparent ceramic, quartz glass, etc., so as to facilitate the signal collecting probe 100 to receive the spectrum signal through the closed end of the blind hole.
(2.2) the holes 50 are through holes
As one preferred example, in order to reduce the processing difficulty of the hole 50, the hole 50 may be a through hole (at this time, the material of the focusing ring may be a transparent material, or an opaque material, such as ceramic, etc.), and at this time, a sealing structure should be disposed at a connection position of the signal acquisition probe 100 and the signal transmission line. Specifically, the data output end of the signal collection probe 100 extends from the focus ring 20 and is sealingly connected to the signal transmission line 102 via a sealed transition unit mounted on the service connection board 30.
Illustratively, the hole 50 has an arc-shaped structure, one end of which is open to the service connection board 30 and perpendicular to the service connection board 30, and the other end of which extends to the inner sidewall of the step portion, and is located above the wafer 90 and forms an included angle with the plane of the wafer, so as to avoid the structural interference between the information collecting probe 100 and the wafer 90.
(2.3) sealing the adapting unit
The sealing switching unit comprises a signal transmission line connector 101 and an interface mechanism which are arranged on the plant connection board 30; the signal transmission line 102 is connected with one end of the signal transmission line connector 101, and the data output end of the signal acquisition probe is hermetically connected with the other end of the signal transmission line connector 101 through an interface mechanism.
Referring to fig. 3 and 4, the end of the signal collection probe 100 that is connected to the signal transmission line connector 101 extends from the focus ring 20 and is connected to the signal transmission line connector 101 through an interface mechanism on the factory interface board 30. The interface mechanism on the plant connection board 30 includes a sealing ring 60, a signal adapter board 70 (the signal adapter board 70 is made of transparent material, preferably sapphire or glass; the signal adapter board 70 is covered with a skin layer to prevent light signal leakage) and an adapter pressing board 80. The connection between the house service connection plate 30 and the end of the hole 50 is provided with a groove, and the sealing ring 60 is arranged in the groove. The end of the signal collection probe 100 that is connected to the signal transmission line connector 101 passes through the seal ring 60. The signal collection probe 100 is connected to a signal transmission line connector 101 via a signal adapter plate 70. One end of the signal adapting board 70 is tightly combined with the signal collecting probe 100, and the other end of the signal adapting board 70 is tightly combined with the signal transmission line connector 101. The adapter pressing plate 80 is pressed on the surface of the signal adapter plate 70 connected with the signal transmission line connector 101, forms extrusion force on the signal adapter plate 70 and the sealing ring 60, and completes the sealing between atmosphere and vacuum through the extrusion deformation of the sealing ring 60. The adaptor pressing plate 80 is fixed to the plant connection plate 30 by a fixing member.
The adapter press plate 80 can press the signal adapter plate 70, and a fixing hole is formed on the adapter press plate 80. The fixing hole is opened at the joint of the adapter pressing plate 80 and the signal transmission line connector 101. The fixing holes can adopt threaded holes or straight holes. When the fixing hole is a threaded hole, threads matched with the fixing hole are arranged on the periphery of the signal transmission line connector 101, and the signal transmission line connector 101 is screwed into the fixing hole for fixing; when the fixing hole is a straight hole, the signal transmission line connector 101 extends into the fixing hole and is fixed by the fixing member. The signal transmission line connector 101 and the signal collection probe 100 are coaxial.
(2.4) Signal Transmission line Structure
The signal transmission line connector 101 is connected to a signal transmission line 102. The signal transmission line 102 is placed in the stage base 40. The end of the signal transmission line 102 away from the signal transmission line connector 101 passes through the hollow structure inside the rotating shaft and out of the cavity. Finally, the signal transmission line 102 is connected to a signal processor for light intensity processing. Therefore, the connecting wire of the detection probe is connected to the outside of the cavity through the internal structure of the carrier, and the vacuum of the cavity cannot be influenced.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (10)
1. An ion beam etching system with an end point detection function is characterized by comprising a carrying platform and a focusing ring (20);
the bearing platform comprises a wafer bearing surface (10) exposed in the vacuum of the reaction cavity, a factory service connecting plate (30) for isolating the vacuum and the atmosphere in the reaction cavity and a bearing platform base (40) communicated with the atmosphere, and the focusing ring (20) is arranged around the wafer bearing surface (10);
the focusing ring (20) comprises a fixing part, a ring body and a step part, the ring body is fixed on the carrying platform through the fixing part, the wafer (90) is arranged on the ring body, the lower surface of the step part is connected with the outer diameter of the ring body, and the upper surface of the step part is higher than the upper surface of the wafer (90);
the endpoint detection device comprises a signal collection probe (100), a signal transmission line (102) and a signal processor;
set up porose (50) in the step portion, the collection end of signal collection probe (100) is placed in hole (50), and the data output end and the signal transmission line (102) of signal collection probe (100) are connected, signal collection probe (100) carry out real-time collection to the real-time spectral signal that closes on wafer (90) department to send the collection result to signal processor via signal transmission line (102), signal processor calculates according to real-time spectral signal and obtains corresponding product group concentration.
2. The ion beam etching system with the end point detection function according to claim 1, wherein the hole (50) is a blind hole, and the focus ring (20) is made of a transparent material;
the signal acquisition probe is installed at the closed end close to the blind hole and is used for acquiring the real-time spectrum signal passing through the closed end of the blind hole.
3. The ion beam etching system with end point detection function according to claim 2, wherein the focus ring (20) is made of sapphire glass, transparent ceramic or quartz glass.
4. The ion beam etching system with end point detection function according to claim 1, wherein the hole (50) is a through hole (50);
the data output end of the signal collecting probe (100) extends out of the focusing ring (20) and is connected with the signal transmission line (102) in a sealing mode through a sealing switching unit installed on a factory service connecting board (30).
5. The ion beam etching system with end point detection function according to claim 4, wherein the sealing and switching unit comprises a signal transmission line connector (101) and an interface mechanism arranged on a factory connection board (30);
the signal transmission line (102) is connected with one end of the signal transmission line joint (101), and the data output end of the signal acquisition probe is hermetically connected with the other end of the signal transmission line joint (101) through an interface mechanism.
6. The ion beam etching system with end point detection function according to claim 5, wherein the interface mechanism comprises a seal ring (60), a signal adapter plate (70) and an adapter pressure plate (80);
a groove is arranged at the position where the factory service connecting plate (30) is connected with the tail end of the hole (50), and a sealing ring (60) is arranged in the groove;
the data output end of the signal collecting probe (100) penetrates through the sealing ring (60) and is connected with the signal transmission line connector (101) through the signal adapter plate (70);
the switching pressing plate (80) is fixed on the plant connection plate (30) through a fixing part, the switching pressing plate (80) is tightly filled between the signal switching plate (70) and the signal transmission line connector (101), and extrusion force is applied to the signal switching plate (70) and the sealing ring (60), so that the sealing ring (60) is extruded and deformed to form the sealing connection between the data output end and the signal transmission line connector (101).
7. The ion beam etching system with end point detection as claimed in claim 6, wherein the signal adapting plate (70) is made of transparent material, and its outer side is covered with an opaque cladding structure.
8. The ion beam etching system with the end point detection function according to claim 6, wherein the adapter pressing plate (80) is provided with a threaded hole, the inner thread of the threaded hole is matched with the outer wall of the signal transmission line connector (101), and the signal transmission line connector (101) is fixed on the adapter pressing plate (80) in a manner of being screwed into the threaded hole.
9. The ion beam etching system with the end point detection function as claimed in claim 6, wherein a straight hole is formed on the adapter press plate (80), and the signal adapter connector is fixed in the straight hole through a fixing member.
10. The ion beam etching system with an end point detecting function according to any one of claims 1 to 9, wherein the stage has a rotation device;
the signal transmission line (102) is embedded in the bearing pedestal (40), and one end of the signal transmission line, which is far away from the signal collecting probe (100), penetrates out of the vacuum chamber through a hollow cavity in the rotating shaft of the rotation device and is connected with a signal processor arranged outside the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111585443.8A CN114373665A (en) | 2021-12-22 | 2021-12-22 | Ion beam etching system with end point detection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111585443.8A CN114373665A (en) | 2021-12-22 | 2021-12-22 | Ion beam etching system with end point detection function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114373665A true CN114373665A (en) | 2022-04-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111585443.8A Pending CN114373665A (en) | 2021-12-22 | 2021-12-22 | Ion beam etching system with end point detection function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114373665A (en) |
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2021
- 2021-12-22 CN CN202111585443.8A patent/CN114373665A/en active Pending
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