CN115516606A - Substrate liquid processing apparatus and substrate liquid processing method - Google Patents

Substrate liquid processing apparatus and substrate liquid processing method Download PDF

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Publication number
CN115516606A
CN115516606A CN202180032981.6A CN202180032981A CN115516606A CN 115516606 A CN115516606 A CN 115516606A CN 202180032981 A CN202180032981 A CN 202180032981A CN 115516606 A CN115516606 A CN 115516606A
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CN
China
Prior art keywords
liquid
line
supply
discharge nozzle
supply container
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Pending
Application number
CN202180032981.6A
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Chinese (zh)
Inventor
中岛干雄
小宫洋司
中森光则
北野淳一
南辉臣
大塚贵久
小佐井一树
尾嶋智明
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN115516606A publication Critical patent/CN115516606A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0225Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work characterised by flow controlling means, e.g. valves, located proximate the outlet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • B05C9/14Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation involving heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

Abstract

The present invention provides a technique advantageous for suppressing particles from being mixed into a processing liquid to be supplied to a substrate. The substrate liquid processing apparatus includes: a supply container to which the processing liquid is supplied via a guide line; a pressurizing device for pressurizing the inner side of the supply container; a discharge nozzle for discharging the supplied processing liquid; a supply line connected to the supply container and the discharge nozzle, and provided with no adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle; a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line; a liquid flow regulating mechanism provided in the first drain line for limiting the passage of the treatment liquid at a pressure lower than a set pressure; and a control part for adjusting the set pressure.

Description

Substrate liquid processing apparatus and substrate liquid processing method
Technical Field
The present invention relates to a substrate liquid processing apparatus and a substrate liquid processing method.
Background
A substrate liquid processing apparatus capable of suppressing particles from being mixed into a processing liquid is known. In the device of patent document 1, since it is not necessary to provide a control valve for adjusting the flow rate in the branch line, there is no possibility that particles that may be generated from the control valve flow in the liquid processing unit. The device of patent document 2 can suppress the generation of dust inside the constant pressure valve.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2015-41751
Patent document 2: japanese patent laid-open publication No. 2017-204069
Disclosure of Invention
Technical problem to be solved by the invention
The present invention provides a technique advantageous for suppressing particles from being mixed into a processing liquid to be supplied to a substrate.
Technical solution for solving technical problem
One aspect of the present invention relates to a substrate liquid processing apparatus including: a supply container to which the processing liquid is supplied via a guide line; a pressurizing device for pressurizing the inner side of the supply container; a discharge nozzle for discharging the supplied processing liquid; a supply line connected to the supply container and the discharge nozzle, and provided with no adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle; a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line; a liquid flow regulating mechanism provided in the first drain line for limiting the passage of the treatment liquid at a pressure lower than a set pressure; and a control part for adjusting the set pressure.
Effects of the invention
With the present invention, it is advantageous to suppress particles from being mixed into the processing liquid to be supplied to the substrate.
Drawings
Fig. 1 is a diagram showing an outline of an example of a processing system.
Fig. 2 is a diagram schematically showing an example of the processing unit.
Fig. 3 is a diagram showing a schematic configuration of an example of a liquid supply circuit for supplying a processing liquid to a discharge nozzle.
Fig. 4 is a diagram illustrating an example of the storage unit.
Fig. 5 is a diagram illustrating an example of the storage unit.
Fig. 6 is a diagram illustrating an example of the storage unit.
Fig. 7 is a diagram illustrating an example of the storage unit.
Fig. 8 is a diagram schematically showing a first embodiment of the treatment liquid supply system.
Fig. 9 is a schematic diagram showing a first embodiment of the treatment liquid supply system.
Fig. 10 is a diagram schematically showing a first embodiment of the treatment liquid supply system.
Fig. 11 is a diagram schematically showing a first embodiment of the processing liquid supply system.
Fig. 12 is a diagram schematically showing a second embodiment of the treatment liquid supply system.
Fig. 13 is a diagram schematically showing a second embodiment of the processing liquid supply system.
Fig. 14 is a partial sectional view for explaining an example of a heating manner in the first heating region of the guide line.
Fig. 15 is a partial sectional view for explaining an example of a heating manner in the first heating region of the guide line.
Fig. 16 is a partial sectional view for explaining an example of a heating method in the first heating region of the guide line.
Fig. 17 is a partial sectional view for explaining an example of a heating method in the first heating region of the guide line.
Fig. 18 is a schematic configuration diagram for explaining an example of a heating method in the first heating zone of the guide line.
Fig. 19 is a schematic configuration diagram for explaining an example of a heating method in the first heating zone of the guide line.
Fig. 20 is a schematic configuration diagram for explaining an example of a heating method in the first heating zone of the guide line.
Fig. 21 is a diagram schematically showing a first embodiment of the treatment liquid temperature adjustment system.
Fig. 22 is a diagram schematically showing a second embodiment of the treatment liquid temperature adjustment system.
Fig. 23 is a diagram illustrating an agitating body provided inside a supply pipe constituting a supply line.
FIG. 24 is a diagram showing an example of stirring of the treatment liquid in the supply container.
Fig. 25 is a diagram showing a configuration example of a supply container capable of suppressing temperature unevenness of a processing liquid.
Fig. 26 is a diagram showing a configuration example of a supply container capable of suppressing a temperature decrease of a processing liquid.
Detailed Description
Fig. 1 is a diagram schematically showing an example of the processing system 80. The processing system 80 shown in fig. 1 has an in-out station 91 and a processing station 92. The carry-in/out station 91 includes a placement portion 81 having a plurality of carriers C and a conveying portion 82 provided with a first conveying mechanism 83 and a delivery portion 84. A plurality of substrates W are accommodated in each carrier C in a horizontal state. The processing station 92 is provided with a plurality of processing units 10 disposed on both sides of the conveyance path 86 and a second conveyance mechanism 85 that reciprocates in the conveyance path 86.
The substrate W is taken out from the carrier C by the first conveyance mechanism 83 and placed on the delivery portion 84, and is taken out from the delivery portion 84 by the second conveyance mechanism 85. Next, the substrate W is carried into the corresponding processing unit 10 by the second transfer mechanism 85, and a predetermined liquid process (for example, a chemical liquid process) is performed in the corresponding processing unit 10. Thereafter, the substrate W is taken out from the corresponding process unit 10 by the second conveying mechanism 85, placed on the delivery portion 84, and then returned to the carrier C of the placement portion 81 by the first conveying mechanism 83.
The processing system 80 includes a control section 93. The control unit 93 is constituted by a computer, for example, and includes an arithmetic processing unit and a storage unit. The storage unit of the control unit 93 stores programs and data for various processes executed in the processing system 80. The arithmetic processing unit of the control unit 93 appropriately reads and executes the program stored in the storage unit, thereby controlling various mechanisms of the processing system 80 to perform various processes.
The program and data stored in the storage section of the control section 93 may be recorded in a computer-readable storage medium, from which the storage section is installed. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
Fig. 2 is a diagram schematically showing an example of the processing unit 10.
The processing unit 10 constitutes a substrate liquid processing apparatus together with a control unit 93 (see fig. 1), and includes a substrate holding unit 11, a rotation driving unit 12, a liquid supply unit 15, a cup-shaped structure 21, an inert gas supply unit 22, and a processing chamber 23. The substrate holding section 11, the rotation driving section 12, the liquid supply section 15, and the cup-shaped structure 21 are disposed inside the processing chamber 23. The inert gas supply unit 22 supplies an inert gas (e.g., nitrogen) into the process chamber 23.
The substrate holding unit 11 holds the substrate W supplied by the second conveyance mechanism 85 (see fig. 1). The substrate holding unit 11 shown in the figure is a vacuum type that holds the back surface of the substrate W by suction, but the substrate holding unit 11 may hold the substrate W by another method (for example, a mechanical clamping method). The rotation driving unit 12 applies a rotational power to the substrate holding unit 11 to rotate the substrate W held by the substrate holding unit 11 together with the substrate holding unit 11. The illustrated rotation driving portion 12 includes a rotation driving shaft extending on the rotation axis A1 and having the substrate holding portion 11 fixedly attached to a front end portion thereof, and a rotation driving main body portion that rotates the rotation driving shaft about the rotation axis A1. In the illustrated example, the substrate holding unit 11 and the rotation driving unit 12 constitute at least a part of a rotation mechanism 13 for rotating the substrate W about the rotation axis A1.
The liquid supply portion 15 includes a nozzle drive portion 16, a drive arm 17, and an ejection nozzle 19. The nozzle drive section 16 includes a rotary drive shaft extending on the rotation axis A2 and having a drive arm 17 fixedly attached to a front end portion thereof, and a rotary drive body section that rotates the rotary drive shaft about the rotation axis A2. A rotation drive shaft of the nozzle drive section 16 is attached to one end side of the drive arm 17, and a discharge nozzle 19 is attached to a discharge head 18 constituting the other end of the drive arm 17. The discharge nozzle 19 moves about the rotation axis A2 together with the driving arm 17 (including the discharge head 18). In the above illustration, the nozzle driving section 16 and the driving arm 17 constitute at least a part of a nozzle moving mechanism for moving the discharge nozzle 19.
The discharge nozzle 19 discharges the processing liquid supplied through a supply line (see reference numeral "L4" in fig. 3 and the like) described later. The processing liquid discharged from the discharge nozzle 19 is supplied to the substrate W held by the substrate holding portion 11 for liquid processing of the substrate W. The supply line is connected to the ejection nozzle 19 through the nozzle driving section 16 and the driving arm 17 inside the process chamber 23. The driving arm 17 provided movably can be provided with a supply ejector (liquid flow switching mechanism) (see reference numeral 69 in fig. 12 and the like) and the like, which will be described later, in addition to the discharge nozzle 19.
The specific composition and use of the treatment liquid supplied to the ejection nozzle 19 are not limited. For example, a chemical solution for changing the characteristics of the substrate W, a rinse solution for rinsing the surface of the substrate W, and a cleaning solution for cleaning the substrate W can be used as the processing solutions. The number of the discharge nozzles 19 included in the liquid supply unit 15 is not limited. Although only 1 discharge nozzle 19 is illustrated in fig. 2, the liquid supply portion 15 may have 2 or more discharge nozzles 19. For example, the ejection head 18 may be provided with an ejection nozzle 19 that ejects a chemical liquid, an ejection nozzle 19 that ejects a rinse liquid such as deionized water (DIW), and an ejection nozzle 19 that ejects a cleaning liquid (for example, IPA) for cleaning a substrate.
The cup-shaped structure 21 has an annular planar shape and is provided so as to surround the substrate W held by the substrate holding portion 11. The cup-shaped structure 21 receives the liquid splashed from the substrate W and guides the liquid to a drain pipe (not shown), or adjusts the flow of gas to prevent diffusion of the gas around the substrate W. The specific structure of the cup-shaped structural body 21 is not limited. For example, the cup-shaped structure 21 may be formed by a cup that mainly guides liquid and a cup that mainly regulates the flow of gas, separately.
The processing unit 10 may also include other mechanisms not described above. For example, an exhaust adjustment mechanism for exhausting gas from the inside of the processing chamber 23, or a liquid discharge adjustment mechanism for discharging liquid dropped (splashed) from the substrate W from the inside of the processing chamber 23 may also be provided. In addition, a heating device for heating the liquid on the substrate W to promote the liquid treatment of the substrate W may be provided.
[ liquid supply circuit ]
Fig. 3 is a schematic diagram showing an example of a liquid supply circuit 30 for supplying the processing liquid P to the discharge nozzle 19. The liquid supply circuit 30 is implemented by various components of the processing unit 10 and other components of the processing system 80.
The liquid supply circuit 30 shown in fig. 3 includes a reservoir unit 32 connected to a processing liquid supply source 31 via a reservoir line L1, a supply tank 37 connected to the reservoir unit 32 via a guide line L2, and a discharge nozzle 19 connected to the supply tank 37 via a supply line L4.
The storage unit 32 stores the processing liquid P supplied from the processing liquid supply source 31 via the storage line L1. The specific structure of the storage unit 32 is not limited. For example, the storage unit 32 may have only 1 storage container capable of storing the processing liquid P, but may have a plurality of storage containers (see fig. 4 to 7 described later). The storage line L1 is provided with a storage on-off valve 45. The storage on-off valve 45 can control the supply of the processing liquid P to the storage unit 32 by opening and closing the flow path of the storage line L1 under the control of the controller 93.
A guide on-off valve 33 and a guide filter 34 located downstream of the guide on-off valve 33 are provided in the guide line L2. The guide opening/closing valve 33 opens and closes the flow path of the guide line L2 under the control of the control unit 93. The guide filter 34 removes foreign matter from the processing liquid P while passing the processing liquid P therethrough. The processing liquid P is supplied from the reservoir unit 32 to the supply tank 37 via the guide line L2 whose flow path is opened by the guide opening/closing valve 33.
The method of feeding the treatment liquid P from the reservoir unit 32 to the supply tank 37 is not limited. For example, the processing liquid P may be sent from the reservoir unit 32 to the introduction line L2 by blowing a pressurizing gas (for example, an inert gas such as nitrogen) into the reservoir tank of the reservoir unit 32 (see fig. 7 described later). Further, by providing the reservoir unit 32 and the guide line L2 above the supply tank 37, the processing liquid P can be conveyed from the reservoir unit 32 to the supply tank 37 by gravity. When a delivery device such as a pump (not shown) for directly delivering the treatment liquid P in the guide line L2 is used, such a delivery device is preferably provided upstream of the guide filter 34. In this case, even if particles are released into the processing liquid P from the delivery device, for example, such particles can be removed from the processing liquid P by the guide filter 34.
At least one of the introduction line L2 and the supply tank 37 is provided with a heating zone in which the processing liquid is heated by the heating unit. In the example shown in fig. 3, the heating zones are set to both the guide line L2 and the supply tank 37. That is, the first heating unit 35 is provided in the vicinity of the first heating zone Z1 of the introduction line L2, and the processing liquid P in the first heating zone Z1 is heated by the first heating unit 35. Further, a second heating unit 36 is provided in the vicinity of the second heating zone Z2 of the supply tank 37, and the processing liquid P in the second heating zone Z2 is heated by the second heating unit 36.
The heating zones Z1, Z2 are set downstream of the guide filter 34. The guide filter 34 removes foreign matter from the processing liquid P flowing through the upstream side of the heating zones Z1 and Z2 in the flow path of the processing liquid P. There is a tendency that: the higher the temperature of the treatment liquid P passing through the guide filter 34, the more easily foreign substances are released from the guide filter 34 to the treatment liquid P. In the liquid supply circuit 30 shown in fig. 3, the processing liquid P before heating passes through the guide filter 34, and therefore, the foreign matter can be prevented from being released from the guide filter 34 to the processing liquid P. In the liquid supply circuit 30 shown in fig. 3, no filter for removing foreign matter from the treatment liquid P is provided in the heating zones Z1 and Z2 and the flow path on the downstream side of the heating zones Z1 and Z2, among the flow paths of the treatment liquid P from the introduction line L2 to the discharge nozzle 19. By not passing the high-temperature treatment liquid P heated by the heating zones Z1 and Z2 through the filter in this manner, contamination of the treatment liquid P can be prevented.
The processing liquid P is supplied to the inside of the supply tank 37 via the guide line L2. A pressurizing device 38 is attached to the supply tank 37. The pressurizing device 38 pressurizes the inside of the supply tank 37, and sends the processing liquid P from the supply tank 37 to the supply line L4. The illustrated pressurizing device 38 is connected to the supply tank 37 via a gas line L3, and can supply a pressurizing gas (e.g., an inert gas such as nitrogen) into the supply tank 37 via the gas line L3 to increase the pressure in the supply tank 37. A pressurizing filter 39 is provided in a portion of the gas line L3 downstream of the pressurizing device 38. The pressurizing filter 39 removes foreign matters from the pressurizing gas from the pressurizing device 38 while passing the pressurizing gas therethrough. Then, the pressurizing gas sent out from the pressurizing device 38 to the gas line L3 flows into the supply container 37 in a clean state after foreign matter is removed by the pressurizing filter 39.
The supply line L4 is connected to the supply tank 37 and the ejection nozzle 19. The supply line L4 is not provided with an adjustment mechanism for variably restricting (variably restricting) the flow path connecting the supply tank 37 and the discharge nozzle 19. The "adjustment mechanism for variably restricting the flow path" referred to herein may be constituted by any adjustment mechanism. Typically, an adjustment mechanism such as a valve or a pump capable of changing the cross-sectional area of the processing liquid flow path may correspond to "an adjustment mechanism that variably restricts the flow path". Examples of the valve that can be used as the "adjustment mechanism for variably restricting the flow path" include a distribution valve that operates as an on-off valve for opening and closing the flow path, and a suck-back valve for retracting the liquid surface at the tip of the nozzle to the upstream side. The "adjustment mechanism that variably restricts the flow path" may mix particles such as dust into the liquid in the flow path. In the liquid supply circuit 30 shown in fig. 3, since the "adjustment mechanism for variably restricting the flow path" is not provided at a position downstream of the guide filter 34, it is possible to prevent particles from being mixed into the processing liquid P in the flow path between the guide filter 34 and the discharge nozzle 19.
A first drain line L5 is connected to the first branch portion b1 between the supply tank 37 and the ejection nozzle 19 in the supply line L4. A liquid flow adjusting mechanism 40 is provided on the first drain line L5. The liquid flow adjusting mechanism 40 can adjust the flow of the treatment liquid P in the supply line L4 and the first drain line L5, and control the discharge of the treatment liquid P from the discharge nozzle 19. The liquid flow adjusting mechanism 40 can be realized by various configurations, and a specific example of the liquid flow adjusting mechanism 40 will be described later (see fig. 8 to 13). The processing liquid P having passed through the liquid flow adjusting mechanism 40 is sent downstream through the first drain line L5, and is returned to the storage unit 32 or discharged to the drain container 41.
In the liquid supply circuit 30 (substrate liquid processing apparatus) having the above-described configuration, the processing liquid P is supplied from the supply tank 37 to the discharge nozzle 19 through the supply line L4 by pressurizing the inside of the supply tank 37 by the pressurizing device 38. The treatment liquid P thus supplied to the discharge nozzle 19 is discharged from the discharge nozzle 19 toward the substrate W, whereby the treatment liquid P is supplied to the substrate W to perform liquid treatment of the substrate W.
Next, a specific example of the components of the liquid supply circuit 30 will be described.
[ storage Unit ]
Fig. 4 to 7 are diagrams for explaining an example of the storage unit 32.
The storage unit 32 shown in fig. 4 to 7 has a plurality of storage containers (i.e., a first storage container 47a and a second storage container 47 b). The first storage vessel 47a and the second storage vessel 47b are connected to each other via a plurality of circulation lines (i.e., a first circulation line L7a and a second circulation line L7 b).
The first circulation line L7a is a line for guiding the treatment liquid P from the first reservoir 47a to the second reservoir 47 b. A first circulation opening/closing valve 49a and a first circulation filter 50a are provided in the first circulation line L7 a. The first circulation on-off valve 49a is provided upstream of the first circulation filter 50a (i.e., on the first storage container 47a side), and opens and closes the first circulation line L7a under the control of the controller 93. The first circulation filter 50a is provided on the downstream side of the first circulation opening/closing valve 49a (i.e., on the side of the second storage container 47 b), and removes foreign matter from the processing liquid P while allowing the processing liquid P in the first circulation line L7a to pass therethrough.
The second circulation line L7b is a line for guiding the treatment liquid P from the second reservoir 47b to the first reservoir 47a. A second circulation opening/closing valve 49b and a second circulation filter 50b are provided in the second circulation line L7 b. The second circulation on-off valve 49b is provided upstream of the second circulation filter 50b (i.e., on the side of the second storage container 47 b), and opens and closes the second circulation line L7b under the control of the controller 93. The second circulation filter 50b is provided downstream of the second circulation opening/closing valve 49b (i.e., on the first storage container 47a side), and removes foreign matter from the processing liquid P in the second circulation line L7b while allowing the processing liquid P to pass therethrough.
The first reservoir 47a is provided with a first reservoir pressurizing unit 48a, and the second reservoir 47b is provided with a second reservoir pressurizing unit 48b. Under the control of the controller 93, the first reservoir pressurizing unit 48a pressurizes the inside of the first reservoir 47a, and the second reservoir pressurizing unit 48b pressurizes the inside of the second reservoir 47 b. The specific structure of the first and second storage pressurizing units 48a and 48b is not limited. For example, the first reservoir pressurizing unit 48a and the second reservoir pressurizing unit 48b may have compressors that send pressurizing gas to the inside of the first reservoir tank 47a and the second reservoir tank 47b, respectively.
The storage line L1 is connected to the first storage tank 47a. The storage line L1 is provided with a storage on-off valve 45 and a storage filter 46. The storage on-off valve 45 is provided upstream of the storage filter 46 (i.e., on the side of the processing liquid supply source 31), and opens and closes the storage line L1 under the control of the controller 93. The storage filter 46 is provided on the downstream side of the storage opening/closing valve 45 (i.e., on the first storage container 47a side), and removes foreign substances from the processing liquid P while allowing the processing liquid P in the storage line L1 to pass therethrough.
The guide line L2 is connected to the first reservoir tank 47a, and the first reservoir tank 47a is connected to the supply tank 37 via the guide line L2.
The storage unit 32 is provided with other mechanisms not shown as necessary. For example, each of the first reservoir tank 47a and the second reservoir tank 47b is provided with a liquid amount measuring device (not shown) such as a level sensor (not shown) for measuring the height and/or amount of the processing liquid P stored inside. For example, the heights of the processing liquids P in the storage containers 47a and 47b can be measured by providing a plurality of sensors for detecting the presence or absence of the processing liquids P at different heights in the storage containers 47a and 47 b. The measurement result of the liquid amount measuring means is sent to the control unit 93.
The first drain line L5 (see fig. 3) may be connected to at least one of the plurality of storage containers 47a and 47 b. In this case, the processing liquid having passed through the liquid flow adjusting mechanism 40 flows into at least one of the plurality of storage tanks 47a and 47b through the first drain line L5. The first drain line L5 may be directly connected to at least one of the plurality of storage containers 47a and 47b, or may be connected to them via the storage line L1. By connecting the first drain line L5 to the portion of the storage line L1 upstream of the storage filter 46, the processing liquid P flowing from the first drain line L5 into the storage line L1 flows into the first storage tank 47a after foreign matters are removed by the storage filter 46.
When the processing liquid P is supplied to the reservoir unit 32 having the above-described configuration, the reservoir unit 32 is placed in the state shown in fig. 4. That is, under the control of the controller 93, the reservoir line L1 is opened by the reservoir on-off valve 45, and the first circulation line L7a, the second circulation line L7b, and the pilot line L2 are closed by the first circulation on-off valve 49a, the second circulation on-off valve 49b, and the pilot on-off valve 33. Thereby, the processing liquid P is supplied from the processing liquid supply source 31 to the first reservoir tank 47a via the reservoir line L1, and the processing liquid P is stored in the first reservoir tank 47a.
The controller 93 monitors the height and/or the amount of the processing liquid P in the first reservoir 47a based on the measurement result of the liquid amount measuring means. When the processing liquid P in the first reservoir 47a reaches a predetermined height and/or amount (for example, about 300cc to 500 cc), the controller 93 controls the storage on-off valve 45 to close the storage line L1 and stops the supply of the processing liquid P to the first reservoir 47a.
Thereafter, the treatment liquid P is circulated between the plurality of reservoir tanks 47a and 47b, and foreign matters are removed by the circulation filters 50a and 50b. For example, as shown in fig. 5, under the control of the control section 93, the first circulation line L7a is opened by the first circulation on-off valve 49a, and the second circulation line L7b and the pilot line L2 are closed by the second circulation on-off valve 49b and the pilot on-off valve 33. In this state, the first reservoir pressurizing unit 48a pressurizes the inside of the first reservoir 47a, and thereby the processing liquid P can be transferred from the first reservoir 47a to the second reservoir 47b via the first circulation line L7 a. Further, as shown in fig. 6, under the control of the control section 93, the second circulation line L7b is opened by the second circulation on-off valve 49b, and the first circulation line L7a and the pilot line L2 are closed by the first circulation on-off valve 49a and the pilot on-off valve 33. In this state, the second reservoir pressurizing unit 48b pressurizes the inside of the second reservoir 47b, thereby enabling the treatment liquid P to be transferred from the second reservoir 47b to the first reservoir 47a.
After the foreign matter is removed from the treatment liquid P by the circulation filters 50a and 50b in this manner, the treatment liquid P is transported from the storage unit 32 to the supply tank 37. Specifically, as shown in fig. 7, under the control of the control unit 93, the guide line L2 is opened by the guide opening/closing valve 33, and the first circulation line L7a and the second circulation line L7b are closed by the first circulation opening/closing valve 49a and the second circulation opening/closing valve 49 b. In this state, the inside of the first reservoir tank 47a is pressurized by the first reservoir pressurizing unit 48a, whereby the processing liquid P can be fed from the first reservoir tank 47a to the guide line L2.
In the above-described examples shown in fig. 4 to 7, the first circulation filter 50a and the second circulation filter 50b constitute "a filter that removes foreign matter from the treatment liquid flowing through at least one of the plurality of circulation lines". The combination of the first storage pressurizing unit 48a, the second storage pressurizing unit 48b, the first circulation on-off valve 49a, the second circulation on-off valve 49b, and the guide on-off valve 33 constitutes "a circulation adjusting mechanism that circulates the processing liquid between the plurality of storage containers through the plurality of circulation lines".
In a conventional substrate liquid processing apparatus, foreign substances are removed from a processing liquid by filtering the processing liquid while circulating the processing liquid by, for example, a bellows pump (bellows pump). In contrast, according to the storage unit 32 shown in fig. 4 to 7, foreign substances can be removed from the treatment liquid P by circulating the treatment liquid P between the plurality of storage containers 47a and 47b using a pressurizing gas, for example. Therefore, foreign matter can be appropriately removed from the treatment liquid P by the reservoir unit 32 having a simple structure without using a mechanism having a complicated structure such as a bellows pump.
Next, a specific example of a supply system for supplying the processing liquid P from the supply tank 37 to the discharge nozzle 19 will be described. Hereinafter, 2 configuration examples of such a treatment liquid supply system (i.e., "first embodiment of treatment liquid supply system" and "second embodiment of treatment liquid supply system") will be described.
[ first embodiment of treatment liquid supply System ]
Fig. 8 to 11 are schematic views showing a first embodiment of the treatment liquid supply system. In fig. 8 to 11, some components are not shown. For example, although the present embodiment is provided with heating units (i.e., the first heating unit 35 and the second heating unit 36 in fig. 3) for heating the processing liquid P, the heating units are not shown in fig. 8 to 11. The configuration and operation of each element that have been described above will not be described in detail.
In the supply container 37 of this embodiment, an atmosphere open line L9 is connected in addition to the above-described guide line L2, gas line L3, and supply line L4. The atmosphere opening line L9 is provided to connect the inside of the supply container 37 to the ambient environment (for example, the atmosphere) of the supply container 37, and to make the pressure inside the supply container 37 equal to the ambient pressure (for example, the atmospheric pressure). The atmosphere opening line L9 is provided with an atmosphere opening valve 63. The atmosphere opening valve 63 opens and closes the flow path of the atmosphere opening line L9 under the control of the control unit 93. By opening the atmosphere opening line L9 with the atmosphere opening valve 63, the inside of the supply tank 37 is opened to the surroundings, and gas can freely move between the inside of the supply tank 37 and the surroundings through the atmosphere opening line L9. On the other hand, when the atmosphere opening line L9 is closed by the atmosphere opening valve 63, the inside of the supply tank 37 is blocked from the surroundings, and no gas flows between the inside of the supply tank 37 and the surroundings. For example, when the processing liquid P is supplied to the discharge nozzle 19 (see fig. 9 described later), the controller 93 controls the atmosphere opening valve 63 to close the atmosphere opening line L9, thereby placing the inside of the supply container 37 in a state in which the pressure can be efficiently raised. When the processing liquid P is not supplied to the discharge nozzle 19 (see fig. 10 and 11 described later), the controller 93 controls the atmosphere opening valve 63 to open L9.
The pressurizing device 38 includes a gas supply unit 65, a gas pressure regulator 66, and a gas on-off valve 67, wherein the gas supply unit 65 causes a pressurizing gas to flow in a gas line L3 connected to the inside of the supply container 37, the gas pressure regulator 66 regulates the pressure of the pressurizing gas flowing in the gas line L3, and the gas on-off valve 67 opens and closes the flow path of the gas line L3. The gas supply unit 65 may be driven by the control of the control unit 93, and may include a compressor, for example. The air pressure adjusting portion 66 may be driven by the control of the control portion 93, and may have an electro-pneumatic regulator, for example. The gas supply unit 65 and the gas pressure adjustment unit 66 may be stopped from being driven under the control of the control unit 93, for example, when the liquid supply circuit 30 is placed in a standby state. The gas opening/closing valve 67 can be driven by the control of the control unit 93, and is, for example, an electromagnetic valve.
The supply tank 37 is provided with a liquid amount measuring mechanism (not shown) such as a liquid level sensor for measuring the height and/or amount of the processing liquid P stored inside. The measurement result of the liquid amount measuring means is sent to the control unit 93.
The discharge nozzle 19 is located above the supply tank 37 and the liquid flow adjustment mechanism 40 (specifically, the back pressure valve 42). The supply tank 37 and the liquid flow adjustment mechanism 40 (back pressure valve 42) are provided at a position lower than the highest portion in the supply line L4.
A liquid detection sensor 61 is provided in the vicinity of the supply line L4. The liquid detection sensor 61 detects the presence or absence of the processing liquid P at the first measurement site M1 located on the downstream side (i.e., the side of the discharge nozzle 19) of the first branch portion b1 in the supply line L4. The detection method of the liquid detection sensor 61 is not limited. For example, in the case where the supply line L4 is formed of a light-permeable member, an optical sensor may be used as the liquid detection sensor 61. In addition, the liquid detection sensor 61 may be a sensor that measures the capacitance or the magnetic field at the first measurement site M1. The liquid detection sensor 61 sends the detection result to the control unit 93.
The first branch portion b1 is located between the highest portion in the supply line L4 from the supply container 37 to the ejection nozzle 19 and the supply container 37. The first measurement location M1 is located between the highest portion of the supply line L4 from the supply container 37 to the discharge nozzle 19 and the first branch portion b1, and is set at a position lower than the highest portion of the supply line L4.
A flow meter 62 is provided in the supply line L4. The flow meter 62 measures the flow rate of the processing liquid P at a second measurement location M2 on the downstream side (i.e., on the side of the ejection nozzle 19) of the first branch portion b1 in the supply line L4. The flow meter 62 transmits the measurement result to the control unit 93. The controller 93 adjusts the set pressure of the back pressure valve 42, which will be described later, based on the measurement result of the flow meter 62.
The first drain line L5 is provided with a back pressure valve 42 and a drain on-off valve 43 located downstream of the back pressure valve 42. The drain opening/closing valve 43 opens and closes the flow path of the first drain line L5 under the control of the control unit 93. The back pressure valve 42 functions as the flow regulating mechanism 40 and restricts the passage of the treatment liquid P lower than the set pressure. The back pressure valve 42 in this example allows the treatment liquid P at a pressure equal to or higher than a set pressure to pass therethrough, and prevents the treatment liquid P from passing therethrough at a pressure lower than the set pressure. Thus, the back pressure valve 42 adjusts the pressure of the treatment liquid P in the first drain line L5 (in particular, the flow path upstream of the back pressure valve 42) and the supply line L4 to a pressure lower than the set pressure.
The set pressure of the back pressure valve 42 is adjusted by the control unit 93, and the flow state of the processing liquid P can be changed by changing the set pressure. For example, when the treatment liquid P is supplied to the discharge nozzle 19, the control unit 93 adjusts the set pressure of the back pressure valve 42 so as to be equal to or higher than the peak head pressure, which is the pressure head at the highest position in the supply line L4 from the supply tank 37 to the discharge nozzle 19. On the other hand, when the processing liquid P is not supplied to the discharge nozzle 19, the control unit 93 adjusts the set pressure of the back pressure valve 42 so as to be lower than the peak head pressure.
A second drain line L6 is connected to the second branch portion b2 of the supply line L4 between the supply tank 37 and the discharge nozzle 19. In the examples shown in fig. 8 to 11, the second branch portion b2 is set at the same position as the first branch portion b1, but the second branch portion b2 may be provided upstream or downstream of the first branch portion b 1. The second drain line L6 may be connected to the supply line L4 via the first drain line L5.
A suction mechanism 53 is provided in the second drain line L6. The driving mode of the suction mechanism 53 can be switched between a suction mode in which the flow path of the supply line L4 is sucked through the second drain line L6, and a non-suction mode in which the flow path of the supply line L4 is not sucked through the second drain line L6. For example, when the processing liquid P is not supplied to the discharge nozzle 19, the controller 93 at least temporarily adjusts the suction mechanism 53 to the suction mode. This makes it possible to quickly separate the treatment liquid P in the supply line L4 from the discharge nozzle 19, and prevent unexpected problems such as the treatment liquid P dropping from the discharge nozzle 19.
The suction mechanism 53 of this example has a mode switching valve 54, a negative pressure container 55, and a negative pressure regulator 56. The mode switching valve 54 is provided in the second liquid discharge line L6, and opens and closes the second liquid discharge line L6 under the control of the controller 93. One end of the second drain line L6 is connected to the supply line L4 (particularly, the second branch portion b 2), and the other end of the second drain line L6 is connected to the negative pressure tank 55. The negative pressure regulator 56 regulates the negative pressure container 55 to a negative pressure state.
The illustrated negative pressure regulator 56 includes a negative pressure compressor 57, a negative pressure on-off valve 58, and a negative pressure ejector 59. The negative pressure compressor 57 sends a gas (for example, an inert gas such as nitrogen) to the negative pressure line L8 under the control of the control unit 93. The negative pressure on-off valve 58 is provided between the negative pressure compressor 57 and the negative pressure ejector 59, and opens and closes the negative pressure line L8 under the control of the control unit 93. The negative pressure ejector 59 may be configured by an aspirator (aspirator) connecting the negative pressure tank 55 and the negative pressure line L8, and may be configured to be in a reduced pressure state inside the negative pressure tank 55 by utilizing a Venturi effect (Venturi effect) of the gas flowing through the negative pressure line L8. The aspirator typically has a T-shaped flow path composed of a combination of a horizontal flow path and a vertical flow path. The horizontal flow path is locally narrowed at a junction portion where the horizontal flow path and the vertical flow path are merged. When the fluid (in this example, the gas from the negative pressure compressor 57) is caused to flow through the horizontal flow path, the flow velocity of the fluid increases and the pressure decreases at the merging portion, and as a result, the fluid in the vertical flow path is sucked toward the horizontal flow path side.
When the suction mechanism 53 is adjusted to the non-suction mode, the control section 93 controls the mode switching valve 54 to close the flow path of the second drain line L6. On the other hand, when the suction mechanism 53 is adjusted to the suction mode, the control section 93 controls the mode switching valve 54 to open the flow path of the second drain line L6.
For example, when the temperature of the processing liquid P is adjusted, the liquid supply circuit 30 is placed in the state shown in fig. 8 under the control of the control unit 93. That is, the guide line L2 is opened by the guide opening/closing valve 33, the atmosphere open line L9 is closed by the atmosphere open valve 63, and the gas line L3 is opened by the gas opening/closing valve 67. The first drain line L5 is opened by the drain opening and closing valve 43, and the second drain line L6 is closed by the mode switching valve 54. The control unit 93 lowers the set pressure of the back pressure valve 42 below the peak head pressure.
In this state, the pressure of the pressurizing gas supplied from the gas supply unit 65 to the gas line L3 is adjusted by the gas pressure adjusting unit 66, and then the gas is supplied into the supply container 37 through the pressurizing filter 39. Thereby, the inside of the supply tank 37 is pressurized, and the processing liquid P is sent from the supply tank 37 to the supply line L4. On the other hand, the processing liquid P is supplied from the storage unit 32 (e.g., a first storage tank 47a shown in fig. 4 to 7) to the supply tank 37 via the guide line L2. The control unit 93 controls the guide on-off valve 33 to open and close the guide line L2 based on the measurement result of a liquid amount measuring mechanism (not shown) provided in the supply tank 37, and stores an appropriate amount of the processing liquid P in the supply tank 37.
A part of the processing liquid P flowing from the supply tank 37 into the supply line L4 flows into the first drain line L5 via the first branch portion b1, and reaches the back pressure valve 42. Since the set pressure of the back pressure valve 42 is adjusted to be lower than the peak head pressure, the back pressure valve 42 adjusts the processing liquid P in the supply line L4 to a pressure lower than the peak head pressure while passing the processing liquid P therethrough. Accordingly, the processing liquid P in the supply line L4 can reach only a height position lower than the highest portion in the supply line L4, and the processing liquid P is not supplied to the discharge nozzle 19.
The processing liquid P having passed through the back pressure valve 42 is sent to the reservoir unit 32 (for example, a first reservoir 47a shown in fig. 4 to 7) through a first drain line L5. The treatment liquid P may be directly supplied from the first drain line L5 to the storage unit 32, or may be supplied from the first drain line L5 to the storage unit 32 via a container and a line, not shown. The processing liquid P sent from the first drain line L5 to the reservoir unit 32 is returned to the supply tank 37 via the guide line L2.
In this way, when the liquid supply circuit 30 is in the state shown in fig. 8, the processing liquid P sent from the supply tank 37 to the supply line L4 is not discharged from the discharge nozzle 19, but is returned to the supply tank 37 via the first drain line L5, the reservoir unit 32, and the guide line L2. The processing liquid P is heated in the heating zone (not shown in fig. 8, see the first heating zone Z1 and the second heating zone Z2 in fig. 3) while circulating in the liquid supply circuit 30 in this manner, and is gradually heated as a whole to be adjusted to a desired temperature.
After the processing liquid P is adjusted to a desired temperature, when the processing liquid P is supplied to the discharge nozzle 19 and discharged from the discharge nozzle 19, the liquid supply circuit 30 is put into the state shown in fig. 9 under the control of the control unit 93.
That is, the control unit 93 sets the set pressure of the back pressure valve 42 to the peak head pressure or higher (preferably higher than the peak head pressure). The guide line L2 is closed by the guide opening and closing valve 33, but the open and closed states of the atmosphere open line L9, the gas line L3, the first drain line L5, and the second drain line L6 are set to the same state as that shown in fig. 8. The pressurizing device 38 (particularly, the air pressure adjusting unit 66) pressurizes the inside of the supply tank 37 so that the processing liquid P sent from the supply tank 37 to the supply line L4 has a pressure equal to or higher than the peak head pressure (preferably, a pressure higher than the peak head pressure).
Thereby, the back pressure valve 42 adjusts the processing liquid P in the supply line L4 to the same pressure as the "set pressure equal to or higher than the peak head pressure". As a result, the processing liquid P reaches the highest portion of the supply line L4, and is then supplied to the discharge nozzle 19.
The controller 93 may adjust the set pressure of the back pressure valve 42 based on the measurement result of the flow meter 62. For example, when it is determined from the measurement result of the flow meter 62 that the amount of the treatment liquid P supplied to the discharge nozzle 19 is insufficient, the control unit 93 may increase the set pressure of the back pressure valve 42 to supply a larger amount of the treatment liquid P to the discharge nozzle 19. Further, the controller 93 may decrease the amount of the treatment liquid P supplied to the discharge nozzle 19 by decreasing the set pressure of the back pressure valve 42 when it is determined from the measurement result of the flow meter 62 that the amount of the treatment liquid P supplied to the discharge nozzle 19 is excessive.
In the example shown in fig. 9, while the processing liquid P is supplied to the discharge nozzle 19, the negative pressure line L8 is opened by the negative pressure on-off valve 58 under the control of the controller 93, and the negative pressure container 55 is adjusted to a negative pressure state.
Next, when the supply of the treatment liquid P to the discharge nozzle 19 is stopped and the discharge of the treatment liquid P from the discharge nozzle 19 is stopped from the state in which the treatment liquid P is being supplied to the discharge nozzle 19, the liquid supply circuit 30 is put into the state shown in fig. 10 under the control of the control unit 93.
That is, the control unit 93 lowers the set pressure of the back pressure valve 42 below the peak head pressure. Thereby, the back pressure valve 42 adjusts the treatment liquid P in the supply line L4 to a pressure lower than the peak head pressure. As a result, the processing liquid P cannot reach the highest portion of the supply line L4, and the processing liquid P is no longer supplied to the discharge nozzle 19.
The second drain line L6 is opened by the mode switching valve 54 under the control of the control unit 93, and the suction mechanism 53 is adjusted to the suction mode. Thereby, the negative pressure container 55 is connected to the supply line L4 via the second drain line L6, and the processing liquid P in the supply line L4 is sucked into the negative pressure container 55 via the second drain line L6. As a result, the water head position of the treatment liquid P in the supply line L4 can be quickly separated from the discharge nozzle 19, and the discharge of the treatment liquid P from the discharge nozzle 19 can be instantaneously stopped. The processing liquid P flowing into the negative pressure container 55 is sent to the reservoir unit 32 via the negative pressure ejector 59 and the negative pressure line L8.
The control unit 93 switches the suction mechanism 53, which will be described later, from the suction mode to the non-suction mode based on the detection result of the liquid detection sensor 61. While the detection result of the liquid detection sensor 61 indicates the presence of the processing liquid P at the first measurement site M1, the control section 93 controls the suction mechanism 53 (particularly, the mode switching valve 54) to maintain the suction mode. On the other hand, in the case where the detection result of the liquid detection sensor 61 indicates that the processing liquid P is not present at the first measurement site M1, the control section 93 controls the suction mechanism 53 (particularly, the mode switching valve 54) to switch from the suction mode to the non-suction mode. This can reliably separate the head position of the processing liquid P in the supply line L4 from the discharge nozzle 19.
The atmosphere opening line L9 is opened by the atmosphere opening valve 63, and the gas line L3 is closed by the gas opening/closing valve 67. Thereby, the pressure inside the supply tank 37 is adjusted to be equal to the pressure around the supply tank 37, and the pressure of the processing liquid P flowing from the supply tank 37 to the supply line L4 can be reduced.
In addition, the open and closed states of the guide line L2 and the first drain line L5 are set to the same state as the state shown in fig. 9.
Next, when the liquid supply circuit 30 is placed in the standby state, the liquid supply circuit 30 is placed in the state shown in fig. 11 under the control of the control unit 93.
That is, the control unit 93 lowers the set pressure of the back pressure valve 42 below the peak head pressure. The first drain line L5 is closed by the drain on/off valve 43, the atmosphere open line L9 is opened by the atmosphere open valve 63, and the gas line L3 is closed by the gas on/off valve 67. The second drain line L6 is closed by the mode switching valve 54, and the negative pressure line L8 is closed by the negative pressure on-off valve 58.
Thus, the processing liquid P in the supply tank 37 and the supply line L4 is not supplied to the discharge nozzle 19 and is not circulated. The inside of the supply tank 37 is not pressurized, and the processing liquid P in the supply line L4 is not discharged through the first drain line L5 and the second drain line L6. Therefore, the liquid level of the processing liquid P in the supply line L4 is the same as the liquid level of the processing liquid P in the supply tank 37.
On the other hand, the guide line L2 is opened by the guide opening/closing valve 33, and the processing liquid P is supplied from the reservoir unit 32 to the supply tank 37 via the guide line L2. The control unit 93 monitors the amount of the processing liquid P stored in the supply tank 37 based on the measurement result of a liquid amount measuring mechanism (not shown) provided in the supply tank 37. Then, when the processing liquid P in the supply tank 37 reaches an appropriate amount, the control unit 93 closes the guide line L2 by the guide opening/closing valve 33 to stop the supply of the processing liquid P to the supply tank 37.
In a conventional substrate liquid processing apparatus, pressure is applied to the processing liquid even in the vicinity of the discharge nozzle, and whether or not the processing liquid is discharged from the discharge nozzle is switched by opening and closing an on-off valve provided in the supply line. On the other hand, according to the liquid supply circuit 30 shown in fig. 8 to 11, whether or not the processing liquid P is discharged from the discharge nozzle 19 can be switched by changing the set pressure of the back pressure valve 42. Therefore, according to the liquid supply circuit 30 of the present embodiment, it is not necessary to provide a device for applying pressure to the processing liquid P near the discharge nozzle 19, and it is not necessary to provide an on-off valve in the supply line L4.
In addition, in the conventional substrate liquid processing apparatus, the flow rate of the processing liquid in the supply line may be adjusted by a constant pressure valve provided in the supply line to control the supply amount of the processing liquid to the discharge nozzle. On the other hand, according to the liquid supply circuit 30 shown in fig. 8 to 11, the supply amount of the processing liquid P to the discharge nozzle 19 can be changed by using the pressurizing gas sent from the pressurizing device 38 to the supply container 37. Therefore, according to the liquid supply circuit 30 of the present embodiment, it is not necessary to provide a constant pressure valve in the supply line L4.
[ second mode of the treatment liquid supply System ]
Fig. 12 and 13 are schematic diagrams showing a second embodiment of the treatment liquid supply system. In fig. 12 and 13, some components are not illustrated. For example, although the present embodiment is provided with heating units (i.e., the first heating unit 35 and the second heating unit 36 in fig. 3) for heating the processing liquid P, illustration thereof is omitted in fig. 12 and 13. Further, the configuration and operation of each element already described are not described in detail.
The liquid supply circuit 30 of the present embodiment also includes a supply container 37, a pressurizing device 38, a discharge nozzle 19, and a supply line L4, which are similar to the liquid supply circuit 30 of the first embodiment. That is, the processing liquid P is supplied to the inside of the supply tank 37 through the guide line L2, the pressurizing device 38 pressurizes the inside of the supply tank 37, and the discharge nozzle 19 discharges the supplied processing liquid P. The supply line L4 is connected to the supply tank 37 and the ejection nozzle 19, and is not provided with an adjustment mechanism that variably restricts (variably restricts) the flow path connecting the supply tank 37 and the ejection nozzle 19.
The liquid supply circuit 30 of the present embodiment further includes a supply injector 69. The supply injector 69 functions as a liquid flow switching mechanism provided in the first branch portion b1, and switches whether or not to flow the processing liquid P in the supply line L4 in a portion connecting the first branch portion b1 and the discharge nozzle 19, in accordance with the flow of the processing liquid P in the first drain line L5. Specifically, the supply ejector 69 may be configured as an aspirator that connects the discharge nozzle 19, the supply line L4, and the first liquid discharge line L5. The supply injector 69 can be brought into a reduced pressure state at the discharge nozzle 19 by utilizing the venturi effect of the processing liquid P flowing from the supply line L4 to the first drain line L5.
The first exhaust line L5 connected to the first branch portion b1 is connected to the supply line L4 in the supply injector 69. The first drain line L5 is branched into a first branch drain line L5a provided with a back pressure valve 42 and a second branch drain line L5b provided with a drain on-off valve 43. The first branch drain line L5a and the second branch drain line L5b are connected to a storage unit 32 (for example, a first storage container 47a shown in fig. 4 to 7).
The highest portion of the first drain line L5 is provided at the same height position as the highest portion of the supply line L4, or at a position lower than the highest portion of the supply line L4. In particular, the first branch drain line L5a and the second branch drain line L5b are provided at a position lower than the highest portion of the supply line L4.
The back pressure valve 42 restricts passage of the processing liquid P lower than the set pressure, and does not allow passage of the processing liquid P lower than the set pressure while allowing passage of the processing liquid P higher than or equal to the set pressure. The discharge opening/closing valve 43 opens and closes the second branch discharge line L5b under the control of the control unit 93.
The back pressure valve 42 and the drain on/off valve 43 function as a liquid flow adjusting mechanism 40 for adjusting the flow of the treatment liquid P in the first drain line L5 under the control of the control unit 93. For example, when the second branch drain line L5b is opened by the drain opening/closing valve 43 (see fig. 12), the processing liquid P in the first drain line L5 is sent to the reservoir unit 32 through the second branch drain line L5b. Therefore, the treatment liquid P in the first drain line L5 can be smoothly fed downstream substantially without pressure adjustment. On the other hand, when the second branch drain line L5b is closed by the drain opening/closing valve 43 (see fig. 13), the back pressure valve 42 blocks the flow of the treatment liquid P in the first drain line L5 to adjust the pressure of the treatment liquid P in the first drain line L5 to a pressure lower than the set pressure.
The other structure is the same as that of the liquid supply circuit 30 of the first embodiment (see fig. 8 to 11). For example, the discharge nozzle 19 is located above the supply tank 37 and the liquid flow adjustment mechanism 40 (specifically, the back pressure valve 42 and the drain on/off valve 43).
For example, when the temperature of the processing liquid P is adjusted, the liquid supply circuit 30 is set to the state shown in fig. 12 under the control of the control unit 93. That is, the guide line L2 is opened by the guide opening/closing valve 33, the atmosphere open line L9 is closed by the atmosphere open valve 63, the gas line L3 is opened by the gas opening/closing valve 67, and the second branch drain line L5b is opened by the drain opening/closing valve 43.
In this state, the pressure of the pressurizing gas supplied from the gas supply unit 65 to the gas line L3 is adjusted by the gas pressure adjusting unit 66, and then the gas is supplied into the supply container 37 through the pressurizing filter 39. Thereby, the inside of the supply tank 37 is pressurized, and the processing liquid P is sent from the supply tank 37 to the supply line L4. At this time, the pressurizing device 38 (particularly, the air pressure adjusting portion 66) pressurizes the inside of the supply tank 37 so that the processing liquid P sent from the supply tank 37 to the supply line L4 has a pressure higher than the peak head pressure.
On the other hand, the processing liquid P is supplied from the storage unit 32 (for example, the first storage tank 47a shown in fig. 4 to 7) to the supply tank 37 via the guide line L2. The control unit 93 controls the guide on-off valve 33 to open and close the guide line L2 based on the measurement result of a liquid amount measuring mechanism (not shown) provided in the supply tank 37, so that an appropriate amount of the processing liquid P is stored in the supply tank 37.
The processing liquid P flowing from the supply tank 37 into the supply line L4 flows into the first branch portion b1 into the first drain line L5, and is transported to the storage unit 32 via the second branch drain line L5b. That is, the processing liquid P in the supply line L4 flows into the first drain line L5 after the flow velocity thereof is increased by the supply injector 69. On the other hand, the portion between the first branch portion b1 and the ejection nozzle 19 in the supply line L4 is depressurized. As a result, substantially all of the treatment liquid P in the supply line L4 flows into the first drain line L5 and is not supplied to the discharge nozzle 19. Specifically, the gas around the discharge nozzle 19 flows into the supply line L4 through the discharge nozzle 19, and a gas flow from the discharge nozzle 19 to the first branch portion b1 is generated.
The processing liquid P sent from the second branch drain line L5b to the reservoir unit 32 is returned to the supply tank 37 via the guide line L2. In this way, when the liquid supply circuit 30 is in the state shown in fig. 12, the processing liquid P sent from the supply tank 37 to the supply line L4 is not discharged from the discharge nozzle 19, but is returned to the supply tank 37 via the first drain line L5, the reservoir unit 32, and the guide line L2. The processing liquid P is heated in the heating zone (not shown in fig. 12, see the first heating zone Z1 and the second heating zone Z2 in fig. 3) while circulating in the liquid supply circuit 30 in this manner, and is gradually heated as a whole to be adjusted to a desired temperature.
After the processing liquid P is adjusted to a desired temperature, when the processing liquid P is supplied to the discharge nozzle 19 to discharge the processing liquid P from the discharge nozzle 19, the liquid supply circuit 30 is placed in a state shown in fig. 13 under the control of the control section 93.
That is, the second branch drain line L5b is closed by the drain opening/closing valve 43, and the pilot line L2 is closed by the pilot opening/closing valve 33. The open-close states of the atmosphere opening line L9 and the gas line L3 are set to the same states as those shown in fig. 12. Then, the pressurizing device 38 (particularly, the air pressure adjusting portion 66) pressurizes the inside of the supply tank 37 so that the processing liquid P sent from the supply tank 37 to the supply line L4 has a pressure higher than the peak head pressure.
Thus, the flow of the processing liquid P in the supply line L4 is blocked by the back pressure valve 42, and is adjusted to the same pressure as the "set pressure equal to or higher than the peak head pressure" by the back pressure valve 42. As a result, the processing liquid P also flows into a portion between the first branch portion b1 and the discharge nozzle 19 in the supply line L4 in the supply injector 69, and is supplied to the discharge nozzle 19.
The processing liquid P flowing into the first drain line L5 and passing through the back pressure valve 42 is sent to the reservoir unit 32 through the first branch drain line L5 a.
When the supply of the processing liquid P to the discharge nozzle 19 is stopped and the discharge of the processing liquid P from the discharge nozzle 19 is stopped, the gas line L3 is closed by the gas opening/closing valve 67, and the atmosphere opening line L9 is opened by the atmosphere opening valve 63. As a result, the processing liquid P in the supply line L4 is adjusted to a pressure lower than the peak head pressure, and as a result, the processing liquid P cannot reach the highest portion in the supply line L4, and the processing liquid P is no longer supplied to the discharge nozzle 19.
When the liquid supply circuit 30 is placed in the standby state, the gas line L3 is closed by the gas on-off valve 67, the atmosphere open line L9 is opened by the atmosphere open valve 63, and the guide line L2 is opened by the guide on-off valve 33. Thus, the processing liquid P in the supply tank 37 and the supply line L4 is neither supplied to the discharge nozzle 19 nor circulated, but the processing liquid P is supplied from the reservoir unit 32 to the supply tank 37 via the guide line L2. The control unit 93 monitors the amount of the processing liquid P stored in the supply tank 37 based on the measurement result of a liquid amount measuring mechanism (not shown) provided in the supply tank 37. Then, when the processing liquid P in the supply tank 37 reaches an appropriate amount, the control unit 93 closes the guide line L2 by the guide opening/closing valve 33 to stop the supply of the processing liquid P to the supply tank 37.
[ heating zone and heating section ]
Next, a specific manner of heating the treatment liquid P in the heating zone (particularly, the first heating zone Z1) will be exemplified.
Fig. 14 to 17 are partial sectional views for explaining examples of heating methods in the first heating zone Z1 of the guide line L2. The first heating section 35 can heat the processing liquid P in the first heating zone Z1 by the temperature adjusting liquid Q having a higher temperature than the processing liquid P in the first heating zone Z1.
If the guide pipe 71 constituting the guide line L2 is made of a material (e.g., PFA (polytetrafluoroethylene)) that can transmit the temperature adjusting liquid Q used in the first heating unit 35, there is a risk that the temperature adjusting liquid Q is mixed into the treatment liquid P in the guide line L2. To avoid this concern, for example, as shown in fig. 14, a liquid having the same composition as the processing liquid P flowing in the introduction line L2 may be used as the temperature-adjusting liquid Q in the first heating part 35. In this case, even if the temperature adjusting liquid Q penetrates the guide pipe 71 and enters the guide line L2, the composition of the processing liquid P flowing through the guide line L2 does not change, and the processing liquid P having an appropriate composition can be supplied to the discharge nozzle 19.
As shown in fig. 15, even in the case where the guide pipe 71 is made of a material (for example, metal) that does not allow the temperature-adjusting liquid Q to permeate therethrough (preferably, does not allow both the processing liquid P and the temperature-adjusting liquid Q to permeate therethrough), the processing liquid P having an appropriate composition can be supplied to the discharge nozzle 19.
As shown in fig. 16, the guide pipe 71 constituting the guide line L2 may include an inner pipe 71a and an outer cover 71b provided outside the inner pipe 71 a. In this case, at least one of the inner tube 71a and the outer cover 71b is preferably made of a material that does not allow the treatment liquid P to permeate therethrough. At least one of the inner tube 71a and the outer cover 71b is preferably made of a material that does not allow the temperature-adjusting liquid Q to permeate therethrough. For example, when the inner tube 71a is made of a material that allows the temperature-adjusting liquid Q to permeate therethrough, the outer cover 71b is preferably made of a material that does not allow the temperature-adjusting liquid Q to permeate therethrough (preferably, does not allow both the processing liquid P and the temperature-adjusting liquid Q to permeate therethrough).
As shown in fig. 17, the temperature adjusting liquid Q is used as the temperature adjusting liquid Q having a higher density than the processing liquid P, so that the temperature adjusting liquid Q can be prevented from permeating the guide pipe 71.
Fig. 18 to 20 are schematic configuration diagrams for explaining an example of a heating mode in the first heating zone Z1 of the guide line L2. Fig. 18 and 19 show the temperature control container 75 in perspective view, and the guide pipe 71 located inside the temperature control container 75.
The first heating zone Z1 may include a portion having a spiral shape in the guide piping 71 constituting the guide line L2. In this case, the first heating unit 35 that heats the processing liquid P in the first heating zone Z1 can be downsized, and the processing liquid P can be efficiently heated in a limited space.
The treatment liquid P flowing in the introduction line L2 may be boiled by heating in the first heating zone Z1. When the treatment liquid P is boiled suddenly, the pressure in the guide pipe 71 constituting the guide line L2 increases rapidly, and the guide pipe 71 may be damaged.
In order to prevent the guide pipe 71 from being damaged by the bumping of the processing liquid P, the first heating unit 35 may heat the processing liquid P in the first heating zone Z1 using, for example, the high-temperature control liquid Q stored in the temperature control container 75 shown in fig. 18.
The first heating unit 35 shown in fig. 18 includes a temperature adjustment container 75, a flow path switching unit 74 connected to the temperature adjustment container 75 via an adjustment liquid supply line 76, and a gas-liquid discharge line 77 connected to the temperature adjustment container 75. The guide pipe 71 constituting the guide line L2 penetrates the temperature control vessel 75, and the first heating zone Z1 including the spiral portion of the guide pipe 71 is located inside the temperature control vessel 75. A flow path switching unit 74 is attached to a control liquid supply line 76 connected to the temperature control container 75, and the temperature control liquid supply unit 72 and the purge gas supply unit 73 are connected to the flow path switching unit 74. The flow path switching unit 74 can selectively introduce the temperature-adjusting liquid Q supplied from the temperature-adjusting liquid supply unit 72 and the purge gas (for example, an inert gas such as nitrogen) supplied from the purge gas supply unit 73 into the temperature adjustment container 75 under the control of the control unit 93. In this way, the temperature-adjusting-liquid supply unit 72 and the purge-gas supply unit 73 can be connected to the adjusting-liquid supply line 76 via the flow-path switching unit 74, respectively. The temperature control container 75 is connected to the temperature control liquid supply unit 72 via a gas-liquid discharge line 77.
For example, when the processing liquid P is heated in the first heating zone Z1, the flow path switching unit 74 sends the high-temperature adjustment liquid Q supplied from the temperature adjustment liquid supply unit 72 to the temperature adjustment container 75 through the adjustment liquid supply line 76 under the control of the control unit 93. Thereby, the portion of the processing liquid P on the guiding line L2 located inside the temperature adjustment container 75 is heated by the temperature adjustment liquid Q in the temperature adjustment container 75.
On the other hand, when the heating of the processing liquid P is stopped in the first heating zone Z1, the flow path switching unit 74 sends the purge gas supplied from the purge gas supply unit 73 to the temperature control vessel 75 through the control liquid supply line 76 under the control of the control unit 93. Thereby, the temperature-adjusting liquid Q in the temperature-adjusting container 75 is pushed out to the gas-liquid discharge line 77 by the purge gas. The temperature-adjusting liquid Q discharged from the temperature-adjusting container 75 to the gas-liquid discharge line 77 is sent to the temperature-adjusting-liquid supply portion 72 via the gas-liquid discharge line 77.
In this manner, in a state where the temperature adjustment liquid Q is stored in the temperature adjustment container 75, the flow path switching unit 74 introduces the purge gas into the temperature adjustment container 75, whereby the temperature adjustment liquid Q is quickly discharged from the temperature adjustment container 75 to the gas-liquid discharge line 77. By quickly discharging the temperature-adjusting liquid Q from the temperature-adjusting container 75 using the purge gas, the heating of the processing liquid P in the first heating zone Z1 can be quickly stopped. Thereby, bumping of the treatment liquid P in the introduction line L2 (particularly the first heating zone Z1 and the vicinity of the first heating zone Z1) can be effectively prevented.
As shown in fig. 19, a relief line L10 provided with a relief valve (relief valve) 87 may be connected to the pilot line L2. While the pressure of the treatment liquid P in the pilot line L2 is lower than the set relief pressure of the relief valve 87, the relief valve 87 closes the relief line L10. On the other hand, when the pressure of the processing liquid P in the pilot line L2 is equal to or higher than the set relief pressure of the relief valve 87, the relief line L10 is opened by the relief valve 87, and the processing liquid P flows out from the pilot line L2 to the relief line L10. Thus, even if bumping of the processing liquid P occurs in the guide line L2, the pressure in the guide line L2 can be prevented from becoming excessively high, and the guide pipe 71 can be prevented from being damaged.
In addition, the first heating unit 35 may heat the processing liquid P in the first heating zone Z1 by using an electric heater 88 shown in fig. 20 instead of the temperature adjustment liquid Q stored in the temperature adjustment container 75. In the example shown in fig. 20, an electric heater 88 is disposed so as to penetrate through a spiral portion in the guide pipe 71. The control portion 93 can switch the heating and non-heating of the processing liquid P in the first heating zone Z1 by switching ON (ON) and OFF (OFF) of the power supply to the electric heater 88. From the viewpoint of preventing the treatment liquid P from bumping, it is preferable that the electric heater 88 lowers the temperature in a short time when switching from the heating state to the non-heating state. Therefore, the electric heater 88 is preferably a heater having a small heat capacity, and for example, a halogen heater can be used as the electric heater 88.
[ temperature control of treatment liquid ]
When a large amount of the processing liquid P is stored in the supply container 37, it is difficult to maintain the temperature of the processing liquid P supplied from the supply container 37 to the supply line L4 at a desired temperature. In particular, the greater the amount of the treatment liquid P stored in the supply tank 37, the more likely the temperature of the treatment liquid P becomes higher or lower than the desired temperature. On the other hand, in order to stably perform the liquid treatment of the substrate W, it is preferable to stably adjust the treatment liquid P in the supply line L4 to a desired temperature.
In order to adjust the temperature of the processing liquid P in the supply line L4 to a desired temperature, the processing liquid P stored in the supply tank 37 may be adjusted to a temperature higher than the desired temperature, and the processing liquid P in the supply line L4 may be adjusted to the desired temperature by adding the low-temperature processing liquid P. For example, a cooling liquid supply unit that supplies the low-temperature processing liquid P may be provided in at least one of the supply tank 37 and the supply line L4.
Fig. 21 is a diagram schematically showing a first embodiment of the treatment liquid temperature adjustment system.
In this embodiment, the temperature of the processing liquid P is adjusted by supplying the processing liquid P having a temperature lower than a desired temperature from the cooling liquid supply unit 101 to the supply container 37. That is, the cooling liquid supply unit 101 for supplying the low-temperature processing liquid P is provided in the supply container 37. The coolant supply unit 101 shown in fig. 21 includes a coolant supply unit 102, a coolant on-off valve 103, a coolant flow meter 108, and a coolant filter 104.
The cooling process liquid supply unit 102 sends the process liquid P having a temperature lower than a desired temperature to the cooling liquid line L11 connected to the inside of the supply container 37. The processing liquid P sent from the cooling processing liquid supply unit 102 to the cooling liquid line L11 may have a temperature lower than the ambient temperature or the same temperature as the ambient temperature.
The coolant on-off valve 103 opens and closes the coolant line L11 under the control of the controller 93. By closing the coolant line L11 with the coolant on-off valve 103, the low-temperature process liquid P sent from the coolant supply unit 102 to the coolant line L11 is not sent to the supply tank 37. On the other hand, when the coolant line L11 is opened by the coolant on-off valve 103, the low-temperature process liquid P sent from the coolant supply unit 102 to the coolant line L11 is sent to the supply tank 37.
The cooling flow meter 108 measures the flow rate of the low-temperature processing liquid P flowing through the cooling liquid line L11. The measurement result of the cooling flow meter 108 is sent to the control unit 93. The coolant filter 104 removes foreign matter from the processing liquid P in the coolant line L11 while allowing the processing liquid P to pass therethrough.
The supply tank 37 is provided with a liquid temperature measuring sensor 105 and a liquid level sensor 106. The liquid temperature measuring sensor 105 measures the temperature of the processing liquid P stored in the supply tank 37. The level sensor 106 measures the level of the processing liquid P stored in the supply tank 37. The measurement results of the liquid temperature measurement sensor 105 and the liquid level sensor 106 are sent to the control section 93.
The supply tank 37 is connected to a third drain line L12 in addition to the aforementioned guide line L2, open atmosphere line L9, gas line L3, coolant line L11, and supply line L4. The third drain line L12 is provided with a temperature adjustment on-off valve 107 and a drain flow meter 109. The temperature adjustment on-off valve 107 opens and closes the third liquid discharge line L12 under the control of the control unit 93. The drain flow meter 109 measures the flow rate of the treatment liquid P flowing in the third drain line L12. The measurement result of the liquid discharge flowmeter 109 is sent to the control unit 93.
The controller 93 of the present embodiment controls the second heating unit 36 to heat the processing liquid P stored in the supply tank 37 (i.e., the second heating zone Z2) such that the temperature of the processing liquid P stored in the supply tank 37 is higher than a desired temperature.
When it is determined from the measurement result of the liquid temperature measurement sensor 105 that the processing liquid P in the supply tank 37 has a temperature higher than the desired temperature, the control unit 93 discharges a predetermined amount of the processing liquid P from the supply tank 37 through the third drain line L12. That is, the controller 93 opens the third liquid discharge line L12 by controlling the temperature adjustment on-off valve 107, and discharges the high-temperature processing liquid P from the supply container 37 to the third liquid discharge line L12. When determining from the measurement result of the drain flowmeter 109 that the discharge amount of the high-temperature processing liquid P from the supply container 37 has reached the predetermined amount, the controller 93 controls the temperature adjustment on-off valve 107 to close the third drain line L12.
On the other hand, the low-temperature processing liquid P is supplied from the cooling liquid supply unit 101 to the supply tank 37 via the cooling liquid line L11. That is, the controller 93 controls the coolant opening/closing valve 103 to open the coolant line L11, and supplies the low-temperature processing liquid P from the coolant supply unit 101 to the supply tank 37. For example, in the case where the second heating part 36 heats the processing liquid P in the second heating zone Z2 to a first temperature, the cooling liquid supply unit 101 supplies the processing liquid P of a second temperature lower than the first temperature to the supply tank 37. When determining from the measurement result of the cooling flow meter 108 that the supply amount of the low-temperature processing liquid P to the supply container 37 has reached the predetermined amount, the control unit 93 controls the cooling liquid opening/closing valve 103 to close the cooling liquid line L11.
By supplying the low-temperature processing liquid P to the supply tank 37 while discharging the high-temperature processing liquid P from the supply tank 37 in this manner, the temperature of the processing liquid P sent from the supply tank 37 to the supply line L4 can be stably adjusted to a desired temperature.
The amount of the treatment liquid P discharged from the supply tank 37 via the third liquid discharge line L12 may be the same as or different from the amount of the treatment liquid P supplied to the supply tank 37 via the cooling liquid line L11. The amount of the treatment liquid P discharged from the supply tank 37 through the third liquid discharge line L12 may be a predetermined fixed amount or an amount determined based on the measurement result of the liquid temperature measurement sensor 105. The amount of the treatment liquid P supplied to the supply tank 37 via the coolant line L11 may be a fixed amount, may be an amount determined based on the amount of the treatment liquid P discharged from the supply tank 37, or may be an amount determined based on the measurement result of the liquid temperature measurement sensor 105.
Fig. 22 is a diagram schematically showing a second embodiment of the treatment liquid temperature adjustment system.
In this embodiment, the temperature of the processing liquid P is adjusted by supplying the processing liquid P having a temperature lower than a desired temperature from the coolant supply unit 101 to the supply line L4. That is, the coolant line L11 is not connected to the supply tank 37 but connected to the supply line L4, and the coolant supply unit 101 supplies the low-temperature processing liquid P to the supply line L4 through the coolant line L11.
The other structure is the same as that of the first embodiment (see fig. 21).
In this embodiment, the low-temperature treatment liquid P flowing into the supply line L4 through the coolant line L11 is mixed with the high-temperature treatment liquid P flowing into the supply line L4 from the supply tank 37, and the treatment liquid P is adjusted to a desired temperature in the supply line L4.
The amount of the low-temperature processing liquid P supplied from the coolant supply unit 101 to the supply line L4 is determined based on the temperature and the amount of the processing liquid P flowing from the supply container 37 into the supply line L4. The controller 93 obtains "the temperature of the processing liquid P flowing from the supply tank 37 into the supply line L4" from the measurement result of the liquid temperature measurement sensor 105, and obtains "the temperature of the processing liquid P flowing from the supply tank 37 into the supply line L4" from the measurement result of the flow meter 62. The control unit 93 determines "the amount of the low-temperature process liquid P to be supplied from the coolant supply unit 101 to the supply line L4" based on the measurement result of the liquid temperature measurement sensor 105 and the measurement result of the flow meter 62. Then, based on the measurement result of the cooling flow meter 108, the cooling liquid opening/closing valve 103 is controlled so that the determined amount of the low-temperature processing liquid P flows into the supply line L4 while monitoring "the amount of the low-temperature processing liquid P supplied from the cooling liquid supply unit 101 to the supply line L4".
In addition, in order to suppress temperature unevenness of the treatment liquid P in the supply line L4, it is preferable to stir the treatment liquid P.
Specifically, the temperature unevenness of the treatment liquid P in the supply line L4 can be suppressed by stirring the treatment liquid P in the supply line L4. For example, as shown in fig. 23, by providing an agitator 116 (agitator) inside the supply pipe 115 constituting the supply line L4, the processing liquid P is agitated by the agitator 116 while flowing through the supply line L4. The specific shape of the stirring body 116 is not limited, and the stirring body 116 may be formed by, for example, a static mixer.
Further, by stirring the treatment liquid P in the supply container 37, temperature unevenness of the treatment liquid P in the supply container 37 and the supply line L4 can be suppressed. For example, as shown in fig. 24, the processing liquid P in the supply container 37 can be stirred by the pressurizing gas N supplied from the pressurizing device 38 via the gas line L3. In the example shown in fig. 24, the pressurizing gas N is discharged from one end (stirring portion) of the gas line L3 in a state where the one end is positioned in the processing liquid P in the supply tank 37.
Further, by reducing the height of the supply tank 37 (i.e., the vertical dimension) or reducing the width of the supply tank 37 (i.e., the horizontal dimension), it is possible to suppress temperature variation of the processing liquid P in the supply line L4. For example, as shown in fig. 25, the second heating unit 36 may be provided so as to surround the supply container 37 from above, below, and in the horizontal direction, and the height of the supply container 37 may be reduced and the width may be increased. In this case, the portion of the processing liquid P stored in the supply container 37 that is away from the second heating unit 36 can be reduced to prevent uneven heating of the processing liquid P.
In addition, when the temperature of the processing liquid P in the supply tank 37 is likely to change due to the influence of the ambient temperature, it is difficult to stably maintain the temperature of the processing liquid P sent from the supply tank 37 to the supply line L4 at a desired temperature. Therefore, the supply container 37 is preferably configured to make the temperature of the processing liquid P in the supply container 37 less susceptible to the ambient temperature.
For example, as shown in fig. 26, the supply container 37 may have a heat insulating portion 37c, and heat transfer between the processing liquid P in the supply container 37 and the periphery of the supply container 37 are reduced by the heat insulating portion 37c. The supply container 37 shown in fig. 26 includes an inner structure 37a for storing the processing liquid P therein, an outer structure 37b provided outside the inner structure 37a, and a heat insulating portion 37c provided between the inner structure 37a and the outer structure 37 b. The heat insulating portion 37c exhibits a value that makes it difficult to transfer heat, for example, at least one of the thermal conductivity, thermal diffusivity, and heat transfer coefficient, as compared with the internal structure 37a. The heat insulating portion 37c may be formed of any gas, liquid, and/or solid, or may be formed of the same gas as the gas (for example, air) around the supply container 37. The supply container 37 shown in fig. 26 is integrated with the second heating unit 36, and the second heating unit 36 is attached to the inner structure 37a.
It should be noted that the embodiments disclosed in the present specification are illustrative in all aspects and should not be construed restrictively. The above-described embodiments and modifications can be omitted, replaced, and changed in various ways without departing from the scope and spirit of the present invention. For example, the above-described embodiment and modification may be combined, or embodiments other than the above-described embodiment may be combined with the above-described embodiment or modification.
The type of technique for embodying the technical idea is not limited. For example, the substrate liquid processing apparatus described above can be applied to other apparatuses. The technical idea described above may be embodied by a computer program for causing a computer to execute one or more steps (step) included in the substrate liquid processing method. The technical idea described above may be embodied by a non-transitory (non-transitory) recording medium in which such a computer program is recorded.

Claims (23)

1. A substrate liquid processing apparatus, comprising:
a supply container to the inside of which a processing liquid is supplied via a guide line;
a pressurizing device for pressurizing the inside of the supply container;
a discharge nozzle for discharging the supplied treatment liquid;
a supply line connected to the supply container and the discharge nozzle, and provided with no adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle;
a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line;
a liquid flow regulating mechanism provided in the first drain line and restricting passage of the treatment liquid at a pressure lower than a set pressure; and
a control part for adjusting the set pressure.
2. The substrate liquid processing apparatus according to claim 1, wherein:
the discharge nozzle is located above the supply container and the liquid flow adjustment mechanism,
the control part is used for controlling the operation of the motor,
adjusting the set pressure to be equal to or higher than a peak head pressure at a height position of a highest portion in the supply line from the supply container to the discharge nozzle when the processing liquid is supplied to the discharge nozzle,
the set pressure is adjusted to be lower than the peak head pressure without supplying the processing liquid to the discharge nozzle.
3. The substrate liquid processing apparatus according to claim 1 or 2, comprising:
a second drain line connected to the supply line; and
a suction mechanism provided in the second drain line and capable of switching between a suction mode in which the supply line is sucked through the second drain line and a non-suction mode in which the supply line is not sucked through the second drain line,
the control unit at least temporarily adjusts the suction mechanism to the suction mode without supplying the processing liquid to the discharge nozzle.
4. The substrate liquid processing apparatus according to claim 3, wherein:
the suction mechanism includes: a mode switching valve disposed in the second drain line; a negative pressure container connected to the second drain line; and a negative pressure regulator for regulating the negative pressure container to a negative pressure state,
the control part is used for controlling the operation of the motor,
controlling the mode switching valve to close a flow path of the second drain line between the supply line and the negative pressure container, thereby adjusting the suction mechanism to the non-suction mode,
controlling the mode switching valve to open a flow path of the second drain line between the supply line and the negative pressure container, thereby adjusting the suction mechanism to the suction mode.
5. The substrate liquid processing apparatus according to claim 3 or 4, wherein:
a liquid detection sensor that detects the presence or absence of the processing liquid at a first measurement location on a downstream side of the first branch portion in the supply line,
the control unit switches the suction mechanism from the suction mode to the non-suction mode based on a detection result of the liquid detection sensor.
6. The substrate liquid processing apparatus according to any one of claims 1 to 5, wherein:
a flow meter that measures a flow rate of the treatment liquid at a second measurement point located on a downstream side of the first branch portion in the supply line,
the control portion adjusts the set pressure based on a measurement result of the flow meter.
7. A substrate liquid processing apparatus, comprising:
a supply container to the inside of which a processing liquid is supplied via a guide line;
a pressurizing device for pressurizing the inside of the supply container;
a discharge nozzle for discharging the supplied treatment liquid;
a supply line connected to the supply container and the discharge nozzle, and provided with no adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle;
a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line;
a liquid flow adjusting mechanism that adjusts the flow of the treatment liquid in the first drain line;
a liquid flow switching mechanism provided in the first branch portion, the liquid flow switching mechanism switching whether or not to flow a portion of the supply line that connects the first branch portion and the discharge nozzle, with the treatment liquid, in accordance with a flow of the treatment liquid in the first drain line; and
and a control unit for controlling the liquid flow adjusting mechanism.
8. The substrate liquid processing apparatus according to claim 7, wherein:
comprises a movably arranged arm, wherein the liquid flow switching mechanism and the ejection nozzle are arranged on the arm.
9. The substrate liquid processing apparatus according to any one of claims 1 to 8, comprising:
an atmosphere opening line connecting an inside of the supply container with an environment around the supply container; and
an atmosphere opening valve provided in the atmosphere opening line,
the control unit controls the atmosphere opening valve to close the atmosphere opening line when the processing liquid is supplied to the discharge nozzle.
10. The substrate liquid processing apparatus according to any one of claims 1 to 9, wherein:
comprising a storage unit connected to the supply container via a pilot line,
the storage unit includes: a plurality of storage containers; a plurality of circulation lines connecting the plurality of storage vessels to each other; a filter that removes foreign substances from the treatment liquid flowing in at least any one of the plurality of circulation lines; and a circulation adjusting mechanism that circulates the treatment liquid between the plurality of storage units via the plurality of circulation lines.
11. The substrate liquid processing apparatus according to claim 10, wherein:
the first drain line is connected to at least any one of the plurality of storage containers,
the treatment liquid having passed through the liquid flow adjusting mechanism flows into at least any one of the plurality of storage containers through the first drain line.
12. The substrate liquid processing apparatus according to any one of claims 1 to 11, wherein:
the pressurizing device includes: a gas supply unit for allowing a gas to flow through a gas line connected to the inside of the supply container; and a gas pressure adjusting section that adjusts a pressure of the gas flowing in the gas line,
the air pressure adjusting part is an electro-pneumatic adjuster.
13. The substrate liquid processing apparatus according to any one of claims 1 to 12, comprising:
a heating unit that heats the processing liquid set in a heating area of at least one of the guide line and the supply container; and
a filter that removes foreign matter from the treatment liquid flowing through the treatment liquid flow path at a portion upstream of the heating zone,
in the flow path of the treatment liquid from the guide line to the discharge nozzle, the filter for removing foreign matter from the treatment liquid is not provided in the heating zone and the flow path on the downstream side of the heating zone.
14. The substrate liquid processing apparatus according to claim 13, wherein:
the heating zone comprises a first heating zone set on the guide line,
the heating section includes a first heating section that heats the processing liquid in the first heating zone,
the first heating section heats the treatment liquid in the first heating zone with a temperature adjustment liquid having a higher temperature than the treatment liquid in the first heating zone.
15. The substrate liquid processing apparatus according to claim 14, wherein:
the first heating part includes:
a temperature regulation vessel, the first heating zone being located inside the temperature regulation vessel;
a flow path switching unit that selectively introduces the temperature-adjusting liquid and a purge gas into the temperature-adjusting container; and
a gas-liquid discharge line connected to the temperature regulation vessel,
the flow path switching unit introduces the purge gas into the temperature control container in a state where the temperature control liquid is stored in the temperature control container, and thereby the temperature control liquid is discharged from the temperature control container to the gas-liquid discharge line.
16. The substrate liquid processing apparatus according to any one of claims 13 to 15, wherein:
comprises an overflow pipeline which is connected with the guide pipeline and is provided with an overflow valve.
17. The substrate liquid processing apparatus according to claim 13, wherein:
the heating part includes an electric heater.
18. The substrate liquid processing apparatus according to any one of claims 13 to 17, wherein:
includes a cooling liquid supply unit that supplies the processing liquid to at least either one of the supply container and the supply line,
the heating zone comprises a second heating zone set in the supply vessel,
the heating section includes a second heating section that heats the treatment liquid in the second heating section to a first temperature,
the cooling liquid supply unit supplies the processing liquid at a second temperature lower than the first temperature to at least one of the supply container and the supply line.
19. The substrate liquid processing apparatus according to any one of claims 13 to 18, wherein:
the apparatus includes an agitation unit that agitates the treatment liquid in at least one of the supply container and the supply line.
20. The substrate liquid processing apparatus according to any one of claims 13 to 19, wherein:
the heating unit is provided so as to surround the supply container from above, below, and in the horizontal direction.
21. The substrate liquid processing apparatus according to any one of claims 1 to 20, wherein:
the supply container includes a heat insulating portion.
22. A substrate liquid processing method is characterized in that:
the substrate liquid processing apparatus includes: a supply container to the inside of which a processing liquid is supplied via a guide line; a pressurizing device for pressurizing the inside of the supply container; a discharge nozzle for discharging the supplied treatment liquid; a supply line connected to the supply container and the discharge nozzle, and provided with no adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle; a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line; and a liquid flow regulating mechanism provided in the first drain line for restricting passage of the treatment liquid at a pressure lower than a set pressure,
the substrate liquid processing method comprises the following steps: in the substrate liquid processing apparatus, the processing liquid is supplied from the supply container to the discharge nozzle through the supply line by pressurizing the inside of the supply container by the pressurizing device.
23. A substrate liquid processing method is characterized in that:
the substrate liquid processing apparatus includes: a supply container to the inside of which a processing liquid is supplied via a guide line; a pressurizing device for pressurizing the inside of the supply container; a discharge nozzle for discharging the supplied treatment liquid; a supply line connected to the supply container and the discharge nozzle, and not provided with an adjustment mechanism for variably restricting a flow path connecting the supply container and the discharge nozzle; a first drain line connected to a first branch portion between the supply container and the ejection nozzle in the supply line; a liquid flow adjusting mechanism that adjusts the pressure of the treatment liquid in the first drain line; and a liquid flow switching mechanism provided in the first branch portion, for switching whether or not to flow the treatment liquid in a portion of the supply line connecting the first branch portion and the discharge nozzle, in accordance with the pressure of the treatment liquid in the first drain line,
the substrate liquid processing method comprises the following steps: in the substrate liquid processing apparatus, the pressurizing device pressurizes the inside of the supply container, and the processing liquid is supplied from the supply container to the discharge nozzle through the supply line.
CN202180032981.6A 2020-05-12 2021-04-30 Substrate liquid processing apparatus and substrate liquid processing method Pending CN115516606A (en)

Applications Claiming Priority (3)

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JP2020-084009 2020-05-12
JP2020084009 2020-05-12
PCT/JP2021/017152 WO2021230103A1 (en) 2020-05-12 2021-04-30 Substrate solution treatment device and substrate solution treatment method

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