CN115472537A - Silicon wafer processing device and processing technology - Google Patents
Silicon wafer processing device and processing technology Download PDFInfo
- Publication number
- CN115472537A CN115472537A CN202211246145.0A CN202211246145A CN115472537A CN 115472537 A CN115472537 A CN 115472537A CN 202211246145 A CN202211246145 A CN 202211246145A CN 115472537 A CN115472537 A CN 115472537A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- polishing
- cleaning
- silicon
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 320
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 318
- 239000010703 silicon Substances 0.000 title claims abstract description 318
- 238000012545 processing Methods 0.000 title claims abstract description 40
- 238000005516 engineering process Methods 0.000 title abstract description 8
- 235000012431 wafers Nutrition 0.000 claims abstract description 331
- 238000005498 polishing Methods 0.000 claims abstract description 255
- 238000004140 cleaning Methods 0.000 claims abstract description 133
- 239000007788 liquid Substances 0.000 claims description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 61
- 239000007921 spray Substances 0.000 claims description 53
- 238000005507 spraying Methods 0.000 claims description 44
- 239000003814 drug Substances 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 239000013543 active substance Substances 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 238000007517 polishing process Methods 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229940079593 drug Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 239000006061 abrasive grain Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 3
- 238000000746 purification Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 description 11
- 230000003749 cleanliness Effects 0.000 description 7
- 239000012190 activator Substances 0.000 description 4
- 230000001680 brushing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A silicon wafer processing device and a processing technology comprise: the polishing unit at least comprises a rough polishing part and a fine polishing part, wherein the rough polishing part and the fine polishing part polish the single side surfaces of the silicon wafers, and the rough polishing part and the fine polishing part are used for synchronously polishing a plurality of groups of silicon wafers; the cleaning unit is provided with a first-stage cleaning unit and a second-stage cleaning unit, wherein the first-stage cleaning unit and the second-stage cleaning unit clean the two sides of the silicon wafer, and single groups of silicon wafers are cleaned one by one; a connecting bin is further arranged between the polishing unit and the cleaning unit, a wafer basket capable of bearing a plurality of silicon wafers is arranged in the connecting bin, and the wafer basket can move between the polishing unit and the cleaning unit in a reciprocating mode. The silicon wafer processing device is particularly suitable for polishing and cleaning large-size silicon wafers, is optimized, has reasonable structural design, can ensure that the silicon wafers are continuously polished and cleaned, and can obtain silicon wafer products with high flatness and high purification degree after processing.
Description
Technical Field
The invention belongs to the technical field of silicon wafer processing, and particularly relates to a silicon wafer processing device and a processing technology.
Background
In the process of polishing and processing a silicon wafer, flatness and cleanliness are very important parameters and are also important parameters which are difficult to realize in the whole polishing process, and the balance between the flatness and the cleanliness of the silicon wafer is realized, so that the two parameters of high flatness and high cleanliness can be realized in the best state, and the best state is difficult to realize. The silicon wafer is polished by chemical etching and mechanical grinding to obtain a smooth and flat surface. And the cleaning is to strip the particles on the surface of the silicon wafer through oxidation by chemical liquid medicine, and finally realize the state of high flatness and high cleanliness. With the reduction of the characteristic size of a semiconductor and the improvement of the integration level, the requirements on the flatness and the cleanliness of the surface of a silicon wafer are higher and higher, and the original polishing device and the original polishing process cannot meet the requirements on higher flatness and cleanliness.
Disclosure of Invention
The invention provides a silicon wafer processing device and a processing technology, which are particularly suitable for polishing and cleaning procedures of large-size silicon wafers and solve the technical problems of unqualified flatness and cleanliness of the silicon wafers and low processing efficiency caused by unreasonable arrangement of the conventional processing structure.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a silicon wafer processing apparatus includes:
the polishing unit at least comprises a rough polishing part and a fine polishing part, and the rough polishing part and the fine polishing part polish the single side of the silicon wafer and synchronously polish a plurality of groups of silicon wafers;
the cleaning unit is provided with a first-stage cleaning unit and a second-stage cleaning unit, wherein the first-stage cleaning unit and the second-stage cleaning unit clean the two sides of the silicon wafer, and single groups of silicon wafers are cleaned one by one;
a connecting bin is further arranged between the polishing unit and the cleaning unit, a wafer basket capable of bearing a plurality of silicon wafers is arranged in the connecting bin, and the wafer basket can move between the polishing unit and the cleaning unit in a reciprocating mode.
Further, the rough polishing part and the fine polishing part are both provided with a polishing table and a polishing pad;
each polishing platform is provided with two polishing heads arranged side by side, and the lower end faces of the polishing heads are in adsorption connection with the silicon wafers;
all the polishing heads on each polishing table are symmetrically arranged along the diameter of the polishing table and synchronously rotate in the same direction;
and for the same silicon wafer, the same polishing head is adopted to control the same silicon wafer to be subjected to rough polishing and fine polishing in sequence.
Further, the polishing unit is provided with two fine polishing parts, and eight polishing heads are configured on one of the rough polishing part and the two fine polishing parts, wherein the two polishing heads are transfer stations;
each polishing table is also provided with a liquid spraying pipe; all the polishing tables are arranged on the same circumference; all the polishing heads move along the annular track.
Further, the one-level wash with the second grade is washd and all is equipped with:
the upper end face of the fixed platform is provided with a plurality of uniformly distributed tracks;
the rotary head is provided with an annular groove along the outer wall surface of the rotary head, and the groove is directly contacted with the edge of the silicon wafer;
the supporting column is fixed on the fixed table in a vertical arrangement, is connected with the track in a sliding manner, is internally provided with a rotating shaft, and is connected with the top of the rotating shaft;
driving all the supporting columns to drive the rotating heads to move towards one end close to the center of the fixed table synchronously to clamp the silicon wafer along the track through the rotating shaft, or moving towards one end far away from the center of the fixed table synchronously to loosen the silicon wafer;
and driving all the rotating shafts to drive the rotating heads to rotate so as to drive the silicon wafer to rotate.
Furthermore, the extending ends of all the rails are intersected at the circle center of the fixed table and are divergently arranged along the radial surface of the fixed table;
the silicon wafer cleaning device comprises a silicon wafer, wherein a plurality of symmetrically arranged spray pipes are arranged on two sides of the silicon wafer, all the spray pipes are arranged at the edge of the silicon wafer, and spray heads of all the spray pipes are obliquely arranged towards one side of the center of the silicon wafer;
all the spray pipes on each side surface of the silicon wafer are symmetrically arranged relative to the diameter of the silicon wafer;
and all the nozzles arranged on the two side surfaces of the silicon chip are arranged at the same position.
Furthermore, in the primary cleaning, brushes are arranged on two side surfaces of the silicon wafer, are arranged in a single-side semicircle of the silicon wafer and can reciprocate along the diameter direction of the semicircle of the silicon wafer;
in the secondary cleaning, an air pipe for injecting air is arranged on each side surface of the silicon wafer, and the air pipe and the spray pipe are arranged side by side;
all the gas pipes on each side surface of the silicon wafer are symmetrically arranged relative to the diameter of the silicon wafer;
and all the air pipes arranged on the two side surfaces of the silicon chip are arranged at the same position.
A silicon wafer processing treatment process adopts the treatment device, and comprises the following steps:
controlling the silicon wafer to carry out rough polishing and fine polishing;
controlling the silicon wafer to be cleaned at least twice;
wherein, in the course of rough polishing and fine polishing, the front side of the silicon wafer is polished;
and in the cleaning process, cleaning the two sides of the silicon wafer.
Furthermore, in the polishing process, the concentration of the silicon dioxide abrasive particles contained in the rough polishing liquid is 18-22%, and the average particle size of the silicon dioxide is 40-50nm;
the components of the fine polishing solution used for the two times of fine polishing are the same, the concentration of the silicon dioxide abrasive particles contained in the fine polishing solution is 8.7-10%, and the average particle size of the silicon dioxide is 30-38nm;
adding an active agent for a certain time in the course of rough polishing and fine polishing, wherein the time for adding the active agent is the same and is not less than 5s;
and carrying out pure water cleaning after each rough polishing and each fine polishing.
Further, in the primary cleaning process, the cleaning liquid medicine is a mixed liquid of ammonia water, hydrogen peroxide and water, and the double sides of the silicon wafer are brushed with a brush while spraying the liquid medicine;
in the secondary cleaning process, the adopted cleaning liquid medicines are hydrofluoric acid liquid medicine and ozone water liquid medicine, and the hydrofluoric acid liquid medicine and the ozone water liquid medicine are independently sprayed.
Further, in the primary cleaning, after the liquid medicine cleaning, pure water is adopted to clean the two sides of the silicon wafer, and the rotation speed of the silicon wafer is higher than that of the silicon wafer during the liquid medicine cleaning;
in the secondary cleaning, spraying nitrogen gas on the two sides of the silicon wafer for drying after cleaning with the liquid medicine, wherein the rotating speed of the silicon wafer is higher than that of the silicon wafer during cleaning with the liquid medicine;
wherein the rotation speed of the silicon wafer during cleaning with the liquid medicine is 40-60rpm; the rotation speed of the silicon wafer during pure water cleaning and nitrogen gas spraying is 150-250rpm.
The silicon wafer processing device and the processing technology are particularly suitable for polishing and cleaning procedures of large-size silicon wafers, have reasonable structural design, can ensure that the silicon wafers are continuously polished and cleaned, and can obtain silicon wafer products with high flatness and high purification degree after processing; the thickness of a 12-inch silicon wafer can reach 775 +/-20 mm, the flatness (GBIT) of the back surface of the silicon wafer is less than or equal to 0.2 mu m, the total flatness (TIR) is less than or equal to 0.2 mu m, and the local flatness (SFQR) (26 x 33) is less than or equal to 20nm.
Drawings
FIG. 1 is a schematic structural view of a silicon wafer processing apparatus according to an embodiment of the present invention;
FIG. 2 is a front view of a silicon wafer polishing unit according to an embodiment of the present invention;
FIG. 3 is a top view of a silicon wafer polishing unit according to an embodiment of the present invention;
FIG. 4 is a front view of a silicon wafer polishing unit according to an embodiment of the present invention;
FIG. 5 is a top view of a wafer cleaning unit according to an embodiment of the present invention;
FIG. 6 is a flow chart of a silicon wafer processing process according to an embodiment of the invention.
In the figure:
1. polishing unit 2, cleaning unit 10, and rough polishing unit
11. Polishing table 12, polishing pad 13 and polishing head
14. A liquid spraying pipe 15, a brush 16 and a water spraying pipe
20. Fine polishing part 30, connecting bin 31 and sheet basket
32. Slideway 40, first-stage cleaning 41 and fixing table
42. Rotating head 43, supporting column 44 and track
45. Brush 50, secondary cleaning 51 and spray pipe
52. Gas pipe 60, silicon wafer
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The embodiment proposes a silicon wafer processing device, as shown in fig. 1, which comprises a polishing unit 1 and a cleaning unit 2, wherein the polishing unit 1 is at least provided with a rough polishing part 10 and a fine polishing part 20, the rough polishing part 10 and the fine polishing part 20 polish one side surface of a silicon wafer 60, and the rough polishing part 10 and the fine polishing part 20 polish multiple groups of silicon wafers synchronously; the cleaning unit 2 is provided with a primary cleaning 40 and a secondary cleaning 50, the primary cleaning 40 and the secondary cleaning 50 clean both sides of the silicon wafer 60, and the single groups of silicon wafers 60 are cleaned one by one. A connecting bin 30 is further arranged between the polishing unit 1 and the cleaning unit 2, a wafer basket 31 capable of bearing a plurality of silicon wafers is arranged in the connecting bin 30, and the wafer basket 31 can reciprocate between the polishing unit 1 and the cleaning unit 2.
As shown in fig. 1-2, the polishing unit 1 sequentially comprises a rough polishing part 10 and two fine polishing parts 20, wherein a polishing table 11 and a polishing pad 12 arranged on the polishing table 11 are arranged in each of the rough polishing part 10 and the fine polishing parts 20; two polishing heads 13 arranged side by side are arranged on each polishing table 11, a silicon wafer 60 is arranged on the lower end face of each polishing head 13, the polishing heads 13 adsorb the silicon wafer 60 through vacuum, the polishing heads 13 rotate by themselves, and the silicon wafers 60 are directly contacted with the polishing pads 12 by controlling the downward movement of the polishing heads 13.
The two polishing heads 13 on each polishing table 11 are symmetrically arranged along the diameter of the polishing table 11 and rotate synchronously and in the same direction. Each polishing platform 11 is also provided with a liquid spraying pipe 14, and the liquid spraying pipe 14 is used for spraying rough polishing liquid or fine polishing liquid; the liquid spray tube 14 is disposed near the center of the polishing platen 11, and the polishing liquid is gradually dispersed and dispersed onto the polishing pad 12 by the rotation of the polishing platen 11.
A brush 15 and a high-speed water spray pipe 16 are provided on the opposite side of the liquid spray pipe 14, the brush 15 is used for brushing the polishing pad 12, and the brush 15 is provided on either side of the two polishing tables 11, and is automatically rotated by itself while being horizontally reciprocated in the diameter direction of the polishing head 11, the moving direction and the rotating direction of which are shown in fig. 3. After the chemical polishing, the water spray pipe 16 sprays water on the polishing pad 12 separately, the polishing head 13 and the polishing table 11 are controlled to drive the polishing pad 12 to rotate, and pure water is used for cleaning the lower end surface of the silicon wafer 60 to remove impurities and particles on the surface.
Further, after polishing is completed, the polishing table 11 is left empty, and then the polishing pad 12 is brushed while spraying pure water thereon to remove the polishing liquid, silicon powder particles, and other impurities on the polishing pad 12.
The arrangement structures of the silicon wafer 60, the liquid spraying pipe and the brush 15 on the rough polishing part 10 and the fine polishing part 20 are the same, and the biggest difference is that the components of the polishing liquid are different. During rough polishing and fine polishing, the front surface of the silicon wafer 60 is always arranged downward, only the front surface of the silicon wafer 60 is polished, and the polishing head 13 adsorbs the back surface of the silicon wafer 60 under control. Two silicon wafers 60 are arranged on each polishing platform 11, and the polishing platforms 11 which are arranged adjacently are arranged on two concentric circular ring-shaped tracks in parallel.
That is, the track of all the polishing tables 11 is a circular circumference, which corresponds to all the polishing tables 11 being arranged on the same circumference, and all the polishing heads 11 being moved along a circular track. Further, in order to adapt to the movement locus of the polishing head 11, the rough polishing section 10 and the two fine polishing sections 20 are also arranged in a ring shape, and are disposed on the same circumference. For the same silicon wafer, the same polishing head 11 is used to control the same silicon wafer to perform a rough polishing and a fine polishing in sequence.
Further, the polishing unit 1 is configured with a rough polishing part 10 and two fine polishing parts 20, and eight polishing heads 13 are configured for the rough polishing part 10 and the two fine polishing parts 20, two polishing heads 12 are configured for each polishing platform 11, and the redundant two polishing heads 13 are used as transfer stations to prepare the next group of silicon wafers 60 for polishing at any time by using the upper silicon wafer 60.
The connecting bin 30 is a closed bin, a moving slide way 32 is arranged in the connecting bin, the silicon wafers 60 are horizontally placed in the wafer basket 31, and the front surfaces of the silicon wafers 60 are arranged downwards. The wafer basket 31 is used for placing at least two silicon wafers 60 so as to ensure that the silicon wafers 60 can be arranged on each fixed table 41 in the cleaning unit 2 in at least one round for cleaning. The closed connection bin 30 can ensure that the environment for placing the silicon wafer 60 is not polluted by external connection, because the polished silicon wafer 60 is easy to adhere to impurities in air, and a lot of impurities are not changed for subsequent cleaning. The wafer basket 31 is a structure in which silicon wafers are horizontally inserted, and is horizontally placed on a tray, and the polished silicon wafers 60 are directly horizontally inserted into the wafer basket 31 by being removed from the polishing table 11 in the second finishing polishing section 20 by a robot. The sheet basket 31 is then moved directly to the qing si unit 2 along the slide 32.
As shown in fig. 4-5, the cleaning unit 2 is configured with a primary cleaning 40 and a secondary cleaning 50, and the primary cleaning 40 and the secondary cleaning 50 are both provided with a fixed platform 41, a rotating head 42 and a supporting column 43 for fixing the rotating head 42, and the fixed platform 41, the rotating head 42 and the supporting column 43 are cooperatively used for controlling the silicon wafer 60 to be horizontally suspended and enabling two side surfaces of the silicon wafer 60 to be exposed, and controlling the silicon wafer 60 to rotate.
Specifically, a plurality of evenly distributed rails 44 are arranged on the upper end face of the fixed table 41, and a supporting column 43 and a rotating head 42 matched with the supporting column 43 are arranged on each rail 44. The supporting column 43 is fixed on the fixing table 41 and is vertically arranged, the supporting column is connected with the rail 44 in a sliding mode, a rotating shaft is arranged inside the supporting column 43, and the rotating head 42 is connected with the top of the rotating shaft.
The extended ends of all the rails 32 intersect at the center of the fixed table 41 and are divergently arranged along the radial surface of the fixed table 41. At least three supporting columns 43 and three rotating heads 42 are arranged on each fixed table 41, and the supporting columns 43 are uniformly arranged along the radial surface of the fixed table 41. An annular groove is provided along the outer wall of the rotor 42 and directly contacts the edge of the silicon wafer 60.
And driving all the supporting columns 43 to drive the rotating head 42 to move along the rail 44 through the rotating shaft synchronously towards one end close to the circle center of the fixed table 41, synchronously contracting the placing space to clamp the silicon wafer 62, or synchronously towards one end far away from the circle center of the fixed table 41, and synchronously expanding the placing space to loosen the silicon wafer. During the cleaning process, all the rotating shafts are driven to drive the rotating head 42 to rotate so as to drive the silicon wafer 60 to rotate in the air.
The silicon wafer 60 is placed in the wafer basket 31, and after being sucked and fixed by the robot hand, the silicon wafer 60 is inverted so that the front surface of the silicon wafer 60 faces upward and the back surface faces downward. And controlling the manipulator to drive the silicon wafer 60 to move to the cleaning unit 2 and to be right above the fixed table 41 in the cleaning unit 40, and simultaneously adjusting the horizontal position of the silicon wafer 60. And controlling all the supporting columns 43 to drive the rotating heads 42 to synchronously slide along the rails 44 towards one end close to the circle center of the fixed table 41, and shrinking the placing space together to enable the grooves of all the rotating heads 42 to be in contact with the outer edge of the silicon wafer 60 so as to fix and suspend the silicon wafer 60. And then the rotating shafts on all the supporting columns 43 are controlled to synchronously rotate in the same direction, so that all the rotating heads 42 synchronously and in the same direction provide a driving force for the silicon wafer 60 to rotate, and the silicon wafer 60 is driven to horizontally rotate. The rotation speed of the spindle is controlled, and the rotation speed of the silicon wafer 60 can be indirectly adjusted.
Furthermore, a plurality of symmetrically arranged spray pipes 51 are arranged on both sides of the silicon wafer 60, all the spray pipes 51 are arranged at the edge of the silicon wafer 60, and the spray heads of all the spray pipes 51 are arranged in an inclined manner towards one side of the center of the silicon wafer 60. The angle of inclination may be determined based on the actual situation, but the angle is not more than 90 °.
Further, during the rotation of the silicon wafer 60, the cleaning solution or pure water may be driven to disperse on the surface thereof, and the cleaning solution or pure water may be driven to disperse gradually toward the center of the silicon wafer 60. In order to ensure uniformity of the silicon wafer 60 being cleaned on both sides, all the nozzles 51 on each side of the silicon wafer 60 are symmetrically arranged with respect to the diameter of the silicon wafer 60; and all the nozzles 51 disposed at both side surfaces of the silicon wafer 60 are disposed at the same position. That is, nozzles 51 for spraying a cleaning chemical and/or nozzles 51 for spraying pure water are provided to be vertically symmetrical with respect to each of the fixing tables 41, and the nozzles 51 are provided to be symmetrical with respect to the upper surface of the silicon wafer 60; and symmetrically arranged spray pipes 51 are also arranged on the lower surface of the silicon wafer 60, and all the spray pipes 51 arranged up and down are arranged opposite to each other.
All the nozzles 51 and the air pipes 52 can move up and down along the vertically arranged telescopic rods, and all the nozzles 51 and the air pipes 52 are arranged far away from the rotating head 52 before the silicon wafer 60 is placed; after the silicon wafer 60 is stably fixed, all the nozzles 51 and the gas pipes 52 on both sides of the silicon wafer 60 gradually approach the surfaces of both sides of the silicon wafer 60.
Further, in the primary cleaning 40, since the chemical solution is a mixed solution of ammonia water, hydrogen peroxide and water, the chemical solution is prepared in advance, and is extracted from the preparation tank and directly sprayed on the surface of the silicon wafer 60, four spray pipes 51 are required for spraying the chemical solution in the primary cleaning 40. In the cleaning process, pure water is required to be used for cleaning after the cleaning liquid is treated, so that a water film is formed on the surface of the silicon wafer 60 and is used for protecting the two sides of the silicon wafer 60 from air pollution. That is, four spray pipes 51 for spraying pure water are further provided in the primary cleaning 40. That is, two nozzles 51 for spraying a cleaning chemical and two nozzles 51 for spraying pure water are provided on each side of the silicon wafer 60, and the nozzles 51 for spraying pure water and the nozzles 51 for spraying a cleaning chemical are arranged side by side, are disposed near both ends of the diameter of the silicon wafer 60, and are symmetrically disposed with respect to the diameter of the silicon wafer 60. Two spray pipes 51 for spraying cleaning solution and two spray pipes 51 for spraying pure water, which are vertically arranged in both side surfaces of the silicon wafer 60, are arranged at the same position.
The brushes 45 are respectively disposed on both side surfaces of the silicon wafer 60, that is, two brushes 45 are respectively disposed in the same single-sided semi-circle of the upper and lower side surfaces of the silicon wafer 60 to ensure the balance degree of cleaning the silicon wafer 60, and the brushes 45 are controlled by a telescopically disposed link rod and can reciprocate along the diameter direction of the semi-circle of the silicon wafer 60, and the moving direction thereof is shown in fig. 5. At the same time, the brush 45 is also capable of spinning, being configured in a rotatable circular configuration. The position of the brush 45 is set apart from the nozzle 51 to avoid interference of the brush 45 with the nozzle 52 during brushing. Before the silicon wafer is cleaned, when the nozzle 51 is simultaneously brought close to the surface of the silicon wafer 60, the brush 45 is also brought close to both side surfaces of the silicon wafer 60 until it is moved into contact with the surface of the silicon wafer 60.
The brush 45 is operated only when the chemical is sprayed, and the other spray tube 51 for spraying pure water is not operated when the spray tube 51 for spraying the cleaning chemical is operated. The pure water cleaning is performed after the liquid medicine cleaning, and at this time, the spray pipe 51 for spraying pure water starts to operate, the brush 45 and the spray pipe 51 for spraying the cleaning liquid medicine stop operating, and the brush 45 is spaced apart from the surface of the silicon wafer 60 in a vertical height. After the silicon wafer 60 is sprayed with pure water for a certain period of time, the rotation of the rotary head 52 is stopped and the rotation of the silicon wafer 60 is stopped. When the pure water is sprayed, the silicon wafer 60 is rotated at a speed higher than that of the cleaning chemical solution when the pure water is sprayed, in order to form a water film on both surfaces of the silicon wafer 60 in a short time.
After the primary cleaning 40 is finished, the silicon wafer 60 is transferred from the primary cleaning 40 to the fixed table 41 of the secondary cleaning 50 by the robot, and the support columns 43 are controlled to drive the rotating head 42 to reinforce the edge of the silicon wafer 60 and to suspend the silicon wafer 60.
Since the chemical solution in the second cleaning 50 is an acid-washing chemical solution, which contains a hydrofluoric acid chemical solution and an ozone water chemical solution, and the hydrofluoric acid chemical solution and the ozone water chemical solution are both independently sprayed and synchronously sprayed, four spray pipes 51 for spraying the hydrofluoric acid chemical solution having a certain concentration and four spray pipes 51 for spraying the ozone water chemical solution having a certain concentration are provided in the second cleaning 50. Among them, the distribution of the spray pipes 51 for spraying the hydrofluoric acid chemical and the spray pipes 51 for spraying the ozonated water chemical is the same as the distribution of the spray pipes 51 for spraying the rinse chemical and the spray pipes 51 for spraying the pure water in the primary rinse 40, and will not be described in detail.
In the secondary cleaning 50, the silicon wafer 60 is acid-washed for the purpose of removing the residual cleaning solution for the primary cleaning 40 on both sides of the silicon wafer 60 and simultaneously oxidizing both side surfaces of the silicon wafer 60 to form an oxide film to protect the surface of the silicon wafer 60.
An air pipe 52 for injecting air is further arranged on each side surface of the silicon wafer 60, and the air pipe 52 and the spray pipe 51 are arranged side by side; all of the gas tubes 52 on each side of the wafer 60 are symmetrically positioned with respect to the diameter of the wafer 60; and all the gas pipes 52 disposed at both sides of the silicon wafer 60 are disposed at the same position. In the secondary cleaning 50 process, the silicon wafer 60 needs to be dried on both surfaces after being cleaned with the liquid medicine, and the silicon wafer 60 cannot be directly dried due to the suspension thereof, so that the two surfaces of the silicon wafer 60 are provided with air pipes 52 for introducing nitrogen, that is, four air pipes 52 are arranged in parallel with the spray pipe 51 for spraying the hydrofluoric acid liquid medicine and the spray pipe 51 for spraying the ozone water liquid medicine, respectively.
In the secondary cleaning 50 process, the silicon wafer 60 is cleaned by the liquid medicine, at this time, all the nozzles 51 on both sides work, but the air pipe 52 does not work; after the liquid medicine is cleaned, all the spray pipes 51 stop working, and the air pipe 52 starts working; after the nitrogen gas is introduced for a certain period of time, the rotation of the silicon wafer 60 is stopped. In the whole cleaning process, the silicon wafer 60 is always rotated, but the rotating speed of the silicon wafer 60 is higher than that of the silicon wafer 60 during cleaning with the liquid medicine when the nitrogen is sprayed, so that the liquid medicine on the surface of the silicon wafer 60 is quickly dried under high-speed rotation, and meanwhile, the nitrogen can quickly dry the liquid medicine on the surface of the silicon wafer 60.
A silicon wafer processing technology, which adopts the processing device as described in any one of the above, as shown in fig. 6, and comprises the steps of:
controlling the silicon wafer 60 to perform rough polishing and fine polishing;
controlling the silicon wafer 60 to perform cleaning at least twice;
wherein, in the course of rough polishing and fine polishing, the front surface of the silicon wafer 60 is polished;
in the cleaning process, both sides of the silicon wafer 60 are cleaned.
Specifically, the silicon wafer 60 is controlled to perform rough polishing and twice fine polishing in the polishing unit 1 in sequence.
During rough polishing, the manipulator continuously places two silicon wafers 60 on the rotating table, and the silicon wafers are synchronously adsorbed and adhered to the lower end face of a group of polishing heads 13 arranged side by side; the polishing head 13 moves the silicon wafer 60 to a position directly above the polishing pad 12 in the rough polishing section 10. The polishing table 11 is controlled to drive the polishing pad 12 to rotate, the liquid spraying pipe 14 is controlled to spray rough polishing liquid, the two polishing tables 11 are synchronously controlled to drive the two silicon wafers 60 to rotate, and the rotating direction of the polishing tables 11 is opposite to that of the polishing head 13.
Wherein the concentration of the silicon dioxide abrasive particles contained in the rough polishing solution is 18-22%, the average particle size of the silicon dioxide is 40-50nm, and the volume ratio of the rough polishing solution to water is 1:25; the concentration of the rough polishing solution is 20 degrees, and the rough polishing time is 200-300s.
Only adopting rough polishing liquid to polish at the beginning, and softening the alkaline polishing liquid on the surface of the silicon wafer by the rough polishing liquid after polishing for 10-50 s. Then, an active agent is introduced, and the active agent and the rough polishing liquid polish particles and impurities on the surface of the silicon wafer together, so that the active agent can accelerate the separation of the particles on the surface of the silicon wafer and the surface of the silicon wafer. After the activator is introduced for a period of time, the polishing is continued in the rough polishing solution, preferably, the activator is added for a period of 5 seconds for economic reasons, and also to maximize the utilization of the activator.
After the silicon wafer 60 is polished by the rough polishing solution, the front surface of the silicon wafer 60 needs to be rinsed by pure water, that is, the liquid spraying pipe 14 is controlled to stop working, and the water spraying pipe 16 is controlled to start working, so as to clean impurities and the rough polishing solution on the surface of the silicon wafer 60.
After the rough polishing, the silicon wafer 60 is controlled to perform two times of fine polishing, and the purpose of the fine polishing is to adopt fine polishing liquid with finer particles to polish particles and impurities on the surface of the silicon wafer so as to preserve the purity of the surface of the silicon wafer. The two polishing heads 13 drive the silicon wafer 60 to move to the polishing table 11 in the first fine polishing section 20. The same principle as the rough polishing principle is adopted, the polishing table 11 is controlled to drive the fine polishing pad 12 to rotate, fine polishing liquid is sprayed onto the polishing pad 12, and meanwhile, the two polishing heads 13 are controlled to drive the silicon wafer 60 to rotate reversely, wherein the rotating speed of the polishing table 11 is different from that of the polishing heads 13. After the polishing by the polishing solution, the front surface of the silicon wafer 60 is cleaned by pure water, and the polishing solution and impurities on the surface of the silicon wafer 60 are cleaned.
Then, the above process is repeated, and the silicon wafer 60 is controlled to the second fine polishing part 20 to perform a fine polishing on the silicon wafer 60 again.
The components of the fine polishing solution used for the two times of fine polishing are the same, the concentration of the silicon dioxide abrasive particles contained in the fine polishing solution is 8.7-10%, and the average particle size of the silicon dioxide is 30-38nm; the volume ratio of all the fine polishing solutions to water is 1:30, the temperature of the fine polishing solution is 22 degrees. The time of each fine polishing is 200-300s, and the time of the two fine polishing is the same.
Adding an active agent in the two fine polishing processes, wherein the time for adding the active agent is the same and is not less than 5s; that is, at least 5 seconds of activator is added during the fine polishing process to ensure that all silicon powder particles on the surface of the silicon wafer 60 are completely removed. The time period and time for adding the active agent are the same in the two fine polishing processes, and preferably, the time for adding the active agent is 5s. Namely, only the fine polishing solution is used for polishing at the beginning, and after 10-50s of polishing, the residual less polishing solution on the surface of the silicon wafer is softened by the fine polishing solution. Then, an active agent is introduced, and the active agent and the fine polishing solution polish particles and impurities on the surface of the silicon wafer together, wherein the active agent can accelerate the separation of the particles on the surface of the silicon wafer from the surface of the silicon wafer, and the fine polishing solution can further polish the impurities on the surface of the silicon wafer. And after the activating agent is introduced for a period of time, continuing polishing in the fine polishing solution.
The polished silicon wafer 60 is driven by the polishing head 13 to move vertically upwards and is far away from the polishing table 11; and then the manipulator is controlled to be gradually placed on the lower end surface of the polishing table 11 to support the silicon wafers 60 so as to gradually place the two silicon wafers into the wafer basket 31 in the connecting bin 30 to be horizontally placed. The re-control basket 31 moves along the slide 32 to the washing unit 2.
Further, the silicon wafers are sequentially taken out again by the robot arm, and the silicon wafers 60 are sequentially cleaned in the primary cleaning 40 and the secondary cleaning 50.
Specifically, in the primary cleaning 40, the cleaning liquid is sprayed on both sides of the silicon wafer 60 while being brushed by the brush 45, and after the cleaning by the liquid, the both sides of the silicon wafer 60 are cleaned by pure water, so that a water film is formed on both surfaces of the silicon wafer 60.
The silicon wafer 60 is fixed by the robot arm, the robot arm moves the polished silicon wafer 60 to the position right above the fixing table 41 in the primary cleaning 40, and the horizontal position of the silicon wafer 60 is adjusted to control the front side of the silicon wafer 60 to face upwards and the back side of the silicon wafer 60 to face downwards.
And controlling all the supporting columns 43 to drive the rotating heads 42 to synchronously slide towards one end close to the circle center of the fixed table 41 along the rails 44, and simultaneously contracting the placing space so as to enable the grooves of all the rotating heads 42 to be in contact with the outer edge of the silicon wafer 60 to fix the silicon wafer 60 in a suspension manner. And controlling all the spray pipes 51 to be synchronously close to the surface of the silicon wafer 60, and simultaneously controlling the brushes 45 to be close to the surface of the silicon wafer 60 until the silicon wafer 60 moves to the standard position.
After the silicon wafer 60 is fixed, the rotating shafts on all the supporting columns 43 are controlled to rotate synchronously and equidirectionally, so that all the rotating heads 42 synchronously and equidirectionally provide a driving force for the rotation of the silicon wafer 60, and the silicon wafer 60 is driven to rotate horizontally. And simultaneously controlling four spray pipes 51 for spraying liquid medicine to spray mixed liquid of ammonia water, hydrogen peroxide and water to the surfaces of the two sides of the silicon wafer 60, wherein the volume ratio of the mixed liquid of the ammonia water, the hydrogen peroxide and the water is 1:2:100. and simultaneously controlling the brush 45 to start working, wherein the brush 45 reciprocates on the surface of the silicon wafer 60 along the diameter direction of the silicon wafer 60 while rotating. The cleaning solution removes the residual polishing solution on the surfaces of both sides of the silicon wafer 60, and simultaneously the solution is uniformly distributed on the entire surface of the silicon wafer 60 by the brush 45, and particle impurities on the surface of the silicon wafer 60 can be brushed away.
And when the pure water is cleaned on the surfaces of the two sides of the silicon wafer 60 after the liquid medicine is cleaned, the spray pipe 51 for spraying the pure water starts to work, the brush 45 stops working and is far away from the surface of the silicon wafer 60 along the vertical height, and after the pure water is sprayed for 10-15s, the rotation of the rotary head 42 is stopped, so that the silicon wafer 60 stops rotating. When spraying pure water, the rotating speed of the silicon wafer 60 is higher than that of the liquid medicine when spraying the pure water, wherein the rotating speed of the silicon wafer 60 during the pure water cleaning is 150-250rpm, and the rotating speed of the silicon wafer 60 during the liquid medicine cleaning is 40-60rpm; the purpose is to form a water film on both surfaces of the silicon wafer 60 in a short time.
Specifically, the robot further removes the silicon wafer 60 from the primary cleaning 40, transfers the silicon wafer 60 to the fixed table 41 of the secondary cleaning 50, and drives the rotating head 42 by controlling the supporting columns 43 to reinforce the edge of the silicon wafer 60 and suspend the silicon wafer.
And then all the nozzles 51 and the air pipes 52 are controlled to be synchronously close to the surface of the silicon wafer 60 until the silicon wafer is moved to the standard position.
After the silicon wafer 60 is fixed, the rotating shafts on all the supporting columns 43 are controlled to synchronously rotate in the same direction, so that all the rotating heads 42 synchronously and in the same direction provide a driving force for the silicon wafer 60 to rotate, and the silicon wafer 60 is driven to horizontally rotate. And simultaneously controlling the eight spray pipes 51 to spray hydrofluoric acid liquid medicine and ozone water liquid medicine on the surfaces of the two sides of the silicon wafer 60, wherein the concentration of the hydrofluoric acid liquid medicine is 0.5-2%, and the concentration of the ozone water liquid medicine is 15-25mg/L.
The acid cleaning of the silicon wafer 60 is performed to remove the remaining mixture of ammonia water, hydrogen peroxide and water on both sides of the silicon wafer 60 and simultaneously oxidize both side surfaces of the silicon wafer 60 to form an oxide film to protect the surface of the silicon wafer 60.
After the liquid medicine is cleaned, the surfaces of the two sides of the silicon wafer 60 need to be dried, nitrogen is introduced into the air pipe 25, the flow rate of the nitrogen is 0.5-2L/min, and when the nitrogen is introduced for 10-15s, the rotation of the silicon wafer 60 and the nitrogen are stopped. In the whole cleaning process, the silicon wafer 60 is always rotated, but the rotating speed of the silicon wafer 60 is 150-250rpm when the nitrogen is sprayed and is 40-60rpm greater than the rotating speed of the silicon wafer 60 when the silicon wafer is cleaned by liquid medicine, so that the liquid medicine on the surface of the silicon wafer 60 is quickly dried under high-speed rotation, and meanwhile, the nitrogen can quickly blow the liquid medicine on the surface of the silicon wafer 60.
The silicon wafer processing device and the processing technology are particularly suitable for polishing and cleaning procedures of large-size silicon wafers, the structural design is reasonable, the silicon wafers can be continuously polished and cleaned, and after processing, silicon wafer products with high flatness and high purification degree can be obtained; the thickness of a 12-inch silicon wafer can reach 775 +/-20 mm, the flatness (GBIT) of the back surface of the silicon wafer is less than or equal to 0.2 mu m, the total flatness (TIR) is less than or equal to 0.2 mu m, and the local flatness (SFQR) (26 x 33) is less than or equal to 20nm.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A silicon wafer processing apparatus is characterized by comprising:
the polishing unit at least comprises a rough polishing part and a fine polishing part, and the rough polishing part and the fine polishing part polish the single side of the silicon wafer and synchronously polish a plurality of groups of silicon wafers;
the cleaning unit is provided with a first-stage cleaning unit and a second-stage cleaning unit, wherein the first-stage cleaning unit and the second-stage cleaning unit clean the two sides of the silicon wafer, and single groups of silicon wafers are cleaned one by one;
a connecting bin is further arranged between the polishing unit and the cleaning unit, a wafer basket capable of bearing a plurality of silicon wafers is arranged in the connecting bin, and the wafer basket can move between the polishing unit and the cleaning unit in a reciprocating mode.
2. The silicon wafer processing device as claimed in claim 1, wherein the rough polishing part and the fine polishing part are provided with a polishing table and a polishing pad;
each polishing platform is provided with two polishing heads arranged side by side, and the lower end faces of the polishing heads are in adsorption connection with the silicon wafers;
all the polishing heads on each polishing table are symmetrically arranged along the diameter of the polishing table and synchronously rotate in the same direction;
and for the same silicon wafer, the same polishing head is adopted to control the same silicon wafer to carry out rough polishing and fine polishing in sequence.
3. The silicon wafer processing device as claimed in claim 2, wherein the polishing unit is configured with two of the fine polishing sections, and eight polishing heads are configured for one of the rough polishing section and two of the fine polishing sections, wherein two of the polishing heads are transfer stations;
each polishing table is also provided with a liquid spraying pipe; all the polishing tables are arranged on the same circumference; all the polishing heads move along the annular track.
4. The silicon wafer processing apparatus as claimed in claim 1, wherein the primary cleaning and the secondary cleaning each comprise:
the upper end face of the fixed platform is provided with a plurality of uniformly distributed tracks;
the rotary head is provided with an annular groove along the outer wall surface of the rotary head, and the groove is directly contacted with the edge of the silicon wafer;
the supporting column is fixed on the fixed table in a vertical arrangement, is connected with the track in a sliding manner, is internally provided with a rotating shaft, and is connected with the top of the rotating shaft;
driving all the supporting columns to drive the rotating head to move along the track through the rotating shaft, and synchronously moving towards one end close to the circle center of the fixed table to clamp the silicon wafer or synchronously moving towards one end far away from the circle center of the fixed table to loosen the silicon wafer;
and driving all the rotating shafts to drive the rotating heads to rotate so as to drive the silicon wafer to rotate.
5. The silicon wafer processing device as claimed in claim 4, wherein the extension ends of all the rails intersect at the center of the fixed table and are divergently arranged along the radial surface of the fixed table; the silicon wafer etching device comprises a silicon wafer, a plurality of spray pipes, a plurality of spray nozzles and a plurality of spray nozzles, wherein the spray pipes are symmetrically arranged on two sides of the silicon wafer, all the spray pipes are arranged at the edge of the silicon wafer, and spray heads of all the spray pipes are obliquely arranged towards one side of the center of the silicon wafer;
all the spray pipes on each side surface of the silicon wafer are symmetrically arranged relative to the diameter of the silicon wafer;
and all the spray pipes arranged on the two side surfaces of the silicon wafer are arranged at the same position.
6. The silicon wafer processing apparatus according to claim 5, wherein in the primary cleaning, brushes are provided on both side surfaces of the silicon wafer, are arranged in a single-side semicircle of the silicon wafer, and are capable of reciprocating in a diameter direction of the semicircle of the silicon wafer;
in the secondary cleaning, an air pipe for injecting air is arranged on each side surface of the silicon wafer, and the air pipe and the spray pipe are arranged side by side;
all the gas pipes on each side surface of the silicon wafer are symmetrically arranged relative to the diameter of the silicon wafer;
and all the air pipes arranged on the two side surfaces of the silicon chip are arranged at the same position.
7. A silicon wafer processing process, characterized by using the processing apparatus according to any one of claims 1 to 6, comprising the steps of:
controlling the silicon wafer to carry out rough polishing and fine polishing;
controlling the silicon wafer to be cleaned at least twice;
wherein, in the course of rough polishing and fine polishing, the front side of the silicon wafer is polished;
and in the cleaning process, cleaning the two sides of the silicon wafer.
8. The silicon wafer processing treatment process according to claim 7, wherein during the polishing process, the rough polishing solution contains silica abrasive grains with a concentration of 18-22% and an average particle size of 40-50nm;
the components of the fine polishing solution used for the two times of fine polishing are the same, the concentration of the silicon dioxide abrasive particles contained in the fine polishing solution is 8.7-10%, and the average particle size of the silicon dioxide is 30-38nm;
adding an active agent for a certain time in the course of rough polishing and fine polishing, wherein the time for adding the active agent is the same and is not less than 5s;
and carrying out pure water cleaning after each rough polishing and each fine polishing.
9. The silicon wafer processing treatment process according to claim 7 or 8, wherein in the primary cleaning process, the cleaning liquid is a mixed solution of ammonia water, hydrogen peroxide and water, and the two sides of the silicon wafer are brushed with a brush while spraying the liquid;
in the secondary cleaning process, the adopted cleaning liquid medicines are hydrofluoric acid liquid medicine and ozone water liquid medicine, and the hydrofluoric acid liquid medicine and the ozone water liquid medicine are independently sprayed.
10. The silicon wafer processing process according to claim 9, wherein in the primary cleaning, both sides of the silicon wafer are cleaned with pure water after the chemical cleaning, and the speed of rotation of the silicon wafer during the pure water cleaning is greater than the speed of rotation of the silicon wafer during the chemical cleaning;
in the secondary cleaning, spraying nitrogen to the two sides of the silicon wafer for drying after the liquid medicine cleaning, wherein the rotating speed of the silicon wafer is higher than that of the silicon wafer during the liquid medicine cleaning when the nitrogen is sprayed;
wherein the rotation speed of the silicon wafer during cleaning with the liquid medicine is 40-60rpm; the rotation speed of the silicon wafer during pure water cleaning and nitrogen gas spraying is 150-250rpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211246145.0A CN115472537A (en) | 2022-10-12 | 2022-10-12 | Silicon wafer processing device and processing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211246145.0A CN115472537A (en) | 2022-10-12 | 2022-10-12 | Silicon wafer processing device and processing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115472537A true CN115472537A (en) | 2022-12-13 |
Family
ID=84336081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211246145.0A Pending CN115472537A (en) | 2022-10-12 | 2022-10-12 | Silicon wafer processing device and processing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115472537A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117943365A (en) * | 2024-03-21 | 2024-04-30 | 通威微电子有限公司 | Brush sheet packaging integrated machine |
-
2022
- 2022-10-12 CN CN202211246145.0A patent/CN115472537A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117943365A (en) * | 2024-03-21 | 2024-04-30 | 通威微电子有限公司 | Brush sheet packaging integrated machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20230405762A1 (en) | Substrate processing apparatus | |
| US20200176281A1 (en) | Method of cleaning a substrate | |
| CN102810459B (en) | Method for cleaning wafer after chemical mechanical planarization | |
| JP3990073B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| KR102033791B1 (en) | Substrate cleaning method and substrate cleaning apparatus | |
| JP3979750B2 (en) | Substrate polishing equipment | |
| KR101796651B1 (en) | Disk-brush cleaner module with fluid jet | |
| CN104015109A (en) | Polishing apparatus and polishing method | |
| JP6054805B2 (en) | Substrate cleaning device | |
| CN115472537A (en) | Silicon wafer processing device and processing technology | |
| US6560809B1 (en) | Substrate cleaning apparatus | |
| US9799536B2 (en) | Apparatus and method for cleaning flat objects in a vertical orientation with pulsed liquid jet | |
| JP2001135604A5 (en) | Polishing apparatus and method | |
| CN101447415A (en) | Semiconductor silicon wafer cleaning device and cleaning method thereof | |
| CN117393457A (en) | Wafer cleaning device and method | |
| CN218498031U (en) | Silicon wafer processing device | |
| CN115502136A (en) | Silicon wafer cleaning device and cleaning process | |
| JP2006269974A (en) | Device and method for processing substrate | |
| CN112071782B (en) | Wafer back surface cleaning device, method and cleaning unit | |
| JP2017108113A (en) | Substrate processing apparatus, substrate processing method, and control program of substrate processing apparatus | |
| JP2000176386A (en) | Substrate cleaning apparatus | |
| JP2020184581A (en) | Substrate processing apparatus and substrate processing method | |
| CN110473808A (en) | A kind of wafer drying device | |
| CN218191339U (en) | Silicon wafer cleaning device | |
| CN201348988Y (en) | Semiconductor silicon wafer cleaner |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |