CN115498073A - Preparation method of nitride light-emitting device - Google Patents

Preparation method of nitride light-emitting device Download PDF

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CN115498073A
CN115498073A CN202110674980.3A CN202110674980A CN115498073A CN 115498073 A CN115498073 A CN 115498073A CN 202110674980 A CN202110674980 A CN 202110674980A CN 115498073 A CN115498073 A CN 115498073A
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layer
gan
emitting device
rcled
dbr
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伊晓燕
宋武睿
刘志强
梁萌
张逸韵
王军喜
李晋闽
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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Abstract

The present disclosure provides a method for manufacturing a nitride light emitting device, including: preparing a bottom DBR layer of a bottom layer on a substrate; covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer; sequentially growing a low-temperature GaN nucleating layer and a GaN buffer layer on the two-dimensional material buffer layer; extending an RCLED main body structure on the GaN buffer layer in an epitaxial manner, wherein the RCLED main body structure sequentially comprises from bottom to top on the GaN buffer layer: the LED comprises an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer; a p electrode is arranged on the metal oxide transparent conducting layer on two sides of the top DBR layer, and an n electrode is arranged on the step region; and depositing an insulating layer on the surface of the nitride light-emitting device, and removing part of the insulating layer by photoetching and corrosion to expose the light outlet, the p electrode and the n electrode to finish the preparation of the nitride light-emitting device.

Description

Preparation method of nitride light-emitting device
Technical Field
The disclosure relates to the technical field of semiconductor lighting, in particular to a preparation method of a nitride light-emitting device.
Background
The resonant cavity light emitting diode RCLED is a device which utilizes the resonant cavity effect to enhance the spontaneous emission, not only has stronger axial light intensity and higher extraction efficiency, but also has narrower spectral line width, smaller divergence angle and better emission directivity, and is beneficial to being coupled with a plastic optical fiber. Therefore, the method has wide application value in the fields of displays, sensors, optical communication, local area networks and the like. The GaN-based RCLED is suitable for the application in the fields of high-brightness display, biology, medicine, cosmetology, industrial processing, criminal investigation technology, communication, detection and the like by virtue of stable physical properties, chemical properties and high radiation recombination efficiency. The basic structure is that the active region is embedded into the resonant cavity with the upper and lower reflectors, and the light radiated and compounded in the active region is reflected back and forth in the upper and lower reflectors to generate interference, so that the absorption of the substrate is avoided to a great extent, and the light extraction efficiency is improved.
However, unlike GaAs system materials, gaN-based RCLED epitaxial AlxIn y Ga 1 - x - y The N/GaN DBR has serious problems of thermal mismatch and lattice mismatch, and it is difficult to epitaxially form a DBR having few defects and a desired reflectivity. Therefore, most people prepare the GaN-based RCLED device by the process of laser stripping and bonding to the dielectric DBR, the traditional method has complex process, is difficult to realize and has low yield, so a two-dimensional material is introduced as a buffer layer, and the amorphous dielectric DBR substrate is isolated to a certain extent by utilizing Van der Waals epitaxial energyDue to the influence caused by thermal mismatch and lattice mismatch, the epitaxial layer is hopefully grown according to the inherent lattice of the epitaxial layer, the GaN-based RCLED structure is directly epitaxially grown on the dielectric DBR, the steps of stripping and bonding are omitted, the process flow is simplified, and the production cost and difficulty are greatly reduced.
Disclosure of Invention
Technical problem to be solved
Based on the above problems, the present disclosure provides a method for manufacturing a nitride light emitting device, so as to alleviate the technical problems of complex manufacturing process and the like in the prior art.
(II) technical scheme
The present disclosure provides a method for manufacturing a nitride light emitting device, including:
preparing a bottom DBR layer of a bottom layer on a substrate;
covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer;
sequentially growing a low-temperature GaN nucleating layer and a GaN buffer layer on the two-dimensional material buffer layer;
extending an RCLED main body structure on the GaN buffer layer in an epitaxial manner, wherein the RCLED main body structure sequentially comprises from bottom to top on the GaN buffer layer: the LED comprises an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer;
injecting boron ions into the p-GaN layer to form a high-resistance region; and a metal oxide transparent conducting layer is evaporated on the p-GaN layer;
etching the two sides of the metal oxide transparent conductive layer to the n-GaN layer to form a step area;
preparing a top DBR layer of a top layer on the middle area of the metal oxide transparent conducting layer and photoetching a defined pattern to be used as a light outlet;
a p electrode is arranged on the metal oxide transparent conducting layer on two sides of the top DBR layer, and an n electrode is arranged on the step area;
and depositing an insulating layer on the surface of the nitride light-emitting device, and photoetching and corroding to remove part of the insulating layer and expose the light outlet, the p electrode and the n electrode to finish the preparation of the nitride light-emitting device.
In the embodiment of the present disclosure, the medium DBR of the bottom DBR layer and the medium DBR of the top DBR layer are two thin film media with different refractive indexes and periodically and alternately grown, respectively, and the reflectivity of the medium DBR of the bottom DBR layer is greater than the reflectivity of the medium DBR of the top DBR layer.
In an embodiment of the present disclosure, the material of the two-dimensional material thin film layer is one of graphene, boron nitride, molybdenum disulfide, and tungsten disulfide.
In the embodiment of the present disclosure, the two-dimensional material buffer layer may be prepared by one of a wet transfer method, a dry transfer method and a CVD method.
In the embodiment of the disclosure, the low-temperature GaN nucleating layer is positioned on the surface of the two-dimensional material, and the growth temperature of the low-temperature GaN nucleating layer is 900-1100 ℃.
In the embodiment of the present disclosure, the thickness of the GaN buffer layer is 10 to 200nm.
In an embodiment of the present disclosure, the n-GaN layer is used to provide electrons for injection into the RCLED active region of the epitaxial RCLED body structure;
the multiple quantum well light emitting layer is an AlGaN/GaN or InGaN/GaN quantum well light emitting layer;
the p-GaN layer is used to provide holes for injection into the RCLED active region of the epitaxial RCLED body structure and for ohmic contact.
In the embodiment of the present disclosure, the boron ion implantation is to implant boron ions below the p-electrode, so as to form the high-resistance region, and the high-resistance region is used to block the implantation of current of the high-resistance region.
In the embodiment of the disclosure, the metal oxide transparent conductive layer can realize lateral current spreading in a p-electrode area and enhance light extraction rate.
In the embodiment of the disclosure, the epitaxial growth method of the RCLED of the epitaxial RCLED main body structure is one of MOCVD, MBE, HVPE and CVD.
(III) advantageous effects
According to the technical scheme, the preparation method of the nitride light-emitting device disclosed by the invention has at least one or part of the following beneficial effects:
(1) By introducing a two-dimensional material as a buffer layer, the influence of thermal mismatch and lattice mismatch of an amorphous medium DBR substrate is isolated to a certain extent by utilizing Van der Waals epitaxial energy, so that an epitaxial layer is hopefully grown according to the inherent lattice of the epitaxial layer;
(2) A GaN-based RCLED structure is directly extended on the dielectric DBR; and
(3) The problems of laser stripping and bonding in the traditional RCLED preparation process are solved, the problem of direct epitaxy is further solved, the process flow is simplified, and the production cost and difficulty are greatly reduced.
Drawings
Fig. 1 is a schematic structural view of a nitride light emitting device according to a method for manufacturing a nitride light emitting device according to an embodiment of the present disclosure.
Fig. 2 is a schematic flow chart of a manufacturing method of a nitride light emitting device according to an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
00. Substrate
01. Bottom DBR layer
02. Two-dimensional material buffer layer
03. Low temperature GaN nucleation layer
04 GaN buffer layer
05 n-GaN layer
06. Multiple quantum well light emitting layer
07 p-GaN layer
08. High resistance region
09. Metal oxide transparent conductive layer
10. Top DBR layer
11 n electrode
12 P electrode
13. Insulating layer
Detailed Description
The invention provides a preparation method of a nitride light-emitting device, which is simple and reliable in process, can prepare an RCLED device with lower cost and simple process flow, omits the problems of laser stripping and bonding in the traditional RCLED preparation process, and further solves the problem of direct epitaxy.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, there is provided a method of fabricating a nitride light emitting device, as shown in fig. 1 to 2, the method including:
preparing a bottom DBR layer 01 on a substrate 00;
covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer 01 to form a two-dimensional material buffer layer 02;
sequentially growing a low-temperature GaN nucleating layer 03 and a GaN buffer layer 04 on the two-dimensional material buffer layer 02;
and generating an epitaxial RCLED main body structure on the GaN buffer layer 04, wherein the epitaxial RCLED main body structure sequentially comprises the following components from bottom to top on the GaN buffer layer 04: n-GaN layer 05, multi-quantum well light-emitting layer 06 and p-GaN layer 07;
performing boron ion implantation on the p-GaN layer 07 to form a high resistance region 08; and a metal oxide transparent conductive layer 09 is evaporated on the p-GaN layer 07;
performing ICP etching on two sides of the metal oxide transparent conducting layer 09 until the n-GaN layer 05 is formed, and forming a step area;
a top DBR layer 10 as a light outlet is defined on the middle area of the metal oxide transparent conducting layer 09 by photoetching;
a p electrode 12 is arranged on the metal oxide transparent conductive layer 09 on both sides of the top DBR layer 10, and an n electrode 11 is arranged on the step region;
and depositing an insulating layer 13 on the surface of the nitride light-emitting device, and removing part of the insulating layer 13 by photoetching and corrosion to expose the light outlet, the p electrode 12 and the n electrode 11, thereby completing the preparation.
In the embodiment of the present disclosure, the medium DBR of the bottom DBR layer 01 and the medium DBR of the top DBR layer 10 are two thin film media with different refractive indexes that are periodically and alternately grown, and the reflectivity of the medium DBR of the bottom DBR layer 01 is greater than the reflectivity of the medium DBR of the top DBR layer 10.
In the embodiment of the present disclosure, the material of the two-dimensional material thin film layer 02 is one of two-dimensional materials such as graphene, boron nitride, molybdenum disulfide, and tungsten disulfide.
In the embodiment of the present disclosure, the two-dimensional material buffer layer 02 may be prepared by one of a wet transfer method, a dry transfer method and a CVD method.
In the embodiment of the disclosure, the low-temperature GaN nucleation layer 03 is located on the surface of the two-dimensional material, and the growth temperature thereof is 900-1100 ℃.
In the embodiment of the disclosure, the thickness of the GaN buffer layer 04 is 10 to 200nm.
In the disclosed embodiment, the n-GaN layer 05 is used to provide electrons to be injected into the RCLED active region of the epitaxial RCLED body structure;
the multiple quantum well light emitting layer 06 is an AlGaN/GaN or InGaN/GaN quantum well light emitting layer;
the p-GaN layer 07 is used to provide holes for injection into the RCLED active region of the epitaxial RCLED body structure and for ohmic contact.
In the embodiment of the present disclosure, the boron ion implantation is to implant boron ions below the p-electrode 12, thereby forming the high-resistance region 08, and the high-resistance region 08 is used to block the implantation of current into the high-resistance region 08.
In the embodiment of the present disclosure, the metal oxide transparent conductive layer 09 can realize lateral current spreading in the region of the p electrode 12 and enhance the light extraction rate.
In the embodiment of the disclosure, the epitaxial growth method of the RCLED of the epitaxial RCLED main body structure is one of MOCVD, MBE, HVPE and CVD.
Specifically, in the embodiments of the present disclosure, as shown in fig. 1 to 2, a method for manufacturing a nitride light emitting device includes the steps of:
the method comprises the following steps: preparing a bottom DBR layer on a substrate, wherein the bottom DBR layer is a high-reflectivity medium DBR;
in some embodiments, the substrate is a sapphire substrate, a SiC substrate, a Si substrate, or any other substrate.
In this embodiment, substrate 00: the sapphire substrate is used, but not limited to a sapphire substrate, and any other substrate is also applicable.
In some embodiments, the bottom high reflectivity medium DBR is a periodic alternating growth of two thin films with different refractive indices.
In this embodiment, the bottom high-reflectivity dielectric DBR layer 01: sputtering 6 pairs of Ta with a thickness of 53.51nm/78.5nm by using reactive ion number 2 O 5 /SiO 2 6 pairs of Ta can be sputtered by, but not limited to, reactive ion counts 2 O 5 /SiO 2 。
Step two: covering 1-10 layers of two-dimensional material films on the surface of the medium DBR;
in some embodiments, the two-dimensional material film as the buffer layer may be a two-dimensional atomic crystal material such as graphene, boron nitride, molybdenum disulfide, tungsten disulfide, or the like; wherein the number of layers of the two-dimensional material is a single layer or multiple layers.
In some embodiments, the two-dimensional material thin film can be prepared by wet transfer, dry transfer or CVD to form the two-dimensional material buffer layer.
In this embodiment, the two-dimensional material buffer layer 02: the two-dimensional material buffer layer is a wet transfer single-layer graphene film, and can be but is not limited to the wet transfer single-layer graphene film.
Specifically, PMMA was spin-coated on CVD-grown graphene on Cu foil, and it was baked on a hot plate at 120 ℃ for 15 minutes, after curing, in 21% FeCl 3 Soaking in the solution for 4 hours, corroding to remove the copper foil, transferring the graphene film into deionized water by using a transfer sheet for rinsing, then transferring the graphene film onto a target substrate, airing in a nitrogen cabinet, and removing PMMA by using acetone and ethanol; multilayer graphene, which is a step of repeating a single layer, obtains multiple layers layer by layer.
Step three: sequentially growing a low-temperature GaN nucleating layer and a GaN buffer layer on the two-dimensional material;
in some embodiments, the low-temperature GaN nucleation layer is located on the surface of the two-dimensional material, and the growth temperature is 900-1100 ℃.
In this embodiment, the low-temperature GaN nucleation layer 03: the growth temperature of the two-dimensional material is 1020 ℃, and the growth temperature can be but is not limited to 1020 ℃.
In some embodiments, the GaN buffer layer has a thickness of 10 to 200nm.
In this embodiment, the GaN buffer layer 04: on top of the low temperature GaN nucleation layer, a 100nm thickness is epitaxial, which may be, but is not limited to, 100nm.
Specifically, an MOCVD device is adopted to grow a low-temperature GaN nucleating layer on the surface of graphene at 1020 ℃, and then a 100nm non-doped GaN buffer layer is grown.
Step four: an epitaxial RCLED body structure comprising: the LED comprises an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer;
in this embodiment, the RCLED main body structure includes:
n-GaN layer 05: the electron injection device is used for providing electrons and injecting the electrons into an RCLED active region;
multiple quantum well light emitting layer 06: is AlGaN/GaN or InGaN/GaN quantum well light-emitting layer;
p-GaN layer 07: for providing holes for injection into the RCLED active region and for ohmic contact.
Specifically, the MOCVD is used for extending the RCLED main body structure. By growing a Si-doped GaN electron injection layer on the GaN buffer layer, and thereafter growing In 0.10 Ga 0.90 And finally, growing a Mg-doped GaN hole injection layer for ohmic contact.
Step five: implanting boron ions to form a high-resistance region;
in some embodiments, the boron ion implantation is to implant boron ions under the p-electrode region, forming a high resistance region for limiting the current implantation in this region.
In this embodiment, the high resistance region 08: located below the p-electrode region, boron ions may be implanted, but are not limited to.
Step six: evaporating a metal oxide transparent conductive layer on the p-GaN layer, and photoetching and corroding the metal oxide transparent conductive layer in the n region;
in some embodiments, the metal oxide transparent conductive layer is positioned on the p-GaN layer, and the characteristics of strong conductivity and high transparency are utilized to realize lateral current expansion in the p electrode area and enhance the light extraction rate.
In this embodiment, the metal oxide transparent conductive layer 09: and evaporating 50nm at 220 ℃ for realizing transverse current spreading, and the metal oxide transparent conducting layer can be used for realizing, but is not limited to.
Step seven: performing ICP etching by using the photoresist on the step area as a mask until the n-GaN layer is etched;
in this embodiment, a step region of the n electrode is defined by using a photoresist, the photoresist on the step region is used as a mask, and then ICP etching is performed until an n-GaN layer of the n electrode region is etched, so as to etch an n electrode pattern.
Step eight: photoetching and defining a top DBR layer, wherein the top DBR layer is a low-reflectivity medium DBR pattern and is used as a light outlet;
in this embodiment, the low-reflectivity dielectric DBR patterned layer 10 of the top layer: sputtering 3 pairs of Ta with a thickness of 53.51nm/78.5nm by using reactive ion 2 O 5 /SiO 2 Sputtering 3 pairs of Ta with reactive ion number 2 O 5 /SiO 2 。
Step nine: preparing a metal electrode;
in the present embodiment, the metal n-electrode 11 and p-electrode 12: is one or more of metals such as Cu, al, ni, au, ti, cr, pt and the like in any combination.
Step ten: and depositing an insulating layer on the surface of the device, and removing part of the insulating layer by photoetching corrosion to expose the light outlet and the metal electrode area so as to finish the preparation of the device.
In some embodiments, an insulating layer is deposited on the light-emitting end surface of the RCLED except for the electrode region, the light-emitting port and the isolation channel groove.
In the present embodiment, the insulating layer 13: deposition of SiO by Plasma Enhanced Chemical Vapor Deposition (PECVD) 2 And photoetching and corroding p and n electrodes and a light emitting area of the laser to finish the preparation of the device.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize that the nitride light emitting device fabrication method of the present disclosure.
In summary, the present disclosure provides a method for manufacturing a nitride light emitting device, in which a two-dimensional material is introduced as a buffer layer, and van der waals epitaxy is used to isolate the influence of thermal mismatch and lattice mismatch on an amorphous medium DBR substrate to a certain extent, so that an epitaxial layer is expected to grow according to its inherent lattice; a GaN-based RCLED structure is directly extended on the dielectric DBR; the problems of laser stripping and bonding in the traditional RCLED preparation process are solved, the problem of direct epitaxy is further solved, the process flow is simplified, and the production cost and difficulty are greatly reduced.
It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only directions referring to the drawings, and are not intended to limit the protection scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element relative to another or relative to a method of manufacture, and is used merely to allow a given element having a certain name to be clearly distinguished from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the devices in an embodiment may be adaptively changed and arranged in one or more devices different from the embodiment. The modules or units or components in the embodiments may be combined into one module or unit or component, and furthermore, may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be construed to reflect the intent: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (10)

1. A method of fabricating a nitride light emitting device, comprising:
preparing a bottom DBR layer of a bottom layer on a substrate;
covering a single-layer or multi-layer two-dimensional material film on the bottom DBR layer to form a two-dimensional material buffer layer;
sequentially growing a low-temperature GaN nucleating layer and a GaN buffer layer on the two-dimensional material buffer layer;
extending an RCLED main body structure on the GaN buffer layer, wherein the RCLED main body structure sequentially comprises the following components from bottom to top on the GaN buffer layer: the LED comprises an n-GaN layer, a multi-quantum well light-emitting layer and a p-GaN layer;
performing boron ion implantation on the p-GaN layer to form a high-resistance region; and a metal oxide transparent conducting layer is evaporated on the p-GaN layer;
etching the two sides of the metal oxide transparent conductive layer to the n-GaN layer to form a step area;
preparing a top DBR layer of a top layer on the middle area of the metal oxide transparent conducting layer and photoetching a defined pattern to be used as a light outlet;
a p electrode is arranged on the metal oxide transparent conducting layer on two sides of the top DBR layer, and an n electrode is arranged on the step area;
and depositing an insulating layer on the surface of the nitride light-emitting device, and photoetching and corroding to remove part of the insulating layer and expose the light outlet, the p electrode and the n electrode to finish the preparation of the nitride light-emitting device.
2. The method for manufacturing a nitride light emitting device according to claim 1, wherein the dielectric DBR of the bottom DBR layer and the dielectric DBR of the top DBR layer are two thin film dielectrics with different refractive indices that are alternately grown periodically, respectively, and the reflectivity of the dielectric DBR of the bottom DBR layer is greater than the reflectivity of the dielectric DBR of the top DBR layer.
3. The method for manufacturing a nitride light emitting device according to claim 1, wherein the material of the two-dimensional material thin film layer is one of graphene, boron nitride, molybdenum disulfide, and tungsten disulfide.
4. The method for fabricating a nitride light emitting device according to claim 3, wherein the two-dimensional material buffer layer is prepared by one of a wet transfer, a dry transfer and a CVD method.
5. The method for fabricating a nitride light emitting device according to claim 1, wherein the low temperature GaN nucleation layer is located on a surface of a two-dimensional material at a growth temperature of 900 to 1100 ℃.
6. The method for fabricating a nitride light emitting device according to claim 1, wherein the thickness of the GaN buffer layer is 10 to 200nm.
7. The method for fabricating a nitride light emitting device according to claim 1, wherein the n-GaN layer is used to provide electrons to be injected into the RCLED active region of the epitaxial RCLED body structure;
the multiple quantum well light-emitting layer is an AlGaN/GaN or InGaN/GaN quantum well light-emitting layer;
the p-GaN layer is used to provide holes for injection into the RCLED active region of the epitaxial RCLED body structure and for ohmic contact.
8. The method for manufacturing a nitride light emitting device according to claim 1, wherein the boron ion implantation is to implant boron ions under a p-electrode to thereby form the high-resistance region for blocking the injection of current of the high-resistance region.
9. The method for manufacturing a nitride light emitting device according to claim 1, wherein the metal oxide transparent conductive layer is capable of achieving lateral current spreading and enhancing light extraction efficiency in a p-electrode region.
10. The method of fabricating a nitride light emitting device according to claim 1, wherein the method of epitaxial growth of the RCLED of the epitaxial RCLED body structure is one of MOCVD, MBE, HVPE, and CVD.
CN202110674980.3A 2021-06-17 2021-06-17 Preparation method of nitride light-emitting device Pending CN115498073A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115832135A (en) * 2023-02-14 2023-03-21 江西兆驰半导体有限公司 Silicon-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode
CN115986022A (en) * 2023-03-17 2023-04-18 江西兆驰半导体有限公司 Deep ultraviolet LED epitaxial wafer, preparation method thereof and deep ultraviolet LED

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115832135A (en) * 2023-02-14 2023-03-21 江西兆驰半导体有限公司 Silicon-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode
CN115986022A (en) * 2023-03-17 2023-04-18 江西兆驰半导体有限公司 Deep ultraviolet LED epitaxial wafer, preparation method thereof and deep ultraviolet LED

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