CN115452710A - Magnetron sputtering binding force detection method, device, equipment and storage medium - Google Patents
Magnetron sputtering binding force detection method, device, equipment and storage medium Download PDFInfo
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- CN115452710A CN115452710A CN202211178502.4A CN202211178502A CN115452710A CN 115452710 A CN115452710 A CN 115452710A CN 202211178502 A CN202211178502 A CN 202211178502A CN 115452710 A CN115452710 A CN 115452710A
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 109
- 238000001514 detection method Methods 0.000 title claims abstract description 103
- 238000003860 storage Methods 0.000 title claims abstract description 16
- 238000012360 testing method Methods 0.000 claims abstract description 88
- 238000010008 shearing Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 238000004891 communication Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 70
- 229910052802 copper Inorganic materials 0.000 claims description 70
- 239000010949 copper Substances 0.000 claims description 70
- 230000001681 protective effect Effects 0.000 claims description 28
- 238000004364 calculation method Methods 0.000 claims description 24
- 230000000903 blocking effect Effects 0.000 claims description 17
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001174 ascending effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000006115 industrial coating Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N19/00—Investigating materials by mechanical methods
- G01N19/04—Measuring adhesive force between materials, e.g. of sealing tape, of coating
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Abstract
The invention discloses a magnetron sputtering binding force detection method, a device, equipment and a storage medium, wherein the magnetron sputtering binding force detection method is applied to main control equipment of the magnetron sputtering binding force detection device, the magnetron sputtering binding force detection device also comprises a push broach and an objective table, the main control equipment is in communication connection with the push broach and the objective table, and the detection method comprises the following steps: the method comprises the steps of controlling an objective table to move to a preset test position, controlling a push broach to move to a preset initial position along a Z axis so that the push broach is located right ahead of a piece to be tested, controlling the push broach to move to a preset detection position along the Z axis from the initial position, controlling the objective table to move along the direction of the push broach at a preset test speed so that the piece to be tested is in contact with the push broach, obtaining thrust force applied to the push broach when the push broach cuts the piece to be tested, obtaining shearing force, obtaining the contact area of the piece to be tested and the push broach, and calculating the thrust force according to the contact area and the shearing force to obtain target binding force. The invention can detect the binding force of the magnetron sputtering coating through a thrust test.
Description
Technical Field
The invention relates to the technical field of circuit board processes, in particular to a magnetron sputtering binding force detection method, a device, equipment and a storage medium.
Background
In the RDL product manufacturing industry, the bonding force of the magnetron sputtering coating directly determines the product reliability, and the detection of the bonding force of the magnetron sputtering coating is necessary, so how to detect the bonding force of the magnetron sputtering coating is a problem to be solved urgently at present.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a method for detecting the binding force of magnetron sputtering, which can detect the binding force of a magnetron sputtering coating film through a thrust test.
The invention also provides a device for detecting the magnetron sputtering binding force.
The invention also provides magnetron sputtering binding force detection equipment.
The invention also provides a computer readable storage medium.
In a first aspect, an embodiment of the present invention provides a magnetron sputtering bonding force detection method, which is applied to a main control device of a magnetron sputtering bonding force detection apparatus, where the magnetron sputtering bonding force detection apparatus further includes a push broach and an object stage, the main control device is in communication connection with the push broach and the object stage, and the detection method includes:
controlling the objective table to move to a preset test position; the object stage is provided with a substrate, and the substrate is provided with a piece to be detected;
controlling the push broach to move to a preset initial position along the Z axis so that the push broach is positioned right in front of the piece to be detected; wherein the initial position is above the substrate;
controlling the push broach to move from the initial position to a preset detection position along the Z axis;
controlling the objective table to move along the direction of the push broach at a preset test speed so as to enable the piece to be tested to be in contact with the push broach;
acquiring the thrust force borne by the push broach when the push broach shears the piece to be tested so as to obtain the shearing force;
and acquiring the contact area between the piece to be detected and the push broach, and performing thrust calculation according to the contact area and the shearing force to obtain the target binding force.
The magnetron sputtering binding force detection method provided by the embodiment of the invention at least has the following beneficial effects: the method comprises the steps of placing a substrate and a piece to be tested on an objective table, moving the substrate and the piece to be tested to a preset test position range by controlling the objective table to move, controlling a push broach to move along a Z axis, moving the push broach to an initial position preset above the substrate, enabling the push broach to be located right in front of the piece to be tested, controlling the push broach to move along the Z axis from the initial position, enabling the push broach to move to a preset test position and be fixed, controlling the objective table to move along the direction of the push broach at a preset test speed, enabling the piece to be tested to be in contact with the push broach, obtaining the thrust pushed by the piece to be tested in real time, setting the thrust currently received by the thrust to be a shear force when the push broach cuts the piece to be tested, obtaining the contact area of the piece to be tested and the push broach after the piece to be completely laminated, and carrying out thrust calculation according to the contact area and the shear force to obtain a target bonding force. The piece to be tested and the push broach are moved to the preset positions before testing, then the object stage is moved to enable the piece to be tested to be in contact with the push broach and then a thrust test is conducted, the thrust when the push broach shears the piece to be tested is obtained, the shearing force is obtained, the contact area of the piece to be tested and the push broach is obtained, the binding force of the magnetron sputtering coating is obtained through thrust calculation according to the contact area and the shearing force, and the binding force of the magnetron sputtering coating can be detected through the thrust test.
According to another embodiment of the invention, the magnetron sputtering bonding force detection method includes that the piece to be detected includes a protective film and a copper column to be detected, and before the stage is controlled to move to a preset test position, the method includes:
and executing a preset magnetron sputtering coating operation on the substrate according to preset copper column specification parameters so as to combine the copper column to be detected and the protective film to obtain the piece to be detected.
According to another embodiment of the present invention, the method for detecting a magnetron sputtering bonding force, where a predetermined magnetron sputtering coating operation is performed on the substrate according to a predetermined specification parameter of a copper pillar, so that the copper pillar to be tested and the protective film are bonded to obtain the piece to be tested, includes:
spin-coating the surface of the substrate to uniformly coat the surface of the substrate with gel, and drying the gel to solidify the gel to form a gel layer;
performing magnetron sputtering coating on the gel layer to coat the protective film on the gel layer;
attaching a copper cylinder film on the protective film according to the specification parameters of the copper cylinder, and performing electro-coppering according to the copper cylinder film to obtain the copper cylinder to be detected;
and removing the copper cylinder film, and etching the copper cylinder to be detected to obtain the piece to be detected.
According to another embodiment of the present invention, the method for detecting a magnetron sputtering bonding force, wherein the controlling the push broach to move from the initial position to a preset detection position along a Z axis includes:
controlling the push knife to move downwards along the Z axis from the initial position to contact the substrate;
and controlling the push broach to move upwards along the Z-axis direction by the preset test height so as to enable the push broach to move to the preset detection position.
According to another embodiment of the present invention, the method for detecting a magnetron sputtering bonding force, wherein the step of controlling the push broach to move upward along the Z axis by the preset test height so as to move the push broach to the preset detection position includes:
obtaining the acting force of the substrate for blocking the push broach to continuously descend to obtain the blocking force;
and if the blocking force is larger than a preset force value, controlling the push broach to move upwards along the Z-axis direction by the preset test height according to a preset rising speed so as to enable the push broach to move to the preset detection position.
According to the magnetron sputtering bonding force detection method of other embodiments of the present invention, before obtaining the thrust force that the push broach receives when the push broach shears the piece to be detected to obtain the shearing force, the method includes:
and if the piece to be tested is not cut off, increasing the testing speed according to a preset speed value until the piece to be tested is cut off.
According to the magnetron sputtering binding force detection method of other embodiments of the present invention, the obtaining a contact area between the to-be-detected piece and the push broach, and performing thrust calculation according to the contact area and the shearing force to obtain a target binding force includes:
measuring a contact area between the piece to be measured and the push broach according to a metallographic microscope to obtain an area parameter;
calculating the area according to the area parameter to obtain the contact area;
and substituting the contact area and the shearing force into a preset pressure calculation formula to calculate the thrust force to obtain the target binding force.
In a second aspect, an embodiment of the present invention provides a magnetron sputtering bonding force detection apparatus, including a main control device, a push broach and an object stage, where the main control device is in communication connection with the push broach and the object stage, and the magnetron sputtering bonding force detection apparatus further includes:
the test position moving module is used for controlling the objective table to move to a preset test position; the object stage is provided with a substrate, and the substrate is provided with a piece to be detected;
the initial position moving module is used for controlling the push broach to move to a preset initial position along the Z axis so as to enable the push broach to be positioned right in front of the piece to be detected; wherein the initial position is above the substrate;
the detection position moving module is used for controlling the push broach to move from the initial position to a preset detection position along the Z axis;
the moving test module is used for controlling the objective table to move along the direction of the push broach along the X axis at a preset test speed so as to enable the piece to be tested to be in contact with the push broach;
the shearing force acquisition module is used for acquiring the thrust force borne by the push broach when the push broach shears the piece to be tested so as to obtain the shearing force;
and the binding force calculation module is used for acquiring the contact area between the piece to be detected and the push broach, and performing thrust calculation according to the contact area and the shearing force to obtain the target binding force.
The magnetron sputtering binding force detection device provided by the embodiment of the invention at least has the following beneficial effects: the method comprises the steps that a substrate and a piece to be tested are placed on an objective table, a test position moving module controls the objective table to move the substrate and the piece to be tested to a range of a preset test position, an initial position moving module controls a push broach to move along a Z axis, the push broach moves to an initial position preset above the substrate, the push broach is located right ahead the piece to be tested, a detection position moving module controls the push broach to move along the Z axis from the initial position, the push broach moves to the preset test position and is fixed, the test position moving module controls the objective table to move along the direction of the push broach at a preset test speed, the piece to be tested is in contact with the push broach, a shearing force obtaining module obtains a pushing force pushed by the piece to be tested in real time, when the push broach cuts the piece to be tested, the pushing force currently received is set as a shearing force, a binding force calculating module obtains a contact area of the piece to be tested and the shearing force after the piece to be tested and the push broach are completely attached, and a target binding force is calculated according to the contact area and the thrust force. The piece to be tested and the push broach are moved to the preset positions before testing, then the object stage is moved to enable the piece to be tested to be in contact with the push broach and then a thrust test is conducted, the thrust when the push broach shears the piece to be tested is obtained, the shearing force is obtained, the contact area of the piece to be tested and the push broach is obtained, the binding force of the magnetron sputtering coating is obtained through thrust calculation according to the contact area and the shearing force, and the binding force of the magnetron sputtering coating can be detected through the thrust test.
In a third aspect, an embodiment of the present invention provides a magnetron sputtering bonding force detection apparatus, including:
at least one processor, and,
a memory communicatively coupled to the at least one processor; wherein,
the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the magnetron sputtering bonding force detection method according to the first aspect.
In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium storing computer-executable instructions for causing a computer to perform the magnetron sputtering bonding force detection method according to the first aspect.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
FIG. 1 is a schematic flow chart of a magnetron sputtering binding force detection method according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of another embodiment of the magnetron sputtering bonding force detection method according to the embodiment of the present invention;
FIG. 3 is a flowchart illustrating an embodiment of step S201 in FIG. 2;
FIG. 4 is a flowchart illustrating one embodiment of step S103 of FIG. 1;
FIG. 5 is a flowchart illustrating an embodiment of step S402 of FIG. 4;
FIG. 6 is a schematic flow chart of another embodiment of the magnetron sputtering bonding force detection method according to the embodiment of the present invention;
FIG. 7 is a flowchart illustrating one embodiment of step S106 of FIG. 1;
FIG. 8 is a block diagram of a magnetron sputtering bonding force detection apparatus according to an embodiment of the present invention;
FIG. 9 is a schematic flow chart of another embodiment of the magnetron sputtering bonding force detection method according to the embodiment of the present invention;
fig. 10 is a flowchart illustrating another embodiment of step S201 in fig. 2.
Description of reference numerals:
a test position moving module 801, an initial position moving module 802, a detection position moving module 803, a movement test module 804, a shearing force acquisition module 805, and a bonding force calculation module 806;
a substrate 901, a push broach 902, a copper column 903 to be tested and a protective film 904.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
It should be noted that although functional block divisions are provided in the system drawings and logical orders are shown in the flowcharts, in some cases, the steps shown and described may be performed in different orders than the block divisions in the systems or in the flowcharts.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
In the description of the embodiments of the present invention, if "a number" is referred to, it means one or more, if "a plurality" is referred to, it means two or more, if "greater than", "less than" or "more than" is referred to, it is understood that the number is not included, and if "greater than", "lower" or "within" is referred to, it is understood that the number is included. If reference is made to "first" or "second", this should be understood to distinguish between features and not to indicate or imply relative importance or to implicitly indicate the number of indicated features or to implicitly indicate the precedence of the indicated features.
Magnetron sputtering is a physical vapor deposition technology, and is widely applied to industrial coating due to the advantages of low temperature, high efficiency, high film forming efficiency, good film quality and the like. In recent years, the electronic industry has been developed rapidly, and electronic products have been further developed to be small in size, light in weight, easy to carry, and high in density, so that the demand for the yield of printed circuit boards has been increasing, and the performance and process requirements have been increasing, and thus, magnetron sputtering has been applied to printed circuit boards. In the RDL product manufacturing industry, the bonding force of the magnetron sputtering coating directly determines the product reliability, and the detection of the bonding force of the magnetron sputtering coating is necessary, so how to detect the bonding force of the magnetron sputtering coating is a problem to be solved urgently at present.
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a method for detecting the binding force of magnetron sputtering, which can detect the binding force of a magnetron sputtering coating film through a thrust test.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the present invention. In some embodiments, the master control device is applied to a magnetron sputtering binding force detection apparatus, the magnetron sputtering binding force detection apparatus further includes a push broach and a stage, and the master control device is in communication connection with the push broach and the stage, which specifically includes, but is not limited to, steps S101 to S106.
Step S101, controlling an objective table to move to a preset test position; wherein, the objective table is provided with a substrate, and the substrate is provided with a piece to be detected;
s102, controlling the push broach to move to a preset initial position along the Z axis so that the push broach is positioned in front of the piece to be tested; wherein the initial position is above the substrate;
step S103, controlling the push broach to move to a preset detection position along the Z axis from the initial position;
step S104, controlling the objective table to move along the direction of the push broach at a preset test speed so as to enable the piece to be tested to be in contact with the push broach;
step S105, acquiring the thrust force borne by the push broach when the push broach shears the piece to be detected so as to obtain the shearing force;
and S106, acquiring the contact area of the piece to be detected and the push broach, and calculating thrust according to the contact area and the shearing force to obtain the target binding force.
And (6) placing the substrate and the piece to be tested on the objective table by executing the steps S101 to S106, and moving the substrate and the piece to be tested to the range of the preset test position by controlling the movement of the objective table. And controlling the push broach to move along the Z axis, moving the push broach to an initial position preset above the substrate, and enabling the push broach to be positioned right in front of the piece to be detected. And controlling the push broach to move along the Z axis from the initial position, so that the push broach moves to a preset detection position and is fixed. And controlling the objective table to move along the direction of the X-axis push broach at a preset test speed, and enabling the piece to be tested to be in contact with the push broach. The method comprises the steps of acquiring the thrust of the push broach pushed by a piece to be tested in real time, and setting the thrust currently borne by the thrust as a shearing force when the push broach shears the piece to be tested. And obtaining the contact area of the piece to be detected and the push broach after the piece to be detected and the push broach are completely attached, and calculating the thrust according to the contact area and the shearing force to obtain the target binding force. The piece to be tested and the push broach are moved to preset positions before testing, then the object stage is moved to enable the piece to be tested to be in contact with the push broach and then a thrust test is conducted, the thrust when the push broach cuts the piece to be tested is obtained, the shearing force is obtained, the contact area of the piece to be tested and the push broach is obtained, the binding force of the magnetron sputtering coating is obtained through thrust calculation according to the contact area and the shearing force, and the binding force of the magnetron sputtering coating can be detected through the thrust test.
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the present invention. In some embodiments, the device under test includes a protective film and a copper pillar under test, which specifically includes, but is not limited to, step S201 before step S101.
Step S201, executing a preset magnetron sputtering coating operation on the substrate according to preset copper cylinder specification parameters so as to combine the copper cylinder to be detected with the protective film to obtain a piece to be detected.
In step S201 of some embodiments, a predetermined magnetron sputtering coating operation is performed on the substrate according to a predetermined copper pillar specification parameter, and the magnetron sputtering coating operation includes: the method comprises the steps of firstly coating a film on a substrate to enable the substrate to be coated with a protective film, then carrying out copper plating on the protective film according to preset copper column specification parameters, carrying out copper plating according to the copper column specification parameters to obtain a corresponding copper column to be detected, and combining the copper column to be detected with the protective film to obtain a piece to be detected. The protective film is plated on the substrate through magnetron sputtering coating operation, the copper column to be tested is plated on the protective film according to preset copper column specification parameters, the copper column to be tested and the protective film are combined to obtain a piece to be tested, and the corresponding testing piece can be manufactured through magnetron sputtering coating operation to be tested, so that the accuracy of magnetron sputtering binding force detection is improved.
Referring to fig. 3, fig. 3 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the invention. In some embodiments, step S201 includes, but is not limited to including, steps S301 to S304.
Step S301, spin-coating the surface of the substrate to uniformly coat gel on the surface of the substrate, and drying the gel to solidify the gel to form a gel layer;
step S302, performing magnetron sputtering coating on the gel layer to coat a protective film on the gel layer;
step S303, adhering a copper column film on the protective film according to the specification parameters of the copper column, and performing electro-coppering according to the copper column film to obtain the copper column to be detected;
step S304, the copper column film is removed, and the copper column to be tested is etched to obtain the piece to be tested.
Performing steps S301 to S304, spin-coating a layer of pi glue on the surface of the substrate by using a spin coater to uniformly coat the surface of the substrate with gel, pre-drying the gel on the surface of the substrate according to a hot plate to keep the gel on the surface of the substrate dry, curing the gel on the surface of the substrate according to an oven, and forming a gel layer on the surface of the substrate after the gel is cured. And performing magnetron sputtering coating on the gel layer to form a deposit on the gel layer, wherein the formed deposit is the protective film. Manufacturing a corresponding pattern on the protective film according to the specification parameters of the copper column, exposing the pattern after exposure and development, and then sticking a dry film to the region except the pattern to form the copper column film, so as to block the position which does not need to be electroplated, and electroplating the region where the pattern is located to form the required copper column to be tested. And removing the copper column film to obtain an isolated copper column to be tested, and etching the copper column to be tested according to a preset chemical so as to corrode an unprotected area and further finish the manufacture of the piece to be tested. A layer of protective film is plated on the PCB through magnetron sputtering coating operation, a copper column to be tested is plated on the protective film to manufacture a piece to be tested, a corresponding test piece can be manufactured through magnetron sputtering coating operation to carry out testing, and accuracy of magnetron sputtering binding force detection is improved.
The piece to be measured comprises a protective film and a copper column to be measured, and the piece to be measured is obtained by combining the copper column to be measured and the protective film.
Before step S301 is performed, the surface of the substrate is cleaned, so that the dust and other attachments on the surface of the substrate are removed, thereby improving the accuracy of detection.
In step S302 of some embodiments, the dry film is preferably 100 μm in the present application, and the dry film may be selected according to practical situations, and the dry film is not particularly limited in the present application.
In step S303 of some embodiments, the copper pillar specification parameters include a copper pillar diameter and a copper pillar height, the copper pillar diameter is preferably 500 μm in this application, the copper pillar diameter may be selected according to practical situations, and the copper pillar diameter is not specifically limited in this application. The height of the copper pillar is preferably 50 μm in the present application, and the height of the copper pillar may be selected according to practical situations, and is not specifically limited in the present application. Wherein, copper post diameter undersize or copper post height are crossed lowly, all can influence the accuracy of thrust process. For example, when the diameter of the copper column is too small, the thrust required for shearing the copper column is correspondingly too small; when the height of the copper column is too low, due to the limited capability of the equipment, if the push broach cannot reach the range of the preset detection position, the required thrust is also inaccurate.
Referring to fig. 10, fig. 10 is a schematic flow chart of another embodiment of step S201, where step S201 includes, but is not limited to, the following operation flows: cleaning a substrate → PI spin coating → PI pre-baking → PI final curing → sputter coating → film coating → exposure → development → electroplated copper → film removal → etching seed layer, etc.
In step S101 of some embodiments, the stage is controlled to move to a preset test position, so that the to-be-tested object is located in a corresponding area for detection, and the position values of the to-be-tested object and the push broach in the Y-axis direction are equal, and the to-be-tested object is fixed at a position, so that a reference can be provided for subsequently adjusting the position of the push broach, and the detection accuracy can be improved. The preset test position can be set according to specific conditions, and the preset test position is not specifically limited in the application.
In step S102 of some embodiments, the push-type broach is controlled to descend in the Z-axis direction, and after descending by a preset height, the push-type broach is located within a range of a preset initial position, so that the push-type broach is located right in front of the to-be-tested object. The push tool is moved to the position right ahead of the piece to be tested, so that the push force applied to the piece to be tested can be more balanced. The initial position may be set according to specific conditions, and the initial position is not specifically limited in this application.
Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the invention. In some embodiments, step S103 includes, but is not limited to including, steps S401 through S402.
Step S401, controlling the push broach to move downwards along the Z axis from the initial position so as to contact the substrate;
and S402, controlling the push broach to move upwards along the Z axis by a preset test height so as to enable the push broach to move to a preset detection position.
And (4) controlling the push broach to move downwards from the initial position at a preset descending speed along the direction of the Z axis until the push broach contacts the substrate by executing the steps S401 to S402, controlling the push broach to stop moving downwards after the push broach contacts the substrate, controlling the push broach to move upwards along the direction of the Z axis, and stopping after moving a preset test height, so that the push is moved to a preset detection position. The push broach is moved to contact the substrate, then the push broach is moved to the preset detection position from the substrate, and the substrate is used as a reference for moving the push broach to the preset detection position, so that the push broach can be accurately moved to the preset detection position, and the accuracy of detecting the magnetron sputtering binding force is improved.
Referring to fig. 5, fig. 5 is a schematic flow chart of a magnetron sputtering bonding force detection method according to an embodiment of the present invention. In some embodiments, step S402 includes, but is not limited to including, steps S501 through S502.
Step S501, obtaining the acting force of the substrate for blocking the push broach to continuously descend to obtain the blocking force;
step S502, if the blocking force is larger than the preset force value, the push broach is controlled to move upwards along the Z-axis direction by a preset testing height according to the preset rising speed so as to move to a preset detection position.
By executing the steps S501 to S502, after the push broach contacts the substrate, the acting force of the substrate for blocking the downward movement of the push broach is obtained through the sensor, so as to obtain the blocking force, the blocking force is compared with the preset force value, if the blocking force is greater than the preset force value, the push broach is controlled to stop moving downward, then the push broach is controlled to move upward along the Z axis at the preset rising speed, and the push broach is controlled to stop moving after moving the preset test height, so as to move the push broach to the preset detection position. Whether the push broach contacts the substrate or not is judged by judging the acting force between the substrate and the push broach, and then the push broach is moved to the preset detection position, so that the efficiency of moving the push broach to the preset detection position can be improved, and meanwhile, the accuracy of moving the push broach to the preset detection position is ensured.
In step S502 of some embodiments, the predetermined force value is a smaller value for determining whether the blocking force exists. The preset force value can be set according to specific conditions, and the preset force value is not specifically limited in the application.
The preset ascending speed is consistent with the preset descending speed, the preset ascending speed and the preset descending speed can be set according to specific conditions, and the preset ascending speed and the preset descending speed are not specifically limited in the application.
The preset test height is preferably in the range of 1/3 to 1/2 of the height of the copper pillar in the present application, and the preset test height is not particularly limited in the present application.
In step S104 of some embodiments, the stage is moved at the predetermined test speed by setting a moving force for moving the stage, and the moving force is kept applied to the stage after the push-type broach contacts the dut. The preset test speed is preferably 300 μm/s in the present application, and the preset test speed may be set according to specific situations, and is not specifically limited in the present application.
Referring to fig. 9, fig. 9 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the present invention, and in some embodiments, the execution sequence in fig. 9 is a-b-c-d-e-f. a, step: and moving the push broach 902 downwards to a preset initial position along the direction of the Z axis so that the push broach 902 is positioned right in front of the copper column 903 to be tested. b, step (b): the push-type broach 902 is further moved downward along the Z-axis until the push-type broach 902 contacts the substrate 901. c, step (c): after the push broach 902 is in contact with the substrate 901, the sensor monitors the blocking force of the substrate 901 for blocking the push broach 902 in real time, and if the blocking force reaches a threshold value, the push broach 902 is controlled to stop moving downwards. d, step: the push broach 902 is controlled to move upward by a preset test height. e, step (e): the stage is controlled to move in the direction of the push-knife 902 at a predetermined test speed so that the substrate moves in the direction of the push-knife 902 at the predetermined test speed. f, step: the push broach 902 is made to contact with the copper column 903 to be tested, the push broach 902 shears or shears the copper column 903 to be tested to be deformed, and the current shearing force is detected to be used for calculating the magnetron sputtering binding force. Wherein, the piece to be tested is obtained by combining the copper column 903 to be tested and the protective film 904.
Referring to fig. 6, fig. 6 shows a schematic flow chart of a magnetron sputtering bonding force detection method in an embodiment of the present invention. In some embodiments, prior to step S105, it specifically includes, but is not limited to including, step S601.
Step S601, if the piece to be tested is not cut off, increasing the testing speed according to a preset speed value until the piece to be tested is cut off.
In step S601 of some embodiments, the thrust force received by the push broach is detected in real time by the sensor, after the piece to be tested completely contacts the push broach, the moving force completely acts on the push broach and the piece to be tested, at this time, if the piece to be tested is not sheared or sheared to a deformation, the preset test speed is gradually increased according to the preset speed value to adjust the test speed parameter of the device, and the device adjusts the moving force according to the test speed parameter to further increase the thrust force received by the push broach until the piece to be tested is sheared or sheared to a deformation. Through thrust that increases the broach gradually and receive, can obtain a stable value when the piece that awaits measuring is cut or is sheared to warping for thrust detects more accurately, and then improves the accuracy that magnetron sputtering cohesion detected.
Referring to fig. 7, fig. 7 is a schematic flow chart illustrating a magnetron sputtering bonding force detection method according to an embodiment of the present invention. In some embodiments, step S105 includes, but is not limited to including, steps S701-S703.
S701, measuring a contact area between the piece to be measured and the push broach according to a metallographic microscope to obtain an area parameter;
step S702, area calculation is carried out according to the area parameters to obtain the contact area;
and step S703, substituting the contact area and the shearing force into a preset pressure calculation formula to calculate the thrust force, so as to obtain the target binding force.
And (4) measuring the contact area of the piece to be measured and the push broach through a metallographic microscope by executing the steps S701 to S703 to obtain a calculation parameter for calculating the contact area to obtain an area parameter, calculating the area of the contact area of the piece to be measured and the push broach according to the area parameter to obtain the contact area, substituting the contact area and the shearing force into a preset pressure calculation formula to calculate the magnetron sputtering binding force, and obtaining the target binding force. The method comprises the steps of measuring relevant parameters through a metallographic microscope to obtain area parameters, calculating the contact area according to the area parameters, calculating the target binding force according to the contact area and the shearing force, measuring the specific numerical value of the binding force of the magnetron sputtering coating, improving the accuracy of the calculated contact area and further improving the accuracy of detection of the magnetron sputtering binding force.
In step S703 of some embodiments, assuming that the bonding force is represented by F, the shear force is represented by F, and the contact area is represented by S, the predetermined pressure calculation formula includes: f = F/S.
In addition, the embodiment of the application also discloses a magnetron sputtering binding force detection device, please refer to fig. 8, and fig. 8 is a block diagram of modules of the magnetron sputtering binding force detection device disclosed in the embodiment of the invention. And, magnetron sputtering cohesion detection device includes master control equipment, push-type broach and objective table, and master control equipment and push-type broach, objective table communication connection, magnetron sputtering cohesion detection device can realize above-mentioned magnetron sputtering cohesion detection method, and magnetron sputtering cohesion detection device still includes: the testing position moving module 801, the initial position moving module 802, the detecting position moving module 803, the movement testing module 804, the shearing force obtaining module 805 and the binding force calculating module 806 are all in communication connection.
The test position moving module 801 controls the objective table to move to a preset test position; wherein, be equipped with the base plate on the objective table, be equipped with the piece that awaits measuring on the base plate. The initial position moving module 802 controls the push broach to move to a preset initial position along the Z axis so that the push broach is positioned right in front of the piece to be tested; wherein the initial position is above the substrate. The detection position moving module 803 controls the push broach to move from the initial position to a preset detection position along the Z axis. The mobile test module 804 controls the stage to move along the direction of the push broach at a preset test speed, so that the workpiece to be tested is in contact with the push broach. The shearing force obtaining module 805 obtains the thrust force applied to the push broach when the push broach shears the workpiece to be tested, so as to obtain the shearing force. The binding force calculation module 806 obtains a contact area between the workpiece to be measured and the push broach, and performs thrust calculation according to the contact area and the shearing force to obtain a target binding force.
The substrate and the piece to be tested are placed on the objective table, and the test position moving module 801 controls the objective table to move the substrate and the piece to be tested to a preset test position range. The initial position moving module 802 controls the push broach to move along the Z axis, and moves the push broach to an initial position preset above the substrate, so that the push broach is located right in front of the to-be-tested member. The detection position moving module 803 controls the push broach to move along the Z axis from the initial position, so that the push broach moves to a preset detection position and is fixed. The moving test module 804 controls the stage to move along the direction of the push-type broach at a preset test speed, and enables the piece to be tested to contact with the push-type broach. The shearing force obtaining module 805 obtains the thrust of the push broach pushed by the piece to be tested in real time, and sets the thrust currently received by the thrust as the shearing force when the push broach shears the piece to be tested. The binding force calculation module 806 obtains a contact area of the to-be-measured piece and the push broach after being completely attached, and performs thrust calculation according to the contact area and the shearing force to obtain a target binding force. The piece to be tested and the push broach are moved to preset positions before testing, then the object stage is moved to enable the piece to be tested to be in contact with the push broach and then a thrust test is conducted, the thrust when the push broach cuts the piece to be tested is obtained, the shearing force is obtained, the contact area of the piece to be tested and the push broach is obtained, the binding force of the magnetron sputtering coating is obtained through thrust calculation according to the contact area and the shearing force, and the binding force of the magnetron sputtering coating can be detected through the thrust test.
The operation process of the magnetron sputtering bonding force detection apparatus of this embodiment specifically refers to steps S101 to S106, step S201, step S301 to step S304, step S401 and step S402, step S501 and step S502, step S601 and step S701 to step S703 of the magnetron sputtering bonding force detection method in fig. 1, fig. 2, fig. 3, fig. 4, fig. 5, fig. 6 and fig. 7 described above, and is not repeated here.
Another embodiment of the present invention discloses a magnetron sputtering bonding force detection apparatus, including: at least one processor, and a memory communicatively coupled to the at least one processor; wherein the memory stores instructions executable by the at least one processor, the instructions being executable by the at least one processor to enable the at least one processor to perform the magnetron sputtering bonding force detection method as the control method steps S101 to S106 in fig. 1, the control method step S201 in fig. 2, the control method steps S301 to S304 in fig. 3, the control method steps S401 and S402 in fig. 4, the control method steps S501 and S502 in fig. 5, the control method step S601 in fig. 6, and the control method steps S701 to S703 in fig. 7.
Another embodiment of the present invention discloses a storage medium, including: the storage medium stores computer-executable instructions for causing a computer to execute the magnetron sputtering bonding force detection method of steps S101 to S106 of the control method in fig. 1, step S201 of the control method in fig. 2, steps S301 to S304 of the control method in fig. 3, steps S401 and S402 of the control method in fig. 4, steps S501 and S502 of the control method in fig. 5, step S601 of the control method in fig. 6, and steps S701 to S703 of the control method in fig. 7.
The above described embodiments of the apparatus are merely illustrative, wherein the units illustrated as separate components may or may not be physically separate, may be located in one place, or may be distributed over a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.
It will be understood by those of ordinary skill in the art that all or some of the steps, systems, and methods disclosed above may be implemented as software, firmware, hardware, or suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as is well known to those skilled in the art.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
1. The magnetron sputtering binding force detection method is characterized by being applied to a main control device of a magnetron sputtering binding force detection device, wherein the magnetron sputtering binding force detection device further comprises a push broach and an objective table, the main control device is in communication connection with the push broach and the objective table, and the detection method comprises the following steps:
controlling the objective table to move to a preset test position; the object stage is provided with a substrate, and the substrate is provided with a piece to be detected;
controlling the push broach to move to a preset initial position along the Z axis so that the push broach is positioned right in front of the piece to be detected; wherein the initial position is above the substrate;
controlling the push broach to move from the initial position to a preset detection position along the Z axis;
controlling the objective table to move along the direction of the push broach at a preset test speed so as to enable the piece to be tested to be in contact with the push broach;
acquiring the thrust force borne by the push broach when the push broach shears the piece to be tested so as to obtain the shearing force;
and acquiring the contact area between the piece to be detected and the push broach, and calculating thrust according to the contact area and the shearing force to obtain the target binding force.
2. The magnetron sputtering bonding force detection method according to claim 1, wherein the piece to be tested comprises a protective film and a copper column to be tested, and before the stage is controlled to move to a preset test position, the method comprises the following steps:
and executing a preset magnetron sputtering coating operation on the substrate according to preset copper cylinder specification parameters so as to combine the copper cylinder to be detected and the protective film to obtain the piece to be detected.
3. The method for detecting the magnetron sputtering bonding force according to claim 2, wherein the step of performing a preset magnetron sputtering coating operation on the substrate according to preset copper cylinder specification parameters to bond the copper cylinder to be detected and the protective film to obtain the piece to be detected comprises the steps of:
spin coating the surface of the substrate to uniformly coat gel on the surface of the substrate, and drying the gel to solidify the gel to form a gel layer;
performing magnetron sputtering coating on the gel layer to coat the protective film on the gel layer;
adhering a copper cylinder film on the protective film according to the specification parameters of the copper cylinder so as to carry out electro-coppering according to the copper cylinder film to obtain the copper cylinder to be detected;
and removing the copper cylinder film, and etching the copper cylinder to be detected to obtain the piece to be detected.
4. The magnetron sputtering bonding force detection method according to claim 1, wherein the controlling the push broach to move from the initial position to a preset detection position along the Z axis comprises:
controlling the push broach to move downwards along the Z axis from the initial position so as to contact the substrate;
and controlling the push broach to move upwards along the Z-axis direction by the preset test height so as to enable the push broach to move to the preset detection position.
5. The method for detecting magnetron sputtering bonding force according to claim 4, wherein the controlling the push broach to move upward along the Z axis by the preset test height so as to move the push broach to the preset detection position comprises:
obtaining the acting force of the substrate for blocking the push broach to continuously descend to obtain the blocking force;
and if the blocking force is larger than a preset force value, controlling the push broach to move upwards along the Z-axis direction by the preset test height according to a preset rising speed so as to enable the push broach to move to the preset detection position.
6. The magnetron sputtering bonding force detection method according to claim 1, wherein before the obtaining of the thrust force applied to the push broach when the push broach shears the piece to be tested so as to obtain the shearing force, the method comprises:
and if the piece to be tested is not cut off, increasing the testing speed according to a preset speed value until the piece to be tested is cut off.
7. The magnetron sputtering bonding force detection method according to any one of claims 1 to 6, wherein the obtaining of the contact area between the piece to be detected and the push broach and the calculation of the thrust force according to the contact area and the shearing force to obtain the target bonding force comprises:
measuring a contact area between the piece to be measured and the push broach according to a metallographic microscope to obtain an area parameter;
calculating the area according to the area parameter to obtain the contact area;
and substituting the contact area and the shearing force into a preset pressure calculation formula to calculate the thrust force to obtain the target binding force.
8. The utility model provides a magnetron sputtering cohesion detection device, its characterized in that, includes master control equipment, push broach and objective table, master control equipment with the push broach objective table communication connection, magnetron sputtering cohesion detection device still includes:
the test position moving module is used for controlling the objective table to move to a preset test position; the object stage is provided with a substrate, and the substrate is provided with a piece to be detected;
the initial position moving module is used for controlling the push broach to move to a preset initial position along the Z axis so as to enable the push broach to be positioned right in front of the piece to be tested; wherein the initial position is above the substrate;
the detection position moving module is used for controlling the push broach to move from the initial position to a preset detection position along the Z axis;
the moving test module is used for controlling the objective table to move along the direction of the push broach along the X axis at a preset test speed so as to enable the piece to be tested to be in contact with the push broach;
the shearing force acquisition module is used for acquiring the thrust force borne by the push broach when the push broach shears the piece to be tested so as to obtain the shearing force;
and the binding force calculation module is used for acquiring the contact area between the piece to be detected and the push broach, and performing thrust calculation according to the contact area and the shearing force to obtain the target binding force.
9. The utility model provides a magnetron sputtering cohesion check out test set which characterized in that includes:
at least one processor, and,
a memory communicatively coupled to the at least one processor; wherein,
the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the magnetron sputtering bonding force detection method of any one of claims 1 to 7.
10. A computer-readable storage medium storing computer-executable instructions for causing a computer to perform the magnetron sputtering bonding force detection method according to any one of claims 1 to 7.
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| CN202211178502.4A CN115452710A (en) | 2022-09-26 | 2022-09-26 | Magnetron sputtering binding force detection method, device, equipment and storage medium |
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| CN202211178502.4A CN115452710A (en) | 2022-09-26 | 2022-09-26 | Magnetron sputtering binding force detection method, device, equipment and storage medium |
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