CN115513025A - Excitation radio frequency system of plasma etching machine - Google Patents
Excitation radio frequency system of plasma etching machine Download PDFInfo
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- CN115513025A CN115513025A CN202110697971.6A CN202110697971A CN115513025A CN 115513025 A CN115513025 A CN 115513025A CN 202110697971 A CN202110697971 A CN 202110697971A CN 115513025 A CN115513025 A CN 115513025A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention belongs to the technical field of semiconductor chip production equipment, in particular to an excitation radio frequency system of a plasma etcher, wherein the plasma etcher comprises a plasma reaction cavity, and the excitation radio frequency system comprises: a dielectric window configured as a top wall of the plasma reaction chamber; the radio frequency coil is arranged above the dielectric window; the heating element is attached to the upper surface of the dielectric window and is in direct contact with the dielectric window, and the heating element is positioned between the radio frequency coil and the dielectric window; a temperature equalization layer laid above the heating element and in direct contact with the heating element. The invention can thoroughly clean the bottom surfaces of the medium window and the air inlet nozzle, and the bombardment by-products are pumped away by the bottom air pump set.
Description
Technical Field
The invention belongs to the technical field of semiconductor chip production equipment, and particularly relates to an excitation radio frequency system of a plasma etcher.
Background
At present, non-volatile materials such as Pt, ru, ir, niFe, au and the like are mainly subjected to dry etching by Inductively Coupled Plasma (ICP). Inductively coupled plasma is typically generated by a coil positioned outside the plasma processing chamber adjacent to a dielectric window, and the process gases within the chamber are ignited to form a plasma. But it is inevitable, and at the same time somewhat undesirable, that the voltage between the different parts of the rf coil capacitively couples to the plasma, and while this coupling promotes ignition and stabilization, the capacitively coupled parts may cause a locally intensified voltage across the plasma sheath, which may accelerate ions away from the plasma to locally affect the dielectric window, resulting in local sputtering damage. In other cases, capacitive coupling may result in localized deposition. Sputtering can be concentrated in the region directly below the coil. During wafer processing, sputtering can cause damage to the surface coating on the dielectric window, and then particles can fall off and can land on the produced wafer causing defects. During the waferless cleaning process to remove such particles, the cleaning will also be uneven, with most cleaning being directly under the coil and the areas away from the coil being only slightly cleaned, resulting in uneven cleaning of the window, which can still produce contaminants to cause wafer defects. During the dry etching process of non-volatile materials, reaction products are difficult to be pumped away by a vacuum pump due to low vapor pressure of the reaction products, so that the reaction products are deposited on the inner walls of dielectric windows and other plasma processing chambers. This not only produces particle contamination, but also causes the process to drift over time, reducing process repeatability. Cleaning of the plasma processing chamber is therefore required. However, in actual use, cleaning will cause process interruption, reducing the production efficiency of the plasma processing apparatus.
With the continuous development and integration of the third generation memory, magnetic memory (MRAM), in recent years, the dry etching requirement for the novel non-volatile materials such as metal gate materials (e.g., model, ta, etc.) and high-k gate dielectric materials (e.g., al2O3, hfO2, zrO2, etc.) is increasing, and it is necessary to solve the sidewall deposition and particle contamination of the non-volatile materials during the dry etching process and to improve the cleaning process efficiency of the plasma processing chamber.
In general, dielectric window heating is an important means of reducing deposition.
At present, the existing plasma etching machine dielectric window is heated by adopting a warm air heating mode, but the heating mode has the problems that the heating efficiency is low due to the fact that warm air is scattered, the side wall outside the dielectric window is easy to generate high temperature, an operator is easy to scald, components are easy to damage and the like, a very complicated protection device is needed, the cost is high, and heat dissipation is not facilitated.
As shown in fig. 1, which is a heating technology of a dielectric window of a conventional plasma etcher, the main components of the heating technology are a radio frequency coil 1, a dielectric window 2, a metal inner shield 3, a heating net 4, a heat-supplying fan 5 and an outer shield 6. The radio frequency coil 1 generates plasma to penetrate through the dielectric window 2 for processing, the heating net 4 generates heat, the heat is blown to the dielectric window 2 by the heat sending fan 5 according to the direction shown by the arrow of the schematic diagram for heating, the temperature of the metal inner shielding cover 3 is higher and higher along with the wind heat, the metal inner shielding cover is easy to damage an operator, and the outer shielding cover 6 is arranged for protection. The method has the disadvantages that on one hand, the heat sent by the fan is dissipated, the heating efficiency is low, on the other hand, the coil and other electrical elements such as a matcher are simultaneously heated, the electrical elements are high in temperature and easy to damage, the shielding cover is high in temperature and hurt people, and the other shielding covers are arranged outside, so that the structure is complex, the extra space is occupied, and the cost is increased.
The heating of the medium window of the existing plasma etcher is also realized by adding a heating plate device (as shown in figure 2) at the top of the medium window, wherein the heating plate 7 is arranged between the radio frequency coil 1 and the medium window 2, although the heating plate 7 is optimized in heating rate and occupied space in comparison with the last heating mode, the heating plate 7 is strictly attached to the medium window 2, the process which can not generate any bubbles is a great risk point, and the heating plate and the local bubbles of the medium window in different degrees cause local overheating and damage burning accidents in the application process.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides an excitation radio frequency system of a plasma etching machine.
In order to achieve the purpose, the invention adopts the following technical scheme:
an excitation radio frequency system of a plasma etcher, the plasma etcher comprising a plasma reaction chamber, the excitation radio frequency system being provided at the top of the plasma reaction chamber, the excitation radio frequency system comprising:
a dielectric window configured as a top wall of the plasma reaction chamber;
the radio frequency coil is arranged above the dielectric window;
the heating element is attached to the upper surface of the dielectric window and is in direct contact with the dielectric window, and the heating element is positioned between the radio frequency coil and the dielectric window;
the temperature-uniforming layer is paved above the heating element and is in direct contact with the heating element.
As a further preferable mode, the heating element includes a heating wire, the heating wire can be laid into any shape unit, the shape unit includes a plurality of shape units which radiate outwards from the center of the medium window in the radial direction, the shape units are arranged at intervals uniformly along the circumferential direction of the medium window and are connected in sequence, and the temperature uniforming layer is shaped along with the heating element.
As a further preferable mode, each of the shape units is formed in an elongated structure formed by extending both ends of the heating wire in parallel with each other.
As a further preferable scheme, each of the shape units is formed in a fan-shaped structure, the fan-shaped structure is formed by bending and extending two ends of the heating wire in a shape of a Chinese character 'gong', and the two ends of the heating wire are symmetrically distributed.
As a further preferred aspect, the excitation radio frequency system further comprises: the insulating layer is wrapped outside the heating element, and the insulating layer is arranged between the heating element and the temperature homogenizing layer.
As a further preferred option, said insulating layer is provided between the heating element and the upper surface of said dielectric window.
As a further preferable scheme, the insulating layer is wrapped outside the temperature uniforming layer.
As a further preferred aspect, the excitation rf system further comprises: first matching network and first excitation radio frequency power supply, even temperature layer is Faraday even temperature layer, first matching network connects first excitation radio frequency power supply with between the Faraday even temperature layer.
As a further preferred aspect, the excitation radio frequency system further comprises: a second matching network and a second excitation radio frequency power supply, the second matching network connected between the second excitation radio frequency power supply and the radio frequency coil.
As a further preferred aspect, the excitation radio frequency system further comprises: heating system, heating system is including the heating power supply, solid state relay, temperature controller and the temperature sensor that connect gradually, the heating power supply passes through after the circular telegram solid state relay switch-on heating element, the temperature sensor is established be used for detecting on the even temperature layer the temperature on even temperature layer, temperature controller connects solid state relay with between the temperature sensor, the temperature signal transmission that the temperature sensor gathered extremely temperature controller, temperature controller will temperature signal handles to feedback signal and transmission extremely solid state relay for control connection circuit's closure.
A plasma etcher comprising:
a plasma reaction chamber;
the plasma processing device comprises an excitation radio frequency system, a gas source and a plasma cavity, wherein a medium window of the excitation radio frequency system is provided with a gas hole, and the gas source introduces reaction gas into the plasma cavity through the gas hole;
the wafer and the electrode are fixed in the plasma reaction cavity, and the wafer is supported on the electrode;
the vacuum processing assembly comprises a pressure control valve and a vacuum pump, and the pressure control valve is connected between the plasma reaction cavity and the vacuum pump.
Compared with the prior art, the invention provides the excitation radio frequency system of the plasma etching machine, the excitation radio frequency system has high heating rate, small occupied space and good temperature-equalizing effect, can avoid the condition that the heating plate and the medium window are damaged due to the generation of bubbles, and simultaneously adopts a Faraday disc cleaning mode to provide a reliable solution for thoroughly cleaning the medium window and the air inlet nozzle; meanwhile, the condition that the heating plate and the medium window are damaged due to the generation of bubbles is avoided, and the medium window and the air inlet nozzle are thoroughly cleaned by adopting a Faraday disc cleaning mode.
Drawings
FIG. 1 is a schematic diagram of a conventional heating technology for a dielectric window of a plasma etcher;
FIG. 2 is a schematic structural diagram of a conventional plasma etcher with a heating plate added to a dielectric window;
FIG. 3 is a schematic view of a dielectric window construction of the present invention;
FIG. 4 is a schematic view of the overall structure of the present invention;
FIG. 5 is a layout view of a rectangular heater wire according to the present invention;
FIG. 6 is a layout of a rectangular Faraday homothermal layer of the present invention;
FIG. 7 is a layout view of a trapezoidal heating wire according to the present invention;
FIG. 8 is a layout of a trapezoidal Faraday homothermal layer of the present invention;
FIG. 9 is a side view of the present invention;
FIG. 10 is a cross-sectional view of a Faraday homothermal layer and a heater wire of the present invention;
FIG. 11 is a schematic diagram of the operation of two heating systems of the present invention;
FIG. 12 is a graph showing a comparison of the temperature of a dielectric window with and without a Faraday temperature leveler in the present invention;
fig. 13 shows the performance of the invention on the dielectric window and the air inlet nozzle MTBC.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Based on above-mentioned current scheme heating efficiency, other electrical parts all can receive the high temperature to influence the scheduling problem during heating, consider the mode of direct heating on dielectric window 2, directly paste hot plate 7 on dielectric window 2 promptly, but the hot plate 7 of ordinary overall arrangement can produce the shielding to plasma, and directly paste hot plate 7 and produce the bubble easily, local overheated damage part during the heating, it is long simultaneously in order to prolong MTBC (the length of time of two times of opening the chamber and cleaning the interval), it is long when the simple MTBC that has can't satisfy enough long MTBC that reduces the deposit by the heating of dielectric window.
The excitation radio frequency system of the plasma etcher comprises a plasma etcher and an excitation radio frequency system, wherein the excitation radio frequency system is arranged at the top of a plasma reaction cavity, and the structure of the plasma etcher comprises: a dielectric window 2, the dielectric window 2 is configured as the top wall of the plasma reaction chamber 22; the radio frequency coil 1, the said radio frequency coil 1 is set up above the said dielectric window 2; the heating element is attached to the upper surface of the dielectric window 2 and is in direct contact with the dielectric window 2, and the heating element is positioned between the radio frequency coil 1 and the dielectric window 2; the temperature equalizing layer 4 is paved above the heating element and is in direct contact with the heating element, and the heating element adopts a heating wire 9.
The plasma etching machine comprises a shielding case 8, a pressure control valve 23 is arranged at an opening at the lower part of the shielding case 8, a vacuum pump 24 is arranged on the pressure control valve 23, a medium window 2 is positioned in the shielding case 8, the medium window 2 is of a circular structure, the shielding case 8 is internally divided into an upper space and a lower space, the lower space is a plasma reaction cavity 22, a substrate sheet 18 is positioned in the plasma reaction cavity 22, an air hole is formed in the center of the medium window 2, a gas source 12 is externally connected to the air hole, a heating wire 9 is arranged on the medium window 2, a Faraday temperature equalizing layer 4 is arranged on the upper surface of the heating wire 9, the heating wire 9 can be laid into any shape unit, a plurality of shape units are arranged in a central symmetry mode by taking the air hole as the center, a gap is formed between every two adjacent shape units, and the Faraday temperature equalizing layer 4 is the same as the laying shape of the heating wire 9;
the heating wire 9 is externally connected with a heating system, the radio frequency coil 1 is arranged on the heating wire 9 in a coiled shape, the radio frequency coil 1 is externally connected with a radio frequency system, the radio frequency coil 1 generates plasma 17, and the plasma 17 and the reaction gas introduced by the gas source 12 jointly etch the substrate sheet 18.
The plasma reaction chamber 22 is internally provided with an electrode, the substrate slice 18 is arranged on the electrode 20, the wafer is arranged on the substrate slice 18, the electrode 20 is positioned below the air hole at the center of the dielectric window 2, and the electrode 20 is externally connected with a radio frequency system.
The specific etching process and principle are as follows: the gas source 12 is filled with reaction gas, the radio frequency coil 1 generates plasma 17 under the combined action of the first excitation radio frequency power supply 31, the first matching network 30, the second matching network 32 and the second excitation radio frequency power supply 33, and the electrode 20 is filled with radio frequency to guide the plasma downwards to etch the wafer.
The radio frequency coil 1 generates plasma 17 in the plasma reaction chamber 22 under the combined action of the first excitation radio frequency power supply 31 and the second excitation radio frequency power supply 33, the gas source 12 introduces reaction gas to etch the substrate sheet 18 together, reaction products in the etching process are continuously deposited on the lower surface of the medium window 2 in the plasma reaction chamber 22, the heating wire 9 is attached to the upper surface of the medium window 2, and the radio frequency coil 1 is positioned above the heating wire 9.
The heating wire 9 is directly heated to the medium window 2 by electrifying the heating wire 9; meanwhile, the problem that the heating wire 9 is locally overheated due to air bubbles generated between the heating wire 9 and the medium window 2 during heating, and parts are damaged is solved.
The heating wires 9 can be laid into any shape unit, the shape unit comprises a plurality of shape units which are radially and outwards radiated from the center of the medium window 2, the shape units are uniformly distributed at intervals along the circumferential direction of the medium window 2 and are sequentially connected, and the temperature equalization layer 4 and the heating element are shaped.
The heating wires 9 are arranged in a one or a plurality of layout modes, a plurality of same structures are arranged around the air holes in a central symmetry mode, and gaps are reserved among the heating wires 9 in each group, so that the heating wires can heat the medium window and can avoid influencing passing through plasma after being electrified (as shown in figure 5).
Meanwhile, the appearance structure of the Faraday temperature equalization layer 4 is kept the same as that of the heating wire 9 (as shown in figure 6), the Faraday temperature equalization layer 4 can be integrated or segmented, and the Faraday temperature equalization layer 4 is simple in structure and does not need extra protection. In conclusion, the invention has the advantages of high heating efficiency, simple structure, good temperature homogenizing effect, great improvement of MTBC duration and the like.
As shown in fig. 7, an insulating layer 41 is wrapped outside the heating wire 9, preferably Kapton, the heating wire 9 and the dielectric window 2 are fixed by adhesion, the insulating layer may not be added in the middle, and the faraday temperature equalizing layer 4 and the heating wire 9 are isolated by the insulating layer 41;
specifically, the arrangement structure of the heating wires 9 is eight strip-shaped structures formed by winding one heating wire 9, the shape units laid by the heating wires 9 are strip-shaped structures, the Faraday temperature equalization layer 4 is also eight strip-shaped structures with central symmetry, the eight strip-shaped structures are arranged around the air hole, two heating wires 9 which are parallel to each other are arranged in one strip-shaped structure, and the strip-shaped structures are positioned on the radius of a circle with the air hole as the center of the circle; the Faraday temperature equalization layer 4 is of a plurality of strip structures, and the strip structures correspond to the strip structures formed by winding the heating wires 9 one by one.
Preferably, the arrangement structure of the heating wires 9 is a plurality of fan-shaped structures wound by one heating wire 9, the shape units laid by the heating wires 9 are fan-shaped structures, the faraday temperature equalization layer 4 is also a plurality of fan-shaped structures with central symmetry, the plurality of fan-shaped structures are arranged around the air holes, the lower bottoms of the fan-shaped structures are sequentially close to the air holes, and the fan-shaped structures are positioned on the radius of a circle with the air holes as the center of the circle; the fan-shaped structure is composed of two groups of continuous bow-shaped bending structures formed by folding the heating wires 9, and the width of one end of each bow-shaped bending structure, which is close to the air hole, is smaller than that of the other end of each bow-shaped bending structure.
Meanwhile, the appearance structure of the Faraday temperature equalization layer 4 is kept the same as that of the heating wire 9, the outer diameter D1 of the Faraday temperature equalization layer 4 of a plurality of fan-shaped structures is larger than or equal to the diameter D3 of the medium window 2 in the plasma etching cavity, the inner diameter D2 of the central circular structure of the Faraday temperature equalization layer 4 is matched with the middle air inlet outer diameter, the angle A of a gap between every two adjacent fan-shaped structures is 2-15 degrees, the angle B of the fan-shaped structures is preferably 5 degrees, the angle B of the fan-shaped structures is 5-20 degrees, and the angle is preferably 13 degrees; the Faraday temperature equalization layer 4 is of a plurality of fan-shaped structures, and the fan-shaped structures correspond to the strip-shaped structures formed by winding the heating wires 9 one by one.
Any manner similar to the figures shown in the patent or only changing the number of the heating wire groups, etc., should be considered as equivalent, and the heating wires may be composed of a single or multiple wires.
The heating system comprises a heating power supply 15, a solid-state relay 14 and a temperature controller 13 which are connected in sequence, wherein the temperature controller 13 is arranged on the radio frequency coil 1.
The heating system is provided with at least two temperature controllers 13, and the two temperature controllers 13 are respectively arranged at the inner ring and the outer ring of the radio frequency coil 1; the temperature controller 13 is also provided with a temperature sensor 16 at the position of the radio frequency coil 1.
The heating system sets up certain heating temperature upper limit through temperature controller 13, heating power supply 15 circular telegram passes through solid state relay 14 and lets in heater strip 9, temperature measurement sensor 16 induction heating temperature, data is given temperature controller 13 in the transmission, feedback signal passes through solid state relay 14 control circuit disconnection after reaching temperature controller 13 set temperature, when the temperature drop is less than the set temperature, temperature measurement sensor 16 detects the temperature drop and again the feedback signal is closed through solid state relay 14 control circuit for heating for temperature controller 13 again in the transmission, so, realize the stable heating to dielectric window 2 (as shown in figure 8). In addition, in order to avoid failure of the temperature measuring sensor 16 or the temperature controller 13, another protection is set, so that the dielectric window 2 is heated; according to the physical principle, the gap reserved between the filament groups of the heating filament 9 ensures that the device does not influence the electric field of the radio frequency coil 1 to pass through, namely, does not influence the plasma intensity formed by the radio frequency coil 1 in the ion reaction cavity; in addition, the heating wire 9 is directly attached to the dielectric window 2, and the heating wire 9 directly heats the dielectric window 2, so that heat loss is small.
An insulating layer 41 is wrapped on the periphery of the heating wire 9, a Faraday temperature-uniforming layer 4 is further arranged between the heating wire 9 and the radio-frequency coil 1, and the Faraday temperature-uniforming layer 4 is arranged along the heating wire 9; the Faraday temperature-uniforming layer 4 is additionally attached to the upper part of the heating wire 9, the Faraday temperature-uniforming layer 4 and the heating wire 9 are in the same shape layout and are tightly bonded, excellent heat conductors (aluminum, copper and the like) are selected as materials to play an excellent temperature-uniforming function, the Faraday temperature-uniforming layer 4 is simultaneously used as a Faraday radio frequency access electrode, and the heating wire 9 and the Faraday temperature-uniforming layer 4 are mutually insulated. Furthermore, the invention designs the shape of the heating plate, avoids or reduces the influence of the heating plate on the plasma by reserving gaps and the like, and the shape of the heating plate is matched with the shape of the Faraday temperature-uniforming layer 4.
The upper layer of the heating wire 9 is covered with the Faraday temperature equalizing layer 4, so that a good temperature equalizing effect is achieved, as shown in fig. 9, when only the heating wire 9 exists, due to the structural characteristics, the density of the heating wire 9 in the central area of each medium window 2 is large, the whole medium window 2 tends to have high central temperature, the trend is more obvious in the technical process, and the central temperature and the edge temperature of the medium window 2 tend to be consistent after the Faraday temperature equalizing layer 4 is added.
The radio frequency system comprises two sets of matching networks and an excitation radio frequency power supply, wherein one matching network is connected with a radio frequency coil 1 through a circuit, and the other matching network is connected with a Faraday temperature equalization layer 4 through a 30-circuit; the Faraday temperature-uniforming layer 4 is in a suspension state in the technical process, and acts with the medium window 2 together with the heating wire 9 to play a role in temperature uniforming and reduce the contamination of the medium window 2, when the process is finished, the Faraday temperature-uniforming layer 4 is switched to a Faraday cleaning mode, the Faraday temperature-uniforming layer 4 is connected with radio frequency at the moment, high negative pressure is formed on the bottom surface of the medium window, plasmas in a plasma reaction cavity bombard the bottom surface of the medium window 2 to thoroughly clean the bottom surfaces of the medium window 2 and the air inlet nozzle, bombarded by-products are pumped away by a bottom air suction pump group, and as shown in figure 10 for comparison based on the current data, the Faraday temperature-uniforming layer structure can be greatly optimized for the medium window and the air inlet nozzle MTBC.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered as the technical solutions and the inventive concepts of the present invention within the technical scope of the present invention.
Claims (11)
1. An excited radio frequency system of a plasma etcher, the excited radio frequency system being characterized in that the plasma etcher comprises a plasma reaction chamber (22), the excited radio frequency system being arranged at the top of the plasma reaction chamber (22), the excited radio frequency system comprising:
a dielectric window (2), the dielectric window (2) being configured as a top wall of the plasma reaction chamber (22);
the radio frequency coil (1), the said radio frequency coil (1) is set up above the said dielectric window (2);
the heating element is attached to the upper surface of the dielectric window (2) and is in direct contact with the dielectric window (2), and the heating element is positioned between the radio frequency coil (1) and the dielectric window (2);
a temperature equalization layer (4), the temperature equalization layer (4) being laid above the heating element and in direct contact with the heating element.
2. The excited radio frequency system of a plasma etcher as claimed in claim 1, wherein the heating element comprises a heating wire (9), the heating wire (9) can be laid out in any shape unit, the shape unit comprises a plurality of shape units which radiate from the center of the dielectric window (2) radially outwards, the shape units are uniformly arranged at intervals along the circumferential direction of the dielectric window (2) and are connected in sequence, and the temperature equalizing layer (4) is conformal with the heating element.
3. The system of claim 2, wherein each of the shape units is formed as an elongated structure formed by extending both ends of the heating wire (9) in parallel with each other.
4. The excited radio-frequency system of a plasma etching machine according to claim 2, wherein each of the shape units is formed as a fan-shaped structure which is formed by bending and extending two ends of the heating wire (9) in a bow shape respectively, and the two ends of the heating wire (9) are symmetrically distributed.
5. The excited radio frequency system of a plasma etching machine as claimed in claim 1, further comprising: the insulating layer (41) wraps the heating element, and the insulating layer (41) is arranged between the heating element and the temperature-uniforming layer (4).
6. The system of claim 5, wherein said insulating layer (41) is disposed between said heating element and the upper surface of said dielectric window (2).
7. The system of claim 5, wherein said insulating layer (41) is wrapped around said temperature-uniforming layer (4).
8. The excited radio frequency system of a plasma etching machine as claimed in any one of claims 1 to 6, further comprising: first matching network (30) and first excitation radio frequency power supply (31), even temperature layer (4) are Faraday even temperature layer, first matching network (30) are connected first excitation radio frequency power supply (31) with between the Faraday even temperature layer.
9. The excited radio frequency system of a plasma etching machine as claimed in any one of claims 1 to 7, further comprising: a second matching network (32) and a second excitation radio frequency power supply (33), the second matching network (32) being connected between the second excitation radio frequency power supply (33) and the radio frequency coil (1).
10. The excited radio frequency system of a plasma etcher as claimed in any one of claims 1 to 7, further comprising: heating system, heating system is including the heating power supply (15), solid state relay (14), temperature controller (13) and the temperature sensor (16) that connect gradually, pass through after heating power supply (15) circular telegram solid state relay (14) switch-on heating element, temperature sensor (16) are established be used for detecting on even temperature layer (4) the temperature on even temperature layer (4), temperature controller (13) are connected solid state relay (14) with between temperature sensor (16), the temperature signal transmission that temperature sensor (16) gathered extremely temperature controller (13), temperature controller (13) will temperature signal handles as feedback signal and transmits to solid state relay (14) for control connecting circuit's closure.
11. A plasma etcher, comprising:
a plasma reaction chamber (22);
the excited radio frequency system of any of claims 1-10 having a gas hole in a dielectric window of the excited radio frequency system through which a gas source (12) passes a reactant gas into the plasma chamber;
the plasma reaction chamber comprises a wafer and an electrode, wherein the electrode is fixed in the plasma reaction chamber and is supported on the electrode;
the vacuum processing assembly comprises a pressure control valve and a vacuum pump, and the pressure control valve is connected between the plasma reaction cavity and the vacuum pump.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110697971.6A CN115513025A (en) | 2021-06-23 | 2021-06-23 | Excitation radio frequency system of plasma etching machine |
| KR1020237024709A KR20230119721A (en) | 2021-06-23 | 2021-12-09 | Plasma Etcher's Excitation RF System |
| PCT/CN2021/136737 WO2022267371A1 (en) | 2021-06-23 | 2021-12-09 | Excitation radio-frequency system of plasma etching machine |
| TW110146816A TWI825527B (en) | 2021-06-23 | 2021-12-14 | PLASMA ETCHING MACHINE AND EXCITATION RADIO FREQUENCY SYSTEM of PLASMA ETCHING MACHINE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110697971.6A CN115513025A (en) | 2021-06-23 | 2021-06-23 | Excitation radio frequency system of plasma etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115513025A true CN115513025A (en) | 2022-12-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110697971.6A Pending CN115513025A (en) | 2021-06-23 | 2021-06-23 | Excitation radio frequency system of plasma etching machine |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20230119721A (en) |
| CN (1) | CN115513025A (en) |
| TW (1) | TWI825527B (en) |
| WO (1) | WO2022267371A1 (en) |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020100557A1 (en) * | 2001-01-29 | 2002-08-01 | Applied Materials, Inc. | ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window |
| US6674241B2 (en) * | 2001-07-24 | 2004-01-06 | Tokyo Electron Limited | Plasma processing apparatus and method of controlling chemistry |
| JP2011258622A (en) * | 2010-06-07 | 2011-12-22 | Tokyo Electron Ltd | Plasma processing apparatus and its dielectric window structure |
| US9745663B2 (en) * | 2012-07-20 | 2017-08-29 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with symmetrical flow chamber |
| CN103681300A (en) * | 2012-08-30 | 2014-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma treatment device |
| CN104183451A (en) * | 2013-05-22 | 2014-12-03 | 中微半导体设备(上海)有限公司 | Faraday shield device capable of realizing rapid heat radiation and plasma processing device |
| US10510511B2 (en) * | 2013-10-31 | 2019-12-17 | Semes Co., Ltd. | Apparatus for treating substrate |
| CN104717817A (en) * | 2013-12-12 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Heating device used for radio frequency window of inductive coupling-type plasma processor |
| US20180233321A1 (en) * | 2017-02-16 | 2018-08-16 | Lam Research Corporation | Ion directionality esc |
| CN110301030B (en) * | 2017-02-20 | 2022-04-26 | 玛特森技术公司 | Temperature control using a temperature control element coupled to a faraday shield |
| JP2020017569A (en) * | 2018-07-23 | 2020-01-30 | 東京エレクトロン株式会社 | Etching method and etching apparatus |
| US10872747B2 (en) * | 2018-08-08 | 2020-12-22 | Lam Research Corporation | Controlling showerhead heating via resistive thermal measurements |
| CN211629034U (en) * | 2020-04-29 | 2020-10-02 | 北京鲁汶半导体科技有限公司 | Plasma etching machine |
| CN211957596U (en) * | 2020-05-28 | 2020-11-17 | 北京鲁汶半导体科技有限公司 | Plasma etching system and Faraday shielding device capable of being used for heating |
| CN211957597U (en) * | 2020-05-28 | 2020-11-17 | 北京鲁汶半导体科技有限公司 | Plasma etching system and Faraday shielding device capable of being used for heating |
-
2021
- 2021-06-23 CN CN202110697971.6A patent/CN115513025A/en active Pending
- 2021-12-09 KR KR1020237024709A patent/KR20230119721A/en unknown
- 2021-12-09 WO PCT/CN2021/136737 patent/WO2022267371A1/en unknown
- 2021-12-14 TW TW110146816A patent/TWI825527B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230119721A (en) | 2023-08-16 |
| TWI825527B (en) | 2023-12-11 |
| WO2022267371A1 (en) | 2022-12-29 |
| TW202301406A (en) | 2023-01-01 |
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