CN115591399A

CN115591399A - Interface reaction filtering device, semiconductor gas sensor and preparation method

Info

Publication number: CN115591399A
Application number: CN202211372204.9A
Authority: CN
Inventors: 商文霞; 龚涵运
Original assignee: Hunan Yuanxin Sensor Technology Co ltd
Current assignee: Hunan Yuanxin Sensor Technology Co ltd
Priority date: 2022-11-03
Filing date: 2022-11-03
Publication date: 2023-01-13

Abstract

The application provides an interface reaction filtering device, a semiconductor gas sensor and a preparation method, wherein the device is made of a gas molecule filtering material in a porous form; the interface reaction filtering device is used for being connected with a semiconductor sensitive layer and a measuring electrode in a semiconductor gas sensor for detecting target gas so as to adsorb and/or catalyze and reduce interference gas except the target gas and carry out interface reaction with the semiconductor gas sensor, and the type of the porous gas molecule filtering material is preset based on the type of the target gas. The interface reaction filtering device can accurately and pertinently filter gas molecules and effectively improve the application range of gas filtration; therefore, the application effectiveness and reliability of the semiconductor gas sensor for detecting toxic and harmful gases can be effectively improved, and the application universality of the semiconductor gas sensor can be improved.

Description

Interface reaction filtering device, semiconductor gas sensor and preparation method

Technical Field

The application relates to the technical field of semiconductors, in particular to an interface reaction filtering device, a semiconductor gas sensor and a preparation method.

Background

The semiconductor gas sensor has the advantages of high sensitivity, small volume, high stability, high integration level and the like, and is widely applied to the leakage detection of toxic, harmful, inflammable and explosive gases. Because the semiconductor sensitive material of the semiconductor gas sensor can respond to various active gases, the semiconductor gas sensor has poor selectivity to target gases and is easy to generate cross response under the actual use scene, so that the semiconductor gas sensor generates false alarm to further cause safety accidents. In order to improve the selectivity of the semiconductor gas sensor, a gas filter made of active substances is generally arranged at the front end of a semiconductor sensitive material. Therefore, interfering gas molecules in the actual working environment can be adsorbed by the gas filter before contacting with the semiconductor sensitive material, so that the selectivity of the semiconductor gas sensor is improved.

At present, a gas filter used in the semiconductor gas sensor, for example, a filter using activated carbon particles and the like, can adsorb a plurality of active gases, such as carbon monoxide, hydrogen sulfide, ammonia gas and the like, so that it cannot be guaranteed that toxic and harmful gases to be detected can be detected by a semiconductor sensitive material in the semiconductor gas sensor, and further the application effectiveness of the semiconductor gas sensor for detecting carbon monoxide, hydrogen sulfide, ammonia gas and the like can be affected, so that the application range of the current gas filter is relatively limited, and the gas filter can only be applied to a few gas types of semiconductor gas sensors, such as hydrogen sensors and methane sensors.

Therefore, it is desirable to design a gas filtering device that can improve the applicability of the semiconductor gas sensor and ensure the effectiveness of the application.

Disclosure of Invention

In view of the above, embodiments of the present application provide an interfacial reaction filtering apparatus, a semiconductor gas sensor and a method for manufacturing the same, which obviate or mitigate one or more of the disadvantages of the related art.

One aspect of the present application provides an interfacial reaction filter device, which is made of a gas molecular filtering material in a porous form;

the interface reaction filtering device is used for being connected with a semiconductor sensitive layer and a measuring electrode in a semiconductor gas sensor for detecting target gas so as to adsorb and/or catalyze, reduce and remove interference gas except the target gas and carry out interface reaction with the semiconductor gas sensor;

wherein the type of the porous form of the gas molecular filter material is pre-set based on the type of the target gas.

In some embodiments of the present application, the porous form of the gas molecular filtration material comprises: at least one of porous alumina, porous silica, porous silicon nitride, porous aluminum nitride, and porous polymer.

In some embodiments of the present application, comprising: a gas reaction filter layer;

one end of the gas reaction filtering layer is connected with the semiconductor sensitive layer and the measuring electrode; the other end of the gas reaction filtering layer is used for being in contact with the outside of the semiconductor gas sensor.

In some embodiments of the present application, the measuring electrode is deposited on one end of the gas reaction filtering layer based on a preset deposition manner and covered by the semiconductor sensitive layer, so that the gas reaction filtering layer serves as a substrate of the semiconductor sensitive layer and performs an interfacial reaction with the semiconductor sensitive layer.

In some embodiments of the present application, the depositing comprises: screen printing, film evaporation, magnetron sputtering or ink-jet printing.

Another aspect of the present application provides an interface reaction filtering type semiconductor gas sensor, including: the interface reaction filter device comprises a first insulating medium layer, a semiconductor sensitive layer and the interface reaction filter device which are sequentially stacked, wherein the interface reaction filter device comprises: a gas reaction filter layer;

a measuring electrode is arranged in the semiconductor sensitive layer and is connected with the gas reaction filtering layer;

the first insulating medium layer covers one end, far away from the gas reaction filtering layer, of the semiconductor sensitive layer and covers the side wall of the semiconductor sensitive layer so as to prevent gas molecules from contacting the semiconductor sensitive layer from other positions except the gas reaction filtering layer.

In some embodiments of the present application, the interface reaction filtering type semiconductor gas sensor further comprises: the thick film heating layer and a second insulating medium layer are used for electrically protecting the thick film heating layer;

the second insulating medium layer and the thick film heating layer are sequentially arranged at one end, far away from the semiconductor sensitive layer, of the first insulating medium layer in a stacking mode;

the thick film heating layer is used for heating the semiconductor sensitive layer and the gas reaction filtering layer.

In some embodiments of the present application, a heating electrode is deposited on an end of the first insulating dielectric layer remote from the semiconductor sensitive layer and covered by the thick film heating layer.

Yet another aspect of the present application also provides a method for manufacturing an interfacial reaction filtering type semiconductor gas sensor, including:

depositing a measuring electrode on the gas reaction filter layer;

depositing the semiconductor sensitive layer on the gas reaction filter layer and the measurement electrode;

and forming the first insulating medium layer on the semiconductor sensitive layer.

In some embodiments of the present application, further comprising:

depositing a heating electrode on the first insulating medium layer;

depositing a thick film heating layer on the first insulating medium layer and the heating electrode;

and forming a second insulating dielectric layer on the thick film heating layer.

According to the interface reaction filtering device, the porous gas molecule filtering material is adopted, so that gas molecules can be accurately and pertinently filtered, and the application range of gas filtering can be effectively enlarged; the interface reaction filtering device is applied to the semiconductor gas sensor, so that the effectiveness and the accuracy of detecting toxic and harmful gases by the semiconductor gas sensor can be effectively improved, the application range of the semiconductor gas sensor can be effectively improved, the semiconductor gas sensor applying the interface reaction filtering device can be applied to other gas detection except for hydrogen and methane detection, such as carbon monoxide, hydrogen sulfide, ammonia and the like, and the application effectiveness and the universality of the semiconductor gas sensor can be further improved.

Additional advantages, objects, and features of the application will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.

It will be appreciated by those skilled in the art that the objects and advantages that can be achieved with the present application are not limited to the specific details set forth above, and that these and other objects that can be achieved with the present application will be more clearly understood from the detailed description that follows.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application, are incorporated in and constitute a part of this application, and are not intended to limit the application. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the application. For purposes of illustrating and describing certain portions of the present application, the drawings may have been enlarged, i.e., may be larger, relative to other features of the exemplary devices actually made in accordance with the present application. In the drawings:

fig. 1 is a schematic structural diagram of an interfacial reaction filtering apparatus according to an embodiment of the present disclosure.

Fig. 2 is a schematic structural relationship diagram of a gas reaction filtering layer, a semiconductor sensitive layer and a measuring electrode in an interfacial reaction filtering apparatus according to an embodiment of the present application.

Fig. 3 is a schematic flow chart of an interfacial reaction filtering type semiconductor gas sensor according to another embodiment of the present application.

Fig. 4 is another schematic flow diagram of an interface reaction filtering type semiconductor gas sensor according to another embodiment of the present application.

Fig. 5 is a schematic flow chart illustrating a method for manufacturing an interfacial reaction filtering type semiconductor gas sensor according to still another embodiment of the present application.

Fig. 6 is a schematic flow chart illustrating a method for manufacturing an interfacial reaction filtering type semiconductor gas sensor according to still another embodiment of the present application.

Reference numerals:

1. an interfacial reaction filtration device;

2. a semiconductor gas sensor for detecting a target gas;

100. an interface reaction filter type semiconductor gas sensor;

101. a gas reaction filter layer;

102. a semiconductor sensitive layer;

103. a first insulating dielectric layer;

104. a thick film heating layer;

105. a second insulating medium layer;

106. a measuring electrode;

107. the electrodes are heated.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings. The exemplary embodiments and descriptions of the present application are provided to explain the present application and not to limit the present application.

Here, it should be further noted that, in order to avoid obscuring the present application with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present application are shown in the drawings, and other details not so relevant to the present application are omitted.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.

It is also noted that, unless otherwise specified, the term "coupled" is used herein to refer not only to a direct connection, but also to an indirect connection with an intermediate.

Hereinafter, embodiments of the present application will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same or similar components, or the same or similar steps.

In one or more embodiments of the present application, the gas sensor refers to: electronic components of gaseous kind and concentration information in the operational environment of perception.

In one or more embodiments of the present application, the semiconductor gas sensor refers to: a sensing device which takes a semiconductor material as a core and takes an output signal of the device as an electrical parameter belongs to a gas sensor.

In one or more embodiments of the present application, a filter or gas filter refers to: belongs to a component of the gas sensor, and adsorbs or degrades ineffective or possible interference gas so as to eliminate interference signals.

In one or more embodiments of the present application, the interfacial reaction refers to: the location where the chemical reaction of the gas takes place is limited to the interface of two different materials, referred to in this application as the interface of the gas reaction filter layer with the semiconductor sensitive layer.

In one or more embodiments of the present application, selectivity refers to: the ability of the sensor to recognize a single target in the presence of multiple targets.

In one or more embodiments of the present application, the micro-nano process refers to: based on the semiconductor material and device manufacturing technology which is mainly based on the modern silicon process, if basic process flows such as photoetching, film coating, etching and the like.

In order to improve the application range of the semiconductor gas sensor and ensure the application effectiveness of the semiconductor gas sensor, the application respectively provides an interface reaction filtering device, an interface reaction filtering type semiconductor gas sensor comprising the interface reaction filtering device and an embodiment of a preparation method of the interface reaction filtering type semiconductor gas sensor, so that gas molecules are accurately and pertinently filtered, and the application range of gas filtration can be effectively improved; therefore, the application effectiveness and reliability of the semiconductor gas sensor for detecting toxic and harmful gases can be effectively improved, and the application universality of the semiconductor gas sensor can be effectively improved.

The details are explained by the following examples.

An embodiment of the present application provides an interfacial reaction filtering apparatus, referring to fig. 1, which specifically includes the following contents:

the interface reaction filtering device 1 is made of a porous gas molecule filtering material;

the interface reaction filtering device 1 is used for being connected with a semiconductor sensitive layer 102 and a measuring electrode 106 in a semiconductor gas sensor 2 for detecting target gas, so as to adsorb and/or catalyze and remove interference gas except the target gas, and carry out interface reaction with the semiconductor gas sensor;

The filter of the conventional semiconductor gas sensor can only filter based on a gas adsorption mechanism, and the working substance is an active filtering substance and can adsorb a large amount of active gas. So that the filter is only suitable for gas with weaker activity, such as hydrogen, methane or oxygen, and the application range is narrow. The reaction of the porous structure that this application embodiment adopted filters, can adopt the catalysis mechanism to realize that selective catalysis will disturb gaseous catalytic degradation to be applicable to more various gases, have wider application.

That is, the interface reaction type filtering principle adopted in the embodiment of the present application does not rely on adsorption of gas alone, and meanwhile, the gas molecule filtering material in porous form can consume the interfering gas through catalytic reaction before reaching the semiconductor sensitive layer 102, so that different kinds of interfering gas can be specifically eliminated by selecting a proper active catalyst.

Furthermore, the interface reaction filtering has the functions of adsorption and catalytic degradation on the interference gas, so that the filtering effect on the gas is more obvious, and the selectivity of the semiconductor gas sensor can be obviously improved.

Traditional filter structure only adopts active material's adsorption to realize gas selectivity sensing process, and the interface type filtration that this application provided still can realize degrading the catalysis to interfering gas simultaneously outside adsorption, consequently has better filter effect, consequently makes interface reactivity semiconductor gas sensor have better selectivity, has better SNR at complicated annular, and the sensor precision is showing and is improving.

In one or more embodiments of the present application, the target gas refers to a gas used for detection by a semiconductor gas sensor, and may be a toxic and harmful gas, for example, the target gas may include: hydrogen, methane, carbon monoxide, hydrogen sulfide, ammonia, or the like.

Correspondingly, in one or more embodiments of the present application, the type of the porous gas molecular filter material used in the interfacial reaction filter device 1 may be manually configured according to the type of the target gas, for example, if the target gas is carbon monoxide, the porous gas molecular filter material capable of adsorbing or catalytically degrading carbon monoxide may be selected, and is specifically described in detail in the following embodiments.

In addition, in one or more embodiments of the present application, the catalytic degradation refers to that the gas molecular filter material in a porous form is catalyzed to react with other gases (also referred to as interfering gases) except for the target gas, and the interfering gases are degraded and the like to eliminate the interfering gases, so as to improve the gas sensitivity selectivity of the semiconductor gas sensor.

It will be appreciated that the means of catalysing the porous form of the gas molecular filter material may be by external catalytic means, such as external heating or the like; internal catalysis may also be employed, as described in detail in the examples that follow.

As can be seen from the above description, the interface reaction filtering apparatus provided in the embodiments of the present application, by using the gas molecule filtering material in a porous form, can accurately and specifically filter the interfering gas, and can effectively improve the applicable range of gas filtering; the interface reaction filtering device is applied to the semiconductor gas sensor, so that the effectiveness and the accuracy of detecting toxic and harmful gases by the semiconductor gas sensor can be effectively improved, the application range of the semiconductor gas sensor can be effectively improved, the semiconductor gas sensor applying the interface reaction filtering device can be applied to other gas detection except for hydrogen and methane detection, such as carbon monoxide, hydrogen sulfide, ammonia and the like, and the application effectiveness and the universality of the semiconductor gas sensor can be further improved.

In order to further improve the reliability and effectiveness of filtering the interfering gas by using the gas molecular filtering material with porous form, in the interface reaction filtering device provided by the embodiment of the present application, the gas molecular filtering material with porous form in the interface reaction filtering device at least includes: at least one of porous alumina, porous silica, porous silicon nitride, porous aluminum nitride, and porous polymer.

It will be appreciated that in selecting the porous form of the gas molecular filter material, care needs to be taken to satisfy the following conditions:

(1) The selected material has a porous form, and gas molecules can diffuse in the material to contact with the semiconductor sensitive layer 102 to generate a gas-sensitive response, and the material also serves as a substrate of the semiconductor sensitive layer 102.

(2) The above materials are selected so that the interfacial reaction filter device has an adsorption capacity for gas molecules or a reaction conversion capacity for gas molecules, or both.

For example, porous alumina is preferred as the material of the interfacial reaction filtration device because it has the advantages of low cost and good thermal stability, and in addition to porous alumina as the interfacial reaction filtration device, porous silica, porous silicon nitride, porous aluminum nitride, porous polymers, or the like, or any combination of the above porous substances or chemical and physical modification of the porous substances may be used.

Based on this, specific examples in which the type of the gas molecular filter material in the porous form is preset based on the type of the target gas include: if the target gas is methane, the porous gas molecular filtering material can be at least one of porous alumina, porous aluminum nitride and porous silicon oxide.

If the target gas is hydrogen, namely hydrogen detection is performed, the porous gas molecular filtering material can be a molecular sieve or silica gel;

if the target gas is carbon monoxide, the porous gas molecular filtering material can be porous alumina, silicon oxide and other catalysts with palladium added inside the pore diameter;

if the target gas is hydrogen sulfide, the porous gas molecular filtering material can be porous silicon oxide or porous sulfide;

if the target gas is ammonia gas, the porous gas molecular filtering material can be a porous polymer or porous ceramic or porous silica with catalysts such as palladium, silver and the like added therein.

As can be seen from the above description, the interface reaction filtering apparatus provided in the embodiments of the present application can further improve the accuracy and effectiveness of filtering the interfering gas by the preferred arrangement of the gas molecular filtering material in a porous form, and can further improve the application effectiveness and the universality of the semiconductor gas sensor.

In addition, it is considered that the existing filter contains adsorbing substances such as activated carbon particles, and the performance of the filter is directly related to the quality of the filtered matter. Thus making semiconductor gas sensors equipped with existing filters bulky, disadvantageous device miniaturization and device integration.

Based on this, in order to effectively reduce the volume of the interface reaction filtering apparatus, and thus reduce the volume of the semiconductor gas sensor, in an interface reaction filtering apparatus provided in an embodiment of the present application, referring to fig. 2, a specific structure of the interface reaction filtering apparatus is: a gas reaction filter layer 101;

one end of the gas reaction filtering layer 101 is connected with the semiconductor sensitive layer 102 and the measuring electrode 106; the other end of the gas reaction filter layer 101 is used for contact with the outside of the semiconductor gas sensor.

It can be understood that, because the gas reaction filter layer 101 of the layer structure may tend to a planar structure, the volume of the interface reaction filter device can be effectively reduced, and the volume of the conventional semiconductor gas sensor can be significantly reduced, so that the semiconductor gas sensor has the advantages of small volume and improved integration level.

Considering that the existing adsorption filter has a complex manufacturing process and is not suitable for micro-nano processing means of semiconductor materials and devices, the low-cost mass production cannot be carried out. The cost of a semiconductor gas sensor equipped with a filter can be significantly higher than a gas sensing device without a filter.

Based on this, in order to effectively reduce the production cost of the semiconductor gas sensor, reduce the process complexity, improve the production efficiency, and facilitate mass production, in the interfacial reaction filtering apparatus provided in the embodiment of the present application, the measuring electrode 106 is deposited on one end of the gas reaction filtering layer 101 and covered by the semiconductor sensitive layer 102 based on a preset deposition manner, so that the gas reaction filtering layer 101 serves as a substrate of the semiconductor sensitive layer 102 and performs an interfacial reaction with the semiconductor sensitive layer 102.

It will be appreciated that conventional filter constructions employ a three-dimensional packing of adsorbent material and that the filter can only be manufactured in a discrete process. The filter is costly, which results in a high cost of the gas sensor. According to the interface filtering principle provided by the embodiment of the application, the filtering structure is planar, the filtering structure can be manufactured in batches by adopting a printing or micro-nano process, and the filter and the semiconductor sensitive layer are integrally manufactured, so that the cost of the semiconductor gas sensor is obviously reduced.

In order to further improve the production efficiency of the semiconductor gas sensor and facilitate mass production, in an interfacial reaction filtering apparatus provided in an embodiment of the present application, the deposition manner at least includes: screen printing, film evaporation, magnetron sputtering or ink jet printing, etc.

That is, the deposition method of the measuring electrode 106 is generally realized by a screen printing technique, but may also be realized by a thin film evaporation, a magnetron sputtering, or an ink-jet printing. The deposition of electrodes on porous substrates to fabricate semiconductor gas sensors is one of the innovative improvements of the present application.

Based on the above-mentioned embodiment of the interface reaction filtering apparatus, the present application further provides an interface reaction filtering type semiconductor gas sensor, and referring to fig. 3, the interface reaction filtering type semiconductor gas sensor 100 specifically includes the following contents:

the first insulating medium layer 103, the semiconductor sensitive layer 102 and the interface reaction filtering device 1 mentioned in the foregoing embodiments are sequentially stacked, and the interface reaction filtering device 1 includes: a gas reaction filter layer 101;

a measuring electrode 106 is arranged in the semiconductor sensitive layer 102, and the measuring electrode 106 is connected with the gas reaction filtering layer 101;

the first insulating medium layer 103 covers one end of the semiconductor sensitive layer 102 far away from the gas reaction filtering layer 101 and covers the side wall of the semiconductor sensitive layer 102 to prevent gas molecules from contacting the semiconductor sensitive layer 102 from other positions except the gas reaction filtering layer 101.

Specifically, the gas reaction filter layer 101 serves as a support for the substrate of the semiconductor sensitive layer 102 first; on the other hand, the gas reaction filter layer 101 is a position where the interfering gas generates chemical reaction, so that the purpose of eliminating the interfering gas is achieved, and the gas sensitivity selectivity of the semiconductor gas sensor is improved.

The semiconductor sensitive layer 102 has a film structure made of semiconductor material, and functionally, it can interact with gas molecules to generate electrical output, such as resistance, work function, capacitance, inductance change, and the like. The semiconductor sensitive layer 102 is in direct contact with the gas reaction filter layer 101 in this application.

The first insulating medium layer is structurally a thick film made of an insulating material, is positioned on the semiconductor sensitive layer 102, and completely wraps the side wall of the semiconductor sensitive layer 102; functionally, it prevents gas molecules from contacting the sensitive semiconductor layer 102 from above, and allows only gas to pass through the gas reaction filter layer 101 and then contact the sensitive semiconductor layer 102 to respond. While achieving electrical isolation of the semiconductor sensitive layer 102 from other layers, such as the thick film heating layer 104 mentioned in the embodiments described below.

The measuring electrode 106 is structurally composed of a metallic conductive layer and is functionally used for collecting electrical signals of the semiconductor sensitive layer 102. Specific electrical signals may be resistance, current, voltage, capacitance, and work function and their combined outputs. The number and position of the measuring electrodes 106 can be set according to the requirements of the actual application. The measuring electrode 106 is disposed on one side of the semiconductor sensitive layer 102, and a plurality of measuring electrodes 106 are disposed at intervals along one side of the semiconductor sensitive layer 102.

As can be seen from the above description, the interface reaction filtering device provided in the embodiment of the present application can effectively improve the effectiveness and accuracy of detecting toxic and harmful gases by using the interface reaction filtering device in the semiconductor gas sensor, and can effectively improve the application range of the semiconductor gas sensor, so that the semiconductor gas sensor using the interface reaction filtering device can also be applied to other gas detection besides hydrogen and methane detection, such as carbon monoxide, hydrogen sulfide, ammonia, and the like, and further can improve the effectiveness and the universality of the application of the semiconductor gas sensor.

In order to further improve the application convenience and detection effectiveness of the interface reaction filtering type semiconductor gas sensor, referring to fig. 4, in an interface reaction filtering type semiconductor gas sensor provided in the embodiment of the present application, the interface reaction filtering type semiconductor gas sensor 100 further includes the following contents:

a thick film heating layer 104 and a second insulating dielectric layer 105 for electrically protecting the thick film heating layer 104;

the second insulating medium layer 105 and the thick film heating layer 104 are sequentially stacked at one end, far away from the semiconductor sensitive layer 102, of the first insulating medium layer 103;

the thick film heating layer 104 is used to heat the semiconductor sensitive layer 102 and the gas reaction filtration layer 101.

Specifically, the thick film heating layer 104 is structurally a thick film having a heating resistance, and functionally it can heat the semiconductor sensitive layer 102 and the gas reaction filtering layer 101, thereby promoting the activity of the gas molecules with the semiconductor sensitive layer 102 and the gas reaction filtering layer 101. The thick film heating layer 104 is provided at the penultimate layer of the entire semiconductor gas sensor, and the thick film heating layer 104 includes a thick film resistor and is provided thereon with heating electrodes 107, the heating electrodes 107 being provided at intervals along one side of the thick film heating layer 104.

The second insulating medium layer 105 is identical to the first insulating medium layer 103 in structure, and is used for electrically protecting the thick film heating layer 104 in function, and effectively preventing the heat of the thick film heating layer 104 of the thick film heater from dissipating so as to achieve the purpose of reducing power consumption.

The heater electrode 107 is structurally comprised of a metallic conductive layer and is functionally used to provide current to the thick film heater layer 104. The number and position settings of the measuring electrodes 106 do not differ significantly in function.

In order to further improve the application reliability of the interface reaction filtering type semiconductor gas sensor, in the interface reaction filtering type semiconductor gas sensor provided by the embodiment of the application, a heating electrode 107 is deposited on one end of the first insulating medium layer 103 far away from the semiconductor sensitive layer 102 and is covered by the thick film heating layer 104.

Wherein, the heating electrode 107 may be gold, platinum, silver, polysilicon or copper or any combination thereof. The deposition method of the heating electrode 107 may be screen printing, magnetron sputtering, or thermal evaporation, or any combination thereof. The common feature of the above-mentioned heater electrode 107 materials is that they have high electrical conductivity and stable chemical and physical properties at high temperatures.

In order to further improve and reduce the production cost of the semiconductor gas sensor, reduce the process complexity, improve the production efficiency and facilitate mass production, the present application further provides a method for manufacturing the interface reaction filtering type semiconductor gas sensor, which is shown in fig. 5, and the method for manufacturing the interface reaction filtering type semiconductor gas sensor specifically includes the following contents:

step 10: and depositing a measuring electrode on the gas reaction filtering layer.

For example, porous alumina is preferred as the material of the gas reaction filter layer 101, and a gold thin film is deposited by screen printing as the measuring electrode 106. The gold film can keep high conductivity and chemical inertness under high temperature and atmosphere conditions, so that the output of the sensor is stable.

In step 10, the measuring electrode 106 is deposited on the gas reaction filter layer 101 by thin film evaporation, magnetron sputtering or ink jet printing, and platinum, gold or silver may be used as the electrode material. The material selectivity, the arrangement position and the number of the measuring electrodes 106 can be flexibly arranged according to the requirements of practical application.

The use of porous insulating material such as porous alumina (or other materials) as the gas reaction filtering layer 101 and as the substrate for the measuring electrode 106 and the semiconductor sensitive layer 102 is not easy for those skilled in the art to think or implement, and is original. The use of the porous insulating material in the scheme overcomes the defects of large volume and small application range of passive adsorption principle of the traditional separation filter.

This application adopts porous alumina gas reaction filter layer 101 to design planar structure's filter, therefore small, with low costs, the filter based on reaction catalysis and physical adsorption simultaneous action has wider application range.

Step 20: depositing the semiconductor sensitive layer on the gas reaction filtering layer and the measuring electrode.

The semiconductor sensitive layer 102 is typically an oxide semiconductor, a compound semiconductor, an elementary semiconductor, or a combination of the above different types of semiconductors. A common feature of the above semiconductor materials is their sensitive nature to gases. The deposition scheme of the semiconductor sensitive layer 102 includes screen printing, vapor deposition, magnetron sputtering, spin coating or other process methods.

For example, a metal oxide semiconductor thin film may be deposited as the semiconductor sensitive layer 102 on the gas reaction filtering layer 101 by a screen process. Besides the metal oxide semiconductor selected in this case as the semiconductor sensitive layer 102, sensitive materials including molybdenum sulfide, palladium-silver alloy, palladium-hydrogen, etc. can be used, which have the common characteristic of strong sensitivity to gas.

And step 30: and forming the first insulating medium layer on the semiconductor sensitive layer.

In step 30, the material of the first insulating dielectric layer 103 may be silicon oxide, silicon nitride, aluminum oxide, boron nitride, or titanium nitride, or any combination thereof. The first insulating medium may be formed by screen printing, spin coating, chemical vapor deposition, magnetron sputtering, or any combination thereof. The common feature of the above insulating dielectric materials is that they have no gas-sensitive property and have stable insulating properties at high temperatures. Preferably, the first insulating dielectric layer 103 is formed by spin coating on the semiconductor sensitive layer 102, and has a thickness of not less than 100 nm. The silicon oxide insulating medium layer has the advantages of low cost and low process temperature, and the thicker insulating medium can prevent gas molecules from directly contacting the semiconductor sensitive layer 102. In this case, materials such as silicon nitride, aluminum oxide and boron nitride can be used outside the silicon oxide insulating medium layer, and the forming scheme can use screen printing, chemical vapor deposition or magnetron sputtering process. The common feature of the above materials and process schemes is that they have good electrical insulation properties while preventing gas molecules from penetrating through the insulating dielectric layer and contacting the semiconductor sensitive layer 102. The material and the forming process scheme of the first insulating dielectric layer 103 are selected more. In the present example, the insulating dielectric material is formed on the semiconductor sensitive layer 102 to prevent the gas molecules from contacting the sensitive material, so as to improve the gas sensitivity selectivity of the semiconductor gas sensor.

In order to further improve and reduce the production cost of the semiconductor gas sensor, reduce the process complexity, improve the production efficiency and facilitate mass production, the present application further provides a method for manufacturing the interface reaction filtering type semiconductor gas sensor, which is shown in fig. 6, and the method for manufacturing the interface reaction filtering type semiconductor gas sensor further includes the following steps:

step 40: and depositing a heating electrode on the first insulating medium layer.

Wherein the heater electrode 107 may be gold, platinum, silver, polysilicon or copper or any combination thereof. The deposition method of the heating electrode 107 may be screen printing, magnetron sputtering, or thermal evaporation, or any combination thereof. The common features of the above materials for the heater electrode 107 are that they have high electrical conductivity, stable chemical and physical properties at high temperatures, and many kinds of materials are selected. Preferably, a screen printing process is adopted to deposit platinum metal on the first dielectric insulating medium layer to serve as the heating electrode 107. Platinum metal has high electrical conductivity and good chemical stability at high temperatures. In this case, besides platinum metal is used as the heating electrode 107, gold, silver or polysilicon can be used, magnetron sputtering, evaporation and other processes can be used for the deposition process, and the material, deposition process, position and number of the measuring electrode 106 can be selected in various ways without affecting the performance of the reaction filtering type semiconductor gas sensor in the application case.

Step 50: and depositing a thick film heating layer on the first insulating medium layer and the heating electrode.

Wherein the thick film heating layer 104 material may be one of tungsten, platinum, ruthenium oxide, polysilicon, gold, nichrome, or any combination thereof. A common feature of the thick film heating materials described above is that they have a high temperature coefficient, and the application of an electric current can generate a high temperature in the thick film, and the thick film material remains stable at the high temperature. The selection of materials is wide. Preferably, the resistive ruthenium oxide film is deposited as the thick film heating layer 104 on the first dielectric insulating dielectric layer and the heating electrode 107 by a screen printing process. The ruthenium oxide resistance film has good chemical stability at high temperature and low cost. In this case, besides the ruthenium oxide resistive film deposited by screen printing as the thick film heating layer 104, one or any combination of spin coating and magnetron sputtering can be adopted.

Step 60: and forming a second insulating medium layer on the thick film heating layer.

Wherein the second insulating dielectric layer 105 material can be silicon oxide, silicon nitride, aluminum oxide, boron nitride or titanium nitride or any combination thereof. The second insulating medium may be formed by screen printing, spin coating, chemical vapor deposition, magnetron sputtering, or any combination thereof. The common characteristics of the insulating dielectric materials are that the insulating dielectric materials have no sensitive characteristic to gas, have stable insulating characteristic at high temperature and have more selection types. Preferably, the present scheme uses a screen printing process to form silicon nitride as the second insulating dielectric layer 105 on the thick film heating layer 104. The silicon nitride insulating medium layer has the advantages of low cost and high stability, and has good insulating property.

As can be seen from the above description, the method for manufacturing an interfacial reaction filtering type semiconductor gas sensor according to the embodiments of the present application does not rely solely on gas adsorption, but consumes the interfering gas through a catalytic reaction before reaching the semiconductor sensitive layer by the gas reaction filtering layer, and can specifically eliminate different kinds of interfering gases by selecting a suitable active catalyst. Therefore, the interface reaction filtering type gas sensor provided by the embodiment has wider application scenes. The interface reaction type filtering structure is prepared by adopting a plane printing process, and meanwhile, the gas reaction filtering layer is also used as a substrate of a semiconductor sensitive material. Therefore, the interface reaction filtering type semiconductor gas sensor has the advantages of small volume and high integration level. The interface reaction type filtering structure adopts a plane structure and can be manufactured in batches by adopting a micro-nano process, so that the cost of the device is obviously reduced.

In order to further illustrate the present invention, the present application further provides a specific application example of the above interfacial reaction filtering type semiconductor gas sensor, which is exemplified by that the above target gas is methane, that is, the above interfacial reaction filtering type semiconductor gas sensor is used for detecting methane gas, in the interfacial reaction filtering type methane gas sensor, the semiconductor sensitive layer 102 is a semiconductor type thin film material, the material type of the semiconductor type thin film material includes but is not limited to metal oxide semiconductor and compound semiconductor, and the thin film deposition manner includes but is not limited to screen printing, evaporation, sputtering and chemical vapor deposition.

The measuring electrode 106 may have a rectangular shape, a cylindrical shape, or a regular prism shape, and those skilled in the art can select/adjust the shape of the measuring electrode 106 according to the teachings of the present application, and all of them fall within the scope of the present application. The metal material composition of the measuring electrode 106 and the heating electrode 107 includes, but is not limited to, one of platinum, gold, silver, or any combination thereof. Preferably, gold is used as the measuring electrode 106 material.

The gas reaction filtering layer 101 serves to suppress contact of the non-methane reactive gas with the semiconductor sensitive layer 102.

The material composition of the first insulating dielectric layer 103 and the second insulating dielectric layer 105 includes, but is not limited to, one of hafnium oxide, aluminum oxide, silicon oxide, scandium oxide, titanium oxide, aluminum nitride, silicon nitride, boron nitride, carbon nitride, or any combination thereof. The selection/adjustment of the material composition of the first insulating gate dielectric layer by those skilled in the art in light of the technical solution of the present application falls within the protection scope of the present application. The material composition of the second insulating medium layer 105 and the first insulating medium layer 103 is preferably silicon oxide or low-k dielectric. The thickness of the first insulating dielectric layer 103 is greater than or equal to 100 nanometers.

For the interface reaction type semiconductor methane gas sensor of the present application, the material composition of the heating resistor of the thick film heating layer 104 includes, but is not limited to, one of tungsten, platinum, ruthenium oxide, polysilicon, gold, nichrome, platinum, or any combination thereof.

It is to be understood that the present application is not limited to the particular arrangements and instrumentality described above and shown in the attached drawings. A detailed description of known methods is omitted herein for the sake of brevity. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present application are not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps, after comprehending the spirit of the present application.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the embodiment of the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An interface reaction filtering device is characterized in that the interface reaction filtering device is made of a gas molecule filtering material in a porous form;

the interface reaction filtering device is used for being connected with a semiconductor sensitive layer and a measuring electrode in a semiconductor gas sensor for detecting target gas so as to adsorb and/or catalyze and remove interference gas except the target gas and carry out interface reaction with the semiconductor gas sensor;

2. The interfacial reaction filtration device of claim 1, wherein the porous morphology gas molecular material comprises: at least one of porous alumina, porous silica, porous silicon nitride, porous aluminum nitride, and porous polymer.

3. The interfacial reaction filtration device of claim 1, comprising: a gas reaction filter layer;

one end of the gas reaction filtering layer is connected with the semiconductor sensitive layer and the measuring electrode; and the other end of the gas reaction filtering layer is used for being in contact with the outside of the semiconductor gas sensor.

4. The interface reaction filtering device of claim 3, wherein the measuring electrode is deposited on one end of the gas reaction filtering layer based on a preset deposition manner and covered by the semiconductor sensitive layer, so that the gas reaction filtering layer serves as a substrate of the semiconductor sensitive layer and performs an interface reaction with the semiconductor sensitive layer.

5. The interfacial reaction filtration device of claim 4, wherein said depositing comprises: screen printing, film evaporation, magnetron sputtering or ink-jet printing.

6. An interface reaction filtering type semiconductor gas sensor, comprising: the interface reaction filtering device of any one of claims 1 to 5, wherein the first insulating medium layer, the semiconductor sensitive layer and the interface reaction filtering device are sequentially stacked, and the interface reaction filtering device comprises: a gas reaction filter layer;

7. The interface reaction filtering type semiconductor gas sensor according to claim 6, further comprising: the thick film heating layer and a second insulating medium layer are used for electrically protecting the thick film heating layer;

the second insulating medium layer and the thick film heating layer are sequentially stacked at one end, far away from the semiconductor sensitive layer, of the first insulating medium layer;

8. The interface reaction filtering type semiconductor gas sensor according to claim 7, wherein an end of the first insulating medium layer remote from the semiconductor sensitive layer is deposited with a heating electrode and covered by the thick film heating layer.

9. A method for producing the interface reaction filtering type semiconductor gas sensor according to any one of claims 6 to 8, comprising:

depositing a measuring electrode on the gas reaction filter layer;

10. The method for manufacturing an interfacial reaction filtration type semiconductor gas sensor according to claim 9, further comprising:

depositing a heating electrode on the first insulating medium layer;