CN115542660A - Correction method of nano-imprint micro-pore mask based on dry etching process - Google Patents
Correction method of nano-imprint micro-pore mask based on dry etching process Download PDFInfo
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- CN115542660A CN115542660A CN202211181081.0A CN202211181081A CN115542660A CN 115542660 A CN115542660 A CN 115542660A CN 202211181081 A CN202211181081 A CN 202211181081A CN 115542660 A CN115542660 A CN 115542660A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000012937 correction Methods 0.000 title claims abstract description 24
- 238000001312 dry etching Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title claims abstract description 21
- 239000011148 porous material Substances 0.000 title claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000003292 glue Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
The invention discloses a correction method of a nano-imprint micro-pore mask based on a dry etching process, which comprises the following steps: the method comprises the following steps: obtaining a pattern mask with a micropore structure by using a nanoimprint method; step two: correcting the microporous structure on the pattern mask obtained in the first step by using a dry etching process method to obtain a corrected pattern mask; step three: and etching the pattern mask corrected in the second step. According to the invention, a dry etching process method is utilized, before a main etching step, a step of further correcting is added for a pattern mask which is nanoimprinted and has a micropore structure, the micropore structure is corrected, and a better mask shape is obtained to etch a target pattern of a substrate.
Description
Technical Field
The invention belongs to the technical field of semiconductor preparation, and particularly relates to a correction method of a nano-imprint micro-pore mask based on a dry etching process.
Background
With the continuous development and progress of micro-nano processing technology, the nano-imprinting technology breaks through the difficult problem of the traditional photoetching in the process of reducing the characteristic dimension, and has the characteristics of high resolution, low cost and high yield. The method is widely applied to the fields of micro-nano processing, such as semiconductor manufacturing, MEMS, biochips and the like.
Nanoimprinting differs from conventional optical lithography in that the structures are replicated by means of both physical and UV illumination. In view of the characteristics of the mask manufactured by the nanoimprint technology, the deformation of the soft mold and the shrinkage property of the imprint glue during the mask manufacturing process can cause that the pattern of the mask cannot fully reproduce the image on the hard mold, and especially the appearance of the micropore structure is more difficult to completely reproduce. In the subsequent etching process, the etching process system is usually established directly according to the properties of the substrate material, so that the copying effect of the target pattern is distorted due to the difference of the masks.
Disclosure of Invention
In order to solve the technical problem, the invention provides a correction method of a nano-imprinting micropore mask based on a dry etching process.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention discloses a correction method of a nano-imprinting micropore mask based on a dry etching process, which comprises the following steps:
the method comprises the following steps: obtaining a pattern mask with a micropore structure by using a nano-imprinting method;
step two: correcting the microporous structure on the pattern mask obtained in the first step by using a dry etching process method to obtain a corrected pattern mask;
step three: and etching the pattern mask corrected in the second step.
On the basis of the technical scheme, the following improvements can be made:
as a preferred scheme, the step one specifically comprises the following steps: coating a layer of nano-imprinting glue on the surface of the substrate, and carrying out nano-imprinting by using a template with the size of a target pattern so as to copy and transfer the mask of the target pattern on the substrate.
Preferably, in step two, O is used 2 And CHF 3 Plasma pairAnd correcting the micropore structure on the pattern mask.
Preferably, in the second step, the correction is performed by using an ICP etching apparatus.
Preferably, in the second step, O is input into the ICP dry etching equipment 2 The gas flow range is 50-100sccm 3 The gas flow range is 5-30 sccm.
Preferably, in step two, O 2 And CHF 3 The flow ratio of (2) is 5:1 to 10:1.
preferably, in the second step, the power range of the upper electrode in the ICP dry etching equipment is 150-1000W, the power range of the lower electrode is 50-300W, the regulation and control range of the internal pressure is 2.8-7 mT, the regulation and control range of the cooling temperature is 5-40 ℃, and the emphasis and control range of the He gas pressure is 3-8T.
The invention discloses a correction method of a nanoimprint micropore mask based on a dry etching process.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a flowchart of a correction method according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of a patterned mask before modification according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of a modified patterned mask according to an embodiment of the present invention.
Fig. 4 is an experimental diagram of a pattern mask before correction according to an embodiment of the present invention.
Fig. 5 is an experimental diagram of a modified pattern mask according to an embodiment of the present invention.
Wherein: 1-substrate, 2-nanoimprint glue and 3-micropore structure.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The use of the ordinal terms "first," "second," "third," etc., to describe a common object merely indicate that different instances of like objects are being referred to, and are not intended to imply that the objects so described must be in a given sequence, either temporally, spatially, in ranking, or in any other manner.
Additionally, the expression "comprising" an element is an "open" expression that merely indicates the presence of a corresponding component or step and should not be interpreted as excluding additional components or steps.
In order to achieve the object of the present invention, in some embodiments of a correction method for a nanoimprint micro-hole mask based on a dry etching process, as shown in fig. 1, the correction method comprises the steps of:
the method comprises the following steps: obtaining a pattern mask with a micropore structure by using a nanoimprint method, as shown in fig. 2;
step two: correcting the microporous structure 3 on the pattern mask obtained in the first step by using a dry etching process method to obtain a corrected pattern mask, as shown in fig. 3;
step three: and etching the pattern mask corrected in the second step.
In order to further optimize the implementation effect of the present invention, in other embodiments, the remaining features are the same, except that the step one specifically includes the following contents: coating a layer of nano-imprinting glue 2 on the surface of a substrate 1, and carrying out nano-imprinting by using a template with a target pattern size so as to copy and transfer a mask of the target pattern on the substrate.
In order to further optimize the implementation effect of the invention, in other embodiments, the rest of the feature technologies are the same, except that in the second step, O is used 2 And CHF 3 The plasma modifies the microporous structure on the patterned mask.
In the conventional micropore structure etching, plasma is difficult to enter the inside of the hole, and the inner side wall is difficult to modify. In the dry etching process, CHF is adopted in the application 3 Gas, CHF 3 The gas can generate a rapid reaction with the side wall of the pattern of the mask, and plays a role in a transverse reaction in the process of modifying the mask.
In CHF 3 And O 2 In the reaction process with the pattern mask, hydrogen ions play a combustion-supporting role, carbon ions play a role in depositing, covering and protecting the top of the mask, and oxygen ions play a role in oxygen burning of the whole mask. Thus, CHF 3 And O 2 The transverse modification effect on the mask is obvious, and CHF is adjusted 3 The proportion of the first and second mask layers can well control the effect of the lateral modification of the mask, and therefore the purpose of correcting the mask is achieved.
Further, in the second step, correction is performed by using an ICP etching apparatus.
Taking MAXIS 380ICP etching equipment as an example, in the second step, O is input in the ICP dry etching equipment 2 The gas flow range is 50-100sccm 3 The gas flow range is 5-30 sccm.
In the second step, O is controlled according to the difference between the mask pattern and the final substrate pattern 2 And CHF 3 Flow ratio of (5): 1 to 10: and 1, controlling the horizontal and longitudinal etching speeds of the mask, etching a better mask appearance, and then performing a main etching process.
In the second step, the power range of an upper electrode in the ICP dry etching equipment is 150-1000W, the power range of a lower electrode is 50-300W, the regulation and control range of internal pressure is 2.8-7 mT, the regulation and control range of cooling temperature is 5-40 ℃, and the emphasis and control range of He pressure is 3-8T.
In some embodiments, mask correction is performed using a MAXIS 380ICP etching apparatus, and experimental graphs before and after correction are shown in fig. 4 and 5.
The invention discloses a correction method of a nanoimprint micropore mask based on a dry etching process.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "front", "center", "both ends", and the like are used in the orientations and positional relationships indicated in the drawings only for the convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "disposed," "connected," "secured," "screwed" and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
While there have been shown and described what are at present considered to be the fundamental principles of the invention and its essential features and advantages, it will be understood by those skilled in the art that the invention is not limited by the embodiments described above, which are merely illustrative of the principles of the invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
The control mode of the invention is controlled by manually starting and closing the switch, the wiring diagram of the power element and the supply of the power source belong to the common knowledge in the field, and the invention is mainly used for protecting mechanical devices, so the control mode and the wiring arrangement are not explained in detail in the invention.
Claims (7)
1. A correction method of a nano-imprint micro-pore mask based on a dry etching process is characterized by comprising the following steps:
the method comprises the following steps: obtaining a pattern mask with a micropore structure by using a nanoimprint method;
step two: correcting the microporous structure on the pattern mask obtained in the first step by using a dry etching process method to obtain a corrected pattern mask;
step three: and etching the pattern mask corrected in the second step.
2. The correction method according to claim 1, wherein the first step specifically comprises the following steps: coating a layer of nano-imprinting glue on the surface of the substrate, and carrying out nano-imprinting by using a template with the size of a target pattern so as to copy and transfer the mask of the target pattern on the substrate.
3. The correction method according to claim 1 or 2, wherein in the second step, O is used 2 And CHF 3 The plasma modifies the microporous structure on the patterned mask.
4. The correction method according to claim 3, characterized in that in the second step, correction is performed using an ICP etching apparatus.
5. The correction method according to claim 4, wherein in the second step, O is inputted in the ICP dry etching apparatus 2 The gas flow range is 50-100sccm 3 The gas flow range is 5-30 sccm.
6. The correction method according to claim 5, characterized in that, in the step two, O 2 And CHF 3 The flow ratio of (2) is 5:1 to 10:1.
7. the correction method according to claim 5, wherein in the second step, the power range of the upper electrode in the ICP dry etching equipment is 150-1000W, the power range of the lower electrode is 50-300W, the regulation and control range of the internal pressure is 2.8-7 mT, the regulation and control range of the cooling temperature is 5-40 ℃, and the emphasis control range of the He gas pressure is 3-8T.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211181081.0A CN115542660A (en) | 2022-09-27 | 2022-09-27 | Correction method of nano-imprint micro-pore mask based on dry etching process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211181081.0A CN115542660A (en) | 2022-09-27 | 2022-09-27 | Correction method of nano-imprint micro-pore mask based on dry etching process |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070100420A (en) * | 2005-02-03 | 2007-10-10 | 램 리써치 코포레이션 | Method for reducing critical dimensions using multiple masking steps |
| CN102910579A (en) * | 2012-09-26 | 2013-02-06 | 华中科技大学 | Nanoimprinting method capable of improving depth-to-width ratio of graph and product thereof |
| TW201409534A (en) * | 2012-05-15 | 2014-03-01 | Tokyo Electron Ltd | Sidewall image transfer method for low aspect ratio patterns |
| CN103984204A (en) * | 2014-05-22 | 2014-08-13 | 苏州锦元纳米科技有限公司 | Preparation method of lubricating film |
| CN113721421A (en) * | 2021-07-30 | 2021-11-30 | 苏州光舵微纳科技股份有限公司 | Machining method of nano-imprinting structure |
-
2022
- 2022-09-27 CN CN202211181081.0A patent/CN115542660A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070100420A (en) * | 2005-02-03 | 2007-10-10 | 램 리써치 코포레이션 | Method for reducing critical dimensions using multiple masking steps |
| TW201409534A (en) * | 2012-05-15 | 2014-03-01 | Tokyo Electron Ltd | Sidewall image transfer method for low aspect ratio patterns |
| CN102910579A (en) * | 2012-09-26 | 2013-02-06 | 华中科技大学 | Nanoimprinting method capable of improving depth-to-width ratio of graph and product thereof |
| CN103984204A (en) * | 2014-05-22 | 2014-08-13 | 苏州锦元纳米科技有限公司 | Preparation method of lubricating film |
| CN113721421A (en) * | 2021-07-30 | 2021-11-30 | 苏州光舵微纳科技股份有限公司 | Machining method of nano-imprinting structure |
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