CN115584483A - Tin dioxide film and preparation method and application thereof - Google Patents

Tin dioxide film and preparation method and application thereof Download PDF

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CN115584483A
CN115584483A CN202211164098.5A CN202211164098A CN115584483A CN 115584483 A CN115584483 A CN 115584483A CN 202211164098 A CN202211164098 A CN 202211164098A CN 115584483 A CN115584483 A CN 115584483A
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oxygen
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oxygen source
tin
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CN115584483B (en
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张富
丁蕾
何永才
何博
杨莹
刘童
张华�
李勃超
顾小兵
徐希翔
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Longi Green Energy Technology Co Ltd
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The application provides a preparation method of a tin dioxide film, which comprises the following steps: depositing a tin dioxide film on a substrate by atomic layer deposition techniques, wherein during the deposition process, a step is included of reacting with a tin metal organic source using a first oxygen source and a second oxygen source alternately as oxygen sources; the first oxygen source is selected from one or two of water and hydrogen peroxide, and the second oxygen source is selected from one or more of ozone, oxygen, nitric oxide, nitrogen dioxide, plasma activated ozone, plasma activated oxygen, plasma activated nitric oxide or plasma activated nitrogen dioxide. This application has changed the defect of original single oxygen source through the mode that adopts second oxygen source and first oxygen source alternating to provide the oxygen source, utilizes the stronger oxidability of second oxygen source to reduce the defect in the tin oxide crystal structure of preparing, obtains more perfect crystal structure, promotes film forming quality, finally promotes the fill factor and the electron transmission ability of device.

Description

Tin dioxide film and preparation method and application thereof
Technical Field
The application belongs to the technical field of solar cells, and particularly relates to a tin dioxide thin film and a preparation method and application thereof.
Background
The absorption range of the perovskite cell/silicon-based heterojunction two-end laminated cell for solar spectrum is increased, and the photoelectric conversion efficiency of more than 30 percent (more than 29.4 percent of the silicon cell limit efficiency) can be theoretically obtained. The highest efficiency which is currently approved is 29.8%, and the great potential of the perovskite/silicon laminated solar cell in the aspect of breaking through the limit efficiency of the silicon cell is further proved. And thus is considered to be a mainstream product of future high-efficiency solar cells. However, to realize a highly efficient and stable perovskite/silicon tandem solar cell, it is also very important to prepare a high-quality electron transport layer.
In perovskite/silicon two-terminal tandem solar cells, C60 and tin dioxide (SnO) 2 ) Together as an electron transport layer, in addition to which tin dioxide also acts as a buffer layer. In tandem cells, however, tin dioxide is typically prepared using Atomic Layer Deposition (ALD) techniques, which is a process in which a metal organic source and an oxygen source are pulsed alternately into a reaction chamber and a film is formed by a self-limiting reaction. Deionized water is generally adopted as a single oxygen source in the preparation process, and tetra (dimethylamino) tin (TDMASn) is adopted as a metal organic source of Sn, wherein Sn is +4 valence. When deionized water is used as an oxygen source, more defects are formed in a tin dioxide film in a tin oxide film forming process, electrons in a device are captured, the performance of the device is greatly lost, and particularly, the Filling Factor (FF) of the device is greatly influenced.
Disclosure of Invention
Aiming at the problems in the prior art, the application provides a tin dioxide electron transport layer and a preparation method thereof.
Specifically, the present application relates to the following:
a preparation method of a tin dioxide film comprises the following steps:
depositing a tin dioxide film on the substrate by an atomic layer deposition technique,
wherein during the deposition process, a step of reacting with the tin metal organic source using the first oxygen source and the second oxygen source alternately as the oxygen sources is included;
the first oxygen source is one or two of water and hydrogen peroxide,
the second oxygen source is one or more selected from ozone, oxygen, nitric oxide, nitrogen dioxide, plasma activated ozone, plasma activated oxygen, plasma activated nitric oxide, or plasma activated nitrogen dioxide.
Optionally, the first oxygen source is water and the second oxygen source is ozone.
Optionally, the tin metal organic source is selected from alkyl tin, tin alkoxide, sn (NR 1R 2) 4 Wherein R1 and R2 are independently selected from C1-C4 alkyl, preferably tetra (dimethylamino) tin.
Optionally, the step of using the first and second oxygen sources alternately as the oxygen source to react with the tin-metal organic source comprises a plurality of the following cycles:
introducing the tin metal organic source and purging with an inert gas, then introducing the first oxygen source or the second oxygen source and purging with an inert gas,
wherein the first oxygen source and the second oxygen source are used alternately between two adjacent cycles.
Optionally, wherein the step of using the first source of oxygen and the second source of oxygen alternately as sources of oxygen to react with the source of tin metal organic during the deposition further comprises a plurality of cycling steps of using only the first source of oxygen to react with the source of tin metal organic.
Optionally, the number of cycles is from 50 to 500.
Optionally, the inert gas is nitrogen.
Optionally, in the nitrogen purging step, the nitrogen purging time is 5-15s, and the nitrogen flow is 20-90sccm.
Optionally, the tin metal organic source is introduced by taking inert gas as carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-2s; the first oxygen source is introduced by taking inert gas as carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s; the second oxygen source is directly introduced, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s.
Optionally, the tin dioxide thin film has a thickness of 5 to 50nm, preferably 10 to 20nm.
Optionally, the substrate is one of C60, C70, PCBM.
A tin dioxide electron transport layer prepared by any one of the above preparation methods.
A tin dioxide buffer layer is prepared by any one of the preparation methods.
A perovskite solar cell comprising the above tin dioxide electron transport layer and/or tin dioxide buffer layer.
Optionally, the perovskite solar cell comprises a hole transport layer, a perovskite photoactive layer, an electrically insulating layer, a first electron transport layer and a second electron transport layer which are sequentially stacked, wherein the first electron transport layer is the tin dioxide electron transport layer.
Optionally, the second electron transport layer is one of C60, C70, PCBM.
Optionally, the perovskite solar cell is selected from one of an inorganic perovskite cell, an organic-inorganic hybrid perovskite cell.
A perovskite tandem solar cell comprises a crystalline silicon bottom cell, an intermediate composite layer and a perovskite top cell which are sequentially stacked, wherein the perovskite top cell is any perovskite solar cell.
Optionally, the crystalline silicon substrate battery is selected from one of a PERC battery, a topon battery, a HJT battery, an IBC battery, and an HBC battery.
This application has changed the defect of original single oxygen source through the mode that adopts second oxygen source to add first oxygen source alternating and provide the oxygen source, utilizes the stronger oxidability of second oxygen source to reduce the defect in the tin oxide crystal structure of preparing, obtains more perfect crystal structure, promotes the film forming quality, finally promotes the fill factor and the electron transmission ability of device.
Drawings
FIG. 1 is a schematic diagram of a perovskite/silicon two-terminal tandem solar cell;
FIG. 2 shows SnO under various oxygen source preparation conditions 2 Reflective properties of the film.
Detailed Description
The present application is further described below in conjunction with the following examples, which are included merely to further illustrate and explain the present application and are not intended to limit the present application.
Unless defined otherwise, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or experimental applications, the materials and methods are described below. In case of conflict, the present specification, including definitions, will control, and the materials, methods, and examples are illustrative only and not intended to be limiting. The present application is further described with reference to the following specific examples, which should not be construed as limiting the scope of the present application.
In this context, atomic Layer Deposition (ALD) is a method of forming a deposited film by alternately pulsing a vapor phase precursor into a reactor and chemisorbing and reacting on the deposited substrate, which is a method of plating a substrate surface with a substance in the form of a monoatomic film layer by layer. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one in such a way that only one layer of atoms is deposited per reaction. A conventional ALD apparatus may include a reactor chamber, a substrate holder, a gas flow system including gas inlets for providing precursors and reactants to the substrate surface, and an exhaust system for removing the gases used. The growth mechanism relies on adsorption of the precursors on active sites of the substrate and conditions are preferably maintained such that no more than a monolayer is formed on the substrate, thereby self-terminating the process. The exposure of the substrate to the first precursor is typically followed by a purge stage or other removal process (e.g., vacuuming or "pump down") in which any excess first precursor, as well as any reaction byproducts, are removed from the reaction chamber. A second reactant or precursor is then introduced into the reaction chamber, where it reacts with the first precursor, and this reaction produces the desired film on the substrate. The reaction is terminated when all available first precursor species adsorbed on the substrate have reacted with the second precursor. A second purge or other removal stage is then performed that removes any remaining second precursor and possible reaction byproducts in the reaction chamber. This cycle may be repeated to grow the film to a desired thickness.
One of the recognized advantages of ALD over other deposition processes is that it is self-saturating and uniform, as long as the temperature is within the ALD window (which is above the condensation temperature of the precursor and below the thermal decomposition temperature of the precursor) and provides a sufficient reactant dose in each pulse to saturate the surface. Thus, both the temperature and the gas supply may not need to be completely uniform to achieve uniform deposition.
As used herein, "substrate" may refer to any underlying material or materials that may be used, or upon which a device, circuit or film may be formed.
As used herein, "film" may refer to any continuous or discontinuous structure, material, or materials deposited by the methods disclosed herein. For example, a "film" may include a 2D material, nanorods, nanotubes, nanolaminates, or nanoparticles, or even a partial or complete molecular layer or a partial or complete atomic layer or cluster of atoms and/or molecules. A "film" may also comprise one or more materials or layers having pinholes, but still be at least partially continuous.
As used herein, "metal organic source" refers to an organic compound containing a metal, and tin metal organic source refers to an organic compound containing tin.
Herein, the "electron transport layer" refers to a layer through which electrons can easily flow and which generally reflects holes (holes are a lack of electrons which are mobile carriers considered as positive charges in semiconductors).
In this context, the "buffer layer" refers to a layer that serves as an interface adjustment layer, and may be located between the electron transport layer and the cathode or between the electron transport layer and the light absorption layer, so that on one hand, energy levels on the electron transport path may be more matched, electron extraction and transport may be accelerated, interface defect states may be passivated, and interface recombination currents may be reduced; on the other hand, the perovskite absorption layer can be protected, and the stability of the battery is further improved.
To solve the problems in the prior art, the application provides a tin dioxide (SnO) 2 ) A method for preparing a film comprising the steps of:
depositing a tin dioxide film on a substrate by an atomic layer deposition technology,
wherein during the deposition process, a step of reacting with the tin metal organic source using the first oxygen source and the second oxygen source alternately as oxygen sources is included.
Wherein the first oxygen source is selected from one or two of water and hydrogen peroxide. That is, the first oxygen source may be one or two, for example, water, hydrogen peroxide, or water and hydrogen peroxide may be used simultaneously or separately.
The second oxygen source is one or more selected from ozone, oxygen, nitric oxide, nitrogen dioxide, plasma activated ozone, plasma activated oxygen, plasma activated nitric oxide and plasma activated nitrogen dioxide. The second oxygen source may be one, two, three or more. The first oxygen source and the second oxygen source may be in any combination.
In a specific embodiment, the first oxygen source is water and the second oxygen source is ozone.
In a specific embodiment, the first oxygen source is hydrogen peroxide and the second oxygen source is ozone.
In a specific embodiment, the first oxygen source is water and the second oxygen source is oxygen.
The tin metal organic source is selected from alkyl tin, tin alkoxide, sn (NR 1R 2) 4 Wherein R1 and R2 are respectively and independently selected from C1-C4 alkyl.
In a specific embodiment, the tin metal organic source is Sn (NR 1R 2) 4 Wherein R1 and R2 are each independently selected from C1-C4 alkyl.
In a specific embodiment, the tin metal organic source is tetrakis (dimethylamino) tin (TDMASn).
In a specific embodiment, the first source of oxygen is water, the second source of oxygen is ozone, and the tin metal organic source is tetrakis (dimethylamino) tin (TDMASn).
The first oxygen source and the second oxygen source are alternately used as the oxygen source to react with the tin metal organic source, which means that the second oxygen source reacts with the tin metal organic source after the first oxygen source reacts with the tin metal organic source, or the first oxygen source reacts with the tin metal organic source after the second oxygen source reacts with the tin metal organic source.
Specifically, the step of using a first oxygen source and a second oxygen source alternately as the oxygen source to react with the tin-metal organic source comprises a plurality of the following cycles:
introducing the tin metal organic source and purging with an inert gas, then introducing the first oxygen source or the second oxygen source and purging with an inert gas,
wherein the first and second oxygen sources are used alternately between two adjacent cycles.
The alternating use of the first oxygen source and the second oxygen source between two adjacent cycles means that if the first oxygen source is used in the first cycle to react with the tin metal organic source, the second oxygen source is used in the second cycle to react with the tin metal organic source, and the first oxygen source is used in the third cycle to react with the tin metal organic source. In these cycles, the first oxygen source or the second oxygen source used in different cycles may be the same or different, as long as the first oxygen source and the second oxygen source are used alternately. For example, if the second oxygen source used in the second cycle is ozone, then a second oxygen source must be used in the fourth cycle, but the second oxygen source may use ozone, or any one or more other second oxygen sources may be used, e.g., oxygen may be used as the second oxygen source.
Further, the deposition process may further comprise a plurality of cycling steps of reacting with the tin metal organic source using only the first oxygen source prior to said step of reacting with the tin metal organic source using the first oxygen source and the second oxygen source alternately as oxygen sources. That is, multiple cycles of reacting the first oxygen source as a single oxygen source with the tin metal organic source may also be included prior to the step of using the first oxygen source and the second oxygen source alternately as oxygen sources to react with the tin metal organic source.
The number of cycles of the single oxygen source may be 50-500.
The inert gas may be any inert gas known in the art, such as nitrogen, argon, etc., as long as the purging function of the present application is achieved.
Parameters related to the purging of the inert gas, such as purge time, flow rate, etc., parameters related to the introduction of the tin metal organic source, such as introduction time, flow rate, etc., and parameters related to the introduction of the first oxygen source and the second oxygen source, such as introduction time, flow rate, etc., can be adjusted by one skilled in the art based on the operating methods known in the art according to actual needs.
In a specific embodiment, the inert gas is nitrogen.
In a specific embodiment, in the nitrogen purging step, the nitrogen purging time is 5 to 15s and the nitrogen flow rate is 20 to 90sccm.
In a specific embodiment, the tin metal organic source is introduced by taking inert gas as carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-2s; the first oxygen source is introduced by taking inert gas as carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s; the second oxygen source is directly introduced, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s.
In a particular embodiment, the method comprises the following steps:
step 1: a tin metal organic source, such as TDMASn, is introduced to the substrate.
And 2, step: and (5) purging with nitrogen.
And step 3: a first oxygen source, such as water, is introduced.
And 4, step 4: and (5) purging with nitrogen.
And 5: a second source of oxygen, such as ozone or oxygen, is introduced.
Step 6: and (6) purging with nitrogen.
After step 6 is completed, step 1 is performed to start a new cycle.
Wherein the number of cycles can be adjusted according to the thickness of the tin dioxide film to be deposited.
In a specific embodiment, the number of cycles is 50-500, and may be, for example, 50, 60, 70, 90, 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 210, 220, 230, 240, 250, 260, 270, 280, 290, 300, 310, 320, 330, 340, 350, 360, 370, 380, 390, 400, 410, 420, 430, 440, 450, 460, 470, 480, 490, 500.
In a specific embodiment, the thickness of the tin dioxide thin film is 5 to 50nm, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, 30nm, 31nm, 32nm, 33nm, 34nm, 35nm, 36nm, 37nm, 38nm, 39nm, 40nm, 41nm, 42nm, 43nm, 44nm, 45nm, 46nm, 47nm, 48nm, 49nm, 50nm, preferably 10 to 20nm.
In a specific embodiment, the substrate is one of C60, C70, PCBM.
The method adopts the first oxygen source and the second oxygen source to alternately provide the oxygen source, thereby overcoming the defect that the original single deionized water is used as the oxygen source, and promoting Sn formed in the ALD reaction process by utilizing the strong oxidability of the second oxygen source 2+ Conversion to Sn 4+ To reduce the crystal structure of the prepared tin oxideThe crystal structure is more perfect, the film forming quality is improved, and the FF of the device is finally improved.
The application also provides a tin dioxide electron transport layer or a tin dioxide buffer layer prepared by the method.
SnO prepared by adopting method of application 2 The film has lower reflection, i.e., the loss of light in the film is reduced. In addition, the thin film prepared in this way has higher mobility and lower resistivity, which further illustrates that the prepared SnO 2 The film has higher quality and good electron transport capability.
The present application also provides perovskite solar cells comprising the aforementioned tin dioxide electron transport layer or tin dioxide buffer layer, which encompasses any perovskite solar cell comprising a tin dioxide electron transport layer or a perovskite solar cell comprising a tin dioxide buffer layer.
In a specific embodiment, the perovskite solar cell comprises a hole transport layer, a perovskite photoactive layer, an electric insulation layer, a first electron transport layer and a second electron transport layer which are sequentially stacked, wherein the first electron transport layer is the tin dioxide electron transport layer.
The second electron transport layer is one of C60, C70 and PCBM, and C60 and tin dioxide can jointly serve as the electron transport layer from the viewpoint of excellent performance.
The perovskite solar cell can be one of an inorganic perovskite cell, an organic perovskite cell and an organic-inorganic hybrid perovskite cell.
The utility model provides a perovskite tandem solar cell, it is including the crystalline silicon end battery, middle composite bed and the perovskite top battery that stack gradually the setting, wherein perovskite top battery is any kind of foretell perovskite solar cell. The crystalline silicon bottom battery is selected from one of a PERC battery, a TOPCon battery, a HJT battery, an IBC battery and an HBC battery.
The intermediate composite layer may be one of a tunnel junction, IZO, ITO, AZO. The transparent electrode may be one of IZO, ITO, AZO.
In a specific embodiment, the perovskite tandem solar cell has a structure as shown in fig. 1, and comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer. The crystalline silicon bottom cell can be one of a PERC cell, a TOPCon cell, an HJT cell, an IBC cell and an HBC cell. The intermediate composite layer may be one of a tunnel junction, IZO, ITO, AZO. The transparent electrode may be one of IZO, ITO, AZO. The metal electrode may be one of Ag, au, cu. The antireflective layer may be MgF 2 、LiF、SiO 2 One kind of (1). The perovskite roof battery may be one of an inorganic perovskite battery, an organic perovskite battery, and an organic-inorganic hybrid perovskite battery.
Further, the perovskite roof cell includes a Hole Transport Layer (HTL), a perovskite photoactive layer (PVSK), an electrically insulating LiF layer, a C60 Electron Transport Layer (ETL), a tin dioxide electron transport layer, a transparent electrode layer, a metal electrode layer, an antireflective layer.
The HTL layer may be one of 2PACz, me-4PACz, meO-2PACz, and NiOx. The HTL layer can be prepared by adopting a spin coating method, and the thickness of the HTL layer is 10-30 nm.
The chemical formula of the perovskite photoactive layer is AB (X) n Y 1-n ) 3 Wherein A is typically CH 3 NH 3 、C 4 H 9 NH 3 、NH 2 ＝CHNH 2 Or monovalent cations such as Cs; b is usually a divalent metal ion such as Pb or Sn; x and Y are halogen anions such as Cl, br or I; n =1, 2, 3. The perovskite photoactive layer is prepared by preparing precursors of all elements according to a proportion, forming a film by adopting a spin coating method, and then heating and annealing, and the thickness of the perovskite photoactive layer is 1-3 mu m.
The LiF electric insulation layer can be prepared by thermal evaporation deposition, and the thickness is 1-5 nm.
The C60 electron transport layer can be prepared by thermal evaporation deposition, and the thickness is 15-20 nm.
Examples
Example 1
The structure of the laminated solar cell is shown in fig. 1, and the laminated solar cell comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer.
The preparation method of the laminated solar cell and the tin oxide layer comprises the following steps:
the crystalline silicon cell is a HJT cell;
depositing an ITO composite layer on the n surface of the HJT battery by adopting PVD;
spin-coating a hole transport layer precursor solution on the composite layer, and heating and annealing at 100 ℃ for 5min, wherein the layer material is MeO-2PACz, and the thickness of the film is about 20 nm;
spin-coating the hole transport layer to obtain a perovskite light-absorbing layer, specifically according to Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 Preparing a precursor solution according to a proportion, then spin-coating the precursor solution on a hole transport layer, and then annealing at 120 ℃ for 15min to obtain a perovskite thin film with the thickness of 1 mu m;
depositing a LiF charge insulating layer on the perovskite light absorption layer by thermal evaporation, wherein the thickness of the film is about 1 nm;
depositing a C60 electron transport layer on the LiF charge insulating layer by thermal evaporation, wherein the thickness of the film is about 15 nm;
preparing SnO on the C60 electron transport layer by adopting ALD technology 2 An electron transport layer and a buffer layer. The method comprises the following steps:
step 1: a tin metal organic source, TDMASn, is introduced to the substrate.
Step 2: and (5) purging with nitrogen.
And step 3: a first oxygen source, water, is introduced.
And 4, step 4: and (6) purging with nitrogen.
And 5: a tin metal organic source, TDMASn, was introduced.
And 6: and (5) purging with nitrogen.
And 7: a second source of oxygen, ozone, is introduced.
And 8: and (5) purging with nitrogen.
After step 8 is completed, step 1 is executed to start a new cycle.
The method comprises the following specific steps:
introducing a metal organic source into the reaction chamber by taking nitrogen as a carrier gas, wherein the introduction time is 0.1s, and the carrier gas flow is 50sccm; then, purging with pure nitrogen for 12s at the flow rate of 50sccm; then introducing oxygen for 0.1s, wherein the flow rate is 50sccm; then purging with pure nitrogen for 12s at a nitrogen flow of 50sccm; the metal organic source is TDMASn, the oxygen source is deionized water or ozone, when the oxygen source is the deionized water, the nitrogen is used as carrier gas and is introduced into the reaction cavity, and when the oxygen source is the ozone, the ozone gas is directly introduced without the carrier gas. The temperature of the chamber is set to be 90 ℃, and the SnO with the deposition thickness of about 15nm is deposited for 140 cycles 2 A film.
In said SnO 2 And ITO transparent electrodes are deposited on the electron transmission layer and the buffer layer by PVD, and the thickness of the ITO transparent electrodes is about 100 nm.
And depositing a metal Ag electrode on the transparent electrode by thermal evaporation, wherein the thickness of the metal Ag electrode is about 300 nm.
Adopting electron beam evaporation to deposit MgF on the metal electrode 2 The antireflective layer has a thickness of about 100 nm.
Example 2
The structure of the laminated solar cell is shown in fig. 1, and the laminated solar cell comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer.
The preparation method of the laminated solar cell and the tin oxide layer comprises the following steps:
the crystalline silicon cell is a HJT cell;
depositing an ITO composite layer on the n surface of the HJT battery by adopting PVD;
spin-coating a precursor solution of a hole transport layer on the composite layer, and heating and annealing at 100 ℃ for 5min, wherein the material of the layer is MeO-2PACz, and the thickness of the film is about 20 nm;
spin-coating the hole transport layer to obtain a perovskite light-absorbing layer, specifically according to Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 Ratio ofPreparing a precursor solution, then spin-coating the precursor solution on a hole transport layer, and then annealing at 120 ℃ for 15min to obtain a perovskite thin film with the thickness of 1 mu m;
depositing a LiF charge insulating layer on the perovskite light absorption layer by thermal evaporation, wherein the thickness of the film is about 1 nm;
depositing a C60 electron transport layer on the LiF charge insulating layer by thermal evaporation, wherein the thickness of the film is about 15 nm;
SnO prepared on the C60 electron transport layer by adopting ALD technology 2 An electron transport layer and a buffer layer. The method comprises the following steps:
step 1: a tin metal organic source, TDMASn, is introduced to the substrate.
Step 2: and (6) purging with nitrogen.
And step 3: a first oxygen source, water, is introduced.
And 4, step 4: and (6) purging with nitrogen.
After step 4 is completed, step 1 is performed to start a new cycle. After 80 cycles, step 5 is performed.
And 5: introducing a tin metal organic source, TDMASn.
And 6: and (5) purging with nitrogen.
And 7: a second oxygen source, ozone, is introduced.
And step 8: and (5) purging with nitrogen.
And step 9: a tin metal organic source, TDMASn, was introduced.
Step 10: and (5) purging with nitrogen.
Step 11: a first oxygen source, water, is introduced.
Step 12: and (6) purging with nitrogen.
After step 12 is completed, step 5 is executed to start a new cycle.
The method comprises the following specific steps:
introducing a metal organic source into the reaction chamber by using nitrogen as a carrier gas, wherein the introduction time is 0.1s, and the carrier gas flow is 50sccm; then, purging with pure nitrogen for 12s at the flow rate of 50sccm; then introducing oxygen for 0.1s, wherein the flow rate is 50sccm; then pure nitrogen is used for purging for 12s, and the nitrogen flow rateIs 50sccm; the metal organic source is TDMASn, the oxygen source is deionized water or ozone, when the oxygen source is the deionized water, the nitrogen is used as carrier gas and is introduced into the reaction cavity, and when the oxygen source is the ozone, the ozone gas is directly introduced without the carrier gas. The temperature of the chamber is set to be 90 ℃, and the SnO with the thickness of about 15nm is deposited for 60 cycles 2 A film.
In said SnO 2 And ITO transparent electrodes are deposited on the electron transmission layer and the buffer layer by adopting PVD, and the thickness is about 100 nm.
And depositing a metal Ag electrode on the transparent electrode by thermal evaporation, wherein the thickness of the metal Ag electrode is about 300 nm.
Adopting electron beam evaporation to deposit MgF on the metal electrode 2 The thickness of the antireflection layer is about 100 nm.
Example 3
The structure of the laminated solar cell is shown in fig. 1, and the laminated solar cell comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer.
The preparation method of the laminated solar cell and the tin oxide layer comprises the following steps:
the crystalline silicon cell is selected from an HJT cell;
depositing an ITO composite layer on the n surface of the HJT battery by adopting PVD;
spin-coating a hole transport layer precursor solution on the composite layer, and heating and annealing at 100 ℃ for 5min, wherein the layer material is MeO-2PACz, and the thickness of the film is about 20 nm;
spin coating perovskite light absorption layer on the hole transport layer, specifically according to Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 Preparing a precursor solution according to a proportion, then spin-coating the precursor solution on a hole transport layer, and then annealing at 120 ℃ for 15min to obtain a perovskite thin film with the thickness of 1 mu m;
depositing a LiF charge insulating layer on the perovskite light absorption layer by thermal evaporation, wherein the thickness of the film is about 1 nm;
depositing a C60 electron transport layer on the LiF charge insulating layer by thermal evaporation, wherein the thickness of the film is about 15 nm;
SnO prepared on the C60 electron transport layer by adopting ALD technology 2 An electron transport layer and a buffer layer. The method comprises the following steps:
step 1: a tin metal organic source, TDMASn, is introduced to the substrate.
Step 2: and (5) purging with nitrogen.
And step 3: a first source of oxygen, water, is introduced.
And 4, step 4: and (5) purging with nitrogen.
And 5: a tin metal organic source, TDMASn, was introduced.
And 6: and (5) purging with nitrogen.
And 7: a second source of oxygen, is introduced.
And 8: and (5) purging with nitrogen.
After step 8 is completed, step 1 is executed to start a new cycle.
The method comprises the following specific steps:
introducing a metal organic source into the reaction chamber by taking nitrogen as a carrier gas, wherein the introduction time is 0.1s, and the carrier gas flow is 50sccm; then purging with pure nitrogen for 12s at the nitrogen flow rate of 50sccm; then introducing oxygen for 0.1s, wherein the flow rate is 50sccm; purging with pure nitrogen for 12s at a flow rate of 50sccm; the metal organic source is TDMASn, the oxygen source is deionized water and oxygen, when the oxygen source is deionized water, nitrogen is used as carrier gas to be introduced into the reaction cavity, and when the oxygen source is oxygen, the carrier gas is not needed to be directly introduced into the oxygen gas. The temperature of the chamber is set to be 90 ℃, and the 140-cycle deposition thickness of SnO is about 15nm 2 A film.
In said SnO 2 And ITO transparent electrodes are deposited on the electron transmission layer and the buffer layer by adopting PVD, and the thickness is about 100 nm.
And depositing a metal Ag electrode on the transparent electrode by thermal evaporation, wherein the thickness of the metal Ag electrode is about 300 nm.
Adopting electron beam evaporation to deposit MgF on the metal electrode 2 The antireflective layer has a thickness of about 100 nm.
Comparative example 1
The structure of the laminated solar cell is shown in fig. 1, and the laminated solar cell comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer.
The preparation method of the laminated solar cell and the tin oxide layer comprises the following steps:
the crystalline silicon cell is selected from an HJT cell;
depositing an ITO composite layer on the n surface of the HJT battery by adopting PVD;
spin-coating a precursor solution of a hole transport layer on the composite layer, and heating and annealing at 100 ℃ for 5min, wherein the material of the layer is MeO-2PACz, and the thickness of the film is about 20 nm;
spin-coating the hole transport layer to obtain a perovskite light-absorbing layer, specifically according to Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 Preparing a precursor solution in proportion, then spin-coating the precursor solution on a hole transport layer, and then annealing at 120 ℃ for 15min to obtain the perovskite thin film with the thickness of 1 mu m;
depositing a LiF charge insulating layer on the perovskite light absorption layer by thermal evaporation, wherein the thickness of the film is about 1 nm;
depositing a C60 electron transport layer on the LiF charge insulating layer by thermal evaporation, wherein the thickness of the film is about 15 nm;
preparing SnO on the C60 electron transport layer by adopting ALD technology 2 An electron transport layer and a buffer layer. The specific process steps are that SnO is prepared in example 1 2 On the basis of the route, the oxygen source is replaced by single deionized water. The method comprises the following steps:
step 1: a tin metal organic source, TDMASn, is introduced to the substrate.
And 2, step: and (5) purging with nitrogen.
And 3, step 3: introducing oxygen source and water.
And 4, step 4: and (6) purging with nitrogen.
After step 4 is completed, step 1 is executed to start a new cycle.
In said SnO 2 And ITO transparent electrodes are deposited on the electron transmission layer and the buffer layer by adopting PVD, and the thickness is about 100 nm.
And depositing a metal Ag electrode on the transparent electrode by thermal evaporation, wherein the thickness of the metal Ag electrode is about 300 nm.
Adopting electron beam evaporation MgF on the metal electrode 2 The antireflective layer has a thickness of about 100 nm.
Comparative example 2
The structure of the laminated solar cell is shown in fig. 1, and the laminated solar cell comprises a crystalline silicon bottom cell, a perovskite top cell, an intermediate composite layer, a transparent electrode, a metal electrode and an antireflection layer.
The preparation method of the laminated solar cell and the tin oxide layer comprises the following steps:
the crystalline silicon cell is a HJT cell;
depositing an ITO composite layer on the n surface of the HJT battery by adopting PVD;
spin-coating a precursor solution of a hole transport layer on the composite layer, and heating and annealing at 100 ℃ for 5min, wherein the material of the layer is MeO-2PACz, and the thickness of the film is about 20 nm;
spin coating perovskite light absorption layer on the hole transport layer, specifically according to Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.25 ) 3 Preparing a precursor solution in proportion, then spin-coating the precursor solution on a hole transport layer, and then annealing at 120 ℃ for 15min to obtain the perovskite thin film with the thickness of 1 mu m;
depositing a LiF charge insulating layer on the perovskite light absorption layer by thermal evaporation, wherein the thickness of the film is about 1 nm;
depositing a C60 electron transport layer on the LiF charge insulating layer by thermal evaporation, wherein the thickness of the film is about 15 nm;
preparing SnO on the C60 electron transport layer by adopting ALD technology 2 The electron transmission layer and the buffer layer comprise the following specific process steps: preparation of SnO in example 1 2 On the basis of the route, the oxygen source is replaced by single ozone. The method comprises the following steps:
step 1: a tin metal organic source, TDMASn, is introduced to the substrate.
Step 2: and (5) purging with nitrogen.
And 3, step 3: introducing oxygen source, ozone.
And 4, step 4: and (5) purging with nitrogen.
After step 4 is completed, step 1 is performed to start a new cycle.
In said SnO 2 And ITO transparent electrodes are deposited on the electron transmission layer and the buffer layer by adopting PVD, and the thickness is about 100 nm.
And depositing a metal Ag electrode on the transparent electrode by thermal evaporation, wherein the thickness of the metal Ag electrode is about 300 nm.
Adopting electron beam evaporation to deposit MgF on the metal electrode 2 The antireflective layer has a thickness of about 100 nm.
SnO prepared by example 1 and comparative examples 1-2 2 The performance data of (a) are shown in table 1 and fig. 2, wherein the carrier concentration, mobility, resistivity are measured using a hall effect tester, and wherein the refractive index is measured using an ellipsometer. And (4) testing the reflectivity by adopting an ultraviolet-visible spectrophotometer.
TABLE 1 SnO 2 Electrical and optical property data of thin films
Figure BDA0003861452960000151
From the reflectance spectra shown in FIG. 2, it can be seen that SnO was prepared by alternating water and ozone 2 The film has lower reflection, i.e., the loss of light in the film is reduced. In addition, the thin film prepared in this way has higher mobility and lower resistivity, which further illustrates that the prepared SnO 2 The film has higher quality and good electron transport capability.
The direct current-voltage (I-V) test was performed on the laminated solar cells prepared in examples 1 to 3 and comparative examples 1 to 2. The test results are shown in table 2:
table 2 solar cell performance data comparison
Figure BDA0003861452960000152
From the I-V test results of examples 1-3 and comparative examples 1 and 2, it can be seen that when tin oxide is prepared by using single oxygen source ALD, the FF of the device is low and the discreteness is large, which indicates that the resistance of charge transfer is increased and the quality of the tin oxide film is poor; when deionized water and ozone are alternately used as oxygen sources, the quality of a tin oxide film can be improved, the crystal growth structure is more regular, the electron transmission capability is improved, and the FF of the prepared device is obviously improved.

Claims (19)

1. The preparation method of the tin dioxide film is characterized by comprising the following steps:
depositing a tin dioxide film on the substrate by an atomic layer deposition technique,
wherein during the deposition process, a step of reacting with the tin metal organic source using the first oxygen source and the second oxygen source alternately as the oxygen sources is included;
the first oxygen source is one or two of water and hydrogen peroxide,
the second oxygen source is one or more selected from ozone, oxygen, nitric oxide, nitrogen dioxide, plasma activated ozone, plasma activated oxygen, plasma activated nitric oxide, or plasma activated nitrogen dioxide.
2. The method according to claim 1, wherein the first oxygen source is water and the second oxygen source is ozone.
3. The method according to claim 1, wherein the organometallic source of tin is selected from the group consisting of alkyltin, tin alkoxides, sn (NR 1R 2) 4 Wherein R1 and R2 are independently selected from C1-C4 alkyl, preferably tetra (dimethylamino) tin.
4. The method of claim 1, wherein the step of using the first source of oxygen and the second source of oxygen alternately as a source of oxygen to react with the tin metal organic source comprises a plurality of the following cycles:
introducing the tin metal organic source and purging with an inert gas, then introducing the first oxygen source or the second oxygen source and purging with an inert gas,
wherein the first and second oxygen sources are used alternately between two adjacent cycles.
5. The method of claim 1, further comprising a plurality of cycling steps of reacting the tin metal organic source using only the first oxygen source prior to the step of reacting the tin metal organic source using the first oxygen source and the second oxygen source alternately as oxygen sources during the deposition process.
6. The method of claim 4, wherein the number of cycles is 50 to 500.
7. The method according to claim 4, wherein the inert gas is nitrogen.
8. The production method according to claim 6, wherein in the nitrogen purging step, the nitrogen purging time is 5 to 15 seconds, and the nitrogen flow rate is 20 to 90sccm.
9. The method according to claim 4, wherein the tin metal organic source is introduced by using an inert gas as a carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-2s; the first oxygen source is introduced by taking inert gas as carrier gas, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s; the second oxygen source is directly introduced, the flow rate is 20-90sccm, and the introduction time is 0.1-1.5s.
10. The method according to claim 1, wherein the tin dioxide thin film has a thickness of 5 to 50nm, preferably 10 to 20nm.
11. The method of claim 1, wherein the substrate is one of C60, C70, PCBM.
12. A tin dioxide electron transport layer prepared by the preparation method of any one of claims 1 to 11.
13. A tin dioxide buffer layer prepared by the preparation method of any one of claims 1-11.
14. A perovskite solar cell comprising the tin dioxide electron transport layer of claim 12 and/or the tin dioxide buffer layer of claim 13.
15. The perovskite solar cell of claim 14, comprising a hole transport layer, a perovskite photoactive layer, an electrically insulating layer, a first electron transport layer and a second electron transport layer, arranged in sequence in a stack, wherein the first electron transport layer is the tin dioxide electron transport layer.
16. The perovskite solar cell of claim 15, wherein the second electron transport layer is one of C60, C70, PCBM.
17. The perovskite solar cell according to claim 15, characterized in that the perovskite solar cell is selected from one of an inorganic perovskite cell, an organic-inorganic hybrid perovskite cell.
18. A perovskite laminate solar cell comprising a crystalline silicon bottom cell, an intermediate composite layer and a perovskite top cell arranged in sequence in a stack, wherein the perovskite top cell is the perovskite solar cell of any one of claims 14 to 17.
19. The perovskite tandem solar cell according to claim 18, wherein the crystalline silicon based cell is selected from one of a PERC cell, a TOPCon cell, an HJT cell, an IBC cell, an HBC cell.
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CN117051381A (en) * 2023-10-13 2023-11-14 无锡松煜科技有限公司 Perovskite battery charge transport layer and perovskite battery preparation method
CN117051381B (en) * 2023-10-13 2023-12-26 无锡松煜科技有限公司 Perovskite battery charge transport layer and perovskite battery preparation method
CN117177584A (en) * 2023-10-17 2023-12-05 无锡松煜科技有限公司 Preparation method of tin dioxide electron transport layer and perovskite battery

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