CN115467009B - Silicon-containing mixed anion nonlinear optical crystal and preparation method and application thereof - Google Patents
Silicon-containing mixed anion nonlinear optical crystal and preparation method and application thereof Download PDFInfo
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- CN115467009B CN115467009B CN202211248737.6A CN202211248737A CN115467009B CN 115467009 B CN115467009 B CN 115467009B CN 202211248737 A CN202211248737 A CN 202211248737A CN 115467009 B CN115467009 B CN 115467009B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 66
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 150000001450 anions Chemical class 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000000523 sample Substances 0.000 claims abstract description 11
- 229910004283 SiO 4 Inorganic materials 0.000 claims abstract description 8
- 230000010365 information processing Effects 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 10
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012612 commercial material Substances 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 238000001035 drying Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004321 preservation Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000002447 crystallographic data Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000001144 powder X-ray diffraction data Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a silicon-containing mixed anion nonlinear optical crystal, which has the chemical formula: ba (Ba) 5 Ga 2 SiO 4 S 6 Has excellent second-order nonlinear optical properties, i.e. can realize phase matching in the infrared band, has wide optical band gap (such as E g =4.03 eV), the powder frequency multiplication strength of which can reach the commercial material AgGaS 2 Is 0.65 times that of AgGaS, and has a laser damage threshold of AgGaS 2 The crystal is 17.5 times of that of the crystal, so that the balance of a large second-order frequency multiplication coefficient and a wide optical band gap is well realized, the preparation method is simple, and the crystal has important application value in the high-tech fields such as laser frequency conversion, near infrared probes, photorefractive information processing and the like, and is particularly used for infrared detectors and infrared lasers.
Description
Technical Field
The application relates to a silicon-containing mixed anion nonlinear optical crystal, a preparation method and application thereof, and belongs to the technical field of inorganic nonlinear optical materials.
Background
Second-order nonlinear optical (NLO) crystals are a very important functional material and have wide application in the fields of laser communication, optical information processing, integrated circuits, military technology and the like. In general, an ideal second order NLO crystal must meet the following conditions: (1) large second order multiplication coefficients; (2) a high laser damage threshold; (3) a suitably sized birefringence; (4) a broad optical transmission range; (5) good physicochemical and mechanical properties. The second-order nonlinear optical material can be classified into an inorganic nonlinear optical material, an organic nonlinear optical material, a polymer nonlinear optical material, and an organometallic complex nonlinear optical material according to its physicochemical properties. Most of the existing marketed second-order NLO crystals are inorganic nonlinear optical materials, and can be divided into three categories of ultraviolet light wave bands, visible light wave bands and infrared light wave bands according to different application wave bands. The second-order NLO crystal material in ultraviolet and visible light wave bands can meet the requirements of practical application.
The infrared second order NLO crystals currently commercialized are mainly chalcopyrite type materials, such as AgGaS 2 、AgGaSe 2 And ZnGeP 2 However, the range of practical applications of these materials is affected by a series of performance defects due to the low optical band gap. Excellent infrared second-order NLO crystal material is required to have large second-order frequency multiplication coefficient>0.5×AgGaS 2 ) And a wide optical bandgap (E g >3.5 eV). However, the second order frequency multiplication coefficient of a material has an inverse relationship to the optical bandgap. Therefore, how to realize the performance balance of the second order frequency multiplication coefficient and the wide optical band gap of the material becomes the difficulty and the hot spot for exploring the novel infrared second order NLO crystal material with excellent performance.
Disclosure of Invention
According to one aspect of the present application, there is provided a silicon-containing mixed anion nonlinear optical crystal having excellent second order nonlinear optical properties, capable of achieving phase matching in the infrared band, having a wide optical bandgap, higher than that of the commercial material AgGaS 2 The second-order frequency multiplication intensity and the laser damage threshold value of the laser can well realize the balance of large second-order frequency multiplication coefficient and wide optical band gap.
The application adopts the following technical scheme:
a silicon-containing mixed anion nonlinear optical crystal, the chemical formula is: ba (Ba) 5 Ga 2 SiO 4 S 6 。
Optionally, the structure of the optical crystal belongs to monoclinic system, the space group is Cc, and the unit cell parameter isα＝90°，β＝110～120°，γ＝90°。
Optionally, the unit cell parameters of the optical crystal are α＝90°，β＝115.847±1°，γ＝90°。
Optionally, the optical crystal has a zero-dimensional isolated cluster structure.
Alternatively, the zero-dimensional isolated cluster structure is composed of four coordinated [ SiO ] 4 ]And heteroleptic [ GaOS ] 3 ]As a basic asymmetric unit, it is formed by connecting common vertices to each other.
Alternatively, the alkaline earth metal element Ba in the optical crystal is dispersed and filled in discrete clusters and clusters as charge balance.
Optionally, the optical crystal achieves phase matching in the infrared band, has an optical band gap of 4.01-4.05 eV and an optical transmission range of 0.26-11.1 μm.
Optionally, the optical crystal has a frequency multiplication intensity of 190-200 mV under the incident laser with the wavelength of 2050 nm.
Optionally, the laser damage threshold intensity of the optical crystal under the incident laser with the wavelength of 1064nm is 47.7-50.3 MW/cm 2
According to another aspect of the present application, there is provided a method for preparing the above silicon-containing mixed anion nonlinear optical crystal, comprising the steps of:
mixing raw materials of BaS and Ga 2 S 3 、Ga 2 O 3 、SiO 2 Mixing, and then placing into a closed container for heating reaction to obtain the silicon-containing mixed anion nonlinear optical crystal.
Optionally, the Ga 2 S 3 The molar ratio of the catalyst to the BaS is 1:10-20;
Ga 2 S 3 with Ga 2 O 3 The molar ratio of (2) is 1:2-4;
Ga 2 S 3 with SiO 2 The molar ratio of (2) is 1:2-5.
Optionally, the Ga 2 S 3 The molar ratio to Bas is selected from any one of 1:10, 1:12, 1:14, 1:16, 1:18, 1:20, or a range value between any two.
Optionally, the Ga 2 S 3 With Ga 2 O 3 Is selected from the group consisting of 1:2, 1:2.5, 1:3, 1:3.5, 1:4, or a range value between any two of them.
Optionally, the Ga 2 S 3 With SiO 2 The molar ratio of (3) is selected from any one of 1:2, 1:2.5, 1:3, 1:3.5, 1:4, 1:4.5, 1:5, or a range value between any two.
Alternatively, the reaction conditions are: heating the raw materials to 600-1200 ℃, keeping the temperature for 50-300 h, cooling to 400-600 ℃ at a cooling rate of 1-10 ℃/h, and naturally cooling.
Optionally, the heat preservation temperature is 800-1100 ℃.
Optionally, the heat preservation time is 120-200 h.
Optionally, the heat preservation temperature is 1100 ℃, and the heat preservation time is 150h.
Optionally, the temperature is 1050 ℃, and the time is 100h.
Optionally, the cooling rate is 1-2 ℃/h.
Optionally, the temperature is reduced to 500 ℃.
Alternatively, the reaction is at 10 -4 ～10 -3 And (5) carrying out under Pa vacuum environment.
Optionally, the step further comprises the steps of washing and drying the silicon-containing mixed anion nonlinear optical crystal obtained by the reaction by water.
Optionally, the drying is drying by spraying ethanol onto the surface of the silicon-containing mixed anion nonlinear optical crystal to accelerate volatilization.
Optionally, the closed vessel comprises a quartz reaction tube.
According to another aspect of the application, the silicon-containing mixed anion nonlinear optical crystal and the silicon-containing mixed anion nonlinear optical crystal prepared by the preparation method are applied to infrared detectors, infrared lasers, photorefractive information processing, laser frequency conversion and near infrared probes.
The application has the beneficial effects that:
1) The silicon-containing mixed anion nonlinear optical crystal provided by the application has excellent second-order nonlinearitySexual optical properties, i.e. phase matching in the infrared band, with a wide optical bandgap (e.g. E g =4.03 eV), the powder frequency multiplication strength of which can reach the commercial material AgGaS 2 Is 0.65 times that of AgGaS, and has a laser damage threshold of AgGaS 2 The crystal is 17.5 times of that of the crystal, so that the balance of a large second-order frequency multiplication coefficient and a wide optical band gap is well realized, the preparation method is simple, and the crystal has important application value in the high-tech fields such as laser frequency conversion, near infrared probes, photorefractive information processing and the like, and is particularly used for infrared detectors and infrared lasers.
Drawings
FIG. 1 shows Ba obtained in example 1 of the present application 5 Ga 2 SiO 4 S 6 A schematic crystal structure;
FIG. 2 shows Ba obtained in example 1 of the present application 5 Ga 2 SiO 4 S 6 X-ray diffraction pattern of the crystal.
Detailed Description
The present application is described in detail below with reference to examples, but the present application is not limited to these examples.
Unless otherwise indicated, all starting materials in the examples of the present application were purchased commercially.
Example 1
Mixing BaS and Ga 2 S 3 、Ga 2 O 3 、SiO 2 And (3) fully and uniformly mixing according to the molar ratio of 15:1:2:3 to obtain the raw materials. Placing raw materials into a quartz crucible, placing the quartz crucible filled with raw materials into a quartz reaction tube, and vacuumizing to 10 -3 Pa and using oxyhydrogen flame to burn and melt the sealed quartz reaction tube. The quartz reaction tube was placed in a tube furnace with a temperature controller, heated to 1000 c and held for 150 hours. Then cooling to 500 ℃ at a speed of 3 ℃/hour, stopping heating, naturally cooling to room temperature, washing the product with deionized water and drying with ethanol to obtain the infrared nonlinear optical crystal Ba 5 Ga 2 SiO 4 S 6 And is designated sample 1.
Example 2
Mixing BaS and Ga 2 S 3 、Ga 2 O 3 、SiO 2 And (3) fully and uniformly mixing according to a molar ratio of 13:1:2:4 to obtain the raw materials. Placing raw materials into a quartz crucible, placing the quartz crucible filled with raw materials into a quartz reaction tube, and vacuumizing to 10 -3 Pa and using oxyhydrogen flame to burn and melt the sealed quartz reaction tube. The quartz reaction tube was placed in a tube furnace with a temperature controller, heated to 1050 ℃ and held for 120 hours. Then cooling to 500 ℃ at a speed of 3 ℃/hour, stopping heating, naturally cooling to room temperature, washing the product with deionized water and drying with ethanol to obtain the infrared nonlinear optical crystal Ba 5 Ga 2 SiO 4 S 6 And is designated sample 2.
Example 3
Mixing BaS and Ga 2 S 3 、Ga 2 O 3 、SiO 2 And (3) fully and uniformly mixing according to the molar ratio of 17:1:2:3.5 to obtain the raw materials. Placing raw materials into a quartz crucible, placing the quartz crucible filled with raw materials into a quartz reaction tube, and vacuumizing to 10 -3 Pa and using oxyhydrogen flame to burn and melt the sealed quartz reaction tube. The quartz reaction tube was placed in a tube furnace with a temperature controller, heated to 1050 ℃ and held for 120 hours. Then cooling to 500 ℃ at a speed of 3 ℃/hour, stopping heating, naturally cooling to room temperature, washing the product with deionized water and drying with ethanol to obtain the infrared nonlinear optical crystal Ba 5 Ga 2 SiO 4 S 6 And is designated sample 3.
Test example 1
The samples of examples 1 to 3 were subjected to X-ray single crystal diffraction test under the following conditions: the temperature 293K was measured on a single crystal diffractometer model samurn 724, mo target, ka radiation source (λ= 0.07107 nm). The samples were structurally resolved by Shellx-2014. The results of the crystallographic data of the samples are shown in table 1, and the schematic diagram of the crystal structure is shown in fig. 1.
TABLE 1
As shown in FIG. 1, the products of examples 1 to 3The crystal is composed of four coordinated [ SiO ] 4 ]And heteroleptic [ GaOS ] 3 ]As basic asymmetric units, formed by mutual connection of common vertexes, the alkaline earth metal element Ba is dispersed and filled in the discrete clusters and clusters as charge balance.
Sample 1 was subjected to X-ray powder diffraction phase analysis (XRD), test conditions: the reaction was performed on a MiniFlex II X-ray diffractometer from Rigaku, cu target, K.alpha.radiation source (λ= 0.154184 nm). The powder XRD pattern of the sample is fitted to the single crystal diffraction data to give an XRD pattern as shown in figure 2. As can be seen from fig. 2, the XRD pattern of the crystalline sample 1 prepared in example 1 is consistent with the XRD pattern obtained by fitting the single crystal diffraction data, which indicates that the sample obtained in example 1 has high crystallinity and purity.
TABLE 2
While the application has been described in terms of preferred embodiments, it will be understood by those skilled in the art that various changes and modifications can be made without departing from the scope of the application, and it is intended that the application is not limited to the specific embodiments disclosed.
Claims (10)
1. A silicon-containing mixed anion nonlinear optical crystal, characterized in that the silicon-containing mixed anion nonlinear optical crystal has a chemical formula: ba (Ba) 5 Ga 2 SiO 4 S 6 ；
The structure of the optical crystal belongs to monoclinic system, the space group is Cc, and the unit cell parameter isα＝90°，β＝110～120°，γ＝90°。
2. The silicon-containing mixed anion nonlinear optical crystal according to claim 1, wherein the optical crystal has a zero-dimensional isolated cluster structure;
the zero-dimensional isolated cluster structure is composed of four-coordinated [ SiO ] 4 ]And heteroleptic [ GaOS ] 3 ]As basic asymmetric units, formed by mutual connection of common vertexes;
the alkaline earth metal element Ba in the optical crystal is dispersedly filled in the clusters.
3. The silicon-containing mixed anion nonlinear optical crystal according to claim 1, wherein the optical crystal achieves phase matching in the infrared band, has an optical band gap of 4.01 to 4.05eV and an optical transmission range of 0.26 to 11.1 μm.
4. The silicon-containing mixed anion nonlinear optical crystal according to claim 1, wherein the optical crystal has a frequency multiplication intensity of 190 to 200mV at an incident laser light of 2050nm wavelength.
5. The silicon-containing mixed anion nonlinear optical crystal according to claim 1, wherein the optical crystal has a laser damage threshold intensity of 47.7-50.3 MW/cm at an incident laser of 1064nm wavelength 2 。
6. The method for producing a silicon-containing mixed anion nonlinear optical crystal according to any one of claims 1 to 5, comprising the steps of:
mixing BaS and Ga 2 S 3 、Ga 2 O 3 、SiO 2 Mixing, and then placing into a closed container for heating reaction to obtain the silicon-containing mixed anion nonlinear optical crystal.
7. The method according to claim 6, wherein the Ga 2 S 3 The molar ratio of the catalyst to the BaS is 1:10-20;
Ga 2 S 3 with Ga 2 O 3 Is of the mole of (2)The molar ratio is 1:2-4;
Ga 2 S 3 with SiO 2 The molar ratio of (2) is 1:2-5.
8. The method of claim 6, wherein the reaction is carried out at 10 -4 ～10 -3 And (5) carrying out under Pa vacuum environment.
9. The method according to claim 6, wherein the reaction conditions are: heating the raw materials to 600-1200 ℃, keeping the temperature for 50-300 h, cooling to 400-600 ℃ at a cooling rate of 1-10 ℃/h, and naturally cooling.
10. The use of the silicon-containing mixed anion nonlinear optical crystal according to any one of claims 1 to 5 and the silicon-containing mixed anion nonlinear optical crystal prepared by the preparation method according to any one of claims 6 to 9 in infrared detectors, infrared lasers, photorefractive information processing, laser frequency conversion and near infrared probes.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119969A (en) * | 2016-08-23 | 2016-11-16 | 中国科学院福建物质结构研究所 | Optical crystal AZn4ga5s12purposes as FTIR radiation transmittance |
| CN107022793A (en) * | 2016-02-02 | 2017-08-08 | 中国科学院福建物质结构研究所 | A kind of infrared nonlinear optical crystal, its preparation method and application |
| CN108441955A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical crystal, preparation method and purposes |
| CN109778317A (en) * | 2019-01-24 | 2019-05-21 | 中国科学院福建物质结构研究所 | A kind of crystalline material and the preparation method and application thereof of the non-heart sulfide of quaternary |
| CN111676517A (en) * | 2020-05-25 | 2020-09-18 | 中国科学院福建物质结构研究所 | Non-core mixed anion crystal material and preparation method and application thereof |
| US20210372006A1 (en) * | 2018-07-19 | 2021-12-02 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Nonlinear optical crystal, method for preparing the same and application thereof |
-
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- 2022-10-12 CN CN202211248737.6A patent/CN115467009B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107022793A (en) * | 2016-02-02 | 2017-08-08 | 中国科学院福建物质结构研究所 | A kind of infrared nonlinear optical crystal, its preparation method and application |
| CN106119969A (en) * | 2016-08-23 | 2016-11-16 | 中国科学院福建物质结构研究所 | Optical crystal AZn4ga5s12purposes as FTIR radiation transmittance |
| CN108441955A (en) * | 2018-04-23 | 2018-08-24 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical crystal, preparation method and purposes |
| US20210372006A1 (en) * | 2018-07-19 | 2021-12-02 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Nonlinear optical crystal, method for preparing the same and application thereof |
| CN109778317A (en) * | 2019-01-24 | 2019-05-21 | 中国科学院福建物质结构研究所 | A kind of crystalline material and the preparation method and application thereof of the non-heart sulfide of quaternary |
| CN111676517A (en) * | 2020-05-25 | 2020-09-18 | 中国科学院福建物质结构研究所 | Non-core mixed anion crystal material and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 新颖高效红外非线性光学化合物的探索研究;林华;《中国化学会第29届学术年会》;第1页 * |
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