CN115581080A - Micro perovskite light-emitting unit and preparation method and application thereof - Google Patents
Micro perovskite light-emitting unit and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a micro perovskite luminescence unit and a preparation method and application thereof, (a) perovskite precursor liquid containing mixed amine halide is coated on a substrate and forms a perovskite luminescence layer through heat treatment; the mixed amine halide comprises at least a methylamine halide; (b) And patterning and etching the perovskite luminous layer by using laser beams to obtain the micro perovskite luminous unit. The halogenated methylamine is gasified, the perovskite is decomposed to generate an inorganic barrier layer which has no optical activity and has insulativity, and the laser etching part of the perovskite is decomposed to form a micro-nano perovskite optical activity pattern.
Description
Technical Field
The invention belongs to the technical field of light emitting diodes, relates to a perovskite light emitting unit, and particularly relates to a micro perovskite light emitting unit and a preparation method and application thereof.
Background
With the breakthrough of technologies such as 3D display and virtual reality, people have made higher demands on display technologies, and gradually develop the technologies toward high brightness, high resolution and easy processing. Halide perovskite materials have attracted much attention in recent years due to their advantages of high yield of fluorescent quantum dots, high defect tolerance, excellent carrier transport properties, and simple processing. However, because the perovskite is poor in stability, how to carry out micro-nano processing on perovskite materials to construct micro-nano light-emitting units is a great problem at present.
At present, the main methods for preparing the micro-nano light-emitting unit are methods such as ink-jet printing, transfer printing and photoetching, but the methods often face the problems of complex process flow, high processing cost, high requirement on processing equipment parameters, poor compatibility with perovskite and the like. Therefore, in order to solve the problem of poor stability of perovskite materials, the development of a micro-nano processing method matched with the perovskite materials to meet the requirement of novel display is a problem which needs to be solved at present.
CN110943186B discloses a perovskite patterned thin film and a preparation method and a display device thereof, wherein the disclosed method for preparing a perovskite patterned thin film comprises the steps of firstly mixing a perovskite precursor, a polymer monomer, a photoinitiator and a cross-linking agent to form a pre-polymerized mixed colloidal solution; then coating the pre-polymerization mixed colloidal solution on a substrate with a retaining wall to prepare a pre-polymerization mixture film; secondly, irradiating the pre-polymerization mixture film layer by using ultraviolet light under the shielding of a light cover to form a partial polymerization mixture film layer; then spraying the polymerization mixture film layer by using an organic solvent, and dissolving and removing the part which is not polymerized to form a polymerization mixture film layer; and finally, removing the first organic solvent in the polymerization mixture film layer to obtain the perovskite patterning film. However, the disclosed preparation method has complex process, low manufacturing efficiency and difficulty in realizing large-area patterning preparation.
CN114988463A discloses a method for patterned assembly of halide perovskite, chiral molecules are introduced into the preparation of perovskite nanocrystals, and the perovskite material is induced to generate a two-dimensional self-assembly effect through the enantioselective interaction of the chiral molecules with oleic acid on the surface of the perovskite in different conformations; the chiral amino functional group on the surface of the chiral molecule and oleic acid oleylamine can form a hydrogen bond, so that patterned three-dimensional self-assembly of the perovskite nanocrystal is realized. Although the method utilizes the steady state balance of Gibbs free energy under the combination system of the grain anisotropy and the chiral molecules to drive and induce the perovskite material to generate the three-dimensional self-assembly effect, the controllability of the patterns is poor, and the rapid preparation of various patterns is difficult to realize.
CN111273518B discloses a laser direct writing-based halogen perovskite nanocrystalline blue light patterning method. And local anion exchange is induced by using focused laser local light and programmed movement is realized through an electric translation stage, so that blue light fluorescence patterning is realized. Compared with the existing halogen perovskite pattern changing method, the method realizes the nano-crystalline blue light patterning and the regulation and control of the fluorescence spectrum peak position, but in the preparation process, halogenated alkane with strong toxicity is required to be used, and the prepared mixed halogen perovskite has the problem of spectrum drift, so that the actual application range of the perovskite pattern is limited.
Therefore, it is urgent to develop a method that is simple in process and capable of manufacturing a large-area micro perovskite light emitting unit.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a preparation method of a micro perovskite light-emitting unit.
In order to achieve the above object, the present invention provides a method for preparing a micro perovskite light emitting unit, comprising the steps of:
(a) Coating a perovskite precursor solution containing mixed amine halide on a substrate, and forming a perovskite light-emitting layer through heat treatment; the mixed amine halide comprises at least a methylamine halide;
(b) And patterning and etching the perovskite luminous layer by using laser beams to obtain the micro perovskite luminous unit.
As a preferred embodiment of the present invention, the mixed halogenated amine further comprises a mixture of one or more of halogenated ethylamine, halogenated formamidine, halogenated dimethylamine, halogenated propylamine, halogenated butylamine, halogenated benzylamine, halogenated phenethylamine, halogenated naphthylmethylamine and halogenated naphthylethylamine;
preferably, the molar ratio of the halogenated methylamine in the mixed halogenated amine is 5-100%;
preferably, the amine halide is a mixture of one or more selected from amine chloride, amine bromide and amine iodide, and the concentration of the amine halide in the perovskite precursor solution is 0.05-5.0mol/L.
As a preferred technical solution of the present invention, the solute of the perovskite precursor solution is a mixture of one or more selected from lead salts and stannous salts, wherein the lead salts include lead halides, lead acetate and lead formate, and the stannous salts include stannous halides, stannous acetate and stannous formate;
preferably, the solvent of the perovskite precursor liquid is a mixture consisting of one or more selected from dimethyl sulfoxide, formamide, butyrolactone and methyl pyrrolidone;
preferably, the molar ratio of the solute of the perovskite precursor liquid to the halogenated methylamine is 0.5 to 5:1.
as a preferable technical scheme of the invention, the heat treatment is heat treatment at 80-110 ℃ for 5-10min;
preferably, the perovskite precursor liquid is subjected to glue homogenizing treatment during coating;
preferably, an anti-solvent is also added dropwise in the glue homogenizing treatment process, and the anti-solvent is one or a mixture of ethyl acetate, toluene, chlorobenzene and chloroform.
In a preferred embodiment of the present invention, the thickness of the perovskite light-emitting layer is 10nm to 100 μm.
As a preferable technical scheme of the invention, the wavelength of the laser beam is 0.3-20 μm, the average power is 0.1-100W, the pulse width is 1-500ns, the laser frequency is 1-1000kHz, the diameter of a focusing light spot is 0.1-100 μm, and the moving speed of the light spot is 0.01-20mm/s;
preferably, the perovskite light emitting layer is at a distance of 1-100cm from the laser beam light source.
It is still another object of the present invention to provide a micro perovskite light emitting unit which is manufactured by the above manufacturing method.
Optimally, the resolution of the micro perovskite luminescent unit is 300-5000PPI.
It is a further object of the present invention to provide the use of a micro perovskite light emitting cell for the fabrication of a light emitting diode.
Preferably, the light-emitting diode comprises an indium tin oxide substrate, a hole injection layer, a hole transport layer, a perovskite layer, an electron transport layer and a metal electrode which are sequentially stacked, wherein the perovskite layer is the micro perovskite light-emitting unit.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: according to the preparation method of the micro perovskite luminescent unit, the perovskite precursor liquid containing the mixed halogenated amine is adopted, the mixed halogenated amine at least comprises the halogenated methylamine, the perovskite luminescent layer is formed, the laser etching is matched, the halogenated methylamine is gasified, the perovskite is decomposed to generate the inorganic barrier layer which has no optical activity and is insulating, and the laser etching part of the perovskite is decomposed to form the micro nano perovskite optical activity pattern.
Compared with the traditional photoetching preparation of luminescent layer patterns, the method creatively utilizes the laser to decompose perovskite to generate the insulating barrier layer without optical activity to prepare the micro perovskite luminescent unit, solves the problem of inactivation of the perovskite luminescent layer caused by poor compatibility between the traditional photoetching process and perovskite materials, does not need photoresist, simplifies the processing process, improves the processing efficiency, and is suitable for large-area patterning preparation. Compared with the process of preparing the patterning by adopting the method of synthesizing the perovskite quantum dots in advance and self-assembling the ligand, the method can easily realize the controllable preparation of various patterns by regulating the diameter of the laser spot and the moving speed, and the plasticity of the pattern preparation is strong.
The micro perovskite light-emitting unit prepared by the invention can be used for preparing a light-emitting diode, and is beneficial to improving the resolution of a perovskite display device; the inorganic barrier layer which is generated by decomposing perovskite and has no optical activity and insulativity is used for isolating the contact between the hole transport layer and the electron transport layer, thereby being beneficial to inhibiting electric leakage.
Drawings
FIG. 1 is a schematic flow chart of a method for preparing a micro perovskite light-emitting unit according to the present invention;
FIG. 2 is a schematic structural view of a perovskite light-emitting layer of the present invention;
FIG. 3 is a schematic diagram of the structure of a micro perovskite light-emitting unit according to the present invention;
fig. 4 is a schematic structural diagram of a light emitting diode according to the present invention.
Detailed Description
The preparation method of the micro perovskite light-emitting unit comprises the following steps: (a) Coating a perovskite precursor solution containing mixed amine halide on a substrate, and forming a perovskite light-emitting layer through heat treatment; the mixed amine halide comprises at least a methylamine halide; (b) And patterning and etching the perovskite luminous layer by using laser beams to obtain the micro perovskite luminous unit. The perovskite precursor liquid containing mixed amine halide is adopted, the mixed amine halide at least comprises methylamine halide, a perovskite luminescent layer is formed, laser etching is matched, the methylamine halide is gasified, an inorganic barrier layer which has no optical activity and is insulating is generated by decomposing perovskite, and a micro-nano perovskite photoactive pattern is formed while partial perovskite is decomposed by laser etching. Compared with the traditional photoetching preparation of luminescent layer patterns, the method has the advantages that the problem of perovskite luminescent layer inactivation caused by poor compatibility between the traditional photoetching process and perovskite materials is solved by innovatively utilizing the insulating barrier layer without optical activity generated by decomposing perovskite by laser to prepare the micro perovskite luminescent unit, photoresist is not needed, the processing process is simplified, the processing efficiency is improved, and the method is also suitable for large-area patterning preparation. Compared with the process of preparing the patterning by adopting the method of synthesizing the perovskite quantum dots in advance and self-assembling the ligand, the method can easily realize the controllable preparation of various patterns by regulating the diameter of the laser spot and the moving speed, and the plasticity of the pattern preparation is strong.
Preferably, the mixed halogenated amine further comprises a mixture of one or more of halogenated ethylamine, halogenated formamidine, halogenated dimethylamine, halogenated propylamine, halogenated butylamine, halogenated benzylamine, halogenated phenethylamine, halogenated naphthylmethylamine and halogenated naphthylethylamine; the molar ratio of the halogenated methylamine in the mixed halogenated amine is 5-100% (preferably 30-100%); the amine halide is a mixture of one or more selected from amine chloride, amine bromide and amine iodide, and the concentration of the amine halide in the perovskite precursor solution is 0.05-5.0mol/L (preferably 0.1-1.0 mol/L).
Optimally, the solute of the perovskite precursor liquid is a mixture consisting of one or more of lead salt and stannous salt, wherein the lead salt comprises lead halide, lead acetate and lead formate, and the stannous salt comprises stannous halide, stannous acetate and stannous formate; the solvent of the perovskite precursor liquid is a mixture consisting of one or more of dimethyl sulfoxide, formamide, butyrolactone and methyl pyrrolidone; the molar ratio of the solute of the perovskite precursor liquid to the halogenated methylamine is 0.5-5: 1 (preferably 0.5 to 2:1).
Optimally, the perovskite precursor liquid is subjected to glue homogenizing treatment during coating; the coating method is spin coating, spray coating, blade coating or printing. The invention is exemplified by a spin coating mode: coating a perovskite precursor solution containing mixed amine halide on a substrate to prepare a perovskite luminescent layer, wherein the glue homogenizing speed is 1000-6000rpm/min, the glue homogenizing time is 0.5-3min, an anti-solvent is one or more of ethyl acetate, toluene, chlorobenzene and chloroform, the dripping time of the anti-solvent solution is 30-36s after the glue homogenizing is started, and then heating the substrate coated with perovskite at 80-110 ℃ for 5-10min.
Preferably, the thickness of the perovskite light emitting layer is 10nm to 100 μm (preferably 50 to 500 nm).
Optimally, the wavelength of the laser beam is 0.3-20 μm, the average power is 0.1-100W, the pulse width is 1-500ns, the laser frequency is 1-1000kHz, the diameter of a focusing spot is 0.1-100 μm, and the moving speed of the spot is 0.01-20mm/s; the distance between the perovskite luminous layer and the laser beam light source is 1-100cm. The resolution ratio of the pattern can be regulated and controlled by changing the diameter of a laser focusing spot, and the resolution ratio range of the prepared micro-nano perovskite photoactive pattern is 300-5000PPI.
The application of the micro perovskite light-emitting unit is used for manufacturing a light-emitting diode. The light-emitting diode comprises an indium tin oxide substrate, a hole injection layer, a hole transport layer, a perovskite layer, an electron transport layer and a metal electrode which are sequentially stacked, wherein the perovskite layer is the micro perovskite light-emitting unit and is prepared by adopting the conventional method.
The following provides a detailed description of preferred embodiments of the invention.
Example 1
The present embodiment provides a micro perovskite light emitting unit and a preparation method thereof, including the following steps (as shown in fig. 1):
(a) Preparation of substrate (substrate a): ultrasonically cleaning indium tin oxide glass by using deionized water, acetone and isopropanol in sequence, drying, and then cleaning for 15 minutes by using ultraviolet ozone for later use;
preparing a perovskite precursor solution: 0.3mmol of methylamine bromide, 0.12mmol of phenethylamine bromide and 0.3mmol of lead bromide are taken to be stirred in 1mL of dimethyl sulfoxide for 6 hours;
spin-coating the perovskite precursor solution on the prepared substrate a at 3500rpm/min (see figure 2), and dripping 200 μ L of toluene at 35s from the beginning of gel homogenization; then annealing at 90 ℃ for 5 minutes to obtain a perovskite luminescent layer (namely obtaining a perovskite thin film b, figure 2);
(b) The prepared perovskite thin film is placed under a laser beam (with the distance of 45 cm) with the wavelength of 1.064 mu m, the spot diameter of 10 mu m, the power of 2W, the moving speed of 0.1mm/s, the laser pulse width of 90ns and the laser frequency of 20kHz for patterning and etching to obtain the micro perovskite light-emitting unit. During laser etching, the perovskite is thermally decomposed and the methylamine salt is gasified to produce an optically inactive inorganic lead halide or stannous halide barrier layer c (see fig. 3).
Example 2
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: the amount of methylamine bromide in the prepared perovskite precursor liquid is 0.1mmol.
Example 3
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: the amount of methylamine bromide in the prepared perovskite precursor liquid is 0.9mmol.
Example 4
This example provides a micro perovskite light-emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: the prepared perovskite precursor liquid does not contain brominated phenethylamine.
Example 5
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: 0.09mmol of methylamine bromide, 0.33mmol of phenethylamine bromide and 0.3mmol of lead bromide are taken and stirred in 1mL of dimethyl sulfoxide for 6 hours.
Example 6
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: 0.3mmol of methylamine bromide, 0.12mmol of phenethylamine bromide and 0.3mmol of lead bromide are taken and stirred in 6mL of dimethyl sulfoxide for 6 hours.
Example 7
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: 0.45mmol of methylamine bromide, 0.45mmol of phenethylamine bromide and 0.45mmol of lead bromide are taken and stirred in 1mL of dimethyl sulfoxide for 6 hours.
Example 8
This example provides a micro perovskite light emitting unit and a method for manufacturing the same, which are substantially the same as those in example 1, except that: in the step (b), the prepared perovskite thin film is placed under a laser beam (with the distance of 20 cm) with the wavelength of 1.064 mu m, the spot diameter of 10 mu m, the power of 10W, the laser pulse width of 100ns, the moving speed of 0.01mm/s and the laser frequency of 1000kHz for patterning and etching to obtain the micro perovskite light-emitting unit.
Comparative example 1
The comparative example provides a preparation method of a non-halogenated methylamine type perovskite micro luminescent layer, which has the same steps as the example 1, and is different in that halogenated methylamine in perovskite precursor liquid is replaced by cesium halide, namely the perovskite precursor liquid is adopted as follows: 0.3mmol of cesium bromide, 0.12mmol of phenethylamine bromide and 0.3mmol of lead bromide are taken and stirred in 1mL of dimethyl sulfoxide for 6 hours.
Comparative example 2
This comparative example provides a method of making a non-halogenated methylamine type perovskite micro-emissive layer, which has substantially the same steps as example 1, except that: the mixed amine halide in the perovskite precursor liquid does not contain methylamine halide, namely the adopted perovskite precursor liquid is as follows: 0.12mmol of phenethylamine bromide and 0.3mmol of lead bromide are stirred in 1mL of dimethyl sulfoxide for 6 hours.
The micro perovskite luminescence sheets prepared in examples 1-9 and comparative examples 1-2 were tested and the results are shown in table 1 (supplementary test method or standard).
Table 1 is a table of test data for micro perovskite light emitting units prepared in examples 1-9 and comparative examples 1-2
| Emission wavelength (nm) | Pattern definition situation | Laser marking performance | |
| Example 1 | 532 | Clear and clear | Is excellent in |
| Example 2 | 506 | In general | Good effect |
| Example 3 | 527 | Clear and clear | Is excellent in |
| Example 4 | 535 | Clear and clear | Is excellent in |
| Example 5 | 496 | Clear and clear | Is excellent in |
| Example 6 | 531 | Clear and clear | Is excellent in |
| Example 7 | 510 | Clear and clear | Is excellent in |
| Example 8 | 532 | Clear and clear | Is excellent in |
| Comparative example 1 | 523 | Blurring | In general |
| Comparative example 2 | / | Blurring | Is poor |
As can be seen from the data analysis of the table 1 in examples 2-3 and example 1, the concentration of methylamine bromide has a great influence on the laser marking performance of the micro perovskite luminescent unit, and when the concentration is lower than 0.1mmol/mL, the definition of the micro perovskite luminescent unit is reduced; the definition is not affected when the concentration of the compound is increased to 0.9mmol/mL, so that the concentration of the methylamine bromide can be changed within a certain range and a clear perovskite luminescent unit pattern is still obtained.
Comparing example 1 with examples 4-5, it can be seen that: the lack of the brominated phenethylamine has no obvious influence on the laser marking performance, and the improvement of the concentration of the brominated phenethylamine can cause the blue shift of the position of an emission peak.
Comparing example 1 with examples 6-7, it can be seen that: when the concentration of the perovskite precursor liquid is lower than 0.1mmol/mL (0.05 mmol/mL) or higher than 0.3mmol/mL (0.45 mmol/mL), the definition of the micro perovskite light-emitting unit is not affected, and the thickness of the perovskite thin film can be changed by accurately controlling the concentration of the perovskite precursor liquid to obtain a clear perovskite light-emitting unit pattern.
Comparing comparative example 1 with example 1, it can be seen that: the laser marking performance of the cesium bromide-based perovskite is reduced, a clear micro perovskite light-emitting unit is difficult to obtain, and methylamine bromide is beneficial to improving the laser marking performance and obtaining the clear micro perovskite light-emitting unit.
Comparing comparative example 1 with example 2, it can be seen that: the perovskite thin film based on pure brominated phenethylamine (without the participation of brominated methylamine) cannot directly observe a fluorescence emission peak, so that a clear micro perovskite luminescent unit is difficult to obtain.
The micro perovskite light-emitting unit in the embodiment 1 is also manufactured into a light-emitting diode, which specifically comprises the following steps: coating poly (3,4-ethylenedioxythiophene) polystyrene sulfonate and polyvinyl carbazole on the surface of indium tin oxide glass, namely taking 100 mu l of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate, spin-coating the poly (3,4-ethylenedioxythiophene) polystyrene sulfonate on the indium tin oxide glass at the speed of 4000rpm/min, annealing at 150 ℃ for 25 minutes, and cooling to room temperature to obtain a hole injection layer; then spin coating 10mg/ml polyvinylcarbazole chlorobenzene solution on the hole injection layer at the speed of 4000rpm/min, and annealing at 130 ℃ for 20 minutes to prepare a hole transport layer; forming a micro perovskite luminous unit layer on the surface of the hole transport layer according to the previous examples or comparative examples, and then sequentially preparing an electron transport layer and a metal electrode: the micro perovskite light-emitting unit is placed in a thermal evaporation device to be sequentially evaporated with 55nm 1,3, 5-tri (1-phenyl-1H-benzimidazole-2-yl) benzene (used as an electron transport layer), 1nm lithium fluoride and a 150nm aluminum electrode (the lithium fluoride is an electrode modification layer, and the aluminum electrode is a metal electrode), so that the light-emitting diode is prepared, and the structure of the light-emitting diode is shown in figure 4.
Table 2 is a table of test data for fabrication of micro perovskite light emitting cells into light emitting diodes in examples and comparative examples
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A preparation method of a micro perovskite light-emitting unit is characterized by comprising the following steps:
(a) Coating a perovskite precursor solution containing mixed amine halide on a substrate, and forming a perovskite light-emitting layer through heat treatment; the mixed amine halide comprises at least a methylamine halide;
(b) And patterning and etching the perovskite luminous layer by using laser beams to obtain the micro perovskite luminous unit.
2. The method for producing a micro perovskite light-emitting unit according to claim 1, characterized in that: the mixed halogenated amine also comprises a mixture consisting of one or more of halogenated ethylamine, halogenated formamidine, halogenated dimethylamine, halogenated propylamine, halogenated butylamine, halogenated benzylamine, halogenated phenethylamine, halogenated naphthylmethylamine and halogenated naphthylethylamine;
preferably, the molar ratio of the halogenated methylamine in the mixed halogenated amine is 5-100%;
preferably, the amine halide is a mixture of one or more selected from amine chloride, amine bromide and amine iodide, and the concentration of the amine halide in the perovskite precursor solution is 0.05-5.0mol/L.
3. The method for producing a micro perovskite light-emitting unit according to claim 1, characterized in that: the solute of the perovskite precursor liquid is a mixture consisting of one or more of lead salt and stannous salt, the lead salt comprises lead halide, lead acetate and lead formate, and the stannous salt comprises stannous halide, stannous acetate and stannous formate;
preferably, the solvent of the perovskite precursor liquid is a mixture consisting of one or more selected from dimethyl sulfoxide, formamide, butyrolactone and methyl pyrrolidone;
preferably, the molar ratio of the solute of the perovskite precursor liquid to the halogenated methylamine is 0.5 to 5:1.
4. the method of manufacturing a micro perovskite light-emitting unit according to claim 1, characterized in that: the heat treatment is heating treatment at 80-110 deg.C for 5-10min;
preferably, the perovskite precursor liquid is subjected to glue homogenizing treatment during coating;
preferably, an anti-solvent is also added dropwise in the glue homogenizing treatment process, and the anti-solvent is one or a mixture of ethyl acetate, toluene, chlorobenzene and chloroform.
5. The method of manufacturing a micro perovskite light-emitting unit according to claim 1, characterized in that: the thickness of the perovskite luminous layer is 10nm-100 mu m.
6. The method for producing a micro perovskite light-emitting unit according to claim 1, characterized in that: the wavelength of the laser beam is 0.3-20 mu m, the average power is 0.1-100W, the pulse width is 1-500ns, the laser frequency is 1-1000kHz, the diameter of a focused light spot is 0.1-100 mu m, and the moving speed of the light spot is 0.01-20mm/s;
preferably, the perovskite light emitting layer is at a distance of 1-100cm from the laser beam light source.
7. A micro perovskite light emitting cell, characterized by: it is produced by the production method described in any one of claims 1 to 6.
8. The micro perovskite light emitting cell of claim 7, wherein: its resolution is 300-5000PPI.
9. Use of a micro perovskite light emitting cell as claimed in claim 7 or 8, wherein: it is used for manufacturing light-emitting diodes.
10. Use of a micro perovskite light-emitting cell according to claim 9, characterized in that: the light-emitting diode comprises an indium tin oxide substrate, a hole injection layer, a hole transport layer, a perovskite layer, an electron transport layer and a metal electrode which are sequentially stacked, wherein the perovskite layer is the micro perovskite light-emitting unit.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115124432A (en) * | 2022-07-25 | 2022-09-30 | 上海科技大学 | Chiral tin-lead mixed perovskite-based circularly polarized photoelectric detector and preparation method thereof |
| CN116390517A (en) * | 2023-04-18 | 2023-07-04 | 北京高德品创科技有限公司 | Perovskite light-emitting transistor and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115124432A (en) * | 2022-07-25 | 2022-09-30 | 上海科技大学 | Chiral tin-lead mixed perovskite-based circularly polarized photoelectric detector and preparation method thereof |
| CN115124432B (en) * | 2022-07-25 | 2024-01-16 | 上海科技大学 | Circular polarized light electric detector based on chiral tin-lead mixed perovskite and preparation method thereof |
| CN116390517A (en) * | 2023-04-18 | 2023-07-04 | 北京高德品创科技有限公司 | Perovskite light-emitting transistor and preparation method thereof |
| CN116390517B (en) * | 2023-04-18 | 2023-09-19 | 北京高德品创科技有限公司 | Perovskite light-emitting transistor and preparation method thereof |
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Inventor after: Ren Zhenwei Inventor after: Chen Yu Inventor before: Ren Zhenwei |