CN115575790B - Method and device for detecting defects of micron light emitting diode chip and storage medium - Google Patents
Method and device for detecting defects of micron light emitting diode chip and storage medium Download PDFInfo
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Abstract
The invention discloses a method, a device and a storage medium for detecting the defects of a micron light-emitting diode chip, belonging to the technical field of chip detection, wherein the method comprises the following steps: acquiring spectral data of a micron light-emitting diode chip, and converting the spectral data into a spectral vector to be measured; determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter accords with a preset detection condition, taking the spectral vector to be detected as a target spectral vector; and determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the size relation between the second angle parameter and a preset parameter threshold value. The invention detects the defects of the micron light-emitting diode chip by matching the spectrum angle, thereby realizing the technical effect of improving the detection efficiency of the micron light-emitting diode chip.
Description
Technical Field
The invention relates to the technical field of chip detection, in particular to a method and equipment for detecting defects of a micron light-emitting diode chip and a storage medium.
Background
The Micro-LED (Micro-Light Emitting Diode) display technology is a display technology in which a self-luminous Micro-LED (Light-Emitting Diode) is used as a Light-Emitting pixel unit, and the Light-Emitting pixel unit is assembled on a driving panel to form a high-density LED array. The Micro-LED chip has the characteristics of small size, high integration level, self-luminescence and the like, and has certain advantages when being applied to display products.
The current Micro-LED industry detects whether the emission spectrum is abnormal or not by mainly using the CIE (Commission Internationale de l Eclairage) standard to calculate the dominant wavelength and the color purity of the light emitted by the Micro-LED chip, the CIE calculation process mainly depends on an interpolation algorithm and is relatively complex, the number of chips used by products using the Micro-LED is large, and the detection process consumes long time, resulting in low detection efficiency.
Disclosure of Invention
The invention mainly aims to provide a method, equipment and a storage medium for detecting defects of a micron light-emitting diode chip, and aims to solve the problem of low detection efficiency of a micron light-emitting diode display product.
In order to achieve the above object, the present invention provides a method for detecting defects of a micro light emitting diode chip, the method comprising:
acquiring spectral data of a micron light-emitting diode chip, and converting the spectral data into a spectral vector to be measured;
determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter accords with a preset detection condition, taking the spectral vector to be detected as a target spectral vector;
and determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the size relation between the second angle parameter and a preset parameter threshold value.
Optionally, the step of acquiring spectral data of the micro-led chip includes:
sending a first spectrum acquisition signal to a huge spectrum acquisition device, and controlling the huge spectrum acquisition device to acquire the spectrum data according to a preset first sampling interval;
and receiving a spectral imaging frame sent by the massive spectral acquisition equipment, wherein the spectral imaging frame comprises spectral data of a plurality of micron light-emitting diode chips.
Optionally, the step of acquiring spectral data of the micro-led chip includes:
sending a second spectrum acquisition signal to a spectrometer, and controlling the spectrometer to acquire the spectrum data according to a preset second sampling interval;
and receiving the spectral data sent by the spectrometer.
Optionally, the step of converting the spectral data into a spectral vector to be measured includes:
determining a detection wavelength in the spectrum data and a spectrum response value corresponding to the detection wavelength;
and generating the spectrum vector to be detected according to the spectrum response value.
Optionally, the determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter meets a preset detection condition, the step of using the spectral vector to be detected as a target spectral vector includes:
calculating a cosine value of a first included angle between the spectrum vector to be measured and the background spectrum vector;
and if the cosine value of the first included angle is smaller than a preset first cosine value threshold value, determining the spectral vector to be detected as a target spectral vector.
Optionally, the step of determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and determining whether the micro light emitting diode chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold includes:
acquiring a spectrum vector of a standard chip as the reference spectrum vector, and calculating a cosine value of a second included angle between the target spectrum vector and the reference spectrum vector;
if the cosine value of the second included angle is larger than a preset second cosine value threshold value, determining that the micron light-emitting diode chip is normal;
and if the cosine value of the second included angle is smaller than or equal to a preset second cosine value threshold value, determining that the micron light-emitting diode chip is abnormal.
Optionally, the step of determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and determining whether the micro light emitting diode chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold includes:
acquiring a hypothetical spectrum vector as the reference spectrum vector, and calculating an included angle deviation value between the target spectrum vector and the reference spectrum vector;
if the included angle deviation value is smaller than a preset deviation lower limit value or larger than a preset deviation upper limit value, determining that the micron light-emitting diode chip is abnormal;
and if the included angle deviation value is greater than or equal to a preset deviation lower limit value and less than or equal to a preset deviation upper limit value, determining that the micron light-emitting diode chip is normal.
Optionally, after the step of determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and determining whether the micro light emitting diode chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold, the method further includes:
acquiring identification point information of the micrometer light-emitting diode chip judged to be abnormal;
and recording the position of the micron light-emitting diode chip according to the identification point information.
In addition, to achieve the above object, the present invention also provides an electronic device including: the system comprises a memory, a processor and a micron light emitting diode chip defect detection program stored on the memory and capable of running on the processor, wherein the micron light emitting diode chip defect detection program is configured to realize the steps of the micron light emitting diode chip defect detection method.
In addition, to achieve the above object, the present invention further provides a computer readable storage medium, wherein a micro led chip defect detection program is stored on the computer readable storage medium, and when being executed by a processor, the micro led chip defect detection program realizes the steps of the micro led chip defect detection method as described above.
The invention provides a method for detecting the defects of a micron light-emitting diode chip, which comprises the steps of obtaining spectral data of the micron light-emitting diode chip, and converting the spectral data into a spectral vector to be detected; determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter accords with a preset detection condition, taking the spectral vector to be detected as a target spectral vector; and determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the size relation between the second angle parameter and a preset parameter threshold value. Whether the spectral data represented by the spectral vector to be detected is background data or not is distinguished through the first angle parameter, the target spectral vector representing the sample to be detected can be screened out, the difference between the target spectral vector and the reference spectral vector is determined according to the second angle parameter between the target spectral vector and the reference spectral vector, the state of the micron light-emitting diode is judged, the detection process depends on the spectral data, the spectral data does not need to be drawn into a CIE horseshoe-shaped spectral contour line according to the CIE standard, the calculation process is simplified, and therefore the detection efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of an electronic device in a hardware operating environment according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating a method for detecting defects of a micro light emitting diode chip according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of a defect detection system according to an embodiment of the present invention;
FIG. 4 is a graph of the relationship between spectral angle, excitation purity and dominant wavelength for an embodiment of the present invention;
FIG. 5 is a schematic flowchart illustrating a second embodiment of a method for detecting defects in a micro light emitting diode chip according to the present invention;
FIG. 6 is a schematic diagram of another defect detection system according to an embodiment of the present invention;
fig. 7 is a schematic flow chart of a method for detecting defects of a micro led chip according to a third embodiment of the present invention.
Reference numerals
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electronic device in a hardware operating environment according to an embodiment of the present invention.
As shown in fig. 1, the electronic device may include: a processor 1001, such as a Central Processing Unit (CPU), a communication bus 1002, a user interface 1003, a network interface 1004, and a memory 1005. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a WIreless interface (e.g., a WIreless-FIdelity (WI-FI) interface). The Memory 1005 may be a Random Access Memory (RAM) Memory, or may be a Non-Volatile Memory (NVM), such as a disk Memory. The memory 1005 may alternatively be a storage device separate from the processor 1001.
Those skilled in the art will appreciate that the configuration shown in fig. 1 does not constitute a limitation of the electronic device and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.
As shown in fig. 1, a memory 1005, which is a storage medium, may include therein an operating system, a network communication module, a user interface module, and a micro light emitting diode chip defect detection program.
In the electronic device shown in fig. 1, the network interface 1004 is mainly used for data communication with other devices; the user interface 1003 is mainly used for data interaction with a user; the processor 1001 and the memory 1005 of the electronic device of the present invention may be disposed in the electronic device, and the electronic device calls the micro led chip defect detection program stored in the memory 1005 through the processor 1001 and executes the micro led chip defect detection method provided by the embodiment of the present invention.
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for detecting defects of a micro light emitting diode chip according to a first embodiment of the present invention. It should be noted that, although a logical order is shown in the flow chart, in some cases, the steps shown or described may be performed in an order different than that shown or described herein. In this embodiment, the method for detecting defects of a micro led chip includes:
s10, acquiring spectral data of a micron light-emitting diode chip, and converting the spectral data into a spectral vector to be measured;
the micron light emitting diode chip is a basic light emitting unit in a product adopting Micro-LED display technology. The Micro light emitting diode chip detected in this embodiment may be a PL (Photoluminescence) wafer-level Micro-LED, an EL (electroluminescence) wafer-level Micro-LED, or a panel-level Micro-LED. The wafer and the panel refer to substrate materials for bearing micron light-emitting diode chips. The micron light emitting diode chips generate response in a certain wavelength band, and the spectral data of each micron light emitting diode chip is a group of response values and wavelength data. The spectrum vector to be measured refers to a vector formed by response values.
Fig. 3 is a schematic structural diagram of a defect detection system used in this embodiment, in fig. 3, the control module 100 is in communication connection with the three-axis displacement platform 200, the three-axis displacement platform 200 includes two dimensions of translation motion and one-dimensional rotation in a plane, so as to achieve alignment and scanning detection after the sample 300 to be detected is placed, and the sample 300 to be detected may be a wafer carrying a micron light emitting diode chip. The control module 100 may be a personal computer or a desktop computer, and controls the translation and rotation of the three-axis displacement platform 200. The stroke of the triaxial displacement platform 200 can be selected to be larger than the size of the wafer in the sample 300 to be detected, the displacement precision is superior to the submicron level, and meanwhile, the triaxial displacement platform has higher movement speed so as to meet the requirement of wafer detection on a production line. The control module 100 is further communicatively connected to the spectrum collection module 400, and the defect detection system may further include a light generation module (not shown in fig. 3) for emitting a laser signal to the sample 300 to be detected, so as to illuminate the micro led chip in the sample 300 to be detected, and enable the micro led chip to generate the light signal 500 to be collected by the spectrum collection module 400. Based on the defect detection system shown in fig. 3, the control module 100 may acquire the spectral data through the spectrum collection module 400, and process the spectral data into the spectral vector to be detected. For convenience of description, the following description of the embodiments is made with a control module as an execution subject.
In a possible embodiment, the step of acquiring the spectral data of the micro-led chip may include:
step a, sending a first spectrum acquisition signal to a massive spectrum acquisition device, and controlling the massive spectrum acquisition device to acquire the spectrum data according to a preset first sampling interval;
the mass spectrum acquisition equipment refers to equipment which takes a hyperspectral camera as a spectrum acquisition main component and can also comprise other components, such as a charge coupled device camera. A mass spectrum acquisition device may perform the acquisition of spectral data as the spectrum acquisition module 400 in fig. 3. In the detection process, the control module sends a first spectrum acquisition signal to the massive spectrum acquisition equipment, the first spectrum acquisition signal can contain sampling information, and the massive spectrum acquisition equipment acquires spectrum data according to a preset first sampling interval in the first spectrum acquisition signal. The preset first sampling interval refers to an interval between each wavelength in the sampling frequency band, and may be set according to actual conditions and characteristics of the acquisition device, for example, the preset first sampling interval may be set to 1nm.
And b, receiving a spectral imaging frame sent by the massive spectral acquisition equipment, wherein the spectral imaging frame comprises spectral data of a plurality of micron light-emitting diode chips.
The spectral imaging frame refers to data obtained by collecting optical signals generated by a micron light-emitting diode chip by a hyperspectral camera. It can be understood that the imaging resolution of the hyperspectral camera may be smaller than the size of the micron light emitting diode chip, so that the optical signals of a plurality of micron light emitting diode chips may be collected simultaneously, that is, the spectral imaging frame includes the spectral data of a plurality of micron light emitting diode chips. And the control module receives the spectral imaging frames acquired by the massive spectral acquisition equipment and performs subsequent processing on the spectral data.
In a possible embodiment, the step of converting the spectral data into a spectral vector to be measured may include:
step c, determining the detection wavelength in the spectral data and the spectral response value corresponding to the detection wavelength;
and d, generating the spectrum vector to be detected according to the spectrum response value.
The detection wavelength refers to the wavelength used in the sampling process, and the micron light-emitting diode chip has a corresponding spectral response value at the detection wavelength. For example, for wavelength
Spectral response value of
The spectral vector to be measured can be expressed as
. Under the condition of fixing the detection frequency band, the smaller the sampling interval is, the more the number of the obtained spectral response values is, and the higher the dimensionality of the generated spectral vector to be detected is.
Step S20, determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter meets a preset detection condition, taking the spectral vector to be detected as a target spectral vector;
the background spectrum vector is a vector obtained from collected spectrum data of a region where the non-micron light-emitting diode chip is located, taking the wafer bearing micron light-emitting diode chip as an example, and the background spectrum vector is a vector corresponding to a region of the wafer which is not covered by the micron light-emitting diode chip. It can be understood that the micron light emitting diode chips have a certain gap when arranged on the wafer, and since the resolution of the hyperspectral camera is smaller than the size of the micron light emitting diode chips, a single pixel of the spectral imaging frame cannot contain the complete micron light emitting diode chips, and the pixel and the spectral vector have a corresponding relationship, that is, the spectral vector to be measured corresponding to the pixel is a background vector.
The first angle parameter refers to a parameter obtained from an angular relationship. The embodiment of the first angle parameter is not limited, for example, the first angle parameter may be an included angle between the spectral vector to be detected and the background spectral vector, and the preset detection condition may be that the included angle is greater than a first included angle threshold, which indicates that the similarity between the spectral vector to be detected and the background spectral vector is low, the spectral vector to be detected is a target spectral vector to be detected, and if the included angle is not greater than the first included angle threshold, which indicates that the similarity between the spectral vector to be detected and the background spectral vector is high, the region corresponding to the spectral vector to be detected is a background.
In a feasible implementation manner, the step of determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter meets a preset detection condition, taking the spectral vector to be detected as a target spectral vector may include:
step e, calculating a cosine value of a first included angle between the spectrum vector to be measured and the background spectrum vector;
in general, two points may define a vector having two dimensions, and as the number of points that make up the vector increases, the vector dimension increases. The spectral vector to be measured and the background spectral vector both belong to high-dimensional vectors, and the included angle between the spectral vector to be measured and the background spectral vector can be regarded as a virtual angle, which is not of practical significance. The formula for calculating the cosine value of the first included angle can be given as the following formula 1.
Equation 1:
。
wherein the content of the first and second substances,
the cosine value of the first included angle is represented,
a vector representing the spectrum of the background light,
representing the spectral vector to be measured.
The included angle between the spectrum vector to be measured and the background spectrum vector can be calculated by using the following formula 2.
Equation 2:
。
wherein the content of the first and second substances,
and representing the included angle between the spectral vector to be measured and the background spectral vector.
And f, if the cosine value of the first included angle is smaller than a preset first cosine value threshold value, determining the spectral vector to be detected as a target spectral vector.
The spectral vector to be measured and the background spectral vector are both normal vectors, the value of the cosine value of the first included angle is 0-1, the closer the cosine value of the first included angle is to 1, the closer the included angle between the spectral vector to be measured and the background spectral vector is to 0, the higher the spectral matching degree between the spectral vector to be measured and the background spectral vector is, and the higher the possibility that the region corresponding to the spectral vector to be measured is the background is. When the cosine value of the first included angle is smaller than the threshold value of the first cosine value, the spectrum vector to be measured and the background spectrum vector are considered to be dissimilar, and the spectrum vector to be measured can be determined as the target spectrum vector.
And S30, determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the size relationship between the second angle parameter and a preset parameter threshold value.
The second angle variable is also a variable obtained from the angular relationship. The embodiment of the second angle parameter is not limited in this embodiment, for example, the second angle parameter may be an included angle between the target spectrum vector and the reference spectrum vector, and the preset parameter threshold may be a second included angle threshold, and if the included angle is greater than the second included angle threshold, it indicates that the similarity between the target spectrum vector and the reference spectrum vector is low, and the micrometer light emitting diode corresponding to the target spectrum vector is abnormal. If the included angle is not larger than the second included angle threshold value, the similarity between the target spectrum vector and the reference spectrum vector is high, and the micron light-emitting diode corresponding to the target spectrum vector is normal.
In a possible embodiment, the step of determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and determining whether the micro led chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold may include:
step g, acquiring a spectrum vector of a standard chip as the reference spectrum vector, and calculating a cosine value of a second included angle between the target spectrum vector and the reference spectrum vector;
the standard chip is a micron light-emitting diode chip without defects, the dominant wavelength, the color purity and the appearance of the standard chip all meet standard conditions, and the micron light-emitting diode chip which does not meet any one standard condition of the dominant wavelength, the color purity and the appearance is a defective chip. The spectrum vector of the standard chip can be detected, in a feasible implementation manner, the spectrum data of a plurality of qualified micron light-emitting diode chips are counted, and the average value is used as the spectrum data of the standard chip. The formula for calculating the cosine value of the second included angle may be as follows in formula 3.
Equation 3:
。
wherein the content of the first and second substances,
representing the cosine value of the second included angle,
representing the spectral vector of a standard chip.
The angle between the target spectral vector and the spectral vector of the standard chip can be calculated using the following equation 4.
Equation 4:
。
wherein the content of the first and second substances,
representing the angle between the target spectral vector and the spectral vector of the standard chip.
H, if the cosine value of the second included angle is larger than a preset second cosine value threshold value, determining that the micron light-emitting diode chip is normal;
the spectral vector to be measured and the background spectral vector are both normal vectors, the value of the cosine value of the second included angle is 0-1, the closer the cosine value of the second included angle is to 1, the closer the included angle between the target spectral vector and the reference spectral vector is to 0, the higher the spectral matching degree between the target spectral vector and the reference spectral vector is, and the more similar the micron light-emitting diode chip corresponding to the target spectral vector is to the standard chip. When the cosine value of the second included angle is greater than the threshold value of the second cosine value, the micron light-emitting diode chip corresponding to the target spectral vector can be considered as a normal chip.
And i, if the cosine value of the second included angle is smaller than or equal to a preset second cosine value threshold value, determining that the micron light-emitting diode chip is abnormal.
And under the condition that the cosine value of the second included angle is smaller than or equal to the second cosine value threshold value, the spectrum matching degree between the target spectrum vector and the reference spectrum vector is low, which indicates that the degree of similarity between the micron light-emitting diode chip corresponding to the target spectrum vector and the standard chip is low, and the micron light-emitting diode chip corresponding to the target spectrum vector can be considered as an abnormal chip.
The micron light-emitting diode chip defect detection adopts the technical idea of spectrum angle matching, namely, the background and the target are firstly distinguished in a spectrum angle matching mode, and then whether the target is abnormal or not is judged. In order to verify the feasibility of the above-mentioned spectrum angle matching manner, the spectrum angle between the luminescence spectrum of the micro-led chip and the reference spectrum vector can be calculated, and the relationship among the spectrum angle, the color purity and the dominant wavelength can be plotted, as shown in fig. 4. In FIG. 4, SA represents Spectral Angle, dominant wavelength represents Dominant wavelength, and Colorimetric purity represents color purity. It can be seen that the relation curve of the spectral angle, the dominant wavelength and the color purity can be basically fitted into a plane in a three-dimensional coordinate space, and a certain functional relation is shown among the three, so that the feasibility of the spectral angle matching mode is shown.
In the embodiment, the spectral data of the micron light-emitting diode chip is obtained and converted into a spectral vector to be measured; determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter accords with a preset detection condition, taking the spectral vector to be detected as a target spectral vector; and determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the size relation between the second angle parameter and a preset parameter threshold value. Whether the spectral data represented by the spectral vector to be detected is background data or not is distinguished through the first angle parameter, the target spectral vector representing the sample to be detected can be screened out, the difference between the target spectral vector and the reference spectral vector is determined according to the second angle parameter between the target spectral vector and the reference spectral vector, the state of the micron light emitting diode is judged, the detection process depends on the spectral data, the spectral data does not need to be drawn into a CIE horseshoe-shaped spectral contour line according to the CIE standard, the calculation process is simplified, and therefore the detection efficiency is improved.
Further, in the second embodiment of the method for detecting defects of a micro-led chip according to the present invention, with reference to fig. 5, the method includes:
s11, sending a second spectrum acquisition signal to a spectrometer, and controlling the spectrometer to acquire the spectrum data according to a preset second sampling interval;
fig. 6 is a schematic structural diagram of another defect detection system used in this embodiment, and in fig. 6, a spectrum collection module 400 is composed of a spectrometer 401, an optical path coupling unit 402, and a microscope unit 403. The optical signal 500 emitted by the sample 300 to be measured reaches the optical path coupling unit 402 through the microscope unit 403, and reaches the spectrometer 401 after coupling, and the spectrometer 401 collects the optical signal 500 to obtain a second spectral imaging frame. An industrial camera (not shown in fig. 6) used in cooperation with the spectrometer 401 may be further included in the defect detection system, the industrial camera is used for imaging, and the position of the micro-light emitting diode to be measured can be determined through the industrial camera and the microscope unit 403, so as to distinguish the target from the background. The spectrometer 401 can directly collect spectral data at the location of the target.
In a laboratory research setting, the requirements for detection accuracy are generally higher than the detection speed. The control module 100 sends a second spectrum collection signal to the spectrometer 401, and the spectrometer 401 samples according to a preset second sampling interval in the second spectrum collection signal. The preset second sampling interval is smaller than the preset first acquisition interval, for example, the preset second sampling interval may be 0.1nm.
And S12, receiving the spectrum data sent by the spectrometer.
The spectrometer can acquire the spectrum data of a single micron light-emitting diode chip during detection every time, and the state of each micron light-emitting diode chip can be analyzed in more detail by adopting the detection mode of the spectrometer under the condition that the sampling interval is reduced, so that the spectrometer is suitable for researching the scenes with low requirements on detection speed and high requirements on detection precision in laboratories.
In this embodiment, the spectral data of micron emitting diode chip is gathered to the spectrometer, and the sampling interval is littleer, and spectral data's precision is higher, can obtain the spectral vector of higher dimensionality to the defect detection precision is higher.
Further, in a third embodiment of the method for detecting defects of a micro-led chip according to the present invention, with reference to fig. 7, the method includes:
step S31, acquiring a hypothetical spectrum vector as the reference spectrum vector, and calculating an included angle deviation value between the target spectrum vector and the reference spectrum vector;
the assumed spectral vector refers to a vector in which the spectral response values of the assumed spectral vector at all wavelengths are 1, and the assumed light isThe spectral vector can be expressed as
. The assumed spectrum vector is not a vector converted from actually measured spectrum data, so that after the target is determined, the included angles between the plurality of target spectrum vectors and the assumed spectrum vector and the statistical values of the included angles can be calculated, the statistical values can be average values, and the statistical values are used as reference bases of the parameter threshold values. And the difference value between the included angle between each target spectrum vector and the assumed spectrum vector and the statistic value is an included angle deviation value. The cosine value of the angle between the target spectral vector and the assumed spectral vector can be calculated using the following equation 5.
Equation 5:
。
wherein the content of the first and second substances,
representing the cosine of the angle between the target spectral vector and the assumed spectral vector,
representing the ith target spectral vector.
The angle between the target spectral vector and the assumed spectral vector can be calculated using the following equation 6.
Equation 6:
。
wherein the content of the first and second substances,
representing the angle between the target spectral vector and the assumed spectral vector.
Step S32, if the included angle deviation value is smaller than a preset deviation lower limit value or larger than a preset deviation upper limit value, determining that the micron light-emitting diode chip is abnormal;
the deviation lower limit value and the deviation upper limit value may be determined according to a statistical value of the included angle, for example, an acceptable error value is determined by taking the statistical value of the included angle as an intermediate value, the intermediate value and the acceptable error value are subtracted to obtain a deviation lower limit value, the intermediate value and the acceptable error value are added to obtain a deviation upper limit value, and the deviation upper limit value and the deviation lower limit value may form a deviation threshold interval. If the included angle deviation value is smaller than the preset deviation lower limit value or larger than the preset deviation upper limit value, the included angle deviation value is not in the deviation threshold value interval, the deviation degree of the target spectrum vector is larger, and the corresponding pixel position is an abnormal micron light emitting diode.
And step S33, if the included angle deviation value is greater than or equal to a preset deviation lower limit value and less than or equal to a preset deviation upper limit value, determining that the micron light-emitting diode chip is normal.
If the included angle deviation value is greater than or equal to the preset deviation lower limit value and less than or equal to the preset deviation upper limit value, the included angle deviation value indicates that the deviation degree of the target spectrum vector is small within the deviation threshold value interval, and the corresponding pixel position is a normal micron light emitting diode.
After judging whether the micron light-emitting diode chip is abnormal or not through the mode, the identification point information of the micron light-emitting diode chip judged to be abnormal can be obtained, and the position of the micron light-emitting diode chip is recorded according to the identification point information. The defect detection system can further comprise a charge coupled device camera, the charge coupled device camera can collect optical signals emitted by the micron light emitting diode to obtain an image data frame, and the image data frame comprises identification point information. The identification point information can distinguish the micron light emitting diodes in the image data frame and can also identify the positions of the micron light emitting diodes. And after the abnormal micrometer light emitting diode is detected, the position of the abnormal micrometer light emitting diode is recorded, so that the abnormal micrometer light emitting diode can be conveniently subjected to subsequent treatment.
In this embodiment, the assumed spectral vector is directly used as the reference spectral vector, and the spectral data of the standard chip does not need to be detected in advance, so that the defect detection efficiency can be further improved.
An embodiment of the present invention further provides an electronic device, where the electronic device includes: the system comprises a memory, a processor and a micron light emitting diode chip defect detection program stored on the memory and capable of running on the processor, wherein the micron light emitting diode chip defect detection program is configured to realize the steps of the micron light emitting diode chip defect detection method. For specific implementation of the electronic device in the embodiments of the present invention, reference is made to the above embodiments of the method for detecting defects of a micro light emitting diode, and details are not repeated here.
An embodiment of the present invention further provides a computer-readable storage medium, where a micrometer led chip defect detection program is stored on the computer-readable storage medium, and when the micrometer led chip defect detection program is executed by a processor, the steps of the micrometer led chip defect detection method described above are implemented. For specific implementation of the computer scale storage medium according to the embodiment of the present invention, reference is made to the above embodiments of the method for detecting defects of a micro light emitting diode, and details are not repeated herein.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the description of the foregoing embodiments, it is clear to those skilled in the art that the method of the foregoing embodiments may be implemented by software plus a necessary general hardware platform, and certainly may also be implemented by hardware, but in many cases, the former is a better implementation. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium (e.g., ROM/RAM, magnetic disk, optical disk) as described above and includes instructions for enabling a terminal device (e.g., a mobile phone, a computer, a server, or a network device) to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (8)
1. A method for detecting the defects of a micron light-emitting diode chip is characterized by comprising the following steps:
acquiring spectral data of a micron light-emitting diode chip, and converting the spectral data into a spectral vector to be measured;
determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter accords with a preset detection condition, taking the spectral vector to be detected as a target spectral vector;
determining a second angle parameter between the target spectrum vector and a preset reference spectrum vector, and judging whether the micron light-emitting diode chip is abnormal or not according to the magnitude relation between the second angle parameter and a preset parameter threshold value;
the step of acquiring the spectral data of the micron light-emitting diode chip comprises the following steps:
sending a second spectrum acquisition signal to a spectrometer, and controlling the spectrometer to acquire the spectrum data according to a preset second sampling interval;
and receiving the spectral data sent by the spectrometer, wherein the spectrometer can acquire the spectral data of a single micron light-emitting diode chip at each detection.
2. The method for detecting defects of a micro-scale light-emitting diode chip as claimed in claim 1, wherein the step of converting the spectral data into a spectral vector to be measured comprises:
determining a detection wavelength in the spectrum data and a spectrum response value corresponding to the detection wavelength;
and generating the spectrum vector to be detected according to the spectrum response value.
3. The method for detecting defects of a micro-led chip as claimed in claim 1, wherein the step of determining a first angle parameter between the spectral vector to be detected and a preset background spectral vector, and if the first angle parameter meets a preset detection condition, the step of using the spectral vector to be detected as a target spectral vector comprises:
calculating a cosine value of a first included angle between the spectrum vector to be measured and the background spectrum vector;
and if the cosine value of the first included angle is smaller than a preset first cosine value threshold value, determining the spectral vector to be detected as a target spectral vector.
4. The method for detecting defects of a micro led chip as claimed in claim 1, wherein the step of determining a second angle parameter between the target spectral vector and a preset reference spectral vector, and determining whether the micro led chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold comprises:
acquiring a spectrum vector of a standard chip as the reference spectrum vector, and calculating a cosine value of a second included angle between the target spectrum vector and the reference spectrum vector;
if the cosine value of the second included angle is larger than a preset second cosine value threshold value, determining that the micron light-emitting diode chip is normal;
and if the cosine value of the second included angle is smaller than or equal to a preset second cosine value threshold value, determining that the micron light-emitting diode chip is abnormal.
5. The method for detecting defects of a micro led chip as claimed in claim 1, wherein the step of determining a second angle parameter between the target spectral vector and a preset reference spectral vector, and determining whether the micro led chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold comprises:
acquiring a hypothetical spectrum vector as the reference spectrum vector, and calculating an included angle deviation value between the target spectrum vector and the reference spectrum vector;
if the included angle deviation value is smaller than a preset deviation lower limit value or larger than a preset deviation upper limit value, determining that the micron light-emitting diode chip is abnormal;
and if the included angle deviation value is greater than or equal to a preset deviation lower limit value and less than or equal to a preset deviation upper limit value, determining that the micron light-emitting diode chip is normal.
6. The method for detecting defects of a micro led chip as claimed in claim 1, wherein after the step of determining a second angle parameter between the target spectral vector and a preset reference spectral vector, and determining whether the micro led chip is abnormal according to a magnitude relationship between the second angle parameter and a preset parameter threshold, the method further comprises:
acquiring identification point information of the micrometer light-emitting diode chip judged to be abnormal;
and recording the position of the micron light-emitting diode chip according to the identification point information.
7. An electronic device, characterized in that the electronic device comprises: a memory, a processor, and a micro-led chip defect detection program stored on the memory and executable on the processor, the micro-led chip defect detection program configured to implement the steps of the micro-led chip defect detection method of any one of claims 1 to 6.
8. A computer-readable storage medium, wherein the computer-readable storage medium stores thereon a micro-led chip defect detection program, and when the micro-led chip defect detection program is executed by a processor, the micro-led chip defect detection program implements the steps of the micro-led chip defect detection method according to any one of claims 1 to 6.
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