CN115455717A - Modeling method and system for neutron radiation effect of triode - Google Patents
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Abstract
The invention belongs to the technical field of modeling of a microelectronic device irradiation effect model, and discloses a modeling method and a system for a neutron radiation effect of a triode, wherein the modeling method comprises the following steps: selecting or designing an original device; obtaining model data of an original triode device; extracting an input V-I characteristic curve of a base electrode port and output V-I characteristic curves of a collector electrode port and an emitter electrode port; extracting base input impedance model parameters according to the base characteristic curve, and extracting triode output model parameters according to the output characteristic curve; obtaining basic device parameters such as current amplification coefficients of the triode by combining the input and output characteristic curve; establishing a triode device physical model according to the model parameters; according to the degradation of the electrical characteristics of the device caused by the neutron radiation effect, a neutron radiation effect model of the base electrode, the collector electrode and the emitter electrode of the triode device is established; the model established by the invention can reflect the basic device characteristics of the triode device and provide model support for system simulation under the irradiation condition.
Description
Technical Field
The invention belongs to the technical field of modeling of an electronic device irradiation effect model, and particularly relates to a method and a system for modeling a neutron radiation effect of a triode.
Background
At present, with the rapid development of semiconductor technology, various analog device models are widely applied to the fields of aerospace, nuclear industry, particle physics and the like, are in the radiation environment of various electromagnetic and high-energy particles and are influenced by various radiation effects such as neutron radiation, single-particle radiation, transient effect and the like, the working reliability and the life cycle of the simulation device models are seriously tested, and the neutron radiation effect is more widely concerned and researched.
In recent years, with the development of computer simulation technology, electronic system radiation effect simulation provides powerful support for radiation-resistant design and theoretical research of a system, and not only is the research and development period shortened, but also the development cost is reduced. At present, neutron radiation effect modeling studies (petrosysts K, vologdin E, smirnov D, et al. Si BJT and SiGe HBT performance modeling after neutron radiation exposure [ C ]// Design & Test symposium. IEEE, 2011) on device models mainly include two types of transistor-level model (SPICE model) studies based on underlying physics and functional behavior model studies. The transistor-level model has high simulation precision and wide application range, but the calculation cost is high, the simulation circuit scale is limited, and because the physical model relates to intellectual property information, a semiconductor manufacturer often does not want to provide a corresponding model or encrypt the model, and the semiconductor manufacturer is difficult to be used for modeling work of neutron radiation effect; the behavioral model does not relate to bottom physics, the model is simple, the universality is good, and the simulation efficiency is high, but the working point described by the model is fixed, and different power supply voltages correspond to different models, so that the characteristic of the chip when the power supply voltage is not a set value cannot be accurately described; when the neutron radiation effect of the device is modeled, one model can only describe the electrical characteristics of a specific neutron radiation point, and the problem of the electrical characteristics of the device under different conditions cannot be accurately and continuously represented.
In summary, the neutron radiation effect modeling method in the device model in the prior art can only represent the behavior characteristics of the digital device port, and cannot accurately and continuously represent the electrical characteristics of the device under different conditions.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a modeling method and a modeling system for a neutron radiation effect of a triode, which can reflect the behavior characteristics of a device, can represent the physical characteristics of a device port, can reflect the function degradation of the device caused by the influence of the neutron radiation effect on the device port, and can reflect the function degradation through the change of physical model parameters of the device port.
In order to achieve the purpose, the invention adopts the technical scheme that:
a modeling method for neutron radiation effect of a triode comprises the following steps:
step 1: selecting or designing a device as an original triode device;
step 2: measuring an original triode device by an instrument or downloading model data of the original triode device in a component official network;
and step 3: extracting an input port V-I characteristic curve and an output port V-I characteristic curve based on model data;
and 4, step 4: extracting working data of the triode in different working areas according to the input port V-I characteristic curve and the output port V-I characteristic curve;
and 5: calculating model parameters such as base input impedance, current amplification factor and the like according to input and output working data of the triodes in the amplification region;
step 6: establishing a triode physical model based on the original SPICE model of the triode according to the model parameters extracted by calculation;
and 7: acquiring a relation between triode parameters and irradiation parameters according to device parameter changes caused by neutron radiation effect, namely establishing a triode irradiation parameter model;
and 8: and establishing a triode neutron radiation effect model according to the degradation of the electrical characteristics of the device caused by the neutron radiation effect.
The steps 1 and 2 are used for acquiring basic model data of a certain determined device and preparing for subsequent modeling work; step 3, extracting a device characteristic curve to prepare for extracting model parameters; step 4, preparing for subsequently calculating the physical device parameters of the triode physical model and selecting the interval of the test data; step 5, acquiring physical parameters of the model, and preparing for constructing a physical model of the triode with physical characteristics; step 6, establishing a triode physical model, namely the triode model without the radiation effect parameters, so that the neutron radiation effect can be added conveniently; the step 7 is used for accurately extracting the change of the physical parameters of the triode caused by the irradiation effect and acquiring the change relation between the physical parameters of the triode and the irradiation parameters; and step 8 is used for considering the influence of the neutron radiation effect on the port impedance and other electrical characteristics of the triode on the basis of the triode physical model established in step 6 and the change relation between the triode physical parameters and the irradiation parameters acquired in step 7, and finally establishing a triode neutron radiation effect model.
In step 1 and step 2, the data collection of the original triode device includes: measuring various V-I and I-I data of an original triode device by adopting an SPICE simulation method or a method of directly measuring a real device; IV data represents a current-voltage relationship and comprises base input Ibe-Vbe data and collector Ice-Vce data; ibe-Ice data represents the amplification factor relationship of collector current and base current, including the working current and current amplification factor of different working regions.
In step 3, when an input V-I characteristic curve of the base input port is extracted based on the model, an NPN triode is adopted, vbe represents the voltage between the model base and the emitter, ibe represents the flowing current, and the lowest base conducting voltage of the triode and the conducted input impedance characteristic curve are obtained through calculation.
The step 4 comprises the following steps: selecting a plurality of reference points based on the obtained input port V-I characteristic curve and the output port V-I characteristic curve, drawing a normal triode working curve graph according to reference point data, and obtaining the ranges of Vce and Vbe of different working areas according to different variation trends and working states of Ic in the curve graph, wherein: the operating state of the saturation region shows that the Ic-Vce approximate linear relation, the operating state of the amplification region shows that Ib and Ic do not change along with the change of Vce, and the operating state of the cut-off region shows that Ib is 0 and Ic is almost 0.
The step 5 comprises the following steps: according to the data obtained in the step 4, the base input current and the collector supply voltage are adjusted to ensure that the triode is in an amplification region in a working state, and input and output data are tested when the triode works; then, according to the input port V-I characteristic curve, selecting a plurality of reference points on the input port V-I characteristic curve, and fitting the base current-voltage characteristic curve of the model equation by using least square fitting to obtain base input impedance parameters of a triode in the model equation;
according to data obtained by a triode working curve graph, base input current and collector supply voltage are adjusted, the working state of the triode is ensured to be in an amplification region, and input and output data during working of the triode are tested; and selecting a plurality of reference points for testing, and obtaining the current amplification coefficient in a normal state according to the collector current Ic and the base current Ib and a formula beta = Ic/Ib.
The step 6 comprises the following steps: according to the test fitting result, establishing an impedance transformation network model according to the solved base input impedance equation, and connecting the impedance transformation network model to the SPICE model input end; and modifying SPICE model parameters according to the current amplification coefficient parameters under the normal state measured in the previous step.
The step 7 comprises the following steps: and (3) according to the measured working data of the triode device model under different irradiation conditions, calculating device parameters of the triode device under different irradiation conditions by adopting the calculation method in the step 3-6 again, fitting by using a least square method, and constructing an irradiation dose-parameter change relation including input impedance, amplification zone current amplification coefficients and the like by combining with the irradiation dose fitting.
And establishing a neutron radiation effect model for the threshold voltage and the carrier mobility of the switching transistor at the output port of the original triode device, namely establishing the neutron radiation effect model at the output port of the triode digital IC.
The step 8 comprises the following steps: and introducing a neutron radiation parameter D into the neutron radiation effect model file of the triode, calculating the actual model parameter under the neutron radiation D according to the neutron radiation D transmitted into the model during simulation, and modifying the SPICE model parameter and the input impedance conversion model.
A modeling system of the triode neutron radiation effect applying the modeling method of the triode neutron radiation effect comprises the following steps:
the triode device acquisition module is used for selecting or designing a device as the original triode device;
the model data acquisition module is used for measuring the original triode device by an instrument or downloading model data of the original triode device in a component official network;
the characteristic curve extraction module is used for extracting an input VI characteristic curve of the base port and a VI characteristic curve of the output port based on model data;
the model parameter extraction module is used for extracting parameters such as working conditions of different working areas of the triode, base input impedance of the triode, current amplification coefficients and the like according to the input port V-I characteristic curve and the output port V-I characteristic curve;
the SPICE model correction module is used for establishing a triode physical model based on the original SPICE model according to the calculated model parameters;
the irradiation parameter equation building module is used for building a triode irradiation parameter model according to triode parameter change caused by neutron radiation effect;
and the neutron radiation effect model building module is used for building a triode neutron radiation effect model according to the electrical characteristic degradation of the device caused by the neutron radiation effect.
The invention has the beneficial effects that: because the invention adopts the modeling method of establishing the triode physical model based on the SPICE model and modifying the neutron radiation effect model according to the irradiation test result, the invention has the advantages of clear model principle and high modeling speed; meanwhile, the modeling method is a method for modeling the electrical characteristics of the analog device under the irradiation condition, and the built triode neutron radiation effect model can be directly used for simulation analysis of an electronic system under the irradiation condition; the invention improves the general SPICE model based on the model and the behavioral modeling method, and the built neutron radiation effect model of the triode can accurately reflect the simulation characteristics of the specific triode and provide model support for system simulation under the irradiation condition.
The invention can reflect the behavior characteristics of the device, can represent the physical characteristics of the device port, can degrade the function of the device according to the influence of the neutron radiation effect on the device port, and is reflected by the change of the physical model parameters of the device port.
Drawings
FIG. 1 is a flow chart of a modeling method for a neutron radiation effect in a triode according to an embodiment of the invention.
Fig. 2 is a block diagram of a modeling system for neutron radiation effect in a triode according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.
As shown in fig. 1, a modeling method for neutron radiation effect in a triode includes the following steps:
s101: selecting or designing a digital device as an original triode device;
s102: measuring the original triode device by an instrument or downloading model data of the original triode device in a component official network;
s103: extracting an input port V-I characteristic curve and an output port V-I characteristic curve based on model data;
s104: extracting working data of the triode in different working areas according to the input port V-I characteristic curve and the output port V-I characteristic curve;
s105: calculating parameters such as base input impedance, current amplification factor and the like according to input and output working data of the triode in the amplification region;
s106: establishing a modified triode physical model based on the original SPICE model of the triode according to the model parameters extracted by calculation;
s107: establishing a triode irradiation parameter model according to device parameter change caused by neutron radiation effect;
s108: and establishing a triode neutron radiation effect model according to the degradation of the electrical characteristics of the device caused by the neutron radiation effect.
As shown in fig. 2, a modeling system for a neutron radiation effect in a triode according to an embodiment of the present invention includes:
the triode device acquisition module is used for selecting or designing a device as the original triode device;
the model data acquisition module is used for measuring the original triode device by an instrument or downloading model data of the original triode device in a component official network;
the characteristic curve extraction module extracts a V-I characteristic curve of the input port and a V-I characteristic curve of the output port based on the model data;
the model parameter extraction module is used for extracting parameters such as working conditions of different working areas of the triode, base input impedance of the triode, current amplification coefficients and the like according to the input port V-I characteristic curve and the output port V-I characteristic curve;
the SPICE model correction module is used for establishing a triode physical model based on the original SPICE model according to the calculated model parameters;
the irradiation parameter equation building module is used for building a triode irradiation parameter model according to triode parameter change caused by neutron radiation effect;
and the neutron radiation effect model building module is used for building a triode neutron radiation effect model according to the electrical characteristic degradation of the device caused by the neutron radiation effect.
In the embodiment 1, the original triode device uses a triode 2N2222 as a testing and modeling device, in order to obtain the working data of the original triode device, a method of directly measuring the original triode device is adopted, I-V data and I-I data (the I-V data represents a current-voltage relation and comprises base input Ibe-Vbe data and collector Ice-Vce data) and the like are measured, and the data are recorded into a file.
Determining working data of different working regions of the 2N2222 triode according to the base current Ib, the collector current Ic and the collector-emitter voltage Vce; based on the parameters, selecting a plurality of reference points, drawing an input port V-I characteristic curve and an output port V-I characteristic curve of the triode in a normal state according to reference point data, and then carrying out parameter adjustment on a common triode SPICE model according to the content of a relation curve graph.
According to data obtained by a working curve diagram of the 2N2222 triode, base input current and collector supply voltage are adjusted to ensure that the working state of the triode is in an amplification region, and input and output data during working of the triode are tested; then, selecting a plurality of reference points on the base input characteristic curve according to the input port V-I characteristic curve and the output port V-I characteristic curve, and fitting the input port V-I characteristic curve to the model equation by using least square fitting to obtain the input impedance parameters of the triode in the model equation; and establishing an impedance transformation network model according to the input impedance equation, and connecting the impedance transformation network model to the SPICE model input end.
And adjusting the base input current and the collector supply voltage according to the data obtained by the triode working curve graph, ensuring that the working state of the triode is in an amplification region, and testing the input and output data of the triode during working. Selecting a plurality of reference points for testing, obtaining a current amplification coefficient in a normal state according to a collector current Ic and a base current Ib and a formula beta = Ic/Ib, and modifying SPICE model parameters.
Then, 2N2222 device working data under 3 total fluence points (1E 10, 3E12 and 1E 13) are measured, device parameters of the device under different irradiation conditions are calculated through a repeated calculation method, an irradiation dose-parameter change equation including input impedance, current amplification coefficients of an amplification area and the like is constructed by combining irradiation dose fitting, and least square fitting is also used.
And introducing a neutron radiation parameter D into the neutron radiation effect model file of the triode, calculating actual model parameters under the neutron radiation D according to the neutron radiation D transmitted into the model during simulation, and modifying SPICE model parameters and an input impedance conversion model.
Through test experiments, it can be known that the base current continuously decreases under the same base voltage along with the increase of the fluence, and the current amplification factor of the 2N2222 triode in the amplification region continuously increases. The measured data of the base voltage and the current under different dosages are shown in table 1, while the current amplification factor under different dosages is shown in table 2, with typical values being 227.5363,172.6369 and 123.2686 respectively. Then, the device built by the steps of the invention is simulated and compared with experimental data, the results are respectively shown in tables 3 and 4, the errors of the base current under different fluence are respectively 1.76%,0.02% and 4.62%, and the errors of the current amplification coefficient are respectively 0.11%,1.42% and 2.84%, and the neutron radiation effect of the triode device can be better reflected by the model as seen by comparing the simulation result with the real experimental result.
TABLE 1
TABLE 2
| Injection amount (n/cm) 2 ) | Current amplification factor |
| 1e10 | 227.5363 |
| 3e12 | 172.6369 |
| 1e13 | 123.2686 |
TABLE 3
| Fluence | Irradiation results (A) | Simulation result (A) | Relative deviation of |
| 1e10 | 744.4847e-9 | 757.5697e-9 | 1.76％ |
| 3e12 | 1.5414e-6 | 1.54165e-6 | 0.016％ |
| 1e13 | 4.2269e-6 | 4.03172e-6 | 4.62％ |
TABLE 4
| Fluence | Result of irradiation | Simulation result | Relative deviation of |
| 1e10 | 227.5363 | 227.77898 | 0.11％ |
| 3e12 | 172.6369 | 175.09488 | 1.42％ |
| 1e13 | 123.2686 | 126.7672 | 2.84％ |
The above description is only exemplary of the present invention, but the scope of the present invention is not limited thereto, and any modification, equivalent replacement, and improvement made by those skilled in the art within the technical scope of the present invention disclosed in the present invention should be covered within the scope of the present invention.
Claims (10)
1. A modeling method for a neutron radiation effect of a triode is characterized by comprising the following steps:
step 1: selecting or designing a digital device as an original triode device;
and 2, step: measuring an original triode device by an instrument or downloading model data of the original triode device in a component official network;
and step 3: extracting an input port V-I characteristic curve and an output port V-I characteristic curve of a base port based on model data;
and 4, step 4: extracting working conditions of the triode in different working areas according to the input port V-I characteristic curve and the output port V-I characteristic curve;
and 5: calculating model parameters of base input impedance and current amplification coefficient according to input and output working data of the triode in the amplification area;
and 6: establishing a triode physical model based on the original SPICE model of the triode according to the model parameters extracted by calculation;
and 7: acquiring a relation between triode parameters and irradiation parameters according to device parameter changes caused by neutron radiation effect, namely establishing a triode irradiation parameter model;
and 8: and establishing a triode neutron radiation effect model according to the degradation of the electrical characteristics of the device caused by the neutron radiation effect.
2. The method of claim 1, wherein: in step 1 and step 2, the data collection of the original triode device includes: measuring various V-I and I-I data of an original triode device by adopting an SPICE simulation method or a method for directly measuring a real device; IV data represents a current-voltage relation and comprises base input Ibe-Vbe data and collector Ice-Vce data; the Ibe-Ice data represents the amplification factor relationship between the collector current and the base current, including the working current and the current amplification factor of different working regions.
3. The method of claim 1, wherein: and 3, when the input V-I characteristic curve of the base input port is extracted based on the model in the step 3, adopting an NPN triode, wherein Vbe represents the voltage between the model base and the emitter, ibe represents the flowing current, and the lowest base conducting voltage of the triode and the conducted input impedance characteristic curve are obtained through calculation.
4. The method of claim 1, wherein step 4 comprises: selecting a plurality of reference points based on the obtained base input port V-I characteristic curve and output port V-I characteristic curve, drawing a normal triode working curve graph according to reference point data, and obtaining Vce and Vbe ranges of different working regions according to different change trends and working states of Ic in the curve graph, wherein: the operating state of the saturation region shows that the Ic-Vce approximate linear relation, the operating state of the amplification region shows that Ib and Ic do not change along with the change of Vce, and the operating state of the cut-off region shows that Ib is 0 and Ic is almost 0.
5. The method of claim 1, wherein: the step 5 comprises the following steps: according to data obtained by a triode working curve chart in a normal state, base input current and collector supply voltage are adjusted, the working state of the triode is ensured to be in an amplification region, and input and output data during working of the triode are tested; and then, selecting a plurality of reference points on the input port V-I characteristic curve according to the input port V-I characteristic curve, and fitting the base current-voltage characteristic curve of the model equation by using least square fitting to obtain base input impedance parameters of the triode in the model equation.
6. The method of claim 5, wherein: according to data obtained by a triode working curve graph, base input current and collector supply voltage are adjusted, the working state of the triode is ensured to be in an amplification region, and input and output data during working of the triode are tested; and selecting a plurality of reference points for testing, and obtaining the current amplification coefficient in a normal state according to the collector current Ic and the base current Ib and a formula beta = Ic/Ib.
7. The method of claim 1, wherein: the step 6 comprises the following steps: according to the test fitting result and the obtained base input impedance equation, establishing an impedance transformation network model and connecting the impedance transformation network model to the input end of the SPICE model; and modifying SPICE model parameters according to the current amplification coefficient parameters under the normal state measured in the previous step.
8. The method of claim 1, wherein: the step 7 comprises the following steps: calculating device parameters of the triode device under different irradiation conditions by adopting the calculation method in the step 3-6 again according to the measured working data of the triode device model under different irradiation conditions, similarly using least square fitting, and combining the irradiation dose fitting to construct an irradiation dose-parameter change equation comprising input impedance and current amplification coefficients of an amplification area;
and establishing a neutron radiation effect model for the threshold voltage and the carrier mobility of the switching transistor at the output port of the original triode device, namely establishing the neutron radiation effect model at the output port of the triode digital IC.
9. The method of claim 1, wherein: the step 8 comprises the following steps: and introducing a neutron radiation parameter D into the neutron radiation effect model file of the triode, calculating the actual model parameter under the neutron radiation D according to the neutron radiation D transmitted into the model during simulation, and modifying the SPICE model parameter and the input impedance conversion model.
10. A modeling system for a neutron radiation effect in a triode by using the modeling method for the neutron radiation effect in the triode of claims 1-9, comprising:
the triode device acquisition module is used for selecting or designing a device as the original triode device;
the model data acquisition module is used for measuring the original triode device by an instrument or downloading model data of the original triode device in a component official network;
the characteristic curve extraction module is used for extracting an input VI characteristic curve of the base port and a VI characteristic curve of the output port based on model data;
the model parameter extraction module is used for extracting parameters such as working conditions of different working areas of the triode, base input impedance of the triode, current amplification coefficients and the like according to the input port V-I characteristic curve and the output port V-I characteristic curve;
the SPICE model correction module is used for establishing a correction triode physical model based on an original SPICE model according to the calculated model parameters;
the irradiation parameter equation building module is used for building a triode irradiation parameter model according to the triode parameter change caused by the neutron radiation effect;
and the neutron radiation effect model building module is used for building a triode neutron radiation effect model according to the electrical characteristic degradation of the device caused by the neutron radiation effect.
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