CN115557462A - In-situ heating chip with air pressure sensing function and manufacturing method thereof - Google Patents

In-situ heating chip with air pressure sensing function and manufacturing method thereof Download PDF

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Publication number
CN115557462A
CN115557462A CN202211221695.7A CN202211221695A CN115557462A CN 115557462 A CN115557462 A CN 115557462A CN 202211221695 A CN202211221695 A CN 202211221695A CN 115557462 A CN115557462 A CN 115557462A
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chip
substrate
top plate
dielectric layer
silicon substrate
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贺龙兵
卢子煜
谢君
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Southeast University
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Southeast University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0083—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to an in-situ heating chip with an air pressure sensing function and a manufacturing method thereof, wherein the in-situ heating chip comprises a substrate chip and a top plate chip, and the substrate chip comprises: the device comprises a silicon substrate, dielectric layers deposited on the upper surface and the lower surface of the silicon substrate, a contact electrode, a heating electrode, a capacitance plate and a support column deposited on the dielectric layer on the upper surface, an observation window positioned in the center of the heating electrode, and a hollow area etched from the lower part of the substrate, wherein the hollow area covers the observation window; the top plate chip includes: the device comprises a silicon substrate, dielectric layers deposited on the upper surface and the lower surface of the silicon substrate, a capacitor plate, a contact electrode and a support column deposited on the dielectric layer on the upper surface, and a hollow-out area etched from the lower part of the substrate, wherein the hollow-out area covers an observation window. And placing a sample for observation in an observation window area of the substrate chip according to requirements. The top plate and the substrate are aligned and contacted according to the patterns of the supporting columns, are bonded and packaged, and are placed into the matched transmission electron microscope sample rod, so that the change rule of the pressure of the gas in the sealed cavity under different heating conditions can be measured.

Description

In-situ heating chip with air pressure sensing function and manufacturing method thereof
Technical Field
The invention designs an in-situ heating chip with an air pressure sensing function, and belongs to the field of electron microscopy, micro-nano processing and sensors.
Background
Transmission Electron Microscopy (TEM) is a characterization and analysis tool that uses a high-energy electron beam accelerated at high pressure as an imaging light source to image a sample with the electron beam penetrating through the sample. The transmission electron microscope is an important analysis technical method for recognizing the structure and the components of materials, and is one of the advanced devices essential for researching the structural physical properties of nano materials and devices at present. With the continuous and intensive research on materials, the need for taking static photographs of the material structure by only using a transmission electron microscope has not been met, and researchers have attempted to develop in-situ transmission electron microscopy techniques to attempt to observe the dynamic growth or reaction process of a material sample at the atomic scale.
Since the chamber of the transmission electron microscope is usually required to operate in a high vacuum environment (the vacuum degree is usually less than 10) - 4 Pa), how to controllably introduce a gaseous reaction environment in a transmission electron microscope is a significant challenge in the development of current in-situ transmission electron microscopy technology. The current technical path mainly comprises two paths, one is to change an electron microscope cavity to introduce a differential pumping structure to realize atmosphere introduction, namely an Environmental Transmission Electron Microscope (ETEM); the other is to construct a complex sample rod system to introduce gas atmosphere from closed pipes isolated from the inside and the outside (represented by two gas rod products of Protocochips, USA and DENSolutions, netherlands). The former solution generally preserves good spatial resolution, but is expensive in equipment and can introduce a rather limited gas pressure (typically less than the order of a hundred pa), and is therefore not suitable for the actual use of the constructed device. The latter solution can normally achieve an environment of between hectopa and 1 atmosphere, but due to the multiplexing of the gas path, the continuous flow of the gas flow and the complex sealing structure, serious pollution problems and leakage risks are often present in use. Aiming at the problem, a chip with low cost and convenient use is designed and developed, and the chip has obvious application value in constructing a gas environment in a transmission electron microscope. Meanwhile, the realization of real-time measurement and tracking of the gas pressure in the chip is also of great significance.
The capacitive pressure sensor is a pressure sensor which utilizes a capacitance sensitive element to convert the measured pressure into an electrical quantity which has a certain relation with the measured pressure and outputs the electrical quantity, and has the characteristics of low input capacity, high dynamic response, small natural effect and good environmental adaptation. The capacitive pressure sensor is built in the chip, so that the gas pressure can be measured in a sealed cavity in real time, efficiently and accurately. MEMS processing technology is one of micro-processing technologies, some of which are compatible with integrated circuit manufacturing processes, and has been widely used for processing various devices. MEMS processing techniques can be divided into bulk micromachining and surface micromachining techniques. The bulk micromachining is a technique of processing a substrate of a material by mainly using anisotropic chemical etching and the like, and the surface micromachining is a technique of forming a thin film on the surface of the substrate of the material and processing the thin film, and is used for obtaining a three-dimensional structure.
The in-situ chip with the closed microcavity, the heating electrode and the capacitance sensor is processed and manufactured through an MEMS technology, and the chip can be matched with a sample rod of a transmission electron microscope to be used, so that the characterization analysis of a sample under the working conditions of heat, electricity and atmosphere is realized, and the method has important technical significance, and is beneficial to the cognition of the evolution process of material structures under different temperatures and atmospheres and the establishment of the corresponding relation between the properties of the materials and the temperature/pressure intensity at atomic scale. In general, to realize the above functions, the corresponding chip needs to satisfy the following conditions: (1) A heating zone for providing heating conditions to the sample material. (2) The film thickness at the window of the sealed chamber needs to meet the requirements for high resolution imaging by transmission electron microscopy. (3) Having a relatively closed microcavity can be used to restrict gas flow. (4) The two corresponding capacitive plates are used for measuring capacitance change caused by deformation of the observation window area caused by air pressure. (5) The sample rod is matched to externally connect a port for controlling the measuring circuit.
The invention can realize that the pressure change in the cavity is measured while the sample is heated in the sealed cavity, so as to better control the environment in the sealed cavity and carry out in-situ observation; in addition, the pressure change of different gases in the sealed cavity under the heating condition can be measured, and the method has high application value.
Disclosure of Invention
The technical problem is as follows: the invention aims to provide an in-situ heating chip with an air pressure sensing function and a manufacturing method thereof, wherein the closed micro-cavity structure prepared based on an MEMS (micro electro mechanical System) process is provided with a heating zone, so that heating and other operations are realized in a sealed cavity; in addition, the pressure change condition can be measured when different gases are introduced into the sealed cavity.
The technical scheme is as follows: in order to achieve the purpose, the in-situ heating chip with the air pressure sensing function adopts the following technical scheme:
the chip comprises a substrate chip and a top plate chip;
the substrate chip comprises a first silicon substrate, a first lower surface dielectric layer constructed on the lower surface of the first silicon substrate, and a first upper surface dielectric layer constructed on the upper surface of the first silicon substrate; a substrate chip contact electrode, a substrate chip capacitor plate, a substrate chip heating electrode, a substrate chip support column and a substrate chip isolation layer which are sequentially built on the first upper surface dielectric layer; a first hollow-out area penetrating through the first silicon substrate and the first lower surface dielectric layer; taking the center of the substrate heating chip as an observation window;
the top plate chip comprises a second silicon substrate, a second lower surface dielectric layer constructed on the lower surface of the second silicon substrate, and a second upper surface dielectric layer constructed on the upper surface of the second silicon substrate; a top plate chip capacitor plate constructed on the second upper surface dielectric layer; a top plate chip contact electrode, a top plate chip support column and a top plate chip isolation layer which are sequentially built on the second upper surface dielectric layer; the second hollow area penetrates through the second silicon substrate and the second lower surface dielectric layer;
the upper surfaces of the substrate chip and the top plate chip are oppositely arranged, so that the top plate chip supporting columns and the substrate chip supporting columns are aligned, contacted and packaged to form a sealed cavity.
The capacitor plate of the substrate chip and the capacitor plate of the top plate chip adopt interdigital structures, and the capacitance value of the capacitor plates is greater than 0.1pF at room temperature.
The substrate chip capacitor plate and the top plate chip capacitor plate form a capacitive electrode pair by utilizing the substrate chip capacitor plate and the top plate chip capacitor plate, and the capacitive electrode pair is used for detecting the air pressure change in the sealing cavity.
The substrate chip heating electrode is used for controlling the internal temperature of the sealing cavity, and the appearance of a sample inside the observation window is changed through a transmission electron microscope.
The substrate chip isolation layer and the top plate chip isolation layer are oppositely adhered to form an isolation belt with a slit, so that pollution of sample sublimation to a capacitor plate is reduced, and the use stability of the chip is improved.
The first lower surface dielectric layer, the first upper surface dielectric layer, the second lower surface dielectric layer and the second upper surface dielectric layer are made of insulating materials such as silicon nitride and the like, and the thickness of the dielectric layer is required to be 5 nm-50 nm so as to meet the thickness requirement of an observation window.
The substrate chip contact electrode, the substrate chip heating electrode, the substrate chip capacitor plate, the substrate chip support column, the top plate chip contact electrode, the top plate chip capacitor plate, the top plate chip support column, the substrate chip isolation layer and the top plate chip isolation layer are made of gold and platinum metal materials, and the thickness of the substrate chip contact electrode, the substrate chip heating electrode, the substrate chip capacitor plate, the substrate chip support column, the substrate chip isolation layer and the top plate chip isolation layer is 150 nm-250 nm.
The thickness of the top plate chip capacitor plate is smaller than that of the top plate chip contact electrode, and the top plate chip capacitor plate is used for reserving a space between the substrate chip capacitor plate and the top plate chip capacitor plate to form the capacitive air pressure sensor.
The adhesive material is epoxy resin, silver adhesive, ITO, indium or ultraviolet curing adhesive.
The manufacturing method of the in-situ heating chip with the air pressure sensing function comprises the following steps:
step 1, preparing a substrate chip: forming a first upper surface dielectric layer and a first lower surface dielectric layer on the upper surface and the lower surface of the first silicon substrate; forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support column and a substrate chip isolation layer on the first upper surface dielectric layer; forming a first through hollow area on the first silicon substrate and the first lower surface medium layer;
step 2, preparing a top plate chip: forming a second upper surface dielectric layer and a second lower surface dielectric layer on the upper surface and the lower surface of the second silicon substrate; forming a top plate chip capacitor plate on the second upper surface dielectric layer; forming a top plate chip contact electrode, a top plate chip support pillar and a top plate chip isolation layer on the second upper surface dielectric layer; forming a second penetrating hollow-out area on the second silicon substrate and the second lower surface dielectric layer;
the method comprises the steps of firstly forming a top plate chip contact electrode, a top plate chip capacitor polar plate, a top plate chip support column and a top plate chip isolation layer by using a one-time metal stripping process, and thickening the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer by using a one-time metal stripping process so as to achieve the effect of layering with the top plate chip capacitor polar plate.
Step 3, placing a sample to be tested in an observation window area of the substrate chip according to experiment requirements;
and the upper surfaces of the substrate chip and the top plate chip are opposite, the substrate chip supporting columns are aligned and contacted with the top plate chip supporting columns, and the junction of the substrate chip and the top plate chip is coated with adhesive for bonding and closing.
Has the advantages that: the invention provides an in-situ heating chip with an air pressure sensing function and a manufacturing method thereof, wherein a micro-cavity for reaction is provided in a transmission electron microscope, and a heating area and a capacitance sensor are provided. Utilize above-mentioned structure to heat in the sealed chamber and can adjust and control the temperature through measuring observation window district capacitance variation, greatly improved temperature control ability, can realize the atomic level real-time observation of such complicated reaction process of CVD simultaneously in transmission electron microscope, through the observation to its structure evolution, for the reaction mechanism who studies this process provides powerful support, and then can effectively regulate and control nanostructure reaction and growth, have important meaning to electron microscopy research.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an in-situ heating chip with an air pressure sensing function according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a substrate chip and a top board chip according to an embodiment of the present invention.
Fig. 3 is a top view of a top plate chip according to an embodiment of the invention.
Fig. 4 is a top view of a substrate chip according to an embodiment of the invention.
Fig. 5 is a partially enlarged view of a capacitor plate of a top plate chip according to an embodiment of the present invention.
Fig. 6 is a partially enlarged view of a heating electrode and a capacitor plate in an observation window region of a substrate chip according to an embodiment of the present invention.
The figure shows that: the chip-on-insulator substrate comprises a first silicon substrate 1, a first lower surface dielectric layer 2, a first upper surface dielectric layer 3, a substrate chip contact electrode 4, a substrate chip heating electrode 5, a substrate chip capacitor plate 6, a substrate chip support pillar 7, a first hollow-out area 8, a second silicon substrate 9, a second lower surface dielectric layer 10, a second upper surface dielectric layer 11, a top plate chip contact electrode 12, a top plate chip capacitor plate 13, a top plate chip support pillar 14, a second hollow-out area 15, an observation window 16, an adhesive 17, a substrate chip isolation layer 18 and a top plate chip isolation layer 19.
The specific implementation mode is as follows:
the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the chip includes a substrate chip and a top plate chip.
The substrate chip comprises a first silicon substrate, a first silicon substrate lower surface dielectric layer constructed on the lower surface of the first silicon substrate, and a first silicon substrate upper surface dielectric layer constructed on the upper surface of the first silicon substrate; a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support column and a substrate chip isolation layer which are built on a dielectric layer on the upper surface of a first silicon substrate; and the first hollow-out area penetrates through the first silicon substrate and the dielectric layer on the lower surface of the first silicon substrate, and covers the observation window.
The top plate chip comprises a second silicon substrate, a second silicon substrate lower surface dielectric layer constructed on the lower surface of the second silicon substrate, and a second silicon substrate upper surface dielectric layer constructed on the upper surface of the second silicon substrate; a top plate chip capacitor polar plate is constructed on the dielectric layer on the upper surface of the second silicon substrate; a top plate chip contact electrode and a top plate chip support pillar which are built on the dielectric layer on the upper surface of the second silicon substrate; a top plate chip contact electrode, a top plate chip support column and a top plate chip isolation layer which are built on the basis of the electrode and the support column; and the second hollow-out area penetrates through the second silicon substrate and the dielectric layer on the lower surface of the second silicon substrate, and covers the observation window.
As shown in fig. 2, the first hollow-out region and the second hollow-out region correspond to each other in a direction perpendicular to the surface of the first silicon substrate, and cover the observation window region between the heating electrodes.
The top plate chip is contacted with the substrate chip under the condition that the alignment of the substrate chip supporting columns and the top plate chip supporting columns is ensured, and bonding closing is carried out by using an adhesive.
The dielectric layer on the lower surface of the first silicon substrate, the dielectric layer on the upper surface of the first silicon substrate, the dielectric layer on the lower surface of the second silicon substrate and the dielectric layer on the upper surface of the second silicon substrate are silicon oxide SiO 2 Silicon nitride Si 3 N 4 Or aluminum oxide Al 2 O 3 The thickness of the dielectric layer of any one of the insulating materials can be 5 nm-50 nm.
The substrate chip contact electrode, the substrate chip heating electrode, the substrate chip capacitor polar plate, the substrate chip support column, the top plate chip contact electrode, the top plate chip capacitor polar plate, the top plate chip support column, the substrate chip isolation layer and the top plate chip isolation layer are made of metal materials such as gold and platinum, and the thickness of the substrate chip contact electrode, the substrate chip heating electrode, the substrate chip capacitor polar plate, the top plate chip support column, the substrate chip isolation layer and the top plate chip isolation layer is 150 nm-250 nm.
The top plate chip contact electrode, the top plate chip capacitor polar plate, the top plate chip support column and the top plate chip isolation layer are formed by a metal stripping process, and then the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer are thickened by the metal stripping process to achieve the effect of layering with the top plate chip capacitor polar plate.
The adhesive material is epoxy resin, silver adhesive, ITO, indium or ultraviolet curing adhesive.
The method for manufacturing the in-situ heating chip with the air pressure sensing function comprises the following steps:
for the substrate chip, providing a first silicon substrate, and forming a first silicon substrate upper surface dielectric layer and a first silicon substrate lower surface dielectric layer on the upper surface and the lower surface of the first silicon substrate; forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support column and a substrate chip isolation layer on a dielectric layer on the upper surface of a first silicon substrate; forming a first hollow area penetrating through the dielectric layer on the lower surface of the first silicon substrate and the first silicon substrate on the lower surface of the first silicon substrate;
for the top plate chip, providing a second silicon substrate, and forming a second silicon substrate upper surface dielectric layer and a second silicon substrate lower surface dielectric layer on the upper surface and the lower surface of the second silicon substrate; forming a top plate chip capacitor plate on the dielectric layer on the upper surface of the second silicon substrate; forming a top plate chip contact electrode, a top plate chip support pillar and a top plate chip isolation layer on the medium layer on the upper surface of the second silicon substrate; forming a top plate chip contact electrode, a top plate chip support pillar and a top plate chip isolation layer on the basis of the original electrode and the support pillar; forming a second hollow-out area which penetrates through the medium layer on the lower surface of the second silicon substrate and the second silicon substrate on the lower surface of the second silicon substrate;
placing a sample to be tested in an observation window area of a substrate chip according to experiment requirements;
and (3) enabling the upper surfaces of the substrate chip and the top plate chip to be opposite, aligning and contacting the substrate chip supporting columns and the top plate chip supporting columns, and coating an adhesive at the junction of the substrate chip and the top plate chip.
In the following, the material composition, the size range and the material composition of the adhesive of each portion of the substrate chip and the top board chip are illustrated, and it should be noted that the following are only specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that may be made by one skilled in the art within the technical scope of the present invention should be included in the scope of the present invention, and therefore, the scope of the present invention should be determined by the scope of the appended claims.
Example 1
An in-situ heating chip with an air pressure sensing function, as shown in fig. 1, includes a substrate chip and a top plate chip.
The substrate chip comprises a first silicon substrate, a first silicon substrate lower surface dielectric layer constructed on the lower surface of the first silicon substrate, and a first silicon substrate upper surface dielectric layer constructed on the upper surface of the first silicon substrate, wherein the dielectric layer is made of silicon nitride and has the thickness of 100nm; a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor polar plate, a substrate chip support column and a substrate chip isolation layer which are constructed on a dielectric layer on the upper surface of a first silicon substrate, wherein the material is gold, and the thickness is 100nm; taking the center of the substrate heating chip as an observation window; and a first hollow-out area is built in the first silicon substrate and the dielectric layer on the lower surface of the first silicon substrate, and the first hollow-out area covers the observation window.
The top plate chip comprises a second silicon substrate, a second silicon substrate lower surface dielectric layer constructed on the lower surface of the second silicon substrate, and a second silicon substrate upper surface dielectric layer constructed on the upper surface of the second silicon substrate, wherein the dielectric layer is made of silicon nitride and has the thickness of 50nm; a top plate chip capacitor plate which is made of gold and has the thickness of 100nm is constructed on the dielectric layer on the upper surface of the second silicon substrate; a top plate chip contact electrode, a top plate chip support column and a top plate chip isolation layer which are constructed on the dielectric layer on the upper surface of the second silicon substrate, are made of gold and have the thickness of 100nm; and a second hollow area is built in the second silicon substrate and the dielectric layer on the lower surface of the second silicon substrate, and the second hollow area covers the observation window.
As shown in fig. 2, the first hollow-out region and the second hollow-out region correspond to each other in a direction perpendicular to the surface of the first silicon substrate, and cover the observation window region between the heating electrodes.
Make roof chip and base plate chip contact under the circumstances of guaranteeing that base plate chip support column and roof chip support column aim at, use epoxy to bond closed.
The manufacturing method of the in-situ heating chip with the air pressure sensing function specifically comprises the following steps:
for the baseplate chip, a silicon-based substrate is provided.
Forming a first silicon substrate lower surface dielectric layer on the lower surface of the first silicon substrate, and forming a first silicon substrate upper surface dielectric layer on the first silicon substrate upper surface;
specifically, a first silicon substrate upper surface dielectric layer is formed on the first silicon substrate upper surface by using Low Pressure Chemical Vapor Deposition (LPCVD), and a first silicon substrate lower surface dielectric layer is formed on the first silicon substrate lower surface, wherein the material is silicon nitride Si 3 N 4 The thickness is 100nm.
Forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support column and a substrate chip isolation layer on a dielectric layer on the upper surface of a first silicon substrate;
specifically, a metal Lift-off (Lift-off) process is used for forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support pillar and a substrate chip isolation layer pattern on a medium layer on the upper surface of a first silicon substrate, wherein the material is gold, the thickness of the substrate chip support pillar is 100nm, and the substrate chip support pillar is not in contact with the substrate chip heating electrode, the substrate chip capacitor plate and the substrate chip contact electrode, so that short circuit of a circuit is avoided.
Forming a first hollow-out area penetrating through the first silicon substrate and a dielectric layer on the lower surface of the first silicon substrate;
specifically, a potassium hydroxide etching solution is used for wet etching to form a first hollow-out area penetrating through the dielectric layer on the lower surface of the first silicon substrate and the first silicon substrate on the lower surface of the first silicon substrate.
For the top plate chip, a silicon-based substrate is provided.
Forming a second silicon substrate lower surface dielectric layer on the lower surface of the second silicon substrate, and forming a second silicon substrate upper surface dielectric layer on the upper surface of the second silicon substrate;
specifically, a second silicon substrate upper surface dielectric layer is formed on the second silicon substrate upper surface by using Low Pressure Chemical Vapor Deposition (LPCVD), and a second silicon substrate lower surface dielectric layer is formed on the second silicon substrate lower surface, wherein the material is silicon nitride Si 3 N 4 And the thickness is 50nm.
Forming a top plate chip contact electrode, a top plate chip capacitor polar plate, a top plate chip support column and a top plate chip isolation layer on a medium layer on the upper surface of a second silicon substrate;
specifically, a metal Lift-off (Lift-off) process is used for forming patterns of a top plate chip contact electrode, a top plate chip capacitor polar plate, a top plate chip support column and a top plate chip isolation layer on a medium layer on the upper surface of a second silicon substrate, wherein the top plate chip support column is made of gold, the thickness of the top plate chip support column is 100nm, and the top plate chip support column is not in contact with the top plate chip capacitor polar plate and the top plate chip contact electrode, so that short circuit is avoided.
Thickening the top plate chip contact electrode, the top plate chip support pillar and the top plate chip isolation layer on the basis of the top plate chip contact electrode, the top plate chip support pillar and the top plate chip isolation layer;
specifically, a metal stripping (Lift-off) process is used, the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer are thickened on the basis of the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer, the material is gold, the thickness is 100nm, the top plate chip support column is not in contact with the top plate chip contact electrode, a circuit short circuit is avoided, and meanwhile, a gap is formed between the top plate chip support column and a capacitor plate and is convenient to leave, so that a capacitor sensor is formed.
Forming a second hollow-out area which penetrates through the second silicon substrate and the dielectric layer on the lower surface of the second silicon substrate;
specifically, a second hollow-out area penetrating through the dielectric layer on the lower surface of the second silicon substrate and the second silicon substrate is formed on the lower surface of the second silicon substrate by using a potassium hydroxide etching solution wet etching method.
Placing a sample to be tested in an observation window area of a substrate chip according to experiment requirements;
make roof chip and base plate chip contact under the condition of guaranteeing that base plate chip support column and roof chip support column aim at, make the fretwork district cover observation window district, use epoxy to bond closed.
Specifically, epoxy is applied at the interface of the substrate chip and the top plate chip.
Example 2
An in-situ heating chip with an air pressure sensing function, as shown in fig. 1, includes a substrate chip and a top plate chip.
The substrate chip comprises a first silicon substrate, a first silicon substrate lower surface dielectric layer constructed on the lower surface of the first silicon substrate, and a first silicon substrate upper surface dielectric layer constructed on the upper surface of the first silicon substrate, wherein the dielectric layer is made of silicon nitride and has the thickness of 50nm; a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor polar plate, a substrate chip support column and a substrate chip isolation layer which are constructed on a dielectric layer on the upper surface of a first silicon substrate, wherein the material is platinum and the thickness is 150nm; taking the center of the substrate heating chip as an observation window; and a first hollow-out area is built in the first silicon substrate and the dielectric layer on the lower surface of the first silicon substrate, and the first hollow-out area covers the observation window.
The top plate chip comprises a second silicon substrate, a second silicon substrate lower surface dielectric layer constructed on the lower surface of the second silicon substrate, and a second silicon substrate upper surface dielectric layer constructed on the upper surface of the second silicon substrate, wherein the dielectric layer is made of silicon nitride and has the thickness of 50nm; a top plate chip capacitor plate is constructed on the dielectric layer on the upper surface of the second silicon substrate, the material is platinum, and the thickness is 100nm; a top plate chip contact electrode, a top plate chip support column and a top plate chip isolation layer which are constructed on a dielectric layer on the upper surface of a second silicon substrate, wherein the material is platinum and the thickness is 250nm; and a second hollow area is built in the second silicon substrate and the dielectric layer on the lower surface of the second silicon substrate, and the second hollow area covers the observation window.
As shown in fig. 2, the first hollow-out region and the second hollow-out region correspond to each other in a direction perpendicular to the surface of the first silicon substrate, and cover the observation window region between the heating electrodes.
Make roof chip and base plate chip contact under the circumstances of guaranteeing that base plate chip support column and roof chip support column aim at, use epoxy to bond closed.
The manufacturing method of the in-situ heating chip with the air pressure sensing function specifically comprises the following steps:
for the baseplate chip, a silicon-based substrate is provided.
Forming a first silicon substrate lower surface dielectric layer on the lower surface of the first silicon substrate, and forming a first silicon substrate upper surface dielectric layer on the first silicon substrate upper surface;
specifically, a first silicon substrate upper surface dielectric layer is formed on the first silicon substrate upper surface by using Low Pressure Chemical Vapor Deposition (LPCVD), and a first silicon substrate lower surface dielectric layer is formed on the first silicon substrate lower surface, wherein the material is silicon nitride Si 3 N 4 And the thickness is 50nm.
Forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support column and a substrate chip isolation layer on a dielectric layer on the upper surface of a first silicon substrate;
specifically, a metal Lift-off (Lift-off) process is used for forming a substrate chip contact electrode, a substrate chip heating electrode, a substrate chip capacitor plate, a substrate chip support pillar and a substrate chip isolation layer pattern on a medium layer on the upper surface of a first silicon substrate, wherein the material is platinum, the thickness of the substrate chip support pillar is 150nm, and the substrate chip support pillar is not in contact with the substrate chip heating electrode, the substrate chip capacitor plate and the substrate chip contact electrode, so that short circuit of a circuit is avoided.
Forming a first hollow-out area penetrating through the first silicon substrate and a dielectric layer on the lower surface of the first silicon substrate;
specifically, a potassium hydroxide etching solution is used for wet etching to form a first hollow-out area penetrating through the dielectric layer on the lower surface of the first silicon substrate and the first silicon substrate on the lower surface of the first silicon substrate.
For the top plate chip, a silicon-based substrate is provided.
Forming a second silicon substrate lower surface dielectric layer on the lower surface of the second silicon substrate, and forming a second silicon substrate upper surface dielectric layer on the upper surface of the second silicon substrate;
specifically, a second silicon substrate upper surface dielectric layer is formed on the second silicon substrate upper surface by using Low Pressure Chemical Vapor Deposition (LPCVD), and a second silicon substrate lower surface dielectric layer is formed on the second silicon substrate lower surface, wherein the material is silicon nitride Si 3 N 4 And the thickness is 50nm.
Forming a top plate chip contact electrode, a top plate chip capacitor polar plate, a top plate chip support column and a top plate chip isolation layer on a medium layer on the upper surface of a second silicon substrate;
specifically, a metal Lift-off (Lift-off) process is used for forming patterns of a top plate chip contact electrode, a top plate chip capacitor polar plate, a top plate chip support column and a top plate chip isolation layer on a medium layer on the upper surface of a second silicon substrate, wherein the material is platinum, the thickness of the platinum is 100nm, and the top plate chip support column is not in contact with the top plate chip capacitor polar plate and the top plate chip contact electrode, so that short circuit is avoided.
Thickening the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer on the basis of the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer;
specifically, a metal stripping (Lift-off) process is used, the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer are thickened on the basis of the top plate chip contact electrode, the top plate chip support column and the top plate chip isolation layer, the material is platinum, the thickness is 150nm, the top plate chip support column is not in contact with the top plate chip contact electrode, a circuit short circuit is avoided, and meanwhile, a gap is formed between the top plate chip support column and the capacitor plate and is convenient to leave, and a capacitor sensor is formed.
Forming a second hollow-out area which penetrates through the second silicon substrate and the dielectric layer on the lower surface of the second silicon substrate;
specifically, a second hollow-out area penetrating through the dielectric layer on the lower surface of the second silicon substrate and the second silicon substrate is formed on the lower surface of the second silicon substrate by using a potassium hydroxide etching solution wet etching method.
Placing a sample to be tested in an observation window area of a substrate chip according to experiment requirements;
make roof chip and base plate chip contact under the condition of guaranteeing that base plate chip support column and roof chip support column aim at, make the fretwork district cover observation window district, use epoxy to bond closed.
Specifically, epoxy is applied at the interface of the substrate chip and the top plate chip.

Claims (10)

1. The utility model provides an in situ heating chip that possesses atmospheric pressure sensing function which characterized in that: the chip comprises a substrate chip and a top plate chip;
the substrate chip comprises a first silicon substrate (1), a first lower surface dielectric layer (2) constructed on the lower surface of the first silicon substrate (1), and a first upper surface dielectric layer (3) constructed on the upper surface of the first silicon substrate (1); a substrate chip contact electrode (4), a substrate chip capacitor plate (6), a substrate chip heating electrode (5), a substrate chip support column (7) and a substrate chip isolation layer (18) which are sequentially built on the first upper surface dielectric layer (3); a first hollow-out area (8) penetrating through the first silicon substrate (1) and the first lower surface dielectric layer (2); the center of the substrate heating chip (5) is used as an observation window (16);
the top plate chip comprises a second silicon substrate (9), a second lower surface dielectric layer (10) constructed on the lower surface of the second silicon substrate (9), and a second upper surface dielectric layer (11) constructed on the upper surface of the second silicon substrate (9); a top plate chip capacitor plate (13) built on the second upper surface dielectric layer (11); a top plate chip contact electrode (12), a top plate chip support pillar (14) and a top plate chip isolation layer (19) which are sequentially built on the second upper surface dielectric layer (11); the second hollow area (15) penetrates through the second silicon substrate (9) and the second lower surface dielectric layer (10);
the upper surfaces of the substrate chip and the top plate chip are oppositely arranged, so that the top plate chip supporting columns (14) and the substrate chip supporting columns (7) are aligned and contacted for packaging, and a sealed cavity is formed.
2. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the substrate chip capacitor plate (6) and the top plate chip capacitor plate (13) adopt interdigital structures, and the capacitance value of the capacitor plates is larger than 0.1pF at room temperature.
3. The in-situ heating chip with air pressure sensing function as claimed in claim 2, wherein: the substrate chip capacitor plate (6) and the top plate chip capacitor plate (13) form a capacitive electrode pair by the substrate chip capacitor plate (6) and the top plate chip capacitor plate (13) for detecting the air pressure change in the sealing cavity.
4. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the substrate chip heating electrode (5) is used for controlling the temperature inside the sealing cavity, and simultaneously changes the appearance of a sample inside the observation window (16) through a transmission electron microscope.
5. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the substrate chip isolation layer (18) and the top plate chip isolation layer (19) are oppositely adhered to form an isolation belt with a slit, so that pollution of sample sublimation to a capacitor plate is reduced, and the use stability of the chip is improved.
6. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the first lower surface dielectric layer (2), the first upper surface dielectric layer (3), the second lower surface dielectric layer (10) and the second upper surface dielectric layer (11) are made of insulating materials such as silicon nitride and the like, and the thickness of the dielectric layers is required to be 5 nm-50 nm so as to meet the thickness requirement of the observation window (16).
7. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the substrate chip contact electrode (4), the substrate chip heating electrode (5), the substrate chip capacitor plate (6), the substrate chip support column (7), the top plate chip contact electrode (12), the top plate chip capacitor plate (13), the top plate chip support column (14), the substrate chip isolation layer (18) and the top plate chip isolation layer (19) are made of gold and platinum metal materials, and the thickness of the substrate chip contact electrode is 150 nm-250 nm.
8. The in-situ heating chip with air pressure sensing function as claimed in claim 3, wherein: the thickness of the top plate chip capacitor plate (13) is smaller than that of the top plate chip contact electrode (14), and the top plate chip capacitor plate is used for reserving a space between the substrate chip capacitor plate (6) and the top plate chip capacitor plate (13) to form a capacitive air pressure sensor.
9. The in-situ heating chip with air pressure sensing function as claimed in claim 1, wherein: the adhesive (17) is made of epoxy resin, silver adhesive, ITO, indium or ultraviolet curing adhesive.
10. A method for manufacturing an in-situ heating chip with an air pressure sensing function as claimed in claim 1, wherein the method comprises:
step 1, preparing a substrate chip: forming a first upper surface dielectric layer (3) and a first lower surface dielectric layer (2) on the upper surface and the lower surface of a first silicon substrate (1); forming a substrate chip contact electrode (4), a substrate chip heating electrode (5), a substrate chip capacitor plate (6), a substrate chip support pillar (7) and a substrate chip isolation layer (18) on the first upper surface dielectric layer (3); forming a first through hollow-out area (8) on the first silicon substrate (1) and the first lower surface dielectric layer (2);
step 2, preparing a top plate chip: forming a second upper surface dielectric layer (11) and a second lower surface dielectric layer (10) on the upper surface and the lower surface of a second silicon substrate (9); forming a top plate chip capacitor plate (13) on the second upper surface dielectric layer (11); forming a top plate chip contact electrode (12), a top plate chip support pillar (14) and a top plate chip isolation layer (19) on the second upper surface dielectric layer (11); forming a second through hollow-out area (15) on the second silicon substrate (9) and the second lower surface dielectric layer (10);
firstly, a top plate chip contact electrode (12), a top plate chip capacitor polar plate (13), a top plate chip support pillar (14) and a top plate chip isolation layer (19) are formed by a metal stripping process, and then the top plate chip contact electrode (12), the top plate chip support pillar (14) and the top plate chip isolation layer (19) are thickened by the metal stripping process to achieve the effect of layering with the top plate chip capacitor polar plate (13);
step 3, placing a sample to be tested in an observation window area of the substrate chip according to experiment requirements;
the upper surfaces of the substrate chip and the top plate chip are opposite, the substrate chip supporting columns (7) are aligned and contacted with the top plate chip supporting columns (14), and the junction of the substrate chip and the top plate chip is coated with an adhesive (17) for bonding and closing.
CN202211221695.7A 2022-10-08 2022-10-08 In-situ heating chip with air pressure sensing function and manufacturing method thereof Pending CN115557462A (en)

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CN202211221695.7A CN115557462A (en) 2022-10-08 2022-10-08 In-situ heating chip with air pressure sensing function and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211221695.7A CN115557462A (en) 2022-10-08 2022-10-08 In-situ heating chip with air pressure sensing function and manufacturing method thereof

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CN115557462A true CN115557462A (en) 2023-01-03

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