CN115529029A - Voltage comparator circuit - Google Patents
Voltage comparator circuit Download PDFInfo
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- CN115529029A CN115529029A CN202110709321.9A CN202110709321A CN115529029A CN 115529029 A CN115529029 A CN 115529029A CN 202110709321 A CN202110709321 A CN 202110709321A CN 115529029 A CN115529029 A CN 115529029A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
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Abstract
The invention discloses a voltage comparator circuit, comprising: the voltage-current conversion module is used for converting the voltage difference between the first input voltage and the second input voltage into a current signal; the current bias module is used for obtaining a first bias current according to the band gap reference current; and the current comparison module is used for comparing the current signal with the first bias current so as to output an output signal representing the voltage difference between the first input voltage and the second input voltage, thereby avoiding the use of a voltage division circuit, being beneficial to reducing the power consumption of the circuit and improving the comparison precision.
Description
Technical Field
The invention relates to the technical field of high-voltage comparison, in particular to a voltage comparator circuit.
Background
The conventional portable electronic products and wearable electronic equipment, such as smart phones, tablet computers, smart watches and the like, adopt rechargeable batteries to provide power for the system, so that the system can still work normally when no external power supply is connected; when the battery is not powered, the battery is charged by an external power supply, and the system is powered by the external power supply. Therefore, battery Management chips (Power Management Integrated Circuits) are very important for these portable electronic products.
In a power management chip, it is necessary in some cases to compare two voltage values of high voltage and output the comparison result for a relevant logical judgment. For example, a Low Dropout Regulator (LDO), the power management chip often needs to select a voltage at the BUS or SYS as a supply voltage of the internal LDO, so that the LDO converts the supply voltage at the supply end into an operating voltage of a subsequent circuit. The traditional method is to divide the voltage of the BUS end and the SYS end, compare the divided voltage values and use the end with higher voltage as the power supply end of the LDO, and the method has the defects that the power consumption of the voltage dividing circuit is in direct proportion to the voltage value of the high voltage, the loss is larger, and in addition, the comparison by using the divided signal can reduce the comparison precision, which is not beneficial to the realization of a high-precision power management chip.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a voltage comparator circuit, which converts a voltage difference between input voltages into current information for comparison, thereby avoiding the use of a voltage divider circuit, facilitating the reduction of circuit power consumption, and improving comparison accuracy.
According to an embodiment of the present invention, there is provided a voltage comparator circuit including: the voltage-current conversion module is used for converting the voltage difference between the first input voltage and the second input voltage into a current signal; the current bias module is used for obtaining a first bias current according to the band gap reference current; and a current comparison module for comparing the current signal with the first bias current to output an output signal indicative of a voltage difference between the first input voltage and the second input voltage.
Optionally, the current comparison module is configured to output an output signal of a logic high level if the current signal is less than the first bias current.
Optionally, the voltage comparator circuit further includes: a hysteresis module to provide a second bias current to the current comparison module if the output signal is a logic high level, wherein the current comparison module is configured to flip if the current signal is greater than a current sum of the first bias current and the second bias current to output a logic low level output signal.
Optionally, the voltage comparator circuit further includes: and the high-voltage clamping module is connected between the voltage-current conversion module and the current bias module and is used for protecting a low-voltage transistor in the current bias module.
Optionally, the pressure-flow converting module includes: the first resistor, the first transistor and the second transistor are sequentially connected between the first input voltage and the high-voltage clamping module; and a second resistor, a third transistor, a third resistor and a fourth transistor sequentially connected between the second input voltage and the high voltage clamping module, wherein the first transistor and the third transistor are connected in a diode structure, control terminals of the second transistor and the fourth transistor are connected with each other and with a second terminal of the second transistor, and the second terminal of the fourth transistor is used for outputting the current signal.
Optionally, the pressure-to-flow conversion module further includes: and the anode of the voltage stabilizing diode is connected with the control ends of the second transistor and the fourth transistor, and the cathode of the voltage stabilizing diode is connected with the first end of the fourth transistor.
Optionally, the high voltage clamping module includes: a first clamping tube, wherein a first end of the first clamping tube is connected with a second end of the second transistor, a control end of the first clamping tube is connected with a power supply voltage, and a second end of the first clamping tube is connected with the current bias module; and a first end of the second clamping tube is connected with a second end of the fourth transistor, a control end of the second clamping tube is connected with the power supply voltage, and a second end of the second clamping tube is connected with the current bias module.
Optionally, the current bias module includes fifth to eighth transistors, wherein a first terminal of the fifth transistor is connected to the bandgap reference current, a second terminal of the fifth transistor is grounded, sixth to eighth transistors are connected to a control terminal of the fifth transistor and connected to the first terminal of the fifth transistor to be connected to be a current mirror, a second terminal of the sixth to eighth transistors is grounded, a first terminal of the sixth transistor is connected to the current comparison module to provide a bias current to the current comparison module, a first terminal of the seventh transistor is connected to the second terminal of the first clamp, and a first terminal of the eighth transistor and a second terminal of the second clamp are connected to a current comparison point to provide the first bias current.
Optionally, the hysteresis module includes: a ninth transistor which is connected with the fifth transistor to form a current mirror, and the second end of the ninth transistor is grounded; and a tenth transistor having a first terminal connected to the current comparison point to provide the second bias current, a second terminal connected to the first terminal of the ninth transistor, and a control terminal connected to the output signal.
Optionally, the current comparing module includes: an eleventh transistor having a first terminal connected to the power supply voltage and a second terminal connected to a first terminal of the sixth transistor; a twelfth transistor, a first terminal of which is connected to the power supply voltage, and a control terminal of which is connected to the control terminal and the second terminal of the eleventh transistor; a first end of the output transistor is connected with a second end of the twelfth transistor, a control end of the output transistor is connected with the current comparison point, and a second end of the output transistor is grounded; and a first inverter and a second inverter sequentially connected between an intermediate node of the twelfth transistor and the output transistor and an output terminal.
Optionally, the first to fourth transistors and the eleventh to twelfth transistors are respectively selected from PMOS transistors, and the first clamp, the second clamp, the output transistor and the fifth to tenth transistors are respectively selected from NMOS transistors.
The voltage comparator circuit of the embodiment converts the voltage difference between the input voltages into the current signal, and compares the current signal with the bias current to obtain the magnitude relation between the input voltages, and the power consumption of the circuit is mainly determined by the mirror current of the current mirror and is irrelevant to the voltage value of the input end, so that the power consumption of the circuit can be greatly reduced. In addition, the voltage difference between the input voltages is converted into a current signal, the voltage of the two input ends is indirectly compared, the use of a voltage division circuit can be avoided, and the improvement of the comparison precision is facilitated.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 shows a schematic circuit diagram of a voltage comparator circuit according to an embodiment of the invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
It should be understood that in the following description, a "circuit" refers to a conductive loop formed by at least one element or sub-circuit through an electrical or electromagnetic connection. When an element or circuit is referred to as being "connected to" another element or element/circuit is referred to as being "connected between" two nodes, it may be directly coupled or connected to the other element or intervening elements may be present, and the connection between the elements may be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled" or "directly connected" to another element, it is intended that there are no intervening elements present.
In this application, the MOS transistor includes a first terminal, a second terminal, and a control terminal, and in an on state of the MOS transistor, a current flows from the first terminal to the second terminal. The first end, the second end and the control end of the PMOS transistor are respectively a source electrode, a drain electrode and a grid electrode, and the first end, the second end and the control end of the NMOS transistor are respectively a drain electrode, a source electrode and a grid electrode.
Fig. 1 shows a schematic circuit diagram of a voltage comparator circuit according to an embodiment of the invention. As shown in fig. 1, the voltage comparator circuit 100 includes a voltage-to-current conversion module 101, a current bias module 102, a current comparison module 103, a hysteresis module 104, and a high voltage clamp module 105. The voltage-to-current conversion module 101 is configured to convert a voltage difference between a first input voltage VIN1 and a second input voltage VIN2 into a current signal IR. The current bias module 102 is configured to obtain a first bias current I1 according to the bandgap reference current Ib. The current comparing module 103 is configured to compare the current signal IR with the first bias current I1 to output an output signal Vout representing a voltage difference between the first input voltage VIN1 and the second input voltage VIN2, and when the current signal IR is smaller than the first bias current I1, the current comparing module 103 outputs the output signal Vout with a logic high level. The hysteresis module 104 is used for providing the second bias current I2 to the current comparison module 103 when the output signal Vout is at a logic high level, and when the current signal IR is greater than the sum of the first bias current I1 and the second bias current I2, the output of the current comparison module 103 is inverted again to output the output signal Vout at a logic low level. The high voltage clamp module 105 is connected between the voltage-to-current conversion module 101 and the current bias module 102 for protecting the low voltage transistors in the current bias module 102.
Optionally, the voltage-to-current conversion module 101 includes resistors R1 and R2, transistors MD1 and MD2, a resistor R3, transistors MP1 and MP2, and a zener diode D1. First ends of the resistors R1 and R2 are respectively connected to the first input voltage VIN1 and the second input voltage VIN2, a second end of the resistor R1 is connected to a first end of the transistor MD1, a second end of the resistor R2 is connected to a first end of the transistor MD2, and control ends of the transistors MD1 and MD2 are connected to the second ends to respectively connect into a diode structure. The first terminal of the transistor MP1 and the second terminal of the transistor MD1 are connected to the node a, and the second terminal is connected to the high voltage clamping module 105. The first terminal of the resistor R3 and the second terminal of the transistor MD2 are connected to the node C, the second terminal and the first terminal of the transistor MP2 are connected to the node B, the control terminal of the transistor MP2 and the control terminal of the transistor MP1 are both connected to the second terminal of the transistor MP1, and the second terminal of the transistor MP2 is connected to the high voltage clamp module 105. The anode of the zener diode D1 is connected to the control terminal of the transistor MP2, and the cathode thereof is connected to the first terminal of the transistor MP 2.
The current bias block 102 includes transistors MN1 to MN4. The first end of the transistor MN1 is connected with the band-gap reference current Ib, the control end is connected with the first end, and the second end is grounded. The transistors MN2 to MN4 are connected to the transistor MN1 to form a current mirror structure, so that a bias current for supplying a working current to the voltage-to-current conversion module 101 and the current comparison module 103 is obtained according to the bandgap reference current Ib. Specifically, the control terminal of the transistor MN2 is connected to the control terminal of the transistor MN1, the first terminal is connected to the current comparing module 103 to provide the bias current to the current comparing module 103, and the second terminal of the transistor MN2 is grounded. The control end of the transistor MN3 is connected to the control end of the transistor MN1, the first end is connected to the high voltage clamp module 105 to provide a bias current I3 to the transistor MP1 through the high voltage clamp module 105, and the second end is grounded. The control terminal of the transistor MN4 is connected to the control terminal of the transistor MN1, the first terminal is connected to the high voltage clamp module 105 to provide the bias current I1 to the transistor MP2 through the high voltage clamp module 105, and the second terminal is grounded.
High-voltage clamp module 105 includes clamp tubes MC1 and MC2, and clamp tubes MC1 and MC 2's control end is connected with mains voltage VDD, and clamp tube MC 1's first end is connected with transistor MP 1's second end, and clamp tube MC 1's second end is connected with transistor MN 3's first end, and clamp tube MC 2's first end is connected with transistor MP 2's second end, and clamp tube MC 2's second end is connected with transistor MN 4's first end. The transistors MC1 and MC2 are high voltage transistors, and can protect the low voltage transistors MN3 and MN4 in the current bias module 102.
The current comparing module 103 includes transistors MP3 and MP4, an output tube MR, and inverters INV1 and INV2. First ends of the transistors MP3 and MP4 are connected to the power supply voltage VDD, control ends of the transistors MP3 and MP4 are connected to each other and both connected to a second end of the transistor MP3, a second end of the transistor MP3 is further connected to the first end of the transistor MN2 to receive the bias current, a second end of the transistor MP4 is connected to the first end of the output tube MR, a control end of the output tube MR is connected to a current comparison point between the high voltage clamp module 105 and the current bias module 102, and a second end is grounded. The input end of the inverter INV1 is connected to the intermediate node of the transistor MP4 and the output tube MR, the output end of the inverter INV1 is connected to the input end of the inverter INV2, and the output end of the inverter INV2 is used for outputting the output signal Vout.
The hysteresis module 104 includes transistors MN5 and MS. The transistor MN5 is connected to the transistor MN1 to form a current mirror, the second terminal is grounded, the first terminal is connected to the second terminal of the transistor MS, the control terminal of the transistor MS is connected to the output terminal of the inverter INV2 to receive the output signal Vout, and the first terminal is connected to the current comparison point.
The transistors MD1, MD2, and MP1 to MP4 in the above embodiment are implemented by PMOS transistors, respectively, and the clamp transistors MC1 and MC2, the output tube MR, and the transistors MS and MN1 to MN5 are implemented by NMOS transistors, respectively. The resistors R1 and R2 are ESD (Electro-Static discharge) resistors, and the transistors MD1 and MD2 are used for placing current to be inversely injected into the input ends of the first input voltage VIN1 and the second input voltage VIN 2.
Since the bias currents I1 and I3 are equal, the gate-source voltages Vgs of the transistors MP1 and MP2 are equal, so that the voltage VA at the node a is equal to the voltage VB at the node B, assuming that the forward voltage drops of the MOS diodes MD1 and MD2 are VD, and the current signal IR is smaller than the bias current I1 in the initial state, the output signal Vout is a logic high level, the transistor MS is turned on, and since the resistance of the ESD resistor is much smaller than the resistance of the resistor R3, the influence of the ESD resistors R1 and R2 can be ignored, and then:
VA＝VIN1-VD (1)
VC＝VIN2-VD (2)
where VA represents the voltage of node a, VC represents the voltage of node C, and can be obtained by combining equation (1) and equation (2), and the current signal IR is:
since the gate voltage of the output transistor MR is pulled high when the current signal IR is greater than the sum of the currents of the bias current I1 and the bias current I2, the output signal Vout is inverted to a logic low level, and thus the inversion point of the voltage comparator circuit of this embodiment is:
VIN1-VIN2>(I1+I2)×R3 (4)
when the output signal Vout is flipped to a logic low level, the transistor MS is turned off, removing the bias current I2, and thus the flipped point of the voltage comparator flipped high can be obtained as follows:
VIN1-VIN2<I1×R3 (5)
by using a larger resistor R3 and a smaller bias current I2, the error between the transistors MP1 and MP2 due to the addition of the current I2 can be reduced.
In summary, the voltage comparator circuit of the present embodiment converts the voltage difference between the input voltages into the current signal, and compares the current signal with the bias current to obtain the magnitude relationship between the input voltages, and the power consumption of the circuit is mainly determined by the mirror current of the current mirror and is independent of the voltage value of the input terminal, so that the power consumption of the circuit can be greatly reduced. In addition, the voltage difference between the input voltages is converted into a current signal, the voltage of the two input ends is indirectly compared, the use of a voltage division circuit can be avoided, and the improvement of the comparison precision is facilitated.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (11)
1. A voltage comparator circuit comprising:
the voltage-current conversion module is used for converting the voltage difference between the first input voltage and the second input voltage into a current signal;
the current bias module is used for obtaining a first bias current according to the band gap reference current; and
a current comparison module for comparing the current signal with the first bias current to output an output signal indicative of a voltage difference between the first input voltage and the second input voltage.
2. The voltage comparator circuit of claim 1, the current comparison module configured to output an output signal of a logic high level if the current signal is less than the first bias current.
3. The voltage comparator circuit of claim 2 further comprising:
a hysteresis module to provide a second bias current to the current comparison module if the output signal is a logic high level,
wherein the current comparison module is configured to flip to output an output signal of a logic low level if the current signal is greater than a current sum of the first bias current and the second bias current.
4. The voltage comparator circuit of claim 3 further comprising:
and the high-voltage clamping module is connected between the voltage-current conversion module and the current bias module and is used for protecting a low-voltage transistor in the current bias module.
5. The voltage comparator circuit of claim 4 wherein the voltage to current conversion module comprises:
the first resistor, the first transistor and the second transistor are sequentially connected between the first input voltage and the high-voltage clamping module; and
a second resistor, a third transistor, a third resistor, and a fourth transistor connected in sequence between the second input voltage and the high voltage clamp module,
wherein the first transistor and the third transistor are connected in a diode structure,
the control ends of the second transistor and the fourth transistor are connected with each other and with the second end of the second transistor, and the second end of the fourth transistor is used for outputting the current signal.
6. The voltage comparator circuit of claim 5 wherein the voltage-to-current conversion module further comprises:
and the anode of the voltage stabilizing diode is connected with the control ends of the second transistor and the fourth transistor, and the cathode of the voltage stabilizing diode is connected with the first end of the fourth transistor.
7. The voltage comparator circuit of claim 5 wherein the high voltage clamp module comprises:
a first clamping tube, wherein a first end of the first clamping tube is connected with a second end of the second transistor, a control end of the first clamping tube is connected with a power supply voltage, and a second end of the first clamping tube is connected with the current bias module; and
and a first end of the second clamping tube is connected with a second end of the fourth transistor, a control end of the second clamping tube is connected with the power supply voltage, and a second end of the second clamping tube is connected with the current bias module.
8. The voltage comparator circuit of claim 7 wherein the current bias module includes fifth through eighth transistors,
wherein a first terminal of the fifth transistor is connected with the bandgap reference current, a second terminal is grounded,
the sixth transistor to the eighth transistor are connected with the control end of the fifth transistor and the first end of the fifth transistor so as to be connected into a current mirror, the second ends of the sixth transistor to the eighth transistor are grounded,
a first terminal of the sixth transistor is connected to the current comparison module to provide a bias current to the current comparison module,
a first end of the seventh transistor is connected with the second end of the first clamping tube,
the first end of the eighth transistor and the second end of the second clamping tube are connected to a current comparison point to provide the first bias current.
9. The voltage comparator circuit of claim 8 wherein the hysteresis module comprises:
a ninth transistor, which is connected with the fifth transistor to form a current mirror, and the second end of which is grounded; and
a tenth transistor having a first terminal connected to the current comparison point to provide the second bias current, a second terminal connected to the first terminal of the ninth transistor, and a control terminal connected to the output signal.
10. The voltage comparator circuit of claim 9 wherein the current comparison module comprises:
an eleventh transistor having a first terminal connected to the power supply voltage and a second terminal connected to a first terminal of the sixth transistor;
a twelfth transistor, a first terminal of which is connected to the power supply voltage, and a control terminal of which is connected to the control terminal and the second terminal of the eleventh transistor;
a first end of the output transistor is connected with a second end of the twelfth transistor, a control end of the output transistor is connected with the current comparison point, and a second end of the output transistor is grounded; and
and the first inverter and the second inverter are sequentially connected between the output end and an intermediate node of the twelfth transistor and the output transistor.
11. The voltage comparator circuit according to claim 10, wherein the first to fourth transistors and the eleventh and twelfth transistors are respectively selected from PMOS transistors,
the first clamp tube, the second clamp tube, the output transistor and the fifth to tenth transistors are respectively selected from NMOS transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110709321.9A CN115529029A (en) | 2021-06-25 | 2021-06-25 | Voltage comparator circuit |
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| CN202110709321.9A CN115529029A (en) | 2021-06-25 | 2021-06-25 | Voltage comparator circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116827320A (en) * | 2023-07-27 | 2023-09-29 | 江苏润石科技有限公司 | Fast-response self-adaptive power supply conversion circuit |
| CN117614423A (en) * | 2024-01-23 | 2024-02-27 | 杭州芯正微电子有限公司 | High-voltage input high-speed voltage comparator |
-
2021
- 2021-06-25 CN CN202110709321.9A patent/CN115529029A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116827320A (en) * | 2023-07-27 | 2023-09-29 | 江苏润石科技有限公司 | Fast-response self-adaptive power supply conversion circuit |
| CN116827320B (en) * | 2023-07-27 | 2024-01-26 | 江苏润石科技有限公司 | Fast-response self-adaptive power supply conversion circuit |
| CN117614423A (en) * | 2024-01-23 | 2024-02-27 | 杭州芯正微电子有限公司 | High-voltage input high-speed voltage comparator |
| CN117614423B (en) * | 2024-01-23 | 2024-03-29 | 杭州芯正微电子有限公司 | High-voltage input high-speed voltage comparator |
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