CN115506029A - Method for regulating and controlling topological ferroelectric domain configuration through nano indentation/scratch - Google Patents
Method for regulating and controlling topological ferroelectric domain configuration through nano indentation/scratch Download PDFInfo
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Abstract
The invention discloses a method for regulating and controlling a topological ferroelectric domain configuration through nano indentation/scratch, which comprises the following steps: fixing the original flaky single crystal on a substrate through an adhesive; pressing the first surface of the original flaky single crystal into the first surface of the original flaky single crystal under a first load by adopting a nanometer pressure head to form an indentation; transferring to a heating table, heating to 80-120 ℃, and separating the original flaky single crystal from the substrate; transferring the original flaky single crystal into a crucible, embedding the flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace; raising the temperature from room temperature to 1450-1500 ℃, preserving the temperature for 5-10 min, and carrying out heat treatment on the original flaky single crystal; and (4) recovering to room temperature, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domains of the target flaky single crystal are distributed in a six-fold symmetrical vortex type near the indentation. Stress/strain is introduced into the hexagonal manganese oxide flaky single crystal through nano indentation/scratch at room temperature, and the configuration of a topological protective ferroelectric domain formed by the single crystal spontaneously can be accurately controlled locally.
Description
Technical Field
The invention relates to the technical field of ferroelectric materials, in particular to a method for regulating and controlling topological ferroelectric domain configuration through nano indentation/scratch.
Background
The ferroelectric material has the characteristics ofSpontaneous polarization and non-volatility of external field inversion have important application value in the fields of multi-state memories, piezoelectric drivers, ultrasonic transducers and the like. Ferroelectric materials have a rich microstructure, in which regions with the same polarization direction are called domains and regions dividing different domains are called domain walls. The nano-scale domain wall in the ferroelectric material can show different physical properties from those of a parent material, is not restricted by lattice symmetry, and can be created, moved and erased through an external electric field in the distribution of the nano-scale domain wall in the space, so that the position, the density and the direction of the domain wall can be adjusted in real time, and the micro-nano electronic device based on the domain wall becomes possible. In recent years, researchers have found that hexagonal manganese oxide h-RMnO 3 The (R = Y, ho-Lu) system is a ferroelectric material with abundant configuration of ferroelectric domains and conductive domain walls. In a high-temperature paraelectric phase (P6) 3 /mmc) Cooling over Curie temperature (T) C =950 ℃ -1400 ℃ C. To be converted into a ferroelectric phase (P6) 3 cm), because of an intrinsic topological protection mechanism, the vortex domain structure has abundant topological protection, and further domain walls in three different conduction states can coexist.
The ferroelectric material has an electric hysteresis loop which is essentially the inversion of an electric domain and the movement of a domain wall under the action of an external electric field, thereby providing a way of regulating and controlling the domain structure under the micro-nano scale. Currently, electric field regulation, annealing cooling rate regulation and high temperature strain regulation are the most commonly used. The electric field regulation and control means can only regulate and control a domain wall due to the topological protection effect, and can not regulate and control the vortex center movement of the hexagonal manganese oxide. The annealing cooling rate regulating and controlling means is that the vortex center density of the hexagonal manganese oxide can be integrally and macroscopically regulated and controlled by changing different annealing cooling rates in the annealing process, so that the integral vortex center regulating and controlling effect is achieved, but the vortex centers of the hexagonal manganese oxide formed by the regulation and control are still in three-dimensional random distribution, cannot be artificially controlled, cannot be locally and accurately regulated and controlled in position, and brings great difficulty to the regulation and control convenience of future practical application. The high-temperature strain regulation and control means can realize local regulation and control of vortex center movement, but the method needs to be applied at high temperature, has higher experimental difficulty and cannot realize accurate regulation and control. The prior art CN110473873A provides a preparation method of an ordered ferroelectric topological domain structure array, the ordered ferroelectric topological domain structure array prepared based on a PZT nano-dot array reaches a nano level, ferroelectric topological domain structures are mutually independent and can be further regulated and controlled by a conventional electric field, but a single topological domain (a ferroelectric vortex domain or a central domain) induced by the electric field on a film or a block has the problems of low density and difficulty in accurately and locally controlling ferroelectric domains.
Therefore, it is desirable to provide a method for regulating and controlling the configuration of a topological ferroelectric domain by nanoindentation/scratch, which can precisely and locally control the configuration of a topological protective ferroelectric domain formed by single crystal spontaneous formation.
Disclosure of Invention
In view of the above, the present invention provides a method for regulating and controlling a topological ferroelectric domain configuration by nanoindentation/scratch, wherein a target raw material comprises an original flaky single crystal and a substrate, and the original flaky single crystal is fixed on the substrate by an adhesive; pressing a first surface of the original flaky single crystal into the nano pressure head under a first load to form an indentation, wherein the first surface is the surface of one side of the original flaky single crystal, which is far away from the substrate; transferring the target raw material with the indentation to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ according to the heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate; transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace; heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original sheet-shaped single crystal; and (3) recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domain of the target flaky single crystal is distributed in a six-fold symmetrical vortex form near the indentation.
Preferably, the first load is 50mN to 400mN.
The invention also provides a method for regulating and controlling the configuration of the topological ferroelectric domain through nano indentation/scratch, wherein the target raw material comprises original flaky single crystals and a substrate, and the original flaky single crystals are fixed on the substrate through a binder; pressing a second surface of the original flaky single crystal into the nano pressure head under a second load and moving along the direction parallel to the plane of the second surface to form a first scratch, wherein the second surface is the surface of the original flaky single crystal on the side away from the substrate; transferring the target raw material with the first scratch to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate; transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace; heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original sheet-shaped single crystal; and (3) recovering the temperature in the box furnace from 1450-1500 ℃ to room temperature according to the cooling rate of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domains of the target flaky single crystal are distributed in a high-density stripe pattern on two sides of the first scratch.
Preferably, the nanometer pressure head is used for pressing the second surface of the original flaky single crystal under a second load and moving the second surface in a direction parallel to and reverse to the first scratch to form a second scratch; transferring the target raw material with the first scratch and the second scratch to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate; transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace; heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original sheet-shaped single crystal; and (3) recovering the temperature in the box furnace from 1450-1500 ℃ to room temperature according to the cooling rate of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domain of the target flaky single crystal is distributed in a high-density parallel stripe type between the first scratch and the second scratch.
Preferably, the second load is 50mN to 100mN.
Preferably, the first and second scratches have a length of 100 to 1000 μm and a distance of 30 to 60 μm.
Preferably, the original flaky single crystal and the target flaky single crystal are both hexagonal manganese oxide flaky single crystals, and the chemical formula of the hexagonal manganese oxide flaky single crystal is RMnO 3 Wherein R is any one element of Er, Y, lu, ho, tm or Yb; the polycrystalline powder is RMnO 3 The polycrystalline powder, wherein R is any one element of Er, Y, lu, ho, tm or Yb.
Preferably, the indenter is any one of a Bohr indenter, a spherical indenter or a conical indenter.
Preferably, the substrate is an iron sheet, a silicon wafer, a glass slide, a zirconium oxide ceramic sheet or a silicon nitride ceramic sheet; the binder is glue or thermosetting resin.
Preferably, the ferroelectric domains of the target flaky single crystal are distributed in a six-fold symmetric vortex type or a high-density stripe type.
Compared with the prior art, the method for regulating and controlling the topological ferroelectric domain configuration through the nano indentation/scratch at least realizes the following beneficial effects:
according to the method for regulating and controlling the topological ferroelectric domain configuration through the nano indentation/scratch, stress/strain is introduced into the hexagonal manganese oxide flaky single crystal through the nano indentation/scratch at room temperature, and compared with the existing method for applying strain by placing an aluminum rod at a high temperature, the method is safer and more convenient to operate. Meanwhile, the nano indentation/scratch can artificially control parameters such as the load size of the indentation/scratch, the moving direction of the pressure head, the moving distance of the pressure head and the like, can regulate and control the ferroelectric domain of the hexagonal manganese oxide sheet monocrystal to be in six-fold symmetrical vortex type distribution or high-density stripe type distribution, paves the way for realizing the application of domain wall-based micro-nano electronic devices, can also be applied to other perovskite ferroelectric material systems, and provides a brand-new means and degree of freedom for the regulation and control of the ferroelectric domain and the domain wall.
Of course, it is not necessary for any product in which the present invention is practiced to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a flowchart of a method for regulating and controlling a topological ferroelectric domain configuration through nanoindentation according to the present invention;
FIG. 2 shows LuMnO provided by the present invention 3 Microscopic pictures of six-fold symmetric vortex-type distribution of ferroelectric domains of single crystals near the indentations;
FIG. 3 shows LuMnO provided by the present invention 3 The single crystal is in a magnus type force distribution diagram generated by the induction of hexagonal lattices under the random distribution of vortex domains and concentrated force;
FIG. 4 shows LuMnO provided by the present invention 3 The single crystal is formed and evolves in six-fold symmetrical vortex domain distribution;
FIG. 5 shows LuMnO provided by the present invention 3 The single crystal presents a distribution diagram of six-fold symmetrical vortex domains in different load and pressing directions;
FIG. 6 is LuMnO provided by the present invention 3 Density graphs of six-fold symmetric vortex domains of the single crystal under different loads;
FIG. 7 is LuMnO provided by the present invention 3 Six-fold symmetric vortex domains generated by single crystals under the induction of different pressure heads are distributed;
FIG. 8 is a flow chart of a method for regulating and controlling the configuration of a topological ferroelectric domain by nano scratches according to the present invention;
FIG. 9 shows LuMnO provided by the present invention 3 Microscopic picture of high density stripe distribution of ferroelectric domain of single crystal near scratch;
fig. 10 is a flowchart of another method for regulating and controlling the configuration of a topological ferroelectric domain through nano scratches according to the present invention;
FIG. 11 shows LuMnO provided by the present invention 3 Microscopic picture of high density parallel stripe distribution of ferroelectric domain of single crystal near scratch;
FIG. 12 shows LuMnO provided by the present invention 3 (Single Crystal)The nano scratch regulation and control generate a large-area high-density stripe domain distribution graph;
FIG. 13 is LuMnO provided by the present invention 3 The nano scratch regulation of the single crystal generates a large-area high-density parallel stripe domain distribution diagram.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as exemplary only and not as limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
The most common means for regulating domain structure at present are electric field regulation, annealing cooling rate regulation and high temperature strain regulation. Wherein, the electric field regulation and control means can not regulate and control the vortex center movement of the hexagonal manganese oxide; the hexagonal manganese oxide vortex centers formed by the annealing cooling rate regulation and control means are still distributed randomly in three dimensions, cannot be controlled manually and cannot be locally and accurately regulated and controlled in position; the high-temperature strain regulation and control means needs to be applied at high temperature, the experiment difficulty is higher, and the precise regulation and control cannot be realized.
Based on the research, the application provides a method for regulating and controlling the configuration of a topological ferroelectric domain through nano indentation/scratch, stress/strain is introduced into the hexagonal manganese oxide flaky single crystal through nano indentation/scratch at room temperature, parameters such as the load size of the nano indentation/scratch, the moving direction of a pressure head, the moving distance of the pressure head and the like can be manually controlled through the nano indentation/scratch, the ferroelectric domain of the hexagonal manganese oxide flaky single crystal can be regulated and controlled to be in six-fold symmetrical vortex type distribution or high-density stripe type distribution, and the manufacturing process is simple and safe. The method for regulating and controlling the configuration of the topological ferroelectric domain through nanoindentation/scratch, which has the technical effects described above, is described in detail as follows.
Example 1
Referring to fig. 1, fig. 1 is a flowchart of a method for regulating a configuration of a topological ferroelectric domain through nanoindentation according to the present invention, which includes the following steps:
s101, target raw materials comprise original flaky single crystals and a substrate, wherein the original flaky single crystals are fixed on the substrate through a binder;
s102, pressing a first surface of the original flaky single crystal into the nano pressure head under a first load to form an indentation, wherein the first surface is the surface of one side of the original flaky single crystal, which is far away from the substrate;
s103, transferring the target raw material with the indentation to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate;
s104, transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
s105, heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ according to the heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original flaky single crystal;
s106, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s107, obtaining target flaky single crystals from the crucible, wherein ferroelectric domains of the target flaky single crystals are distributed in a six-fold symmetrical vortex mode near the indentations.
Specifically, the method for regulating and controlling the configuration of the topological ferroelectric domain through nanoindentation provided in this embodiment includes:
s101, selecting a target raw material according to elements contained in hexagonal manganese oxide flaky single crystals, wherein the target raw material comprises an original flaky single crystal and a substrate, and the original flaky single crystal is fixed on the substrate through a binder;
alternatively, the adhesive may be 502 glue, AB glue, or thermosetting resin, but is not limited thereto, and whatever material is used, it is only necessary that the original sheet-like single crystal can be fixed on the substrate.
Optionally, the substrate is an iron sheet, a silicon wafer, a glass slide, a zirconia ceramic sheet or a silicon nitride ceramic sheet, but the substrate is not limited thereto, and no matter what material is adopted, the substrate only needs to be flat in surface.
S102, pressing the target raw material obtained in the step S101 into a first surface of the original flaky single crystal to form an indentation under a first load by using a nano indenter on a nano indenter, wherein the first surface is the surface of the original flaky single crystal on one side away from the substrate, and then lifting the indenter and separating the indenter from the target raw material;
optionally, the indenter is any one of a bosch indenter, a spherical indenter or a conical indenter, and the shape and size of the indenter are not specifically limited herein.
Alternatively, the first load is 50mN to 400mN, for example, 50mN, 100mN, 200mN, 300mN, 400mN, or the like.
Alternatively, the nanoindenter can be replaced with other instruments, such as an atomic force microscope, a diamond glass knife, and the like.
S103, transferring the target raw material with the indentation obtained in the step S102 to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ according to a heating rate of 60-120 ℃/h, for example, 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃ and the like, removing the binder, separating the original sheet-shaped single crystal from the substrate, and taking down the original sheet-shaped single crystal;
s104, transferring the original flaky single crystal obtained in the step S103 into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
optionally, the crucible is an alumina crucible.
S105, heating the temperature in the box type furnace in the step S104 from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, preserving the temperature at 1450-1500 ℃ for 5-10 min, such as 1450 ℃, 1465 ℃, 1475 ℃, 1485 ℃, 1500 ℃ and the like, and carrying out heat treatment on the original sheet-shaped single crystal;
s106, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s107, obtaining the target flaky single crystal with the ferroelectric domain in six-fold symmetrical vortex-type distribution near the indentation from the crucible.
Referring to fig. 3, fig. 3 is a LuMnO provided by the present invention 3 The single crystal is in a magnus type force distribution diagram generated by vortex domains which are randomly distributed and hexagonal lattice induction under concentrated force. Wherein, please refer to FIG. 3a, after high temperature annealing, luMnO 3 The hexagonal manganese oxide flaky single crystal can generate ferroelectric vortex domains which are randomly distributed through a high-temperature annealing process. Vortex domain formation of Z due to lattice distortion and trimerization 2 ×Z 3 Type vortex-anti-vortex pair. The topological protection mechanism of the six-domain vortex center is very stable and cannot be regulated by a common external electric field. Please refer to fig. 3b, in which nano-indentation obtained by finite element simulation introduces a concentrated stress distribution on the surface of the single crystal, and the introduced stress and the interaction energy of the vortex center and the anti-vortex center on the surface of the single crystal are shown in the following formula (1):
wherein (x) V ,y V )，(x A ,y A ) Cartesian coordinates of the vortex center and the anti-vortex center, respectively; epsilon ij Is the strain tensor; λ is the energy couplingA coefficient; h is the thickness of the hexagonal manganese oxide plate-shaped single crystal. The magnus-type forces exerted on the vortex and anti-vortex centres can be obtained by differentiating the cartesian coordinates of the vortex and anti-vortex centres as shown in equation (2) below:
wherein (x) V ,y V )，(x A ,y A ) Cartesian coordinates of the vortex center and the anti-vortex center, respectively; epsilon ij Is the strain tensor; λ is the energy coupling coefficient; h is the thickness of the hexagonal manganese oxide plate-shaped single crystal.
Magnus-type forces on the vortex and anti-vortex centers pull the vortex and anti-vortex centers apart from each other. Referring to the magnus-type force distribution around the nano-indentations shown in fig. 3c to 3d, it can be seen visually that the magnus-type force distribution exhibits an alternating triple symmetry, which divides the area around the indentations into six areas. As indicated by the black and grey dashed arrows in fig. 3d, the six zones are separated by six main directions of radial magnus-type forces, the magnus-type forces in the zones being mainly distributed tangentially, and under the action of the magnus-type forces, a movement process of six-fold symmetrically distributed vortex centers and anti-vortex centers is formed. Referring to fig. 4, fig. 4 is a LuMnO provided by the present invention 3 The single crystal is formed and evolves in a six-fold symmetric vortex domain distribution, as shown in fig. 4a, the vortex center and the anti-vortex center move schematically under the magnus type force, under the tangential magnus type force, the vortex center and the anti-vortex center are alternately gathered and arranged near the magnus type force in six main radial directions, wherein 1, 3 and 5 are anti-vortex centers, and 2, 4 and 6 are vortex centers. While the major component of the magnus-type force in the major direction is radial, resulting in a local vortex center or anti-vortex center that is further away from or closer to the indentation in six major directions. Finally, under the simultaneous action of tangential and radial magnus type forces, the vortex center and the anti-vortex center move to opposite directions to form six-fold symmetric domain distribution. At different evolution timesAnd (3) performing phase field simulation, namely obtaining six-fold symmetric domain distribution of the pressure head at different evolution times through the phase field simulation as shown in fig. 4b to 4e, and displaying the evolution process of the vortex center, wherein the motion directions of the vortex center and the anti-vortex center are opposite. Finite element simulations also confirmed that the hexagonal lattice induced magnus-type force distribution under the concentrated forces generated by nanoindentation is triply symmetric, as shown in fig. 4 f.
Optionally, the chemical formula of the hexagonal manganese oxide single crystal sheet in step S101 of this embodiment is RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element, and it can also be understood that the original flaky single crystal and the target flaky single crystal obtained through the above steps S101 to S107 are hexagonal manganese oxide flaky single crystals, and have a chemical formula of RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element; thus, the present embodiment has a wide range of applications, and various types of hexagonal manganese oxide plate-shaped single crystals can be used.
Optionally, the polycrystalline powder is RMnO 3 The polycrystalline powder may be any one of an Er element, a Y element, a Lu element, a Ho element, a Tm element, and a Yb element.
In order to illustrate that the ferroelectric domains of the target flake single crystal prepared in example 1 are in six-fold symmetrical vortex distribution near the indentation, relevant observation and test are carried out on the ferroelectric domain distribution effect of the target flake single crystal after heat treatment is finished, and the test results are shown in FIG. 2, and FIG. 2 is LuMnO provided by the invention 3 The test method of the microscopic image that the ferroelectric domain of the single crystal is distributed in a six-fold symmetrical vortex mode near the indentation comprises the following steps:
s108, obtaining the target flaky single crystal from the crucible, and carrying out relevant observation and test on the ferroelectric domain distribution effect of the target flaky single crystal after heat treatment is finished;
s1081, soaking a target flaky single crystal in phosphoric acid, heating to 210 ℃, preserving heat for 1 hour, cooling to room temperature, taking out the target flaky single crystal, cleaning with alcohol, wiping, and observing under an optical microscope to obtain six-fold symmetrical vortex-type distribution of ferroelectric domains of the target flaky single crystal near an indentation;
s1082, scanning the target flaky single crystal near the indentation by using a Piezoelectric Force Microscope (PFM), and observing the target flaky single crystal by using the PFM to obtain that the ferroelectric domains of the target flaky single crystal are distributed in a six-fold symmetric vortex manner near the indentation.
To illustrate the beneficial technical effects of the target flake single crystal prepared in example 1, in which ferroelectric domains are distributed in a six-fold symmetric vortex-type manner near the indentation, nano indentation experiments are performed on the target flake single crystal after heat treatment under different loading forces, and the test results are shown in fig. 5, where fig. 5 is a view of the LuMnO provided by the present invention 3 The single crystal shows the distribution of six-fold symmetric vortex domains in different loading and pressing directions, wherein please refer to fig. 5a to 5b, fig. 5a is the optical microscope photograph of the vortex domains, fig. 5b is the orientation of six-fold symmetric domains and the LuMnO 3 The relationship of the shape of the single crystal proves LuMnO 3 The single crystal presents six-fold symmetric vortex domains in different load and pressing directions, and six-fold symmetric domain distribution under the load forces of 50mN, 100mN and 400mN is shown in combination with FIGS. 5c to 5e, namely that nano indentation experiments under different load forces prove good reproducibility, and in combination with FIG. 6, FIG. 6 is LuMnO provided by the invention 3 Density maps of hexagonally symmetric vortex domains of a single crystal under different loads, wherein AFM scan images of the hexagonally symmetric domains after chemical etching under load forces of 50mN, 100mN and 400mN, respectively, are shown in fig. 6a to 6c, and height variation maps of the same-length line segments in fig. 6a to 6c, respectively, are shown in fig. 6d to 6f, respectively, also demonstrate that the periodicity of the domain distribution decreases with increasing mechanical load. It is worth noting that even if the indenter is pressed into the single crystal surface in random arbitrary directions, the directions that produce the six-fold symmetry are consistent, highlighting the nano-indentation induced strain distribution coupled with the hexagonal lattice. And performing nanoindentation experiments on the target flaky single crystal after the heat treatment under different indenters, wherein the test results are shown in FIG. 7, and FIG. 7 shows LuMnO provided by the present invention 3 The six-fold symmetric vortex domain distribution of the single crystal induced by different pressure heads, wherein the six-fold symmetric domain distribution generated by the Bos pressure head induction is shown in fig. 7a, the six-fold symmetric domain distribution generated by the Bos pressure head induction is shown in fig. 7b, and the six-fold symmetric domain distribution generated by the phase field simulation Bos pressure head induction is shown in fig. 7c, and the six-fold symmetric vortex domain distribution generated by the spherical pressure head induction is shown in fig. 7cThe generated six-fold symmetric domain distribution, and fig. 7d shows the six-fold symmetric domain distribution induced by the spherical indenter of the phase field simulation, and the shape symmetry of the indenter is eliminated from being related to the six-fold symmetric domain distribution by comparing the same nano-indentation experiment of the spherical indenter and the Boehringer indenter and the phase field simulation results of different indenters. Therefore, the mechanism of introducing stress through nano indentation and the method of introducing stress/strain into the hexagonal manganese oxide flaky single crystal through nano indentation at room temperature are safer and more convenient to operate compared with the existing method of placing an aluminum rod at high temperature to apply strain. Meanwhile, the nano indentation can manually control parameters such as the load size of the indentation, the moving direction of the pressure head, the moving distance of the pressure head and the like, can regulate and control the ferroelectric domains of the hexagonal manganese oxide flaky single crystal to be in six-fold symmetrical vortex distribution, paves the way for realizing the application of domain wall-based micro-nano electronic devices, can also be applied to other perovskite ferroelectric material systems, and provides a brand new means and degree of freedom for the regulation and control of the ferroelectric domains and the domain walls.
Example 2
Referring to fig. 8, fig. 8 is a flowchart illustrating a method for regulating a configuration of a topological ferroelectric domain by nano-scratches according to the present invention, which includes the following steps:
s201, the target raw material comprises an original flaky single crystal and a substrate, wherein the original flaky single crystal is fixed on the substrate through a binder;
s202, pressing a second surface of the original flaky single crystal into the nanometer pressure head under a second load, and moving the nanometer pressure head along a direction parallel to a plane where the second surface is located to form a first scratch, wherein the second surface is the surface of one side, away from the substrate, of the original flaky single crystal;
s203, transferring the target raw material with the first scratch to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate;
s204, transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
s205, heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at the heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original flaky single crystal;
s206, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s207, obtaining a target flaky single crystal from the crucible, wherein ferroelectric domains of the target flaky single crystal are distributed in a high-density stripe shape on two sides of the first scratch.
Specifically, the method for regulating and controlling the configuration of the topological ferroelectric domain through the nano scratch provided in this embodiment includes:
s201, selecting a target raw material according to elements contained in the hexagonal manganese oxide flaky single crystal, wherein the target raw material comprises an original flaky single crystal and a substrate, and the original flaky single crystal is fixed on the substrate through a binder;
alternatively, the adhesive may be 502 glue, AB glue, or thermosetting resin, but is not limited thereto, and whatever material is used, it is only necessary that the original sheet-like single crystal can be fixed on the substrate.
Optionally, the substrate is an iron sheet, a silicon wafer, a glass slide, a zirconia ceramic sheet or a silicon nitride ceramic sheet, but the substrate is not limited thereto, and no matter what material is adopted, the substrate only needs to be flat in surface.
S202, pressing the target raw material obtained in the step S201 into a second surface of the original flaky single crystal by adopting a nano pressure head on a nano indenter under a second load and linearly moving along the direction parallel to the plane of the second surface to form a first scratch, wherein the second surface is the surface of the original flaky single crystal on one side away from the substrate, and then lifting the pressure head and separating the pressure head from the target raw material;
optionally, the indenter is any one of a bosch indenter, a spherical indenter or a conical indenter, and the shape and size of the indenter are not specifically limited herein.
Alternatively, the second load is 50mN to 100mN, for example, 50mN, 60mN, 70mN, 80mN, 100mN, or the like.
Alternatively, the nanoindenter can be replaced with other instruments, such as an atomic force microscope, a diamond glass knife, and the like.
Optionally, the first scribe length is 100 μm to 1000 μm, e.g., 100 μm, 300 μm, 500 μm, 800 μm, 1000 μm.
S203, transferring the target raw material with the first scratch obtained in the step S202 to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating rate of 60-120 ℃/h, removing the binder, such as 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃ and the like, separating the original flaky single crystal from the substrate, and taking down the original flaky single crystal;
s204, transferring the original flaky single crystal obtained in the step S203 into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
optionally, the crucible is an alumina crucible.
S205, raising the temperature in the box type furnace in the step S204 from room temperature to 1450-1500 ℃ according to a heating rate of 120-180 ℃/h, preserving the temperature at 1450-1500 ℃ for 5-10 min, such as 1450 ℃, 1465 ℃, 1475 ℃, 1485 ℃, 1500 ℃ and the like, and carrying out heat treatment on the original sheet-shaped single crystal;
s206, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s207, obtaining the target flaky single crystal with ferroelectric domains distributed in a high-density stripe shape on two sides of the scratch from the crucible.
Optionally, in this embodiment, the hexagonal manganese oxide single crystal flakes in step S201 have a chemical formula of RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element, and the original flaky single crystal and the target flaky single crystal obtained through the steps S201 to S207 can be understood to be hexagonal manganese oxide flaky single crystals with a chemical formula of RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element; thus, the present embodiment has a wide range of applications, and various types of hexagonal manganese oxide single crystal wafers can be used.
Optionally, the polycrystalline powder is RMnO 3 The polycrystalline powder, wherein R may be any one of an Er element, a Y element, a Lu element, a Ho element, a Tm element, or a Yb element.
In order to illustrate the high-density stripe distribution effect of the ferroelectric domains on the two sides of the first scratch of the target flaky single crystal prepared in example 2, the ferroelectric domain distribution effect of the target flaky single crystal after heat treatment is observed and tested, and the test results are shown in fig. 9, and fig. 9 is the LuMnO provided by the present invention 3 The microscopic picture of high density stripe type distribution of ferroelectric domain of single crystal near scratch is tested by the following method:
s208, obtaining the target flaky single crystal from the crucible, and carrying out relevant observation and test on the ferroelectric domain distribution effect of the target flaky single crystal after heat treatment is finished;
s2081, soaking the target flaky single crystal in phosphoric acid, heating to 210 ℃, preserving heat for 1 hour, cooling to room temperature, taking out the target flaky single crystal, cleaning with alcohol, wiping to dry, and observing under an optical microscope to obtain the ferroelectric domain of the target flaky single crystal which is distributed in a high-density stripe pattern on two sides of a first scratch;
s2082, scanning the target flaky single crystal near the indentation by using a Piezoelectric Force Microscope (PFM), and observing by using the PFM to obtain that the ferroelectric domains of the target flaky single crystal are distributed in a high-density stripe shape at two sides of the first indentation.
To create a relatively large strain distribution range, the nano-scratches are achieved by moving the indenter in a certain direction under a constant mechanical load. Referring to fig. 12, fig. 12 is a LuMnO provided by the present invention 3 Referring to fig. 12a to 12d, fig. 12a is a starting region where the nano scratch is regulated to generate a high-density stripe domain, fig. 12b is a schematic diagram of the nano scratch, fig. 12c is an end region where the nano scratch is regulated to generate a high-density stripe domain, fig. 12d is a region where the nano scratch is regulated to generate a high-density stripe domain, and the nano scratch is subjected to the same annealing process to obtain a high-density stripe domain. The movement of the vortex and anti-vortex centres can be analysed graphically, as shown in the figure12e, the movement process of the vortex center and the anti-vortex center is regulated and controlled by the nano scratches, and the distribution of the sextuple symmetric domains at the starting points of the nano scratches is consistent with that of the sextuple symmetric domains of the nano indentations. With the movement of the indenter, the strain induced in the three main directions (6, 1, 2) is gradually reconstructed by the strain induced in (5, 4, 3). As a result, a single nano-scratch as shown in fig. 12f modulates the distribution of the vortex center and the anti-vortex center, and a high density of stripes forming an angle of 120 ° with the nano-scratch direction are formed due to the tangential magnus type force driving the vortex center and the anti-vortex center to move in opposite directions. At the end point, because of the absence of the hysteretic magnus-type forces, another six-fold symmetric domain distribution is left with the vortex centers concentrated near the first scratch and the anti-vortex centers pushed away. Therefore, the mechanism of introducing stress through the nano scratches and the stress/strain introduced into the hexagonal manganese oxide flaky single crystal through the nano scratches at room temperature are safer and more convenient to operate compared with the existing method of applying strain by placing an aluminum bar at high temperature. Meanwhile, the nano scratches can artificially control parameters such as the load size of the scratches, the moving direction of the pressure head, the moving distance of the pressure head and the like, ferroelectric domains of the hexagonal manganese oxide flaky single crystal can be distributed in a high-density stripe shape on two sides of the first scratch, a road is paved for realizing the application of domain wall-based micro-nano electronic devices, and meanwhile, the nano scratches can also be applied to other perovskite ferroelectric material systems, so that a brand-new means and degree of freedom are provided for the regulation and control of the ferroelectric domains and the domain walls.
Example 3
Referring to fig. 10, fig. 10 is a flowchart illustrating another method for regulating a configuration of a topological ferroelectric domain by nano-scratches according to the present invention, which includes the following steps:
s301, the target raw material comprises an original flaky single crystal and a substrate, and the original flaky single crystal is fixed on the substrate through a binder;
s302, pressing the second surface of the original flaky single crystal into a nanometer pressure head under a second load, moving the nanometer pressure head along the direction parallel to the plane of the second surface to form a first scratch, and pressing the second surface of the original flaky single crystal into the nanometer pressure head under the second load, moving the nanometer pressure head along the direction parallel to and reverse to the first scratch to form a second scratch; the second surface is the surface of the original flaky single crystal far away from one side of the substrate;
s303, transferring the target raw material with the first scratch and the second scratch to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating rate of 60-120 ℃/h, and separating the original flaky single crystal from the substrate;
s304, transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
s305, heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at the heating rate of 120-180 ℃/h, and preserving the heat at 1450-1500 ℃ for 5-10 min to carry out heat treatment on the original flaky single crystal;
s306, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s307, obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domains of the target flaky single crystal are distributed in a high-density parallel stripe type between the first scratch and the second scratch.
Specifically, the method for regulating and controlling the configuration of the topological ferroelectric domain through the nano scratch provided in this embodiment includes:
s301, selecting a target raw material according to elements contained in the hexagonal manganese oxide flaky single crystal, wherein the target raw material comprises an original flaky single crystal and a substrate, and the original flaky single crystal is fixed on the substrate through a binder;
alternatively, the adhesive may be 502 glue, AB glue, or thermosetting resin, but is not limited thereto, and whatever material is used, it is only necessary that the original sheet-like single crystal can be fixed on the substrate.
Optionally, the substrate is an iron sheet, a silicon wafer, a glass slide, a zirconia ceramic sheet or a silicon nitride ceramic sheet, but the substrate is not limited thereto, and no matter what material is adopted, the substrate only needs to have a flat surface.
S302, pressing the target raw material obtained in the step S301 into the second surface of the original flaky single crystal under a second load by adopting a nano indenter on the nano indenter, linearly moving along the direction parallel to the plane where the second surface is located to form a first scratch, pressing into the second surface of the original flaky single crystal under the same load by adopting the same nano indenter, moving along the direction parallel to and reverse to the first scratch to form a second scratch, wherein the second surface is the surface of the original flaky single crystal on the side far away from the substrate, and then lifting the indenter and separating the indenter from the target raw material;
optionally, the indenter is any one of a bosch indenter, a spherical indenter or a conical indenter, and the shape and size of the indenter are not specifically limited herein.
Alternatively, the second load is 50mN to 100mN, for example, 50mN, 60mN, 70mN, 80mN, 100mN, or the like.
Alternatively, the nanoindenter can be replaced with other instruments, such as an atomic force microscope, a diamond glass knife, and the like.
Optionally, the first scratch length and the second scratch length are both 100 μm to 1000 μm, such as 100 μm, 300 μm, 500 μm, 800 μm, 1000 μm; the pitch between the first and second scratches is 30 to 60 μm, and may be, for example, 30 to 40, 45, 50 or 60 μm.
S303, transferring the target raw material with the first scratch and the second scratch obtained in the step S302 to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating rate of 60-120 ℃/h, removing the binder, such as 80 ℃, 90 ℃, 100 ℃, 110 ℃, 120 ℃ and the like, separating the original flaky single crystal from the substrate, and taking down the original flaky single crystal;
s304, transferring the original flaky single crystal obtained in the step S303 into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
optionally, the crucible is an alumina crucible.
S305, heating the temperature in the box type furnace in the step S304 from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, preserving the temperature at 1450-1500 ℃ for 5-10 min, such as 1450 ℃, 1465 ℃, 1475 ℃, 1485 ℃, 1500 ℃ and the like, and carrying out heat treatment on the original sheet-shaped single crystal;
s306, recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling speed of 150-200 ℃/h;
s307, obtaining the target flaky single crystal with ferroelectric domains distributed in a high-density parallel stripe shape between the first scratch and the second scratch from the crucible.
Optionally, in this embodiment, the chemical formula of the hexagonal manganese oxide single crystal sheet in step S301 is RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element, and the original flaky single crystal and the target flaky single crystal obtained by the steps S301 to S307 can be hexagonal manganese oxide flaky single crystals with a chemical formula of RMnO 3 R can be any one of Er element, Y element, lu element, ho element, tm element or Yb element; thus, the present embodiment has a wide range of applications, and various types of hexagonal manganese oxide single crystal wafers can be used.
Optionally, the polycrystalline powder is RMnO 3 The polycrystalline powder may be any one of an Er element, a Y element, a Lu element, a Ho element, a Tm element, and a Yb element.
In order to demonstrate the effect of high-density parallel stripe type distribution of ferroelectric domains between the first scratches and the second scratches on the ferroelectric domains of the target single crystal flakes prepared in example 3, the ferroelectric domain distribution of the target single crystal flakes after heat treatment is observed and tested, and the test results are shown in fig. 11, fig. 11 is a diagram of LuMnO provided by the present invention 3 The test method of the microscopic image that the ferroelectric domain of the single crystal is distributed in a high-density parallel stripe shape near the scratch comprises the following steps:
s308, obtaining the target flaky single crystal from the crucible, and carrying out relevant observation and test on the ferroelectric domain distribution effect of the target flaky single crystal after heat treatment is finished;
s3081, soaking a target flaky single crystal in phosphoric acid, heating to 210 ℃, preserving heat for 1 hour, cooling to room temperature, taking out the target flaky single crystal, cleaning with alcohol, wiping to dry, and observing under an optical microscope to obtain the ferroelectric domain of the target flaky single crystal, wherein the ferroelectric domain is distributed in a high-density parallel stripe shape between a first scratch and a second scratch;
s3082, scanning the vicinity of the indentation by using a Piezoelectric Force Microscope (PFM), and observing by using the PFM to obtain that the ferroelectric domain of the target flaky single crystal is distributed in a high-density parallel stripe shape between the first scratch and the second scratch.
Based on the analyzed mechanism that the nano indentation regulation vortex domains are in six-fold symmetrical distribution, in order to create a relatively large strain distribution range, the pressure head is moved along a certain direction under constant mechanical load to realize nano scratches. The nano scratches regulate the movement process of the vortex center and the antivortex center as shown in fig. 12e, and the movement of the vortex center and the antivortex center can be analyzed in a graphical manner. The six-fold symmetric domain distribution of the nano scratch starting point is consistent with that of the nano indentation. With the movement of the indenter, the strain induced in the three main directions (6, 1, 2) is gradually reconstructed by the strain induced (5, 4, 3). On the basis of a single scratch, under the action of applying a nano scratch again in the anti-parallel direction, through the same annealing process, the nano scratch obtains a high-density parallel stripe domain, the concentration positions of the vortex center and the anti-vortex center are shown in figure 13, and figure 13 shows the LuMnO provided by the invention 3 The nano scratches of the single crystal are regulated to generate a large-area high-density parallel stripe domain distribution diagram, for double parallel reverse scratches, the vortex center and the anti-vortex center are respectively gathered near the first scratch and the second scratch, and the ferroelectric domains are distributed in a high-density parallel stripe type between the first scratch and the second scratch, and the experimental result of fig. 11 also confirms the mechanism. Therefore, the mechanism of introducing stress through the nano scratches and the stress/strain introduced into the hexagonal manganese oxide flaky single crystal through the nano scratches at room temperature are safer and more convenient to operate compared with the existing method of applying strain by placing an aluminum bar at high temperature. Meanwhile, the nano scratches can artificially control parameters such as the load size, the moving direction of the pressure head, the moving distance of the pressure head and the like of the scratches, ferroelectric domains of hexagonal manganese oxide flaky single crystals can be distributed in a high-density parallel stripe shape on two sides of the first scratch, a road is paved for realizing the application of domain wall-based micro-nano electronic devices, and the method can also be applied to other domain wall-based micro-nano electronic devicesThe perovskite ferroelectric material system provides a brand new means and degree of freedom for the regulation and control of ferroelectric domains and domain walls.
According to the embodiment, the method for regulating and controlling the topological ferroelectric domain configuration through the nano indentation/scratch at least achieves the following beneficial effects:
according to the method for regulating and controlling the configuration of the topological ferroelectric domain through the nano indentation/scratch, stress/strain is introduced into the hexagonal manganese oxide flaky single crystal through the nano indentation/scratch at room temperature, and compared with the existing method for applying strain by placing an aluminum rod at high temperature, the method is safer and more convenient to operate. Meanwhile, the nano indentation/scratch can artificially control parameters such as the load size, the moving direction and the moving distance of the pressure head of the indentation/scratch, and can regulate and control the ferroelectric domain of the hexagonal manganese oxide flaky monocrystal to be in six-fold symmetrical vortex type distribution or high-density stripe type distribution, thereby paving a road for realizing the application of domain wall-based micro-nano electronic devices, being also applicable to other perovskite ferroelectric material systems, and providing a brand-new means and degree of freedom for regulating and controlling the ferroelectric domain and the domain wall.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. A method for regulating and controlling the configuration of a topological ferroelectric domain through nano indentation/scratch is characterized in that: the target raw material comprises an original flaky single crystal and a substrate, wherein the original flaky single crystal is fixed on the substrate through a binder;
pressing a first surface of the original flaky single crystal into a nanometer pressure head under a first load to form an indentation, wherein the first surface is the surface of the original flaky single crystal, which is far away from the substrate;
transferring the target raw material with the indentation to a heating table, heating the temperature of the heating table from room temperature to 80-120 ℃ at a heating speed of 60-120 ℃/h, and separating the original flaky single crystal from the substrate;
transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original sheet-shaped single crystal;
and recovering the temperature in the box furnace from 1450-1500 ℃ to room temperature according to the cooling rate of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domains of the target flaky single crystal are distributed in a six-fold symmetrical vortex mode near the indentation.
2. The method for regulating and controlling the configuration of the topological ferroelectric domain through nano indentation/scratch according to claim 1, wherein: the first load is 50mN to 400mN.
3. A method for regulating and controlling topological ferroelectric domain configuration through nano indentation/scratch is characterized by comprising the following steps: the target raw material comprises an original flaky single crystal and a substrate, wherein the original flaky single crystal is fixed on the substrate through a binder;
pressing a nanometer pressure head into the second surface of the original flaky single crystal under a second load and moving along the direction parallel to the plane of the second surface to form a first scratch, wherein the second surface is the surface of the original flaky single crystal at the side far away from the substrate;
transferring the target raw material with the first scratch to a heating table, wherein the temperature of the heating table is increased from room temperature to 80-120 ℃ at a temperature increasing speed of 60-120 ℃/h, and the original flaky single crystal is separated from the substrate;
transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at a heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original sheet-shaped single crystal;
and recovering the temperature in the box furnace from 1450-1500 ℃ to room temperature according to the cooling rate of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domains of the target flaky single crystal are distributed in a high-density stripe type at two sides of the first scratch.
4. The method for regulating and controlling the configuration of the topological ferroelectric domain through nano indentation/scratch according to claim 3, wherein: pressing the second surface of the original flaky single crystal into the second load by adopting a nanometer pressure head, and moving along the direction parallel to and reverse to the first scratch to form a second scratch;
transferring the target raw material with the first scratch and the second scratch to a heating table, wherein the temperature of the heating table is increased from room temperature to 80-120 ℃ at a heating rate of 60-120 ℃/h, and the original flaky single crystal is separated from the substrate;
transferring the original flaky single crystal into a crucible, embedding the original flaky single crystal by using polycrystalline powder, and placing the crucible into a box-type furnace;
heating the temperature in the box type furnace from room temperature to 1450-1500 ℃ at the heating rate of 120-180 ℃/h, and preserving the temperature at 1450-1500 ℃ for 5-10 min, and carrying out heat treatment on the original flaky single crystal;
and recovering the temperature in the box type furnace from 1450-1500 ℃ to room temperature according to the cooling rate of 150-200 ℃/h, and obtaining the target flaky single crystal from the crucible, wherein the ferroelectric domain of the target flaky single crystal is distributed in a high-density parallel stripe type between the first scratch and the second scratch.
5. The method for regulating and controlling the configuration of the topological ferroelectric domain through nanoindentation/scratching according to claim 4, wherein: the second load is 50mN to 100mN.
6. The method for regulating and controlling the configuration of the topological ferroelectric domain through nano indentation/scratch according to claim 4, wherein: the length of the first scratch and the length of the second scratch are 100-1000 mu m, and the distance between the first scratch and the second scratch is 30-60 mu m.
7. A method for regulating and controlling the configuration of a topological ferroelectric domain by nanoindentation/scratching according to claim 1 or 3, characterized in that: the original flaky single crystal and the target flaky single crystal are both hexagonal manganese oxide flaky single crystals, and the chemical formula of the hexagonal manganese oxide flaky single crystal is RMnO 3 Wherein R is any one element of Er, Y, lu, ho, tm or Yb; the polycrystalline powder is RMnO 3 The polycrystalline powder, wherein R is any one element of Er, Y, lu, ho, tm or Yb.
8. The method for regulating and controlling the configuration of topological ferroelectric domains through nano indentation/scratch according to claim 1 or 3, characterized in that: the pressure head is any one of a glass pressure head, a spherical pressure head or a conical pressure head.
9. A method for regulating and controlling the configuration of a topological ferroelectric domain by nanoindentation/scratching according to claim 1 or 3, characterized in that: the substrate is an iron sheet, a silicon wafer, a glass slide, a zirconium oxide ceramic sheet or a silicon nitride ceramic sheet; the binder is glue or thermosetting resin.
10. The target flaky single crystal prepared by the method for regulating and controlling the topological ferroelectric domain configuration through nano indentation/scratch according to claim 1 or 3, wherein: the ferroelectric domain of the target flaky single crystal is distributed in a six-fold symmetrical vortex type or a high-density stripe type.
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