CN115472597A - 电子装置和使用该电子装置的变频控制系统 - Google Patents

电子装置和使用该电子装置的变频控制系统 Download PDF

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CN115472597A
CN115472597A CN202110655391.0A CN202110655391A CN115472597A CN 115472597 A CN115472597 A CN 115472597A CN 202110655391 A CN202110655391 A CN 202110655391A CN 115472597 A CN115472597 A CN 115472597A
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electronic device
conductive
elastic body
layer
current outflow
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吴绍阳
胡兆庆
张炜
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Copeland Suzhou Co Ltd
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Emerson Climate Technologies Suzhou Co Ltd
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Priority to CN202110655391.0A priority Critical patent/CN115472597A/zh
Priority to EP22819549.1A priority patent/EP4354499A1/en
Priority to US18/563,544 priority patent/US20240274546A1/en
Priority to PCT/CN2022/097552 priority patent/WO2022257952A1/zh
Publication of CN115472597A publication Critical patent/CN115472597A/zh
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    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
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    • H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M5/4585—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only having a rectifier with controlled elements
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

本公开涉及一种电子装置和使用该电子装置的变频控制系统。该电子装置可以包括：屏蔽层，其插入在开关器件的电流流出端子与接地导体之间；以及导电弹性体，用于连接电流流出端子和屏蔽层。该电子装置结构简单、成本低、效率高，可用于大批量生产。

Description

电子装置和使用该电子装置的变频控制系统
技术领域
本公开涉及电路领域，具体地涉及用于抑制共模噪声的电子装置以及使用该电子装置的变频控制系统。
背景技术
本部分的内容仅提供了与本公开相关的背景信息，其可能并不构成现有技术。
共模噪声是解决电磁兼容(EMC)问题中的一个关键点。产品设计拓扑一旦确定，解决电磁兼容共模噪声问题的传统方式可分为两种：一种方式是通过设计结构复杂的电磁干扰(EMI)滤波器(如图6所示)，通常要求在驱动器输入前端添加两级滤波才能满足EN55022(EN55032)CISPR22 Class B标准要求。同时考虑线缆影响，需要添加一个或多个磁环在输入和输出线缆上。此外仍需考虑金属散热器带来的辐射噪声影响，部分产品可能需要添加屏蔽结构，包括使用屏蔽电缆和屏蔽盒。
另一种常见方式是通过降低噪声源能量，通过PCB叠层结构设计来提高PCB板的EMC性能，或者通过牺牲功率元器件的热性能来改善产品的EMC性能。
但是，采用EMI滤波器结构设计方法的缺陷在于：为了提高电磁干扰性能，需要覆盖所有共模电流环路，而在实际系统中处理所有环路是复杂的，而且难以实现。因此，这种方法成本高和效益低。此外，采用优化源端噪声方法的缺陷在于会增加功率模块的开关损耗。这将导致功率器件温度升高，降低产品的寿命和可靠性。
因此，本领域中需要一种低成本且高效的抑制共模噪声的电子装置。
发明内容
这个部分提供了本公开的一般概要，而不是其全部范围或其全部特征的全面披露。
本公开的目的在于提供一种用于抑制共模噪声的电子装置和使用该电子装置的变频控制系统。
根据本公开的一个方面，提供了一种电子装置，包括：屏蔽层，其插入在开关器件的电流流出端子与接地导体之间；以及导电弹性体，用于连接电流流出端子和屏蔽层。
优选地，在上述电子装置中，在电流流出端子与接地导体之间还可以包括第一导热绝缘层和第二导热绝缘层，并且屏蔽层可以位于第一导热绝缘层和第二导热绝缘层之间。
优选地，在上述电子装置中，导电弹性体的第一表面可以与电流流出端子的面向屏蔽层的表面接触，并且导电弹性体的第二表面可以与屏蔽层接触，第二表面与第一表面相对。
优选地，在上述电子装置中，电流流出端子可以呈扁平状，并且导电弹性体可以呈立方体形状。
优选地，在上述电子装置中，开关器件可以为MOSFET或IGBT，并且电流流出端子可以为开关器件的源极引脚。
优选地，在上述电子装置中，导电弹性体可以由导电橡胶制成。
优选地，在上述电子装置中，接地导体可以为金属散热器。
优选地，在上述电子装置中，屏蔽层可以为金属屏蔽层。
优选地，在上述电子装置中，第一导热绝缘层和第二导热绝缘层可以由陶瓷制成。
根据本公开的另一方面，提供了一种变频控制系统，包括：变频驱动器，其具有如上所述的电子装置。
根据本申请的电子装置可以在改善EMI性能的同时，不降低现有产品的可靠性和效率，有效地减少其它EMI对策元器件的成本，并且能够较便捷的应用到量产产品中。
从在此提供的描述中，进一步的适用性区域将会变得明显。这个概要中的描述和特定例子只是为了示意的目的，而不旨在限制本公开的范围。
附图说明
在此描述的附图只是为了所选实施例的示意的目的而非全部可能的实施，并且不旨在限制本公开的范围。在附图中：
图1是图示根据本公开的电子装置的原理图；
图2是图示根据本公开的实施例的电子装置的安装状态的立体结构图；
图3是图2中的电子装置的安装状态的分解图；
图4是与图2对应的电子装置的安装状态的放大立体结构图；
图5是与图3对应的电子装置的安装状态的放大分解图；以及
图6示出了可以应用根据公开的实施例的电子装置的变频控制系统的示意图。
虽然本公开容易经受各种修改和替换形式，但是其特定实施例已作为例子在附图中示出，并且在此详细描述。然而应当理解的是，在此对特定实施例的描述并不打算将本公开限制到公开的具体形式，而是相反地，本公开目的是要覆盖落在本公开的精神和范围之内的所有修改、等效和替换。要注意的是，贯穿几个附图，相应的标号指示相应的部件。
具体实施方式
现在参考附图来更加充分地描述本公开的例子。以下描述实质上只是示例性的，而不旨在限制本公开、应用或用途。
提供了示例实施例，以便本公开将会变得详尽，并且将会向本领域技术人员充分地传达其范围。阐述了众多的特定细节如特定部件、装置和方法的例子，以提供对本公开的实施例的详尽理解。对于本领域技术人员而言将会明显的是，不需要使用特定的细节，示例实施例可以用许多不同的形式来实施，它们都不应当被解释为限制本公开的范围。在某些示例实施例中，没有详细地描述众所周知的过程、众所周知的结构和众所周知的技术。
下面参照图1来描述根据本公开的电子装置的原理图。图1的(a)图示了在未应用根据本公开的电子装置的情况下的共模噪声的产生和传播路径，而图1的(b)图示了在应用根据本公开的电子装置的情况下的共模噪声的产生和传播路径。
根据本公开的电子装置利用了共模噪声产生和传播原理。共模噪声的主要来源是电力电子器件的快速开关行为(“di/dt”和“dv/dt”)。如图1的(a)所示，虚线箭头所指示的环路示出了利用线路阻抗稳定网络(LISN)测量的由图1的(a)所示的电路的杂散电容C引起的共模噪声传播环路。共模噪声的传播主要通过和大地间的杂散电容C，最终形成共模干扰噪声。
此外，图1中的CGD和CGS为其它杂散电容，RG,in为与具有体二极管的MOSFET的栅极G连接的电阻，PE表示大地或连接至大地的接地导体。需要注意的是，此处仅示出MOSFET作为功率开关器件的示例，当然，功率开关器件也可以是其它开关器件，例如IGBT等。
如图1的(b)所示，通过在功率开关器件和接地导体(例如散热器)之间插入屏蔽金属层，同时将屏蔽金属层连接到MOSFET的源端S的引管脚上，可以缩小共模噪声环路。从图1的(b)可见，共模噪声环路被减小成屏蔽金属层下方的通过杂散电容C2的环路。通过这种方法，还可以降低参考金属平面到大地之间的电压“dv”。需要注意的是，原金属平面电压为“dVD”，而采用根据本公开的电子装置的金属平面对大地电压为“dVs”。由此，通过这种方式可以大大降低因功率器件金属背板和大地间的寄生电容引起的共模电流。
下面参照图2至图5对根据本公开的实施例的用于抑制共模噪声的电子装置的结构进行描述。
图2图示了根据本公开的实施例的电子装置的安装状态的立体结构图，图3是图2中的电子装置的安装状态的分解图，图4是与图2对应的电子装置的安装状态的放大立体结构图，而图5是与图3对应的电子装置的安装状态的放大分解图。如图3和图5所示，电子装置10可以包括导电弹性体101和屏蔽层102(例如，金属屏蔽层)。屏蔽层102插入在开关器件20的电流流出端子201与接地导体50(例如，金属散热器)之间，并且导电弹性体101用于连接电流流出端子201和屏蔽层102。
具体地，在电流流出端子201与接地导体50之间还包括第一导热绝缘层30和第二导热绝缘层40，并且屏蔽层102位于第一导热绝缘层30和第二导热绝缘层40之间。具体地，第一导热绝缘层30位于开关器件20与屏蔽层102之间，并且第二导热绝缘层40位于屏蔽层102与接地导体50之间。第一导热绝缘层30和第二导热绝缘层40可以在起到电隔离作用的同时有效地将热量从开关器件20传导到接地导体50。优选地，第一导热绝缘层30和第二导热绝缘层40由陶瓷制成。
如图2和图4所示，在处于安装状态的情况下，电流流出端子201和屏蔽层102通过导电弹性体101电连接，从而如上面关于图1所述的那样，可以缩小共模噪声环路，并且大大降低因功率器件金属背板和大地间的寄生电容引起的共模电流。
例如，如图3和图5所示，导电弹性体101可以穿过第一导热绝缘层30上的开口或通孔(例如，如图所示的第一导热绝缘层30的角部上的开口)，从而将电流流出端子201与屏蔽层102电连接。
优选地，可以在导电弹性体101与电流流出端子201和屏蔽层102之间施加导热胶，从而在导电弹性体101与电流流出端子201以及导电弹性体101与屏蔽层102之间形成更紧密的接触。
虽然图3和图5中示出屏蔽层102位于第二导热绝缘层40的面向第一导热绝缘层30的表面上，但是屏蔽层102既可以被敷于第一导热绝缘层30的面向第二导热绝缘层40的表面上，也可以被敷于第二导热绝缘层40的面向第一导热绝缘层30的表面上。此外，屏蔽层102也可以仅仅是位于第一导热绝缘层30与第二导热绝缘层40之间的金属薄层，而不需要敷于两者之上。
优选地，可以在屏蔽层102与第一导热绝缘层30和第二导热绝缘层40之间施加导热胶，从而在屏蔽层102与第一导热绝缘层30之间以及屏蔽层102与第二导热绝缘层40之间形成更紧密的接触。
在图2至图5的示例中，导电弹性体101的第一表面(图中的上表面)可以与电流流出端子201的面向屏蔽层102的表面接触，并且导电弹性体101的第二表面(图中的下表面)可以与屏蔽层102接触，第二表面与第一表面相对。这样，通过导电弹性体101的两个相对表面(第一表面和第二表面)与电流流出端子201与屏蔽层102的充分接触，可以增加接触面积，并且形成稳定的接触结构。
优选地，如图2至图5所示，电流流出端子201可以呈扁平状，并且导电弹性体101可以呈立方体形状。
如图5所示，在开关器件20上可以具有通孔202，在第一导热绝缘层30上可以具有通孔301，在屏蔽层102上可以具有通孔1021，在第二导热绝缘层40上可以具有通孔401，并且在接地导体50上可以具有未示出的对应孔。通孔202、通孔301、通孔1021、通孔401和接地导体50的对应孔在上述安装状态下彼此对准，以便可以通过紧固件例如螺钉将开关器件20、第一导热绝缘层30、屏蔽层102和第二导热绝缘层40固定至接地导体50。如图所示，通孔1021的孔径大于通孔301和通孔401的孔径，以避免屏蔽层102和接地导体通过紧固件而接触。
优选地，导电弹性体101可以由导电橡胶制成。在这种情况下，导电弹性体可以具有适当的弹性以便于安装，从而使得电子装置10能够较便捷的应用到量产产品中。当然，导电弹性体101也可以由其他材料制成，只要其能将电流流出端子201与屏蔽层102电连接。
此外，虽然在本实施例中，导电弹性体101呈立方体形状，但是应该理解的是，导电弹性体101不限于立方体形状，也可以是圆柱体(其两个相对平行的表面分别接触电流流出端子201和屏蔽层102)等其它形状。
此外，根据本实施例的电子装置10可以应用于多种开关器件，只需要将开关器件的电流流出端子如上所述地与电子装置10连接即可。例如，在开关器件为MOSFET或IGBT的情况下，电流流出端子201是MOSFET或IGBT的源极引脚。
根据本申请的电子装置可以在改善EMI性能的同时，不降低现有产品的可靠性和效率，有效地减少其它EMI对策元器件的成本，其结构简单、成本低、效率高，可用于大批量生产。
上面关于图2至图5描述的根据本公开的实施例的电子装置10可以应用于如图6所示的变频控制系统，其可以将输入的固定频率的交流电变换成可变频率的交流电。例如，可以将50Hz的工频电变成30到120Hz之间可变频率的交流电。
在图6所示的变频控制系统中包括变频驱动器，变频驱动器可以包括整流桥、升压器、逆变器等。从图6可见，在升压器和逆变器中都包括一个或多个开关器件。因此，可以将根据本公开的实施例的电子装置10应用于升压器和逆变器中的开关器件中的一个或多个，从而抑制电路中的共模噪声。
以上虽然结合附图详细描述了本公开的实施例，但是应当明白，上面所描述的实施方式只是用于说明本公开，而并不构成对本公开的限制。对于本领域的技术人员来说，可以对上述实施方式作出各种修改和变更而没有背离本公开的实质和范围。因此，本公开的范围仅由所附的权利要求及其等效含义来限定。

Claims (10)

1.一种电子装置，包括：
屏蔽层，其插入在开关器件的电流流出端子与接地导体之间；以及
导电弹性体，用于连接所述电流流出端子和所述屏蔽层。
2.根据权利要求1所述的电子装置，其中，在所述电流流出端子与所述接地导体之间还包括第一导热绝缘层和第二导热绝缘层，并且所述屏蔽层位于所述第一导热绝缘层和所述第二导热绝缘层之间。
3.根据权利要求1或2所述的电子装置，其中，所述导电弹性体的第一表面与所述电流流出端子的面向所述屏蔽层的表面接触，并且所述导电弹性体的第二表面与所述屏蔽层接触，所述第二表面与所述第一表面相对。
4.根据权利要求3所述的电子装置，其中，所述电流流出端子呈扁平状，并且所述导电弹性体呈立方体形状。
5.根据权利要求1、2和4中任一项所述的电子装置，其中，所述开关器件为MOSFET或IGBT，并且所述电流流出端子为所述开关器件的源极引脚。
6.根据权利要求1、2和4中任一项所述的电子装置，其中，所述导电弹性体由导电橡胶制成。
7.根据权利要求1、2和4中任一项所述的电子装置，其中，所述接地导体为金属散热器。
8.根据权利要求1、2和4中任一项所述的电子装置，其中，所述屏蔽层为金属屏蔽层。
9.根据权利要求2所述的电子装置，其中，所述第一导热绝缘层和所述第二导热绝缘层由陶瓷制成。
10.一种变频控制系统，包括：
变频驱动器，其具有根据权利要求1至9中任一项所述的电子装置。
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