CN115592555A - Surface trimmer for silicon-based material and application of surface trimmer in trimming and polishing - Google Patents
Surface trimmer for silicon-based material and application of surface trimmer in trimming and polishing Download PDFInfo
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- 239000002210 silicon-based material Substances 0.000 title claims abstract description 120
- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 238000009966 trimming Methods 0.000 title description 4
- 238000012545 processing Methods 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000003054 catalyst Substances 0.000 claims abstract description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052737 gold Inorganic materials 0.000 claims abstract description 3
- 239000010931 gold Substances 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a surface trimmer for silicon-based materials and application thereof in shaping and polishing, wherein the trimmer comprises a processing workpiece and processing liquid; the surface of the processing workpiece is coated with a catalyst layer; the catalyst layer includes at least one of platinum, gold, nickel, iron, and silver; the processing liquid includes water. The surface trimmer for the silicon-based material, which is developed by the invention, can ensure high surface precision and lower surface roughness in the surface processing process of the optical element and simultaneously avoid subsurface damage generated on the surface of the silicon-based material in the processing process.
Description
Technical Field
The invention relates to the technical field of optical element processing, in particular to a surface dresser for silicon-based materials and application thereof in shaping and polishing.
Background
The development in the fields of aerospace, astronomical exploration, military, energy, medical treatment and the like puts higher demands on the requirements of optical elements in ultra-precise components, and optical element materials represented by quartz crystals, quartz glass, microcrystalline glass and the like are widely applied to the fields of optical imaging, high-power laser systems, laser nuclear fusion, solar cells, space observation, sensors, detectors and the like. Optical elements are currently required to have strict Power Spectral Density (PSD) specifications to achieve low light scattering and high imaging performance. This means that the manufactured optical element requires not only high surface accuracy and low surface roughness, but also strict control of Mid-Spatial Frequency (MSF) errors and Subsurface Damage (SSD).
Currently, optical elements typified by Ion Beam Polishing (IBP), magneto-rheological Polishing (MRF), computer Controlled Optical surface shaping (CCOS) have been proposed so that the processing methods are successively proposed. Ion beam polishing utilizes the ion beam sputtering principle to complete material removal processing, and an accelerator obtains high-energy ion beams and impacts the surface of a material, so that most energy is transferred to atoms in a material layer. The impacted atoms transmit energy to surrounding atoms simultaneously to generate atom cascade motion, and the material atoms are directly or sputtered and fall off due to multiple impacts. Ion beam polishing is used as a non-contact atomic-scale removal processing method, so that residual stress is not generated on the processed surface. In order to produce an ion beam and to have a large free path for the ions, the process needs to be performed in a vacuum environment. For large-sized workpieces, a vacuum chamber with corresponding size is often needed for processing, so that the application of processing large-caliber optical elements is limited, and in addition, the processing efficiency is low due to the atomic removal resolution of the technology. Ion beam polishing methods have been reported to introduce ion contamination problems on the surface of the processed material. The magnetorheological polishing technology mainly utilizes magnetorheological fluid and a magnetic absorption polishing disk to process. The magnetorheological fluid is circularly brought into a polishing area with a tiny distance between a workpiece and the polishing disc by the polishing disc, in the area, the magnetorheological fluid generates rheological effect under the action of a high-gradient magnetic field to become hard and increase the viscosity, and magnetic particles in the magnetorheological fluid are arranged into a chain along the direction of the magnetic field intensity, so that a protruded ribbon with a certain shape is formed. The polishing powder particles contained in the magnetorheological fluid are not magnetic, so that the polishing powder particles can be extruded to float above the weak magnetic field intensity, a flexible polishing die is formed on the protruded ribbon, and when the flexible polishing die flows through a small gap formed by the workpiece and the moving disc under the driving of the moving disc, large shearing force can be applied to the surface of the workpiece, and the surface material of the workpiece can be removed. In principle, the magnetorheological polishing technology is a contact type processing mode, scratches can be introduced to the surface in the processing process, and the processing quality is influenced. Due to the limitation of the radius of the polishing wheel, the magnetorheological technology is not suitable for processing curved surfaces with smaller curvature radius. The computer controlled optical surface forming technology is based on traditional polishing technology and adopts polishing disc with diameter smaller than that of workpiece to realize optical mirror surface processing. The technology is to control the polishing tool by means of a computer, precisely control the staying time and the technological parameters of the polishing disc at the positions of the workpiece, realize the precise removal of the surface material of the optical element, and is a deterministic optical element processing method. The polishing disc gadget CCOS technology has developed to date, but this technology still has some problems. The long-term stability of the removal function is poor as the polishing disk wears during processing. A certain load is needed in the processing process to realize the mechanical shearing action, and the sub-surface damage problem exists on the surface of the material.
Therefore, it is a current urgent task to develop a surface conditioner for silicon-based materials, which can ensure high surface precision and low surface roughness during the surface processing of optical elements, and simultaneously avoid subsurface damage generated on the surface of the silicon-based materials during the processing.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a silicon-based material surface dresser, which can realize the polishing processing of the surface of a silicon-based material to obtain the surface of the silicon-based material with low roughness, and can not cause surface and sub-surface damage on the surface of the silicon-based material. The precise shaping processing of the surface material of the silicon-based material can be realized.
The invention also provides the application of the trimmer in surface modification of the silicon-based material.
The invention also provides application of the surface dresser for the silicon-based material in polishing the surface of the silicon-based material.
A silicon-based material surface conditioner according to an embodiment of a first aspect of the present invention includes a processing workpiece and a processing liquid; the surface of the processing workpiece is coated with a catalyst layer; the catalyst layer includes at least one of platinum, gold, nickel, iron, and silver; the processing liquid includes at least one of water and hydrofluoric acid.
The silicon-based material surface dresser provided by the embodiment of the invention has at least the following beneficial effects:
in the processing process of the silicon-based material, the surface of a processed workpiece is coated with a catalyst layer (platinum Pt and the like) material, in the processing process, under the action of the catalyst layer, a processing liquid is hydrolyzed to generate a hydroxyl radical group which is attached to the surface of the silicon-based material, and then a Pt-O-Si bond is formed on the surfaces of the Pt and the silicon-based material to obtain a 5-coordinated silicate structure, because the existence of the Pt-O-Si bond weakens the bonding force of atoms between silicon and the substrate material of the silicon-based material, the bonded silicon atoms are removed under the continuous processing of the processed workpiece, and the reaction equation of the removal mechanism is as follows:
H 2 O+2Pt→Pt-OH+Pt-H (I)；
H 2 O+2Si→Si-OH+Si-H (II)；
Pt-OH+Si-OH→Pt-O-Si+H 2 O (III)。
according to the material removal mechanism, the solution does not react with the silicon-based material without the action of the catalytic layer in the processed workpiece. The removal of silicon-based materials is therefore limited to the region in which the catalytic layer acts during the processing, which is a deterministic process. Because atoms in the rough area of the surface of the workpiece form covalent bonds with Pt atoms preferentially, the atoms are removed preferentially in the processing process to obtain a surface with extremely low roughness, no abrasive particles participate in the processing process of the silicon-based material, and the material removal mechanism is based on chemical action, so that the surface of the silicon-based material cannot be damaged secondarily.
Furthermore, the surface modification process of the silicon-based material occurs only in the region of the catalytic action. Therefore, when the processing workpiece is processed at a fixed point, the catalyst layer is not abraded and can not be consumed due to reaction because of no contact and stress action in the processing process, and under the conditions, the size of a region where the surface finishing of the silicon-based material reacts is determined, and the reaction rate is constant, so that the precise finishing processing of the surface material of the silicon-based material can be realized.
According to the invention, at least one of water and hydrofluoric acid is used as the processing liquid, and other processing liquids are not introduced in the surface finishing of the silicon-based material, so that the environmental pollution is avoided; when water is used as the processing liquid, the method utilizes the catalyst to promote the hydrolysis of the solution to form hydroxyl groups, so the material removal process is based on chemical action, the participation of abrasive particles is not needed in the processing process, and a subsurface damage layer is not generated.
According to some embodiments of the invention, the process fluid is given at a rate of 0.1L/min to 2L/min.
According to some embodiments of the invention, the work piece comprises at least one of a polishing disk, a polishing wheel, and a polishing head.
According to some embodiments of the invention, the silicon-based material comprises at least one of silicon dioxide crystal, silicon carbide and single crystal silicon.
In a second aspect, the invention provides a use of said dresser for surface modification of a silicon-based material.
According to some embodiments of the invention, the surface modifying comprises the steps of:
a1, measuring a distribution function Z (x, y) of the amount to be removed of the silicon-based material;
measuring the removal amount of the dresser and the silicon-based material in unit time; obtaining a removal function R (x, y) according to the removal amount of the unit time;
a2, obtaining a distribution function T (x, y) of residence time according to the distribution function of the amount to be removed and the removal function, wherein the calculation method is shown by referring to a formula (I), wherein
Represents a convolution calculation; obtaining a processing path code through the distribution function of the residence time;
and A3, importing the machining path code into a numerical control machining system and then machining the silicon-based material.
According to some embodiments of the present invention, the method for testing the to-be-removed amount distribution function is to calculate a difference between an ideal surface shape parameter of the silicon-based material and an actual surface shape parameter of the silicon-based material.
The principle of silicon-based material surface modification is that when a machined workpiece is machined at a fixed point, because the surfaces of the machined workpiece and a silicon-based material are not in contact and stress action in the machining process, a catalyst layer is not abraded and cannot be consumed due to reaction, under the conditions, the size of a reaction area is determined, the reaction rate is constant, and the material removal amount distribution in the interaction area of the machined workpiece and the surface of the silicon-based material in unit time is kept stable, namely the range, the depth and the shape of the surface action of the silicon-based material are determined (material removal spots are stable), so that a stable to-be-removed amount distribution function Z ((x, y) (the ratio of the removal spots to the machining time) can be obtained on the surface of the workpiece.
The silicon-based material surface modification method comprises the following steps of firstly, detecting an initial surface shape of a workpiece by using a surface shape measuring instrument, and comparing the initial surface shape with an ideal surface shape (designed surface shape) to obtain a distribution function Z (x, y) of the quantity to be removed of each point on the surface of the workpiece; calculating the residence time distribution of the processing workpiece at each point on the surface of the silicon-based material by combining the amount to be removed of each point on the surface of the silicon-based material and a distribution function Z (x, y) of the amount to be removed through a residence time algorithm; further converting the residence time of each point into the movement speed of the processed workpiece, and exporting a corresponding grating processing path code, namely a numerical control machine G code; and finally, operating a corresponding grating processing path code on the numerical control processing system for processing to realize the finishing of the surface shape of the silicon-based material. The core problem of the profiling process is the relationship between the distribution function Z (x, y) of the amount to be removed, the removal function R (x, y), and the distribution function T (x, y) of the residence time at each point. The scanning refers to the processing of the silicon-based material by the processing workpiece, and the scanning refers to the continuous processing of the processing workpiece on different positions of the workpiece at a certain movement speed, namely, the scanning refers to the continuous processing of the processing workpiece on different positions of the workpiece, wherein the scanning refers to the processing of the silicon-based material by the processing workpiece, and the scanning does not stay at a certain position for a certain time for processing. The mathematical relationship between the removal amount distribution function Z (x, y), the removal function R (x, y), and the distribution function T (x, y) of the residence time is thus described as: the removal amount distribution function Z (x, y) is a convolution of the distribution function T (x, y) of the residence time and the division function R (x, y). The mathematical expression is as follows:
wherein Z (x, y) can be measured by a surface shape measuring instrument, and R (x, y) can be obtained by measuring the removal amount of the trimmer and the silicon-based material in unit time;
representing a convolution calculation. The solution of T (x, y) is therefore essentially the process of deconvolving Z (x, y) and R (x, y) for each point.
According to some embodiments of the invention, the process of deconvolution includes a system of linear equations method and a pulse iteration method.
The deconvolution algorithm used is a linear equation system method and a pulse iteration method:
principle of linear equation system:
discretizing the surface shape, wherein error points and processing points exist in the processing process, the error points are the distribution of the surface shape errors obtained by the detection device and correspond to the removal amount distribution points, and are marked as (xi, yi), and m points are provided in total; the machining point is a machining point which resides during calculation and machining and is denoted by (pj, qj), and n points are provided in total. Then there is a removal amount for the error point (xi, yi) that is removed by all the resident points (pj, qj), the expression is as follows:
z is the actual removal, written in matrix vector form as follows
Where Tj is the dwell time of the jth processing point, and Rij is the removal amount of the jth processing point to the ith error point. In general, in order to find out the proper non-negative residence time, the number of error points is larger than the number of processing points, i.e. m is larger than n, the matrix equation shown above is an over-linear equation system, and the residence time which can minimize the surface shape error RMS after processing can be obtained by solving the non-negative least square solution of the equation.
Principle of pulse iterative method:
when solving the residence time, the residence time of the position with large removal amount is usually long, so the residence time distribution can be fitted by the distribution of the removal amount, and the calculation method is as follows:
T 0 ＝Z/B；
where B is the volume of the removal function, T 0 Predicting an initial value for the dwell time, E 0 For predicting the surface shape error after the initial value calculation, the following iterative calculation is carried out:
wherein T is k For the k-th iterationCalculated residence time, E k For the surface shape error obtained by the k-th iteration calculation, epsilon is a relaxation factor, and if epsilon is large, convergence is fast, but if epsilon is too large, divergence is easy, and the epsilon is generally less than 1.
And calculating the RMS value of the surface shape error after each iteration, and stopping the iteration when the RMS value does not decrease along with the number of iterations to obtain a better residence time value. Specifically, if the residual error is positive, the residence time is insufficient, the residence time is increased in proportion, if the residual error is negative, the residence time is overlarge, the residence time is reduced in proportion, and the variation of the residence time in each time is smaller and smaller due to the existence of the relaxation factor, so that the convergence result is obtained.
The material removing area of the method is limited to the catalyst action area, the method belongs to deterministic processing, and processing tools with different shapes and sizes can be designed for polishing and modifying processing according to requirements. The size of the processed workpiece can be correspondingly designed according to the size of the silicon-based material.
According to some embodiments of the present invention, polishing tools of different shapes are designed for machining. The removal function patterns generated by polishing tools of different shapes may be different, but the dressing and polishing principles for the workpiece are the same, so that the method for designing different polishing tools based on the material removal principle and the dressing concept in the method of the present invention is still covered by the solution of the present invention.
According to some embodiments of the invention, the actual surface shape parameter of the silicon-based material is measured by an instrument.
According to some embodiments of the invention, the instrument comprises a laser interferometer.
According to some embodiments of the present invention, the applying to the surface modification of the silicon-based material further includes, after the step A3, detecting an actual surface shape parameter of the silicon-based material, and if the actual surface shape parameter of the silicon-based material does not meet the requirement of the interferometric measurement, performing the steps A1 and A2.
The surface dresser of the optical element does not need a vacuum environment in the surface dressing of the optical element, and the operation is simple.
In a third aspect, the present invention provides a use of a dresser for polishing a surface of a silicon-based material.
According to some embodiments of the invention, the use of the dresser for surface polishing of a silicon-based material, the surface polishing comprising the steps of: polishing the surface of the silicon-based material by using the trimmer, wherein the rotating speed of the processed workpiece is 0-5000 rpm; the polishing time is 20 min-300 min.
According to some embodiments of the invention, the application of the dresser to surface polishing of a silicon-based material further comprises detecting roughness of the silicon-based material, and if the roughness of the silicon-based material does not meet the interferometric requirements, the dresser is used for polishing the surface of the silicon-based material again.
According to some embodiments of the invention, the application of the resurfacer to the resurfacing of a silicon-based material further comprises removing impurities from the work piece prior to the inspection of the profile.
According to some embodiments of the invention, the removing impurities comprises cleaning the removing impurities.
According to some embodiments of the invention, the method of cleaning comprises ultrasonic cleaning.
According to some embodiments of the invention, the application of the dresser to polishing of a surface of a silicon-based material further comprises cleaning the work piece after the polishing.
According to some embodiments of the invention, the method of cleaning comprises ultrasonic cleaning.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a processing mechanism of a resurfacing tool for silicon-based materials according to examples 2,4 of the present invention;
FIG. 2 is a mechanism for processing a dresser for a silicon-based material according to examples 2,4 of the present invention;
FIG. 3 is a mechanism for processing a dresser for a silicon-based material according to examples 2,4 of the present invention;
FIG. 4 is a schematic view of a surface dresser for a silicon-based material for polishing a surface of the silicon-based material according to example 2 of the present invention;
FIG. 5 is a roughness measurement of a surface conditioner of a silicon-based material of example 2 of the present invention before surface polishing of the silicon-based material;
FIG. 6 is a roughness measurement of a dresser for a silicon-based material according to example 2 of the present invention after polishing the surface of the silicon-based material;
FIG. 7 is a flowchart of a method for polishing the surface of a silicon-based material by a dresser of the silicon-based material according to example 2 of the present invention;
FIG. 8 is a schematic representation of a dresser for a silicon-based material as provided in examples 1, 3;
FIG. 9 is a flowchart of a method for modifying the surface of a silicon-based material by a surface conditioner for silicon-based materials according to example 4 of the present invention;
FIG. 10 is a simulated residual error of a surface conditioner of a silicon-based material in accordance with example 4 of the present invention in a surface modification of the silicon-based material;
FIG. 11 is a simulated residual error of the surface conditioner of a silicon-based material in example 4 of the present invention on the surface modification of the silicon-based material;
FIG. 12 is a graph showing the residual error of a dresser for a silicon-based material according to example 4 of the present invention after actual processing of a surface dressing for a silicon-based material;
FIG. 13 shows the case where the workpiece 104 is processed into a polishing pad in examples 1 and 3;
FIG. 14 is a view showing a case where a polishing head is used for processing the workpiece 104 in examples 1, 3;
reference numerals: a working fluid supply device (solution supply) 105; machining the workpiece 104; a fixed disk 106; a workpiece to be processed 107; a machining workpiece rotation shaft 108; a support portion 110; a base 101; a vertical rod 102; a first cross bar 103.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by reference are exemplary only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention. The method can change the type and the size of the trimmer according to the requirements of the shape, the size and the like of the silicon-based material, and realize the surface trimming of the silicon-based material.
In the description of the present invention, if there are first, second, etc. described, it is only for the purpose of distinguishing technical features, and it is not understood that relative importance is indicated or implied or that the number of indicated technical features is implicitly indicated or that the precedence of the indicated technical features is implicitly indicated.
In the description of the present invention, it should be noted that unless otherwise explicitly defined, terms such as arrangement, installation, connection and the like should be broadly understood, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
Example 1
The present embodiment provides a surface conditioner for silicon-based materials, which is structured as shown in fig. 8, and comprises:
the supporting part 110 is provided with a base 101, a vertical rod 102 and a first cross rod 103; one end of the upright rod 102 is vertically connected with the base 101, and the other end is vertically connected with the first cross rod 103;
a processing workpiece 104, wherein the processing workpiece 104 is connected with one end of the first cross rod 103 far away from the upright rod 102;
a fixing plate 106, wherein the fixing plate 106 is used for fixing the workpiece to be processed 107 so as to enable the workpiece to be processed 107 to be contacted with the processing workpiece 104;
a processing workpiece rotating shaft 108, the processing workpiece rotating shaft 108 being vertically connected to a central position of the fixed platen 106, for providing rotation to the fixed platen 106 or stopping the rotating operation;
it will be appreciated that the first cross bar 103 can move up and down along the upright 102; the upright 102 is movable along the support 110;
in this embodiment, the mechanism of the resurfacing device is shown in FIGS. 1 to 3,
it is further understood that the surface of the work piece 104 is coated with a catalyst layer of platinum.
The working fluid in the working fluid supply device 105 is water.
Fig. 13 shows the case where the work 104 in this embodiment is a polishing pad;
when the work piece 104 in this embodiment is a polishing wheel, it is shown in fig. 14.
Example 2
The invention provides an application of a silicon-based material surface dresser in example 1 in silicon-based material surface polishing, wherein a flow chart of a method for polishing the silicon-based material surface dresser on a silicon-based material surface is shown in fig. 7, a polishing mechanism is shown in fig. 4, and the method comprises the following specific steps:
s1, placing a silicon-based material (workpiece) on a single crystal silicon surface with the size of 15mm-15mm on a surface dresser, and carrying out a polishing process, wherein the polishing time is 4h, the rotating speed of a polishing disc substrate is set to be 20r/min, the water outlet speed is 0.15L/min, and a catalyst layer is platinum.
And S2, taking out the polished wafer after polishing, carrying out ultrasonic cleaning, and detecting the surface roughness after polishing by using a white light interferometer to obtain the results shown in FIG. 5 and FIG. 6. It is known from the figure that the surface roughness (figure 6) of the workpiece surface at 5 μm by 5 μm is reduced to 0.0517nm, and the surface roughness (figure 5) at 1 μm by 1 μm is reduced to 0.0376nm, so that the obtained silicon-based material has extremely high precision, realizes sub-nanometer polishing, meets the processing requirement, and finishes processing.
Example 3
The present embodiment provides a resurfacing device for silicon-based materials, which is configured as shown in fig. 8, and includes:
the supporting part 110 is provided with a base 101, a vertical rod 102 and a first cross rod 103; one end of the upright rod 102 is vertically connected with the base 101, and the other end is vertically connected with the first cross rod 103;
a processing workpiece 104, wherein the processing workpiece 104 is connected with one end of the first cross rod 103 far away from the upright rod 102;
a fixing disc 106, wherein the fixing disc 106 is used for fixing a workpiece to be processed 107 so as to enable the workpiece to be processed 107 to be contacted with the processing workpiece 104;
a processing workpiece rotating shaft 108, the processing workpiece rotating shaft 108 being vertically connected to a central position of the fixed platen 106, for providing rotation to the fixed platen 106 or stopping the rotating operation;
it will be appreciated that the first cross bar 103 can move up and down along the upright 102; the upright 102 is movable along the support 110;
in this embodiment, the mechanism of the resurfacing device is shown in FIGS. 1 to 3,
it is further understood that the surface of the work piece 104 is coated with a catalyst layer.
The working fluid in the working fluid supply device 105 is water;
fig. 13 shows the case where the work 104 in this embodiment is a polishing pad;
fig. 14 shows the case where the work 104 is a polishing disk in this embodiment.
Example 4
The invention provides an application of a surface dresser for silicon-based materials in embodiment 3 in surface dressing of silicon-based materials, and a flow chart of a method in the embodiment is shown as figure 9, and comprises the following specific steps:
s1, trimming the surface shape of the monocrystalline silicon with the size of 15mm and 15mm, carrying out ultrasonic cleaning on the monocrystalline silicon, and then putting the monocrystalline silicon into a laser interferometer to detect the surface shape to obtain surface shape data. And calculating a difference value according to the ideal surface shape parameters and the actually measured surface shape data, setting the target surface shape as an ideal plane, and setting the extra removal amount as 2.5nm to obtain removal amount distribution data (a distribution function Z (x, y) of the amount to be removed).
And S2, etching the silicon surface for 1min under the conditions that the solution is pure water and the catalyst layer is Pt, calculating the removal amount, and obtaining a removal function, namely obtaining the removal function by calibrating the removal amount for 1 min. And selecting an algorithm as a pulse iteration method through computer simulation calculation according to the surface shape error distribution characteristics.
S3, calculating residence time: according to the surface shape error distribution and the removal function, computer simulation calculation is carried out through a pulse iteration algorithm to obtain residence time distribution, grating processing path codes are obtained according to residence time, a simulation result is checked, and residual errors obtained through simulation are shown in figures 10 and 11.
And S4, putting the sample to be processed into the device, introducing the generated processing code into a numerical control processing system, processing for a total processing time of 116min, carrying out ultrasonic cleaning after processing, and detecting the surface shape again to obtain the surface shape as shown in FIG. 12.
The PV value of the surface shape obtained after simulation of the machining process in the machining area 15mm + 15mm is below 4nm, the RMS value is 0.34nm, the contact area of the catalyst layer and the machining sample at the extreme edge of the machining area is only half of the inner machining area, the flowing state of the solution is influenced, the removal rate is changed due to the change of the contact area, the simulation result is greatly different from the actual machining result, the evaluation area needs to be reduced to the area 14mm + 14mm, the PV value of the area 14mm + 14mm is below 2nm, the RMS value is 0.28nm, the RMS convergence ratio reaches 61.86 compared with the original surface shape, the effect is better, the requirement can be basically met, and the machining is finished.
Comparative example 1
This comparative example provides a surface conditioner of a silicon-based material, and differs from example 3 in that the surface excluding the worked piece 104 in example 1 is not coated with the catalyst layer platinum, and the rest of the conditions are the same as those in example 3.
Comparative example 2
The present comparative example provides a surface conditioner for a silicon-based material, and the comparative example is different from example 4 in the use of the surface conditioner for a silicon-based material in comparative example 1 for the surface conditioning of a silicon-based material, and the rest of the conditions are the same as in example 4.
Under the condition, along with the abrasion of a machined workpiece in the machining process, a removal function cannot be kept stable for a long time, so that the surface material can not be accurately removed by combining a computer-aided control technology, and the shaping machining is realized.
Comparative example 3
This comparative example provides a surface conditioner of a silicon-based material, and differs from example 1 in that the surface excluding the worked piece 104 in example 1 is not coated with the catalyst layer platinum, and the rest of the conditions are the same as those in example 1.
Comparative example 4
The present comparative example provides a surface conditioner for a silicon-based material, and the comparative example is different from example 2 in the use of the surface conditioner for a silicon-based material in comparative example 1 for the surface conditioning of a silicon-based material, and the other conditions are the same as in example 2.
Under the condition, the surface of a workpiece to be machined is not coated with a catalyst, so that the condition that a processing liquid is hydrolyzed under the action of a catalyst layer to generate hydroxyl radical groups to be attached to the surface of a silicon-based material, and then Pt-O-Si bonds are formed on the surfaces of Pt and the silicon-based material, so that the surface polishing of the workpiece to be machined is realized.
While the embodiments of the present invention have been described in detail, the present invention is not limited to the embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
1. A dresser for a silicon-based material, the dresser comprising a work piece and a working fluid;
the surface of the processing workpiece is coated with a catalyst layer;
the catalyst layer includes at least one of platinum, gold, nickel, iron, and silver;
the processing liquid includes at least one of water and hydrofluoric acid.
2. Use of the dresser of claim 1 in modifying the surface of a silicon-based material.
3. Use according to claim 2, wherein the surface modification comprises the following steps:
a1, measuring a distribution function Z (x, y) of the amount to be removed of the silicon-based material;
measuring the removal amount of the trimmer and the silicon-based material in unit time; obtaining a removal function R (x, y) according to the removal amount of the unit time;
a2, obtaining a distribution function T (x, y) of residence time according to the distribution function of the amount to be removed and the removal function, and calculating the method by referring to a formula (I)) Shown in which
Represents a convolution calculation; obtaining a processing path code through the distribution function of the residence time;
and A3, the silicon-based material is processed after the processing path code is imported into a numerical control processing system.
4. The application of claim 3, wherein the testing method of the quantity distribution function to be removed is to calculate the difference between the ideal surface shape parameter of the silicon-based material and the actual surface shape parameter of the silicon-based material.
5. The use according to claim 4, wherein the actual profile parameters of the silicon-based material are measured by an instrument; the instrument includes a laser interferometer.
6. The application of claim 3, further comprising detecting the actual surface shape parameters of the silicon-based material after the step A3, and entering the steps A1 and A2 if the actual surface shape parameters of the silicon-based material do not meet the interferometric measurement requirements.
7. Use of a silicon-based material dresser as defined in claim 1 for polishing a surface of a silicon-based material.
8. Use according to claim 7, wherein the surface polishing comprises the following steps:
and polishing the surface of the silicon-based material by using the trimmer, wherein the rotating speed of the processed workpiece is 0-5000 rpm, and the polishing time is 20-300 min.
9. The use according to claim 7 or 8, further comprising inspecting the roughness of the silicon-based material and, if the roughness of the silicon-based material does not meet the interferometric requirements, subjecting the surface of the silicon-based material to a further polishing operation using the dresser.
10. Use according to any one of claims 7 to 9, further comprising, after said polishing, removing impurities from said work piece.
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