CN115579323A - 一种金刚石衬底GaN器件通孔的制备方法 - Google Patents
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Abstract
本发明公开了一种金刚石衬底GaN器件通孔制备的方法，包括：金刚石衬底背面激光刻蚀通孔，刻穿正面GaN器件源极金属；使用临时粘合材料将金刚石衬底GaN器件正面与临时载片键合；金刚石衬底背面及通孔内沉积种子层金属，并电镀沉积背金；去除正面临时载片和临时粘合材料；正面GaN器件源极金属上面二次电镀金属，实现源极金属与通孔金属互连。本发明直接采用激光刻蚀通孔的方法，具有简单快速的优点，同时采用临时键合结合二次电镀的方法，解决的金刚石刻蚀通孔电镀互连的问题，获得了较好的电学接地。
Description
技术领域
本发明涉及半导体工艺技术领域，尤其涉及一种金刚石衬底GaN器件通孔的制备方法。
背景技术
随GaN器件作为第三代宽禁带化合物半导体器件，具有高二维电子气浓度、高击穿场强、高的电子饱和速度等特点。不过目前GaN器件随着功率密度的增加，器件有源区的热积累效应快速增加，导致其直流和功率性能迅速退化，功率优势未能充分发挥。所以散热问题成为制约GaN器件进一步发展的主要技术瓶颈之一。GaN器件目前常用衬底材料包括硅、蓝宝石和碳化硅等，这些材料的热导率较低，难以满足高功率条件下的散热需求。采用高热导率金刚石作为大功率GaN器件的衬底，可以降低GaN器件的热效应，有望解决因散热问题导致功率密度迅速下降的问题，不过金刚石衬底GaN器件要真正应用还需解决一系列问题，包括金刚石衬底的通孔问题。
由于金刚石衬底材料具有硬度大的特性，金刚石衬底GaN器件通孔制备工艺一直是个难题，通孔直接影响器件的接地好坏从而制约器件的性能。目前激光刻蚀金刚石衬底形成通孔后存在电镀金属难以互连的问题，从而影响GaN器件的电学性能。
发明内容
针对以上问题，本发明提出一种金刚石衬底GaN器件通孔的制备方法。
为实现本发明的目的，提供一种金刚石衬底GaN器件通孔的制备方法，用于针对由金刚石衬底、GaN外延层、GaN器件源极金属按顺序依次堆叠所构金刚石衬底GaN器件，执行如下步骤，实现金刚石衬底GaN器件通孔的制备；
所述制备方法具体包括如下步骤：
S1：采用脉冲激光器从所述金刚石衬底背离所述GaN外延层的一面入射激光进行刻蚀，刻蚀依次穿透所述金刚石衬底、GaN外延层和GaN器件源极金属，从而形成通孔；
S2：将预备的临时载片通过预制的临时粘合材料键合在所述GaN器件源极金属背离所述GaN外延层的一面，并且所述临时载片覆盖在所述通孔的上方；
S3：先在所述金刚石衬底背离所述GaN外延层的一面及所述通孔内沉积种子层金属，然后电镀沉积金属；
S4：将所述临时载片机械去除，并将残留的临时粘合材料清洗干净；
S5：在所述GaN器件源极金属背离所述GaN外延层的一面沉积种子层金属，然后二次电镀沉积金属。
进一步地，所述预制的金刚石衬底GaN器件为高电子迁移率晶体管、场效应晶体管或肖特基二极管，所述金刚石衬底厚度为80-120μm。
进一步地，所述步骤S1中，脉冲激光器选用包含飞秒、皮秒以及纳秒的激光器；激光刻蚀的入射孔径大小为30-80μm，出射孔径大小为20-70μm。
进一步地，所述步骤S2中，所述预制的临时粘合材料为树脂材料或蜡类材料，所述预备的临时载片为硅片。
进一步地，所述步骤S3中，所述种子层金属包括：W、Ti、Ni、Au中的至少2种金属，所述种子层金属厚度为200-500nm，电镀沉积的金属厚度为2-5μm。
进一步地，所述步骤S4中，将所述临时载片机械去除的方式包括：机械分离或者热解分离。
进一步地，所述步骤S5中，所述种子层金属包括：W、Ti、Ni、Au中的至少2种金属，所述种子层金属厚度为200-500nm，二次电镀沉积的金属厚度为2-5μm。
跟现有技术相比，本发明具有以下有益的技术效果：
激光刻蚀金刚石通孔相比等离子体干法刻蚀具有简单快速的优势，同时采用临时键合结合二次电镀的方法，解决了金刚石刻蚀通孔电镀互连的问题，获得了较好的电学接地。
附图说明
图1是一个实施例的一种金刚石衬底GaN器件通孔的制备方法的流程示意图；
图2是一个实施例的金刚石衬底GaN器件样品示意图；
图3是一个实施例的金刚石衬底GaN器件通孔示意图；
图4是一个实施例的金刚石衬底GaN器件临时键合示意图；
图5为一个实施例的金刚石衬底GaN器件背面及通孔电镀示意图；
图6为一个实施例的临时载片分离后示意图；
图7为一个实施例的金刚石衬底GaN器件源极金属二次电镀互连示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。
参考图1所示，图1为一个实施例的金刚石衬底GaN器件通孔制备的方法的流程示意图，主要包括以下步骤：
1)准备样品：完成金刚石衬底GaN器件的制备，其中GaN器件是高电子迁移率晶体管，金刚石衬底厚度为100μm，如图2所示为金刚石衬底GaN器件样品示意图。
2)刻蚀通孔：采用皮秒激光从金刚石衬底背面入射刻蚀，激光刻蚀入射孔径大小50μm，出射孔径大小40μm，刻蚀穿透金刚石衬底、GaN外延层以及GaN器件的源极金属，形成刻蚀通孔，如图3所示为金刚石衬底GaN器件通孔示意图。
3)临时键合：使用蓝宝石片作为临时载片，使用涂覆机在临时载片的正面涂敷粘合材料作为键合材料，其中涂覆机的转速为1000rpm，时间为30s，所述粘合材料是树脂材料。将金刚石衬底GaN器件和蓝宝石片正面相对放入键合机，在温度为150℃的条件下进行键合，图4是金刚石衬底GaN器件临时键合示意图。
4)电镀金属：在金刚石衬底背面及通孔内沉积种子层金属，所述种子层金属是Ti、Au两种金属，种子层金属厚度为200nm，电镀沉积的金属厚度为4μm，图5是金刚石衬底GaN器件背面及通孔电镀示意图。
5)去键合：使用机械分离的方法将蓝宝石片分离并使用清洗剂将树脂材料清洗干净；如图6所示是临时载片分离后示意图。
6)二次电镀互连：在金刚石衬底GaN器件的源极金属上面沉积种子层金属，所述种子层金属是Ti、Au两种金属，种子层金属厚度为200nm，并二次电镀沉积的金属厚度为3μm，图7是金刚石衬底GaN器件源极金属二次电镀互连示意图。
经过以上步骤，就实现了金刚石衬底GaN器件通孔互连的制备。
在一个实施例中，所述GaN器件是场效应晶体管。
在一个实施例中，激光刻蚀入射孔径大小60μm，出射孔径大小50μm。
在一个实施例中，临时载片是硅片，临时粘合材料是胶类材料，涂覆机的转速为2000rpm，时间为40s，键合温度为180℃。
在一个实施例中，种子层金属包含W、Ti、和Au三种金属；所述种子层金属厚度为300nm；电镀沉积的背金厚度为3μm。
在一个实施例中，使用热解分离的方法将临时载片分离。
在一个实施例中，种子层金属包含W、Ti、和Au三种金属；所述种子层金属厚度为300nm；二次电镀沉积的金属厚度为2μm。
在一个实施例中，所述GaN器件是肖特基二极管。
在一个实施例中，激光刻蚀入射孔径大小80μm，出射孔径大小70μm。
在一个实施例中，临时载片是碳化硅片，临时粘合材料是蜡类材料，涂覆机的转速为3000rpm，时间为50s，键合温度为200℃。
在一个实施例中，种子层金属包含W、Ti、Ni、Au四种金属；所述种子层金属厚度为500nm；电镀沉积的背金厚度为5μm。
在一个实施例中，种子层金属包含W、Ti、Ni、Au四种金属；所述种子层金属厚度为500nm；二次电镀沉积的金属厚度为4μm。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
需要说明的是，本申请实施例所涉及的术语“第一\第二\第三”仅仅是区别类似的对象，不代表针对对象的特定排序，可以理解地，“第一\第二\第三”在允许的情况下可以互换特定的顺序或先后次序。应该理解“第一\第二\第三”区分的对象在适当情况下可以互换，以使这里描述的本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。
本申请实施例的术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。例如包含了一系列步骤或模块的过程、方法、装置、产品或设备没有限定于已列出的步骤或模块，而是可选地还包括没有列出的步骤或模块，或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或模块。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。
Claims (7)
1.一种金刚石衬底GaN器件通孔的制备方法，其特征在于：用于针对由金刚石衬底、GaN外延层、GaN器件源极金属按顺序依次堆叠所构金刚石衬底GaN器件，执行如下步骤，实现金刚石衬底GaN器件通孔的制备；
所述制备方法具体包括如下步骤：
S1：采用脉冲激光器从所述金刚石衬底背离所述GaN外延层的一面入射激光进行刻蚀，刻蚀依次穿透所述金刚石衬底、GaN外延层和GaN器件源极金属，从而形成通孔；
S2：将预备的临时载片通过预制的临时粘合材料键合在所述GaN器件源极金属背离所述GaN外延层的一面，并且所述临时载片覆盖在所述通孔的上方；
S3：先在所述金刚石衬底背离所述GaN外延层的一面及所述通孔内沉积种子层金属，然后电镀沉积金属；
S4：将所述临时载片机械去除，并将残留的临时粘合材料清洗干净；
S5：在所述GaN器件源极金属背离所述GaN外延层的一面沉积种子层金属，然后二次电镀沉积金属。
2.根据权利要求1所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述预制的金刚石衬底GaN器件为高电子迁移率晶体管、场效应晶体管或肖特基二极管，所述金刚石衬底厚度为80-120μm。
3.根据权利要求2所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述步骤S1中，脉冲激光器选用包含飞秒、皮秒以及纳秒的激光器；激光刻蚀的入射孔径大小为30-80μm，出射孔径大小为20-70μm。
4.根据权利要求3所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述步骤S2中，所述预制的临时粘合材料为树脂材料或蜡类材料，所述预备的临时载片为硅片。
5.根据权利要求4所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述步骤S3中，所述种子层金属包括：W、Ti、Ni、Au中的至少2种金属，所述种子层金属厚度为200-500nm，电镀沉积的金属厚度为2-5μm。
6.根据权利要求5所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述步骤S4中，将所述临时载片机械去除的方式包括：机械分离或者热解分离。
7.根据权利要求6所述的金刚石衬底GaN器件通孔的制备方法，其特征在于，所述步骤S5中，所述种子层金属包括：W、Ti、Ni、Au中的至少2种金属，所述种子层金属厚度为200-500nm，二次电镀沉积的金属厚度为2-5μm。
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