CN115548217A - Perovskite solar cell and preparation method and application thereof - Google Patents
Perovskite solar cell and preparation method and application thereof Download PDFInfo
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Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a perovskite solar cell and a preparation method and application thereof, wherein the perovskite solar cell comprises a passivated light-absorbing layer; the passivating light absorption layer is an Sn-Pb perovskite light absorption layer treated by a passivating agent; the passivating agent is selected from halide salt of trifluoromethyl phenethylamine. The perovskite solar cell provided by the invention can effectively improve the long-term stability and the comprehensive performance. The invention also provides a preparation method and application of the perovskite solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method and application thereof.
Background
The perovskite solar cell is a third-generation solar cell, and an organic-inorganic hybrid perovskite material is adopted as a light absorption layer. The perovskite solar cell has the advantages of high absorption coefficient, high carrier mobility, low exciton binding energy, adjustable band gap and the like, so that the perovskite solar cell becomes a research focus in the photovoltaic field. At present, the photoelectric efficiency of the perovskite solar cell exceeds 25%, and the perovskite solar cell can be comparable to the solar cells of crystalline silicon, copper indium gallium selenide and the like, and is a powerful competitor of the next-generation solar cell.
Although the photoelectric conversion efficiency of perovskite solar cells has been refreshed in recent years, the ultimate efficiency of a single-section perovskite solar cell is limited by the shokrill-quinetise limit. In order to further improve the photoelectric conversion efficiency of perovskite solar cells, researchers have proposed tandem solar cells, i.e., solar cells including both wide and narrow bandgap solar cells. The band gap range of the tin-lead (Sn-Pb) perovskite is 1.6-1.2 eV, and the tin-lead (Sn-Pb) perovskite is an ideal choice as a light absorption material of a narrow band gap solar cell. Despite the considerable effort in recent years to improve the performance of narrow bandgap Sn-Pb perovskite solar cells, the development of high performance all-perovskite tandem solar cells remains limited to narrow bandgap Sn-Pb perovskite solar cells. Therefore, the development of high-performance Sn-Pb perovskite solar cells is of great significance.
The main problem of the Sn-Pb perovskite solar cell is Sn 2+ The oxidation and perovskite crystallization rates of (a) are not uniform, and the defects caused by both aspects greatly limit the performance and long-term stability of the device.
Therefore, it is desirable to improve the performance, especially the long-term stability, of Sn — Pb perovskite solar cells as much as possible.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a perovskite solar cell which can effectively improve the long-term stability and the comprehensive performance of the perovskite solar cell.
The invention also provides a preparation method of the perovskite solar cell.
The invention also provides an application of the perovskite solar cell.
According to an embodiment of a first aspect of the invention, there is provided a perovskite solar cell comprising a passivated light-absorbing layer;
the passivation light absorption layer is an Sn-Pb perovskite light absorption layer treated by a passivating agent;
the passivating agent comprises a compound shown in a formula (1);
wherein, X in the formula (1) - Selected from Cl - 、Br - And I - At least one of (1).
According to the perovskite solar cell provided by the embodiment of the invention, at least the following beneficial effects are achieved:
the research of the invention finds that the root cause of the poor performance of the traditional Sn-Pb perovskite solar cell in the aspects of long-term stability and the like is as follows: sn (tin) 2+ Compared with Pb 2+ The perovskite thin film has stronger Lewis acidity, is faster in coordination with organic ions in a precursor solution, leads to higher perovskite crystallization speed, has poor quality, small grain size and porous holes, increases the defects in the perovskite, and is easier for water and oxygen to invade the perovskite to cause damage; furthermore, sn 2+ The material is easy to oxidize, and oxidation causes generation of Sn vacancy, increases trap density and causes serious non-radiative recombination.
The research of the invention finds that the molecules with polarity can form dipoles with the surface of the Sn-Pb perovskite light absorption layer, thereby being beneficial to charge transmission of the perovskite solar cell, and the strength of the polarity of the molecules indirectly influences the bonding capacity of the passivation and the surface of the Sn-Pb perovskite light absorption layer.
The passivating agent (hereinafter referred to as CF) selected by the invention 3 -PEAX), including all isomers thereof, having suitable polarity to form a dipole with the surface of the Sn-Pb perovskite light-absorbing layer, which acts to promote charge transport; CF 3 PEAX can be reacted with PbI in Sn-Pb perovskite light-absorbing layer 2 Combined to form two-dimensional perovskite and reduce Sn-Pb calciumThe defect state density of the surface of the titanium ore light absorption layer inhibits the non-radiative recombination of the interface. In addition, in the passivation absorption layer provided by the invention, the adopted passivating agent can passivate defects in perovskite to avoid further deterioration, and meanwhile, the Sn-Pb perovskite light absorption layer treated by the passivating agent can reduce the contact of the Sn-Pb perovskite light absorption layer with air and avoid oxygen to Sn 2+ Which also reduces the defect density to some extent. And further, the open-circuit voltage, the short-circuit current and the fill factor of the obtained perovskite solar cell are improved, and the photoelectric conversion efficiency is improved.
Therefore, the passivation light absorption layer is formed by regulating and controlling the polarity of the passivating agent, the performance of the Sn-Pb perovskite light absorption layer is optimized, and the photoelectric conversion efficiency and stability of the obtained perovskite solar cell can be improved finally.
According to some embodiments of the invention, the component of the Sn-Pb perovskite light absorbing layer comprises ASn x Pb 1-x X 3 Wherein A is at least one of Cs, FA and MA; x is more than 0 and less than 1; x is at least one of I and Br.
According to some embodiments of the invention, the ASn x Pb 1-x X 3 Wherein X is selected from I or a mixture of I and Br.
According to some embodiments of the invention, the ASn x Pb 1-x X 3 In (A), cs, FA and MA are included.
According to some embodiments of the invention, the ASn x Pb 1-x X 3 In the specification, x is more than 0.4 and less than 0.6.
According to some preferred embodiments of the invention, the component of the Sn-Pb perovskite light absorption layer comprises Cs 0.025 FA 0.475 MA 0.5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 。
According to some embodiments of the invention, the passivated light absorbing layer has a thickness of 500 to 600nm.
According to some embodiments of the invention, in the compound of formula (1), -CF 3 and-C 2 H 4 -NH 3 The relative position of X is one of ortho-position, meta-position and para-position.
According to some embodiments of the invention, X in the compound of formula (1) - Is selected from I-.
According to some embodiments of the invention, in the compound of formula (1), X - And other structures through ionic bonds.
According to some embodiments of the invention, the compound of formula (1) comprises 4-trifluoromethylphenethylamine hydroiodide (4-CF) 3 -PEAI), 3-trifluoromethylphenethylamine hydroiodide (3-CF) 3 -PEAI) and 2-trifluoromethylphenethylamine hydroiodide (2-CF) 3 -PEAI).
According to some embodiments of the invention, the perovskite solar cell comprises an electrically conductive substrate, the passivated light absorbing layer, an electron transport layer and a metal electrode, arranged in sequence one above the other.
According to some embodiments of the invention, the conductive substrate comprises ITO glass in which the ITO coated side is in contact with the passivated absorbing layer.
Thus, the glass layer of the ITO glass is used as a substrate, and the ITO coating is used as an anode of the perovskite solar cell.
According to some embodiments of the invention, the electron transport layer is prepared from a starting material comprising a fullerene derivative;
preferably, the material of the electron transport layer is selected from [6,6] -phenyl-C61-butyl acid methyl ester (fullerene derivative, hereinafter referred to as PCBM).
In the invention, through the Sn-Pb perovskite light absorption layer treated by the passivating agent, the energy level of the obtained passivated light absorption layer is changed (which is equivalent to the generation of a two-dimensional perovskite with a more stable partial structure), so that the energy level of the light absorption layer is more matched with that of the electron transport layer, and the light absorption layer is favorable for the charge transport capability of carriers.
According to some embodiments of the invention, a material of the metal electrode comprises at least one of Cu and Ag.
According to some embodiments of the invention, the metal electrode has a thickness of 80 to 120nm.
According to some embodiments of the invention, the perovskite solar cell further comprises a hole blocking layer disposed between the electron transport layer and the metal electrode.
According to some embodiments of the present invention, the hole blocking layer is prepared from a raw material including zirconium acetylacetonate (zrac).
According to some embodiments of the invention, the perovskite solar cell is a trans-solar cell device.
In the present invention, the energy level of the ITO coating is about-4.7 eV;
preferably, the energy level of the Sn-Pb perovskite light absorption layer is-4 to-5.26 eV;
preferably, the energy level of the passivated light absorbing layer is between-4.16 and-5.42 eV.
Preferably, the energy level of the electron transport layer is-4.2 to-6.0 eV.
Preferably, the energy level of the hole blocking layer is-1.29 to-4.39 eV.
Preferably, the energy level of the metal electrode is about-4.35V.
In the perovskite solar cell provided by the invention, the Sn-Pb perovskite light absorption layer is processed by the passivating agent, and the obtained passivated light absorption layer is matched with the conductive substrate, the electron transmission layer and the metal electrode to form a complete trans-solar cell device according to a reasonable cell device structure. The perovskite solar cell has high stability while guaranteeing photoelectric properties, and can provide a technical basis for future commercial development.
According to an embodiment of the second aspect of the invention, a method for manufacturing the perovskite solar cell is proposed, the method comprising the steps of:
and (3) spin-coating an organic solution of a compound shown in the formula (1) on one side surface of the Sn-Pb perovskite light absorption layer to form the passivated light absorption layer.
According to some embodiments of the invention, the preparation method further comprises spin-coating a precursor solution on the surface of the conductive substrate to form the Sn-Pb perovskite light absorption layer before spin-coating the organic solution of the compound represented by formula (1).
According to some preferred embodiments of the present invention, the preparation method comprises the steps of:
s1, spin-coating a precursor solution on the surface of a conductive substrate to form the Sn-Pb perovskite light absorption layer;
s2, spin-coating an organic solution of the compound shown in the formula (1) on the surface of one side, away from the conductive substrate, of the part obtained in the step S1 to form the passivated light absorption layer.
According to some embodiments of the invention, the preparation method further comprises pretreating the conductive substrate before step S1.
Preferably, the pretreatment method comprises the steps of sequentially carrying out ultrasonic cleaning on the conductive substrate by using a cleaning agent, deionized water, acetone and ethanol;
preferably, after the ultrasonic cleaning, drying and ultraviolet irradiation treatment are further performed on the conductive substrate.
According to some embodiments of the invention, in step S1, the concentration of the precursor solution is 1.2 to 1.4mol/L.
According to some embodiments of the invention, in step S1, the solvent of the precursor solution comprises at least one of Chlorobenzene (CB), N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and Isopropanol (IPA).
According to some preferred embodiments of the present invention, in step S1, the solvent of the precursor solution comprises N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO).
Further preferably, the volume ratio of DMF to DMSO is 3 to 5, preferably 4.
According to some embodiments of the invention, in step S1, the precursor solution is prepared by mixing cesium bromide (CsBr), formamidine Ammonium Iodide (FAI), methyl Ammonium Iodide (MAI), stannous halide and lead iodide (PbI) 2 ) Mixed with the solvent of the precursor solution according to the stoichiometric ratio.
The stoichiometric ratio represents the feeding according to the components in the Sn-Pb perovskite light absorption layer.
According to some embodiments of the invention, the stannous halide comprises stannous iodide (SnI) 2 ) And stannous fluoride (SnF) 2 )。
According to some embodiments of the invention, the spin coating process further comprises applying an anti-solvent in step S1.
According to some embodiments of the invention, the anti-solvent is selected from at least one of chlorobenzene, diethyl ether and anisole.
Preferably, the anti-solvent is used in an amount of 100-500. Mu.L.
According to some embodiments of the invention, in step S1, the spin coating is performed at a speed of 3000 to 5000rpm.
According to some embodiments of the invention, in step S1, the spin coating is performed for 30 to 60 seconds.
According to some embodiments of the invention, step S1 further comprises performing an annealing treatment after said spin coating.
According to some embodiments of the invention, the annealing of the Sn-Pb perovskite light absorbing layer (after the spin coating of step S1) is at a temperature of 80 to 90 ℃.
According to some embodiments of the invention, the annealing of the Sn-Pb perovskite light absorption layer is performed for a time period of 1 to 5min.
According to some embodiments of the invention, step S1 is performed at an ambient temperature of 23 to 28 ℃. For example, it may be about 25 ℃.
According to some embodiments of the invention, step S1 is performed with an ambient humidity of ≦ 20%. (ii) a For example, it may be about 10%.
According to some embodiments of the invention, the preparation method further comprises performing a cooling process between step S1 and step S2.
Preferably, the temperature after cooling is room temperature, i.e. 20 to 30 ℃.
According to some embodiments of the invention, in step S2, the ratio of the mass of the solute to the volume of the solvent in the organic solution is 0.1 to 2mg/mL.
According to some preferred embodiments of the present invention, in the step S2, the ratio of the mass of the solute to the volume of the solvent in the organic solution is 0.1 to 1mg/mL.
According to some embodiments of the invention, in step S2, the solvent of the organic solution comprises at least one of Chlorobenzene (CB), N-Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and Isopropanol (IPA).
According to some embodiments of the invention, in step S2, the solvent of the organic solution is selected from isopropyl alcohol (IPA).
According to some embodiments of the invention, in step S2, the spin coating is performed at a speed of 3000 to 5000rpm.
According to some embodiments of the invention, in step S2, the spin coating time is 30 to 60 seconds.
According to some embodiments of the invention, step S2 is performed at an ambient temperature of 23 to 28 ℃. For example, it may be about 25 deg.c.
According to some embodiments of the invention, step S2 is performed with an ambient humidity of ≦ 20%. For example, it may be about 10%.
According to some embodiments of the invention, step S2 further comprises performing an annealing process after the spin coating.
According to some embodiments of the present invention, the annealing of the passivated light absorbing layer (after the spin coating of step S2) is at a temperature of 80-90 ℃.
According to some embodiments of the invention, the annealing of the passivated light absorbing layer is for a time period of 1 to 5min.
According to the invention, the passivating light-absorbing layer is prepared by selecting a specific passivating agent, and the surface appearance of the thin film of the obtained passivating light-absorbing layer is obviously improved by matching with proper environmental conditions, solute and solvent ratio, annealing step and the like, so that the comprehensive performance of the obtained perovskite solar cell is improved.
According to some embodiments of the invention, the preparation method further comprises, after the step S2, sequentially disposing the electron transport layer and the metal electrode on a surface of the passivated light absorbing layer on a side away from the conductive substrate.
According to some embodiments of the invention, the method further comprises disposing the hole blocking layer between disposing the electron transport layer and a metal electrode.
According to some embodiments of the invention, the method for setting the electron transport layer comprises: spin-coating a CB solution of PCBM on the surface of the passivated light absorption layer and then annealing;
preferably, the concentration of the CB solution of the PCBM is 15-20 mg/ml;
preferably, the spin coating speed of the CB solution of the PCBM is 1000-3000 rpm;
preferably, the spin coating time of the CB solution of the PCBM is 15-30 s;
preferably, the annealing temperature of the electron transport layer is 80-90 ℃;
preferably, the annealing time of the electron transport layer is 1-5 min.
According to some embodiments of the invention, the hole blocking layer is provided by: spin coating an IPA solution of ZrACac (zirconium acetylacetonate) onto the surface of the electron transport layer;
preferably, the concentration of the IPA solution of ZrACac is 1-3 mg/ml;
preferably, the spin-coating speed of the IPA solution of ZrACac is 3000-5000 rpm;
preferably, the spin coating time of the IPA solution of ZrACac is 15-30 s.
According to some embodiments of the invention, the metal electrode is provided by thermal evaporation deposition;
preferably, the vacuum degree of the thermal evaporation deposition is less than or equal to 10 -5 Pa。
According to an embodiment of the third aspect of the invention, a use of said perovskite solar cell in the field of photovoltaic technology is proposed.
Since the application adopts all the technical solutions of the perovskite solar cell of the above embodiments, at least all the advantages brought by the technical solutions of the above embodiments are achieved.
Unless otherwise specified, the term "about" in practice of the invention means within a tolerance of + -2%, for example, about 100 is actually 100 + -2% x 100.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a GIXRD pattern of a passivated light-absorbing layer side surface of a part obtained in step D3 of example 3 of the present invention and a Sn-Pb perovskite light-absorbing layer side surface of a part obtained in step D2 of comparative example 11.
Fig. 2 is a schematic energy level diagram of the perovskite solar cell obtained in example 3 of the present invention.
FIG. 3 is a photoluminescence spectrum of the passivated absorbing layer obtained in example 3 and the Sn-Pb perovskite absorbing layer obtained in comparative example 1.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and other embodiments obtained by those skilled in the art without inventive efforts are within the protection scope of the present invention based on the embodiments of the present invention.
In the description of the present invention, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and the above, below, exceeding, etc. are understood as excluding the present numbers, and the above, below, within, etc. are understood as including the present numbers. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
Example 1
This example provides a 2-CF 3 -PEAI passivated Sn-Pb perovskite solar cell and preparation method thereof, which comprises the following steps:
(1) The perovskite solar cell structure of the embodiment is sequentially arranged in an overlapping manner:
a glass substrate;
anode: an ITO thin film;
passivating the light-absorbing layer, 2-CF 3 PEAI-passivated Cs 0.025 FA 0.475 MA 0.5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 。
Electron transport layer: a PCBM layer;
hole blocking layer: the main preparation raw material is zirconium acetylacetonate (ZrACac);
a cathode; cu layer, thickness 100nm wherein the glass substrate and the anode are integral, used in the form of ITO glass. The total thickness of the passivated light absorbing layer was 500nm.
(2) The preparation method of the perovskite solar cell comprises the following steps:
D1. treating the ITO glass: carrying out continuous multi-step ultrasonic cleaning on the glass substrate, and sequentially adding a cleaning agent, deionized water, acetone and ethanol into each ultrasonic cleaning tank; drying the substrate after ultrasonic cleaning; before use, the ITO glass substrate needs to be subjected to ultraviolet lamp irradiation treatment.
D2. Preparing a Sn-Pb perovskite light absorption layer;
d2a precursor solution preparation: cesium bromide (CsBr), formamidine Ammonium Iodide (FAI), methyl Ammonium Iodide (MAI), stannous halide and lead iodide (PbI) 2 ) Mixing with solvent according to stoichiometric ratio;
the solvent is a mixture of DMF and DMSO according to a volume ratio of 4;
the concentration of the prepared precursor solution is 1.3mol/L (Cs can be generated according to theory) 0.025 FA 0.475 MA 0. 5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 A quantity of substance(s);
spin coating Sn-Pb perovskite light absorption layer:
dripping the precursor solution obtained in the step D2a on the surface of one side of the ITO film layer of the ITO glass obtained in the step D1, and assisting with the spin-coating condition of 4000rpm and 30s;
before the spin coating is finished, 150 mu L of chlorobenzene serving as an anti-solvent is dripped on the surface of the precursor solution which is being spin coated;
d2c annealing:
and D2b, after the spin coating is finished, annealing the obtained component at 90 ℃ for 5min, and cooling to about 25 ℃ to obtain the Sn-Pb perovskite light absorption layer.
D3. Preparing a passivated light absorption layer (passivating the Sn-Pb perovskite light absorption layer);
d3a. Will 2-CF 3 PEAI dissolved in IPA, formulated as an organic solution with a concentration of 0.1 mg/mL.
D3b. Spin coating: spin-coating the organic solution obtained in the step D3a on the surface of one side of the Sn-Pb perovskite light absorption layer of the component obtained in the step D2;
the rotating speed of spin coating is 5000rpm, and the time length is 30s;
annealing at D3c: and D3b, after the spin coating is finished, annealing the obtained part for 1min at 90 ℃ (actually, the temperature of 80-90 ℃ has no obvious influence on the performance of the product), and cooling to about 25 ℃ to obtain a passivated light absorption layer (the passivated Sn-Pb perovskite light absorption layer).
D4. Preparation of other structures:
preparation of a D4a electron transport layer: dissolving PCBM in CB to obtain a solution of 20mg/ml, dropwise adding the obtained PCBM solution to one side surface of the passivated light absorbing layer of the part obtained in the step D3, performing spin coating for 30s under the condition of 2000rpm, annealing the part at 80 ℃ for 5min after the spin coating is finished, and then cooling to room temperature (about 25 ℃).
Preparation of a hole blocking layer (D4 b): dissolving ZrACac in IPA to prepare a solution of 2mg/mL; spin-coating the ZrACac solution on the surface of one side of the electronic transmission layer of the part obtained in the step D4 a; the spin speed was 5000rpm for 30s.
Preparing a D4c metal electrode: the metal electrode is mainly Cu and is in vacuum degree<10 -5 Deposited by thermal evaporation under Pa conditions to a thickness of 100nm.
Example 2
This example provides a 3-CF 3 -PEAI passivated Sn-Pb perovskite solar cell and method for making same, which differs from example 1 specifically in that:
(1) In the structure of the perovskite solar cell, a passivation light absorption layer is 3-CF 3 PEAI-passivated Cs 0.025 FA 0.475 MA 0.5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 。
(2) In the preparation method, the solute adopted in the step D3a is 3-CF 3 -PEAI。
Example 3
This example provides a 4-CF 3 -PEAI passivated Sn-Pb perovskite solar cell and method for making same, which differs from example 1 specifically in that:
(1) In the structure of the perovskite solar cell, the light absorption layer is 4-CF 3 PEAI-passivated Cs 0.025 FA 0.475 MA 0.5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 ；
(2) In the preparation method, the solute adopted in the step D3a is 4-CF 3 -PEAI。
Comparative example 1
The present comparative example provides an Sn-Pb perovskite solar cell and a method for manufacturing the same, and specifically differs from example 1 in that:
(1) In the structure of the perovskite solar cell, the light absorption layer is Cs without passivation treatment 0.025 FA 0.475 MA 0.5 Sn 0.5 Pb 0.5 I 2.975 Br 0.025 I.e. a Sn-Pb perovskite light absorbing layer.
(2) In the preparation method, the step D3 is not included, namely, the other structure of D4 is directly arranged on one side surface of the Sn-Pb perovskite light absorption layer obtained in the step D2.
Test examples
The first aspect of this experimental example tested the GIXRD (glancing XRD pattern) of the surface on one side of the passivated absorber layer of the part obtained in step D3 of example 3, and the GIXRD (glancing XRD pattern) of the surface on one side of the Sn-Pb perovskite absorber layer of the part obtained in step D2 of comparative example 1, and showed that the sample of example 3 exhibited new diffraction peaks before 10 °, indicating that: 4-CF 3 -PEAI with PbI on the perovskite surface 2 Combined to form two-dimensional perovskite, reducing perovskiteThe defect state density of the surface inhibits the non-radiative recombination of the interface. The specific results are shown in FIG. 1.
In the second aspect of the test example, the performance of the perovskite solar cell obtained in examples 1 to 3 and comparative example 1 was tested, and the specific test method was as follows:
the performances such as open-circuit voltage, short-circuit current density, filling factor, photoelectric conversion efficiency and the like are tested on a current density-voltage (J-V) characteristic curve of the battery under a simulated light source (Enlite Solar silicon Simulator SS-F5-3A) of 100 milliwatts per square centimeter of AM1.5G; measurements were made at room temperature, air (40% humidity), unpackaged, by a computer controlled Keithley 2400 source measurement unit.
The performance test of the perovskite solar cell shows that: the test results of the current density-voltage characteristic curves of the perovskite solar cells provided in examples 1 to 3 and comparative example 1 show that the current density-voltage characteristic curves are 4-CF compared to those of the other examples 3 The perovskite solar cell subjected to PEAI passivation treatment has the most excellent photoelectric property, has the open circuit voltage of 0.824V and 30.45mA/cm 2 A fill factor of 76.23% and a photoelectric conversion efficiency of 19.13%. The main reason for the improvement of photovoltaic performance is via 4-CF 3 The surface energy level of the Sn-Pb perovskite treated by PEAI is changed, the Sn-Pb perovskite treated by PEAI is more matched with the energy level of PCBM, and the transmission of charges is more facilitated, and the specific energy level ratio is shown in figure 2.
This experimental example also tested the photoluminescence tests of the examples and comparative examples using a test equipment model Edinburgh FLS980. The xenon lamp is used as a light source, and the excitation wavelength is 450nm. The sample used was a blank glass (excluding ITO layer) + perovskite + PCBM electron transport layer, and the preparation method of the test sample of example 3 differs from that of example 3 in that the ITO glass was replaced with the blank glass, excluding steps D4b and D4c. Comparative example 1 the preparation method of the test sample was different from comparative example 1 in that the ITO glass was replaced with a blank glass, excluding steps D4b and D4c. The specific test steps of the photoluminescence test are as follows: irradiating from the PCBM surface. The photoluminescence test result shows that the strength of the embodiment is lower than that of the comparison sample, which shows that the electronic transmission capability of the passivated perovskite is enhanced, the current carriers at the interface are extracted in time, the radiation recombination is reduced, and the PL strength is reduced. This test result corresponds to a better match of the energy levels in fig. 2 and a stronger electron transport capability.
In conclusion, compared with the examples, if passivation treatment is not performed, various performances of the obtained perovskite solar cell, including photoluminescence intensity and the like, are obviously reduced, because the stability of the Sn-Pb perovskite light absorption layer is reduced and the defect density is improved due to the lack of passivation treatment. The final results are shown in table 1 and fig. 3.
Table 1 statistics of the performance of the solar cells obtained in examples 1 to 3 and comparative example 1.
In conclusion, the compound shown in the formula (1) is adopted to passivate the Sn-Pb perovskite light absorption layer in the perovskite solar cell, so that the photoelectric conversion efficiency, the stability and other comprehensive properties of the obtained solar cell are obviously improved; furthermore, the perovskite solar cell is expected to have wide application prospect in the field of photovoltaic technology.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
1. A perovskite solar cell, characterized in that the perovskite solar cell comprises a passivating light absorbing layer;
the passivation light absorption layer is an Sn-Pb perovskite light absorption layer treated by a passivating agent;
the passivating agent comprises a compound shown in a formula (1);
wherein, X-in the formula (1) is selected from Cl-, br-and I - At least one of (1).
2. The perovskite solar cell of claim 1, wherein the composition of the Sn-Pb perovskite light absorbing layer comprises ASn x Pb 1-x X 3 Wherein A is at least one of Cs, FA and MA; x is more than 0 and less than 1; x is at least one of I and Br.
3. The perovskite solar cell of claim 1, wherein the passivating light absorbing layer has a thickness of 500 to 600nm.
4. The perovskite solar cell according to any one of claims 1 to 3, comprising an electrically conductive substrate, the passivated light absorbing layer, an electron transport layer and a metal electrode, arranged in a sequence superimposed.
5. A method of manufacturing a perovskite solar cell as defined in any one of claims 1 to 4, characterized in that the method of manufacturing comprises the steps of:
and (3) spin-coating an organic solution of a compound shown in the formula (1) on one side surface of the Sn-Pb perovskite light absorption layer to form the passivated light absorption layer.
6. The method as claimed in claim 5, further comprising disposing the electron transport layer and the metal electrode on the surface of the passivated light absorbing layer facing away from the conductive substrate.
7. The method according to claim 5, further comprising spin-coating a precursor solution on the surface of the conductive substrate to form the Sn-Pb perovskite light-absorbing layer before spin-coating an organic solution of the compound represented by formula (1); preferably, the concentration of the precursor solution is 1.2-1.4 mol/L;
preferably, the spin coating process of the precursor solution further comprises applying an anti-solvent.
8. The method according to claim 7, further comprising performing an annealing treatment on the spin-coated precursor solution.
9. The method according to claim 5 or 6, wherein the organic solution has a mass to solvent volume ratio of 0.1 to 2mg/mL;
preferably, the preparation method further comprises performing an annealing treatment after spin-coating the organic solvent.
10. Use of a perovskite solar cell as defined in any one of claims 1 to 4 in the field of photovoltaic technology.
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| CN116514667A (en) * | 2023-04-21 | 2023-08-01 | 华中科技大学 | Perovskite surface defect passivation material and perovskite solar cell prepared from same |
| CN116669444A (en) * | 2023-05-25 | 2023-08-29 | 南京大学 | Inverse perovskite solar cell and preparation method thereof |
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| CN116514667A (en) * | 2023-04-21 | 2023-08-01 | 华中科技大学 | Perovskite surface defect passivation material and perovskite solar cell prepared from same |
| CN116669444A (en) * | 2023-05-25 | 2023-08-29 | 南京大学 | Inverse perovskite solar cell and preparation method thereof |
| CN116669444B (en) * | 2023-05-25 | 2024-03-19 | 南京大学 | Inverse perovskite solar cell and preparation method thereof |
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