CN115527574A - Quick reading method, device and equipment based on nonvolatile memory and storage medium - Google Patents
Quick reading method, device and equipment based on nonvolatile memory and storage medium Download PDFInfo
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Abstract
The application discloses a quick reading method, a quick reading device, equipment and a storage medium based on a nonvolatile memory, which relate to the technical field of memories and comprise the steps of obtaining preset address information of data to be read in the memory and decoding the preset address information to obtain preset decoding information; determining a corresponding memory cell address based on the preset decoding information; detecting the storage state of each storage unit in the memory, and judging whether the storage state of each storage unit is normal or not; if the address of the storage unit is in the preset selected address, adjusting the threshold value of a preset reference value to obtain a dynamic judgment reference value; loading an input signal to the storage unit to acquire a judgment signal output by the storage unit; and comparing the numerical range of the judgment signal output by the storage unit with the dynamic judgment reference value, and reading out the data content stored in the storage unit. The method and the device have the effect of improving the accuracy of judging the content of the stored data.
Description
Technical Field
The present application relates to the field of memory technologies, and in particular, to a method, an apparatus, a device, and a storage medium for fast reading based on a nonvolatile memory.
Background
The memory is mainly divided into two main categories, namely, volatile memory (Volatile memory) and Non-Volatile memory (Non-Volatile memory). The access speed of the volatile memory is high, but after the power-off, the data stored in the volatile memory will be lost completely. Conversely, the non-volatile memory may maintain data even when shut down. Therefore, the nonvolatile memory is widely used in electronic products such as cameras and computers.
When reading data from a memory, a memory reading circuit is usually used to load a voltage or a current to a memory cell in the memory, and the stored data in the memory cell is determined by comparing the numerical range of the current or the voltage output by the memory cell with the numerical value of a reference value. The larger the numerical difference between the numerical range of the current or voltage output by the storage unit and the reference value, the more accurate and rapid the judgment of the stored data content.
However, the range of the current or voltage output by the same memory cell may vary. After the nonvolatile memory is erased for many times, the resistance values of the resistors and the like in the memory unit change after long-term use, so that the numerical difference between the numerical range of the current or voltage output by the memory unit and the reference value may become smaller and smaller, errors are easy to occur in the judgment of the stored data content, and further errors occur in the data read by the memory.
Disclosure of Invention
In order to improve the accuracy of judging the content of stored data, the application provides a quick reading method, a quick reading device, a quick reading equipment and a storage medium based on a nonvolatile memory.
The fast reading method, device, equipment and storage medium based on the nonvolatile memory provided by the application adopt the following technical scheme:
in a first aspect, the present application provides a fast reading method based on a non-volatile memory, which adopts the following technical solution:
the fast reading method based on the nonvolatile memory comprises the following steps:
acquiring preset address information of data to be read in a memory, and decoding the preset address information to acquire preset decoding information;
determining a corresponding memory cell address based on the preset decoding information;
detecting the storage state of each storage unit in a memory, and judging whether the storage state of each storage unit is normal or not;
if the address of the storage unit is in the preset selected address, adjusting the threshold value of a preset reference value to obtain a dynamic judgment reference value;
loading an input signal to the storage unit to acquire a judgment signal output by the storage unit;
and comparing the numerical range of the judgment signal output by the storage unit with the dynamic judgment reference value, and reading out the data content stored in the storage unit.
Preferably, the step of obtaining preset address information of the data to be read in the memory and decoding the preset address information to obtain preset decoding information includes:
acquiring preset address information of data to be read in a memory;
and decoding the preset address information to obtain preset decoding information.
Preferably, the step of detecting the storage state of each memory specifically includes:
setting data of each of the memories to a value of zero;
inputting a detection signal to each storage unit to obtain a feedback signal parameter value;
calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data;
if the ratio data is larger than one, screening out the ratio data with the ratio larger than one to obtain a corresponding fault storage unit address;
and if the ratio data are all smaller than one, the storage states of the storage units are all normal.
Preferably, the step of detecting the storage state of each memory specifically includes:
setting the data of each of the memories to a value;
inputting detection signals to each storage unit to obtain feedback parameter data;
calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data;
if the ratio data is smaller than one, screening out the ratio data with the ratio smaller than one, and acquiring a corresponding fault storage unit address;
and if the ratio data are all larger than one, the storage states of the storage units are all normal.
Preferably, if the address of the storage unit is in the preset selected address, the step of adjusting the threshold of the preset reference value to obtain the dynamic judgment reference value specifically includes:
determining that the storage state of each storage unit is normal;
the dynamic judgment reference value comprises a first judgment reference value;
and if the ratio data are all smaller than one, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the first judgment reference value.
Preferably, the dynamic judgment reference value further includes a second judgment reference value;
and when the ratio data are all larger than one, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the second judgment reference value.
Preferably, the step of loading the input signal to the storage unit to obtain the determination signal output by the storage unit includes:
loading an input signal to the memory cell based on a sensing circuit, wherein the input signal is configured as an input current;
and outputting a judgment signal after the processing of the storage unit, wherein the judgment signal is configured to judge the current.
In a second aspect, the present application provides a fast reading apparatus based on a non-volatile memory, which adopts the following technical solutions:
the quick reading device based on the nonvolatile memory comprises a decoding unit, a reading unit and a control unit, wherein the decoding unit is configured to be used for acquiring preset address information of data to be read in the memory and decoding the preset address information to obtain preset decoding information;
the detection unit is configured to detect the storage state of each storage unit in the memory and judge whether the storage state of each storage unit is normal or not;
the adjusting unit is configured to adjust a threshold of a preset reference value to obtain a dynamic judgment reference value;
a readout unit configured to acquire the determination signal output by the storage unit;
and the judging unit is configured to compare the numerical range of the judging signal output by the storage unit with the dynamic judging reference value and read out the data content stored in the storage unit.
In a third aspect, the present application provides a fast reading apparatus based on a non-volatile memory, which adopts the following technical solution:
the quick reading device based on the nonvolatile memory comprises the quick reading device based on the nonvolatile memory.
In a fourth aspect, the present application provides a computer-readable storage medium, which adopts the following technical solutions:
a computer-readable storage medium, on which computer instructions are stored, the computer-readable storage medium being a non-volatile storage medium or a non-transitory storage medium, and the computer instructions when executed perform the steps of the non-volatile memory-based fast reading method described above.
In summary, the present application includes at least one of the following beneficial technical effects:
the memory comprises N storage units, each storage unit outputs different feedback parameter data, and when the data required to be read is judged to exist in a designated area of the N storage units for the first time, the designated area is a storage unit of which the ratio data is in the standard ratio data allowance range. The address information of the memory unit of the data to be read is preset, and then the preset reference value is adjusted, so that the feedback parameter data output by the preset memory unit is closer to the data margin range of the standard ratio, the interference memory unit is removed, and the accuracy of the memory for reading the data is improved.
Drawings
FIG. 1 is a flow chart illustrating a method for fast reading based on a non-volatile memory according to an embodiment of the present application;
FIG. 2 is a schematic flow chart of the substeps of step S1;
FIG. 3 is a flow chart illustrating the substeps of step S3;
FIG. 4 is a schematic flow chart of the substeps of step S3;
FIG. 5 is a flow chart illustrating the substep of step S4;
FIG. 6 is a flow chart illustrating the substeps of step S5;
FIG. 7 is a schematic diagram of a fast reading apparatus based on a non-volatile memory, which is mainly embodied in the embodiment of the present application.
Description of reference numerals: 1. a decoding unit; 2. a detection unit; 3. an adjustment unit; 4. a readout unit; 5. and a judging unit.
Detailed Description
The present application is described in further detail below with reference to figures 1-7.
The embodiment of the application discloses a quick reading method based on a nonvolatile memory.
Referring to fig. 1, a fast read method based on a non-volatile memory includes the following steps:
s1, acquiring preset address information of data to be read in a memory, and decoding the preset address information to acquire preset decoding information.
Specifically, step S1 includes the following sub-steps, referring to fig. 2, S101. The method comprises the steps of obtaining information of data to be stored in advance, and searching preset address information where data corresponding to the data to be stored are located in addresses in a memory.
And S102, decoding the preset address information to obtain preset decoding information. Specifically, the decoder may be used to encode the preset address information, and store the encoded preset decoding information.
And S2, determining a corresponding storage unit address based on the preset decoding information.
And S3, detecting the storage state of each storage unit in the memory, and judging whether the storage state of each storage unit is normal or not.
Specifically, referring to fig. 3, step S3 includes the following substeps:
s301, setting the data of each storage unit to be zero values. The data stored in the memory consists of 0 or 1, and when the data is 0, the data in the corresponding memory cell is not accordant with the data to be read. When the data is 1, the data in the corresponding storage unit is consistent with the required read data.
And S302, inputting detection signals to each storage unit to obtain feedback parameter data. The detection signal may be a current and/or voltage signal, and the storage unit outputs feedback parameter data after the detection signal is input to the storage unit.
In the embodiment of the application, the feedback reference data is the voltage and/or current value output by the storage unit. It should be noted that, by applying a voltage or a current to the memory cell in the memory by using a readout circuit on the periphery of the memory, the stored data in the memory cell is determined according to the comparison between the numerical range of the current or the voltage output by the memory cell and the numerical value of the preset reference value.
And S303, calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data. Thereby obtaining the ratio relation between the feedback parameter data and the preset reference value.
S304, if the ratio data is larger than one, screening out the address of the fault storage unit corresponding to the ratio data with the ratio larger than one. When the ratio data is more than one, the feedback parameter data is more than a preset reference value, which indicates that data which is consistent with the read data exists in the storage unit, and the data is violated with the data of the storage unit, which is zero value, and the storage unit has fault or aging.
S305, if the ratio data are all smaller than one, the storage states of the storage units are all normal. The ratio data are all smaller than one, the feedback parameter data are smaller than a preset reference value, the data in the storage unit are all zero values, and the data are consistent with the preset storage data which are zero values, so that the storage state of the storage unit is normal.
Referring to fig. 4, step S3 further includes:
s306, setting the data of each memory to be one value.
S307, inputting detection signals to each storage unit to obtain feedback parameter data;
and S308, calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data. I.e. ratio data = feedback parameter data/preset reference value.
S309, if the ratio data is smaller than one, screening out the ratio data with the ratio smaller than one, and acquiring a corresponding fault storage unit address;
s310, if the ratio data are all larger than one, the storage states of the storage units are all normal.
And S4, if the address of the storage unit is in the preset selected address, adjusting the threshold value of the preset reference value to obtain a dynamic judgment reference value.
Specifically, referring to fig. 5, step S4 includes the following sub-steps:
s401, determining that the storage state of each storage unit is normal.
S402, the dynamic judgment reference value comprises a first judgment reference value.
And S403, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the first judgment reference value.
The following illustrates the dynamic adjustment process of the first judgment reference value:
the memory comprises N storage units, each storage unit outputs different feedback parameter data, and when the data required to be read is judged to exist in a designated area of the N storage units for the first time, the designated area is a storage unit of which the ratio data is within the standard ratio data allowance range. Because the address information of the memory cell of the data to be read is preset, the feedback parameter data output by the preset memory cell is closer to the data margin range of the standard ratio by adjusting the preset reference value, and the interference memory cell is eliminated.
S404, the dynamic judgment reference value further comprises a second judgment reference value.
S405, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the second judgment reference value. Similarly, the memory comprises N memory cells, each memory cell outputs different feedback parameter data, and when the data required to be read after the initial judgment exists in a designated area of the N memory cells, the designated area is a memory cell of which the ratio data is within the margin range of the standard ratio data. Because the address information of the memory cell of the data to be read is preset, the feedback parameter data output by the preset memory cell is closer to the data margin range of the standard ratio by adjusting the preset reference value, and the interference memory cell is removed.
And S5, loading an input signal to the storage unit to acquire a judgment signal output by the storage unit.
Referring to fig. 6, specifically, step S5 includes the following sub-steps:
s501, loading an input signal to the storage unit based on a readout circuit, wherein the input signal is configured to be an input current;
s502, outputting a judgment signal after the processing of the storage unit, wherein the judgment signal is configured to be a judgment current.
And S6, comparing the numerical range of the judgment signal output by the storage unit with the dynamic judgment reference value, and reading out the data content stored in the storage unit.
The embodiment of the application also discloses a quick reading device based on the nonvolatile memory.
Referring to fig. 7, the nonvolatile memory based fast reading apparatus includes:
the decoding unit 1 is configured to acquire preset address information of data to be read in a memory, and decode the preset address information to acquire preset decoding information;
the detection unit 2 is configured to detect the storage state of each storage unit in the memory and judge whether the storage state of each storage unit is normal;
the adjusting unit 3 is configured to adjust a threshold of a preset reference value to obtain a dynamic judgment reference value;
a readout unit 4 configured to acquire the determination signal output by the storage unit;
and the judging unit 5 is configured to compare the numerical range of the judging signal output by the storage unit with the dynamic judgment reference value, and read out the data content stored in the storage unit.
The embodiment of the application also discloses a quick reading device based on the nonvolatile memory, which comprises the quick reading device based on the nonvolatile memory.
The embodiment of the present application further discloses a computer-readable storage medium, on which computer instructions are stored, where the computer-readable storage medium is a non-volatile storage medium or a non-transitory storage medium, and the computer instructions are executed to perform the steps of the above-mentioned fast reading method based on a non-volatile memory when running.
It will be apparent to those skilled in the art that the modules or steps of the present invention described above may be implemented by a general purpose computing device, they may be centralized on a single computing device or distributed across a network of multiple computing devices, and alternatively, they may be implemented by program code executable by a computing device, such that they may be stored in a storage device and executed by a computing device, and in some cases, the steps shown or described may be performed in an order different than that described herein, or they may be separately fabricated into individual integrated circuit modules, or multiple ones of them may be fabricated into a single integrated circuit module. Thus, the present invention is not limited to any specific combination of hardware and software.
The above are preferred embodiments of the present application, and the scope of protection of the present application is not limited thereto, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. The quick reading method based on the nonvolatile memory is characterized by comprising the following steps of:
acquiring preset address information of data to be read in a memory, and decoding the preset address information to acquire preset decoding information;
determining a corresponding memory cell address based on the preset decoding information;
detecting the storage state of each storage unit in a memory, and judging whether the storage state of each storage unit is normal or not;
if the address of the storage unit is in the preset selected address, adjusting the threshold value of a preset reference value to obtain a dynamic judgment reference value;
loading an input signal to the storage unit to acquire a judgment signal output by the storage unit;
and comparing the numerical range of the judgment signal output by the storage unit with the dynamic judgment reference value, and reading out the data content stored in the storage unit.
2. The non-volatile memory-based fast read method according to claim 1, wherein: the step of obtaining the preset address information of the data to be read in the memory and decoding the preset address information to obtain the preset decoding information specifically includes:
acquiring preset address information of data to be read in a memory;
and decoding the preset address information to obtain preset decoding information.
3. The non-volatile memory based fast read method of claim 1, wherein: the step of detecting the storage state of each storage unit in the memory and judging whether the storage state of each storage unit is normal or not specifically comprises the following steps:
setting the data of each memory cell to a zero value;
inputting detection signals to each storage unit to obtain feedback parameter data;
calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data;
if the ratio data is larger than one, screening out the ratio data with the ratio larger than one and acquiring the corresponding address of the fault storage unit;
and if the ratio data are all smaller than one, the storage states of the storage units are all normal.
4. The non-volatile memory based fast read method of claim 3, wherein: the step of detecting the storage state of each memory specifically includes:
setting the data of each of the memories to a value;
inputting detection signals to each storage unit to obtain feedback parameter data;
calculating the ratio of each feedback parameter data to a preset reference value and obtaining ratio data;
if the ratio data is smaller than one, screening out the ratio data with the ratio smaller than one, and acquiring a corresponding fault storage unit address;
and if the ratio data are all larger than one, the storage states of the storage units are all normal.
5. The method, apparatus, device and storage medium of claim 1, wherein the step of adjusting the threshold of the predetermined reference value to obtain the dynamic judgment reference value if the address of the storage unit is within the predetermined selected address specifically comprises:
determining that the storage state of each storage unit is normal;
the dynamic judgment reference value comprises a first judgment reference value;
and if the ratio data are all smaller than one, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the first judgment reference value.
6. The non-volatile memory-based fast read method according to claim 5, wherein: the dynamic judgment reference value further comprises a second judgment reference value;
and when the ratio data are all larger than one, adjusting a threshold value of a preset reference value based on a preset algorithm to obtain the second judgment reference value.
7. The method according to claim 1, wherein the step of loading the input signal to the storage unit to obtain the determination signal output by the storage unit includes:
loading an input signal to the memory cell based on a sensing circuit, wherein the input signal is configured as an input current;
and outputting a judgment signal after the processing of the storage unit, wherein the judgment signal is configured to judge the current.
8. A fast reading device based on a nonvolatile memory is characterized by comprising:
the decoding unit (1) is configured to acquire preset address information of data to be read in a memory and decode the preset address information to acquire preset decoding information;
the detection unit (2) is configured to detect the storage state of each storage unit in the memory and judge whether the storage state of each storage unit is normal or not;
the adjusting unit (3) is configured to adjust a threshold of a preset reference value to obtain a dynamic judgment reference value;
a readout unit (4) configured to acquire the determination signal output by the storage unit;
and the judging unit (5) is configured to compare the numerical range of the judging signal output by the storage unit with the dynamic judging reference value and read out the data content stored in the storage unit.
9. Non-volatile memory based fast reading device, characterized in that it comprises a non-volatile memory based fast reading apparatus according to claim 8.
10. A computer readable storage medium having stored thereon computer instructions, the computer readable storage medium being a non-volatile storage medium or a non-transitory storage medium, wherein the computer instructions when executed perform the steps of the non-volatile memory based fast reading method according to any one of claims 1 to 7.
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