CN115553503A

CN115553503A - Infrared heater, aerosol forming device and preparation method of infrared heater

Info

Publication number: CN115553503A
Application number: CN202211205431.2A
Authority: CN
Inventors: 周国俊; 肖卫强; 储国海; 王骏; 汪华文; 蒋健; 胡安福; 蔡兴华; 赵亮; 陈震
Original assignee: China Tobacco Zhejiang Industrial Co Ltd
Current assignee: China Tobacco Zhejiang Industrial Co Ltd
Priority date: 2022-09-30
Filing date: 2022-09-30
Publication date: 2023-01-03

Abstract

The invention relates to an infrared heater, which comprises an insulating base body with a cavity, an infrared radiation layer deposited on the outer surface of the insulating base body and an electrode layer formed on the infrared radiation layer through printing and sintering, wherein the insulating base body comprises a high-temperature-resistant material, and the thickness of the middle area of the infrared radiation layer is smaller than that of the first end area of the outer radiation layer and the second end area of the outer radiation layer. This application can be within 20 ℃, even control within 5 ℃ with the temperature difference control of the middle zone on infrared radiation layer and tip region.

Description

Infrared heater, aerosol forming device and preparation method of infrared heater

Technical Field

The patent relates to the technical field of novel tobacco, in particular to an infrared heater, an aerosol forming device and a preparation method of the infrared heater.

Background

Smoking articles such as cigarettes and cigars burn tobacco during use to produce smoke. Attempts have been made to provide alternatives to these tobacco-burning articles by creating products that release compounds without burning. An example of such a product is a so-called heat not burn product, which releases compounds by heating tobacco instead of burning tobacco.

The existing smoking set which is non-combustible by heating mainly generates heat through a heating element and conducts the heat to an aerosol generating substrate in a cavity, so that at least one component in the smoking set volatilizes to generate aerosol for a user to suck. In addition, as shown in fig. 13, in the conventional infrared heater, since the axial heat loss rate of the end regions at both ends is larger than the radial heat loss rate of the heater, the temperature of the end regions is low (157 ℃) and the middle temperature is high (197 ℃), and the temperature difference is too large (more than 40 ℃) and the tobacco at the end portions cannot be sufficiently smoked or the temperature of the middle tobacco is too high.

Disclosure of Invention

The invention aims to provide an infrared heater, an aerosol forming device and a preparation method of the infrared heater, and aims to solve the technical problem that heating is uneven due to low temperature at two ends and high temperature in the middle of a current infrared heating pipe.

In order to solve the technical problems, the invention adopts the following technical scheme:

in one aspect, the present invention provides an infrared heater comprising:

the insulating substrate is made of high-temperature-resistant materials;

an infrared radiation layer for generating infrared light to radiate the heated aerosol-forming substrate to generate a smokable aerosol;

characterised in that, on heating the aerosol-forming substrate:

a temperature difference between a first end region of the infrared radiating layer and a middle region of the infrared radiating layer is less than 20 ℃;

the temperature difference between the second end region of the infrared radiating layer and the middle region of the infrared radiating layer is less than 20 ℃.

Further, on heating the aerosol-forming substrate:

the temperature difference between the first end region of the infrared radiation layer and the middle region of the infrared radiation layer is less than 5 ℃;

the temperature difference between the second end region of the infrared radiation layer and the middle region of the infrared radiation layer is less than 5 ℃.

Further, the thickness of the middle region is less than the thickness of the first end region;

the thickness of the middle region is less than the thickness of the second end region.

Further, the infrared heater includes an electrode layer formed on the infrared radiation layer, the electrode layer including a first electrode layer (13) and a second electrode layer (14):

the first electrode layer comprises a first conductive portion (132) sequentially coupled to the first end region, the middle region, and the second end region;

the second electrode layer comprises a second conductive portion (142) coupled in sequence to couple the second end region, the middle region, and the first end region in sequence;

upon heating of the aerosol-forming substrate, an electrical current flows from the first electrically conductive portion through the infrared radiation layer to the second electrically conductive portion.

Further, the thickness of the electrode layer is 10-25 μm.

Further, the thickness of the middle area is 30-900nm.

Further, the first end region has a thickness of 500-2000nm, and/or the second end region has a thickness of 500-2000nm.

Further, the ratio of the thickness of the middle region to the thickness of the first end region is 1 (1.10-10), and/or the ratio of the thickness of the middle region to the thickness of the second end region is 1 (1.10-10).

Further, the thickness between the middle area and the first end area is in a step transition or a gradual transition, and/or the thickness between the middle area and the second end area is in a step transition or a gradual transition.

Further, the infrared radiation layer is deposited on the outer surface of the insulating substrate by chemical vapor deposition.

Further, the number of depositions in the intermediate region is smaller than the number of depositions in the first end region, and/or the number of depositions in the intermediate region is smaller than the number of depositions in the second end region.

Further, during the chemical vapor deposition, the temperature of the middle region is lower than the temperature of the first end region, and/or the temperature of the middle region is lower than the temperature of the second end region.

Further, the infrared radiation layer has a resistivity of 1 × 10 ^-6 Ω·m~15×10 ^-6 Ω·m。

Further, the infrared radiation layer includes an antimony-doped tin oxide film layer or a phosphorus-doped tin oxide film layer.

Further, the mol ratio of Sn to Sb of the antimony-doped tin oxide film layer is 9.

Furthermore, the resistivity of the antimony-doped tin oxide film layer is 7 multiplied by 10 ^-6 Ω·m。

Furthermore, the mol ratio of Sn to P of the phosphorus-doped tin oxide film layer is 100.

Furthermore, the resistivity of the phosphorus-doped tin oxide film layer is 5 multiplied by 10 ^-6 Ω·m~12×10 ^-6 Ω·m。

In a second aspect, the present invention provides an aerosol-generating device comprising: casing subassembly and above-mentioned infrared heater, the heater is located in the casing subassembly.

In a third aspect, the present invention provides a method for manufacturing an infrared heater, including: and depositing an infrared radiation layer on the outer surface of the insulating base body by using a chemical vapor mode.

Further, the preparation method of the infrared heater comprises the following steps: forming an electrode layer on the infrared radiation layer, the electrode layer including a first electrode layer and a second electrode layer;

the first electrode layer comprises a first conductive portion coupled in sequence to the first end region, the middle region, and the second end region;

the second electrode layer comprises a second conductive portion that is coupled in sequence to the second end region, the middle region, and the first end region;

upon heating of the aerosol-forming substrate, an electrical current flows from the first electrically conductive portion, through the infrared-radiating layer, and to the second electrically conductive portion.

Further, the depositing an infrared radiation layer on the outer surface of the insulating substrate by using a chemical vapor deposition method comprises: benefit to

And performing primary deposition treatment on the insulating base body in a chemical vapor mode, isolating the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body after the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body reaches the target thickness, performing the next deposition treatment on the insulating base body, and repeating the steps until the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body reaches the target thickness.

Further, the thickness of the infrared radiation layer once deposited on the outer surface of the insulating base is 50 to 300nm.

Further, the deposition temperature of the deposition area is 650-750 ℃, and the deposition residence time of the insulating substrate passing through the deposition area once is 20-100s.

Further, the preparation method adopts a CVD continuous coating device which is provided with one or more CVD deposition areas.

Further, the method for depositing the infrared radiation layer on the outer surface of the insulating base body by using the chemical vapor mode comprises the following steps:

heating the insulating substrate to maintain the temperature of the insulating substrate at a deposition temperature;

and stopping heating the insulating base body in the partial area after the infrared radiation layer deposited on the outer surface of the partial area of the insulating base body reaches the target thickness. Wherein, the insulating matrix can be made of high temperature resistant material with high infrared transmittance, and the material of the matrix 11 is selected from at least one of the following materials: germanium single crystal, silicon single crystal, gallium arsenide, gallium phosphide, sapphire, aluminum oxide polycrystal, spinel, magnesium oxide, yttrium oxide, quartz, yttrium aluminum garnet, zinc sulfide, zinc selenide, silicon carbide, silicon nitride, magnesium fluoride, calcium fluoride, arsenic trisulfide and the like. Preferably, the material of the insulating substrate is selected from quartz.

Tin oxide (SnO) ₂ ) Is a very important wide-bandgap (the forbidden band width is 3.7-4.3 eV) metal oxide semiconductor material. Common single crystal SnO ₂ Is of tetragonal rutile structure, in the tin oxide unit cell, sn atoms are located at the central position of oxygen octahedron, and 6O atoms are arranged around each Sn atom; similarly, 3 Sn atoms are attached around each O atom. Polycrystalline SnO ₂ The film is composed of crystal grains with a tetragonal cassiterite structure or a tetragonal rutile structure, and the grown SnO is prepared by a film process ₂ The preferred orientation of crystal grains of the film is closely related to the crystal structure, the surface state, the growth temperature and other parameters of the substrate material.

In the antimony doped tin oxide, 5 valence electrons are arranged outside the Sb atom nucleus to replace +4 valence Sn atoms in the crystal lattice, and each Sb atom can be extractedSupply 1 free electron, snO ₂ The film becomes an electron-conducting n-type semiconductor after doping with Sb.

At a suitable doping concentration, snO ₂ The P film is a polycrystalline degenerate semiconductor, P is usually in SnO ₂ As a pentavalent donor atom in the lattice. The conductivity increases with increasing P concentration, and decreases with increasing P concentration when the P concentration reaches a certain value. When P is initially doped, P acts as a donor atom to increase the carrier concentration, thereby resulting in SnO ₂ The conductivity of P is increased; when a certain value is reached, the concentration of P is further increased, so that the concentration of ionized impurities and the density of lattice defects are increased, the mobility of carriers is decreased, and the conductivity is decreased. The phosphorus-doped tin oxide contains 5 to 9 mol% of phosphorus atoms, preferably 5 to 8.7 mol%, and more preferably 6 to 8.7 mol%.

Wherein the aerosol-generating article is a smoking article comprising an aerosol-forming substrate that generates, by heating, an aerosol that is inhalable directly into a user's lungs through the user's mouth.

Preferably, the aerosol-forming substrate is a solid aerosol-forming substrate. The aerosol-forming substrate may comprise both solid and liquid components.

Preferably, the aerosol-forming substrate comprises nicotine. In some preferred embodiments, the aerosol-forming substrate comprises tobacco. For example, the aerosol-forming material may be formed from a sheet of homogenised tobacco.

Alternatively or additionally, the aerosol-forming substrate may comprise a tobacco-free aerosol-forming material. For example, the aerosol-forming material may be a non-tobacco plant fibre sheet comprising a nicotine salt and an aerosol-forming agent.

If the aerosol-forming substrate is a solid aerosol-forming substrate, the solid aerosol-forming substrate may comprise one or more of a powder, granules, pellets, fragments, shreds, sticks or sheets containing one or more of herbaceous plant leaves, tobacco ribs, flat tobacco and homogenised tobacco.

Preferably, the aerosol-forming substrate comprises a plug comprising a gathered sheet of homogenised tobacco material or other aerosol-forming material surrounded by a wrapper.

In this patent, aerosol-former is used to describe any suitable known compound or mixture of compounds which, in use, promotes the formation of an aerosol and is substantially resistant to thermal degradation at the operating temperature of the aerosol-generating article.

Suitable aerosol-forming agents are known in the art and include, but are not limited to: polyhydric alcohols such as propylene glycol, triethylene glycol, 1, 3-butanediol and glycerin; esters of polyhydric alcohols, such as glycerol monoacetate, glycerol diacetate, or glycerol triacetate; and aliphatic esters of mono-, di-or polycarboxylic acids, such as dimethyl dodecanedioate and dimethyl tetradecanedioate. Preferred aerosol formers are polyhydric alcohols or mixtures thereof, such as propylene glycol, triethylene glycol, 1, 3-butanediol, and most preferably glycerol.

The aerosol-forming substrate may comprise a single aerosol former. Alternatively, the aerosol-forming substrate may comprise a combination of two or more aerosol-forming agents.

Preferably, the aerosol-forming substrate has an aerosol former content of greater than 5% by dry weight. More preferably, the aerosol-forming substrate may have an aerosol former content of between about 5% and about 30% by dry weight. In one embodiment, the aerosol-forming substrate has an aerosol former content of about 20% by dry weight.

Aerosol-forming substrates including tobacco lamina homogenised for use in aerosol-generating articles may be prepared by processes known in the art such as roller compaction, slurry and paper making.

Preferably, the aerosol-forming article is in the form of a cigarette comprising an aerosol-forming substrate, a support element, an aerosol-cooling element and a mouthpiece. Preferably, the aerosol-forming substrate, the support element, the aerosol-cooling element and the mouthpiece are substantially cylindrical and have substantially comparable outer diameters.

The support element may be located immediately downstream of the aerosol-forming substrate and may be in close proximity to the aerosol-forming substrate.

The support element may be formed from any suitable material or combination of materials. For example, the support element may be formed of one or more materials selected from the group consisting of: cellulose acetate; a paperboard; crimped paper, such as crimped heat-resistant paper or crimped parchment paper; and polymeric materials such as Low Density Polyethylene (LDPE). In a preferred embodiment, the support element is formed from cellulose acetate.

The support element may comprise a hollow tubular element. In a preferred embodiment, the support element comprises a medium cellulose acetate tube.

The aerosol-cooling element may be located downstream of the aerosol-forming substrate, for example the aerosol-cooling element may be located immediately downstream of the support element, and may be in close proximity to the support element. The aerosol-cooling element may also be located between the support element and the mouthpiece, which is located at the most downstream end of the aerosol-generating article.

The aerosol-cooling element may have a total surface area of between about 300 square millimeters per millimeter of length and about 1000 square millimeters per millimeter of length. In a preferred embodiment, the aerosol-cooling element has a total surface area of about 500 square millimetres per millimetre of length.

Preferably, the aerosol-cooling element has a low resistance to draw. That is, preferably, the aerosol-cooling element provides a low resistance to the passage of air through the aerosol-generating article. Preferably, the aerosol-cooling element does not substantially affect the resistance to draw of the aerosol-generating article.

The aerosol-cooling element may comprise a plurality of longitudinally extending channels. The plurality of longitudinally extending channels may be defined by a sheet of material that has been subjected to one or more of crimping, pleating, gathering and folding to form the channels. The plurality of longitudinally extending channels may be defined by a single sheet that has undergone one or more of crimping, pleating, gathering and folding to form the plurality of channels. Alternatively, the plurality of longitudinally extending channels may be defined by a plurality of sheets that have been subjected to one or more of crimping, pleating, gathering and folding to form the plurality of channels.

In some embodiments, the aerosol-cooling element may comprise a gathered sheet of material selected from the group consisting of: metal foils, polymeric materials and substantially non-porous paper or paperboard. In some embodiments, the aerosol-cooling element may comprise a gathered sheet of material selected from the group consisting of: polyethylene (PE), polypropylene (PP), polyvinyl chloride (PVC), polyethylene terephthalate (PET), polylactic acid (PLA), cellulose Acetate (CA), and aluminum foil. In a preferred embodiment, the aerosol-cooling element comprises a gathered sheet of biodegradable material. For example, a gathered sheet of non-porous paper or a gathered sheet of biodegradable polymeric material (such as polylactic acid).

The aerosol-generating article may comprise a mouthpiece located at the mouth end of the aerosol-generating article. The mouthpiece may be located immediately downstream of and in close proximity to the aerosol-cooling element. The mouthpiece may comprise a filter. The filter may be formed from one or more suitable filter materials. Many such filter materials are known in the art. In one embodiment, the mouthpiece may comprise a filter formed from cellulose acetate tow.

Elements of the aerosol-generating article (e.g. the aerosol-forming substrate and any other elements of the aerosol-generating article, such as the support element, the aerosol-cooling element and the mouthpiece) are surrounded by an outer wrapper. The outer wrapper is formed of any suitable material or combination of materials. Preferably, the outer wrapper is cigarette paper.

Smoking articles, i.e. aerosol-generating devices, are used to describe devices that interact with an aerosol-forming substrate of an aerosol-generating article to generate an aerosol. Preferably, the aerosol-generating device is a smoking device that interacts with an aerosol-generating substrate of an aerosol-generating article to generate an aerosol that is directly inhalable into a user's lungs through the user's mouth. The aerosol-generating device may be a holder for a smoking article.

The heating mode of the smoking set utilizes the infrared heating principle. The infrared heating mainly comprises peripheral heating, is a better use scene of the invention, and also comprises central heating and the like. The heater is preferably needle, strip, leaf or tube shaped.

The aerosol-generating device is a portable or handheld aerosol-generating device that a user can comfortably hold between the fingers of a single hand. The aerosol-generating device may be substantially cylindrical in shape. The aerosol-generating device may have a length of between about 70 mm and about 120 mm.

The power source may be any suitable power source, for example a dc voltage source, such as a battery. In one embodiment, the power source is a lithium ion battery. Alternatively, the power source may be a nickel metal hydride battery, a nickel cadmium battery, or a lithium based battery, such as a lithium cobalt, lithium iron phosphate, lithium titanate, or lithium polymer battery. The weight of the power source should be such that the smoking article weight as a whole can be comfortably held between the fingers of a single hand of a user.

The control element may be a circuit and may include one or more microprocessors or microcontrollers.

According to the preparation method of the infrared heater and the aerosol generating device, the infrared radiation layer is formed on the insulating base body in a chemical vapor mode, and when the infrared radiation layer heats the aerosol forming base material through infrared radiation, the center temperature of the aerosol forming base material is high, the heating is uniform, and the preheating time is short.

Compared with the prior art, the invention has the beneficial effects that:

according to the infrared heater, the aerosol generating device and the preparation method of the infrared heater, the infrared radiation layer with the axial non-uniform thickness is formed on the insulating substrate, the two ends of the infrared heating pipe and the middle heating temperature are equivalent, and the temperature difference can be controlled within 20 ℃ or even within 5 ℃.

Drawings

The foregoing summary, as well as the following detailed description of the patent, will be better understood when read in conjunction with the appended drawings. It is to be noted that the figures are only intended as examples of the claimed solution.

FIG. 1 is a schematic diagram of an infrared heater configuration in one embodiment;

FIG. 2 is a schematic current flow diagram of the infrared heater of FIG. 1;

FIG. 3 is an equivalent circuit diagram of the infrared heater of FIG. 1;

FIG. 4 is a schematic diagram of the overall structure in one embodiment;

FIG. 5 is a schematic view of an assembly configuration in one embodiment;

FIG. 6 is a schematic view of an infrared radiation layer in one embodiment;

FIGS. 7-9 are schematic illustrations of an IR radiation layer deposition process in the embodiment of FIG. 6;

FIG. 10 is a schematic view of an infrared radiation layer in another embodiment;

FIGS. 11 and 12 are schematic illustrations of an IR radiation layer deposition process in the embodiment of FIG. 10;

FIG. 13 is a diagram of a temperature field distribution of a conventional infrared heating tube after being energized;

in the figure: 100-an aerosol-generating device; 11-an insulating substrate; 12-an infrared radiation layer; 121-a first end region; 122-middle zone; 123-a second end region; 13-a first electrode layer; 131-a first coupling portion; 132-a first conductive portion; a-a chamber; H1-H8-jig heating unit; s1, S2-shielding structure; 14-a second electrode layer; 141-a second coupling portion; 142-a second conductive portion; 15-a first base; 16-a second base; 17-a thermally insulating tube; 2-a temperature sensor; 3-a circuit board; 31-a charging interface; 4-pressing a key; 6-a housing assembly; 61-a housing; 62-a stationary shell; 621-front shell; 622-rear shell; 64-a bottom cover; 641-inlet pipe; 7-power supply.

Detailed Description

To facilitate an understanding of the present application, the present application is described in more detail below with reference to the following figures and detailed description. It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms "upper", "lower", "left", "right", "inner", "outer" and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

As shown in fig. 1, the heater of the present embodiment includes an insulating substrate 11 having a cavity, an infrared radiation layer deposited on an outer surface of the insulating substrate 11, and an electrode layer formed on the infrared radiation layer by printing and sintering. Wherein the chamber a is for receiving an aerosol-forming substrate.

The insulating substrate 11 may have a cylindrical shape, a prismatic shape, or other cylindrical shapes, or a non-cylindrical shape (e.g., a plate shape). The insulating substrate 11 is preferably cylindrical, the infrared radiation layer 12 is arranged on the outer side of the insulating substrate 11, the chamber a is a cylindrical hole penetrating through the middle of the insulating substrate 11, and the inner diameter of the hole is slightly larger than the outer diameter of the aerosol-forming product, so that the aerosol-forming product can be conveniently placed in the chamber a to be heated.

The insulating substrate 11 may be made of a high temperature resistant and transparent material such as quartz glass, ceramic, or mica, or may be made of other materials having high infrared transmittance, for example: a high-temperature resistant material having an infrared transmittance of 95% or more.

The infrared radiation layer 12 may be schematically divided into a first end region 121, a middle region 122, and a second end region 123, the middle region 122 of the infrared radiation layer 12 having a thickness less than the thickness of the end regions of the infrared radiation layer.

The infrared heater includes an electrode layer formed on an infrared radiation layer, and the electrode layer includes a first electrode layer 13 and a second electrode layer 14.

The first electrode layer 13 includes a first coupling portion 131 and a first conductive portion 132. One pole of the power source is connected to the first coupling portion 131, the first coupling portion 131 is coupled to one end of the first conductive portion 132, and the other end of the first conductive portion 132 is coupled to the first end region 121, the middle region 122, and the second end region 123 in sequence. In application, the first conductive portion 132 is a strip.

The second electrode layer 14 includes a second coupling portion 141 and a second conductive portion 142. The other terminal of the power source is connected to the second coupling portion 141, and the second coupling portion 141 is coupled to one end of the second conductive portion 142 and the other end of the second conductive portion 142 is coupled to the second end region 123, the middle region 122 and the first end region 121 in sequence. In application, the second conductive portion 142 is a strip. As shown in figure 2, on heating of the aerosol-forming substrate, an electrical current flows from the first electrically conductive portion 132, through the infrared-radiating layer 12, and to the second electrically conductive portion 142.

When the first electrode layer 13 and the second electrode layer 14 are respectively connected to a power source, as shown in fig. 3, the first end region 121, the middle region 122 and the second end region 123 are connected in parallel, the voltages of the regions are substantially the same, and therefore the heat generation power of the regions is inversely proportional to the resistance of the regions, and therefore the heat generation power of the first end region 121 and the second end region 123 is higher than that of the middle region 122, so that the rapid heat loss of the first end region 121 and the second end region 123 can be compensated, and the temperatures of the first end region 121 and the second end region 123 can be equivalent to that of the middle region 122. According to the non-uniform infrared radiation layer structure provided by the patent, the temperature difference between the temperature of the first end area 121 and the temperature of the second end area 123 and the temperature difference between the temperature of the middle area 122 can be controlled within 20 ℃, and if the adopted CVD and other processes improve the preparation precision, the temperature difference between the temperature of the first end area 121 and the temperature of the second end area 123 and the temperature difference between the temperature of the middle area 122 can be further controlled within 5 ℃.

The thickness of the intermediate region 122 of the infrared radiation layer is 30 to 900nm, preferably 50 to 900nm; the thickness of both the first end region 121 and the second end region 123 may be 500-2000nm, preferably 800-1000nm. Generally, the ratio of the thickness of the middle region 122 to the thickness of the first end region 121 and the second end region 123 is 1 (1.10-10). In practice, the axial heat loss speed of the end region of the smoking set and the radial heat loss speed of the heater need to be considered comprehensively, and for the condition that the axial heat loss speed of the end region of the smoking set such as the heat insulation pipe is far larger than the radial heat loss speed of the heater, the ratio can be set to be larger, for example, 1 (2-10); for the case that the axial heat loss speed of the end region without the heat insulation pipe is close to the radial heat loss speed of the heater, the ratio can be set to be smaller, such as 1 (1.10-2).

The infrared radiation layer 12 is deposited on the outer surface of the insulating base 11 by chemical vapor deposition. The infrared radiation layer 12 is for generating infrared light to radiatively heat the aerosol-forming substrate to generate a smokable aerosol. In one embodiment, the infrared radiation layer 12 includes an antimony doped tin oxide film layer.

The infrared radiation layer 12 receives electric power to generate heat, and generates infrared rays of a certain wavelength, such as: 8-15 μm far infrared ray. When the wavelength of the infrared light matches the absorption wavelength of the aerosol-forming substrate, the energy of the infrared light is readily absorbed by the aerosol-forming substrate. The wavelength of the infrared ray is not limited, and may be an infrared ray of 0.75 to 1000. Mu.m.

Figures 4, 5 the aerosol-generating device 100 of the present embodiment comprises a housing assembly 6 and an infrared heater provided within the housing assembly 6; the housing assembly 6 includes a housing 61, a fixing case 62 disposed in the housing 61, a first base 15 and a second base 16, and a bottom cover 64 covering an end of the housing 61, the first base 15 and the second base 16 being used to fix the insulating base 11.

An air inlet pipe 641 is protruded on the bottom cover 64, and one end of the second base 16 departing from the first base 15 is connected to the air inlet pipe 641. The first base 15, the insulating base 11, the second base 16 and the air inlet pipe 641 are coaxially arranged, the insulating base 11, the first base 15 and the second base 16 can be sealed through a sealing element, the second base 16 and the air inlet pipe 641 can also be sealed, and the air inlet pipe 641 is communicated with outside air, so that the air enters the infrared heater through the air inlet pipe 641, and the air can be smoothly sucked when a user sucks the air.

The aerosol-generating device 100 further comprises a main control circuit board 3 and a power supply 7 electrically connected to each other, the main control circuit board 3 and the power supply 7 are both arranged in the stationary housing 62, the stationary housing 62 comprises a front housing 621 and a rear housing 622, and the front housing 621 is fixedly connected to the rear housing 622. The key 4 is convexly arranged on the shell 61, the key 4 is connected with the power supply 7, and the infrared radiation layer on the surface of the infrared heater 11 can be electrified or powered off by pressing the key 4. The main control circuit board 3 is further connected with a charging interface 31, the charging interface 31 is arranged on the bottom cover 64 in a penetrating mode, and a user can charge or upgrade the aerosol generating device 100 through the charging interface 31 so as to guarantee continuous use of the aerosol generating device 100.

The aerosol-generating device 100 further comprises an insulating tube 17, the insulating tube 17 is arranged in the fixed shell 62, the insulating tube 17 is positioned on one side of the insulating base body 11, and the insulating tube 17 is arranged to prevent a large amount of heat from being transferred to the outer shell 61 to cause scald. The heat insulation pipe comprises a heat insulation material which can be heat insulation glue, aerogel felt, asbestos, aluminum silicate, calcium silicate, diatomite, zirconia and the like. The heat insulating pipe 17 may be a vacuum heat insulating pipe. An infrared reflection coating may be further formed in the heat insulation pipe 17 to reflect infrared rays emitted from the infrared radiation layer on the insulation substrate 11 back to the infrared radiation layer, thereby improving heating efficiency.

The aerosol-generating device 100 further comprises a temperature sensor 2, for example an NTC temperature sensor, for detecting the real-time temperature of the insulating substrate 11 and transmitting the detected real-time temperature to the main control circuit board 3, the main control circuit board 3 adjusting the magnitude of the current flowing through the infrared radiation layer in dependence on the real-time temperature. When the NTC temperature sensor detects a low real-time temperature in the insulating substrate 11, for example a temperature below 150 ℃ inside the insulating substrate 11, the main control circuit board 3 controls the power supply 7 to output a higher voltage to the conductive coating, thereby increasing the current fed into the infrared radiation layer, increasing the heating power of the aerosol-forming substrate, and reducing the waiting time for a user to draw a first mouth. When the NTC temperature sensor detects that the temperature of the insulation base 11 is 150-200 ℃, the main control circuit board 3 controls the power supply 7 to output a normal voltage to the conductive coating. When the NTC temperature sensor detects that the temperature of the insulation substrate 11 is 200-250 ℃, the main control circuit board 3 controls the power supply 7 to output a lower voltage to the conductive coating. When the NTC temperature sensor detects that the temperature of the inside of the insulation base 11 is 250 ℃ or more, the main control circuit board 3 controls the power supply 7 to stop outputting the voltage to the conductive coating.

Example 1

This example describes a method of manufacturing an infrared heater using the above-described structures of an aerosol-generating device and an infrared heater.

The preparation method of the infrared heater of the embodiment comprises the following steps:

s1, depositing an infrared radiation layer on the outer surface of the insulating base body in a chemical vapor mode.

In the application, the chemical vapor mode is utilized to carry out primary deposition treatment on the insulating base body, when the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body reaches the target thickness, the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body is isolated, the next deposition treatment is carried out on the insulating base body, and the steps are repeated until the infrared radiation layer deposited on the outer surface of the partial region of the insulating base body reaches the target thickness.

In practical application, the insulating matrix is heated, so that the temperature of the insulating matrix is kept at the deposition temperature; and stopping heating the insulating base body in the partial area after the infrared radiation layer deposited on the outer surface of the partial area of the insulating base body reaches the target thickness.

S2, forming an electrode layer on the infrared radiation layer, wherein the electrode layer comprises a first electrode layer and a second electrode layer;

wherein the first electrode layer comprises a first conductive portion sequentially coupled to the first end region, the middle region, and the second end region;

the second electrode layer comprises a second conductive portion coupled to the second end region, the middle region, and the first end region in sequence;

Example 2

On the basis of example 1, this example adopts the aerosol generating device and the infrared heater structure described above, and describes the preparation method of the infrared heater in detail.

step a: mixing stannic chloride, antimony trichloride, isopropanol or water to obtain a mixed solution;

concretely, stannic chloride, antimony trichloride and isopropanol or aqueous solution are used as raw materials to prepare a mixed solution with stannic chloride concentration of 0.5-2mol/L and antimony trichloride concentration of 0.05-0.2 mol/L; preferably, the concentration of tin tetrachloride is 1mol/L, and the concentration ratio of Sn to Sb is 9.

Step b: and depositing the mixed solution on the outer surface of the insulating substrate under high-temperature heating conditions.

Wherein the CVD reaction is as follows:

SnCl ₄ +O ₂ +H ₂ O→SnO ₂ +HCl↑+CO↑ (1)

SbCl ₃ +O ₂ +H ₂ O→Sb ₂ O ₅ +HCl↑ (2)

since Sb is doped with ions of Sb ⁵⁺ Ion form occupying part of SnO ₂ Sn in crystal lattice ⁴⁺ The position of the ion, so the reaction actually occurring in the above reaction (2) is as follows:

(3)

the reaction product molecules stay on the surface of the substrate, and the reaction byproduct molecules are desorbed from the surface of the substrate and discharged out of the CVD reaction chamber along with the gas flow.

Specifically, the heating temperature of a CVD (Chemical vapor Deposition) reaction chamber was set to 650 ℃, and the heating power was turned on; clamping the insulating substrate 11 on a coating jig, and starting an automatic coating mode; the coating jig is conveyed forwards along with the online CVD coating conveyor belt; the insulating substrate 11 was heated to a temperature 650 ℃ required for the reaction during the transfer in the CVD coating chamber.

The CVD coating process adopts an online CVD coating device (a CVD continuous coating device is provided with one or more CVD deposition positions, and online multi-deposition is carried out to ensure the uniformity of the film thickness and achieve a certain film thickness, one end of the CVD coating device is a charging end, and the other end of the CVD coating device is a semi-finished product discharging end); the rod-shaped coating jig penetrates through the insulating substrate 11, and fixes the insulating substrate 11 at a specific position; after the coating jig is clamped on the CVD coating equipment, the jig can rotate, so that the outer surface of the insulating substrate 11 is uniformly coated in the coating process; the coating jig transfers the sample from one end of the coating equipment to the other end through a rotating and transmitting mechanism on the CVD coating equipment.

The mixed solution is sucked up by a suction pump and atomized by an ultrasonic atomizing head, and is uniformly dispersed in a CVD deposition area under the high-temperature heating condition; when the insulating substrate 11 reaches the atomized deposition area and the insulating substrate 11 rotates, uniformly depositing the doped tin oxide film; the thickness was about 250nm in one pass through the deposition zone. The insulating substrate 11 residence time during CVD reaction deposition is about 110 seconds per pass; if the residence time is too long (> 3 minutes), ultrasonic atomization continues, and the temperature in the deposition zone is much lower than the temperature required for the reaction (> 600 ℃ C.), the film-forming quality is poor, or film-forming is impossible.

After the primary deposition is completed, the partial area of the infrared radiation layer having reached the target thickness is subjected to an isolation treatment as needed, and specifically, the middle area of the insulating substrate 11 may be shielded from the mixed solution by using a shielding structure S1 or S2. Heating the insulating substrate to recover to a deposition temperature suitable for reaction, continuously operating to a next deposition area, heating to recover to a temperature suitable for reaction, and continuously operating to the next deposition area; the above steps are repeated, the infrared radiation layer can reach the thickness required by formation, and the thickness formed between the middle area and the end area of the infrared radiation layer is in step transition.

As shown in fig. 6-9, in one embodiment, the longest two deposition layers 12.1 and 12.2 are first deposited on the insulating substrate 11 (see fig. 7); then, the middle of the insulating base body 11 is shielded by using a short shielding structure S1, and a deposition layer 12.3 is deposited at the two ends of the insulating base body 11 (see figure 8); the final longer masking structure S2 further masks the middle of the insulating base 11, depositing a final layer of deposited layer 12.4 at both ends of the insulating base 11 (see fig. 9), thereby forming a step-like transition between the end regions and the middle region of the insulating base 11 (see fig. 10).

Finally, after the insulating substrate 11 is deposited for the last time, the insulating substrate is heated through a section of high-temperature area, the CVD deposited film is firmly combined with the insulating substrate 11, and then the insulating substrate enters a cooling area and is gradually cooled to be below 300 ℃, and the insulating substrate can be taken out of a furnace and enter the atmosphere to be directly cooled to the room temperature continuously.

Through the above steps, the preparation of the infrared radiation layer 12 is completed. The infrared radiation layer 12 was prepared to have a resistivity of about 7X 10 ^-6 Ω · m, a thickness of the middle region of about 500nm and a thickness of the end regions of about 750-1000nm. After the electrode is prepared, the resistance value is about 2 ohms, the resistivity can be controlled by doping elements and content, and the resistance value can be controlled by deposition thickness, heater size and the like.

And c, printing an electrode on the outer surface of the insulating base body and sintering at a high temperature to obtain the infrared heater.

As will be understood in conjunction with fig. 1, the conductive coating includes a first electrode 13 and a second electrode 14 disposed on the insulating base 11 at intervals, and both the first electrode 13 and the second electrode 14 are electrically connected to the infrared radiation layer 12 to feed electric power from a power supply to the infrared radiation layer 12.

The conductive coating may be a metal coating or a conductive tape, and the like, and the metal coating may include silver, gold, palladium, platinum, copper, nickel, molybdenum, tungsten, niobium, or a metal alloy material thereof.

In this example, the conductive coating is prepared using a thick film printing process. The method comprises the following specific operation steps:

firstly, printing a silver electrode thick film on an insulating substrate 11 deposited with an infrared radiation layer 12 by using a printing screen printing plate customized with an electrode pattern; a film thickness of about 10 μm to 25 μm;

then, putting the insulating substrate 11 printed with the thick-film silver electrode pattern into a sintering furnace, wherein the sintering temperature is 850-1150 ℃, and the sintering time is 3-12 hours;

and finally, testing the insulating substrate 11 of the sintered silver electrode, detecting the silver electrode film and the doped tin oxide film deposited by CVD, and screening out qualified products.

Example 3

The method for manufacturing the infrared heater of this example is different from that of example 2 in the step b, and the rest of the steps are the same.

The CVD coating process adopts online CVD coating equipment, and in application, the CVD coating equipment is CVD continuous coating equipment; the rod-shaped coating jig penetrates through the insulating substrate 11, and fixes the insulating substrate 11 at a specific position; after the coating jig is clamped on the CVD coating equipment, the jig can rotate to ensure that the outer surface of the insulating substrate 11 is coated uniformly in the coating process; the coating jig transfers the sample from one end of the coating equipment to the other end of the coating equipment through a rotating and transmitting mechanism on the CVD coating equipment; as shown in fig. 10 and 11, the coating jig further includes a plurality of jig heating units H1 to H8 that can operate independently for maintaining the entire or partial temperature of the insulating substrate 11 at a temperature required for the reaction.

The mixed solution is sucked up by a suction pump and atomized by an ultrasonic atomizing head, and is uniformly dispersed in a CVD deposition area under the high-temperature heating condition; when the insulating substrate 11 reaches the atomized deposition area and the insulating substrate 11 is rotated, the doped tin oxide film is uniformly deposited.

Referring to fig. 11, during the CVD reaction deposition process, ultrasonic atomization is continuously performed (indicated by arrows in the figure), and the jig heating units H1 to H8 are operated together so that the temperature of the insulating substrate 11 is maintained at the temperature required for the reaction (650 ℃). Referring to fig. 12, after the insulating substrate 11 stays for about 100 seconds, the thickness of the ir layer reaches about 250nm, and at this time, the operation of the jig heating units H1 and H8 may be stopped, and the jig heating units H1, H2, H7, and H8 may continue to operate. Because the ultrasonic atomization is carried out continuously, the temperature of the central area 122 of the infrared radiation layer is gradually far lower than the temperature required by the reaction (more than 600 ℃), and the film can not be formed continuously at this time; while the temperature of the

end regions

121 and 123 of the infrared radiation layer was maintained at the temperature (650 ℃) required for the reaction, film formation could be continued. After a cumulative dwell time of about 400 seconds of the insulating substrate 11, the thickness of the

end regions

121 and 123 of the infrared radiation layer reaches 1000nm. Referring to fig. 10, the thickness of the intermediate region of the infrared radiation layer is in a gradual transition with the end regions of the infrared radiation layer.

Finally, the insulating substrate 11 passes through a section of high temperature region, after being heated, the CVD deposited film is firmly combined with the insulating substrate 11, and then enters a cooling region to be gradually cooled to below 300 ℃, and then the film is taken out of the furnace and enters the atmosphere to be directly cooled to room temperature continuously.

The preparation of the infrared radiation layer 12 is completed through the above steps. The infrared radiation layer 12 was prepared to have a resistivity of about 7X 10 ^-6 Ω · m, a thickness of the middle region of about 250nm and a thickness of the end regions of about 1000nm. After the electrode is prepared, the resistance value is about 2 ohms, the resistivity can be controlled by doping elements and contents, and the resistance value can be controlled by deposition thickness, heater size and the like.

It should be noted that the above embodiment only takes one infrared heater as an example for description. In other examples, the aerosol-generating device 100 may comprise a first infrared heater and a second infrared heater configured to be independently activated to achieve the staged heating.

The structures of the first infrared heater and the second infrared heater can refer to the foregoing contents, and are not described herein again. The first and second infrared heaters may be arranged in the axial direction of the chamber a to heat different parts of the aerosol-forming substrate in the axial direction to achieve segmented heating; it may also be arranged in the circumferential direction of the chamber a to heat different parts of the aerosol-forming substrate in the circumferential direction to achieve a segmented heating.

It should be noted that the preferred embodiments of the present application are set forth in the description of the present application and the accompanying drawings, but the present application may be embodied in many different forms and is not limited to the embodiments described in the present application, which are not intended as additional limitations to the present application, which are provided for the purpose of making the present disclosure more comprehensive. Moreover, the above-mentioned technical features are combined with each other to form various embodiments which are not listed above, and all the embodiments are regarded as the scope described in the present specification; further, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the scope of the appended claims.

Claims

1. An infrared heater comprising:

the insulating substrate is made of high-temperature-resistant materials;

characterised in that, on heating the aerosol-forming substrate:

2. An infrared heater according to claim 1, wherein, in heating the aerosol-forming substrate:

3. The infrared heater of claim 1 wherein the thickness of the middle region is less than the thickness of the first end region;

4. An infrared heater according to claim 3, characterised by comprising an electrode layer formed on the infrared radiation layer, the electrode layer comprising a first electrode layer (13) and a second electrode layer (14):

the first electrode layer comprises a first conductive portion (132) coupled in sequence to couple the first end region, the middle region, and the second end region in sequence;

the second electrode layer comprises a second conductive portion (142) coupled in sequence to the second end region, the middle region, and the first end region;

5. The infrared heater as set forth in claim 1 wherein the thickness of the intermediate region is from 30 to 900nm.

6. The infrared heater as claimed in claim 1, wherein the thickness of the first end region is 500-2000nm and/or the thickness of the second end region is 500-2000nm.

7. The infrared heater of claim 1, wherein the ratio of the thickness of the middle region to the thickness of the first end region is 1 (1.10-10) and/or the ratio of the thickness of the middle region to the thickness of the second end region is 1 (1.10-10).

8. The infrared heater of claim 1, wherein the thickness between the middle region and the first end region is stepped or tapered and/or the thickness between the middle region and the second end region is stepped or tapered.

9. The infrared heater as set forth in claim 1 wherein said infrared radiation layer is deposited on the outer surface of said insulating substrate by chemical vapor deposition.

10. The infrared heater of claim 9, wherein the intermediate zone has a deposition number that is less than the deposition number of the first end zone and/or the intermediate zone has a deposition number that is less than the deposition number of the second end zone.

11. The infrared heater according to claim 9, wherein the temperature of the middle region is lower than the temperature of the first end region and/or the temperature of the middle region is lower than the temperature of the second end region during the chemical vapor deposition.

12. An aerosol-generating device, comprising: an infrared heater as claimed in any one of claims 1 to 11 and a housing assembly (6), the infrared heater being disposed within the housing assembly.

13. A method for manufacturing an infrared heater is characterized by comprising the following steps:

and depositing an infrared radiation layer on the outer surface of the insulating base body by using a chemical vapor mode.

14. The method of manufacturing an infrared heater according to claim 13, comprising:

forming an electrode layer on the infrared radiation layer, the electrode layer including a first electrode layer and a second electrode layer;

the second electrode layer comprises a second conductive part which is sequentially coupled with the second end part region, the middle region and the first end part region in a coupling mode;

15. The method of claim 13, wherein depositing the infrared radiation layer on the outer surface of the insulating substrate using a chemical vapor deposition process comprises: and performing primary deposition treatment on the insulating matrix in a chemical vapor mode, isolating the infrared radiation layer deposited on the outer surface of the partial area of the insulating matrix after the infrared radiation layer deposited on the outer surface of the partial area of the insulating matrix reaches the target thickness, performing the next deposition treatment on the insulating matrix, and repeating the steps until the infrared radiation layer deposited on the outer surface of the partial area of the insulating matrix reaches the target thickness.

16. The method of claim 13, wherein the depositing the infrared radiation layer on the outer surface of the insulating substrate by chemical vapor deposition comprises the steps of:

heating the insulating substrate so that the temperature of the insulating substrate is maintained at a deposition temperature;

and stopping heating the insulating base body in the partial area after the infrared radiation layer deposited on the outer surface of the partial area of the insulating base body reaches the target thickness.