CN115477899A - Gallium nitride chemical mechanical polishing solution based on oxidation-reduction potential mechanism - Google Patents
Gallium nitride chemical mechanical polishing solution based on oxidation-reduction potential mechanism Download PDFInfo
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- CN115477899A CN115477899A CN202210918974.2A CN202210918974A CN115477899A CN 115477899 A CN115477899 A CN 115477899A CN 202210918974 A CN202210918974 A CN 202210918974A CN 115477899 A CN115477899 A CN 115477899A
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- oxidation
- reduction potential
- polishing solution
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention relates to the technical field of gallium nitride chemical mechanical polishing solution, in particular to the technical field of chemical action of oxidation-reduction potential mechanism, comprising the following steps: step S1: adding an oxidation-reduction potential regulator with mass percent m1 into pure water; step S2: adding the grinding particles with the mass percentage of m2, and slowly adding anhydrous ethylenediamine with the mass percentage of m 3; and step S3: adjusting the pH value of the polishing solution by using hydrofluoric acid and glutamic acid.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of gallium nitride chemical mechanical polishing solution, in particular to the technical field of chemical action of an oxidation-reduction potential mechanism.
[ background ] A method for producing a semiconductor device
Although electronic devices such as semiconductor integrated circuits are generally built on a silicon single crystal substrate, gallium nitride GaN having better electrical characteristics is used for power devices. Power devices made of gallium nitride GaN can handle more power, generate less heat, and can be miniaturized.
Recently, with the progress of integrated circuit manufacturing technology, the degree of integration has been remarkably increased, and multilayering and wiring have been increasing, so that planarization of the entire semiconductor wafer, that is, global planarization is required in the process of forming each layer. One of the techniques for achieving such planarization of the entire semiconductor wafer is a polishing method of Chemical Mechanical Polishing (CMP). In the CMP method, slurry containing fine abrasive particles is polished while a non-woven fabric or a polishing pad is pressed against a wafer and rotated. Such a CMP method achieves a relatively precise polishing process because chemical polishing using a liquid component and mechanical polishing using polishing abrasive particles have a synergistic effect.
However, it is not appropriate to apply such polishing processing conditions directly to GaN made of gallium nitride, which is more difficult to polish than SiC single crystal substrates, and therefore there is still a need to improve and find a more optimal polishing solution. The invention provides gallium nitride chemical mechanical polishing solution based on an oxidation-reduction potential mechanism, and the regulation and control of the oxidation-reduction potential of the polishing solution provide a better polishing scheme. The redox potential may reflect redox properties and may reflect the ability and tendency of a solution to gain and lose electrons, and generally in millivolts (mV), a higher value indicates a stronger electron-gaining ability and indicates an oxidation state. Within certain limits, increasing the pH, hardness, alkalinity, salinity, silicate concentration in the water or decreasing the dissolved oxygen in the water can decrease the redox potential.
[ summary of the invention ]
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a gallium nitride chemical mechanical polishing solution based on an oxidation-reduction potential mechanism, in which GaN is a material more difficult to process than SiC, and the oxidation property is imparted to the polishing solution by adjusting the oxidation-reduction potential of anhydrous ferric trichloride or ferric oxide. The method realizes excellent polishing performance in the polishing of the gallium nitride, and the polishing performance of the method is excellent for the gallium nitride GaN.
[ examples ] A method for producing a compound
The invention provides a gallium nitride chemical mechanical polishing solution based on an oxidation-reduction potential mechanism, which comprises the following steps:
step S1: adding an oxidation-reduction potential regulator with mass percent m1 into pure water;
step S2: adding the grinding particles with the mass percentage of m2, and slowly adding anhydrous ethylenediamine with the mass percentage of m 3;
and step S3: adjusting the pH value of the polishing solution by using hydrofluoric acid and glutamic acid;
preferably, the oxidation-reduction potential regulator consists of ferric trichloride and ferric oxide;
preferably, the redox mediator is a compound of anhydrous ferric chloride: the mass ratio of ferric oxide is 1:1-2:1;
preferably, the oxidation-reduction potential regulator is 1-2wt% in mass percentage m1, 2-5wt% in mass percentage m2 of grinding particles, 0.01-0.5 μm in particle size d2 and 0.5-1wt% in mass percentage m3 of anhydrous ethylenediamine;
preferably, the abrasive particles include, but are not limited to, alumina, magnesia, silica, titania, wherein at least one metal oxide is preferably included; lower density oxides (oxide metal elements between 24 and 48 relative to atomic mass) can allow faster diffusion of oxygen through the oxide, resulting in faster oxidation rates;
preferably, the pH of the redox polishing solution is in the range of 0.1-2.5.
Compared with the prior art, the invention has the following advantages:
the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a gallium nitride chemical mechanical polishing solution based on an oxidation-reduction potential mechanism, in which GaN is a material more difficult to process than SiC, and the oxidation property is imparted to the polishing solution by adjusting the oxidation-reduction potential of anhydrous ferric trichloride or ferric oxide. The polishing solution realizes excellent polishing performance in the polishing of gallium nitride, and the polishing solution has excellent polishing efficiency and polishing performance for gallium nitride (GaN).
[ description of the drawings ]
FIG. 1 is a schematic flow chart of a gallium nitride chemical mechanical polishing solution based on oxidation-reduction potential mechanism according to the present invention.
FIG. 2 is a graph of the pH value and the oxidation-reduction potential of a chemical-mechanical polishing solution for gallium nitride based on the oxidation-reduction potential mechanism.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and table 1, the present invention provides a gallium nitride chemical mechanical polishing solution based on oxidation-reduction potential mechanism, comprising the following steps:
step S1: adding an oxidation-reduction potential regulator with mass percent m1 into pure water;
step S2: adding the grinding particles with the mass percentage of m2, and slowly adding anhydrous ethylenediamine with the mass percentage of m 3;
and step S3: adjusting the pH value of the polishing solution by using hydrofluoric acid and glutamic acid;
in step S1 of the present invention, the oxidation-reduction potential regulator is composed of ferric trichloride and ferric oxide;
in step S1 of the present invention, the redox regulator, wherein anhydrous ferric trichloride: the mass ratio of ferric oxide is 1:1-2:1;
in steps S1 and S2 of the invention, the redox potential regulator has a mass percent m1 of 1-2wt%, a mass percent m2 of grinding particles of 2-5wt%, a particle diameter d2 of 0.01-0.5 μm, and a mass percent m3 of anhydrous ethylenediamine of 0.5-1wt%;
in step S2 of the present invention, the abrasive particles include, but are not limited to, aluminum oxide, magnesium oxide, silicon oxide, titanium oxide, wherein at least one metal oxide is preferably included; lower density oxides (oxide metal elements between 24 and 48 relative to atomic mass) can allow faster diffusion of oxygen through the oxide, resulting in faster oxidation rates;
in step S3 of the present invention, the pH of the redox polishing solution is in the range of 0.1 to 2.5.
1. The first embodiment:
adding ferric chloride and ferric oxide with the mass percent m1 of 2wt% into pure water to adjust the oxidation-reduction potential; adding and dispersing grinding particle titanium oxide with the mass percent m2 of 5wt% and the particle diameter d1 of 0.1 mu m; stirring and mixing for 30 minutes at room temperature, and slowly adding anhydrous ethylenediamine with the mass percentage of 0.9 wt%; adjusting the pH value to 1.5 by using hydrofluoric acid and glutamic acid;
2. the second embodiment:
adding ferric chloride and ferric oxide with the mass percent m1 of 1.5wt% into pure water to adjust the oxidation-reduction potential; adding and dispersing 5wt% of grinding particles with the mass percent of m2 and the particle size of d1 of 0.1 mu m; stirring and mixing for 30 minutes at room temperature, and slowly adding anhydrous ethylenediamine with the mass percent of 0.6 wt%; adjusting the pH value to 1.5 by using hydrofluoric acid and glutamic acid;
3. the third embodiment:
adding ferric chloride and ferric oxide with the mass percent m1 of 1.5wt% into pure water to adjust the oxidation-reduction potential; adding and dispersing 5wt% of grinding particles with the mass percent of m2 and the particle diameter d1 of 0.1 mu m of titanium oxide and aluminum oxide; stirring and mixing for 30 minutes at room temperature, and slowly adding anhydrous ethylenediamine with the mass percent of 0.9 wt%; adjusting the pH value to 1.5 by using hydrofluoric acid and glutamic acid;
4. the fourth embodiment:
adding ferric chloride ferric oxide with the mass percent m1 of 1wt% into pure water to adjust the oxidation-reduction potential; adding 5wt% of grinding particle titanium oxide with the particle size d1 of 0.1 mu m in mass percent m2 and dispersing; stirring and mixing for 30 minutes at room temperature, and slowly adding anhydrous ethylenediamine with the mass percent of 0.5 wt%; adjusting the pH value to 1.5 by using hydrofluoric acid and glutamic acid;
5. the fifth embodiment:
adding ferric chloride and ferric oxide with the mass percent m1 of 1wt% into pure water to adjust the oxidation-reduction potential; adding 5wt% of grinding particle titanium oxide with the particle size d1 of 0.1 mu m in mass percent m2 and dispersing; stirring and mixing for 30 minutes at room temperature, and slowly adding anhydrous ethylenediamine with the mass percent of 0.5 wt%; adjusting the pH value to 1.5 by using hydrofluoric acid and glutamic acid;
the method of producing the polishing composition of the embodiment of the present invention is not particularly limited, and for example, the polishing composition can be prepared by stirring and mixing the abrasive particles of the present invention and the oxidation-reduction potential adjustor. As the polishing pad, generally, nonwoven fabric, polyurethane, fluorine resin, and the like can be used without particular limitation. The polishing pad is preferably grooved to collect the slurry.
TABLE 1 comparison of the first to fifth embodiments
FIG. 2 is a diagram of the oxidation-reduction potential of the present invention.
Compared with the prior art, the invention has the following advantages:
the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a gallium nitride chemical mechanical polishing liquid based on an oxidation-reduction potential mechanism, in which GaN is a material that is more difficult to process than SiC, and the oxidation properties of the polishing liquid are imparted by adjusting the oxidation-reduction potential. The invention realizes excellent polishing performance in the polishing of gallium nitride, and has excellent polishing efficiency and polishing performance for gallium nitride GaN.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and any modifications, equivalents, improvements, etc. made within the spirit of the present invention should be included in the scope of the present invention.
Claims (6)
1. A gallium nitride chemical mechanical polishing solution based on oxidation-reduction potential mechanism is characterized in that: the method comprises the following steps:
step S1: adding an oxidation-reduction potential regulator with mass percent m1 into pure water;
step S2: adding the grinding particles with the mass percent of m2, and slowly adding anhydrous ethylenediamine with the mass percent of m 3;
and step S3: adjusting the pH value of the polishing solution by using hydrofluoric acid and glutamic acid.
2. The chemical mechanical polishing solution for gallium nitride based on oxidation-reduction potential mechanism according to claim 1, wherein: the oxidation-reduction potential regulator consists of ferric trichloride and ferric oxide.
3. The oxidation-reduction potential modifier according to claim 2, wherein: the redox regulator, wherein anhydrous ferric trichloride: the mass ratio of ferric oxide is 1:1-2:1.
4. the chemical mechanical polishing solution for gallium nitride based on oxidation-reduction potential mechanism according to claim 1, wherein: the redox potential regulator is characterized in that m1 is 1-2wt%, m2 is 2-5wt%, the particle diameter d2 is 0.01-0.5 mu m, and m3 is 0.5-1wt%.
5. The chemical mechanical polishing solution for gallium nitride based on oxidation-reduction potential mechanism of claim 1, wherein: abrasive particles include, but are not limited to, alumina, magnesia, silica, titania, among others, preferably including at least one metal oxide; lower density oxides (oxide metal elements between 24 and 48 relative to atomic mass) can allow faster diffusion of oxygen through the oxide, resulting in faster oxidation rates.
6. The chemical mechanical polishing solution for gallium nitride based on oxidation-reduction potential mechanism according to claim 1, wherein: the pH value of the redox polishing solution is in the range of 0.1-2.5.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174597A (en) * | 2006-11-02 | 2008-05-07 | 三星康宁株式会社 | GaN single crystal substrate and method for processing surface of GaN single crystal substrate |
| JP2012046397A (en) * | 2010-08-30 | 2012-03-08 | Asahi Glass Co Ltd | Method for manufacturing antibacterial heat-resistant glass container, and antibacterial heat-resistant glass container |
| CN104513627A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Integrated circuit copper CMP composition and preparation method thereof |
| TW201542790A (en) * | 2014-03-31 | 2015-11-16 | Noritake Co Ltd | Method for polishing gan single crystal material |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| CN110551454A (en) * | 2018-06-01 | 2019-12-10 | 凯斯科技股份有限公司 | Polishing slurry composition |
| CN112175523A (en) * | 2019-07-03 | 2021-01-05 | 富士胶片电子材料美国有限公司 | Polishing composition for reducing defects and method of using the same |
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- 2022-07-29 CN CN202210918974.2A patent/CN115477899B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101174597A (en) * | 2006-11-02 | 2008-05-07 | 三星康宁株式会社 | GaN single crystal substrate and method for processing surface of GaN single crystal substrate |
| JP2012046397A (en) * | 2010-08-30 | 2012-03-08 | Asahi Glass Co Ltd | Method for manufacturing antibacterial heat-resistant glass container, and antibacterial heat-resistant glass container |
| TW201542790A (en) * | 2014-03-31 | 2015-11-16 | Noritake Co Ltd | Method for polishing gan single crystal material |
| CN104513627A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Integrated circuit copper CMP composition and preparation method thereof |
| CN106398544A (en) * | 2016-07-27 | 2017-02-15 | 清华大学 | A CMP polishing composition suitable for a gallium nitride material |
| CN110551454A (en) * | 2018-06-01 | 2019-12-10 | 凯斯科技股份有限公司 | Polishing slurry composition |
| CN112175523A (en) * | 2019-07-03 | 2021-01-05 | 富士胶片电子材料美国有限公司 | Polishing composition for reducing defects and method of using the same |
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