CN115548221A - Method for reconstructing lead iodide structure by polar solvent and application - Google Patents
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002798 polar solvent Substances 0.000 title claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 31
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 150000003839 salts Chemical class 0.000 claims abstract description 5
- 230000001939 inductive effect Effects 0.000 claims abstract description 3
- 238000001953 recrystallisation Methods 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 41
- 238000002161 passivation Methods 0.000 claims description 16
- 150000004694 iodide salts Chemical group 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 11
- 239000012046 mixed solvent Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 230000005525 hole transport Effects 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 2
- HBZSVMFYMAOGRS-UHFFFAOYSA-N octylazanium;iodide Chemical compound [I-].CCCCCCCC[NH3+] HBZSVMFYMAOGRS-UHFFFAOYSA-N 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims 3
- 238000004528 spin coating Methods 0.000 abstract description 16
- 239000002904 solvent Substances 0.000 abstract description 6
- 239000012296 anti-solvent Substances 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000638 solvent extraction Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 26
- 239000010408 film Substances 0.000 description 23
- 239000000243 solution Substances 0.000 description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 20
- 239000011521 glass Substances 0.000 description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 229910006404 SnO 2 Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000000084 colloidal system Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 239000012266 salt solution Substances 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 238000009210 therapy by ultrasound Methods 0.000 description 5
- 238000007865 diluting Methods 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- UPHCENSIMPJEIS-UHFFFAOYSA-N 2-phenylethylazanium;iodide Chemical compound [I-].[NH3+]CCC1=CC=CC=C1 UPHCENSIMPJEIS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a method for constructing double-structure lead iodide by a solvent extraction method. The process for preparing the perovskite film by adopting a solvent extraction method comprises the steps of firstly depositing a lead iodide film by adopting a solution method, then dropwise adding a polar solvent to the surface of a wet lead iodide film or placing the wet film in the polar solvent, standing for 0-120 s, and removing the redundant solvent on the surface after the color of the lead iodide film is changed; finally, spin coating organic salts to react with it yields high quality films. The anti-solvent has the functions of extracting DMF and DMSO in the lead iodide wet film, inducing the recrystallization orientation of the lead iodide to change, and simultaneously obtaining loose and porous surface morphology which is beneficial to the permeation of organic salt to the interior of the lead iodide film.
Description
Technical Field
The invention belongs to the technical field of photoelectric device preparation, and particularly relates to a method for reconstructing a lead iodide structure by using a polar solvent and application of the method.
Background
In order to obtain a high-quality perovskite thin film, various methods such as a solution deposition method, a vapor-assisted deposition method, a vacuum evaporation method, and the like may be selected in the thin film preparation process. Among the above thin film deposition methods, the solution deposition method is a simple and low-cost preparation process. Solution deposition can be divided into two categories, namely one-step deposition and sequential deposition. In order to obtain high quality perovskite films, anti-solvents are typically used in a one-step spin-coating process. However, rapid crystallization of perovskite films is difficult to control, which makes the morphology and flatness of perovskite films difficult to control. In addition, the process window period for one-step deposition is short, and nucleation and crystallization occur instantaneously, so that the film is less reproducible and vice versa. This has been confirmed in previous experiments. The two-step deposition method is considered to be a more reliable method for growing high-quality perovskite thin films because it is easier to control the crystallization process of the perovskite thin films, and is one of the feasible methods for producing large-area thin films.
However, the two-step deposition method PbI 2 SnO prone to flatness 2 The formation of a dense film on the film prevents the penetration of organic salts into the regular PbI 6 In an octahedral framework. In addition, the compact perovskite layer hinders diffusion of the organic salt solution into the interior of the lead iodide layer due to expansion of the crystal volume, resulting in PbI 2 The particles accumulate at the bottom. Although it has a positive defect-passivating effect on the photoelectric conversion efficiency, the long-term stability of the device is significantly reduced.
Accordingly, the present invention provides a method of reconstructing lead iodide structures that prevents lead iodide from forming dense crystals and its use in perovskite solar cells.
Disclosure of Invention
In order to solve the technical problems, the invention provides a method for reconstructing a lead iodide structure by using a polar solvent and application thereof. The perovskite thin film is used as a photoactive layer, the photoelectric conversion efficiency of the prepared perovskite solar cell can reach 23% under the condition of not using any additive, and the unencapsulated device is N 2 And the efficiency can still be kept more than 80 percent after 1400 hours of storage in the air.
In order to achieve the technical purpose, the invention is realized by the following technical scheme:
a method for reconstructing a lead iodide structure by using a polar solvent, which comprises the following steps:
s1: depositing a lead iodide thin film by using a mixed solvent;
s2: extracting residual mixed solvent by using a polar solvent, and inducing recrystallization of lead iodide;
s3: and (5) annealing to remove the residual polar solvent.
Preferably, the mixed solvent in the S1 is a mixture of DMF and DMSO according to a volume ratio of 1;
preferably, the dosage of the polar solvent in the S2 is 10-1000 mu L, the processing time is 0-180S, and the rotation speed of spin coating is 2000-5000 r/min; the solubility of the lead iodide in a polar solvent is different from that of DMSO and DMF, when the polar solvent is spread on the surface of a lead iodide wet film, the DMSO and the DMF are extracted, and the lead iodide is separated out and crystallized;
preferably, the annealing temperature in the S3 is 70-100 ℃, and the annealing time is 0-5 min.
Another object of the present invention is to provide an application of a polar solvent in reconstructing a lead iodide structure in a perovskite solar cell:
the perovskite solar cell is prepared by depositing a perovskite thin film by a two-step method, reconstructing a lead iodide structure by the method, spin-coating organic salt to form the perovskite thin film, spin-coating octyl amine iodide on the surface of the perovskite thin film to prepare a two-dimensional passivation layer, spin-coating a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and depositing a silver electrode by vacuum evaporation.
The beneficial effects of the invention are:
(1) The method for reconstructing the lead iodide structure by using the polar solvent can control the crystallization performance and the morphology of the lead iodide, the prepared perovskite film has better density and less residual quantity of the lead iodide, and the method has the advantages of simple process, low cost, good repeatability and strong practicability, and is suitable for large-area films and large-scale batch processing treatment;
(2) The perovskite thin film reconstructed by the method of the invention is taken as a light active layer to prepareThe prepared perovskite solar cell has the photoelectric conversion efficiency of 23% under the condition of not using any additive, and the unencapsulated device is N 2 And the efficiency can still be kept more than 80% after 1400 hours of storage in the air.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is an XRD spectrum of a perovskite thin film in example 1 of the present invention;
FIG. 2 is a surface topography of a lead iodide thin film in example 1 of the present invention;
FIG. 3 is an XRD spectrum of a lead iodide thin film in example 1 of the present invention;
FIG. 4 is a current density-voltage curve for a perovskite solar cell prepared with ethyl acetate post-treated lead iodide in example 1 of the present invention;
fig. 5 is an environmental stability test of a perovskite solar cell prepared with ethyl acetate post-treated lead iodide in example 1 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
ITO/glass is used as a substrate, and a glass cleaning agent, deionized water, ethanol, acetone, isopropanol and ethanol are sequentially subjected to ultrasonic treatment for 15min. The substrate was blow-dried with dry air, followed by UV-ozone treatment for 20min. Quality score to be purchasedSnO of 20wt% 2 Adding appropriate amount of aqueous colloid solution into clean glass bottle, adding ultrapure water according to a certain proportion, diluting into 2.5 wt% colloid solution, ultrasonic vibrating for 30min, and filtering. SnO 2 Deposition parameters of the electron transport layer: 4000rpm,20s, and annealing at 180 ℃ for 20min. The perovskite thin film is deposited by adopting a two-step method. Firstly, pbI is added 2 、PbCl 2 And dissolving the CsI in a mixed solvent DMF and DMSO, and heating and stirring until the CsI is dissolved. Applying a spin coating method on SnO 2 Depositing a lead iodide film on the electron transport layer, then dropwise adding a polar solvent Ethyl Acetate (EA) to the surface of the film, standing for a period of time, and removing the redundant solvent. Subsequently, an organic salt solution was dropwise added to the surface of the porous lead iodide thin film to spin-coat at a rate of 1700 revolutions for 30 seconds to obtain a perovskite thin film. The XRD pattern of the perovskite thin film is shown in figure 1. And (3) spin-coating octyl ammonium iodide on the surface of the perovskite thin film to prepare a two-dimensional passivation layer. Octyl amine chloride was dissolved in isopropanol solution at a concentration of 2mg/ml and spin-coated at 5000 revolutions for 15s. And depositing a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and oxidizing for 12-24h in dry air. Silver electrodes were deposited to a thickness of about 100 nm.
The EA post-treated lead iodide in the case starts to recrystallize and separate out under the action of a polar solvent to form a porous morphology, the crystallization performance of the lead iodide is also obviously changed, and the surface morphology and the XRD (X-ray diffraction) pattern of the lead iodide are shown in figures 2 and 3. The highest efficiency of the perovskite solar cell prepared by the lead iodide thin film is 23.18 percent as shown in figure 4, and the specific parameters are as follows: short-circuit current J sc :24.72mA/cm 2 Open circuit voltage V oc :1.148V and a fill factor FF:82.06%. Unpackaged cell in N 2 And the efficiency of maintaining more than 80% when the food is stored for 1400h in air with the humidity of 45% + -10% is shown in figure 5.
Example 2
ITO/glass is used as a substrate, and glass cleaning agent, deionized water, ethanol, acetone, isopropanol and ethanol are sequentially subjected to ultrasonic treatment for 15min. The substrate was blow-dried with dry air, followed by UV-ozone treatment for 20min. SnO with the mass fraction of 20wt% is purchased 2 Adding proper amount of aqueous colloid solution into clean glass bottle, and adding into glass bottleDiluting with pure water to 2.5 wt% of colloidal solution, ultrasonic vibrating for 30min, and filtering. SnO 2 Deposition parameters of the electron transport layer: 4000rpm,20s, and annealing at 180 ℃ for 20min. The perovskite thin film is deposited by adopting a two-step method. Firstly, pbI is added 2 、PbCl 2 And dissolving the CsI in a mixed solvent DMF and DMSO, and heating and stirring until the CsI is dissolved. Applying a spin coating method on SnO 2 Depositing a lead iodide film on the electron transport layer, then dropwise adding a polar solvent Isopropanol (IPA) to the surface of the film, standing for a period of time, and removing the redundant solvent. Subsequently, an organic salt solution was dropwise added to the surface of the porous lead iodide thin film dropwise at a rate of 1700 revolutions for 30 seconds to obtain a perovskite thin film. And (3) spin-coating phenethyl ammonium iodide on the surface of the perovskite thin film to prepare a two-dimensional passivation layer. Phenethyl ammonium iodide was dissolved in isopropanol at a concentration of 2mg/ml and spin-coated at 5000 revolutions for 15s. And depositing a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and oxidizing for 12-24h in dry air. Silver electrodes were deposited to a thickness of about 100 nm.
The maximum efficiency of the perovskite solar cell prepared by the IPA-treated lead iodide thin film is 23.02%. The efficiency of the unpackaged cell can be maintained above 82% after the unpackaged cell is stored for 1500 hours in air with the humidity of 45% +/-10%.
Example 3
ITO/glass is used as a substrate, and glass cleaning agent, deionized water, ethanol, acetone, isopropanol and ethanol are sequentially subjected to ultrasonic treatment for 15min. The substrate was blow-dried with dry air, followed by UV-ozone treatment for 20min. Purchasing 20wt% of SnO 2 Adding appropriate amount of aqueous colloid solution into clean glass bottle, adding ultrapure water according to a certain proportion, diluting into 2.5 wt% colloid solution, ultrasonic vibrating for 30min, and filtering. SnO 2 Deposition parameters of the electron transport layer: 4000rpm,20s, and annealing at 180 ℃ for 20min. The perovskite film is deposited by a two-step method. Firstly, pbI is added 2 、PbCl 2 And dissolving the CsI in a mixed solvent DMF and DMSO, and heating and stirring until the CsI is dissolved. In SnO by spin coating method 2 Depositing a lead iodide film on the electron transport layer, then dropwise adding a polar solvent Chlorobenzene (CB) to the surface of the film, standing for a period of time, and removing the redundant solvent.
Subsequently, an organic salt solution was dropwise added to the surface of the porous lead iodide thin film to spin-coat at a rate of 1700 revolutions for 30 seconds to obtain a perovskite thin film. And (3) carrying out spin coating on the surface of the perovskite thin film to prepare a two-dimensional passivation layer. Octyl amine iodide was dissolved in isopropanol solution at a concentration of 2mg/ml and spin-coated at 5000 revolutions for 15s. And depositing a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and placing the two-dimensional passivation layer in dry air for oxidation for 12-24h. Silver electrodes were deposited to a thickness of about 100 nm.
The maximum efficiency of the perovskite solar cell prepared by the CB-treated lead iodide thin film described in the present case is 23.4%. The efficiency of the unpackaged cell can be maintained above 80% after the unpackaged cell is stored for 1500 hours in air with the humidity of 45% +/-10%.
Example 4
ITO/glass is used as a substrate, and glass cleaning agent, deionized water, ethanol, acetone, isopropanol and ethanol are sequentially subjected to ultrasonic treatment for 15min. The substrate was blow-dried with dry air, followed by UV-ozone treatment for 20min. SnO with the mass fraction of 20wt% is purchased 2 Placing the aqueous colloid solution into a clean glass bottle, adding ultrapure water according to a certain proportion, diluting to 2.5 wt% colloid solution, ultrasonic vibrating for 30min, and filtering. SnO 2 Deposition parameters of the electron transport layer: 4000rpm,20s, and annealing at 180 ℃ for 20min. And depositing the lead iodide film by a solution method. Firstly, pbI is added 2 Dissolving in mixed solvent DMF and DMSO, heating and stirring until dissolving. Applying a spin coating method on SnO 2 Depositing a lead iodide film on the electron transport layer, then taking a polar solvent toluene to be dripped on the surface of the film, standing for a period of time, and removing redundant solvent. Subsequently, an organic salt solution was dropwise added to the surface of the porous lead iodide thin film to spin-coat at a rate of 1700 revolutions for 30 seconds to obtain a perovskite thin film. And (3) carrying out spin coating on the surface of the perovskite thin film to prepare a two-dimensional passivation layer. Octyl amine iodide was dissolved in isopropanol solution at a concentration of 2mg/ml and spin-coated at 5000 revolutions for 15s. And depositing a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and placing the two-dimensional passivation layer in dry air for oxidation for 12-24h. Silver electrodes were deposited to a thickness of about 100 nm.
The perovskite solar cell prepared from the lead iodide thin film treated by the methylbenzene has the highest efficiency of 23.04%. The efficiency of the unpackaged battery can still be kept above 85% after the unpackaged battery is stored for 1500 hours in air with the humidity of 45% +/-10%.
Example 5
ITO/glass is used as a substrate, and a glass cleaning agent, deionized water, ethanol, acetone, isopropanol and ethanol are sequentially subjected to ultrasonic treatment for 15min. The substrate was blow-dried with dry air, followed by UV-ozone treatment for 20min. SnO with the mass fraction of 20wt% is purchased 2 Placing the aqueous colloid solution into a clean glass bottle, adding ultrapure water according to a certain proportion, diluting to 2.5 wt% colloid solution, ultrasonic vibrating for 30min, and filtering. SnO 2 Deposition parameters of the electron transport layer: 4000rpm,20s, and annealing at 180 ℃ for 20min. And depositing the lead iodide film by a solution method. Firstly, pbI is added 2 Dissolving in mixed solvent DMF and DMSO, heating and stirring until dissolving. Applying a spin coating method on SnO 2 Depositing a lead iodide film on the electron transport layer, transferring the lead iodide film to the outside of the glove box, and taking deionized water (H) 2 O) is dripped on the surface of the film, and after standing for a period of time, the redundant solvent on the surface is removed. Subsequently, an organic salt solution was dropwise added to the surface of the porous lead iodide thin film dropwise at a rate of 1700 revolutions for 30 seconds to obtain a perovskite thin film. And (3) carrying out spin coating on the surface of the perovskite thin film to prepare a two-dimensional passivation layer. Octyl amine iodide was dissolved in isopropanol solution at a concentration of 2mg/ml and spin-coated at 5000 revolutions for 15s. And depositing a Spiro-OMeTAD hole transport layer on the surface of the two-dimensional passivation layer, and oxidizing for 12-24h in dry air. Silver electrodes were deposited to a thickness of about 100 nm.
The perovskite solar cell prepared by the lead iodide thin film subjected to water treatment in the embodiment has the highest efficiency of 22.8%. The efficiency of the unpackaged cell can be maintained above 86% after the unpackaged cell is stored for 1500 hours in air with the humidity of 45% +/-10%.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand the invention for and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (6)
1. The method for reconstructing the lead iodide structure by using the polar solvent is characterized by comprising the following steps of:
s1: depositing a lead iodide thin film by using a mixed solvent;
s2: extracting residual mixed solvent by using a polar solvent, and inducing recrystallization of lead iodide;
s3: and annealing to remove the residual polar solvent.
2. The method for reconstructing a lead iodide structure by using a polar solvent according to claim 1, wherein the mixed solvent in S1 is a mixture of DMF and DMSO in a volume ratio of 1.
3. The method for reconstructing the structure of lead iodide as claimed in claim 1, wherein the amount of the polar solvent used in S2 is 10-1000 μ L, the treatment time of the polar solvent is 0-180S, and the spin speed is 2000-5000 r/min.
4. The method for reconstructing lead iodide structure according to claim 1, wherein the annealing temperature in S3 is 70-100 ℃ and the annealing time is 0-5 min.
5. The method for reconstructing a lead iodide structure with a polar solvent according to any one of claims 1 to 4, wherein the method is applied to perovskite solar cells.
6. The method for reconstructing the lead iodide structure by using the polar solvent as claimed in claim 5, wherein the specific application method comprises: the perovskite thin film is deposited by a two-step method, the lead iodide structure is reconstructed by the method, then organic salt is coated in a spinning mode to form the perovskite thin film, octyl ammonium iodide is coated on the surface of the perovskite thin film in a spinning mode to prepare a two-dimensional passivation layer, a cyclone-OMeTAD hole transport layer is deposited on the surface of the two-dimensional passivation layer in a spinning mode, and a silver electrode is deposited by vacuum evaporation to prepare the perovskite solar cell.
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