CN115458275A

CN115458275A - Inductor and preparation method thereof, and filter

Info

Publication number: CN115458275A
Application number: CN202211113792.4A
Authority: CN
Inventors: 曹雪; 冯昱霖; 李月; 肖月磊; 吴艺凡; 李慧颖; 安齐昌; 李必奇
Original assignee: BOE Technology Group Co Ltd; Beijing BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Beijing BOE Optoelectronics Technology Co Ltd
Priority date: 2022-09-14
Filing date: 2022-09-14
Publication date: 2022-12-09

Abstract

The disclosure provides an inductor, a preparation method thereof and a filter, and belongs to the technical field of passive devices. The inductance of this disclosure, it includes: a dielectric substrate having a connection via penetrating in a thickness direction thereof; the dielectric substrate comprises a first surface and a second surface which are oppositely arranged along the thickness direction of the dielectric substrate; a first conductive structure disposed on the first surface; the second conductive structure is arranged on the second surface, and the first conductive structure and the second conductive structure are electrically connected through a connecting electrode positioned in the connecting through hole to form a coil structure of the inductor; at least one of the first conductive structure and the second conductive structure is provided with a hollow pattern.

Description

Inductor and preparation method thereof, and filter

Technical Field

The disclosure belongs to the technical field of passive devices, and particularly relates to an inductor, a manufacturing method thereof and a filter.

Background

In the present day, the consumer electronics industry is developing day by day, mobile communication terminals represented by mobile phones, particularly 5G mobile phones, are developing rapidly, the frequency bands of signals to be processed by the mobile phones are increasing, the number of required radio frequency chips is also rising, and the mobile phone form enjoyed by consumers is developing continuously towards miniaturization, lightness and thinness and long endurance. In a traditional mobile phone, a large number of discrete devices such as resistors, capacitors, inductors, filters and the like exist on a radio frequency PCB, and the discrete devices have the defects of large volume, high power consumption, multiple welding spots and large parasitic parameter change, and are difficult to meet future requirements. The radio frequency chips are mutually interconnected, matched and the like, and the integrated passive device has the advantages of small required area, high performance and good consistency. The integrated passive devices currently on the market are mainly based on Si (silicon) substrates and GaAs (gallium arsenide) substrates. The Si-based integrated passive device has the advantage of low price, but the microwave loss of the device is high due to the fact that Si has trace impurities (poor insulation) and the performance is general; the GaAs-based integrated passive device has the advantage of excellent performance, but is expensive.

Disclosure of Invention

The invention aims to at least solve one of the technical problems in the prior art and provides an inductor, a preparation method thereof and a filter.

In a first aspect, an embodiment of the present disclosure provides an inductor, which includes:

a dielectric substrate having a connection via penetrating in a thickness direction thereof; the dielectric substrate comprises a first surface and a second surface which are oppositely arranged along the thickness direction of the dielectric substrate;

a first conductive structure disposed on the first surface;

the second conductive structure is arranged on the second surface, and the first conductive structure and the second conductive structure are electrically connected through a connecting electrode positioned in the connecting through hole to form a coil structure of the inductor; wherein the content of the first and second substances,

at least one of the first conductive structure and the second conductive structure is provided with a hollow pattern.

When the first conductive structure is provided with the hollowed-out pattern, the hollowed-out pattern comprises a first opening extending along the extending direction of the first conductive structure;

when the second conductive structure has the hollow pattern, the hollow pattern includes a second opening extending along an extending direction of the second conductive structure.

When the first conductive structure is provided with the hollow pattern, the first opening is provided with a first edge and a second edge which are oppositely arranged along the length direction of the first conductive structure; the orthographic projections of the first edge and the second edge on the plane of the first surface respectively fall on the outline of the orthographic projection of the two connecting through holes on the plane of the first surface;

when the second conductive structure is provided with the hollowed-out pattern, the second opening is provided with a third edge and a fourth edge which are oppositely arranged along the length direction of the second conductive structure; orthographic projections of the third edge and the fourth edge on the plane where the first surface is located respectively fall on the outline of the plane where the first surface is located and the outline of the two connecting through holes are located.

When the first conductive structure is provided with the hollow pattern, for one first conductive structure and the two connecting through holes covered with the first conductive structure, the orthographic projection of the first opening of the first conductive structure on the plane of the first surface is not overlapped with the orthographic projection of the two connecting through holes on the plane of the first surface;

when the second conductive structure is provided with the hollowed-out pattern, the hollowed-out pattern comprises a second opening extending along the extending direction of the second conductive structure; for one second conductive structure and the two connecting through holes covered by the second conductive structure, the orthographic projection of the second opening of the second conductive structure on the plane where the first surface is located is not overlapped with the orthographic projection of the two connecting through holes on the plane where the first surface is located.

When the first conductive structure is provided with the hollow pattern, the first opening comprises a fifth side and a sixth side which extend along the length direction of the first connection structure and are oppositely arranged; the fifth side and the sixth side are straight line sections or broken line sections;

when the second conductive structure is provided with the hollowed-out pattern, the second opening comprises a seventh side and an eighth side which extend along the length direction of the second connection structure and are oppositely arranged; the seventh side and the eighth side are straight line sections or broken line sections.

When the first conductive structure is provided with the hollow pattern, the center of the orthographic projection of the outer contour of the first conductive structure on the plane where the first surface is located is a first center, the center of the orthographic projection of the first opening on the plane where the first surface is located is a second center, and the first center is superposed with the second center;

when the second conductive structure is provided with the hollow pattern, the center of the orthographic projection of the outer contour of the second conductive structure on the plane where the first surface is located is a third center, the center of the orthographic projection of the first opening on the plane where the first surface is located is a fourth center, and the third center is coincided with the fourth center.

When the first conductive structure is provided with the hollow pattern, the hollow pattern comprises a plurality of first openings, the first openings extend along the length direction of the first conductive structure, and the first openings are arranged side by side in the width direction of the first conductive structure;

when the second conductive structure has the hollow pattern, the hollow pattern includes a plurality of the second openings, and the plurality of the second openings extend along the length direction of the second conductive structure, and the width direction of the second conductive structure is arranged side by side.

Wherein the film thickness of the first conductive structure and the film thickness of the second conductive structure are both larger than 1 μm.

When the first conductive structure has the hollow pattern, the width of the first opening is greater than 10 μm, and when the second conductive structure has the hollow pattern, the width of the second opening is greater than 10 μm.

In a second aspect, an embodiment of the present disclosure provides a method for manufacturing an inductor, including:

providing a dielectric substrate, wherein the dielectric substrate is provided with a connecting through hole penetrating along the thickness direction of the dielectric substrate; the dielectric substrate comprises a first surface and a second surface which are oppositely arranged along the thickness direction of the dielectric substrate;

a connecting electrode is formed in a connecting through hole of the dielectric substrate, a first conductive structure is formed on the first surface, a second conductive structure is formed on the second surface, and the first conductive structure and the second conductive structure are electrically connected through the connecting electrode in the connecting through hole to form a coil structure of the inductor; wherein, the first and the second end of the pipe are connected with each other,

the first conductive structure is formed to have a hollow pattern, and/or the second conductive structure is formed to have a hollow pattern.

The preparation method of the inductor further comprises the following steps: forming a first protective layer on one side of the first conductive structure, which is far away from the first surface; and forming a second protective layer on one side of the second conductive structure, which is far away from the second surface.

In a third aspect, an embodiment of the present disclosure provides a filter, which includes any one of the inductors described above.

Drawings

Fig. 1 is a schematic diagram of an exemplary inductor.

Fig. 2 is a cross-sectional view of an exemplary inductor.

Fig. 3 is a schematic diagram of an inductor according to an embodiment of the disclosure.

Fig. 4 is a parametric representation of the inductance principle of a first conductive structure of the inductor shown in fig. 1.

Fig. 5 is a parametric representation of the inductance principle of a first conductive structure of the inductor shown in fig. 2.

Fig. 6 is another schematic inductance diagram according to an embodiment of the disclosure.

Fig. 7 is another inductance schematic of an embodiment of the disclosure.

Fig. 8 is another inductance schematic of an embodiment of the present disclosure.

Fig. 9 is another inductance schematic of an embodiment of the disclosure.

Fig. 10 is a circuit diagram of a filter of an embodiment of the disclosure.

Detailed Description

In order to make the technical solutions of the present invention better understood, the present invention is further described in detail with reference to the accompanying drawings and the detailed description below.

Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

In a first aspect, an embodiment of the present disclosure provides an inductor, which is a three-dimensional inductor structure, and includes a dielectric substrate 10, a connection electrode, a first conductive structure 21, and a second conductive structure 22; the dielectric substrate 10 has a plurality of connecting vias 11 penetrating through the dielectric substrate in the thickness direction, and each connecting via 11 is filled with a connecting electrode. The dielectric substrate 10 includes a first surface (upper surface) and a second surface (lower surface) which are oppositely arranged along the thickness direction, the first conductive structure 21 is arranged on the first surface of the dielectric, the second conductive structure 22 is arranged on the second surface of the dielectric substrate 10, and at this time, the first conductive structure 21 is electrically connected with the second conductive structure 22 through a connection electrode positioned in the connection via hole 11, so as to form a coil structure of the inductor.

Specifically, referring to fig. 1 and 2, fig. 1 is a top view of an exemplary inductor; FIG. 2 is a cross-sectional view of an exemplary inductor; each first conductive structure 21 of the inductor extends along the first direction and is arranged side by side along the second direction; each second conductive structure 22 of the inductor extends along the third direction and is arranged side by side along the second direction. The connecting vias 11 on the dielectric substrate 10 are divided into two groups side by side along the first direction, and each group includes a plurality of connecting vias arranged side by side along the second direction. In the embodiment of the present disclosure, the first direction and the second direction are perpendicular to each other, and the first direction and the third direction are intersected and non-perpendicular to each other. Of course, the extending directions of the first conductive structure 21 and the second conductive structure 22 may be interchanged, and all of them are within the protection scope of the embodiments of the present disclosure. In addition, in the present embodiment, the inductor includes N first conductive structures 21 and N-1 second conductive structures 22 as an example, where N ≧ 2 and N are integers. The first end and the second end of the first conductive structure 21 are respectively at least partially overlapped with the orthographic projection of one connecting via 11 on the dielectric substrate 10. And the first end and the second end of one first conductive structure 21 correspond to different connecting vias 11, that is, the orthographic projection of one first conductive structure 21 and two connecting vias 11 on the dielectric substrate 10 at least partially overlaps. At this time, the first end of the ith second conductive structure 22 of the inductor is connected to the first end of the ith first conductive structure 21 and the second end of the (i + 1) th first conductive structure 21 through the connection electrode 11 in the connection via 11 to form an inductor coil, wherein i is greater than or equal to 1 and less than or equal to N-1, and i is an integer.

Referring to fig. 3, in the embodiment of the present disclosure, at least one of the first conductive structure 21 and the second conductive structure 22 has a hollow pattern. When the first conductive structure 21 has the hollow pattern, the stress of the first conductive pattern on the dielectric substrate 10 can be effectively reduced, and the risk of warping of the dielectric substrate 10 is reduced; similarly, when the second conductive structure 22 has a hollow pattern, the stress of the second conductive pattern on the dielectric substrate 10 can be effectively reduced, and the risk of warping of the dielectric substrate 10 can also be reduced.

In some examples, when the first conductive structure 21 has a hollow pattern, the hollow pattern has at least one first opening 210 extending along the length direction of the first conductive structure 21. In fig. 3, only one first opening 210 is provided on the first conductive structure 21 as an example. In this case, any one of the first conductive structures 21 is equivalent to a plurality of first sub-structures connected in parallel, and the inductance between the first sub-structures of the first conductive structure 21 and the inductance of the first sub-structure of the first conductive structure 21 adjacently disposed are increased, so that the inductance value of the inductance is increased, and the inductance density is improved. Similarly, when the second conductive structure 22 has a hollow pattern, the hollow pattern has at least one second opening 220 extending along the length direction of the second conductive structure 22. In fig. 6, only one second opening 220 is provided on the second conductive structure 22 for example. In this case, any one of the second conductive structures 22 is equivalent to a plurality of second substructures connected in parallel, and the inductance between the second substructures of the second conductive structures 22 and the inductance of the second substructure of the second conductive structure 22 adjacently disposed are increased, so that the inductance value of the inductance is increased, and the inductance density is improved.

The following is a description of a specific principle of increasing the inductance value of the inductor using the above-described structure. The inductance of the first conductive structure 21 is used for explanation, wherein the first conductive structure 21 has a hollow pattern, the hollow pattern is a first opening 210 extending along the length direction of the first conductive structure 21, and the number of the first openings 210 is one, at this time, each first conductive structure 21 is divided into two parallel first sub-structures by the first opening 210.

The inductance of any first conductive structure 21 comprises three parts, namely self-inductance, homodromous mutual inductance between adjacent first conductive structures 21 and heterodromous mutual inductance between second conductive structures 22 arranged opposite to the first conductive structures, wherein the inductance value of the self-inductance of the first conductive structures 21 can be evaluated by formula 1, and the self-inductance is larger when the width is reduced in unit length in relation to the length and width of the first conductive structures 21; the inductance value of the mutual inductance can be evaluated by formula 2, and is related to the length of the first conductive structure 21 and the center distance of the first conductive structure 21, and the smaller the trace pitch is, the larger the mutual inductance is per unit length. In the calculation of the total inductance, the same-direction mutual inductance is added into the self-inductance, and the reverse mutual inductance is subtracted from the self-inductance.

The total inductance of the wiring = self-inductance + homodromous mutual inductance-heterodromous mutual inductance.

As shown in fig. 4, the inductance L = La + Mab-Mac of the first conductive structure 21a, la is the self-inductance of a of the first conductive structure 21, mab is the mutual inductance between the first conductive structure 21a and the second conductive structure 22b, and Mac is the mutual inductance between the first conductive structure 21a and the first conductive structure 21 c.

Referring to fig. 5, for the first sub-structure a1 of the first conductive structure 21, the mutual inductance in the same direction is increased from Mab to Ma1a2+ Ma1b1+ Ma1b2, and because the first sub-structure a1 and the first sub-structure a2, the center distance between the first sub-structure a1 and the first sub-structure b1 is less than the center distance between the first conductive structure 21a and the first conductive structure 21b in the conventional inductive structure, the inductance of a1 is greatly increased. Of course, the inductance of the first substructure a1 and the inductance of the first substructure a2 are connected in parallel to reduce the total inductance, but the inductance of the inductance is improved as a whole. Taking the first sub-structure with a line width of 80 μm, the width of the first opening 210 on the first conductive structure 21 is 20 μm, and the line length of the first conductive structure 21 is 200 μm as an example, calculating that the inductance of the first conductive structure 21 in the inductance structure shown in fig. 3 is about 0.1nH, and the inductance of the first conductive structure 21 in the inductance structure shown in fig. 5 is about 0.12nH, the inductance is improved by 20%, and the inductance improvement range is different with the difference of the hollow size.

In the embodiment of the present disclosure, the hollow pattern may be disposed only on the first conductive structure 21, that is, the first conductive structure 21 has a first opening 210, and the first opening 210 extends along the length direction of the first conductive structure 21; as shown in fig. 6, a hollow pattern may be disposed only on the second conductive structure 22, that is, the second conductive structure 22 has a second opening 220, and the second opening 220 extends along the length direction of the second conductive structure 22; of course, as shown in fig. 7, it is also possible to design the first conductive structure 21 as the first conductive structure 21 having the first opening 210 and the second conductive structure 22 as the second conductive structure 22 having the second opening 220 at the same time.

In some examples, when the first conductive structure 21 has a hollow pattern, an orthogonal projection of the first opening 210 on the first surface of the dielectric substrate 10 has a first side and a second side that are oppositely disposed along a length direction of the first conductive structure 21. The orthographic projections of the first edge and the second edge on the plane of the first surface respectively fall on the outline of the orthographic projection of the two connecting through holes 11 on the plane of the first surface. Similarly, when the second conductive structure 22 has a hollow pattern, the second opening 220 has a third side and a fourth side opposite to each other along the length direction of the second conductive structure 22; the orthographic projections of the third edge and the fourth edge on the plane where the first surface is located respectively fall on the outline of the plane where the first surface is located and the outline of the two connecting through holes 11.

In some examples, referring to fig. 8, considering the characteristics of the current portion in the connection via 11, the current is generally concentrated in the connection direction of the connection via 11 and the first conductive structure 21/the second conductive structure 22, so when the first opening 210 is disposed on the first conductive structure 21, the first opening 210 should be located away from the connection via 11 where the connection electrode connected thereto is located, that is, a certain distance from the connection via 11, that is, for one first conductive structure 21 and two connection vias 11 covered therewith, an orthographic projection of the first opening 210 of the first conductive structure 21 on the plane of the first surface does not overlap with an orthographic projection of the two connection vias 11 on the plane of the first surface. Similarly, when the second opening 220 is disposed on the second conductive structure 22, the position of the second opening 220 should avoid the connection via 11 where the connection electrode connected to the second opening is located, that is, a certain distance is provided between the second opening and the connection via 11, that is, for one second conductive structure 22 and two connection vias 11 covered by the second conductive structure 22, the orthographic projection of the second opening 220 of the second conductive structure 22 on the plane where the first surface is located does not overlap the orthographic projection of the two connection vias 11 on the plane where the first surface is located.

In some examples, when the number of the first openings 210 on the first conductive structure 21 is one, the center of the orthographic projection of the outer contour of the first conductive structure 21 on the plane of the first surface is a first center, the center of the orthographic projection of the first opening 210 on the plane of the first surface is a second center, and the first center and the second center are coincident. In this way, the inductance value of each first conductive structure 21 is made uniform. Similarly, when the number of the second openings 220 on the second conductive structure 22 is one, the center of the orthographic projection of the outer contour of the second conductive structure 22 on the plane of the first surface is a third center, the center of the orthographic projection of the first opening 210 on the plane of the first surface is a fourth center, and the third center and the fourth center are overlapped. In this way, the inductance value of each second conductive structure 22 is made uniform.

In some examples, when the first conductive structure 21 has the hollow pattern, the number of the first openings 210 included in the hollow pattern may be multiple, and the multiple first openings 210 all extend along the length direction of the first conductive structure 21 and are uniformly arranged side by side. When the number of the first openings 210 is 2, the first conductive structure 21 is divided into 3 parallel first substructures; when the number of the first openings 210 is 3, the first conductive structure 21 is divided into 4 parallel first sub-structures; when the number of the first openings 210 is 4, the first conductive structure 21 is divided into 5 parallel first sub-structures. Similarly, when the second conductive structure 22 has the hollow pattern, the number of the second openings 220 included in the hollow pattern may be plural, and the plural second openings 220 extend along the length direction of the second conductive structure 22 and are uniformly arranged side by side. When the number of the second openings 220 is 2, the second conductive structure 22 is divided into 3 second sub-structures connected in parallel; when the number of the second openings 220 is 3, the second conductive structure 22 is divided into 4 second sub-structures connected in parallel; when the number of the second openings 220 is 4, the second conductive structure 22 is divided into 5 parallel second sub-structures.

In some examples, the film thickness of each of the first conductive structure 21 and the second conductive structure 22 is greater than 1 μm. When the first conductive structure 21 has the first opening 210, the width of the first opening 210 is greater than 10 μm, and when the second conductive structure 22 has the second opening 220, the width of the second opening 220 is greater than 10 μm. It should be noted that the widths of the first opening 210 and the second opening 220 are related to the period of the connection via 11, and the period of the connection via 11 is about 100 μm in the embodiment of the present disclosure. The period of the connection via 11 refers to the center distance between two connection vias 11 along the width direction of the first conductive structure 21.

In some examples, when the first conductive structure 21 has the first opening 210, when the first conductive structure 21 has the hollow pattern, the first opening 210 includes a fifth side and a sixth side extending along the length direction of the first connection structure and disposed oppositely; the fifth side and the sixth side are straight line segments, as shown in FIG. 3; or the fifth side and the sixth side are broken line segments, as shown in fig. 9. Similarly, when the second conductive structure 22 has a hollow pattern, the second opening 220 includes a seventh side and an eighth side extending along the length direction of the second connection structure and disposed oppositely; the seventh side and the eighth side are straight line segments or broken line segments. It should be noted that, in the embodiment of the present disclosure, specific patterns of the fifth side and the sixth side of the first opening 210 are not limited, and similarly, specific patterns of the seventh side and the eighth side of the second opening 220 are not limited.

In a second aspect, embodiments of the present disclosure provide a method for manufacturing an inductor, which may be used to manufacture any one of the inductor structures described above. The preparation method of the inductor comprises the following steps:

providing a dielectric substrate 10; the dielectric substrate 10 has a connection via 11 penetrating in a thickness direction thereof; the dielectric substrate 10 includes a first surface and a second surface oppositely disposed in a thickness direction thereof.

And forming a connecting electrode in the connecting via hole 11 of the dielectric substrate 10, forming a first conductive structure 21 on the first surface, forming a second conductive structure 22 on the second surface, and electrically connecting the first conductive structure 21 with the second conductive structure 22 through the connecting electrode in the connecting via hole 11 to form a coil structure of an inductor.

At least one of the first conductive structure 21 and the second conductive structure 22 formed in the embodiment of the present disclosure has a hollow pattern. When the first conductive structure 21 has the hollow pattern, the stress of the first conductive pattern on the dielectric substrate 10 can be effectively reduced, and the risk of warping the dielectric substrate 10 is reduced; similarly, when the second conductive structure 22 has a hollow pattern, the stress of the second conductive pattern on the dielectric substrate 10 can be effectively reduced, and the risk of warping of the dielectric substrate 10 can also be reduced.

In order to make the method of manufacturing the inductor more clear in the embodiments of the present disclosure, the following description is made with reference to specific examples. The preparation method of the inductor comprises the following steps:

s11, providing a dielectric substrate 10; the dielectric substrate 10 includes a first surface and a second surface oppositely disposed in a thickness direction thereof.

The dielectric substrate 10 includes, but is not limited to, a glass substrate.

And S12, forming a connecting through hole 11 penetrating through the dielectric substrate 10 along the thickness of the dielectric substrate 10.

In some examples, dielectric substrate 1010 may be post-via-last/connect via 1111 fabricated using a variety of methods. For example: sand blasting, photosensitive glass, focused discharge, plasma etching, laser ablation, electrochemical, laser induced etching, etc. Different methods have different advantages and disadvantages and application ranges. For example, the sandblasting method has the advantages of simple process, and the connection via 11 manufactured in this way has a large aperture and is only suitable for manufacturing the connection via 11 with the aperture larger than 200 μm. The photosensitive glass method has the advantages of simple process and capability of manufacturing the connecting through holes 11 with high density and high depth-to-width ratio. The advantage of the focused discharge method is the fast pore-forming speed. The roughness of the side wall of the connecting via hole 11 prepared by the plasma etching method is small. The laser ablation method has the advantages that the connection through hole 11 with high density and high aspect ratio can be manufactured, and the roughness is high. The electrochemical method has the advantages of low cost, simple equipment, high pore-forming speed and larger diameter of the connecting through hole 11. The laser-induced etching method has the advantages of high hole forming speed, capability of manufacturing the connecting through hole 11 with high density and high depth-to-width ratio, no damage to the inside of the through hole and expensive laser equipment. Taking laser-induced etching as an example, the back side of the substrate is subjected to back through hole by using a laser-induced etching method. Firstly, laser is used for carrying out laser induced modification on the position where the connecting through hole 11 needs to be manufactured, and then a wet etching method is used for manufacturing the through hole. The back through hole can only be manufactured by adopting a single-side etching method, so that the obtained hole can only be an inverted conical hole, and for the laser-induced etching punching method, the inverted conical hole etched on the single side is a typical characteristic of the back through hole connected with the back of the through hole 11.

And S13, forming a connecting electrode in the connecting through hole 11, forming a first conductive structure 21 on the first surface, forming a second conductive structure 22 on the second surface, and electrically connecting the first conductive structure 21 with the second conductive structure 22 through the connecting electrode in the connecting through hole 11 to form a coil structure of an inductor. At least one of the first conductive structure 21 and the second conductive structure 22 is formed with a hollow pattern.

In some examples, in step S13, an auxiliary film layer is formed by a method including but not limited to magnetron sputtering, and then a first conductive film layer is continuously sputtered, the first conductive film layer is used as a seed layer, the first seed layer is electroplated, and after the electroplating is completed, the excess electroplated copper on the first surface and the second surface is removed by using a Chemical Mechanical Polishing (CMP) method, so as to form a connection electrode filling the connection via 11. Next, the first conductive structure 21 and the second conductive structure 22 formed as the first surface through the patterning process. The first conductive structure 21 and the second conductive structure 22 are formed by, but not limited to, forming a metal conductive layer through magnetron sputtering, electroplating, printing, and the like, and then forming through a patterning process.

The above is a connection electrode formed by a subtractive method, but it is needless to say that a connection electrode may be formed by an additive method.

The auxiliary film layer is used for increasing the adhesive force of the first conductive film layer. The material of the auxiliary film layer includes, but is not limited to, titanium (Ti), and the material of the first conductive film layer includes, but is not limited to, cu. The thickness of the auxiliary film layer is about 10 nm-300 nm, and the thickness of the first conductive film layer is about 30 nm-100 nm.

In some examples, the manufacturing method of the embodiment of the present disclosure may further include forming a first protective layer on a side of the first conductive structure 21 facing away from the dielectric substrate 10 after forming the first conductive structure 21, and forming a second protective layer on a side of the second conductive structure 22 facing away from the dielectric substrate 10 after forming the second conductive structure 22.

The first protective layer is used for preventing water and oxygen from eroding the first surface of the dielectric substrate 10 to form a structure, and the second protective layer is used for preventing water and oxygen from eroding the second surface of the dielectric substrate 10 to form a structure. The first protective layer material may be an inorganic insulating material. For example: the first protective layer may be an inorganic insulating layer formed of silicon nitride (SiNx), or silicon oxide (SiO) ₂ ) Inorganic insulating layer formed, or SiNx inorganic insulating layer and SiO ₂ Several stacked composite layers of inorganic insulating layers. Of course, the material of the first protective layer may also be an organic material, an ABF material, or the like. The material of the second passivation layer can be the same as that of the first passivation layer, and therefore, the description thereof is omitted.

The description of the method of manufacturing the inductor of the embodiments of the present disclosure is thus completed.

In a third aspect, the disclosed embodiments provide a filter, which may include the inductor described above. The filter may also include capacitors and resistors.

FIG. 10 is a circuit diagram of a filter; as shown in fig. 10, the filter circuit includes two inductors, a capacitor and a resistor. For the sake of understanding, the two inductors are referred to as a first inductor L1 and a second inductor L2, respectively. With reference to fig. 2, the first lead terminal of the first inductor L1 is connected to the first terminal of the resistor R, the second lead terminal of the first inductor is connected to the second plate of the capacitor C, the first lead terminal of the second inductor L2 is connected to the first terminal of the resistor R, and the second lead terminal of the second inductor L2 is connected to the first plate of the capacitor C.

It should be noted that the resistor R may be implemented by a wire, and a high-resistance material, such as tin oxide (ITO) or nickel chromium (NiCr) alloy, may also be used as the resistor R. In the embodiment of the present disclosure, the formation of the resistor R is not limited, and the following description mainly describes capacitance and inductance.

The first plate of the capacitor in the filter may be disposed on the same layer as the first conductive structure 21 of the inductor, the second plate of the capacitor is disposed on a side of the first plate away from the dielectric substrate 10, and a dielectric layer is disposed between the first plate and the second plate of the capacitor.

Because the filter comprises the inductor, the inductance value of the filter is obviously improved, and the performance of the filter is obviously improved. It will be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. An inductor, comprising:

a first conductive structure disposed on the first surface;

2. The inductor according to claim 1, wherein when the first conductive structure has the hollow pattern, the hollow pattern includes a first opening extending along an extending direction of the first conductive structure;

3. The inductor according to claim 2, wherein when the first conductive structure has the hollow pattern, the first opening has a first side and a second side which are oppositely arranged along a length direction of the first conductive structure; the orthographic projections of the first edge and the second edge on the plane of the first surface respectively fall on the outline of the orthographic projection of the two connecting through holes on the plane of the first surface;

when the second conductive structure is provided with the hollow pattern, the second opening is provided with a third edge and a fourth edge which are oppositely arranged along the length direction of the second conductive structure; orthographic projections of the third edge and the fourth edge on the plane where the first surface is located respectively fall on the outline of the plane where the first surface is located and the outline of the two connecting through holes are located.

4. The inductor according to claim 2, wherein when the first conductive structure has the hollow pattern, for one first conductive structure and two connecting vias covered therewith, an orthographic projection of the first opening of the first conductive structure on a plane of the first surface is not overlapped with an orthographic projection of the two connecting vias on the plane of the first surface;

5. The inductor according to claim 2, wherein when the first conductive structure has the hollow pattern, the first opening includes a fifth side and a sixth side extending along a length direction of the first connection structure and disposed oppositely; the fifth side and the sixth side are straight line sections or broken line sections;

6. The inductor according to claim 2, wherein when the first conductive structure has the hollow pattern, a center of an orthographic projection of an outer contour of the first conductive structure on a plane of the first surface is a first center, a center of an orthographic projection of the first opening on the plane of the first surface is a second center, and the first center and the second center are coincident;

7. The inductor according to claim 2, wherein when the first conductive structure has the hollow pattern, the hollow pattern includes a plurality of first openings, the plurality of first openings extend along a length direction of the first conductive structure, and the first conductive structures are arranged side by side in a width direction of the first conductive structure;

when the second conductive structure has the hollow pattern, the hollow pattern includes a plurality of the second openings, and the plurality of the second openings extend along the length direction of the second conductive structure, and the width directions of the second conductive structures are arranged side by side.

8. An inductor according to any one of claims 1-7, wherein the film thickness of the first and second conductive structures are each greater than 1 μm.

9. The inductor according to any one of claims 1 to 7, wherein the width of the first opening is greater than 10 μm when the first conductive structure has the cutout pattern, and the width of the second opening is greater than 10 μm when the second conductive structure has the cutout pattern.

10. A method of making an inductor, comprising:

forming a connecting electrode in the connecting via hole of the dielectric substrate, forming a first conductive structure on the first surface, forming a second conductive structure on the second surface, and electrically connecting the first conductive structure and the second conductive structure through the connecting electrode in the connecting via hole to form a coil structure of the inductor; wherein, the first and the second end of the pipe are connected with each other,

11. The method for manufacturing an inductor according to claim 10, further comprising: forming a first protective layer on one side of the first conductive structure, which is far away from the first surface; and forming a second protective layer on one side of the second conductive structure, which is far away from the second surface.

12. A filter comprising an inductor according to any one of claims 1-9.