CN115466894B - Gallium-based eutectic liquid alloy with low melting point and preparation method thereof - Google Patents
Gallium-based eutectic liquid alloy with low melting point and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a gallium-based eutectic liquid alloy with a low melting point and a preparation method thereof. The gallium-based eutectic liquid alloy is used for the production of a high-strength gallium-based eutectic liquid alloy,the composition comprises the following components in atomic fraction: (100-m)% (Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 ) +m% X; wherein X is selected from (1) Cd; (2) cd and Mg; any one of them; m=1 to 10; the melting point of the gallium-based eutectic liquid alloy is 6.3-6.9 ℃. The invention combines eutectic phase diagram to select additive elements on the basis of parent alloy and confirms the content of the elements to reduce the melting point of gallium-based liquid alloy, and the invention is characterized in that the Ga-based liquid alloy is a classical ternary eutectic alloy 77.2 In 14.4 Sn 8.4 On the basis of (at%), combining with a eutectic phase diagram theory to obtain the quaternary alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 (at%) and further obtaining a five-membered eutectic alloy and a six-membered eutectic alloy.
Description
Technical Field
The invention relates to the technical field of alloy materials, in particular to a gallium-based eutectic liquid alloy with a low melting point and a preparation method thereof.
Background
Room temperature liquid metal refers to metals and alloys thereof having a melting point at or near room temperature, which are liquid at room temperature, gallium-based liquid metals, particularly gallium and eutectic alloys thereof, which have low viscosity fluidity at room temperature (25 ℃) and excellent thermal and electrical conductivity, and which have been a subject of intense research in the fields of bionics, chemistry, biomedical, electrochemistry, and material science. More importantly, the gallium-based liquid alloy has the advantages of no toxicity, low vapor pressure at room temperature and capability of easily forming a functional oxide layer on the surface, so that the gallium-based liquid alloy has a huge application prospect in the fields of flexible and stretchable electronics, direct writing, 3D printing, catalysts, drivers, microfluidics, reconfigurable devices, chip cooling and the like.
Gallium-based liquid alloy plays an increasingly important role in practical application, along with the continuous deep research, the gallium-based liquid alloy is expected to bring about the fundamental revolution in academia and industry, but the types of liquid metal obtained under the premise of simultaneously considering cost, safety and functionality are very limited at present, most of researchers mainly concentrate on the development and application fields of liquid metal materials, the research on basic physical parameters of the liquid metal materials is very deficient, the melting point is taken as the basis for researching surface tension and phase balance, and the method is urgent for exploring the key physical parameters of liquid metal application and how to propose a method for scientifically and effectively designing a multi-element liquid metal alloy eutectic.
For gallium-based liquid metal and alloy thereof, more researches are made on binary eutectic alloy Ga 85.8 In 14.2 (at%) and ternary eutectic alloy Ga 77.2 In 14.4 Sn 8.4 While quaternary and higher alloys have been rarely studied due to complex composition, great difficulty in thermodynamic calculations, etc. Literature (A.V, parmuzina, and, et al Activity of aluminium metal to evolve hydrogen from water-science direct [ J)]International Journal of Hydrogen Energy,2008,33 (12): 3073-3076.) propose a quaternary alloy composition Ga 69.5 In 17.6 Sn 6.8 Zn 6.1 (at%), but the symmetry is not good by its DSC peak shape, which is not the eutectic ratio of the optimal quaternary alloy. Meanwhile, aiming at gallium-based multi-element alloys, most of people directly add elements with a certain percentage content on the basis of ternary alloys by a trial and error method to design multi-element alloys, and the multi-element alloys are disclosed in the literature (DoboszA, plevachukY, sklyarchuk V, et al liquid metals in cooling systems: experimental design of thermophysical properties of eutectic Ga-Sn-Zn alloy with Pb additions [ J ]]Journal ofMolecular Liquids,2019, 281:542-548.) in ternary eutectic alloys Ga 90.2 Sn 6.6 Zn 3.2 On the basis of the above, pb with the content of 0.09, 0.18, 0.35 and 0.71 (at%) is added integrally to design the multi-element alloy, and the mode can lead to high labor cost and experiment cost and poor effect.
Based on the existing literature and research results, the four-element and above gallium-based eutectic alloy has less research, most of the four-element and above gallium-based eutectic alloy adopts a trial-and-error method, so that the labor cost and the experiment cost are high, and the effect is poor.
Disclosure of Invention
The invention aims at the technical problemsThe gallium-based eutectic liquid alloy with low melting point and the preparation method thereof are provided, and on the basis of a master alloy, an additive element is selected by combining a eutectic phase diagram and the content of the element is confirmed so as to reduce the melting point of the gallium-based eutectic liquid alloy. The invention relates to a classical ternary eutectic alloy Ga 77.2 In 14.4 Sn 8.4 (at%) based on Ga combined 91.6 Zn 8.4 (at％)、In 96.2 Zn 3.8 (at％)、Sn 85.8 Zn 14.2 (at%) eutectic phase diagram theory to obtain quaternary alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 (at%) and further designing to obtain five-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 (at%) and six-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 (at％)。
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
in one aspect, the present invention provides a low melting point gallium-based eutectic liquid alloy comprising, in atomic fraction:
(100-m)％(Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 )+m％X；
wherein X is selected from (1) Cd; (2) cd and Mg; any one of them; m=1 to 10;
the melting point of the gallium-based eutectic liquid alloy is 6.3-6.9 ℃.
In the technical scheme of the invention, in the quaternary eutectic alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 On the basis of the above, the melting point of the gallium-based liquid alloy is reduced by introducing Cd element in combination with the eutectic phase diagram, and the melting point of the gallium-based liquid alloy is reduced by introducing Mg element in combination with the eutectic phase diagram on the basis of introducing Cd element.
As a preferred embodiment, the gallium-based eutectic liquid alloy comprises the following components in atomic fraction:
72.2 to 76.2 percent of gallium; 8.3 to 12.3 percent of indium; 3.8 to 5.8 percent of tin; 3.8 to 5.8 percent of zinc; 4.9 to 5.9 percent of cadmium; the melting point of the gallium-based eutectic liquid alloy is 6.66-6.86 ℃;
further preferred are: ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 。
As a preferred embodiment, the gallium-based eutectic liquid alloy comprises the following components in atomic fraction:
72.2 to 76.2 percent of gallium; 8.3 to 12.3 percent of indium; 3.8 to 5.8 percent of tin; 3.8 to 5.8 percent of zinc; 1.5 to 3 percent of cadmium; 1.5-3% of magnesium; the melting point of the gallium-based eutectic liquid alloy is 6.37-6.57 ℃;
further preferred are: ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 。
On the other hand, the invention provides a preparation method of the gallium-based eutectic liquid alloy, which comprises the following steps:
(1) Ultrasonically oscillating and drying the raw materials of each component of the liquid alloy in ethanol;
(2) Mixing the dried component raw materials in proportion, and heating under vacuum condition to completely melt;
(3) And (5) carrying out ultrasonic vibration until the melting sample is uniform.
In a preferred embodiment, the step (1) further includes a pretreatment for removing the oxide film on the surface of the alloy raw material.
In a preferred embodiment, in the step (2), the heating is heating by using an external flame of an alcohol burner.
In the step (3), the frequency of the ultrasonic vibration is 10-70 KHz, and more preferably 40KHz;
preferably, the power of the ultrasonic vibration is 10-150W, and more preferably 80W.
In a preferred embodiment, in the step (3), the temperature of the ultrasonic vibration is 70-90 ℃.
The technical scheme has the following advantages or beneficial effects:
the invention discloses a gallium-based eutectic liquid alloy with low melting point and a preparation method thereof, which are characterized in that the gallium-based eutectic liquid alloy is classical ternary eutectic alloy Ga 77.2 In 14.4 Sn 8.4 Based on (at%), the idea of eutectic atomic pair is adopted, based on Ga 91.6 Zn 8.4 (at％)、In 96.2 Zn 3.8 (at％)、Sn 85.8 Zn 14.2 (at%) binary eutectic phase diagram, introducing Zn element, designing and obtaining quaternary alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 (at%) and its melting point was 6.94 ℃. And on the basis of it, combines Ga 99.9 Cd 0.1 (at％)、In 74.3 Cd 25.7 (at％)、Sn 66.55 Cd 33.45 (at%) binary eutectic phase diagram, determining the content of Cd and its correspondent content, designing and obtaining five-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 (at%) and its melting point was 6.76 ℃. In five-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 (at%) based on reference to Mg 50 Cd 50 (at%) phase diagram, determining the content of Mg element added to obtain six-element eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 (at%) and its melting point was 6.47 ℃. The five-membered and six-membered eutectic alloy designed by the ratio of the eutectic atoms to the combined parent alloy is superior to the alloy designed by the conventional trial-and-error method described in the literature in terms of melting point, liquidus temperature, melting width and symmetry of melting peaks.
Drawings
FIG. 1 is a liquid alloy Ga in example 1 74.2 In 13.9 Sn 7.1 Zn 4.8 Is a DSC test result chart of (2);
FIG. 2 is a liquid alloy Ga in example 2 69.4 In 17.6 Sn 6.8 Zn 6.2 Is a DSC test result chart of (2);
FIG. 3 is a liquid alloy Ga in example 3 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 Is a DSC test result chart of (2);
FIG. 4 is a liquid alloy Ga in example 4 70.5 In 13.2 Sn 6.7 Zn 4.6 Cd 5 Is a DSC test result chart of (2);
FIG. 5 is a liquid alloy Ga in example 5 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 Is a DSC test result chart of (2);
FIG. 6 is a liquid alloy Ga in example 6 72 In 13.5 Sn 6.8 Zn 4.6 Cd 1.5 Mg 1.5 Is a DSC test result chart of (2);
FIG. 7 is a graph showing the comparison of DSC test results of the liquid alloy in examples 1 and 2;
FIG. 8 is a graph showing the comparison of DSC test results of the liquid alloy in examples 3 and 4;
FIG. 9 is a graph showing the comparison of DSC test results of the liquid alloy in examples 5 and 6;
FIG. 10 is a partially enlarged comparative view of the DSC heating portion of the liquid alloy in examples 1 to 6.
Detailed Description
The following examples are only some, but not all, of the examples of the invention. Accordingly, the detailed description of the embodiments of the invention provided below is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to fall within the scope of the present invention.
In the present invention, all the equipment, raw materials and the like are commercially available or commonly used in the industry unless otherwise specified. The methods in the following examples are conventional in the art unless otherwise specified.
The invention aims to provide a low-melting-point gallium-based eutectic liquid alloy and a preparation method thereof. The invention is based on eutectic phase diagram strategy, and is characterized in that the Ga-based ternary eutectic alloy is classical 77.2 In 14.4 Sn 8.4 Based on (at%), adopting eutectic atomic pair concept based on Ga in binary phase diagram 91.6 Zn 8.4 (at％)、In 96.2 Zn 3.8 (at％)、Sn 85.8 Zn 14.2 (at%) deep eutectic point, designing to obtain quaternary alloy component Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 (at%) with a melting point of 6.94℃and a liquidus temperature of 10.79℃and a melting width of 3.85 ℃. And literature (Parmuzina A, kravchenko O. Activity ofaluminium metal to evolve hydrogen from water [ J)]International Journal ofHydrogen Energy,2008,33 (12): 3073-3076) quaternary alloy Ga 69.4 In 17.6 Sn 6.8 Zn 6.2 The melting point was 7.05℃and the liquidus temperature was 13.90℃with a melting width of 6.85 ℃. Therefore, the quaternary eutectic alloy designed by the invention is superior to the quaternary eutectic alloy disclosed by the invention, the melting point is reduced by 0.11 ℃, the melting width is reduced by 3.00 ℃, and the quaternary eutectic alloy is more similar to the eutectic alloy.
The quaternary eutectic alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 Based on (a) and Ga is combined 99.9 Cd 0.1 (at％)、In 74.3 Cd 25.7 (at％)、Sn 66.55 Cd 33.45 And (at%) eutectic phase diagram, and determining the content of the added Cd element. In some embodiments, the liquid alloy comprises the following components: gallium 72.2 to 76.2%, preferably 74.2%, indium 8.3 to 12.3%, preferably 10.3%, tin 3.8 to 5.8%, preferably 4.8%, zinc 3.8 to 5.8%, preferably 4.8%, cadmium 4.9 to 5.9%, preferably 5.9%. In the invention, the five-membered eutectic alloy Ga formed by combining the eutectic phase diagram on the basis of the quaternary alloy 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 The melting point was 6.76 ℃, the liquidus temperature was 11.69 ℃, and the melting width was 4.93 ℃. And the five-membered alloy obtained by the conventional trial-and-error method is Ga 70.5 In 13.2 Sn 6.7 Zn 4.6 Cd 5 (at%) in quaternary eutectic alloy Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 On the basis of (a) 5% Cd was added thereto, the melting point thereof was 6.96 ℃, the liquidus temperature thereof was 13.21 ℃, and the melting width thereof was 6.25 ℃. Therefore, compared with the five-element alloy designed by the conventional trial-and-error method, the melting point of the five-element eutectic alloy designed by the invention is reduced by 0.20 ℃, the melting width is reduced by 1.32 ℃, and the five-element eutectic alloy is more similar to the eutectic alloy.
The five-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 On the basis of (at%), combine with Mg 50 Cd 50 (at%) phase diagram, the Mg element added and the content were determined. In some embodiments, the liquid alloy comprises the following components: gallium 72.2-76.2%, preferably 74.2%; 8.3 to 12.3 percent of indium, preferably 10.3 percent; tin 3.8-5.8%, preferably 4.8%; 3.8 to 5.8 percent of zinc, preferably 4.8 percent; cadmium 1.5-3%, preferably 2.95%; magnesium 1.5-3%, preferably 2.95%. In the invention, six-element eutectic alloy Ga formed by combining eutectic phase diagram on the basis of five-element alloy 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 (at%) with a melting point of 6.47℃and a liquidus temperature of 11.66℃and a melting width of 5.19 ℃. Six-element alloy Ga obtained by conventional trial-and-error method 72 In 13.5 Sn 6.8 Zn 4.6 Cd 1.5 Mg 1.5 (at%) having a melting point of 6.71℃and a liquidus temperature of 11.95℃and a melting width of 5.24 ℃. Compared with the conventional trial-and-error method, the melting point of the six-element eutectic alloy designed by the invention is reduced by 0.24 ℃, the melting width is reduced by 0.05 ℃, and the alloy is more similar to the eutectic alloy.
The preparation method of the liquid alloy in the following embodiment comprises the following steps:
(1) Taking out raw materials of each component required for preparing the liquid alloy, polishing with 1000-mesh sand paper to remove an oxide film, respectively placing polished samples into small sample bags with absolute ethyl alcohol, sealing the sample bags, and then placing the sample bags into an ultrasonic cleaner (JP-010S) for vibration cleaning;
(2) Drying the cleaned raw materials of each component, wiping with dust-free paper, weighing samples of each element strictly according to the required proportion by using a balance (Sidoris, BSA 124S-CW) with the precision of 0.0001g, and placing the total weight of 5g samples into a long test tube required for tube sealing;
(3) Vacuum-pumping with tube sealing machine (Partulab MRVS-1002) to make test tube air pressure lower than 1×10 -2 Pa, closing the air extraction valve, introducing high-purity argon, repeating the operation for three times to finish the gas washing treatment, and then burning the test tube through a hydrogen burning torch to finish the tube sealing treatment; heating with external flame of alcohol lamp to completely melt the sample, and placing test tubeIn an ultrasonic cleaner (JP-010S), setting the temperature to 70-90 ℃, opening an ultrasonic switch (the ultrasonic frequency is 40kHz, the ultrasonic power is 80W) for 0.5-1 hour until the melting sample in a reaction container is uniform, and obtaining the liquid alloy.
In the following examples, the method for testing the thermal signal of the liquid alloy is as follows: the finally prepared liquid alloy is transferred into a reagent bottle by a disposable sterile syringe, and a differential scanning calorimeter (TA-DSC 2500) is used for detecting thermal signals such as melting point, liquidus temperature and the like. The specific operation is as follows: sucking 9-11 mg of the sample into a clean copper crucible by using a disposable sterile syringe, wherein the mass of the sample is controlled by using a high-precision balance; placing the sample crucible and the empty crucible on a DSC test table, wherein the initial temperature is set to be 50 ℃ to eliminate heat history, preserving heat for 1min, reducing the temperature to-50 ℃ at the cooling rate of 5 ℃/min, preserving heat for 1min, and increasing the temperature to 20 ℃ at the heating rate of 5 ℃/min; after the test work is completed, thermal signals such as melting point, liquidus temperature and the like are obtained through Origin mapping analysis.
Example 1
In this embodiment the quaternary eutectic liquid alloy is Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 (at%) (atomic percent, gallium 74.2%, indium 13.9%, tin 7.7%, zinc 4.8%), the preparation method comprising the steps of:
(1) Taking out raw materials of each component required for preparing the liquid alloy, polishing with 1000-mesh sand paper to remove an oxide film, respectively placing polished samples into small sample bags with absolute ethyl alcohol, sealing the sample bags, and then placing the sample bags into an ultrasonic cleaner (JP-010S) for vibration cleaning;
(2) Drying the cleaned raw materials of each component, wiping with dust-free paper, weighing samples of each element strictly according to the required proportion by using a balance (Sidoris, BSA 124S-CW) with the precision of 0.0001g, and placing the total weight of 5g samples into a long test tube required for tube sealing;
(3) Vacuum-pumping with tube sealing machine (Partulab MRVS-1002) to make test tube air pressure lower than 1×10 -2 Pa, closing the air extraction valve, introducing high-purity argon, repeating the above operation for three times to complete the gas washing treatment, and then burning the test tube by a hydrogen burning torch to complete the tube sealing treatment. And heating by using an alcohol lamp external flame to completely melt a sample, placing the test tube in an ultrasonic cleaner (JP-010S), setting the temperature to 70-90 ℃, and opening an ultrasonic switch (the ultrasonic frequency is 40kHz, the ultrasonic power is 80W) for 0.5-1 hour until the melting of the sample in a reaction container is uniform, thus obtaining the liquid alloy.
As shown in FIG. 1, the melting point was 6.94℃and the liquidus temperature was 10.97℃and the melting width was 3.85℃as measured by DSC.
Example 2
The liquid alloy composition reference in this example (Parmuzina A, kravchenko O. Activate of aluminium metal to evolve hydrogen from water [ J)]International Journal of Hydrogen Energy,2008,33 (12): 3073-3076.) quaternary liquid alloy Ga 69.4 In 17.6 Sn 6.8 Zn 6.2 (atomic percent, gallium 69.4%, indium 17.6%, tin 6.8%, zinc 6.2%) and its preparation method is the same as example 1.
As shown in FIG. 2, the melting point was 7.05℃and the liquidus temperature was 13.90℃and the melting width was 6.85℃as measured by DSC.
Example 3
The liquid alloy in this embodiment is a five-membered eutectic liquid alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 (atomic percent, gallium 74.2%, indium 10.3%, tin 4.8%, zinc 4.8%, cadmium 5.9%) and its preparation method is the same as example 1.
As shown in FIG. 3, the melting point was 6.76℃and the liquidus temperature was 11.69℃and the melting width was 4.93℃as measured by DSC.
Example 4
In the embodiment, the five-membered liquid alloy Ga is obtained by adopting a conventional trial and error method 70.5 In 13.2 Sn 6.7 Zn 4.6 Cd 5 (atomic percent, 70.5% of gallium, 13.2% of indium, 6.7% of tin, 4.6% of zinc and 5% of cadmium) and the preparation method is the same as that of the example 1.
As shown in FIG. 4, the melting point was 6.96℃and the liquidus temperature was 13.21℃and the melting width was 6.25℃as measured by DSC.
Example 5
The liquid alloy in this embodiment is a six-membered eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 (atomic percent, gallium 74.2%, indium 10.3%, tin 4.8%, zinc 4.8%, cadmium 2.95%, magnesium 2.95%) and the method for preparing the same is the same as in example 1.
As shown in FIG. 5, the melting point was 6.47℃and the liquidus temperature was 11.66℃and the melting width was 5.19℃as measured by DSC.
Example 6
In this example, a conventional trial and error method is used to obtain a six-membered liquid alloy Ga 72 In 13.5 Sn 6.8 Zn 4.6 Cd 1.5 Mg 1.5 (atomic percent, gallium 72%, indium 13.5%, tin 6.8%, zinc 4.6%, cadmium 1.5%, magnesium 1.5%) and the preparation method is the same as in example 1. As shown in FIG. 6, the melting point was 6.71℃and the liquidus temperature was 11.95℃and the melting width was 5.24℃as measured by DSC.
In order to highlight that the invention has a larger breakthrough in the aspect of gallium-based multielement eutectic compared with the prior trial-and-error method, the invention also selects Ga 74.2 In 13.9 Sn 7.1 Zn 4.8 、Ga 69.4 In 17.6 Sn 6.8 Zn 6.2 、Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 、Ga 70.5 In 13.2 Sn 6.7 Zn 4.6 Cd 5 、Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 、Ga 72 In 13.5 Sn 6.8 Zn 4.6 Cd 1.5 Mg 1.5 Six alloys, for comparison, table 1 is a data statistic of thermal signals tested by TA-DSC 250:
TABLE 1 comparison of thermal signals of the invention and trial-and-error method in the exploration of gallium-based multi-eutectic
As can be seen from Table 1, the quaternary gallium-based eutectic alloy Ga designed by the invention 74.2 In 13.9 Sn 7.1 Zn 4.8 Compared with the quaternary alloy Ga in the literature 69.4 In 17.6 Sn 6.8 Zn 6.2 The melting point is reduced by 0.11 ℃, the liquidus temperature is reduced by 3.11 ℃, the melting width is narrower, the melting temperature is reduced by 3 ℃, and meanwhile, the peak shape is symmetrical and is more similar to a quaternary eutectic alloy when being combined with DSC. Meanwhile, in the aspect of multi-element eutectic alloy, the five-element gallium-based eutectic alloy Ga designed by the invention 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 And six-element gallium-based eutectic alloy Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 Compared with Ga designed by the traditional trial-and-error method 70.5 In 13.2 Sn 6.7 Zn 4.6 Cd 5 And Ga 72 In 13.5 Sn 6.8 Zn 4.6 Cd 1.5 Mg 1.5 The melting point is reduced by 0.2 ℃ and 0.24 ℃, the liquidus temperature is reduced by 1.53 ℃ and 0.29 ℃, the melting width is narrower, and the melting point is reduced by 1.32 ℃ and 0.05 ℃ respectively. Meanwhile, the peak shape is more symmetrical and is more similar to that of a five-element eutectic alloy and a six-element eutectic alloy by combining DSC.
The foregoing is only a preferred embodiment of the invention, it being noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (9)
1. A low-melting-point gallium-based eutectic liquid alloy is characterized in that the gallium-based eutectic liquid alloy is Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 5.9 Or Ga 74.2 In 10.3 Sn 4.8 Zn 4.8 Cd 2.95 Mg 2.95 。
2. A method of preparing a gallium-based eutectic liquid alloy according to claim 1, comprising the steps of:
(1) Ultrasonically oscillating and drying the raw materials of each component of the liquid alloy in ethanol;
(2) Mixing the dried component raw materials in proportion, and heating under vacuum condition to completely melt;
(3) And (5) carrying out ultrasonic vibration until the melting sample is uniform.
3. The method according to claim 2, wherein step (1) further comprises a pretreatment for removing an oxide film on the surface of the alloy raw material.
4. The method according to claim 2, wherein in the step (2), the heating is an alcohol burner flame heating.
5. The method according to claim 2, wherein in the step (3), the frequency of the ultrasonic vibration is 10-70 KHz.
6. The method according to claim 5, wherein in the step (3), the frequency of the ultrasonic vibration is 40KHz.
7. The method according to claim 2, wherein in the step (3), the power of the ultrasonic vibration is 10-150W.
8. The method according to claim 7, wherein in the step (3), the power of the ultrasonic vibration is 80W.
9. The method according to claim 2, wherein in the step (3), the temperature of the ultrasonic vibration is 70-90 ℃.
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| CN114131009A (en) * | 2021-11-19 | 2022-03-04 | 中国科学院宁波材料技术与工程研究所 | Liquid metal powder and preparation method thereof |
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